JP4560502B2 - 電界効果型トランジスタ - Google Patents

電界効果型トランジスタ Download PDF

Info

Publication number
JP4560502B2
JP4560502B2 JP2006221552A JP2006221552A JP4560502B2 JP 4560502 B2 JP4560502 B2 JP 4560502B2 JP 2006221552 A JP2006221552 A JP 2006221552A JP 2006221552 A JP2006221552 A JP 2006221552A JP 4560502 B2 JP4560502 B2 JP 4560502B2
Authority
JP
Japan
Prior art keywords
film
hydrogen
amorphous oxide
channel layer
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006221552A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007103918A5 (cg-RX-API-DMAC7.html
JP2007103918A (ja
Inventor
達哉 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006221552A priority Critical patent/JP4560502B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to US11/993,456 priority patent/US7791074B2/en
Priority to EP14184889.5A priority patent/EP2816607B1/en
Priority to PCT/JP2006/317936 priority patent/WO2007029844A1/en
Priority to CN201110356335.3A priority patent/CN102496577B/zh
Priority to KR1020087008191A priority patent/KR101051204B1/ko
Priority to CN2006800325346A priority patent/CN101258607B/zh
Priority to CN2010102032047A priority patent/CN101859711B/zh
Priority to EP11161456.6A priority patent/EP2339639B1/en
Priority to EP06797762A priority patent/EP1915784A1/en
Publication of JP2007103918A publication Critical patent/JP2007103918A/ja
Publication of JP2007103918A5 publication Critical patent/JP2007103918A5/ja
Priority to US12/833,855 priority patent/US7956361B2/en
Priority to US12/833,850 priority patent/US7935582B2/en
Application granted granted Critical
Publication of JP4560502B2 publication Critical patent/JP4560502B2/ja
Priority to US13/089,703 priority patent/US8154024B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2006221552A 2005-09-06 2006-08-15 電界効果型トランジスタ Expired - Fee Related JP4560502B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2006221552A JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ
EP06797762A EP1915784A1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
PCT/JP2006/317936 WO2007029844A1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
CN201110356335.3A CN102496577B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法
KR1020087008191A KR101051204B1 (ko) 2005-09-06 2006-09-05 아몰퍼스 산화물막을 채널층에 이용한 전계 효과트랜지스터, 아몰퍼스 산화물막을 채널층에 이용한 전계효과 트랜지스터의 제조 방법 및 아몰퍼스 산화물막의 제조방법
CN2006800325346A CN101258607B (zh) 2005-09-06 2006-09-05 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
CN2010102032047A CN101859711B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法
EP11161456.6A EP2339639B1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer
US11/993,456 US7791074B2 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
EP14184889.5A EP2816607B1 (en) 2005-09-06 2006-09-05 Field effect transistor using amorphous oxide film as channel layer
US12/833,855 US7956361B2 (en) 2005-09-06 2010-07-09 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
US12/833,850 US7935582B2 (en) 2005-09-06 2010-07-09 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film
US13/089,703 US8154024B2 (en) 2005-09-06 2011-04-19 Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005258263 2005-09-06
JP2006221552A JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010108104A Division JP5295170B2 (ja) 2005-09-06 2010-05-10 アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2007103918A JP2007103918A (ja) 2007-04-19
JP2007103918A5 JP2007103918A5 (cg-RX-API-DMAC7.html) 2009-11-05
JP4560502B2 true JP4560502B2 (ja) 2010-10-13

Family

ID=37460356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006221552A Expired - Fee Related JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ

Country Status (6)

Country Link
US (4) US7791074B2 (cg-RX-API-DMAC7.html)
EP (3) EP2339639B1 (cg-RX-API-DMAC7.html)
JP (1) JP4560502B2 (cg-RX-API-DMAC7.html)
KR (1) KR101051204B1 (cg-RX-API-DMAC7.html)
CN (2) CN102496577B (cg-RX-API-DMAC7.html)
WO (1) WO2007029844A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160114562A (ko) * 2009-02-06 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법

Families Citing this family (325)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1737044B1 (en) * 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
EP2455975B1 (en) 2004-11-10 2015-10-28 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
JP5058469B2 (ja) * 2005-09-06 2012-10-24 キヤノン株式会社 スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法
CN101258607B (zh) * 2005-09-06 2011-01-05 佳能株式会社 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5099740B2 (ja) * 2005-12-19 2012-12-19 財団法人高知県産業振興センター 薄膜トランジスタ
JP5110803B2 (ja) 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
KR100982395B1 (ko) * 2007-04-25 2010-09-14 주식회사 엘지화학 박막 트랜지스터 및 이의 제조방법
WO2008139860A1 (ja) * 2007-05-07 2008-11-20 Idemitsu Kosan Co., Ltd. 半導体薄膜、半導体薄膜の製造方法、および、半導体素子
US8803781B2 (en) * 2007-05-18 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US9434642B2 (en) 2007-05-21 2016-09-06 Corning Incorporated Mechanically flexible and durable substrates
ATE490560T1 (de) * 2007-05-31 2010-12-15 Canon Kk Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiter
CN101910449B (zh) * 2007-12-28 2012-10-31 株式会社爱发科 透明导电膜的成膜方法和成膜装置
JP5219529B2 (ja) * 2008-01-23 2013-06-26 キヤノン株式会社 電界効果型トランジスタ及び、該電界効果型トランジスタを備えた表示装置
JP2009206508A (ja) * 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
KR100963026B1 (ko) * 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5291105B2 (ja) * 2008-08-15 2013-09-18 株式会社アルバック 電界効果型トランジスタの製造方法
US8129718B2 (en) * 2008-08-28 2012-03-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor and thin film transistor using the same
JP5430113B2 (ja) * 2008-10-08 2014-02-26 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
WO2010047077A1 (ja) 2008-10-23 2010-04-29 出光興産株式会社 薄膜トランジスタ及びその製造方法
JP5616012B2 (ja) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
KR101751661B1 (ko) 2008-12-19 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터의 제작 방법
EP2380202B1 (en) * 2008-12-24 2016-02-17 3M Innovative Properties Company Stability enhancements in metal oxide semiconductor thin film transistors
EP2202802B1 (en) * 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
TWI475616B (zh) * 2008-12-26 2015-03-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5504008B2 (ja) * 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
KR102159147B1 (ko) * 2009-03-12 2020-09-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101681884B1 (ko) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
US8338226B2 (en) * 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
US8865516B2 (en) * 2009-06-29 2014-10-21 Sharp Kabushiki Kaisha Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device
KR102256492B1 (ko) 2009-06-30 2021-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR102458127B1 (ko) * 2009-06-30 2022-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR101810699B1 (ko) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
JP5478165B2 (ja) * 2009-06-30 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
JP5640478B2 (ja) * 2009-07-09 2014-12-17 株式会社リコー 電界効果型トランジスタの製造方法及び電界効果型トランジスタ
WO2011007677A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011007682A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2011033993A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2544237B1 (en) * 2009-09-16 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101809759B1 (ko) * 2009-09-24 2018-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 그 제조 방법
WO2011039853A1 (ja) 2009-09-30 2011-04-07 キヤノン株式会社 薄膜トランジスタ
KR20120084751A (ko) 2009-10-05 2012-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
EP2486593B1 (en) 2009-10-09 2017-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101801538B1 (ko) * 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR101915251B1 (ko) * 2009-10-16 2018-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2489032B1 (en) 2009-10-16 2017-05-31 Semiconductor Energy Laboratory Co. Ltd. Liquid crystal display device and electronic apparatus having the same
KR101745747B1 (ko) * 2009-10-16 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR101801540B1 (ko) 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
CN102598280B (zh) * 2009-10-21 2016-05-18 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
KR101872229B1 (ko) * 2009-10-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104681568B (zh) 2009-10-21 2017-11-21 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
WO2011049230A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011048923A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
WO2011048959A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101789309B1 (ko) 2009-10-21 2017-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
CN102723364B (zh) 2009-10-21 2015-02-25 株式会社半导体能源研究所 半导体器件
KR101969279B1 (ko) * 2009-10-29 2019-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101939712B1 (ko) * 2009-10-29 2019-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101752348B1 (ko) * 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
CN102668095B (zh) * 2009-10-30 2016-08-03 株式会社半导体能源研究所 晶体管
CN105070717B (zh) 2009-10-30 2019-01-01 株式会社半导体能源研究所 半导体装置
KR101796909B1 (ko) * 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
SG178895A1 (en) * 2009-10-30 2012-04-27 Semiconductor Energy Lab Semiconductor device
KR102142450B1 (ko) * 2009-10-30 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011052410A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
KR20120091243A (ko) * 2009-10-30 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102576172B (zh) 2009-10-30 2016-01-27 株式会社半导体能源研究所 液晶显示设备、其驱动方法以及包括该液晶显示设备的电子电器
CN106057819B (zh) * 2009-10-30 2019-03-15 株式会社半导体能源研究所 半导体装置
WO2011052411A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101849321B1 (ko) * 2009-11-06 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101952065B1 (ko) 2009-11-06 2019-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 동작 방법
KR101753927B1 (ko) * 2009-11-06 2017-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011055638A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device
EP2497011A4 (en) * 2009-11-06 2013-10-02 Semiconductor Energy Lab TOUCH PANEL AND METHOD FOR CONTROLLING TOUCH PANEL
CN104681079B (zh) * 2009-11-06 2018-02-02 株式会社半导体能源研究所 半导体装置及用于驱动半导体装置的方法
KR101930230B1 (ko) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR101707159B1 (ko) 2009-11-06 2017-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5656325B2 (ja) * 2009-11-13 2015-01-21 株式会社半導体エネルギー研究所 非線形素子、及び表示装置
WO2011058934A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011058882A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
KR101738996B1 (ko) 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 메모리 소자를 포함하는 장치
KR101931206B1 (ko) * 2009-11-13 2018-12-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102668097B (zh) 2009-11-13 2015-08-12 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20230173233A (ko) * 2009-11-13 2023-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
WO2011062029A1 (en) * 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
MY166309A (en) 2009-11-20 2018-06-25 Semiconductor Energy Lab Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR101800852B1 (ko) * 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011062041A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
CN102668063B (zh) 2009-11-20 2015-02-18 株式会社半导体能源研究所 半导体装置
KR101811999B1 (ko) 2009-11-20 2017-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101370301B1 (ko) 2009-11-20 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
CN102598266B (zh) * 2009-11-20 2015-04-22 株式会社半导体能源研究所 半导体装置
KR101945660B1 (ko) * 2009-11-20 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
JP5762723B2 (ja) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
WO2011062042A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5657878B2 (ja) * 2009-11-20 2015-01-21 株式会社半導体エネルギー研究所 トランジスタの作製方法
KR101662359B1 (ko) * 2009-11-24 2016-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 셀을 포함하는 반도체 장치
CN102640292B (zh) 2009-11-27 2015-11-25 株式会社半导体能源研究所 半导体装置和及其制造方法
CN102640293B (zh) * 2009-11-27 2015-07-22 株式会社半导体能源研究所 半导体器件
KR101803254B1 (ko) * 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065209A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
WO2011065210A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
CN105206514B (zh) 2009-11-28 2018-04-10 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
KR101895080B1 (ko) 2009-11-28 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011065230A1 (en) 2009-11-30 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
KR101464776B1 (ko) * 2009-12-01 2014-11-25 엘지디스플레이 주식회사 탄소나노튜브 분산액, 이를 이용한 박막 및 표시장치의 제조방법
KR20120099475A (ko) 2009-12-04 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101840623B1 (ko) * 2009-12-04 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이를 포함하는 전자 기기
KR101857693B1 (ko) 2009-12-04 2018-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20120103676A (ko) 2009-12-04 2012-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
WO2011068021A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011068025A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
KR20120107107A (ko) * 2009-12-04 2012-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101511076B1 (ko) 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
IN2012DN04871A (cg-RX-API-DMAC7.html) 2009-12-11 2015-09-25 Semiconductor Energy Laoboratory Co Ltd
JP5727204B2 (ja) * 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102656683B (zh) 2009-12-11 2015-02-11 株式会社半导体能源研究所 半导体装置
KR20120102748A (ko) * 2009-12-11 2012-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터
WO2011074394A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Display device including optical sensor and driving method thereof
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101481399B1 (ko) 2009-12-18 2015-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102329671B1 (ko) 2009-12-18 2021-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101729933B1 (ko) * 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
WO2011074379A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
KR101768433B1 (ko) 2009-12-18 2017-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR101765849B1 (ko) 2009-12-18 2017-08-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
WO2011077926A1 (en) * 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR101870119B1 (ko) * 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102656801B (zh) 2009-12-25 2016-04-27 株式会社半导体能源研究所 存储器装置、半导体器件和电子装置
EP3550604A1 (en) * 2009-12-25 2019-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011077925A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
KR102111309B1 (ko) * 2009-12-25 2020-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR101749944B1 (ko) * 2009-12-28 2017-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
IN2012DN05057A (cg-RX-API-DMAC7.html) 2009-12-28 2015-10-09 Semiconductor Energy Lab
KR101760537B1 (ko) 2009-12-28 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101762316B1 (ko) 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101791279B1 (ko) * 2010-01-15 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101848516B1 (ko) 2010-01-15 2018-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011086812A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101798367B1 (ko) 2010-01-15 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011089849A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
KR101747421B1 (ko) 2010-01-20 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
KR101978106B1 (ko) 2010-01-20 2019-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR101787734B1 (ko) * 2010-01-20 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2011089843A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
EP2526619B1 (en) 2010-01-20 2016-03-23 Semiconductor Energy Laboratory Co. Ltd. Signal processing circuit and method for driving the same
KR101773641B1 (ko) 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR101873730B1 (ko) * 2010-01-24 2018-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101299256B1 (ko) 2010-01-29 2013-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR102094131B1 (ko) * 2010-02-05 2020-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 구동하는 방법
CN102725842B (zh) * 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
WO2011096277A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR101921618B1 (ko) * 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
WO2011096286A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and semiconductor device
US8617920B2 (en) * 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011099360A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR101817054B1 (ko) 2010-02-12 2018-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 포함한 표시 장치
KR101811204B1 (ko) * 2010-02-12 2017-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
JP5569780B2 (ja) * 2010-02-18 2014-08-13 国立大学法人東京農工大学 薄膜トランジスタの製造方法
WO2011102233A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101686089B1 (ko) 2010-02-19 2016-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102386149B1 (ko) 2010-02-23 2022-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN102754022B (zh) 2010-02-26 2016-11-09 株式会社半导体能源研究所 液晶显示装置
KR101733765B1 (ko) 2010-02-26 2017-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 구동 방법
WO2011105198A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101878206B1 (ko) * 2010-03-05 2018-07-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법
KR101867272B1 (ko) * 2010-03-05 2018-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그의 제작 방법
KR102220018B1 (ko) 2010-03-08 2021-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
DE112011100840T5 (de) * 2010-03-08 2013-01-17 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114868A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101891065B1 (ko) 2010-03-19 2018-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 구동 방법
CN102812547B (zh) 2010-03-19 2015-09-09 株式会社半导体能源研究所 半导体装置
WO2011114905A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN105789321B (zh) * 2010-03-26 2019-08-20 株式会社半导体能源研究所 半导体装置的制造方法
WO2011118364A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110240462A1 (en) * 2010-04-02 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and method for manufacturing semiconductor device
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2011129233A1 (en) * 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101879570B1 (ko) 2010-04-28 2018-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 제작 방법
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011135987A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8664658B2 (en) * 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8416622B2 (en) * 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8928846B2 (en) 2010-05-21 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having dielectric film over and in contact with wall-like structures
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR101808198B1 (ko) 2010-05-21 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8779478B2 (en) 2010-06-01 2014-07-15 Sharp Kabushiki Kaisha Thin film transistor
US8779433B2 (en) * 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101350751B1 (ko) 2010-07-01 2014-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
US9473714B2 (en) * 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
KR20130090405A (ko) 2010-07-02 2013-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
CN106057144B (zh) * 2010-07-02 2019-03-12 株式会社半导体能源研究所 液晶显示装置及驱动液晶显示装置的方法
WO2012002186A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI541782B (zh) * 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 液晶顯示裝置
KR101311653B1 (ko) * 2010-07-05 2013-09-25 샤프 가부시키가이샤 박막 트랜지스터 메모리 및 이를 구비한 표시장치
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101859361B1 (ko) 2010-07-16 2018-05-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012014790A1 (en) * 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5671418B2 (ja) * 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI688047B (zh) * 2010-08-06 2020-03-11 半導體能源研究所股份有限公司 半導體裝置
JP5848912B2 (ja) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器
US9343480B2 (en) * 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI559409B (zh) 2010-08-16 2016-11-21 半導體能源研究所股份有限公司 半導體裝置之製造方法
JP2013009285A (ja) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
KR101979758B1 (ko) * 2010-08-27 2019-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
KR101851817B1 (ko) 2010-09-03 2018-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
JP2012256819A (ja) * 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI670711B (zh) 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
JP5680916B2 (ja) * 2010-09-15 2015-03-04 国立大学法人名古屋大学 電界効果トランジスタ及び電界効果トランジスタの製造方法
KR101856722B1 (ko) * 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 파워 절연 게이트형 전계 효과 트랜지스터
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
CN103201831B (zh) * 2010-11-05 2015-08-05 株式会社半导体能源研究所 半导体装置
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI654764B (zh) 2010-11-11 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
KR20200052993A (ko) 2010-12-03 2020-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
TWI632551B (zh) 2010-12-03 2018-08-11 半導體能源研究所股份有限公司 積體電路，其驅動方法，及半導體裝置
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US8730416B2 (en) * 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5864054B2 (ja) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
JP2012151453A (ja) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
JP5852874B2 (ja) * 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 半導体装置
TWI621121B (zh) 2011-01-05 2018-04-11 Semiconductor Energy Laboratory Co., Ltd. 儲存元件、儲存裝置、及信號處理電路
US8536571B2 (en) * 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5859839B2 (ja) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子
KR102026718B1 (ko) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
TWI564890B (zh) 2011-01-26 2017-01-01 半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
TWI525619B (zh) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 記憶體電路
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8841664B2 (en) * 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5839474B2 (ja) * 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
TWI545652B (zh) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI567735B (zh) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 記憶體電路，記憶體單元，及訊號處理電路
US9142320B2 (en) * 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
KR101919056B1 (ko) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 회로
TWI568181B (zh) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 邏輯電路及半導體裝置
KR101874144B1 (ko) 2011-05-06 2018-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
DE112012002113T5 (de) 2011-05-16 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Programmierbarer Logikbaustein
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
KR102081792B1 (ko) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 연산회로 및 연산회로의 구동방법
JP5951351B2 (ja) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 加算器及び全加算器
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP5947099B2 (ja) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 半導体装置
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9001564B2 (en) * 2011-06-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for driving the same
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
KR102084274B1 (ko) 2011-12-15 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
CN104170001B (zh) 2012-03-13 2017-03-01 株式会社半导体能源研究所 发光装置及其驱动方法
KR101955336B1 (ko) * 2012-03-13 2019-03-07 삼성전자주식회사 광 센싱 트랜지스터, 이의 제조방법 및 이를 채용한 디스플레이 패널
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
US20160315196A1 (en) * 2012-04-13 2016-10-27 The Governors Of The University Of Alberta Buried source schottky barrier thin film transistor and method of manufacture
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
KR102082794B1 (ko) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법, 및 표시 장치
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US9626889B2 (en) 2012-09-24 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Method and program for driving information processing device
TWI495615B (zh) * 2012-09-28 2015-08-11 Ind Tech Res Inst ｐ型金屬氧化物半導體材料
KR102046996B1 (ko) 2012-10-16 2019-11-21 삼성디스플레이 주식회사 박막 트랜지스터 표시판
CN104769842B (zh) 2012-11-06 2017-10-31 株式会社半导体能源研究所 半导体装置以及其驱动方法
KR102148549B1 (ko) 2012-11-28 2020-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102101863B1 (ko) 2013-01-07 2020-04-21 삼성디스플레이 주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 구비하는 표시 장치
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102112367B1 (ko) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104022044B (zh) * 2013-03-01 2017-05-10 北京京东方光电科技有限公司 氧化物薄膜晶体管及其制备方法、阵列基板和显示装置
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9171497B2 (en) * 2013-05-06 2015-10-27 Shenzhen China Star Optoelectronics Technology Co., Ltd Method for inspecting packaging effectiveness of OLED panel
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
JP6329843B2 (ja) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
US9806098B2 (en) 2013-12-10 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP6252904B2 (ja) * 2014-01-31 2017-12-27 国立研究開発法人物質・材料研究機構 酸化物半導体およびその製法
JP6442321B2 (ja) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
KR102367921B1 (ko) * 2014-03-14 2022-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 시스템
JP6659255B2 (ja) * 2014-09-02 2020-03-04 株式会社神戸製鋼所 薄膜トランジスタ
WO2016035503A1 (ja) * 2014-09-02 2016-03-10 株式会社神戸製鋼所 薄膜トランジスタ
US9450581B2 (en) 2014-09-30 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
JP6851166B2 (ja) 2015-10-12 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPWO2017072627A1 (ja) * 2015-10-28 2018-10-11 株式会社半導体エネルギー研究所 半導体装置、モジュール、電子機器および半導体装置の作製方法
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
CN105355663B (zh) * 2015-11-30 2018-05-15 武汉大学 一种氢钝化氧化锌基双沟道层薄膜晶体管及其制备方法
KR102617041B1 (ko) 2015-12-28 2023-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 장치, 텔레비전 시스템, 및 전자 기기
JP2017175022A (ja) 2016-03-24 2017-09-28 株式会社Ｊｏｌｅｄ 薄膜トランジスタ
US10490116B2 (en) 2016-07-06 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and display system
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR102420735B1 (ko) 2016-08-19 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 전원 제어 방법
CN106711192B (zh) * 2016-10-20 2019-10-11 浙江大学 一种p型CuMSnO非晶氧化物半导体薄膜及其制备方法
CN106711199B (zh) * 2016-10-20 2020-05-19 浙江大学 一种p型CuNSnO非晶氧化物半导体薄膜及其制备方法
CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
JP7321032B2 (ja) 2019-08-20 2023-08-04 東京エレクトロン株式会社 熱処理方法及び熱処理装置
CN111910155B (zh) * 2020-06-30 2022-05-31 北京航空航天大学合肥创新研究院 一种薄膜材料的改性方法及改性薄膜材料
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
CN114695561A (zh) * 2022-04-02 2022-07-01 中国科学院微电子研究所 一种平面晶体管及制造方法
CN119517744B (zh) * 2024-11-05 2025-11-14 中国科学院微电子研究所 一种氧化物半导体沟道薄膜的等离子体处理方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW237562B (cg-RX-API-DMAC7.html) * 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
DE9406929U1 (de) 1994-04-26 1994-06-16 Roto Frank Ag, 70771 Leinfelden-Echterdingen Dachfenster
US6867432B1 (en) * 1994-06-09 2005-03-15 Semiconductor Energy Lab Semiconductor device having SiOxNy gate insulating film
JP3479375B2 (ja) * 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP2967745B2 (ja) * 1997-02-06 1999-10-25 日本電気株式会社 半導体装置の製造方法
JP4536866B2 (ja) * 1999-04-27 2010-09-01 キヤノン株式会社 ナノ構造体及びその製造方法
JP3610293B2 (ja) * 1999-09-22 2005-01-12 キヤノン株式会社 細孔を有する構造体及び前記細孔を有する構造体を用いたデバイス
JP4250834B2 (ja) 1999-10-29 2009-04-08 ソニー株式会社 触媒スパッタリングによる薄膜形成方法
JP4089858B2 (ja) * 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP2003007716A (ja) 2001-06-18 2003-01-10 Sharp Corp 半導体装置およびその製造方法
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US7161173B2 (en) * 2003-05-20 2007-01-09 Burgener Ii Robert H P-type group II-VI semiconductor compounds
KR101099927B1 (ko) * 2003-05-20 2011-12-28 이데미쓰 고산 가부시키가이샤 비정질 투명 도전막, 그 원료 스퍼터링 타겟, 비정질 투명 전극 기판, 그 제조방법, 및 디스플레이용 컬러 필터
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US20050017244A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Semiconductor device
US7242039B2 (en) * 2004-03-12 2007-07-10 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP4850457B2 (ja) * 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160114562A (ko) * 2009-02-06 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102038438B1 (ko) 2009-02-06 2019-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법

Also Published As

Publication number Publication date
EP2816607B1 (en) 2017-11-15
EP2339639A2 (en) 2011-06-29
US7935582B2 (en) 2011-05-03
EP1915784A1 (en) 2008-04-30
US20090045397A1 (en) 2009-02-19
EP2339639B1 (en) 2015-03-25
EP2816607A1 (en) 2014-12-24
CN101859711A (zh) 2010-10-13
JP2007103918A (ja) 2007-04-19
US7956361B2 (en) 2011-06-07
CN102496577B (zh) 2015-01-14
US20100276689A1 (en) 2010-11-04
US20100279462A1 (en) 2010-11-04
KR101051204B1 (ko) 2011-07-21
CN102496577A (zh) 2012-06-13
US7791074B2 (en) 2010-09-07
US8154024B2 (en) 2012-04-10
EP2339639A3 (en) 2012-08-08
KR20080053355A (ko) 2008-06-12
US20110193082A1 (en) 2011-08-11
CN101859711B (zh) 2012-07-04
WO2007029844A1 (en) 2007-03-15

Similar Documents

Publication Publication Date Title
JP4560502B2 (ja) 電界効果型トランジスタ
JP5710041B2 (ja) 液晶表示装置
EP2455975B1 (en) Field effect transistor with amorphous oxide
JP5241143B2 (ja) 電界効果型トランジスタ
JP5110803B2 (ja) 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
KR100973124B1 (ko) 인듐과 아연을 포함하는 산화물 반도체 재료를 구비하는채널을 갖는 전계 효과 트랜지스터
JP2009147069A (ja) 電界効果型トランジスタ

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080207

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090323

RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20090427

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090917

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20090917

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20091001

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091007

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091204

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100510

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20100519

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100720

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100726

R150 Certificate of patent or registration of utility model

Ref document number: 4560502

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130730

Year of fee payment: 3

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101227

A072 Dismissal of procedure [no reply to invitation to correct request for examination]

Free format text: JAPANESE INTERMEDIATE CODE: A072

Effective date: 20110524

LAPS Cancellation because of no payment of annual fees