JP5490362B2 - Euv光源ターゲット材料を処理する方法及び装置 - Google Patents
Euv光源ターゲット材料を処理する方法及び装置 Download PDFInfo
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
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- NNIPDXPTJYIMKW-UHFFFAOYSA-N iron tin Chemical compound [Fe].[Sn] NNIPDXPTJYIMKW-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/006—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state details of the ejection system, e.g. constructional details of the nozzle
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本出願は、代理人整理番号第2004−0008−01号である、2005年2月25日出願の名称「EUV光源ターゲット供給の方法及び装置」の米国特許出願第11/067,124号の一部継続出願であり、その各々の開示内容は引用により本明細書に組み込まれる。
94 ターゲット液滴
110 液体金属処理システム
130 レベル検出器
132 レベルセンサー
140 固体材料
142 溶融金属
144 プラズマ源材料
210 フィルタ
212 下部容器
214 上部容器
Claims (9)
- EUV光源プラズマ源材料処理システムであって、
液滴形成毛細管と流体連通する液滴発生器プラズマ源材料リザーバを有する液滴発生器と、
前記プラズマ源材料リザーバと熱的に連通し、前記プラズマ源材料リザーバ内のプラズマ源材料の少なくともいくらかが液体の形態である温度範囲に維持するよう構成されたヒータと、
前記液滴発生器プラズマ源材料リザーバと流体連通し、前記液滴発生器プラズマ源材料リザーバに移送するために液体形態でプラズマ源材料の少なくとも補充量を保持する供給リザーバを有するプラズマ源材料供給システムと、
液体プラズマ源材料を前記供給リザーバから前記液滴発生器プラズマ源材料リザーバに移送する移送機構と、
を備え、
前記移送機構が、前記供給リザーバを前記液滴発生器プラズマ源材料リザーバから隔離する弁を更に含むことを特徴とするシステム。 - 前記供給リザーバが、固体形態の前記材料の一部から液体形態の前記材料を定期的に形成するのに使用される固体形態の前記プラズマ源材料を更に含むことを特徴とする請求項1に記載のシステム。
- 前記移送機構が、前記供給リザーバと前記液滴発生器プラズマ源材料リザーバとの間の熱起動式弁を更に含むことを特徴とする請求項1に記載のシステム。
- 近傍で固体形態の前記プラズマ源材料に熱を印加するように動作可能であって、前記供給リザーバの溶融材料収集領域の上方に配置された変位ヒータ機構を更に備えることを特徴とする請求項1に記載のシステム。
- EUV光源プラズマ源材料処理システムであって、
液滴形成毛細管と流体連通する液滴発生器プラズマ源材料リザーバを有する液滴発生器と、
前記プラズマ源材料リザーバと熱的に連通し、前記プラズマ源材料リザーバ内のプラズマ源材料の少なくともいくらかが液体形態である温度範囲に維持するよう構成されたヒータと、
前記液滴発生器プラズマ源材料リザーバと流体連通し、前記液滴発生器プラズマ源材料リザーバに移送するために液体形態でプラズマ源材料の少なくとも補充量を保持する供給リザーバを有するプラズマ源材料供給システムと、
液体プラズマ源材料を前記供給リザーバから前記液滴発生器プラズマ源材料リザーバに移送する移送機構と、
移送中に前記液滴発生器プラズマ源材料リザーバ内の液滴発生器プラズマ源材料の上面より下に位置決めされる前記移送機構の排出端部と、
を備え、
前記移送機構が、前記供給リザーバを前記液滴発生器プラズマ源材料リザーバから隔離する弁を更に含むことを特徴とするシステム。 - 液滴発生器プラズマ源材料リザーバを有する液滴発生器と、前記プラズマ源材料を液体の形態である温度範囲に維持された液滴形成毛細管と、供給リザーバを有するプラズマ源材料供給システムと、液体プラズマ源材料を前記供給リザーバから前記液滴発生器プラズマ源材料リザーバに移送する移送機構とを備えたプラズマ源材料処理システムにおいてEUV光源プラズマ源材料を供給する方法において、
液体金属とプラズマ源材料処理システム構成要素との化学的相互作用による初期汚染を軽減するために前記プラズマ源材料処理システムの初期洗浄を行う段階を含むことを特徴とする方法。 - 液滴発生器プラズマ源材料リザーバを有する液滴発生器と、前記プラズマ源材料が液体の形態である温度範囲に維持される液滴形成毛細管と、供給リザーバを有するプラズマ源材料供給システムとを備えたプラズマ源材料処理システムにおいてEUV光源プラズマ源材料を供給する方法であって、
前記プラズマ源材料リザーバ内の汚染物質が前記液滴発生器プラズマ源材料リザーバに到達するのを防止するよう構成されたインラインフィルタを含む移送機構を利用して、液体プラズマ源材料を前記供給リザーバから前記液滴発生器プラズマ源材料リザーバへ移送する段階を含むことを特徴とする方法。 - 液滴発生器プラズマ源材料リザーバを有する液滴発生器と、前記プラズマ源材料が液体の形態である温度範囲に維持された液滴形成毛細管と、供給リザーバを有するプラズマ源材料供給システムと、液体プラズマ源材料を前記供給リザーバから前記液滴発生器プラズマ源材料リザーバに移送する移送機構とを備えたプラズマ源材料処理システムにおいてEUV光源プラズマ源材料を供給する方法であって、
前記材料処理システムの少なくとも1つの選択部分の温度を、当該少なくとも1つの選択部分内部の熱勾配が2℃を超えないよう維持する段階を含むことを特徴とする方法。 - EUV光源プラズマ源材料処理システムであって、
液滴形成毛細管と流体連通し且つ前記プラズマ源材料が液体形態である温度範囲に維持される液滴発生器プラズマ源材料リザーバを有する液滴発生器と、
前記液滴発生器プラズマ源材料リザーバと流体連通し、前記液滴発生器プラズマ源材料リザーバに移送するために液体形態でプラズマ源材料の少なくとも補充量を保持する供給リザーバを有するプラズマ源材料供給システムと、
前記供給リザーバの溶融部分内に前記プラズマ源材料を補充するための固体形態のプラズマ源材料を前記プラズマ源材料供給システム内に貯蔵する貯蔵機構と、
を備えることを特徴とするシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/067,124 | 2005-02-25 | ||
US11/067,124 US7405416B2 (en) | 2005-02-25 | 2005-02-25 | Method and apparatus for EUV plasma source target delivery |
US11/088,475 | 2005-03-23 | ||
US11/088,475 US7122816B2 (en) | 2005-02-25 | 2005-03-23 | Method and apparatus for EUV light source target material handling |
PCT/US2006/005541 WO2006093687A1 (en) | 2005-02-25 | 2006-02-17 | Method and apparatus for euv light source target material handling |
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JP2008532228A JP2008532228A (ja) | 2008-08-14 |
JP2008532228A5 JP2008532228A5 (ja) | 2009-03-26 |
JP5490362B2 true JP5490362B2 (ja) | 2014-05-14 |
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JP2007557068A Expired - Fee Related JP5455308B2 (ja) | 2005-02-25 | 2006-02-17 | Euvプラズマ源ターゲット供給方法及び装置 |
JP2007557062A Active JP5490362B2 (ja) | 2005-02-25 | 2006-02-17 | Euv光源ターゲット材料を処理する方法及び装置 |
JP2012039168A Active JP5643779B2 (ja) | 2005-02-25 | 2012-02-24 | Euvプラズマ源ターゲット供給システム |
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US (3) | US7405416B2 (ja) |
EP (1) | EP1867218B1 (ja) |
JP (3) | JP5455308B2 (ja) |
KR (1) | KR101235023B1 (ja) |
WO (1) | WO2006093693A2 (ja) |
Families Citing this family (168)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7856044B2 (en) * | 1999-05-10 | 2010-12-21 | Cymer, Inc. | Extendable electrode for gas discharge laser |
US7916388B2 (en) * | 2007-12-20 | 2011-03-29 | Cymer, Inc. | Drive laser for EUV light source |
US7372056B2 (en) * | 2005-06-29 | 2008-05-13 | Cymer, Inc. | LPP EUV plasma source material target delivery system |
US7897947B2 (en) * | 2007-07-13 | 2011-03-01 | Cymer, Inc. | Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave |
US7928416B2 (en) | 2006-12-22 | 2011-04-19 | Cymer, Inc. | Laser produced plasma EUV light source |
US7378673B2 (en) * | 2005-02-25 | 2008-05-27 | Cymer, Inc. | Source material dispenser for EUV light source |
US8653437B2 (en) | 2010-10-04 | 2014-02-18 | Cymer, Llc | EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods |
US7671349B2 (en) | 2003-04-08 | 2010-03-02 | Cymer, Inc. | Laser produced plasma EUV light source |
US8654438B2 (en) | 2010-06-24 | 2014-02-18 | Cymer, Llc | Master oscillator-power amplifier drive laser with pre-pulse for EUV light source |
CN101002305A (zh) * | 2005-01-12 | 2007-07-18 | 株式会社尼康 | 激光等离子euv光源、靶材构件、胶带构件、靶材构件的制造方法、靶材的提供方法以及euv曝光装置 |
JP4564369B2 (ja) * | 2005-02-04 | 2010-10-20 | 株式会社小松製作所 | 極端紫外光源装置 |
US7718985B1 (en) * | 2005-11-01 | 2010-05-18 | University Of Central Florida Research Foundation, Inc. | Advanced droplet and plasma targeting system |
JP4807560B2 (ja) * | 2005-11-04 | 2011-11-02 | 国立大学法人 宮崎大学 | 極端紫外光発生方法および極端紫外光発生装置 |
EP1803567A1 (en) * | 2005-12-27 | 2007-07-04 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Material jet system |
JP5156192B2 (ja) * | 2006-01-24 | 2013-03-06 | ギガフォトン株式会社 | 極端紫外光源装置 |
US8158960B2 (en) | 2007-07-13 | 2012-04-17 | Cymer, Inc. | Laser produced plasma EUV light source |
US8513629B2 (en) * | 2011-05-13 | 2013-08-20 | Cymer, Llc | Droplet generator with actuator induced nozzle cleaning |
US8829477B2 (en) * | 2010-03-10 | 2014-09-09 | Asml Netherlands B.V. | Droplet generator with actuator induced nozzle cleaning |
JP4885587B2 (ja) * | 2006-03-28 | 2012-02-29 | 株式会社小松製作所 | ターゲット供給装置 |
US20080035667A1 (en) * | 2006-06-07 | 2008-02-14 | Osg Norwich Pharmaceuticals, Inc. | Liquid delivery system |
JP5162113B2 (ja) * | 2006-08-07 | 2013-03-13 | ギガフォトン株式会社 | 極端紫外光源装置 |
US7696492B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
JP2008193014A (ja) * | 2007-02-08 | 2008-08-21 | Komatsu Ltd | Lpp型euv光源装置用ターゲット物質供給装置及びシステム |
JP5149520B2 (ja) * | 2007-03-08 | 2013-02-20 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP5426815B2 (ja) * | 2007-03-15 | 2014-02-26 | 株式会社ユメックス | 液滴生成装置および液滴生成方法 |
EP2180177B1 (en) * | 2007-07-12 | 2018-03-28 | Imagineering, Inc. | Compressed ignition internal combustion engine, glow plug, and injector |
US8227771B2 (en) * | 2007-07-23 | 2012-07-24 | Asml Netherlands B.V. | Debris prevention system and lithographic apparatus |
JP5234448B2 (ja) * | 2007-08-09 | 2013-07-10 | 国立大学法人東京工業大学 | 放射線源用ターゲット、その製造方法及び放射線発生装置 |
US7655925B2 (en) * | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
US7812329B2 (en) * | 2007-12-14 | 2010-10-12 | Cymer, Inc. | System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus |
US20090095924A1 (en) * | 2007-10-12 | 2009-04-16 | International Business Machines Corporation | Electrode design for euv discharge plasma source |
JP5280066B2 (ja) * | 2008-02-28 | 2013-09-04 | ギガフォトン株式会社 | 極端紫外光源装置 |
US7872245B2 (en) * | 2008-03-17 | 2011-01-18 | Cymer, Inc. | Systems and methods for target material delivery in a laser produced plasma EUV light source |
US20090250637A1 (en) * | 2008-04-02 | 2009-10-08 | Cymer, Inc. | System and methods for filtering out-of-band radiation in EUV exposure tools |
US8519367B2 (en) * | 2008-07-07 | 2013-08-27 | Koninklijke Philips N.V. | Extreme UV radiation generating device comprising a corrosion-resistant material |
US8891058B2 (en) * | 2008-07-18 | 2014-11-18 | Koninklijke Philips N.V. | Extreme UV radiation generating device comprising a contamination captor |
US8198612B2 (en) * | 2008-07-31 | 2012-06-12 | Cymer, Inc. | Systems and methods for heating an EUV collector mirror |
JP2010062141A (ja) * | 2008-08-04 | 2010-03-18 | Komatsu Ltd | 極端紫外光源装置 |
US8519366B2 (en) * | 2008-08-06 | 2013-08-27 | Cymer, Inc. | Debris protection system having a magnetic field for an EUV light source |
US7641349B1 (en) | 2008-09-22 | 2010-01-05 | Cymer, Inc. | Systems and methods for collector mirror temperature control using direct contact heat transfer |
JP5362515B2 (ja) * | 2008-10-17 | 2013-12-11 | ギガフォトン株式会社 | 極端紫外光源装置のターゲット供給装置及びその製造方法 |
JP5486795B2 (ja) * | 2008-11-20 | 2014-05-07 | ギガフォトン株式会社 | 極端紫外光源装置及びそのターゲット供給システム |
US8283643B2 (en) * | 2008-11-24 | 2012-10-09 | Cymer, Inc. | Systems and methods for drive laser beam delivery in an EUV light source |
JP5486797B2 (ja) * | 2008-12-22 | 2014-05-07 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP5739099B2 (ja) | 2008-12-24 | 2015-06-24 | ギガフォトン株式会社 | ターゲット供給装置、その制御システム、その制御装置およびその制御回路 |
JP5455661B2 (ja) * | 2009-01-29 | 2014-03-26 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP5670619B2 (ja) * | 2009-02-06 | 2015-02-18 | ギガフォトン株式会社 | 極端紫外光源装置 |
US8969838B2 (en) * | 2009-04-09 | 2015-03-03 | Asml Netherlands B.V. | Systems and methods for protecting an EUV light source chamber from high pressure source material leaks |
US8304752B2 (en) * | 2009-04-10 | 2012-11-06 | Cymer, Inc. | EUV light producing system and method utilizing an alignment laser |
DE102009020776B4 (de) | 2009-05-08 | 2011-07-28 | XTREME technologies GmbH, 37077 | Anordnung zur kontinuierlichen Erzeugung von flüssigem Zinn als Emittermaterial in EUV-Strahlungsquellen |
JPWO2010137625A1 (ja) * | 2009-05-27 | 2012-11-15 | ギガフォトン株式会社 | ターゲット出力装置及び極端紫外光源装置 |
JP5612579B2 (ja) * | 2009-07-29 | 2014-10-22 | ギガフォトン株式会社 | 極端紫外光源装置、極端紫外光源装置の制御方法、およびそのプログラムを記録した記録媒体 |
US9113540B2 (en) | 2010-02-19 | 2015-08-18 | Gigaphoton Inc. | System and method for generating extreme ultraviolet light |
US9265136B2 (en) | 2010-02-19 | 2016-02-16 | Gigaphoton Inc. | System and method for generating extreme ultraviolet light |
JP5687488B2 (ja) | 2010-02-22 | 2015-03-18 | ギガフォトン株式会社 | 極端紫外光生成装置 |
JP5702164B2 (ja) | 2010-03-18 | 2015-04-15 | ギガフォトン株式会社 | 極端紫外光源装置、極端紫外光源装置の制御方法及びターゲット供給装置 |
US8263953B2 (en) * | 2010-04-09 | 2012-09-11 | Cymer, Inc. | Systems and methods for target material delivery protection in a laser produced plasma EUV light source |
US9066412B2 (en) | 2010-04-15 | 2015-06-23 | Asml Netherlands B.V. | Systems and methods for cooling an optic |
JP5726587B2 (ja) * | 2010-10-06 | 2015-06-03 | ギガフォトン株式会社 | チャンバ装置 |
US8462425B2 (en) | 2010-10-18 | 2013-06-11 | Cymer, Inc. | Oscillator-amplifier drive laser with seed protection for an EUV light source |
JP2012103553A (ja) * | 2010-11-11 | 2012-05-31 | Nippon Sheet Glass Co Ltd | 正立等倍レンズアレイプレート、光走査ユニットおよび画像読取装置 |
US8810902B2 (en) | 2010-12-29 | 2014-08-19 | Asml Netherlands B.V. | Multi-pass optical apparatus |
WO2012102070A1 (ja) * | 2011-01-28 | 2012-08-02 | イマジニアリング株式会社 | 内燃機関の制御装置 |
JP5816440B2 (ja) * | 2011-02-23 | 2015-11-18 | ギガフォトン株式会社 | 光学装置、レーザ装置および極端紫外光生成装置 |
JP5921876B2 (ja) * | 2011-02-24 | 2016-05-24 | ギガフォトン株式会社 | 極端紫外光生成装置 |
US8633459B2 (en) | 2011-03-02 | 2014-01-21 | Cymer, Llc | Systems and methods for optics cleaning in an EUV light source |
US8604452B2 (en) | 2011-03-17 | 2013-12-10 | Cymer, Llc | Drive laser delivery systems for EUV light source |
JP5662214B2 (ja) | 2011-03-18 | 2015-01-28 | ギガフォトン株式会社 | ターゲット供給装置 |
JP5921879B2 (ja) * | 2011-03-23 | 2016-05-24 | ギガフォトン株式会社 | ターゲット供給装置及び極端紫外光生成装置 |
US9029813B2 (en) | 2011-05-20 | 2015-05-12 | Asml Netherlands B.V. | Filter for material supply apparatus of an extreme ultraviolet light source |
US9516730B2 (en) | 2011-06-08 | 2016-12-06 | Asml Netherlands B.V. | Systems and methods for buffer gas flow stabilization in a laser produced plasma light source |
KR20140052012A (ko) | 2011-08-05 | 2014-05-02 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치에 대한 방법 및 방사선 소스 및 디바이스 제조 방법 |
KR101938707B1 (ko) * | 2011-09-02 | 2019-01-15 | 에이에스엠엘 네델란즈 비.브이. | 디바이스 제조용 리소그래피 장치에 대한 방법 및 방사선 소스 |
KR101958850B1 (ko) | 2011-09-02 | 2019-03-15 | 에이에스엠엘 네델란즈 비.브이. | 방사선 소스 |
WO2013029902A1 (en) * | 2011-09-02 | 2013-03-07 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
JP6081711B2 (ja) * | 2011-09-23 | 2017-02-15 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源 |
NL2009358A (en) | 2011-09-23 | 2013-03-26 | Asml Netherlands Bv | Radiation source. |
JP5881353B2 (ja) * | 2011-09-27 | 2016-03-09 | ギガフォトン株式会社 | ターゲット供給装置、極端紫外光生成装置 |
JP6270310B2 (ja) | 2011-12-12 | 2018-01-31 | ギガフォトン株式会社 | 冷却水温度制御装置 |
US8816305B2 (en) * | 2011-12-20 | 2014-08-26 | Asml Netherlands B.V. | Filter for material supply apparatus |
JP6134130B2 (ja) | 2012-01-23 | 2017-05-24 | ギガフォトン株式会社 | ターゲット生成条件判定装置及びターゲット生成システム |
JP6077822B2 (ja) * | 2012-02-10 | 2017-02-08 | ギガフォトン株式会社 | ターゲット供給装置、および、ターゲット供給方法 |
JP5946649B2 (ja) | 2012-02-14 | 2016-07-06 | ギガフォトン株式会社 | ターゲット供給装置 |
JP2013201118A (ja) | 2012-02-23 | 2013-10-03 | Gigaphoton Inc | ターゲット物質精製装置、および、ターゲット供給装置 |
JP2013175402A (ja) * | 2012-02-27 | 2013-09-05 | Gigaphoton Inc | 極端紫外光生成装置及びターゲット物質供給方法 |
KR102106026B1 (ko) * | 2012-03-07 | 2020-05-04 | 에이에스엠엘 네델란즈 비.브이. | 방사선 소스 및 리소그래피 장치 |
JP5984132B2 (ja) | 2012-03-13 | 2016-09-06 | ギガフォトン株式会社 | ターゲット供給装置 |
JP6154459B2 (ja) * | 2012-03-27 | 2017-06-28 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置用の燃料システム、euv源、リソグラフィ装置及び燃料フィルタリング方法 |
JP6034598B2 (ja) | 2012-05-31 | 2016-11-30 | ギガフォトン株式会社 | Euv光生成装置の洗浄方法 |
JP6099241B2 (ja) * | 2012-06-28 | 2017-03-22 | ギガフォトン株式会社 | ターゲット供給装置 |
JP2014032778A (ja) | 2012-08-01 | 2014-02-20 | Gigaphoton Inc | ターゲット供給装置、および、ターゲット供給方法 |
JP6068044B2 (ja) | 2012-08-09 | 2017-01-25 | ギガフォトン株式会社 | ターゲット供給装置の制御方法、および、ターゲット供給装置 |
JP6101451B2 (ja) | 2012-08-30 | 2017-03-22 | ギガフォトン株式会社 | ターゲット供給装置及び極端紫外光生成装置 |
WO2014042003A1 (ja) | 2012-09-11 | 2014-03-20 | ギガフォトン株式会社 | 極端紫外光生成方法及び極端紫外光生成装置 |
JP6058324B2 (ja) | 2012-09-11 | 2017-01-11 | ギガフォトン株式会社 | ターゲット供給装置の制御方法、および、ターゲット供給装置 |
KR20140036538A (ko) * | 2012-09-17 | 2014-03-26 | 삼성전자주식회사 | 극자외선 생성 장치, 이를 포함하는 노광 장치 및 이러한 노광 장치를 사용해서 제조된 전자 디바이스 |
US9392678B2 (en) | 2012-10-16 | 2016-07-12 | Asml Netherlands B.V. | Target material supply apparatus for an extreme ultraviolet light source |
JP2014102980A (ja) * | 2012-11-20 | 2014-06-05 | Gigaphoton Inc | ターゲット供給装置 |
JP6103894B2 (ja) * | 2012-11-20 | 2017-03-29 | ギガフォトン株式会社 | ターゲット供給装置 |
US9715174B2 (en) | 2012-11-30 | 2017-07-25 | Asml Netherlands B.V. | Droplet generator, EUV radiation source, lithographic apparatus, method for generating droplets and device manufacturing method |
US9277634B2 (en) * | 2013-01-17 | 2016-03-01 | Kla-Tencor Corporation | Apparatus and method for multiplexed multiple discharge plasma produced sources |
JP2014143150A (ja) | 2013-01-25 | 2014-08-07 | Gigaphoton Inc | ターゲット供給装置およびeuv光生成チャンバ |
JP6151525B2 (ja) | 2013-02-05 | 2017-06-21 | ギガフォトン株式会社 | ガスロック装置及び極端紫外光生成装置 |
JP6151926B2 (ja) | 2013-02-07 | 2017-06-21 | ギガフォトン株式会社 | ターゲット供給装置 |
JP6166551B2 (ja) * | 2013-02-25 | 2017-07-19 | ギガフォトン株式会社 | ターゲット供給装置及び極端紫外光生成装置 |
JP6168797B2 (ja) | 2013-03-08 | 2017-07-26 | ギガフォトン株式会社 | 極端紫外光生成装置 |
US9699876B2 (en) * | 2013-03-14 | 2017-07-04 | Asml Netherlands, B.V. | Method of and apparatus for supply and recovery of target material |
KR102115543B1 (ko) * | 2013-04-26 | 2020-05-26 | 삼성전자주식회사 | 극자외선 광원 장치 |
JP5662515B2 (ja) * | 2013-05-13 | 2015-01-28 | ギガフォトン株式会社 | 極端紫外光源装置及びそのターゲット供給システム |
WO2014189055A1 (ja) * | 2013-05-21 | 2014-11-27 | ギガフォトン株式会社 | 極端紫外光生成装置 |
US10143074B2 (en) | 2013-08-01 | 2018-11-27 | Gigaphoton Inc. | Filter and target supply apparatus |
JP6395832B2 (ja) * | 2013-08-02 | 2018-09-26 | エーエスエムエル ネザーランズ ビー.ブイ. | 放射源用コンポーネント、関連した放射源およびリソグラフィ装置 |
JP6275731B2 (ja) | 2013-09-17 | 2018-02-07 | ギガフォトン株式会社 | ターゲット供給装置およびeuv光生成装置 |
JP6283684B2 (ja) * | 2013-11-07 | 2018-02-21 | ギガフォトン株式会社 | 極端紫外光生成装置及び極端紫外光生成装置の制御方法 |
US9301382B2 (en) | 2013-12-02 | 2016-03-29 | Asml Netherlands B.V. | Apparatus for and method of source material delivery in a laser produced plasma EUV light source |
WO2015087454A1 (ja) | 2013-12-13 | 2015-06-18 | ギガフォトン株式会社 | ターゲット供給装置 |
US9271381B2 (en) | 2014-02-10 | 2016-02-23 | Asml Netherlands B.V. | Methods and apparatus for laser produced plasma EUV light source |
JPWO2016001973A1 (ja) * | 2014-06-30 | 2017-04-27 | ギガフォトン株式会社 | ターゲット供給装置、ターゲット物質の精製方法、ターゲット物質の精製プログラム、ターゲット物質の精製プログラムを記録した記録媒体、および、ターゲット生成器 |
US9301381B1 (en) | 2014-09-12 | 2016-03-29 | International Business Machines Corporation | Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas |
JP6421196B2 (ja) * | 2014-11-05 | 2018-11-07 | ギガフォトン株式会社 | ターゲット生成装置およびフィルタ構造体の製造方法 |
US9544983B2 (en) * | 2014-11-05 | 2017-01-10 | Asml Netherlands B.V. | Apparatus for and method of supplying target material |
KR102336300B1 (ko) * | 2014-11-17 | 2021-12-07 | 삼성전자주식회사 | 극자외선 광원 장치 및 극자외선 광 발생 방법 |
WO2016084167A1 (ja) | 2014-11-26 | 2016-06-02 | ギガフォトン株式会社 | 加振ユニット、ターゲット供給装置および極端紫外光生成システム |
JP5964400B2 (ja) * | 2014-12-04 | 2016-08-03 | ギガフォトン株式会社 | 極端紫外光源装置及びそのターゲット供給システム |
JPWO2016103456A1 (ja) | 2014-12-26 | 2017-10-05 | ギガフォトン株式会社 | 極端紫外光生成装置 |
JP6513106B2 (ja) | 2015-01-28 | 2019-05-15 | ギガフォトン株式会社 | ターゲット供給装置 |
US10217625B2 (en) * | 2015-03-11 | 2019-02-26 | Kla-Tencor Corporation | Continuous-wave laser-sustained plasma illumination source |
WO2016182600A1 (en) * | 2015-05-09 | 2016-11-17 | Brilliant Light Power, Inc. | Ultraviolet electrical power generation systems and methods regarding same |
KR102366807B1 (ko) * | 2015-08-11 | 2022-02-23 | 삼성전자주식회사 | 자기장을 이용하여 드롭릿 포지션을 컨트롤할 수 있는 드롭릿 발생부를 가진 euv 광 발생 장치 |
JP6637155B2 (ja) * | 2016-02-26 | 2020-01-29 | ギガフォトン株式会社 | 極端紫外光生成装置 |
US10455680B2 (en) * | 2016-02-29 | 2019-10-22 | Asml Netherlands B.V. | Method and apparatus for purifying target material for EUV light source |
JP6237825B2 (ja) * | 2016-05-27 | 2017-11-29 | ウシオ電機株式会社 | 高温プラズマ原料供給装置および極端紫外光光源装置 |
WO2018042627A1 (ja) * | 2016-09-02 | 2018-03-08 | ギガフォトン株式会社 | ターゲット生成装置及び極端紫外光生成装置 |
JP6266817B2 (ja) * | 2017-02-20 | 2018-01-24 | ギガフォトン株式会社 | ターゲット供給装置 |
US10585215B2 (en) | 2017-06-29 | 2020-03-10 | Cymer, Llc | Reducing optical damage on an optical element |
US10495974B2 (en) * | 2017-09-14 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Target feeding system |
US10437162B2 (en) * | 2017-09-21 | 2019-10-08 | Asml Netherlands B.V. | Methods and apparatuses for protecting a seal in a pressure vessel of a photolithography system |
US10331035B2 (en) * | 2017-11-08 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Light source for lithography exposure process |
WO2019092831A1 (ja) * | 2017-11-09 | 2019-05-16 | ギガフォトン株式会社 | 極端紫外光生成装置及び電子デバイスの製造方法 |
JP6513237B2 (ja) * | 2018-01-10 | 2019-05-15 | ギガフォトン株式会社 | ターゲット供給装置 |
TWI821231B (zh) | 2018-01-12 | 2023-11-11 | 荷蘭商Asml荷蘭公司 | 用於控制在液滴串流中液滴聚結之裝置與方法 |
WO2019185370A1 (en) | 2018-03-28 | 2019-10-03 | Asml Netherlands B.V. | Apparatus for and method of monitoring and controlling droplet generator performance |
CN112703344B (zh) | 2018-09-18 | 2023-07-28 | Asml荷兰有限公司 | 用于高压连接的装置 |
NL2023879A (en) | 2018-09-26 | 2020-05-01 | Asml Netherlands Bv | Apparatus for and method of controlling introduction of euv target material into an euv chamber |
US11134558B2 (en) * | 2018-09-28 | 2021-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Droplet generator assembly and method for using the same and radiation source apparatus |
US10880980B2 (en) | 2018-09-28 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV light source and apparatus for EUV lithography |
NL2024077A (en) * | 2018-10-25 | 2020-05-13 | Asml Netherlands Bv | Target material supply apparatus and method |
JP6676127B2 (ja) * | 2018-10-26 | 2020-04-08 | ギガフォトン株式会社 | ターゲット供給装置、極端紫外光生成装置及び電子デバイスの製造方法 |
TWI826559B (zh) | 2018-10-29 | 2023-12-21 | 荷蘭商Asml荷蘭公司 | 延長靶材輸送系統壽命之裝置及方法 |
EP3873370A1 (en) * | 2018-11-02 | 2021-09-08 | Bionaut Labs Ltd. | Propelling devices for propelling through a medium, using external magnetic stimuli applied thereon |
NL2024324A (en) | 2018-12-31 | 2020-07-10 | Asml Netherlands Bv | Apparatus for controlling introduction of euv target material into an euv chamber |
JP7504114B2 (ja) | 2019-03-15 | 2024-06-21 | エーエスエムエル ネザーランズ ビー.ブイ. | Euv光源におけるターゲット材料制御 |
US11032897B2 (en) * | 2019-08-22 | 2021-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Refill and replacement method for droplet generator |
US20230010985A1 (en) | 2019-12-20 | 2023-01-12 | Asml Netherlands B.V. | Source material delivery system, euv radiation system, lithographic apparatus, and methods thereof |
JP7491737B2 (ja) | 2020-05-21 | 2024-05-28 | ギガフォトン株式会社 | ターゲット供給装置、ターゲット供給方法、及び電子デバイスの製造方法 |
US20230171869A1 (en) | 2020-05-22 | 2023-06-01 | Asml Netherlands B.V. | Hybrid droplet generator for extreme ultraviolet light sources in lithographic radiation systems |
EP4159009A1 (en) | 2020-05-29 | 2023-04-05 | ASML Netherlands B.V. | High pressure and vacuum level sensor in metrology radiation systems |
TW202209933A (zh) | 2020-06-29 | 2022-03-01 | 荷蘭商Asml荷蘭公司 | 在euv源之液滴產生器中加速液滴之方法及其設備 |
KR20230062831A (ko) | 2020-09-10 | 2023-05-09 | 에이에스엠엘 홀딩 엔.브이. | 리소그래피 장치를 위한 포드 핸들링 시스템 및 방법 |
US20220120653A1 (en) * | 2020-10-19 | 2022-04-21 | University Of Florida Research Foundation, Inc. | System and method for measuring surface tension |
WO2022268468A1 (en) | 2021-06-25 | 2022-12-29 | Asml Netherlands B.V. | Apparatus and method for producing droplets of target material in an euv source |
KR20240107136A (ko) * | 2021-11-22 | 2024-07-08 | 에이에스엠엘 네델란즈 비.브이. | 액체 타겟 재료를 방사선 소스에 공급하기 위한 장치 |
KR20240101808A (ko) * | 2021-11-22 | 2024-07-02 | 에이에스엠엘 네델란즈 비.브이. | 액체 타겟 재료 공급 장치, 연료 방출기, 방사선 소스, 리소그래피 장치, 및 액체 타겟 재료 공급 방법 |
WO2023126107A1 (en) | 2021-12-28 | 2023-07-06 | Asml Netherlands B.V. | Lithographic apparatus, illumination system, and connection sealing device with protective shield |
JP2024064515A (ja) * | 2022-10-28 | 2024-05-14 | ウシオ電機株式会社 | 原料供給装置及び光源装置 |
WO2024104842A1 (en) | 2022-11-16 | 2024-05-23 | Asml Netherlands B.V. | A droplet stream alignment mechanism and method thereof |
WO2024170295A1 (en) | 2023-02-17 | 2024-08-22 | Asml Netherlands B.V. | Target material storage and delivery system for an euv radiation source |
EP4447619A1 (en) | 2023-04-11 | 2024-10-16 | Ushio Denki Kabushiki Kaisha | Rotation body and light source apparatus |
Family Cites Families (126)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2759106A (en) | 1951-05-25 | 1956-08-14 | Wolter Hans | Optical image-forming mirror system providing for grazing incidence of rays |
US3279176A (en) | 1959-07-31 | 1966-10-18 | North American Aviation Inc | Ion rocket engine |
US3150483A (en) | 1962-05-10 | 1964-09-29 | Aerospace Corp | Plasma generator and accelerator |
US3232046A (en) | 1962-06-06 | 1966-02-01 | Aerospace Corp | Plasma generator and propulsion exhaust system |
US3322046A (en) * | 1965-01-14 | 1967-05-30 | Greif Bros Cooperage Corp | Paperboard drums and a method and apparatus for mounting the end closures thereon |
US3746870A (en) | 1970-12-21 | 1973-07-17 | Gen Electric | Coated light conduit |
US3969628A (en) | 1974-04-04 | 1976-07-13 | The United States Of America As Represented By The Secretary Of The Army | Intense, energetic electron beam assisted X-ray generator |
US4042848A (en) | 1974-05-17 | 1977-08-16 | Ja Hyun Lee | Hypocycloidal pinch device |
US3946332A (en) | 1974-06-13 | 1976-03-23 | Samis Michael A | High power density continuous wave plasma glow jet laser system |
US3961197A (en) | 1974-08-21 | 1976-06-01 | The United States Of America As Represented By The United States Energy Research And Development Administration | X-ray generator |
US3960473A (en) | 1975-02-06 | 1976-06-01 | The Glastic Corporation | Die structure for forming a serrated rod |
US4162160A (en) | 1977-08-25 | 1979-07-24 | Fansteel Inc. | Electrical contact material and method for making the same |
US4143275A (en) | 1977-09-28 | 1979-03-06 | Battelle Memorial Institute | Applying radiation |
US4203393A (en) | 1979-01-04 | 1980-05-20 | Ford Motor Company | Plasma jet ignition engine and method |
JPS5756668A (en) | 1980-09-18 | 1982-04-05 | Nissan Motor Co Ltd | Plasma igniter |
US4364342A (en) | 1980-10-01 | 1982-12-21 | Ford Motor Company | Ignition system employing plasma spray |
USRE34806E (en) | 1980-11-25 | 1994-12-13 | Celestech, Inc. | Magnetoplasmadynamic processor, applications thereof and methods |
US4538291A (en) | 1981-11-09 | 1985-08-27 | Kabushiki Kaisha Suwa Seikosha | X-ray source |
US4633492A (en) | 1982-09-20 | 1986-12-30 | Eaton Corporation | Plasma pinch X-ray method |
US4618971A (en) | 1982-09-20 | 1986-10-21 | Eaton Corporation | X-ray lithography system |
US4504964A (en) | 1982-09-20 | 1985-03-12 | Eaton Corporation | Laser beam plasma pinch X-ray system |
US4536884A (en) | 1982-09-20 | 1985-08-20 | Eaton Corporation | Plasma pinch X-ray apparatus |
US4507588A (en) | 1983-02-28 | 1985-03-26 | Board Of Trustees Operating Michigan State University | Ion generating apparatus and method for the use thereof |
DE3332711A1 (de) | 1983-09-10 | 1985-03-28 | Fa. Carl Zeiss, 7920 Heidenheim | Vorrichtung zur erzeugung einer plasmaquelle mit hoher strahlungsintensitaet im roentgenbereich |
JPS60175351A (ja) | 1984-02-14 | 1985-09-09 | Nippon Telegr & Teleph Corp <Ntt> | X線発生装置およびx線露光法 |
US4561406A (en) | 1984-05-25 | 1985-12-31 | Combustion Electromagnetics, Inc. | Winged reentrant electromagnetic combustion chamber |
US4837794A (en) | 1984-10-12 | 1989-06-06 | Maxwell Laboratories Inc. | Filter apparatus for use with an x-ray source |
JPS61153935A (ja) * | 1984-12-26 | 1986-07-12 | Toshiba Corp | プラズマx線発生装置 |
US4626193A (en) | 1985-08-02 | 1986-12-02 | Itt Corporation | Direct spark ignition system |
US4774914A (en) | 1985-09-24 | 1988-10-04 | Combustion Electromagnetics, Inc. | Electromagnetic ignition--an ignition system producing a large size and intense capacitive and inductive spark with an intense electromagnetic field feeding the spark |
CA1239486A (en) | 1985-10-03 | 1988-07-19 | Rajendra P. Gupta | Gas discharge derived annular plasma pinch x-ray source |
CA1239487A (en) | 1985-10-03 | 1988-07-19 | National Research Council Of Canada | Multiple vacuum arc derived plasma pinch x-ray source |
US4928020A (en) | 1988-04-05 | 1990-05-22 | The United States Of America As Represented By The United States Department Of Energy | Saturable inductor and transformer structures for magnetic pulse compression |
USRE35806E (en) * | 1988-11-16 | 1998-05-26 | Sgs-Thomson Microelectronics S.R.L. | Multipurpose, internally configurable integrated circuit for driving a switching mode external inductive loads according to a selectable connection scheme |
GB8918429D0 (en) * | 1989-08-12 | 1989-09-20 | Lucas Ind Plc | Fuel pumping apparatus |
DE3927089C1 (ja) | 1989-08-17 | 1991-04-25 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | |
US5102776A (en) | 1989-11-09 | 1992-04-07 | Cornell Research Foundation, Inc. | Method and apparatus for microlithography using x-pinch x-ray source |
US5027076A (en) | 1990-01-29 | 1991-06-25 | Ball Corporation | Open cage density sensor |
US5226948A (en) | 1990-08-30 | 1993-07-13 | University Of Southern California | Method and apparatus for droplet stream manufacturing |
US5171360A (en) | 1990-08-30 | 1992-12-15 | University Of Southern California | Method for droplet stream manufacturing |
US5259593A (en) | 1990-08-30 | 1993-11-09 | University Of Southern California | Apparatus for droplet stream manufacturing |
US5175755A (en) | 1990-10-31 | 1992-12-29 | X-Ray Optical System, Inc. | Use of a kumakhov lens for x-ray lithography |
US5126638A (en) | 1991-05-13 | 1992-06-30 | Maxwell Laboratories, Inc. | Coaxial pseudospark discharge switch |
US5142166A (en) | 1991-10-16 | 1992-08-25 | Science Research Laboratory, Inc. | High voltage pulsed power source |
JPH0816720B2 (ja) | 1992-04-21 | 1996-02-21 | 日本航空電子工業株式会社 | 軟x線多層膜反射鏡 |
US5411224A (en) | 1993-04-08 | 1995-05-02 | Dearman; Raymond M. | Guard for jet engine |
US5313481A (en) | 1993-09-29 | 1994-05-17 | The United States Of America As Represented By The United States Department Of Energy | Copper laser modulator driving assembly including a magnetic compression laser |
US5448580A (en) | 1994-07-05 | 1995-09-05 | The United States Of America As Represented By The United States Department Of Energy | Air and water cooled modulator |
US5504795A (en) | 1995-02-06 | 1996-04-02 | Plex Corporation | Plasma X-ray source |
WO1996025778A1 (en) | 1995-02-17 | 1996-08-22 | Cymer Laser Technologies | Pulse power generating circuit with energy recovery |
US5938102A (en) | 1995-09-25 | 1999-08-17 | Muntz; Eric Phillip | High speed jet soldering system |
US5894985A (en) | 1995-09-25 | 1999-04-20 | Rapid Analysis Development Company | Jet soldering system and method |
US6186192B1 (en) | 1995-09-25 | 2001-02-13 | Rapid Analysis And Development Company | Jet soldering system and method |
US5894980A (en) | 1995-09-25 | 1999-04-20 | Rapid Analysis Development Comapny | Jet soldering system and method |
US6276589B1 (en) | 1995-09-25 | 2001-08-21 | Speedline Technologies, Inc. | Jet soldering system and method |
US5830336A (en) | 1995-12-05 | 1998-11-03 | Minnesota Mining And Manufacturing Company | Sputtering of lithium |
SE510133C2 (sv) * | 1996-04-25 | 1999-04-19 | Jettec Ab | Laser-plasma röntgenkälla utnyttjande vätskor som strålmål |
DE69802240T2 (de) * | 1997-02-06 | 2002-06-27 | Koninklijke Philips Electronics N.V., Eindhoven | Dosiervorrichtung für flüssigkeiten |
US6224180B1 (en) | 1997-02-21 | 2001-05-01 | Gerald Pham-Van-Diep | High speed jet soldering system |
US5963616A (en) | 1997-03-11 | 1999-10-05 | University Of Central Florida | Configurations, materials and wavelengths for EUV lithium plasma discharge lamps |
US6031241A (en) | 1997-03-11 | 2000-02-29 | University Of Central Florida | Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications |
JP3385898B2 (ja) | 1997-03-24 | 2003-03-10 | 安藤電気株式会社 | 可変波長半導体レーザ光源 |
US5936988A (en) | 1997-12-15 | 1999-08-10 | Cymer, Inc. | High pulse rate pulse power system |
US5866871A (en) | 1997-04-28 | 1999-02-02 | Birx; Daniel | Plasma gun and methods for the use thereof |
US6172324B1 (en) | 1997-04-28 | 2001-01-09 | Science Research Laboratory, Inc. | Plasma focus radiation source |
US6452199B1 (en) | 1997-05-12 | 2002-09-17 | Cymer, Inc. | Plasma focus high energy photon source with blast shield |
US6744060B2 (en) | 1997-05-12 | 2004-06-01 | Cymer, Inc. | Pulse power system for extreme ultraviolet and x-ray sources |
US5763930A (en) | 1997-05-12 | 1998-06-09 | Cymer, Inc. | Plasma focus high energy photon source |
US6566667B1 (en) | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
US6064072A (en) | 1997-05-12 | 2000-05-16 | Cymer, Inc. | Plasma focus high energy photon source |
US6586757B2 (en) | 1997-05-12 | 2003-07-01 | Cymer, Inc. | Plasma focus light source with active and buffer gas control |
US6566668B2 (en) | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with tandem ellipsoidal mirror units |
US6815700B2 (en) | 1997-05-12 | 2004-11-09 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
JPH11283900A (ja) * | 1998-03-27 | 1999-10-15 | Nikon Corp | 露光装置 |
US6580517B2 (en) | 2000-03-01 | 2003-06-17 | Lambda Physik Ag | Absolute wavelength calibration of lithography laser using multiple element or tandem see through hollow cathode lamp |
JP2000091096A (ja) | 1998-09-14 | 2000-03-31 | Nikon Corp | X線発生装置 |
US6285743B1 (en) | 1998-09-14 | 2001-09-04 | Nikon Corporation | Method and apparatus for soft X-ray generation |
US6031598A (en) | 1998-09-25 | 2000-02-29 | Euv Llc | Extreme ultraviolet lithography machine |
US6307913B1 (en) | 1998-10-27 | 2001-10-23 | Jmar Research, Inc. | Shaped source of soft x-ray, extreme ultraviolet and ultraviolet radiation |
US6493323B1 (en) * | 1999-05-14 | 2002-12-10 | Lucent Technologies Inc. | Asynchronous object oriented configuration control system for highly reliable distributed systems |
US6228512B1 (en) | 1999-05-26 | 2001-05-08 | The Regents Of The University Of California | MoRu/Be multilayers for extreme ultraviolet applications |
TW561279B (en) | 1999-07-02 | 2003-11-11 | Asml Netherlands Bv | Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation |
US6317448B1 (en) | 1999-09-23 | 2001-11-13 | Cymer, Inc. | Bandwidth estimating technique for narrow band laser |
JP2001108799A (ja) * | 1999-10-08 | 2001-04-20 | Nikon Corp | X線発生装置、x線露光装置及び半導体デバイスの製造方法 |
US6377651B1 (en) | 1999-10-11 | 2002-04-23 | University Of Central Florida | Laser plasma source for extreme ultraviolet lithography using a water droplet target |
US6831963B2 (en) | 2000-10-20 | 2004-12-14 | University Of Central Florida | EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions |
FR2799667B1 (fr) * | 1999-10-18 | 2002-03-08 | Commissariat Energie Atomique | Procede et dispositif de generation d'un brouillard dense de gouttelettes micrometriques et submicrometriques, application a la generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie |
TWI246872B (en) | 1999-12-17 | 2006-01-01 | Asml Netherlands Bv | Radiation source for use in lithographic projection apparatus |
US6493423B1 (en) | 1999-12-24 | 2002-12-10 | Koninklijke Philips Electronics N.V. | Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit |
US6195272B1 (en) | 2000-03-16 | 2001-02-27 | Joseph E. Pascente | Pulsed high voltage power supply radiography system having a one to one correspondence between low voltage input pulses and high voltage output pulses |
DE10016008A1 (de) | 2000-03-31 | 2001-10-11 | Zeiss Carl | Villagensystem und dessen Herstellung |
US6647086B2 (en) | 2000-05-19 | 2003-11-11 | Canon Kabushiki Kaisha | X-ray exposure apparatus |
US6562099B2 (en) | 2000-05-22 | 2003-05-13 | The Regents Of The University Of California | High-speed fabrication of highly uniform metallic microspheres |
US6491737B2 (en) | 2000-05-22 | 2002-12-10 | The Regents Of The University Of California | High-speed fabrication of highly uniform ultra-small metallic microspheres |
US6520402B2 (en) | 2000-05-22 | 2003-02-18 | The Regents Of The University Of California | High-speed direct writing with metallic microspheres |
US6904073B2 (en) | 2001-01-29 | 2005-06-07 | Cymer, Inc. | High power deep ultraviolet laser with long life optics |
JP2002006096A (ja) | 2000-06-23 | 2002-01-09 | Nikon Corp | 電磁波発生装置、これを用いた半導体製造装置並びに半導体デバイスの製造方法 |
AU2002223125A1 (en) * | 2000-11-15 | 2002-05-27 | Nikon Corporation | Method and device for transfer, method and device for exposure, and method of manufacturing device |
US6576912B2 (en) | 2001-01-03 | 2003-06-10 | Hugo M. Visser | Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window |
US6804327B2 (en) | 2001-04-03 | 2004-10-12 | Lambda Physik Ag | Method and apparatus for generating high output power gas discharge based source of extreme ultraviolet radiation and/or soft x-rays |
FR2823949A1 (fr) * | 2001-04-18 | 2002-10-25 | Commissariat Energie Atomique | Procede et dispositif de generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie |
US6396900B1 (en) | 2001-05-01 | 2002-05-28 | The Regents Of The University Of California | Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application |
US7378673B2 (en) * | 2005-02-25 | 2008-05-27 | Cymer, Inc. | Source material dispenser for EUV light source |
US20030008148A1 (en) | 2001-07-03 | 2003-01-09 | Sasa Bajt | Optimized capping layers for EUV multilayers |
DE10151080C1 (de) | 2001-10-10 | 2002-12-05 | Xtreme Tech Gmbh | Einrichtung und Verfahren zum Erzeugen von extrem ultravioletter (EUV-)Strahlung auf Basis einer Gasentladung |
JP4111487B2 (ja) | 2002-04-05 | 2008-07-02 | ギガフォトン株式会社 | 極端紫外光源装置 |
US6855943B2 (en) * | 2002-05-28 | 2005-02-15 | Northrop Grumman Corporation | Droplet target delivery method for high pulse-rate laser-plasma extreme ultraviolet light source |
US6744851B2 (en) * | 2002-05-31 | 2004-06-01 | Northrop Grumman Corporation | Linear filament array sheet for EUV production |
JP4088485B2 (ja) * | 2002-07-04 | 2008-05-21 | オムロンレーザーフロント株式会社 | 光波発生装置及び光波発生方法 |
SG129259A1 (en) * | 2002-10-03 | 2007-02-26 | Asml Netherlands Bv | Radiation source lithographic apparatus, and device manufacturing method |
DE10260376A1 (de) * | 2002-12-13 | 2004-07-15 | Forschungsverbund Berlin E.V. | Vorrichtung und Verfahren zur Erzeugung eines Tröpfchen-Targets |
GB0301975D0 (en) | 2003-01-29 | 2003-02-26 | Rhodia Cons Spec Ltd | Treating slurries |
JP4264505B2 (ja) * | 2003-03-24 | 2009-05-20 | 独立行政法人産業技術総合研究所 | レーザープラズマ発生方法及び装置 |
DE10326279A1 (de) * | 2003-06-11 | 2005-01-05 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Plasma-basierte Erzeugung von Röntgenstrahlung mit einem schichtförmigen Targetmaterial |
US6933515B2 (en) | 2003-06-26 | 2005-08-23 | University Of Central Florida Research Foundation | Laser-produced plasma EUV light source with isolated plasma |
JP2005032510A (ja) * | 2003-07-10 | 2005-02-03 | Nikon Corp | Euv光源、露光装置及び露光方法 |
DE10350614B4 (de) * | 2003-10-30 | 2007-11-29 | Bruker Daltonik Gmbh | Dispenser |
JP2005216983A (ja) * | 2004-01-28 | 2005-08-11 | Nikon Corp | 超音波アクチュエータ及びeuv露光装置 |
US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
DE102004036441B4 (de) * | 2004-07-23 | 2007-07-12 | Xtreme Technologies Gmbh | Vorrichtung und Verfahren zum Dosieren von Targetmaterial für die Erzeugung kurzwelliger elektromagnetischer Strahlung |
JP4578883B2 (ja) * | 2004-08-02 | 2010-11-10 | 株式会社小松製作所 | 極端紫外光源装置 |
US7122791B2 (en) * | 2004-09-03 | 2006-10-17 | Agilent Technologies, Inc. | Capillaries for mass spectrometry |
US7141807B2 (en) * | 2004-10-22 | 2006-11-28 | Agilent Technologies, Inc. | Nanowire capillaries for mass spectrometry |
US7637403B2 (en) * | 2004-10-25 | 2009-12-29 | Plex Llc | Liquid metal droplet generator |
US7060975B2 (en) * | 2004-11-05 | 2006-06-13 | Agilent Technologies, Inc. | Electrospray devices for mass spectrometry |
US7449703B2 (en) * | 2005-02-25 | 2008-11-11 | Cymer, Inc. | Method and apparatus for EUV plasma source target delivery target material handling |
-
2005
- 2005-02-25 US US11/067,124 patent/US7405416B2/en not_active Expired - Fee Related
- 2005-03-23 US US11/088,475 patent/US7122816B2/en active Active
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- 2012-02-24 JP JP2012039168A patent/JP5643779B2/ja active Active
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JP2008532286A (ja) | 2008-08-14 |
KR20070110886A (ko) | 2007-11-20 |
US7838854B2 (en) | 2010-11-23 |
EP1867218A4 (en) | 2011-07-06 |
JP5643779B2 (ja) | 2014-12-17 |
EP1867218A2 (en) | 2007-12-19 |
EP1867218B1 (en) | 2018-08-22 |
US7405416B2 (en) | 2008-07-29 |
US20060192154A1 (en) | 2006-08-31 |
KR101235023B1 (ko) | 2013-02-21 |
WO2006093693A3 (en) | 2009-04-16 |
US20060192155A1 (en) | 2006-08-31 |
US20080283776A1 (en) | 2008-11-20 |
US7122816B2 (en) | 2006-10-17 |
WO2006093693A2 (en) | 2006-09-08 |
JP2008532228A (ja) | 2008-08-14 |
JP5455308B2 (ja) | 2014-03-26 |
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