JP4509787B2 - ポリマー酸コロイドを伴って製造される水分散性ポリチオフェン - Google Patents
ポリマー酸コロイドを伴って製造される水分散性ポリチオフェン Download PDFInfo
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- JP4509787B2 JP4509787B2 JP2004540202A JP2004540202A JP4509787B2 JP 4509787 B2 JP4509787 B2 JP 4509787B2 JP 2004540202 A JP2004540202 A JP 2004540202A JP 2004540202 A JP2004540202 A JP 2004540202A JP 4509787 B2 JP4509787 B2 JP 4509787B2
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- ICPSWZFVWAPUKF-UHFFFAOYSA-N 1,1'-spirobi[fluorene] Chemical compound C1=CC=C2C=C3C4(C=5C(C6=CC=CC=C6C=5)=CC=C4)C=CC=C3C2=C1 ICPSWZFVWAPUKF-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- TUFKHKZLBZWCAW-UHFFFAOYSA-N 2-(1-ethenoxypropan-2-yloxy)ethanesulfonyl fluoride Chemical compound C=COCC(C)OCCS(F)(=O)=O TUFKHKZLBZWCAW-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- SVQOKUWDNBOKFD-UHFFFAOYSA-N 2-ethenoxyethanesulfonyl fluoride Chemical compound FS(=O)(=O)CCOC=C SVQOKUWDNBOKFD-UHFFFAOYSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229920002274 Nalgene Polymers 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 241001126918 Sycon Species 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- XGCDHPDIERKJPT-UHFFFAOYSA-N [F].[S] Chemical compound [F].[S] XGCDHPDIERKJPT-UHFFFAOYSA-N 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012062 aqueous buffer Substances 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical group O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 125000004956 cyclohexylene group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007863 gel particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920001798 poly[2-(acrylamido)-2-methyl-1-propanesulfonic acid] polymer Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical class CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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Description
陽極/緩衝層/ELポリマー/陰極
陽極は、例えば、インジウム/錫酸化物(ITO)のような、典型的には、半導体ELポリマーのさもなければ充満したπ−バンド中へ正孔を注入する能力を有する任意の材料である。陽極は、任意選択的にガラスまたはプラスチック基材上にサポートされる。ELポリマーは、典型的には、ポリ(パラフェニレンビニレン)またはポリフルオレンのような共役半導体ポリマーである。陰極は、典型的には、半導体ELポリマーのさもなければ空のπ*−バンド中へ電子を注入する能力を有する任意の材料(例えば、CaまたはBaのような)である。
(a)水およびチオフェンの均質な水性混合物を提供する工程と、
(b)コロイド形成ポリマー酸の水性分散液を提供する工程と、
(c)チオフェン混合物をコロイド形成ポリマー酸の水性分散液と組み合わせる工程と、
(d)酸化剤および触媒を、任意順序で、工程(c)の組合せの前後にコロイド形成ポリマー酸の水性分散液と組み合わせる工程と
を含んでなる。
R1およびR1’はそれぞれ独立して水素および1〜4個の炭素原子を有するアルキルから選択されるか、
またはR1およびR1’は一緒になって、1〜4個の炭素原子を有するアルキレン鎖であって任意選択的に1〜12個の炭素原子を有するアルキルもしくは芳香族基、または1,2−シクロヘキシレン基で置換されてもよいアルキレン鎖を形成し、かつ、
nは約6よりも大きい)
を有する。
−(O−CF2CFRf)a−O−CF2CFR’fSO3X
(式中、RfおよびR’fは独立してF、Clまたは1〜10個の炭素原子を有するパーフルオロ化アルキル基から選択され、a=0、1または2であり、かつ、XはH、Li、Na、KまたはN(R1)(R2)(R3)(R4)であり、R1、R2、R3、およびR4は同じまたは異なるものであり、一実施形態ではH、CH3またはC2H5である)で表される側鎖とが含まれる。別の実施形態ではXはHである。上に述べられたように、Xはまた多価であってもよい。
−O−CF2CF(CF3)−O−CF2CF2SO3X
(ここで、Xは上に定義されたようなものである)で表される側鎖とを含んでなる。このタイプのFSAポリマーは米国特許公報(特許文献3)に開示されており、テトラフルオロエチレン(TFE)とパーフルオロ化ビニルエーテルCF2=CF−O−CF2CF(CF3)−O−CF2CF2SO2F(パーフルオロ(3,6−ジオキサ−4−メチル−7−オクテンスルホニルフルオリド))(PDMOF)との共重合、引き続くスルホニルフルオリド基の加水分解によるスルホネート基への変換および必要に応じてイオン交換してそれらを所望のイオン形に変換して製造することができる。米国特許公報(特許文献4)および米国特許公報(特許文献5)に開示されているタイプのポリマーの例は、Xが上に定義されたようなものである側鎖−O−CF2CF2SO3Xを有する。このポリマーはテトラフルオロエチレン(TFE)とパーフルオロ化ビニルエーテルCF2=CF−O−CF2CF2SO2F(パーフルオロ(3−オキサ−4−ペンテンスルホニルフルオリド))(POPF)との共重合、引き続く加水分解および必要に応じてさらなるイオン交換によって製造することができる。
本比較例は、非コロイド状ポリ(エチレンジオキシチオフェン)/ポリ(スチレンスルホン酸)(PEDT/PSSA)錯体を製造するための、水溶性ポリマースルホン酸、すなわち、ポリ(スチレンスルホン酸)(PSSA)の存在下でのエチレンジオキシチオフェンの酸化重合を実証する。
本実施例は、ナフィオン(登録商標)の存在下でのエチレンジオキシチオフェンの重合を例示し、およびまた、それによって得られたポリ(エチレンジオキシチオフェン)の特性を記載する。
本比較例は、水溶性ポリ(スチレンスルホン酸)を伴って製造された市販水性PEDT分散液から乾燥された固体フィルムの特性を例示する。
本比較例は、水溶性ポリ(スチレンスルホン酸)を伴って製造された別の市販水性PEDT分散液から乾燥された固体フィルムの吸湿を例示する。
本実施例は、発明水性PEDT/ナフィオン(登録商標)から乾燥された固体フィルムの特性を例示する。
本実施例は、薄膜電界効果トランジスタでの電極としてのPEDT/ナフィオン(登録商標)の使用を例示する。
本実施例は、変化する条件下ナフィオン(登録商標)の存在下でのエチレンジオキシチオフェンの重合を例示する。3つの異なるタイプのナフィオン(登録商標)樹脂(SE−10072、DE−1021、およびDE−1020)を使用した。
本実施例は、実施例4からのPEDT/ナフィオン(登録商標)分散液から製造したフィルムの導電率の差を例示する。ガラス基材をパターン化ITO電極で製造した。緩衝層を、示された分散液からスピンキャストしてパターン化基材のトップ上にフィルムを形成し、その後真空オーブン中90℃で0.5時間ベーキングした。ITO電極間の抵抗は、ドライボックス中で高抵抗電位計を用いて測定した。フィルムの厚さは、デック−タック(Dec−Tac)表面プロファイラー(アルファ−ステップ(Alpha−Step)500表面プロファイラー、テンコール・インスツルメンツ(Tencor Instruments))を用いることによって測定した。緩衝層の導電率は、抵抗および厚さから計算する。
本実施例は、OLEDで緩衝層として使用した異なるPEDT/ナフィオン(登録商標)組成物の性能を例示する。
本実施例は、PEDT/ナフィオン(登録商標)の水性分散液の製造を例示する。ナフィオン(登録商標)は、米国特許公報(特許文献7)、実施例9の手順に類似の手順を用いて製造した、990のEWの12.5%(重量/重量)水性コロイド状分散液であった。
本実施例はPEDT/ナフィオン(登録商標)の乾燥フィルムの非分散性を例示する。
本実施例は水性PEDT/ナフィオン(登録商標)分散液のITOへの非腐食性を例示する。
本比較例は乾燥バイトロン−Pの再分散性およびそのITOへの腐食性を例示する。
これらの実施例は、多層コーティングでのPEDT/ナフィオン(登録商標)の使用を例示する。
本実施例は、水性PEDT/ナフィオン(登録商標)の多層コーティングを用いることによるより厚い層の形成を例示する。
第1層=ベーキング後99nm
第2層(総厚さ)=ベーキング後203nm
第3層(総厚さ)=ベーキング後322nm
本実施例は、PEDT/ナフィオン(登録商標)がITO陽極と接触している、2つの緩衝層を持ったOLEDでのPEDT/ナフィオン(登録商標)の使用を例示する。
本実施例は、PEDT/ナフィオン(登録商標)がEL層と接触している、2つの緩衝層を持ったOLEDでのPEDT/ナフィオン(登録商標)の使用を例示する。
本実施例は、PEDT/ナフィオン(登録商標)緩衝層と緑色発光ポリマーとを使用するOLEDデバイスの改善された動作寿命を例示する。
本実施例は、PEDT/ナフィオン(登録商標)緩衝層と赤色発光ポリマーとを使用するOLEDデバイスの改善された動作寿命を例示する。
本実施例は、PEDT/ナフィオン(登録商標)緩衝層と青色発光ポリマーとを使用するOLEDデバイスの改善された動作寿命を例示する。
これらの実施例は、異なるPEDT緩衝層に対するpHの影響を例示する。
本実施例はPEDT/ナフィオン(登録商標)の製造を例示する。ナフィオン(登録商標)は、米国特許公報(特許文献7)、実施例9の手順に類似の手順を用いて製造した、1050のEWの12.5%(重量/重量)水性コロイド状分散液であった。
本実施例は2.2のpHのPEDT/ナフィオン(登録商標)分散液の製造を例示する。
本実施例は4.3のpHのPEDT/ナフィオン(登録商標)分散液の製造を例示する。
本実施例は、リチウム塩を使用する7.0のpHのPEDT/ナフィオン(登録商標)分散液の製造を例示する。
本実施例は、ナトリウム塩を使用する7.2のpHのPEDT/ナフィオン(登録商標)分散液の製造を例示する。
本比較例は修正されたpH値のPEDT/PSSA分散液の製造を例示する。
PEDT/PSSA(AI 4083、独国レーベルクーセンのエッチ.シー.スタルク有限責任会社製のバイトロン−PのOLEDグレード)は1.8のpHを有する。
58.9gの脱イオンAI 4083(脱イオンAI 4083としてエッチ.シー.スタルクから購入した)に、総量10gのアンバーリスト15のリチウム塩を24時間かけて加えた。混合物を全時間中撹拌した。混合物を濾過し、集めた濾液のpHは3.2であると測定された。
58.18gの脱イオンAI 4083に、総量14gのアンバーリスト15のバリウム塩を約18時間かけて加えた。混合物を全時間中撹拌した。混合物を濾過し、集めた濾液のpHは3.4であると測定された。
エッチ.シー.スタルク有限責任会社から購入した、ナトリウムなしであるはずである脱イオンAI 4083をテトラブチルアンモニウム塩への変換に使用した。50.96gの脱イオンAI 4083に、総量約9gのアンバーリスト15のテトラブチルアンモニウム塩を20時間かけて加えた。混合物を全時間中撹拌した。混合物を濾過し、集めた濾液のpHは4.3であると測定された。
本実施例は、実施例16〜21および比較例5の分散液から作った緩衝層で製造したOLEDの性能を例示する。
本実施例は、PEDT/ナフィオン(登録商標)がITO接触面をエッチングしないことを例示する。
本実施例は、水性PEDT/ナフィオン(登録商標)分散液とPEDT/PSSAとの相溶性を例示する。
本実施例は、全カラーについて共通の陰極金属および共通の緩衝層ポリマーを用いるカラーOLEDディスプレイの製造および性能向上を例示する。
本実施例は、共分散液ありの水中のPEDOT/ナフィオン(登録商標)分散液の製造を例示する。ナフィオン(登録商標)は、米国特許公報(特許文献7)、実施例9の手順に類似の手順を用いて製造した、1050のEWの12%(重量/重量)水性コロイド状分散液であった。
Claims (3)
- (a)水とチオフェンとの均質な水性混合物を提供する工程と、
(b)ポリマー酸の水性分散液を提供する工程であって、コロイド形成ポリマー酸が、ハロゲンおよび水素の合計数の少なくとも50%がフッ素原子である高度にフッ素化されたスルホン酸ポリマーである工程と、
(c)前記チオフェン混合物をコロイド形成ポリマー酸の水性分散液と組み合わせる工程と、
(d)任意の添加順序で酸化剤および触媒を工程(c)の前記分散液と組み合わせる工程と
(e)工程(d)で得られるポリチオフェン分散液を、陽イオン交換樹脂、陰イオン交換樹脂またはそれらの混合物である少なくとも1種のイオン交換樹脂と接触させる工程と
を含むことを特徴とするポリチオフェンと少なくとも1種のコロイド形成ポリマー酸との水性分散液の製造方法。 - 工程(d)において、共分散剤、共酸、または共分散剤および共酸の両方を、工程(c)の前記分散液とさらに組み合わせることを特徴とする請求項1に記載の方法。
- 前記酸化剤は、過硫酸ナトリウム、過硫酸カリウム、過硫酸アンモニウムまたはそれらの組合せから選択され、
前記触媒は、硫酸第二鉄、塩化第二鉄、またはそれらの混合物から選択され、および
工程(c)の分散液に対して共分散剤が組み合わせられ、前記共分散剤がエーテル、アルコール、アルコールエーテル、環状エーテル、ケトン、ニトリル、スルホキシド、およびそれらの組合せから選択され、
前記イオン交換樹脂は、スルホン化スチレン−ジビニルベンゼン共重合体、スルホン酸、スルホン化架橋スチレンポリマー、ベンゼン−ホルムアルデヒドスルホン酸、カルボン酸、アクリル酸、リン酸、第三級アミン、第四級アミン陰イオン交換樹脂およびそれらの組合せから選択される
ことを特徴とする請求項1に記載の方法。
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2003
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- 2003-09-24 JP JP2004540202A patent/JP4509787B2/ja not_active Expired - Fee Related
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- 2003-09-24 WO PCT/US2003/030026 patent/WO2004029128A2/en active Application Filing
- 2003-09-24 AU AU2003275203A patent/AU2003275203A1/en not_active Abandoned
- 2003-09-24 CA CA002499377A patent/CA2499377A1/en not_active Abandoned
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- 2003-09-24 KR KR1020057004942A patent/KR100996359B1/ko active IP Right Grant
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2006
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2008
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Also Published As
Publication number | Publication date |
---|---|
AU2003275203A1 (en) | 2004-04-19 |
HK1081977A1 (en) | 2006-05-26 |
DE60322923D1 (de) | 2008-09-25 |
JP2006500463A (ja) | 2006-01-05 |
EP1546237B2 (en) | 2019-04-24 |
KR100996359B1 (ko) | 2010-11-23 |
EP1546237B1 (en) | 2008-08-13 |
US7431866B2 (en) | 2008-10-07 |
CA2499377A1 (en) | 2004-04-08 |
US8784692B2 (en) | 2014-07-22 |
ATE404609T1 (de) | 2008-08-15 |
WO2004029128A2 (en) | 2004-04-08 |
WO2004029128A3 (en) | 2004-05-27 |
JP4829328B2 (ja) | 2011-12-07 |
KR20050073457A (ko) | 2005-07-13 |
JP2009270117A (ja) | 2009-11-19 |
EP1546237A2 (en) | 2005-06-29 |
US20130193381A1 (en) | 2013-08-01 |
US8585931B2 (en) | 2013-11-19 |
US20080296536A1 (en) | 2008-12-04 |
US20040102577A1 (en) | 2004-05-27 |
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