TWI327152B - Water dispersible polythiophenes made with polymeric acid colloids - Google Patents

Water dispersible polythiophenes made with polymeric acid colloids Download PDF

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TWI327152B
TWI327152B TW92127470A TW92127470A TWI327152B TW I327152 B TWI327152 B TW I327152B TW 92127470 A TW92127470 A TW 92127470A TW 92127470 A TW92127470 A TW 92127470A TW I327152 B TWI327152 B TW I327152B
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pedt
dispersion
layer
acid
nafion
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TW92127470A
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Chinese (zh)
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Hsu Che-Hsiung
Cao Yong
David Lecloux Daniel
Kim Sunghan
Zhang Chi
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Du Pont
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1327152 玖、發明說明: 【發明所屬之技術領域】 本發明係關於噻吩導電聚合物之水性分散液,其中該導 電聚合物係在聚酸膠體的存在下合成得到。 【先前技術】 導電聚合物已被用於許多有機電子裝置中’包括發展用 於發光顯示器之電致發光(EL)裝置t。關於EL裝置,如含 導電聚合物之有機發光二極體(0LED),此類裝置一般具有 下列構型: 陽極/緩衝層/EL聚合物/陰極 陽極一般為任何有能力將電洞注入半導電E]L聚合物如, 例如氧化銦/錫(ITO)之其他已填滿π_能帶的材料。陽極視情 況係受載於玻璃或塑膠基板上。£1^聚合物一般是共軛半導 電聚合物如聚(對苯乙炔)或聚苟。陰極一般為任何有能力將 電子注入半導電EL聚合物之其他空π*_能帶的材料(例如Ca 或 Ba)。 緩衝層一般是導電聚合物並可幫助電洞由陽極注入£1^聚 合物層。此緩衝層也被稱為電洞注入層、電洞傳遞層或可 描繪成雙層陽極的一部分。作為緩衝層所用之典型導電聚 合物包含聚苯胺及聚二氧p塞吩如聚(3,4_伸乙二氧基噻 吩)(PEDT)。如,例如美國專利第5,3〇〇,575號,標題為"聚 11塞吩分散液、其製法及其用途"中所描述般,這些材料可藉 由苯胺或二氧嘍吩單體於水性溶液中水溶性聚酸,如聚(苯 乙烯磺酸)(PSS)的存在下聚合製得。熟知的PEDT/PSS材料 OA8S\8843S 00C -6- 1327152 是由 H.C. Starck, GmbH 八 a , A司(德國Leverkusen)講得之1327152 发明Inventive Description: TECHNICAL FIELD The present invention relates to an aqueous dispersion of a thiophene conductive polymer obtained by synthesizing a conductive polymer in the presence of a polyacid colloid. [Prior Art] Conductive polymers have been used in many organic electronic devices' including the development of electroluminescent (EL) devices t for luminescent displays. With regard to EL devices, such as organic light-emitting diodes (OLEDs) containing conductive polymers, such devices generally have the following configurations: Anode/buffer layer/EL polymer/cathode anodes are generally capable of injecting holes into semiconducting. E] L polymer such as, for example, indium oxide/tin (ITO) other materials that have been filled with π-energy bands. The anode is loaded on a glass or plastic substrate as appropriate. The polymer is generally a conjugated semiconductive polymer such as poly(p-phenylacetylene) or polyfluorene. The cathode is typically any material (e.g., Ca or Ba) that is capable of injecting electrons into other empty π*-bands of the semiconductive EL polymer. The buffer layer is typically a conductive polymer and can help the hole be injected into the layer by the anode. This buffer layer is also referred to as a hole injection layer, a hole transfer layer, or a portion that can be depicted as a double layer anode. Typical conductive polymers used as the buffer layer include polyaniline and polydioxy p-cephene such as poly(3,4-ethylenedioxythiophene) (PEDT). For example, as described in U.S. Patent No. 5,3,575, entitled "Poly 11 Semen Dispersion, Methods of Making and Uses", these materials may be exemplified by aniline or dioxin. The preparation is obtained by polymerizing a water-soluble polyacid in an aqueous solution, such as poly(styrenesulfonic acid) (PSS). The well-known PEDT/PSS material OA8S\8843S 00C -6- 1327152 is spoken by H.C. Starck, GmbH VIII, A Division (Leverkusen, Germany)

Bayt〇n®-P。 以水溶性聚績酸合成得到之水性導電聚合物分散液具有 士〜的低pH值低pH可能造成含此緩衝層之虹裝置的應 力哥命降低並引起裝置内麼為 、衣直Θ腐蝕。因此,對由其製得具較佳 性質之組合物及緩衝層有需求。 導電聚合物也具有用作雷$姑 > 作電子裝置,如薄膜場效應電晶體 之電極的用途。在此類電晶體中 电日日篮Τ,有機丰導電膜係存在於 源極與汲極之間。為用於雷 €極應用中,導電聚合物與分散 或溶解該導電聚合物之液體必須與半導電聚合物及該半導 電聚合物之溶劑相容以避免導電聚合物或半導電聚合物再 溶解。由導電聚合物製成電極之導電度應大於⑽厘 Γ是歐姆的聽)°但是,以聚酸製得之導電料吩一般 提供範圍在〜10·3 S/厘米或更低導 又 尺又低之導電度。為了提高導 可將導電添加劑加入聚合物中。但是,此類添加劑的 子在對導電聚,1吩的加卫性有不利影響。因此,需要具 良好加工性及較高導電度之較佳導電聚嚙吩。 /、 【發明内容】 本發明係提供包含聚違吩與至少—種膠體形成聚酸之水 性分散液的組合物。本發明組合物可用於許多有機 置如’例如有機發光二極體(0LED)中作為緩衝層並在如薄 膜場效應電晶體之_、源極或閘極等應用中與導^ 料,如金屬奈米線或碳奈米管合併。 包、 根據另-個本發明具體實施例,提供含有柯明組合物Bayt〇n®-P. The aqueous conductive polymer dispersion obtained by synthesizing the water-soluble polyacrylic acid has a low pH and a low pH, which may cause the stress of the rainbow device containing the buffer layer to decrease and cause corrosion in the device. Therefore, there is a need for a composition and a buffer layer which are preferably produced therefrom. Conductive polymers also have utility as electrodes for use as electronic devices, such as thin film field effect transistors. In such a transistor, an electric day-to-day basket is present between the source and the drain. For use in lightning applications, the conductive polymer and the liquid dispersing or dissolving the conductive polymer must be compatible with the semiconductive polymer and the solvent of the semiconductive polymer to avoid redissolution of the conductive polymer or semiconductive polymer. . The conductivity of the electrode made of conductive polymer should be greater than (10) centistokes is ohmic). However, conductive materials made of polyacids generally provide a range of ~10·3 S/cm or lower. Low conductivity. A conductive additive is added to the polymer for improved conductivity. However, the sub-agents of this type of additive have an adverse effect on the conductivity of the conductive poly(1). Therefore, there is a need for a preferred conductive poly-doping having good processability and high electrical conductivity. SUMMARY OF THE INVENTION The present invention provides a composition comprising an aqueous dispersion of a polyphenol and at least a colloid to form a polyacid. The composition of the present invention can be used in many organic devices such as organic light-emitting diodes (OLEDs) as a buffer layer and in applications such as thin film field effect transistors, sources or gates, such as metals. The nanowire or carbon nanotubes are combined. Package, according to another embodiment of the invention, providing a composition containing a komin

O:\88\88435 DOC 1327152 澆鑄而成之緩衝層的有機電子裝置’包括電致發光裝置。 根據另一個本發明具體實施例,提供合成聚嘧吩與至少 一種膠體形成聚酸之水性分散液的方法。一種製造聚嘍吩 與至J —種膠體形成聚酸之水性分散液的方法包括: U)提供一水與p塞吩之均勻水性混合物; (b) 提供一膠體形成聚酸之水性分散液; (c) 將該嘍吩混合物與該膠體形成聚酸之水性分散液合 併;並 (d) 氧化劑及觸媒與該膠體形成聚酸之水性分散液在合併 步驟(c)之前或之後以任何順序合併。 其他具體實施例係描述於本發明實施方式中。 【實施方式】 在一個本發明具體實施例中,提供包含聚嘧吩,包括聚 二氧噻吩與膠體形成聚酸之水性分散液的組合物。如本文 所用分散液"-詞相當於—含微小粒子懸浮之連續液體媒 介。根據本發明,”連續媒介,,一般是水性液體,如水。如 本文所用"水性”一詞相當於大部分為水之液體,在一個: 體實施例中,至少約40重量%為水之液體。如本文所用"膠 體詞相當於懸浮在連續媒介中之微小粒子,該粒子具^ 笔微米大小之粒徑。如本文所用"膠體形& "一詞相當於八 散在水溶液中時可形成微小粒子之物質,即膠體形'ν,,ι 酸不是水溶性的》 ♦ 如本文所用"包含"、"含有”、"包括"、"涵蓋"、"呈有,, "具"或其任何其他變化詞等詞係希望涵蓋㈣ /含' 。S 。例O:\88\88435 DOC 1327152 The organic electronic device of the cast buffer layer 'includes an electroluminescent device. According to another embodiment of the invention, there is provided a method of synthesizing polysulfimide with at least one colloid to form an aqueous dispersion of a polyacid. A method for producing a polydisperse and an aqueous dispersion of a colloid to form a polyacid comprises: U) providing a uniform aqueous mixture of water and p-cephen; (b) providing a colloid to form an aqueous dispersion of a polyacid; (c) combining the porphin mixture with the colloid-forming aqueous dispersion of the polyacid; and (d) the oxidizing agent and the catalyst and the colloid forming an aqueous dispersion of the polyacid in any order before or after the combining step (c) merge. Other specific embodiments are described in the embodiments of the invention. [Embodiment] In a specific embodiment of the invention, a composition comprising polysulfimide, comprising a polydioxythiophene and a colloid to form an aqueous dispersion of a polyacid, is provided. As used herein, the dispersion "-word is equivalent to a continuous liquid medium containing fine particle suspension. According to the invention, "continuous medium, generally an aqueous liquid, such as water. As used herein, the term "aqueous" corresponds to a liquid which is mostly water, and in one embodiment, at least about 40% by weight is water. liquid. As used herein, the "glue word is equivalent to a fine particle suspended in a continuous medium having a particle size of a micron size. As used herein, the term "colloidal &" is equivalent to a substance that forms fine particles when dispersed in an aqueous solution, that is, a colloidal shape 'ν, and the acid is not water-soluble. ♦ As used herein, "contains" , "contains,"includes","covers","presentation, """ or any other variation of the words it is intended to cover (4) / with '. S.

O:\88\88435.DOC -8 - 1327152 女’包含-系列'件之程序、方法、物件或設備不必只限 於這些s件,還包含其他未陳述列出或此程序、方法、物 件或設備固有之元件。此外,除非陳述表示相反,否則"或 ”係相當包含性的或,而非獨占性的或。例如,下列任一情 況皆可滿足條件八或8 : A為真(或存在)且8不為真(或不存 在)、A不為真(或不存在)AB為真(或存在)及八與8皆為真 (或皆存在)。 的使用你用於描述本發明元件及組件。這樣做 一為了方便並提供本發明一般概念。這描述應解讀為包含一 個或至’一個’單數也包含複數意義,除非明顯另有他意。 已發現噻吩單體,包括二氧噻吩單體在膠體形成聚酸的 存在下以化學方式聚合時,可製得導電聚嘍吩,特別是聚 (二氧嘍吩)之水性分散液。此外,已發現聚酸的使用可產生 具極佳電性質之組合物’其中該聚酸在製備聚嘆吩或聚(二 氧塞为)之水性分散液時是不溶於纟的。這些水性分散液 一=優點是導電細小粒子在水性媒介中是安定的,不因使 而形成分離相。…他們-旦乾燥成膜 根據一個木杯BH pi ., 一一:具體實施例之組合物包含-具有聚二氧O:\88\88435.DOC -8 - 1327152 The procedures, methods, objects or equipment of a female 'include-series' are not necessarily limited to these items, but also include other unrepresented or such procedures, methods, objects or equipment. Inherent components. In addition, unless stated to the contrary, " or" is fairly inclusive or not exclusive. For example, any of the following may satisfy condition eight or eight: A is true (or exists) and 8 is not True (or non-existent), A is not true (or non-existent) AB is true (or exists) and both 8 and 8 are true (or both). The use of the components you use to describe the components and components of the present invention. This description is to be construed as a convenience of the invention, and the description of the invention is intended to be construed as a singular or a singular singular and singular. When chemically polymerized in the presence of a polyacid, conductive polybenz, especially an aqueous dispersion of poly(dioxan), can be obtained. Furthermore, the use of polyacids has been found to produce a combination of excellent electrical properties. Where the polyacid is insoluble in the preparation of an aqueous dispersion of polystimulus or poly(dioxane). These aqueous dispersions have the advantage that the electrically conductive fine particles are stable in the aqueous medium, Forming points . They phase ... - Once dry film according to a wooden cup BH pi, eleven: Examples of specific embodiments compositions comprise - polydioxanone having

1327152 其中: 有1至4個碳原子之烷基 R,與R, ’係各獨立地選自氫及具 或MR,’-起形成具有個碳原子之伸㈣鏈,其可 視情況被I有1至12個碳原+之烧基或芳族基取代,或n 伸環己基,且 η係大於約6。 本發明噻吩具有與上面所提供相同之一般結構,其中心 與尺丨’係以"OR丨0"及"OR丨•,取代基代替。 ’ 在特定具體實施例中,R,與R!,一起形成具有i至4個碳原% 子之伸烷基鏈。在另一個具體實施例中,聚二氧嘍吩是聚 (3,4-伸乙二氧基嘧吩)。 欲用於本發明實施例之膠體形成聚酸係不溶於水,並且 分散於水性媒介中時會形成膠體。聚酸的分子量一般係在1327152 wherein: an alkyl group R having from 1 to 4 carbon atoms, and R, 'series are each independently selected from hydrogen and have or MR, forming a chain of four (four) chains having a carbon atom, which may optionally be 1 to 12 carbon atoms are substituted with an alkyl or an aromatic group, or n is a cyclohexyl group, and the η system is greater than about 6. The thiophene of the present invention has the same general structure as that provided above, and its center and size are replaced by "OR丨0" and "OR丨•, substituents. In a particular embodiment, R, together with R!, form an alkyl chain having from i to 4 carbon atoms. In another embodiment, the polydioxonole is poly(3,4-exoethylenedioxysulfonyl). The colloid-forming polyacid to be used in the examples of the present invention is insoluble in water and forms a colloid when dispersed in an aqueous medium. The molecular weight of the polyacid is generally

約10,000至約4,000,000之範圍内。在一個具體實施例中, 聚酸的分子量係約100,000至約2,000,000 »膠體的粒徑—般 係在2宅微米(nm)至約140¾微米之範圍内。在一個具體實 施例中,膠體的粒徑為2毫微米至約30毫微米。任何分散在 水中時可形成膠體之聚酸係適合用於本發明實施例中。在 一個具體實施例中,膠體形成聚酸是聚磺酸。其他可接受 的聚酸包括聚磷酸、聚羧酸及聚丙烯酸和其混合物,包括 含聚磺酸之混合物。在另一個具體實施例中,聚磺酸係經 氟化。在另一個具體實施例中,膠體形成聚磺酸係經全氟 化。在另一個具體實施例中,膠體形成聚磺酸是全氟伸烷 基磺酸。 0.\88\88435.DOC -10- 1327152 在另一個具體實施例中’膠體形成聚酸是—種高度氟化 的磺酸聚合物("FSA聚合物。"高度氟化"係指聚合物中至 少約5 0 %鹵素與氫原子之總數為氟原子,而且其在一個具 體實施例中是至少約75%,在另一個具體實施例中是至少 約90%。在一個具體實施例中’聚合物是經全氟化。”項酸 化官能基"一詞相當於續酸基或續酸基之鹽類,在一個具體 實施例中為驗金屬或銨鹽。該官能基可以式_s〇3X表示,其 中X是碳,也是已知的"抗衡離子"。X可為Η、Li、Na、K 或N(Ri)(R2)(R3)(R4),而且R〖、R2、尺3及尺4可為相同或不同, 在一個具體實施例中為Η、CH3或C2H5。在另—個具體實施 例中,X疋Η,在此例中,聚合物可謂呈"酸型,% X也可是 多價的,如以Ca++及Al+++之類的離子所表示的。熟諳此技 者清楚了解在多價抗衡離子,一般表示成Μη+之例子中,每 個抗衡離子的續酸化官能基數目將等於價數”η„。 在一個具體實施例中,FSA聚合物包含聚合物主幹及循 %側鏈連接至主幹上,其中該側鏈帶有陽離子交換基。聚 合物包括兩或多種單體之均聚物或共聚物。共聚物一般係 由非s月b單體與帶有陽離子交換基之第二單體或其前驅 物,如接著可水解成磺酸化官能基之磺醯氟基(s〇2F)。例 如可使用第-氟化乙稀基單體與具有續酿氟基(-犯⑺之 第氟化乙稀基單體一起形成的共聚物。可用的第一單體 已:四氟乙烯(TFE)、六氟丙烯、氟化乙烯、氟化亞乙烯、 - 乙烯、I二氣乙稀、全氣(烧乙稀基謎)及其組合。挪 是較佳第一單體。It is in the range of about 10,000 to about 4,000,000. In one embodiment, the molecular weight of the polyacid is from about 100,000 to about 2,000,000. The particle size of the colloid is generally in the range of from 2 house microns (nm) to about 1403. In a specific embodiment, the colloid has a particle size of from 2 nanometers to about 30 nanometers. Any polyacid which forms a colloid when dispersed in water is suitable for use in the examples of the present invention. In a particular embodiment, the colloid forming polyacid is a polysulfonic acid. Other acceptable polyacids include polyphosphoric acid, polycarboxylic acids, and polyacrylic acids and mixtures thereof, including mixtures containing polysulfonic acids. In another embodiment, the polysulfonic acid is fluorinated. In another embodiment, the colloid-forming polysulfonic acid is perfluorinated. In another embodiment, the colloid-forming polysulfonic acid is a perfluoroalkylalkylsulfonic acid. 0.\88\88435.DOC -10- 1327152 In another embodiment, the 'colloidal polyacid is a highly fluorinated sulfonic acid polymer ("FSA polymer."Highly fluorinated" It is meant that at least about 50% of the total number of halogen and hydrogen atoms in the polymer is a fluorine atom, and in one embodiment is at least about 75%, and in another embodiment at least about 90%. In one embodiment In the example, 'the polymer is perfluorinated. The term acidifying functional group" is equivalent to a salt of a repeating acid group or a reductive acid group, and in one embodiment is a metal or ammonium salt. The formula _s〇3X represents, where X is carbon, and is also known as "counter ion". X can be Η, Li, Na, K or N(Ri)(R2)(R3)(R4), and R 〖, R2, 尺3, and 尺4 may be the same or different, in one embodiment Η, CH3 or C2H5. In another specific embodiment, X疋Η, in this case, the polymer may be " Acid type, % X can also be multi-valent, as expressed by ions such as Ca++ and Al+++. Those skilled in this technology are well aware of the multivalent counter ion, one In the example indicated as Μη+, the number of acid-reducing functional groups per counterion will be equal to the valence "η". In a specific embodiment, the FSA polymer comprises a polymer backbone and a % side chain attached to the backbone, Wherein the side chain carries a cation exchange group. The polymer comprises a homopolymer or copolymer of two or more monomers. The copolymer is generally a non-s-cycle b monomer and a second monomer bearing a cation exchange group or a precursor, such as a sulfonium fluoride group (s〇2F) which can then be hydrolyzed to a sulfonating functional group. For example, a fluorinated vinyl monomer and a fluorinated B group having a fluorinated vinyl group (-(7) can be used. A copolymer formed by a dilute base monomer. The first monomer usable is: tetrafluoroethylene (TFE), hexafluoropropylene, fluorinated ethylene, vinylidene fluoride, - ethylene, I, ethylene dioxide, total gas ( Burning Ethylene Puzzle and its combination. Move is the preferred first monomer.

O:\88\88435.DOC 1327152 2其他具體實施例中’可用的第二單體包括具有續酸化 吕月匕基或可提供聚合物所需側鏈之前驅物基的氟化乙稀基 峻。1要時,可將附加單體,包括乙烯、丙晞及r-CH=CH2 #入运些聚合物中’其中R是1至10個碳原子之全氟化烷 基。此聚合物可能相當於本文之雜亂共聚物類型即藉共 單體之相對濃度儘可能保持固定,使單體單位沿著聚合物· 鏈之7刀布係依照其相對濃度及相對反應性之聚合作用所製 得的共聚物。也可使用藉改變單體在聚合作用期間之相對 濃度所製得雜亂度較低之共聚物。也可使用所謂嵌段共聚% 物類聖之承合物,如歐洲專利申請案第工m Ai號中所 揭 7]^。 ,一個具體實施例中,用於本發明之FSA聚合物包含高 度氟化,在一個具體實施例中為全氟化之碳主幹及下式所 示側鏈O:\88\88435.DOC 1327152 2 In other embodiments, the second monomer that is usable includes a fluorinated ethylene group having a reductive acid group or a pendant precursor group that provides a desired side of the polymer. When desired, additional monomers, including ethylene, propidium and r-CH=CH2 #, may be introduced into the polymer 'wherein R is a perfluorinated alkyl group of 1 to 10 carbon atoms. This polymer may be equivalent to the type of the chaotic copolymer herein, that is, the relative concentration of the comonomer is kept as fixed as possible, so that the monomer unit is polymerized along the 7-cutter system of the polymer chain according to its relative concentration and relative reactivity. The resulting copolymer is obtained. Copolymers having a lower degree of clutter can also be obtained by varying the relative concentrations of the monomers during the polymerization. It is also possible to use a so-called block copolymerization class of the sacrificial compound, as disclosed in European Patent Application No. m Ai. In one embodiment, the FSA polymer used in the present invention comprises a high degree of fluorination, in one embodiment a perfluorinated carbon backbone and a side chain as shown below

-(〇-CF2CFRf)a-〇-CF2CFR,fS〇3X 其中Rf與R,f係獨立地選自F、C1或具有丨至1〇個碳原子之 全氟化烷基,a=。、1或2,X是Η、Li ' Na、K或’ N〇U)(R2)(R3)(R4),而且R1、R2、们及以為相同或不同的,· 在一個具體實施财為H、CH3或CA。在另—個具體實施. 例中,X是Η。如上所陳述般,χ也可為多價的。 在一個具體實施例中,FSA聚合物包括,例如美國專利 第3,282,875號及美國專利第4,358,545號和第4,940,525號 中所揭示的聚合物。較佳FSA聚合物之實例包含全氣碳主 幹及下式所示側鍵-(〇-CF2CFRf)a-〇-CF2CFR, fS〇3X wherein Rf and R, f are independently selected from F, C1 or a perfluorinated alkyl group having from 丨 to 1 carbon atom, a =. , 1 or 2, X is Η, Li ' Na, K or 'N〇U)(R2)(R3)(R4), and R1, R2, and think the same or different, in a specific implementation H, CH3 or CA. In another specific implementation. In the example, X is Η. As stated above, χ can also be multivalent. In a specific embodiment, the FSA polymer includes, for example, the polymers disclosed in U.S. Patent No. 3,282,875 and U.S. Patent Nos. 4,358,545 and 4,940,525. Examples of preferred FSA polymers include a full gas carbon backbone and side bonds as shown in the following formula

0 \88\88435 OOC -12- 1327152 -o_cf2cf(cf3)-o-cf2cf2so3x 其中X係如上所定義般。此類型之FS A聚合物係揭示於美 國專利第3,282,875號中並可藉四氟乙烯(TFE)與全氟化乙 烯基醚CF2 = CF-0-CF2CF(CF3)-0-CF2CF2S02F,全氟(3,6-二 噁-4-曱基-7-辛烯磺醯氟)(PDMOF)共聚合,接著藉磺醯氟 基水解轉化成磺酸化基,必要時離子交換將其轉化成所需 離子態製得。美國專利第4,358,545號和第4,940,525號中所 揭示聚合物類型之實例具有側鏈-0-CF2CF2S03X,其中X的 定義如上。此聚合物可藉四氟乙烯(TFE)與全氟化乙烯基醚 CF2 = CF-0-CF2CF2S02F,全氟(3-噁-4-戊烯磺醯氟)(POPF) 共聚合,接著水解及必要時進一步離子交換製得。 用於本發明之FSA聚合物的離子交換比一般係小於約 33。在此應用中,"離子交換比”或nIXR"係定義為聚合物主 幹中碳原子相對於陽離子交換基之數目。對於特定應用, 必要時IXR可在小於約33之範圍内變化。在一個具體實施例 中,IXR為約3至約33,在另一個具體實施例中係約8至約23。 聚合物之陽離子交換容量經常以當量(EW)等詞表示。為 達此應用的目的,當量(EW)係定義為中和一當量氫氧化鈉 所需酸型聚合物的重量。在聚合物具有全氟碳主幹且側鏈 為-o-cf2cf(cf3)-o-cf2-cf2-so3h(或其鹽)之磺酸化聚合 物的例子中,對應IXR為約8至約23之當量範圍係約750 EW 至約1 500 EW。此聚合物之IXR與當量間的關係可利用下式 說明:50 1乂11+344=£\¥。雖然美國專利第4,358,545號和第 4,940,525號中所揭示之磺酸化聚合物,如具有側鏈 ΟΛ33诏S435 DOC -13 - 1327152 -0-CF2CF2S〇3H(或其鹽)之聚合物使用相同的範圍,但 因含有陽離子交換基之單體單位的分子量較低,因此當量 稍低。對於約8至約23之較佳IXR範圍,對應當量範圍為約 575 EW至約1325 EW。此聚合物之ixr與當量間之關係可利 用下式說明:50 IXR+178=EW。 FS A聚合物可被製成膠體水性分散液。他們也可呈溶於 其他媒介之分散液形態’其實例包括,但不限於醇、水溶 性醚,如四氫呋喃 '水溶性醚之混合物及其組合物。製造 分散液時,可使用酸型聚合物。美國專利第4,433,㈣號、% 第6,150,426號及W0 03/006537揭示製造水性醇分散液的方 法。分散液製成後,可利用技術中已知方法調整液體組合 物之濃度及分散。 膠體形成聚酸’包括FSA聚合物之水性分散液一般具有 儘可能小之粒徑及儘可能小之㈣,只要可形成安定膠體。 FSA聚合物之水性分散液可由商業公司購得如由E. h du0 \88\88435 OOC -12- 1327152 -o_cf2cf(cf3)-o-cf2cf2so3x where X is as defined above. This type of FS A polymer is disclosed in U.S. Patent No. 3,282,875 and may be based on tetrafluoroethylene (TFE) and perfluorinated vinyl ether CF2 = CF-0-CF2CF(CF3)-0-CF2CF2S02F, perfluoro( 3,6-dioxin-4-mercapto-7-octenesulfonylfluoro) (PDMOF) copolymerization, followed by hydrolysis of the sulfonyl fluoride group to a sulfonate group, which is converted to the desired ion by ion exchange if necessary State made. Examples of polymer types disclosed in U.S. Patent Nos. 4,358,545 and 4,940,525 have the side chain -0-CF2CF2S03X wherein X is as defined above. The polymer can be copolymerized with tetrafluoroethylene (TFE) and perfluorinated vinyl ether CF2 = CF-0-CF2CF2S02F, perfluoro(3-ox-4-pentenesulfonyl fluoride) (POPF), followed by hydrolysis and Further ion exchange is made if necessary. The ion exchange ratio of the FSA polymer used in the present invention is generally less than about 33. In this application, "ion exchange ratio" or nIXR" is defined as the number of carbon atoms relative to the cation exchange group in the polymer backbone. For a particular application, the IXR may vary within a range of less than about 33, if desired. In particular embodiments, the IXR is from about 3 to about 33, and in another embodiment from about 8 to about 23. The cation exchange capacity of the polymer is often expressed in terms of equivalents (EW). For purposes of this application, Equivalent (EW) is defined as the weight of the acid-type polymer required to neutralize one equivalent of sodium hydroxide. The polymer has a perfluorocarbon backbone and the side chain is -o-cf2cf(cf3)-o-cf2-cf2-so3h In the case of the sulfonated polymer of (or a salt thereof), the equivalent range of from about 8 to about 23 for the IXR is from about 750 EW to about 1 500 EW. The relationship between the IXR and the equivalent of the polymer can be as follows. The sulfonated polymer disclosed in U.S. Patent Nos. 4,358,545 and 4,940,525, such as having a side chain 诏33诏S435 DOC -13 - 1327152 -0-CF2CF2S〇3H ( The polymer of the salt or its salt) uses the same range, but contains a cation exchange group. The molecular weight of the monomer unit is lower, so the equivalent is slightly lower. For a preferred IXR range of from about 8 to about 23, the corresponding equivalent range is from about 575 EW to about 1325 EW. The relationship between the ixr and the equivalent of the polymer can be utilized. The following formula shows: 50 IXR + 178 = EW. FS A polymer can be made into a colloidal aqueous dispersion. They can also be in the form of a dispersion in other media. Examples include, but are not limited to, alcohols, water-soluble ethers, For example, a mixture of a tetrahydrofuran 'water-soluble ether and a composition thereof. An acid-type polymer can be used in the production of a dispersion. A method for producing an aqueous alcohol dispersion is disclosed in U.S. Patent Nos. 4,433, (4), 4,150,426 and WO 03/006537. After the dispersion is prepared, the concentration and dispersion of the liquid composition can be adjusted by methods known in the art. Colloid-forming polyacids The aqueous dispersions including FSA polymers generally have as small a particle size as possible and are as small as possible (4) As long as a stable colloid can be formed. The aqueous dispersion of FSA polymer can be purchased from commercial companies such as by E. h du

Pont de Nem〇UI^公司(戴樂維州懷明頓)構得之财_⑧分 散液。 膠塞吩或二氧•吩單體係在含聚酸 你人 化水合。一般,P塞吩或二氧噻吩單I# # :3有聚合觸媒、氧化劑及膠體聚酸 生 分散液合併或加入甘a 刀蚁八中之水性 或添加的順序,條:Γ在此具體實施例中,可改變合併 其中之_已準借為减劑與觸媒不與單體合併,直到 +備進行聚合反應。 承口觸媒包括,但不 双虱化鐵及類似物和其Pont de Nem〇UI^ (Dalerville, Wilmington) has a wealth of _8 points. The rubber plug or dioxophene system contains polyacids. In general, P phenophene or dioxythiophene mono I# #:3 has a polymerization catalyst, an oxidizing agent, and a colloidal polyacid raw dispersion, or a water-based or added order of adding a snail ant eight, In the embodiment, the merging may be changed as the reducing agent and the catalyst are not combined with the monomer until the polymerization is carried out. The socket catalyst includes, but does not, bismuth iron and the like and

O:\88\88435.DOC -14- 102/iyz 混合物。 T ^匕括但不限於過硫酸納、過硫酸鉀、過硫酸敍 及類似物’包括其*且八私 ,、、’且D物。氧化聚合形成一種包含正電荷 導電聚;塞吩及/或二氧嘍吩之安定水性分散液,其中該聚,塞 :及’或—乳嚜吩係藉膠體内所含聚酸的負電荷側鏈,例如 續酸化陰離子、錢化陰離子、乙醯化 離子、組合物絲㈣㈣荷平衡。 、個'、體只私例中,製造聚二氧嘍吩與至少一膠體形 成小i之水性分散液的方法係包括:⑷提供聚酸之水性分 散液;⑻將氧化劑加人步驟⑷之分散液;⑷將觸媒加入步 驟⑻之分散液;及⑷將二氧,塞吩單體加人步驟⑷之分散液 個上述方法之具體實施例包括在加入氧化劑之 刖’先將二氧禮吩單體加入聚酸之水性分散液中。另一個 具體實施例係產生任何水中聚氧嚙吩濃度值之水與聚二氧 噻吩的均勻水性混合物,其中聚氧嘍吩的濃度一般係在約 〇.5重量%至約2.〇重量%聚氧4吩之範圍内,並在加入氧化 d及觸媒之則,將此聚二氧噻吩混合物加入聚酸水性分散 液中。 聚合作用可在與水互溶之共分散液的存在下進行。適合 的共分散液實例包括,但不限於越、_、賴、環狀峻、 酮、腈、亞砜及其組合物。在一個具體實施例中,共分散 液的含量應低於30體積%。在一個具體實施例中,共分散 液的含量係低於60體積%。在一個具體實施例中,共分散 液的含量係介於5體積%與50體積%之間。在一個具體實施 O:\88\88435 DOC -15- 1327152 例中,共分散液是一種醇。在一個具體實施例中,共分散 液係選自正丙醇、異丙醇、第三丁醇、甲醇二曱基乙醯胺、 二曱基甲醯胺、N-甲基吡咯酮。該酸可是一種無機酸’如 HC1、硫酸及類似物,或有機酸,如對甲苯磺酸、十二基苯 磺酸、曱烷磺酸、三氟甲烷磺酸、樟腦磺酸、乙酸及類似 物。或者,該酸可為水溶性聚酸如聚(苯乙烯磺酸)、聚(2-丙烯醯胺-2-曱基-1-丙烷磺酸)或類似物,或上述第二膠體 形成酸。可使用這些酸之組合物。 加入氧化劑或嘧吩單體之前,無論何者最後加入,可在 程序中任何點將共酸加入反應混合物中。在一個具體實施 例中’共酸係在嘧吩單體與膠體形成聚酸之前加入並最後 加入氧化劑。在一個具體實施例中,共酸係在加入p塞吩單 體之前加入,接著加入膠體形成聚酸,最後加入氧化劑。 加入氧化劑、觸媒或單體之前,無論何者最後加入,可 在任何點將共分散液加入反應混合物中。 視情況而定,完成上述任何方法及聚合反應後,如此合 成得到之水性分散㈣、在適合製造^水性分散液的料 下與至少-離子交換樹脂接觸。在—個具體實施例中,如 此合成得収水性分散㈣與第—科交㈣脂及第 子交換樹脂接觸。 在另-個具體實施例中,第—離子交換樹脂是—種妒 ,雜%離子交換樹脂,如上料酸陽離子交換樹脂,文 ^子交換樹脂是-種驗性、陰離子交換樹脂,如: 或四級交換樹脂。 硬胺 〇'88\884J5.doc -J6- 離子交衫-種可逆化學反應,其中流體媒介(如水性分 散幻中的離子係與連結在固定固體粒子上之類似電荷離 ,乂換其中固疋固體粒子係不溶於流體媒介中。本文所 2離子乂換樹月曰’ 一詞係相當於所有此類物質。由於離子 父換基所連結之聚合支撐物的交聯性質使樹脂不溶。離子 十交換樹脂係分成具有可交換正電荷之移動離子的酸性、陽 十子又換月丨及可父換離子是負電荷的鹼性、陰離子交換劑。 酸性、陽離子交換樹脂及驗性、陰離子交換樹脂係欲用 於本發明實施例中。在—個具體實施例中,酸性、陽離子 交換樹脂是—種有機酸、陽離子交換樹脂,如磺酸陽離子 交換樹脂。欲用於本發明實施例之續酸陽離子交換樹脂係 包括’例如磧酸化笨乙稀_二乙烯基苯共聚物、續酸化交聯 f乙烯聚合物、酚-甲醛-磺酸樹脂 '苯-甲醛-磺酸樹脂及其 混合物。在另-個具體實施例中,酸性、陽離子交換樹脂 是一種有機酸、陽離子交換樹脂,如羧酸、丙烯酸或磷酸 陽離子交換樹脂。而且,可使料同陽離子交換樹脂之混 5物在°午夕例子中’鹼性離子交換樹脂可用於調整pH至 所需值。在某些例子中’可以水性鹼性溶液如氫氧化鈉、 氫氧化叙氫氧化四甲基敍或類似溶液進一步調整pH。 在另一個具體實施例中,鹼性、陰離子交換樹脂是一種 二級胺陰離子交換樹脂。欲用於本發明實施例之三級胺陰 離子交換樹脂包括,例如三級胺化笨乙烯-二乙烯基苯共聚 物、二級胺化交聯苯乙烯聚合物、三級胺化酚甲醛樹脂、 三級胺化苯_甲醛樹脂及其混合物。在另一個具體實施例O:\88\88435.DOC -14- 102/iyz mixture. T ^ includes but is not limited to sodium persulfate, potassium persulfate, persulfate, and the like 'including its * and eight private, , and ' and D. Oxidative polymerization to form a stable aqueous dispersion comprising a positively charged conductive poly; phenanthrene and/or dioxin, wherein the poly, plug: and / or - chylotropes are based on the negative charge side of the polyacid contained in the colloid Chains, such as acidified anions, molybdenum anions, acetylated ions, composition filaments (4) (iv) load balance. The method for producing an aqueous dispersion of polydioxan and at least one colloid to form a small i, includes: (4) providing an aqueous dispersion of a polyacid; and (8) dispersing the oxidizing agent in the step (4). (4) adding the catalyst to the dispersion of the step (8); and (4) adding the dioxane, the phenanthrene monomer to the dispersion of the step (4), and the specific embodiment of the above method includes adding the oxidizing agent to the oxidizing agent. The monomer is added to the aqueous dispersion of the polyacid. Another embodiment is a homogeneous aqueous mixture of water and polydioxythiophene which produces a polyoxygen octaphene concentration value in water, wherein the concentration of polyoxy porphin is generally from about 5% by weight to about 2.% by weight. The polydioxythiophene mixture is added to the aqueous polyacid dispersion in the range of polyoxytetraphenone and in the presence of oxidation d and a catalyst. The polymerization can be carried out in the presence of a water-miscible co-dispersion. Examples of suitable co-dispersion solutions include, but are not limited to, acetonide, lysine, cyclic ketone, ketone, nitrile, sulfoxide, and combinations thereof. In a particular embodiment, the amount of co-dispersion should be less than 30% by volume. In a specific embodiment, the content of the co-dispersion is less than 60% by volume. In a particular embodiment, the co-dispersion is present in an amount between 5 vol% and 50 vol%. In one embodiment, O:\88\88435 DOC -15- 1327152, the co-dispersion is an alcohol. In a particular embodiment, the co-dispersion is selected from the group consisting of n-propanol, isopropanol, tert-butanol, methanol dimercaptoacetamide, dimercaptocaramine, N-methylpyrrolidone. The acid may be an inorganic acid such as HCl, sulfuric acid and the like, or an organic acid such as p-toluenesulfonic acid, dodecylbenzenesulfonic acid, decanesulfonic acid, trifluoromethanesulfonic acid, camphorsulfonic acid, acetic acid and the like. Things. Alternatively, the acid may be a water-soluble polyacid such as poly(styrenesulfonic acid), poly(2-propenylamine-2-mercapto-1-propanesulfonic acid) or the like, or the above second colloid forming acid. Combinations of these acids can be used. The co-acid can be added to the reaction mixture at any point in the procedure, prior to the addition of the oxidizing agent or the thiophene monomer. In one embodiment, the co-acid is added prior to the formation of the polyacid by the thiophene monomer and the colloid and the oxidizing agent is finally added. In a particular embodiment, the co-acid is added prior to the addition of the p-cetin monomer, followed by the addition of a colloid to form a polyacid, and finally the addition of an oxidizing agent. The co-dispersion can be added to the reaction mixture at any point prior to the addition of the oxidizing agent, catalyst or monomer, whatever is added last. Depending on the case, after completion of any of the above methods and polymerization, the aqueous dispersion (4) thus obtained is contacted with at least the ion exchange resin under a material suitable for the production of the aqueous dispersion. In a specific embodiment, the resultant aqueous dispersion (4) is contacted with the first-core (four) fat and the first exchange resin. In another embodiment, the first ion exchange resin is a hydrazine, a heteropoly ion exchange resin, such as an acid cation exchange resin, and the ionic exchange resin is an anionic, anion exchange resin such as: or Four-stage exchange resin. Hard amine 〇 '88\884J5.doc -J6- ion exchange shirt - a reversible chemical reaction, in which the fluid medium (such as the aqueous dispersion of the ionic system and the similar charge attached to the fixed solid particles, 乂 change the solid The solid particles are insoluble in the fluid medium. The term “ion 乂 树 曰 曰 本文 本文 本文 相当于 相当于 相当于 相当于 相当于 相当于 相当于 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一 一The exchange resin is divided into an alkaline, anion exchanger which is acidic, a cation, and a negative ion which have a positively charged mobile ion. Acidic, cation exchange resin and anion exchange resin It is intended to be used in the embodiments of the present invention. In a specific embodiment, the acidic, cation exchange resin is an organic acid, a cation exchange resin, such as a sulfonic acid cation exchange resin, which is to be used in the embodiment of the present invention. The cation exchange resin system includes, for example, a decanoic acid-divinylbenzene copolymer, a acidified crosslinked f-ethylene polymer, a phenol-formaldehyde-sulfonic acid resin, a benzene-formaldehyde-sulfonic acid. Resin and mixtures thereof. In another embodiment, the acidic, cation exchange resin is an organic acid, a cation exchange resin such as a carboxylic acid, acrylic acid or phosphoric acid cation exchange resin. Moreover, the mixture can be mixed with a cation exchange resin. 5 in the midnight example of the 'Alkaline ion exchange resin can be used to adjust the pH to the desired value. In some cases, 'aqueous alkaline solution such as sodium hydroxide, hydrazine hydroxide tetramethyl or similar The solution is further adjusted in pH. In another embodiment, the basic, anion exchange resin is a secondary amine anion exchange resin. The tertiary amine anion exchange resin to be used in the examples of the present invention includes, for example, tertiary amination. Ethylene-divinylbenzene copolymer, secondary aminated crosslinked styrene polymer, tertiary aminated phenol formaldehyde resin, tertiary aminated benzene-formaldehyde resin, and mixtures thereof. In another embodiment

0\88\8843S.DOC -17- 1327152 中’鹼性、陰離子夺拖姑+ t a 卞又換树月日疋一種四級胺陰離子交換樹脂 或這些及其他交換樹脂之混合物。 、 第-及第二離子交換樹脂可同時或依序與如此合成得到 之水性分散液接觸。例如,在一個具體實施例中,可將兩 樹脂同時加入如此合成得到之導電聚合物水性分散液中並 使其與分散液保持接觸至少約丨小時,如約2小時至約2 〇小 時。然後藉由過濾從分散液中除去離子交換樹脂。過遽器 的尺寸係經過選擇使相當大的離子交換樹脂粒子被除去, 而較小分散液粒子可通過。不希望受理論限制,相信離子f 交換樹脂可終止聚合作用並有效地從如此合成得到之水性 分散液中除去離子及非離子不純物和大部分未反應單體。 此外,鹼性、陰離子交換及/或酸性、陽離子交換樹脂使酸 I·生位置更鹼,使分散液的pH提高。一般,每約1克膠體形成 聚酸係使用至少丨克離子交換劑。在另一個具體實施例_, 所用離子交換樹脂之使用比例為每克聚噻吩/聚酸膠體高 達約5克離子交換樹脂並視欲達到之?11而定。在一個具體實 施例中,每克聚二氧噻吩與至少一膠體形成聚酸之組合物 係使用約1克LeWatit®MP62 WS,一種購自Bayer GmbH之弱· 驗陰離子交換樹脂及約1克Lewatit®MonoPlus S 100,一種 · 購自Bayer GmbH之強酸、鈉陽離子交換樹脂。 在一個具體實施例中,先將由二氧B塞吩與氟化聚磺酸膠 體聚合所形成之水性分散液與氟化聚合物之水性分散液裝 入反應容器中。對此依序加入氧化劑、觸媒及二氧喧吩單 體’或依序加入一氧p塞吩單體、氧化劑及觸媒。搜拌浪合 O:\88\S8435 DOC 18 1327152 物,然後令反應在受控溫度下進行。聚合作用完成時,以 強s文陽離子樹脂及鹼性陰離子交換樹脂終止反應'攪拌及 過濾之。或者,在加入Naflon⑧分散液之前,先將二氧噻吩 加:水中亚攪拌以均勻化混合物,接著加入氧化劑及觸媒 檀拌。氧化劑:單體比—般係在〇 5至2 ()範圍内。氟化聚合 物:二氧噻吩單體比一般係在1至4範圍内。總固體含量一 般係在1.5%至6%範圍内,在__個具體實施例中為以至 冬5%。反應溫度一般係在5。(:至5〇。(:範圍内,在一個具體實 她例中為20 C至35 C。反應時間一般係在!至3〇小時範圍 内。 如此合成得到之聚嘍吩聚酸膠體,包括聚二氧嘍吩與氯 化聚磺酸膠體之水性分散液具有寬廣的pH範圍並一般可調 整至約1與約8之間,一般具有約3-4之pH。經常希望具有較 阿PH,因為酸性可能造成腐钮。已發現可利用已知技術, 例如離子交換或以驗性水溶液滴定調整pH。已形成pH高達 7-8之聚二氧4吩與氣化聚續酸膠體之安^分散液。聚P塞吩 ,、,、他膠體形成聚酸之水性分散液可以類似處理調整pH。 在另一個具體實施例中,藉將高度導電添加劑加入聚二 氧喧吩與膠體形成聚酸之水性分散液中可形成導電性更: 的刀散液。因為可形成帅當高之分散液,因此導電添加 劑,特別是金屬添加劑不受分散液之酸攻擊。再者,因為 聚酸是膠體性質,且Φ亜4人缺且> 士 ’’’’ , 具主要包含酸基之表面,因此導電聚嘍 吩:形成於膠體表面上。因為此獨特結構,因此只需要低 重量百分比之高度導電添加劑就可達到參濾閎限。適合的0\88\8843S.DOC -17- 1327152 'Alkal, anion, sputum + t a 卞 and sapphire, a quaternary amine anion exchange resin or a mixture of these and other exchange resins. The first and second ion exchange resins may be contacted simultaneously or sequentially with the aqueous dispersion thus synthesized. For example, in one embodiment, the two resins may be simultaneously added to the aqueous dispersion of the conductive polymer thus synthesized and kept in contact with the dispersion for at least about several hours, such as from about 2 hours to about 2 seconds. The ion exchange resin is then removed from the dispersion by filtration. The size of the filter is selected such that relatively large ion exchange resin particles are removed and smaller dispersion particles are passed through. Without wishing to be bound by theory, it is believed that the ionic f-exchange resin terminates the polymerization and effectively removes ionic and non-ionic impurities and most of the unreacted monomers from the aqueous dispersion thus synthesized. Further, the basic, anion exchange, and/or acid and cation exchange resins cause the acid I to be more alkaline and increase the pH of the dispersion. Typically, at least one gram of colloid is formed into a polyacid system using at least a gram ion exchanger. In another embodiment, the ion exchange resin used is used in an amount of up to about 5 grams of ion exchange resin per gram of polythiophene/polyacid colloid and is desired to be achieved. 11 depending on. In a specific embodiment, the composition of polyacids per gram of polydioxythiophene and at least one colloid forms about 1 gram of LeWatit® MP62 WS, a weak anion exchange resin available from Bayer GmbH and about 1 gram of Lewatit. ® MonoPlus S 100, a strong acid, sodium cation exchange resin from Bayer GmbH. In a specific embodiment, an aqueous dispersion formed by polymerizing a mixture of dioxane B and fluorinated polysulfonic acid and an aqueous dispersion of a fluorinated polymer are first charged into a reaction vessel. To this, an oxidizing agent, a catalyst, and a dioxin monomer are sequentially added or a mono-oxy-p-thiophene monomer, an oxidizing agent, and a catalyst are sequentially added. Search for a mixture of O:\88\S8435 DOC 18 1327152 and then allow the reaction to proceed at a controlled temperature. When the polymerization is completed, the reaction is terminated by stirring with a strong s-cationic resin and a basic anion exchange resin. Alternatively, prior to the addition of the Naflon 8 dispersion, dioxetane is added: the water is sub-stirred to homogenize the mixture, followed by the addition of the oxidizing agent and the catalyst sandpaper. Oxidizer: The monomer ratio is generally in the range of 〇 5 to 2 (). The fluorinated polymer: the dioxythiophene monomer is generally in the range of 1 to 4. The total solids content is generally in the range of 1.5% to 6%, and in the particular embodiment is 5% in winter. The reaction temperature is generally at 5. (: to 5 〇. (: In the range, in a specific example, it is 20 C to 35 C. The reaction time is generally in the range of ! to 3 hr. The polymorphic polyacid colloid thus synthesized, including Aqueous dispersions of polydioxime and chlorinated polysulfonic acid colloids have a broad pH range and are generally adjustable to between about 1 and about 8, typically having a pH of about 3-4. It is often desirable to have a lower pH, Since acidity may cause corrosion of the button, it has been found that the pH can be adjusted by known techniques such as ion exchange or titration with an aqueous solution. The formation of a polydioxane and a gasified polyacid colloid having a pH of 7-8 has been formed. The dispersion, the poly-P-phene, and the colloid-forming aqueous dispersion of the polyacid can be similarly treated to adjust the pH. In another embodiment, a highly conductive additive is added to the polydioxan and the colloid to form a polyacid. In the aqueous dispersion, a conductive liquid can be formed: because the dispersion can be formed, the conductive additive, especially the metal additive, is not attacked by the acid of the dispersion. Furthermore, since the polyacid is a colloid Nature, and Φ亜4 people are missing and> '' '', Comprising a main surface having an acid group, the poly woven conductive polythiophene so: as formed on the surface of the colloidal this unique structure, thus requiring only a low weight percentage of highly conductive additives, can reach a suitable reference filter Hong limit.

O:\88\8W35 DOC 1327152 導電添加劑實例包括,但不限於金屬粒子及奈米粒子、奈 米線、碳奈米管、石墨纖維或粒子、碳粒及其組合物。 在另一個本發明具體實施例中,提供由包含聚噻吩與膠 體形成聚酸,包括以聚二氧噹吩與膠體形成聚酸當作一個 具體實施例之水性分散液澆鑄而成的緩衝層。在一個具體 貫施例中,緩衝層係由包含膠體形成聚磺酸之水性分散液. 澆鑄而成的。在一個具體實施例中,緩衝層係由包含聚(伸· 烷二氧基嘧吩)與氟化聚酸膠體之水性分散液澆鑄而成 的。在另-個具體實施例中,氟化聚酸膠體是氟化聚續酸 膠體°在另-個具體實施例中,緩衝層係由包含聚(M伸 乙二氧基噻吩)與全氟乙烯磺酸膠體之水性分散液澆鑄而 成的。 聚嘍吩,包括聚二氧噻吩與聚酸膠體,如氟化聚磺酸膠 體之乾膜一般不會再分散於水中。因此緩衝層可塗佈成多. 重薄層。而且’緩衝層可被—層不同水溶性或水可分散性 材料覆蓋而無損傷。 在另一個具體實施例中,提供由包含聚嘍吩,包括聚二· 乳噻吩與膠體形成聚酸並摻合其他水溶性或水可分散材科-=水性分散錢鑄而成的緩衝層。視材料之最終應用而. 疋,可加入附加水溶性或水可分散性材料類型之實例包 括’但不限於聚合物、染料、塗佈助冑、碳奈米管、奈米 線'有機及無機導電墨水及糊狀物、電荷傳遞材料、交聯 劑及其組合物。此材料可為簡單分子或聚合物。適合的其 他水溶性或水可分散聚合物的實例包括,但不限於導電聚O:\88\8W35 DOC 1327152 Examples of conductive additives include, but are not limited to, metal particles and nanoparticles, nanowires, carbon nanotubes, graphite fibers or particles, carbon particles, and combinations thereof. In another embodiment of the invention, there is provided a buffer layer formed by forming a polyacid comprising a polythiophene and a colloid, including a polydioxy phenanthrene and a colloid forming polyacid as an aqueous dispersion of a specific embodiment. In a specific embodiment, the buffer layer is cast from an aqueous dispersion comprising a colloid to form a polysulfonic acid. In a specific embodiment, the buffer layer is cast from an aqueous dispersion comprising a poly(alkylene dioxymethane) and a fluorinated polyacid colloid. In another embodiment, the fluorinated polyacid colloid is a fluorinated polyacid colloid. In another embodiment, the buffer layer comprises poly(M-ethylenedioxythiophene) and perfluoroethylene. An aqueous dispersion of a sulfonic acid colloid is cast. Polyporphins, including polydioxythiophenes and polyacid colloids, such as dry films of fluorinated polysulfonic acid colloids, are generally not redispersed in water. Therefore, the buffer layer can be coated into a plurality of layers. Moreover, the buffer layer can be covered by a layer of different water-soluble or water-dispersible materials without damage. In another embodiment, a buffer layer is provided that is formed from a polyporide comprising a polydithiolactide and a colloid to form a polyacid and blended with other water soluble or water dispersible materials - = aqueous dispersion. Depending on the final application of the material. 疋, examples of additional types of water-soluble or water-dispersible materials may be added, including but not limited to polymers, dyes, coated auxiliaries, carbon nanotubes, nanowires, organic and inorganic Conductive inks and pastes, charge transport materials, crosslinkers, and combinations thereof. This material can be a simple molecule or a polymer. Examples of suitable other water soluble or water dispersible polymers include, but are not limited to, conductive poly

0、88\88435 00C -20- 合物如聚喧吩、聚苯胺、聚胺、聚,比,各、&乙快及其組合 物。 在另一個本發明具體實施例中,提供兩電接觸層之間置 ?電’舌性層(通常為半導電共概聚合物)之電子裝 '、中至y裝置層包含本發明緩衝層。一個本發明具 肢實施例係說明於一種如圖}所示類型之裝置中,其 是一種具有陽極層110 '緩衝層120、電致發光層130及陰極 層150之裝置。鄰接陰極層15〇的是選用電子注入/傳遞層’ mo。介於緩衝層120與陰極層150(或選用冑子注入/傳遞層· WO)之間的是電致發光層13〇。 °亥凌置可包含支撐物或基板(未顯示出),其可鄰接陽極層 110或陰極層150。最頻繁地是支撐物鄰接陽極層11〇。支撐 物可為撓曲或剛性、有機或無機。一般,玻璃或挽曲有機 膜可用作支撐物。陽極層11〇是一種相較於陰極層150可更 有效地注入電洞之電極。陽極可包括含金屬、混合金屬、 合金、金屬氧化物或混合氧化物之材料。適合的材料包括 第2族元素(即Be、Mg、Ca、Sr、Ba、Ra)、第"族元素、 第4、5及6族之元素和第8_1〇族過渡金屬元素之混合氧化· 物。若陽極11〇是可穿透光的,可使用第12、13及14族元素· 之混合氧化物,如氧化銦錫。如本文所用”混合氧化物,,片 語係相當於具有兩或多種選自第2族元素或第12、13或14族 元素之不同陽離子的氧化物。陽極層丨1〇材料之部分非限定 特殊實例包括,但不限於氧化銦錫("IT〇")、氧化鋁錫金、 銀、銅及鎳。陽極也可包含有機材料如聚苯胺或聚吡咯。 〇.\88^8435 OOC -2i * 1327152 徹底使用IUPAC命名系統,其將週期表之族群由左至右命 為1-18(CRC化學與物理手冊,第81版,2〇〇〇年)。 陽極層110可藉化學或物理氣相沈積程序或旋轉澆鑄程 序形成。化學氣相沈積可以電漿辅助化學氣相沈積 (”PECVD")或金屬有機化學氣相沈積("M〇CVD")進行。物 理氣相沈積可包括所有類型之濺鍍,包括離子束濺鍍以及 e-束崧鍍及熱阻洛鍍。特殊類型之物理氣相沈積包括^磁控0, 88\88435 00C -20- Complexes such as polybenzazole, polyaniline, polyamine, poly, ratio, each, & fast and combinations thereof. In another embodiment of the invention, an electronic device, a medium to y device layer, is provided between the two electrical contact layers to provide an electrical layer of the tongue (usually a semiconductive common polymer) comprising a buffer layer of the invention. An embodiment of the present invention is illustrated in a device of the type illustrated in Figure} which is a device having an anode layer 110' buffer layer 120, an electroluminescent layer 130 and a cathode layer 150. Adjacent to the cathode layer 15 is an electron injecting/transporting layer 'mo. Between the buffer layer 120 and the cathode layer 150 (or the scorpion injection/transport layer WO) is the electroluminescent layer 13A. The gaze may comprise a support or substrate (not shown) that may abut the anode layer 110 or the cathode layer 150. Most often the support abuts the anode layer 11〇. The support can be flexible or rigid, organic or inorganic. Generally, a glass or a copper-coated organic film can be used as a support. The anode layer 11A is an electrode which can be injected into the hole more efficiently than the cathode layer 150. The anode may comprise a material comprising a metal, a mixed metal, an alloy, a metal oxide or a mixed oxide. Suitable materials include mixed oxidation of Group 2 elements (ie, Be, Mg, Ca, Sr, Ba, Ra), Group " family elements, elements of Groups 4, 5 and 6 and Group 8_1 Group transition metal elements. Things. If the anode 11 is permeable to light, a mixed oxide of elements of Groups 12, 13 and 14 may be used, such as indium tin oxide. As used herein, "mixed oxide, sheet language is equivalent to an oxide having two or more different cations selected from Group 2 elements or Group 12, 13 or 14 elements. Part of the anode layer 〇 1 〇 material is not limited Specific examples include, but are not limited to, indium tin oxide ("IT〇"), alumina tin gold, silver, copper, and nickel. The anode may also contain organic materials such as polyaniline or polypyrrole. 〇.\88^8435 OOC - 2i * 1327152 Thoroughly use the IUPAC nomenclature system, which groups the population of the periodic table from left to right 1-18 (CRC Handbook of Chemistry and Physics, 81st edition, 2 years). The anode layer 110 can be chemically or physically Formed by a vapor deposition process or a spin casting process. Chemical vapor deposition can be performed by plasma assisted chemical vapor deposition ("PECVD") or metal organic chemical vapor deposition ("M〇CVD"). Physical vapor deposition can include all types of sputtering, including ion beam sputtering and e-beam plating and thermal blocking. Special types of physical vapor deposition including ^ magnetron

濺鍍及誘導耦合電漿物理氣相沈積(”IMp_pvD")。這些沈積 技術在半導電製造技術領域中係為人所熟知的。Sputtering and inductively coupled plasma physical vapor deposition ("IMp_pvD"). These deposition techniques are well known in the art of semiconducting fabrication.

陽極層110可在微影蝕刻操作期間圖案化。該圖案可隨需 要改變。這些層可在塗佈第一電接觸層材料之前藉由,例 如將圖案《罩或阻劑放在第—撓曲複合障蔽結構物上以圖 案形態形成。或者,將這些層塗佈成整體層(所謂全面沈 積),接著利用,例如圖案阻劑層及溼化學或乾蝕刻技術圖 案化之。也可使用其他技術領域熟知之圖案化程序。當電 子裝置係位於一陣列内時,陽極層η〇 一般形成實質上平行 的長條,而此長條的長度實質上係沿相同方向延伸。 緩衝層120通常係利用各種熟諳此技者熟知技術澆麵 基板上。典型澆鑄技術包括,例如溶液澆鑄、液滴澆麵 淋幕淹鑄、旋轉塗佈、絲網印刷、喷墨印刷及類似技術 或者’緩衝層可制許多沈積程序,如喷墨印刷圖案化4 電致發光(EL)層130一般是共輕聚合物,如聚(對苯 炔)’縮寫為PPV或W。所選特定材料可視特定應用、 作期間所用電位或其他因素而定。包含電致發光有機材 O:\8S\88435 D〇c •22- 1327152 之EL層1 30可由溶液藉任何慣用技術,包括旋轉塗佈、澆鑄 及印刷進行塗佈。視材料性質而定,EL有機材料可藉氣相 沈積程序直接塗佈。在另一個具體實施例中,塗佈EL聚合 物前驅物,然後一般藉熱或其他外加能源(如可見光或uv 輻射)將其轉化成聚合物。 選用層140可用於幫助電子注入/傳遞並也可作為限域層 以防止層界面終止反應。更特別地,若層13〇與15〇將另外 直接接觸,層140可促進電子移動性並降低終止反應的可能 性。選用層140材料之實例包括,但不限於金屬螯合類奥辛 (oxinoid)化合物(如Alqs或類似物);啡啉基質化合物(如2,9_ 二曱基-4,7-二苯基-1,1〇_啡啉("DDPA”)、4,7 二苯基— no· 啡啉("DPA")或類似物);唑化合物(如2_(4_聯苯基)_5 — (4_第 一 丁本基)-1,3,4-°惡一 σ坐("PBD"或類似物)、3-(4-聯笨基)_心 笨基-5-(4-第三丁苯4-三唑("TAZ"或類似物);其他類 似化合物;或任何其一或多種之組合物。或者,選用層14〇 是無機物並包含仏〇、LiF、Li20或類似物。 陰極層150是一種對注入電子或負電荷载體特別有效的 電極。陰極層15〇可為任何工作函數低於第一電接觸層(在 例子中為陽極層11〇)之金屬或非金屬。如本文所用"較低工 作函數”一詞係欲指工作函數不大於約4.4 eV之材料。如本 文所用’’較高工作函數"係欲指工作函數至少近4.4 ev之材 料。 陰極層之材料可選自第1族之鹼金屬(如L!、Na、K、Rb、 Cs)第2知金屬(如Mg、Ca、Ba或類似物)、第12族金屬、The anode layer 110 can be patterned during a photolithographic etching operation. This pattern can be changed as needed. These layers may be formed in a patterned form prior to application of the first electrical contact layer material by, for example, placing a pattern "mask or resist" on the first flexural composite barrier structure. Alternatively, the layers are applied as a monolithic layer (so-called full deposition) and then patterned using, for example, a patterned resist layer and a wet chemical or dry etch technique. Patterning programs well known in the art can also be used. When the electronic devices are in an array, the anode layer η〇 generally forms substantially parallel strips, and the length of the strips extends substantially in the same direction. Buffer layer 120 is typically deposited on a substrate using a variety of techniques well known to those skilled in the art. Typical casting techniques include, for example, solution casting, drop casting, flood coating, screen printing, inkjet printing, and the like or 'buffer layers can be used to make many deposition processes, such as inkjet printing. The electroluminescent (EL) layer 130 is typically a co-light polymer such as poly(p-phenylene)' abbreviated as PPV or W. The particular material selected may depend on the particular application, the potential used during the process, or other factors. The EL layer 1 30 comprising the electroluminescent organic material O:\8S\88435 D〇c • 22-1327152 can be applied by solution by any conventional technique including spin coating, casting and printing. Depending on the nature of the material, the EL organic material can be directly coated by a vapor deposition process. In another embodiment, the EL polymer precursor is coated and then typically converted to a polymer by heat or other applied energy source such as visible light or uv radiation. Layer 140 may be selected to aid electron injection/transfer and may also serve as a confinement layer to prevent the layer interface from terminating the reaction. More specifically, if layers 13 and 15 are otherwise in direct contact, layer 140 promotes electron mobility and reduces the likelihood of termination of the reaction. Examples of materials for layer 140 include, but are not limited to, metal chelating oxinoid compounds (such as Alqs or the like); morphine matrix compounds (such as 2,9-dimercapto-4,7-diphenyl-) 1,1 〇 morpholine ("DDPA"), 4,7 diphenyl-no- phenanthroline ("DPA") or the like; azole compound (such as 2_(4_biphenyl)_5 — (4_First Dingben)-1,3,4-° Evil-sigma sitting ("PBD" or the like), 3-(4-linked base)_心笨基-5-(4-third Butylbenzene 4-triazole ("TAZ" or the like); other similar compounds; or any combination of one or more thereof. Alternatively, the layer 14 is an inorganic material and contains ruthenium, LiF, Li20 or the like. Cathode layer 150 is an electrode that is particularly effective for injecting electrons or negatively charge carriers. Cathode layer 15 can be any metal or non-metal having a lower working function than the first electrical contact layer (in the example, anode layer 11A). The term "lower working function" as used herein refers to a material whose working function is not greater than approximately 4.4 eV. As used herein, ''higher working function' is intended to refer to a working function. Less than 4.4 ev of material. The material of the cathode layer may be selected from the alkali metal of Group 1 (such as L!, Na, K, Rb, Cs), the second known metal (such as Mg, Ca, Ba or the like), Group 12 metal,

O:\88\88435.DOC -23 - 1327152 鑭系(如Ce、Sm、Eu或類似物)和婀系(如Th、u或類似物)。 也可使用如鋁、銦、釔及其組合物之材料。陰極層ΐ5〇材料 之特殊非限定實例包括,但不限於鋇、鋰、鈽 '鉋、銪、 铷、釔、鎂、釤及其合金和組合物。 陰極層1 5 0通常係藉化學或物理氣相沈積程序形成。一 舨,陰極層將如上有關陽極層1丨〇之討論般圖案化。若裝置 係放置在一陣列内,陰極層i 5〇可被圖案化成實質上平行的 長條’其中陰極層長條的長度實質上係沿相同方向延伸並 實質上垂直於陽極層長條的長度。稱為像素之電子元件係 形成於交又點上(由平面或俯視觀看此列陣時,陽極層長條 與陰極層長條相交於此p " 在其他具體實施例中,附加層可存在於有機電子裝置 内。例如,緩衝層120與虹層130間之層(未顯示出)可幫助 正電荷傳遞’能帶間隙配合各層,作為保護層或類似物。 同樣地,EL層130與陰極層150間之附加層(未顯示出)可幫 助負電荷傳遞,能帶間隙配合其間各層,作為保護層或類 似物。可使用技術中已知各層。而且,任何上述層可由兩 或多層製&。或者’部分或所有無機陽極層⑽、緩衝層 跡此層⑴及陰極層胸經表面處理以增加電荷載體^ 遞效率。各組件層之㈣選射由提供高裝置效率之農置 的目的與製造成本、製造複雜性或其他可能因素間之^衡 決定。 不同層可具有任何適合厚度。無機陽極層㈣通常不大 近500毫微米,例如近1G_2GG毫微米;緩衝層12〇通常不O:\88\88435.DOC -23 - 1327152 Lanthanide (such as Ce, Sm, Eu or the like) and lanthanide (such as Th, u or the like). Materials such as aluminum, indium, antimony, and combinations thereof can also be used. Specific non-limiting examples of cathode layer materials include, but are not limited to, ruthenium, lithium, osmium, ruthenium, osmium, iridium, magnesium, osmium, and alloys and compositions thereof. The cathode layer 150 is typically formed by a chemical or physical vapor deposition process. At one point, the cathode layer will be patterned as discussed above for the anode layer. If the device is placed in an array, the cathode layer i 5 can be patterned into substantially parallel strips 'where the length of the cathode layer strips is substantially extending in the same direction and substantially perpendicular to the length of the anode layer strips . An electronic component called a pixel is formed at the intersection point (the anode layer strip intersects the cathode layer strip at this point when viewed from a plane or a plan view). In other embodiments, an additional layer may exist. In an organic electronic device, for example, a layer (not shown) between the buffer layer 120 and the rainbow layer 130 can help the positive charge transfer 'band gap fit each layer as a protective layer or the like. Similarly, the EL layer 130 and the cathode Additional layers (not shown) between layers 150 may aid in the transfer of negative charges, with gaps in between, as a protective layer or the like. The layers known in the art may be used. Moreover, any of the above layers may be made of two or more layers. Or 'partial or all inorganic anode layer (10), buffer layer trace (1) and cathode layer thoracic surface treatment to increase the charge carrier transfer efficiency. (4) Selection of each component layer by the purpose of providing high plant efficiency The trade-off between manufacturing cost, manufacturing complexity, or other possible factors may vary. The different layers may have any suitable thickness. The inorganic anode layer (iv) is typically not much near 500 nanometers, such as near 1G_2GG nanometers. Buffer layer 12〇 usually not

0 \88\88435 DOC -24- =:〇毫微米’例如近50_200毫微米 =。。毫微米’例如近5"。毫微米;選用層14。通常不 大於近100亳撒半, ’、,如近20-80毫微米;陰極層150通常不 大於近100毫微半,仓丨 、'、1-50毫微米。若陽極110或陰極 150必須穿透至少—4b ~ 此層厚度不可超過近100毫微米。 展視電子裝置之應用而定,虹層13()可為藉信號活化之發光 :(如於發光二極體中)或回應輻射能並有或無外加電壓地 广號之材料層(如铺測器或伏打電池)。閱讀此專利說明 曰後,热諳此技者將可選擇適合其㈣制之材料。發光 材枓可與或無添加劑地分散在另一種材料之基材中或單獨 形^一層。肛層130-般具有近50-500毫微米範圍之厚度。 可由具有—或多層包含㈣吩與聚酸膠體之水性分散液 獲得益處之其他有機電子裝置的實例包括⑴將電能轉換成 輻射之裝置(如發光二極體、發光二極體顯示器或二極體雷 射),(2)偵測電子程序之信號的裝置(如光偵測器(如光電導 電池、光敏電阻、光電開關、光電晶體、光電管)、则測 器),(3)將賴射轉換成電能之裝置(如光伏打裝置或太陽能 電池)及⑷包含-或多個電子組件之裝置(如電晶體或二極 體)’其中該電子組件包含一或多個有機半導電層。 在有機發光二極體(0LED)中,電子及電洞分別由陰極 ^50及陽極110層注入EL層130十,在聚合物中形成負及正電 何極離子。這些極離子在所施電場的影響下遷移,與相反 電荷物種形成極離子激子,接著進行輻射再結合。可在裝 置中陽極與陰極之間施予足夠電位差,通常低於近12伏 O:\88\88435.DOC -25· 特在5午^例子中係不大於近5伏特。實際電位差可視裝置 在較大電子組件中之用途而[在許多具體實施例中,對 陽極層110加偏壓成正電壓,而陰極層150在電子裝置操作 功間實貝上係為接地電位或零伏特。電池或其他電源可以 電力方式與電子裝置連接當作電路的-部分,但未說明於 圖1中。 已發現具有緩衝層的〇LED具有較長壽命,其中該緩衝層 係由包含聚二氧4吩與膠體形成聚酸之水性分散液漁鑄: 成。此緩衝層可由聚二氧嘍吩與氟化聚磺酸膠體之水性分 散液洗鎿而成;在—個具體實施例中,水性分散液係—種 pH已調整至約3.5以上之分散液。 利用酸性較低或pH中性材料使裝置製造期間IT〇層的蝕 刻明顯降低,因此極低的匕及“離子濃度擴散入〇led聚合 物層。因為懷疑匕及Sn離子使操作壽命降低,這是一項重 要盈處。 較低酸性也降低製造期間及長期儲存過程中顯示器之金 屬組件(如電接觸墊)的腐蝕。PEDT/PSSA殘留物將與殘留 水分作用,釋放酸至顯示器中造成緩慢腐蝕。 用於为散酸性PEDT/PSSA之設備必須經特別設計以操作 PEDT/PSSA的強酸性。例如,發現用於塗佈pEDT/pssA於 ιτο基板上之鍍鉻狹縫模具塗佈頭因pEDT/pssA之酸性而 腐蝕。這使該頭無法使用,因為塗佈膜受到鉻粒子的污染。 而且,OLED顯示器的製造對某些喷墨印刷頭感興趣。他們 係用於將緩衝層及發光聚合物層分布在顯示器上精確位置 O:\88\88435.DOC -26- ^27152 2。這些印刷頭包含鎳網過濾器作為墨水粒子之内部捕集 器。這些鎳過濾器被酸性PED丁/PSSA分解 /、 田 1又丹煞法使 用。利用已降低酸性之本發明水性PEDT分散液將不會 這些腐蝕問題。 曰 再者,發現某些發光聚合物對酸性條件敏感,而且若其 與酸性緩衝層接觸將會降低其發光能力。較佳係使用I發 明水性PEDT分散液形成緩衝層,因為其酸性較低或 4 Km· ^ | 右各發光材料需要不同陰極材料以最佳化立 此刊用 兩或少種不同發光材料製造全彩或局部色彩顯示器將變得 複雜。顯示器裝置係由多重發光像素所構成。多彩裝置係 ,有至少兩種不同類型發不同顏色光之像素(有時相當於 -欠像素)。次像素係由不同發光材料所構成的。非常希望具 有可以所有光發射體提供良好裝置性能之單陰極材料4 降低裝置製造的複雜性。發現普通陰極可用於緩衝層係由 本發明水性PEDT分散液製成且各顏色保有良好裝^性能 之多彩裝置f。陰極可由任何上面所討論之材料製成並 可為經更不活潑金屬如鋁覆蓋之鋇。 可由具有—或多層包含聚切,包括聚二氧嘆吩與至少 一膠體形成聚酸之水性分散液獲得益處之其他有機電子裝 置係包括⑴將電⑮轉換成轄射之裝置(如發光二極體、發: 二極體顯示器或二極體雷射),(2)偵測電子程序之信號的裝 置(如光憤測器(如光電導電池、光敏電阻、光電開關、光電 晶體、光電管)、IR偵測器),(3)將輻射轉換成電能之裝置(如0 \88\88435 DOC -24- =: 〇 nanon', for example, near 50_200 nm =. . Nano's, for example, near 5". Nano; layer 14 is selected. Usually not more than nearly 100 亳 half, ', such as nearly 20-80 nm; cathode layer 150 is usually no more than nearly 100 nano-half, Cangjie, ', 1-50 nm. If anode 110 or cathode 150 must penetrate at least -4b ~ the thickness of this layer must not exceed approximately 100 nanometers. Depending on the application of the display electronics, the rainbow layer 13() can be a signal-activated luminescence: (as in a light-emitting diode) or a layer of material that responds to radiant energy with or without an applied voltage (eg, shop) Measurer or voltaic battery). After reading this patent description, the enthusiasm of this technology will be able to choose the material suitable for its (4) system. The luminescent material may be dispersed in a substrate of another material or may be separately formed with or without additives. The anal layer 130 generally has a thickness in the range of approximately 50-500 nanometers. Examples of other organic electronic devices that may benefit from having an aqueous dispersion comprising - or multiple layers comprising (iv) phenone and polyacid colloids include (1) devices that convert electrical energy into radiation (eg, light emitting diodes, light emitting diode displays, or diodes) Laser), (2) devices that detect signals from electronic programs (such as photodetectors (such as photoconductive cells, photoresistors, photoelectric switches, optoelectronic crystals, photocells), and detectors), (3) A device that converts into electrical energy (such as a photovoltaic device or a solar cell) and (4) a device (eg, a transistor or a diode) that includes - or a plurality of electronic components - wherein the electronic component includes one or more organic semiconducting layers. In the organic light-emitting diode (0LED), electrons and holes are injected into the EL layer 130 from the cathode ^50 and the anode 110, respectively, to form negative and positively charged ions in the polymer. These polar ions migrate under the influence of the applied electric field, form polar ionic excitons with opposite charge species, and then undergo radiation recombination. A sufficient potential difference between the anode and the cathode can be applied in the device, typically less than approximately 12 volts. O:\88\88435.DOC -25· In the case of 5 noon, the system is no more than approximately 5 volts. The actual potential difference can be used in a larger electronic component. [In many embodiments, the anode layer 110 is biased to a positive voltage, and the cathode layer 150 is grounded or zeroed on the slab of the electronic device. volt. The battery or other power source can be electrically connected to the electronic device as part of the circuit, but not illustrated in Figure 1. It has been found that a ruthenium LED having a buffer layer has a long life, wherein the buffer layer is formed by an aqueous dispersion containing polydioxan-4 and a colloid to form a polyacid. The buffer layer may be formed by washing an aqueous dispersion of polydioxane and a fluorinated polysulfonic acid colloid; in a specific embodiment, the aqueous dispersion is a dispersion having a pH adjusted to about 3.5 or more. The use of lower acid or pH neutral materials significantly reduces the etching of the IT layer during device fabrication, thus extremely low enthalpy and "ion concentration diffuses into the 聚合物led polymer layer. Because of the suspected enthalpy and Sn ions, the operating life is reduced. It is an important profit. Lower acidity also reduces corrosion of metal components (such as electrical contact pads) on the display during manufacturing and during long-term storage. PEDT/PSSA residues will react with residual moisture, releasing acid to the display causing slowness Corrosion. Equipment used to disperse acidic PEDT/PSSA must be specially designed to handle the strong acidity of PEDT/PSSA. For example, chrome-plated slot die coating heads for coating pEDT/pssA on ιτο substrates were found to be pEDT/ The acidity of pssA is corroded. This makes the head unusable because the coated film is contaminated with chromium particles. Moreover, the manufacture of OLED displays is of interest to certain inkjet printheads. They are used for buffer layers and luminescent polymers. The layers are distributed on the display at the exact position O:\88\88435.DOC -26- ^27152 2. These print heads contain a nickel mesh filter as an internal trap for the ink particles. These nickel filters Acidic PED/PSSA decomposition/, Field 1 and Tanjung method. The use of the aqueous PEDT dispersion of the present invention which has been reduced in acidity will not cause these corrosion problems. Further, it has been found that certain luminescent polymers are sensitive to acidic conditions, and If it is in contact with the acidic buffer layer, its light-emitting ability will be lowered. It is preferred to use the invention of the aqueous PEDT dispersion to form a buffer layer because of its low acidity or 4 Km·^ | right luminescent materials require different cathode materials for optimum It would be complicated to make a full-color or partial-color display with two or fewer different luminescent materials. The display device is composed of multiple illuminating pixels. There are at least two different types of pixels that emit different colors of light. (Sometimes equivalent to - under-pixels.) The sub-pixels are made up of different luminescent materials. It is highly desirable to have a single cathode material that can provide good device performance for all light emitters. 4 Reduce the complexity of device fabrication. Found that common cathodes can be used The buffer layer is made of the aqueous PEDT dispersion of the present invention and has a colorful device f for each color. The cathode can be any of the above. The materials discussed are made and may be covered with a more inert metal such as aluminum. Benefits may be obtained from aqueous dispersions having - or multiple layers comprising polycuts, including polydioxane and at least one colloid to form a polyacid. Other organic electronic devices include (1) devices that convert electricity 15 into conditioned devices (such as light-emitting diodes, hair: diode displays or diode lasers), and (2) devices that detect signals from electronic programs (eg, Photoinverter (such as photoconductive battery, photoresistor, photoelectric switch, photoelectric crystal, photocell), IR detector), (3) device that converts radiation into electrical energy (such as

0.\88\88435 DOC -27- 1327152 t置或太陽能電池)及(4)包含-或多個電子組件之 機半導^層晶體或二極體)’其中該電子組件包含一或多個有 蓋緩:==液或溶劑所塗佈之導電聚合物層所覆 導電聚合物^, 電何轉移也可改善塗佈性。適合的 嘍吩/¾苯乙包广’但不限於聚苯胺、聚4吩' 聚二氧0.\88\88435 DOC -27- 1327152 t- or solar cells) and (4) semi-conducting layers or diodes containing - or multiple electronic components) where the electronic component contains one or more There is a cover: == The conductive polymer layer coated with the liquid or solvent is coated with the conductive polymer, and the transfer can also improve the coating property. Suitable porphin/3⁄4 phenyl b-bundle but not limited to polyaniline, poly 4 phenanthene

0223中所福_以… 月子之申明案DuPont編號UC 合物。 …·聚酸-膠體、聚㈣、聚乙块及其組 膠個=明具體實施例中,提供包含聚二氧違吩與 場效應電晶體作為電極,導電二:=。為用於薄膜 聚合物用之液體必須分散或溶解該導電 I1谷以避免導電聚合物或半導電聚合物再溶解。由導電. 水合物製成之薄膜場效應電晶 之導電度。但是,以水溶性聚:=有:於… 犯圍在〜Μ S/厘米或更低之導電度。因此,在一個具體j 轭例中,電極包含聚(伸乙二氧 八 於、,γ、, ^ 及氟化膠體形成聚碏 夂亚开入導電度增高劑如奈米線、碳奈求管或類似物。在 另-個具體實施例中,電極包含聚 膠體形成全氟乙料酸並併人導 m)及 奈米管或類似物。本=度增'劑如奈米線、碳 中作為問極、没極或^物可用於薄膜場效應電晶體 本發明另一項說明是圖2所千★— '、之溥膜場效應電晶體。在此0223 in the blessing _ to ... month of the declaration of the DuPont number UC compound. .... Polyacid-colloid, poly(tetra), polybromide and its combination. In a specific embodiment, a polydioxane and a field effect transistor are provided as electrodes, and the conductivity is two:=. The liquid for use in the film polymer must disperse or dissolve the conductive I1 valley to avoid redissolution of the conductive polymer or semiconductive polymer. Conductivity of a thin film field effect transistor made of conductive hydrate. However, the water-soluble poly:= there is: in... the conductivity is around ~ Μ S / cm or lower. Therefore, in a specific example of j yoke, the electrode comprises poly(ethylene oxide, gamma, ^, and fluorinated colloids to form a polyfluorene-based conductivity enhancer such as a nanowire or a carbon nanotube Or the like. In another embodiment, the electrode comprises a polycolloid to form a perfluoroethylene acid and is in turn introduced to the m) and a nanotube or the like. The present invention can be used as a thin film field effect transistor, and another method for the present invention is another one of the inventions of Fig. 2: Crystal. here

〇 \88\88435 DOC -28· 1327152 說明中’介電聚合物或介電氧化物薄膜21〇一側具有閘極 2 2 0而另一側具有汲極2 3 〇及源極2 4 〇。有機半導電膜2 5 〇係 沉積在汲極與源極之間。包含奈米線或碳奈米管之本發明 艮丨生刀政液可理想地用於閘極、沒極及源極等應用中,因 為其在溶液薄膜沉積中與有機基質介電聚合物及半導電聚 δ物之相谷性。因為本發明導電組合物,如一個具體實施 例PEDT及膠體全氟乙烯磺酸係以膠體分散液存在,達高導 電度之滲濾閎限所需的導電填料重量百分比較低(相對於 包含水溶性聚磺酸之組合物)。 在本發明另一個具體實施例中,提供製造聚二氧噻吩之 水性分散液的方法,其包括在聚磺酸膠體的存在下聚合二 氧遠吩單體。在一個本發明方法具體實施例中,聚二氧屢 吩是一種聚伸烷二氧基嘧吩,而膠體形成聚磺酸係經氟 化。在另一個本發明方法具體實施例中,聚二氧違吩是聚 (3,4-伸乙二氧基嚙吩),而膠體形成聚磺酸係經全氟化。在 另一個本發明方法具體實施例中,膠體形成聚磺酸是全氧 乙烯磺酸。聚合作用係在水的存在下進行。可以離子交換 樹脂處理所得反應混合物以除去反應副產物。 現在藉由參考下列非限定實例更詳細地描述本發明。 實例 對照實例1 此對照實例說明伸乙二氧基噻吩在水溶性聚磺酸,即聚 (笨乙稀續酸)(PSSA)的存在下進行氧化聚合,產生非膠體 聚(伸乙二氧基噻吩)/聚(笨乙烯磺酸)(PEDT/PSSA)錯合物。 O:\88\88435.DOC -29- 1327152 藉溶解0.3246克硫酸鐵水合物(美國密蘇里州聖路易市 Sigma-Aldrich公司)於去離子水中製備硫酸鐵溶液,產生總 重量為39.4566克之溶液。此2.28克硫酸鐵溶液在塑膠瓶中 與300克去離子水、10.00克?33八(30重量%?33八,分子量為 70,000,美國賓州懷明頓市PolySciences公司)及1.72克過硫 酸納(Fluka,Sigma-Aldrich公司,美國密蘇里州聖路易市) 混合。硫酸鐵係作為聚合作用的觸媒,而過硫酸鈉為伸乙 二氧基嘍吩之氧化聚合作用的氧化劑。攪拌混合物,然後 將其放入3頸500毫升燒瓶中,其中該燒瓶裝有熱電偶用之 熱井。利用氣動架空攪拌器所驅動之攪拌槳攪拌混合物, 並將0.63毫升3,4-伸乙二氧基嘍吩(由美國賓州匹茲堡之 Bayer公司獲得的Baytron®-M)加入含PSS A混合物中。令 3,4-伸乙二氧基嘧吩之聚合作用在室溫下,即約22°C下進行 24小時。聚合作用的結果,澄清液體變成深色液體,其具 有PEDT/PSSA錯合物分散在水中之顏色。以由Millipore公 司(美國麻州Bedford)購得之5.0微米Millex®-SV針筒過濾 器測試PEDT/PSSA錯合物分散液的可濾性。以手施加高壓 於針筒柱塞上只有澄清無色液體通過過濾器,因此指示 PEDT/PSSA錯合物粒子太大而無法通過過濾器。 量約158克之一半PEDT/PSSA錯合物水性分散液係另以 兩種離子交換樹脂處理之。一為陽離子交換劑,交聯聚苯 乙烯之磺酸鈉(Lewatit®S100 WS,由美國賓州匹茲堡之 Bayer公司獲得的)。另一種為陰離子交換劑,交聯聚苯乙 稀之三級/四級胺的游離驗/氣化物(Lewatit®MP62 WS,由 〇 \88\88435 DOC -30- 1327152〇 \88\88435 DOC -28· 1327152 In the description, the dielectric polymer or dielectric oxide film 21 has a gate 2 2 0 on one side and a drain 2 3 〇 and a source 2 4 另一 on the other side. The organic semiconductive film 25 is deposited between the drain and the source. The invention includes a nanowire or a carbon nanotube. The invention can be ideally used in applications such as gate, immersion and source, because it is in solution film deposition with an organic matrix dielectric polymer and The phase tropism of semiconducting polyδ. Because the conductive composition of the present invention, such as a specific embodiment of PEDT and colloidal perfluoroethylene sulfonic acid, is present as a colloidal dispersion, the percentage of conductive filler required to achieve a high conductivity percolation limit is relatively low (relative to the inclusion of water soluble) Composition of polysulfonic acid). In another embodiment of the invention, there is provided a method of making an aqueous dispersion of polydioxythiophene comprising polymerizing a dioxyl far olefin monomer in the presence of a polysulfonic acid colloid. In a particular embodiment of the method of the invention, the polydioxane is a polyalkylene dioxy sulfonate and the colloid-forming polysulfonic acid is fluorinated. In another embodiment of the method of the invention, the polydioxophene is poly(3,4-exoethylenedioxy-terminated) and the colloid-forming polysulfonic acid is perfluorinated. In another embodiment of the method of the invention, the colloid-forming polysulfonic acid is peroxyethylene sulfonic acid. The polymerization is carried out in the presence of water. The resulting reaction mixture can be treated with an ion exchange resin to remove reaction by-products. The invention will now be described in more detail by reference to the following non-limiting examples. EXAMPLES Comparative Example 1 This comparative example illustrates the oxidative polymerization of ethylenedioxythiophene in the presence of a water-soluble polysulfonic acid, i.e., poly(p-ethylidene acid) (PSSA), to produce a non-colloidal poly(ethylenedioxy). Thiophene) / poly (stupidyl sulfonic acid) (PEDT / PSSA) complex. O:\88\88435.DOC -29- 1327152 A solution of iron sulfate was prepared by dissolving 0.3246 g of iron sulfate hydrate (Sigma-Aldrich, St. Louis, MO) in deionized water to give a solution having a total weight of 39.4566 g. This 2.28 grams of ferric sulfate solution in a plastic bottle with 300 grams of deionized water, 10.00 grams? 33 eight (30% by weight? 33, molecular weight 70,000, PolySciences, Remington, PA) and 1.72 grams of sodium persulfate (Fluka, Sigma-Aldrich, St. Louis, Missouri, USA). Iron sulfate is used as a catalyst for polymerization, and sodium persulfate is an oxidizing agent for the oxidative polymerization of ethylenedioxy porphin. The mixture was stirred and then placed in a 3-neck 500 ml flask equipped with a hot well for thermocouples. The mixture was stirred using a stirring paddle driven by a pneumatic overhead stirrer, and 0.63 ml of 3,4-extended ethylenedioxythiophene (Baytron®-M available from Bayer, Pittsburgh, PA) was added to the PSS A-containing mixture. The polymerization of 3,4-extended ethylenedioxysulfonate was carried out at room temperature, i.e., at about 22 ° C for 24 hours. As a result of the polymerization, the clarified liquid turned into a dark liquid having a color in which the PEDT/PSSA complex was dispersed in water. The filterability of the PEDT/PSSA complex dispersion was tested with a 5.0 micron Millex®-SV syringe filter available from Millipore Corporation (Bedford, MA). Applying high pressure by hand Only clear, colorless liquid passes through the filter on the syringe plunger, thus indicating that the PEDT/PSSA complex particles are too large to pass through the filter. An aqueous dispersion of about 158 grams of one-half PEDT/PSSA complex is additionally treated with two ion exchange resins. One is a cation exchanger, cross-linked polystyrene sodium sulfonate (Lewatit® S100 WS, available from Bayer Corporation of Pittsburgh, PA). The other is an anion exchanger, a cross-linked polystyrene third/quaternary amine free test/vapor (Lewatit® MP62 WS, by 〇 \88\88435 DOC -30-1327152

美國賓州匹茲堡之Bayer公司獲得的)。以去離子水分別清 洗 53 克 Lewatit®S100 WS及 51 克 Lewatit®MP62 WS ’ 直到水 無任何顏色。然後與158克PEDT/PSSA錯合物之水性分散液 混合前,先過濾兩清洗過之樹脂。以磁石攪拌器攪拌混合 物8小時。藉過濾除去樹脂。以重量分析法為基礎測得經樹 脂處理過之PEDT/PSSA錯合物的水性分散液係包含1.2重 量%固體。然後以購自Millipore公司(美國麻州Bedford)之 5.0微米Millex®-SV針筒過濾器及購自Whatman公司(美國 紐澤西州Clifton)之1.2微米GF/C針筒過滤器測試經樹脂處 理過之PEDT/PSSA水性分散液的可濾性。分散液通過5.0微 米Millex®-SV針筒過濾器,但以手施加高壓於針筒柱塞 上,只有澄清無色液體通過1.2微米GF/C針筒過濾器。如上 述般以光散射測量經樹脂處理過之PEDT/PSSA錯合物粒子 的平均粒徑,發現其為1.12微米(五次測量之平均,標準偏 差為0.04微米),聚合分散度為〇,40。 然後測試經樹脂處理過之PEDT/PSSA錯合物的導電度及f 發光性質。將ITO層為110至150毫微米厚之市售氧化銦錫 (IT0)/玻璃板裁成30釐米x30釐米尺寸的樣品。接著以氧電 漿蝕刻ITO層。欲用於導電度測量之玻璃基板上的1τ〇被蝕 刻成一系列欲用作電極之平行ΙΤΟ線。將欲製成LED以進行 發光測量之基板上的IT0蝕刻成15釐米X20釐米ITO層以作 為陽極。以1200 rpm的旋轉速度將經樹脂處理過之 PEDT/PSSA錯合物的水性分散液旋轉塗佈在各ITO/玻璃基 板上。所得PEDT/PSSA錯合物層係約140毫微米厚。該層品 0:\88«8435.D0C -31 - 1327152 質不均勻。塗有pedt/pssa錯合物之IT0/玻璃基板係在氮 氣中90°C下乾燥30分鐘。 藉測量兩電極間之電阻測得PEDT/PSSA錯合物層的導電 度’並以電阻、導電層的厚度及測量電阻所用兩電阻間的 距離為基礎,算得導電度為61xl0-3s/厘米。 對於發光測量’然後將超黃發射體聚(經取代苯乙块)(獲· 自德國Frankfurt之Covion公司的PDY 131)塗佈於 PEDT/PSSA錯合物層頂以作為活性電致發光(EL)層。£1^層 的厚度係近70毫微米。所有膜的厚度係以TENC〇R 5〇〇表面% 輪廓描繪儀量得。對於陰極,Ba及A1層係在1·3χ1 〇·4帕之真 空度下氣相沉積於EL層頂* Ba層之最終厚度為3毫微米;Obtained by Bayer of Pittsburgh, PA). Clean 53 grams of Lewatit® S100 WS and 51 grams of Lewatit® MP62 WS ′ with deionized water until the water has no color. The two washed resins were then filtered prior to mixing with 158 grams of the aqueous dispersion of PEDT/PSSA complex. The mixture was stirred with a magnetic stirrer for 8 hours. The resin was removed by filtration. An aqueous dispersion of the resin-treated PEDT/PSSA complex was measured by gravimetric analysis to contain 1.2% by weight solids. The resin was then tested with a 5.0 micron Millex®-SV syringe filter from Millipore Corporation (Bedford, MA) and a 1.2 micron GF/C syringe filter from Whatman Corporation (Clifton, New Jersey, USA). The filterability of the PEDT/PSSA aqueous dispersion. The dispersion passed through a 5.0 micron Millex®-SV syringe filter, but with a high pressure applied to the syringe plunger by hand, only the clear, colorless liquid passed through the 1.2 micron GF/C syringe filter. The average particle diameter of the resin-treated PEDT/PSSA complex particles was measured by light scattering as described above, and found to be 1.12 μm (average of five measurements, standard deviation of 0.04 μm), and the polymerization dispersion was 〇, 40 . The conductivity and f-luminescence properties of the resin treated PEDT/PSSA complex were then tested. A commercially available indium tin oxide (IT0)/glass plate having an ITO layer of 110 to 150 nm thick was cut into a sample having a size of 30 cm x 30 cm. The ITO layer is then etched with oxygen plasma. The 1τ〇 on the glass substrate to be used for conductivity measurement is etched into a series of parallel turns to be used as electrodes. The IT0 on the substrate to be made into an LED for luminescence measurement was etched into a 15 cm X 20 cm ITO layer as an anode. An aqueous dispersion of the resin-treated PEDT/PSSA complex was spin coated onto each ITO/glass substrate at a rotational speed of 1200 rpm. The resulting PEDT/PSSA complex layer was about 140 nm thick. The layer 0:\88«8435.D0C -31 - 1327152 is uneven. The IT0/glass substrate coated with the pedt/pssa complex was dried in nitrogen at 90 ° C for 30 minutes. The conductivity of the PEDT/PSSA complex layer was measured by measuring the resistance between the electrodes and based on the resistance, the thickness of the conductive layer, and the distance between the two resistors used to measure the resistance, the conductivity was calculated to be 61 x 10 -3 s / cm. For luminescence measurement 'The ultra-yellow emitter poly(substituted phenyl b) (obtained from Pov 131 from Covion, Frankfurt, Germany) was applied to the top of the PEDT/PSSA complex layer as active electroluminescence (EL) )Floor. The thickness of the £1^ layer is approximately 70 nm. The thickness of all films was measured by the TENC〇R 5〇〇 surface % profiler. For the cathode, the Ba and A1 layers are vapor deposited on the top of the EL layer at a vacuum of 1·3χ1 〇·4 Pa. The final thickness of the Ba layer is 3 nm;

Ba層頂之A1層的厚度是3〇〇毫微米^ LED裝置性能的測試如 下。以購自Keithley儀器公司(俄亥俄州Clevelan句之 Keithley 236源-測量單元及具有已校正矽光二極體之S37〇 照度計(加州Hawthorne之UDt Sensor公司)測量電流對所施 電壓之變化、發光強度對所施電壓之變化及發光效率(燭光| /女培-cd/A)。五個LED裝置係藉提高所施電壓以獲得2〇〇燭 光/平方厘米之光強度進行測試。平均為達此強度所施電壓. 為5.0伏特,平均光效率為5 4燭光/安培。這些裝置在8〇它 . 下具有小於卜〗、時之應力半衰期。 實例1 此貫例s兒明伸乙一氧基n塞吩在Nafion®的存在下之聚合 作用並描述因此所獲得之聚(伸乙二氧基p塞吩)的性質。 將U2.68克(16.03毫莫耳之Nafion®單體單位)SE-10072The thickness of the A1 layer at the top of the Ba layer is 3 〇〇 nanometer. The performance of the LED device is tested as follows. The change in current applied to the applied voltage and the luminous intensity were measured by a Keithley 236 source-measuring unit from Keithley Instruments, Ohio, and a S37 illuminometer with a corrected calender diode (UDt Sensor, Hawthorne, Calif.). The change in voltage applied and the luminous efficiency (candle | female-cd/A). Five LED devices were tested by increasing the applied voltage to obtain a light intensity of 2 〇〇candela/cm 2 . The applied voltage of the intensity is 5.0 volts, and the average light efficiency is 5 4 candelas/ampere. These devices have a stress half-life of less than 〖, and the stress half-life of the time. Example 1 Polymerization in the presence of Nafion® and describes the properties of the poly(epi-ethoxy p-phene) thus obtained. U2.68 g (16.03 mmol of Nafion® monomer unit) SE-10072

0\88\8S435.DOC •32- 與173.45克去離子水倒入500毫升Nalgenic®塑膠瓶中。先藉 去離子水溶解0.0667克硫酸鐵水合物(97%,美國密蘇里州 聖路易市Sigma-Aldrich公司)製得總重量為12 2775克之硫 酸鐵儲備溶液。然後將1 _4〇克硫酸鐵溶液及1 ·72克(7.224毫 莫耳)過硫酸鈉(Fluka,Sigma-Aldrich公司,美國密蘇里州 聖路易市)放入塑膠瓶中。將蓋子緊密地放回Nalgenic®塑. 膠瓶上並以手激烈搖晃瓶子。將該瓶内容物倒入上述5〇〇毫 升套層三頸燒瓶中。然後在反應容器中攪拌混合物3〇分 鐘。隨著攪拌將〇_63毫升(5.911毫莫耳作&)^011_]^(由美國賓看 州匹兹堡之Bayer公司所購得3,4-伸乙二氧基嘍吩的商標名) 加入反應混合物中。令聚合作用隨著攪拌在約23。匚下進 行。在1小時7分鐘内,聚合液體轉為極深藍色,然後將其 分裝入兩個250毫升塑膠瓿申。打開反應容器時,注意到攪 拌軸或反應容器之玻璃壁上無任何凝膠粒子。聚合液體的 總產量為297.10克。假設無任何損失且完全轉化,該液體 包含5.303%(重量/重量)固體。推測固體主要包含聚(3,4伸| 乙一氧基 p塞吩),PEDT/Naficm®。0\88\8S435.DOC • 32- and 173.45 grams of deionized water are poured into a 500 ml Nalgenic® plastic bottle. First, deionized water was used to dissolve 0.0667 g of iron sulfate hydrate (97%, Sigma-Aldrich, St. Louis, Missouri, USA) to prepare a total solution of 12 2775 grams of iron sulphate stock solution. Then, 1 _4 gram of ferric sulphate solution and 1.72 g (7.224 mM) of sodium persulfate (Fluka, Sigma-Aldrich, St. Louis, Missouri, USA) were placed in plastic bottles. Place the lid tightly back on the Nalgenic® plastic bottle and shake the bottle vigorously with your hand. The contents of the bottle were poured into the above 5 liter milliliter three-necked flask. The mixture was then stirred in a reaction vessel for 3 minutes. With stirring, 〇_63 ml (5.911 mmol) & ^011_]^ (trade name of 3,4-ethylenedioxy porphin purchased by Bayer, Pittsburgh, USA) was added to the reaction. In the mixture. The polymerization was allowed to stir at about 23. Let's go under your arm. Within 1 hour and 7 minutes, the polymerization liquid turned into a very dark blue color, which was then filled into two 250 ml plastic coatings. When the reaction vessel was opened, it was noted that there were no gel particles on the glass wall of the stirring shaft or the reaction vessel. The total yield of the polymerization liquid was 297.10 g. Assuming that there was no loss and complete conversion, the liquid contained 5.303% (w/w) solids. It is speculated that the solid mainly contains poly(3,4-extension|ethyl-oxy-p-thiophene), PEDT/Naficm®.

P 另以兩種離子交換樹脂處理148 75克兩塑膠瓶之一中的 水性PEDT/Nafion®。兩樹脂之一為Lewatit®si00,由美國 賓州匹茲堡之Bayer公司所購得交聯聚苯乙烯之磺酸鈉的 商標名。另一種離子交換樹脂是Lewatit®MP62WS,由美國 賓州匹茲堡之Bayer公司所購得交聯聚苯乙烯之三級/四級 胺的游離鹼/氣化物。使用前,以去離子水分別清洗兩樹 脂,直見到水無任何顏色。然後7 75克]^;^价(§)31〇〇及78 O:\88\88435.DOC -33- 1327152 克Lewatit®MP62®WS在塑膠瓶中與148.75克水性 PEDT/Nafion®分散液混合。然後將瓶子放在滾筒上攪拌約 23小時'然後經粗半熔玻璃汲斗抽器過濾所得泥漿。產量 為110.2克。以2.6%(重量/重量)分散液乾燥成之樣品的元素 分析為基礎,樣品包含21.75%碳、0.23%氫、1.06%氮及 2.45%硫。無分析其他元素如氧及氟。為除去I對硫分析的 干擾,加入CeCl3及陽離子交換樹脂。 10克PEDT/Nafion®分散液與10.01克去離子水混合,以乾 固體之重量分析為基礎,其構成2.6%(重量/重量)固體。然 後測試水性PEDT/Nafion®分散液的導電度及發光性質。如 對照實例2般,清理ITO厚度為100至150毫微米且ITO發光面 積為15釐米x20釐米之玻璃/ITO基板(30釐米x3 0釐米),接著 以氧電漿處理之。以700 rpm之旋轉速度將水性 PEDT/Nafion®分散液旋轉塗佈在ITO/玻璃基板上,產生96 毫微米厚度。塗有PEDT/Nafion®之ITO/玻璃基板係在真空 烘箱中90°C下乾燥30分鐘。測得PEDT/Nafion®膜的導電度 為 2.4xl(T3及 5.7xl(T4S/厘米。 然後將超黃發射體(PDY 131)塗佈於PEDT/Nafion®層 頂,其中超黃發射體是一種購自Covion公司(德國Frankfurt) 之聚(經取代苯乙炔)。EL層的厚度係近70毫微米。所有膜 的厚度係以TENCOR 500表面輪廓描繪儀量得。對於陰極, Ba及A1層係在lxl(T6帕之真空度下氣相沉積於EL層頂。Ba 層的最終厚度為30埃;A1層的厚度為3000埃。裝置性能的 測試如下。以購自Keithley儀器公司(俄亥俄州Cleveland)之 0\88\88435.DOC -34- 1327152P An aqueous PEDT/Nafion® in one of 148 75 g two plastic bottles was treated with two ion exchange resins. One of the two resins is Lewatit® si00, a trade name for sodium sulfonate of crosslinked polystyrene available from Bayer Corporation of Pittsburgh, PA. Another ion exchange resin is Lewatit® MP62WS, a free base/vapor of cross-linked polystyrene tertiary/quaternary amine available from Bayer Corporation of Pittsburgh, PA. Before use, wash the two resins with deionized water and see that the water has no color. Then 7 75 g] ^; ^ price (§) 31 〇〇 and 78 O: \88 \88435.DOC -33- 1327152 gram Lewatit® MP62® WS mixed with 148.75 grams of aqueous PEDT/Nafion® dispersion in a plastic bottle . The bottle was then placed on a roller and stirred for about 23 hours. The resulting slurry was then filtered through a thick semi-molten glass bucket. The yield was 110.2 g. Based on the elemental analysis of a sample dried by a 2.6% (w/w) dispersion, the sample contained 21.75% carbon, 0.23% hydrogen, 1.06% nitrogen, and 2.45% sulfur. No other elements such as oxygen and fluorine were analyzed. To remove the interference of I on the sulfur analysis, CeCl3 and a cation exchange resin were added. Ten grams of PEDT/Nafion® dispersion was mixed with 10.01 grams of deionized water based on a dry solids weight analysis which constituted 2.6% (w/w) solids. The conductivity and luminescent properties of the aqueous PEDT/Nafion® dispersion were then tested. A glass/ITO substrate (30 cm x 30 cm) having an ITO thickness of 100 to 150 nm and an ITO light-emitting area of 15 cm x 20 cm was cleaned as in Comparative Example 2, followed by treatment with oxygen plasma. The aqueous PEDT/Nafion® dispersion was spin coated onto the ITO/glass substrate at a rotational speed of 700 rpm to produce a 96 nm thickness. The ITO/glass substrate coated with PEDT/Nafion® was dried in a vacuum oven at 90 ° C for 30 minutes. The PEDT/Nafion® film was measured to have a conductivity of 2.4 x 1 (T3 and 5.7 x 1 (T4 S/cm.) The ultra-yellow emitter (PDY 131) was then applied to the top of the PEDT/Nafion® layer, where the ultra-yellow emitter was a Poly (substituted phenylacetylene) from Covion (Frankfurt, Germany). The thickness of the EL layer is approximately 70 nm. The thickness of all films is measured by the TENCOR 500 surface profiler. For the cathode, Ba and A1 layers Vapor deposition on the top of the EL layer at a vacuum of T6. The final thickness of the Ba layer was 30 angstroms; the thickness of the A1 layer was 3000 angstroms. The performance of the device was tested as follows. It was purchased from Keithley Instruments (Cleveland, Ohio). ) 0\88\88435.DOC -34- 1327152

Keithley236源-測量單元及購自udt 公司(加州Keithley 236 source-measure unit and purchased from udt company (California

Hawthorne)具有已校正矽光二極體之s37〇照度計測量電流 對所^電壓之變化、發光強度對所施電壓之變化及效率。 所測五個發光裝置顯示操作電壓範圍係從32至33伏特在 200濁光/平方米之亮度下,發光效率係在8.3濁光/安培至9.8 燭光/安培範圍内。這些裝置在8〇。〇下的應力半衰期係在, 243至303小時範圍内。 對照實例2 ' 此對照實例說明由水溶性聚(苯乙烯磺酸)製成之市售% PEDT分散液乾燥而成的固體膜性質。 在室溫下氮氣流中玻璃燒杯裏將約3〇毫升購自H cHawthorne) The s37 illuminometer with a calibrated neon diode measures the change in current, the change in luminescence intensity versus the applied voltage, and the efficiency. The five illuminators tested showed an operating voltage range from 32 to 33 volts at a brightness of 200 watts per square meter with luminous efficiencies ranging from 8.3 ray/amperes to 9.8 candelas per amp. These devices are at 8 inches. The stress half-life of the underarm is in the range of 243 to 303 hours. Comparative Example 2' This comparative example illustrates the solid film properties obtained by drying a commercially available % PEDT dispersion made of water-soluble poly(styrenesulfonic acid). About 3 〇 ml in a glass beaker at room temperature in a nitrogen stream was purchased from H c

Starck,GmbH(德國 Leverkusen)之 Baytron-P VP A1 4083(批 號為06Y76982)乾燥成固體膜e此乾膜薄片與約1〇毫升去離 子水混合並以手搖晃混合物,水轉為藍色,當大部分薄片 再分散於水中時,顏色變得非常深,水也變得非常酸,利 用購自EM Science(美國紐澤西州Gibbs〇n ;型錄編號為959〇)| 之彩色?1^1@指示劑(卩^10-14範圍)獲得1)11為〇。 對照實例3 此對照實例說明由另一種水溶性聚(苯乙烯磺酸)製成之 -市售水性PEDT分散液乾燥而成之固體膜的水分吸收度。 在室溫下氮氣流中玻璃燒杯裏將約30毫升構自h. C.Starck, GmbH (Leverkusen, Germany) Baytron-P VP A1 4083 (batch number 06Y76982) is dried into a solid film. This dry film sheet is mixed with about 1 ml of deionized water and the mixture is shaken by hand, and the water turns blue. When most of the flakes were redispersed in water, the color became very deep and the water became very acidic. Using color from EM Science (Gibbs〇n, New Jersey, USA, catalogue number 959〇)| 1^1@indicator (卩^10-14 range) obtains 1) 11 as 〇. Comparative Example 3 This comparative example illustrates the moisture absorption of a solid film obtained by drying another commercially available aqueous PEDT dispersion made of another water-soluble poly(styrenesulfonic acid). About 30 ml of glass beaker in a nitrogen stream at room temperature is constructed from h. C.

Starck,GmbH(德國 Leverkusen)之 Baytron-P CH8〇〇〇(批號 為CHN0004)乾燥成固體膜。大部分乾膜在約10毫升去離子 水中測試可再分散性及酸性並發現其行為係如對照實例2 O:\88\884i5 D0C -35- 1327152 所描述般。然後藉由熱重量分析儀(在氮氣中以20°C /分鐘的 速度)分析水分吸收度之前,使小部分乾膜薄片在週遭條件 下達平衡。此膜薄片在週遭條件下吸收29.4%水。這結果清 楚地說明PEDT膜是極吸濕的,而且任何所吸水分的水如對 照實例2中所說明般變得非常酸。VP AI 4083及CH8000 PEDT係販賣作為OLED之緩衝層的。 實例2 此實例說明由本發明水性PEDT/Nafion®乾燥而成之固 體膜的性質。 在室溫下氮氣流中玻璃燒杯裏將約30毫升實例1之水性 PEDT/Nafion®(2.6%)乾燥成固體膜。將大部分乾膜薄片與 去離子水混合並以水搖晃混合物。該薄片持續發光指示該 膜無泡脹。令人驚評地,水是無色的,指示PEDT/Nafion® 不可再分散於水中。而且,利用購自EM Science(美國紐澤 西州0丨1^3〇11;型錄編號為95 90)之彩色卩1^51@指示劑(卩11 0-14範圍)獲得水的pH為7。這結果清楚顯示聚酸不動的。 再者,這結果顯示PEDT/Nafion®表面主要是具有被PEDT 平衡之磺酸陰離子電荷的導電層。 藉由熱重量分析儀(在氮氣中以2(TC /分鐘的速度)分析水 分吸收度之前,令小部分乾膜薄片在週遭條件下達平衡。 此膜薄片只吸收5.6%水,其係遠低於對照實例3所說明之市 售PEDT。低水分吸收度也顯示PEDT/Nafion®表面主要是具 有被PEDT平衡之磺酸陰離子電荷的導電層。這使其吸濕性 比對照實例2及3所製得乾膜低。 O:\88\88435.DOC -36- 1327152 實例3 於薄膜場效應電晶體 此實例說明水性PEDT/Nafi〇n⑧用 中作為電極之用途。 部分實例2所描述之乾膜係與〒苯、氯仿或二氣子烧(溶 解用於薄膜場效應電晶體之有機半導電聚合物所用的普通 ,機溶劑)混合。該膜薄片不被有機溶劑泡服或該薄片使溶 劑褪色。這結果清楚說明PEDT/Nafi〇n⑧膜與半導電聚合物 之有機溶劑相容。因為導電聚合物係由水性分散液洗缚而. 成水將不會攻擊只溶於有機芳族溶劑,如歹苯或氯化溶· 劑如氣仿或二氣甲烷之半導電聚合物。Starck, GmbH (Leverkusen, Germany) Baytron-P CH8(R) (batch number CHN0004) was dried to form a solid film. Most of the dry film was tested for redispersibility and acidity in about 10 ml of deionized water and found to behave as described in Comparative Example 2 O:\88\884i5 D0C -35-1327152. A small portion of the dry film sheet was then equilibrated under ambient conditions before analyzing the moisture absorbance by a thermogravimetric analyzer (at a rate of 20 ° C / min in nitrogen). This film sheet absorbed 29.4% water under ambient conditions. This result clearly shows that the PEDT film is extremely hygroscopic, and any water that has absorbed water becomes very acidic as described in Example 2. VP AI 4083 and CH8000 PEDT are sold as buffer layers for OLEDs. Example 2 This example illustrates the properties of a solid film formed by drying the aqueous PEDT/Nafion® of the present invention. Approximately 30 ml of the aqueous PEDT/Nafion® (2.6%) of Example 1 was dried into a solid film in a glass beaker at room temperature under a stream of nitrogen. Most of the dry film flakes were mixed with deionized water and the mixture was shaken with water. The continued illumination of the sheet indicates that the film is not inflated. Surprisingly, the water is colorless, indicating that PEDT/Nafion® is no longer dispersible in water. Moreover, the pH of the water was obtained using a color 卩1^51@ indicator (range 卩11 0-14 range) purchased from EM Science (New Jersey, USA 0丨1^3〇11; catalog number 95 90) 7. This result clearly shows that the acid is not moving. Again, this result shows that the PEDT/Nafion® surface is primarily a conductive layer with a sulfonic acid anion charge balanced by PEDT. A small portion of the dry film sheet was equilibrated under ambient conditions by a thermogravimetric analyzer (analyze the moisture absorbance at 2 (TC/min speed) in nitrogen. This film sheet only absorbed 5.6% water, which is much lower. The commercially available PEDT as described in Comparative Example 3. The low moisture absorbance also indicates that the PEDT/Nafion® surface is primarily a conductive layer having a sulfonic acid anion charge balanced by PEDT. This makes it more hygroscopic than Comparative Examples 2 and 3. The dry film was made low. O:\88\88435.DOC -36- 1327152 Example 3 In a thin film field effect transistor This example illustrates the use of an aqueous PEDT/Nafi〇n8 as an electrode. The dry film described in Part 2 It is mixed with toluene, chloroform or bismuth (the common, organic solvent used to dissolve the organic semiconductive polymer used in the thin film field effect transistor). The film is not bubbled by the organic solvent or the film is discolored by the solvent. This result clearly shows that the PEDT/Nafi〇n8 film is compatible with the organic solvent of the semiconductive polymer. Because the conductive polymer is bound by the aqueous dispersion, the water will not attack and dissolve only in the organic aromatic solvent, such as Benzene or chlorinated A semi-conductive polymer such as a gas-like or di-methane.

測試實例2所製得之水性PEDT/Nafi〇n@分散液(2 6%重量 /重量)的導電度。清理IT0厚度為1〇〇至15〇毫微米之玻璃 /ΙΤΟ基板(3〇釐米Χ3〇釐米),接著以氧電聚處理之。該IT。 基板上具有平行蝕刻的ΙΤΟ線供電阻測量用。將水性 PEDT/Nafion®分散液旋轉塗佈在ΙΤ〇/玻璃基板上。塗有 PEDT/Nafion®之ΙΤΟ/玻璃基板係在真空供箱中9〇。〇下乾燥 30分鐘。測得PEDT/Nafion®膜之導電度為2.4xl〇_3及 5.7x 10 S/厘米。此導電度係低於薄膜場效應電晶體電極所 需。但是,導電聚合物以膠體存在於分散液中之導電 PEDT/Nafion®的用途容許摻入導電填料如奈米線、金屬之 奈米粒子或破奈米管。例如,直徑為15毫微米且導電度為 1.7xl04 S/厘米之金屬鉬線是可取得的並如Zach等人在The conductivity of the aqueous PEDT/Nafi〇n@dispersion (2.6% w/w) prepared in Example 2 was tested. The glass/germanium substrate (3 cm cm 3 cm) with an IT0 thickness of 1 〇〇 to 15 〇 nm was cleaned and then treated with oxygen. The IT. A parallel etched tantalum wire is provided on the substrate for resistance measurement. The aqueous PEDT/Nafion® dispersion was spin coated onto a ruthenium/glass substrate. The PEDT/Nafion® coated glass/glass substrate is 9 inches in a vacuum supply. Dry under the arm for 30 minutes. The conductivity of the PEDT/Nafion® film was measured to be 2.4 x 10 〇 3 and 5.7 x 10 S/cm. This conductivity is lower than that required for thin film field effect transistor electrodes. However, the use of conductive PEDT/Nafion® in which the conductive polymer is present in the dispersion as a colloid allows the incorporation of a conductive filler such as a nanowire, a metal nanoparticle or a nanotube. For example, a metal molybdenum wire having a diameter of 15 nm and a conductivity of 1.7 x 10 4 S/cm is available and as Zach et al.

Science,第290卷,第2120頁中所描述般可用於提高導電 度。直徑為8毫微米、長為20微米且導電度為60 S/厘米之碳 0\88\88435.DOC -37- 1327152 奈米管也是可取得的並如Niu等人在尸/zys. Ze/ί.,第70 卷,第1480頁中所描述般可用於提高導電度。因為 PEDT/Nafion®的膠體性質及粒子表面主要是導電層,一旦 PEDT/Nafion®接合,達高導電度之滲濾閎限所需要的高度 導電填料的重量百分比較低。 實例4 此實例5兒明伸乙·一氧基11塞吩在不同條件及Nafion®的存 在下之聚合作用。使用三種不同類型之Nafi on®樹脂: SE-10072、DE-1021 及 DE-1020。 在套層燒瓶中加入水性Nafion®分散液及水。將混合物溫 熱至所示溫度並授拌4 5分鐘。在此混合物中依序加入氧化 劑、觸媒及二氧嘧吩單體。添加完成後,令混合物在所示 溫度下攪拌一段所示時間。然後以Lewatit®強酸陽離子樹 月曰(鈉型)及Lewatit®弱驗陰離子樹脂批次處理反應混合物 或使其通過裝有這兩種離子交換樹脂之管柱以終止反應。 然後所得泥漿混合物在室溫下攪拌丨6小時,然後經濾紙(孔 徑>20-25微米)過濾。濾液然後經濾紙(孔徑>6微米)過濾。 最後所得濾液係經0.45微米過濾器過濾。藉添加以及充分 搖晃混合將所得濾液調配成具目標固體含量之最終產物。 聚合參數係概述於下表1中。It can be used to improve conductivity as described in Science, Vol. 290, page 2120. Carbon 0\88\88435.DOC -37- 1327152 nanotubes with a diameter of 8 nm, a length of 20 μm and a conductivity of 60 S/cm are also available and are available as Niu et al. at corpse/zys. Ze/ ί., as described in Volume 70, page 1480, can be used to increase conductivity. Because of the colloidal nature of PEDT/Nafion® and the predominantly conductive surface of the particles, once PEDT/Nafion® is bonded, the high percentage of conductive filler required for high conductivity percolation limits is low. EXAMPLE 4 This example 5 shows the polymerization of B. ethoxyphene 11 in different conditions and in the presence of Nafion®. Three different types of Nafi on® resins are used: SE-10072, DE-1021 and DE-1020. Aqueous Nafion® dispersion and water were added to the jacketed flask. The mixture was warmed to the indicated temperature and allowed to mix for 45 minutes. An oxidizing agent, a catalyst, and a dioxoprene monomer are sequentially added to the mixture. After the addition is complete, the mixture is allowed to stir at the indicated temperature for a indicated period of time. The reaction mixture is then batch treated with Lewatit® strong acid cation tree ruthenium (sodium form) and Lewatit® weakly anion resin or passed through a column containing the two ion exchange resins to terminate the reaction. The resulting slurry mixture was then stirred at room temperature for 6 hours and then filtered through a filter paper (pore size > 20-25 microns). The filtrate was then filtered through filter paper (pore size > 6 microns). The resulting filtrate was filtered through a 0.45 micron filter. The resulting filtrate was formulated into the final product having the desired solid content by addition and shaking with sufficient shaking. The polymerization parameters are summarized in Table 1 below.

O:\88\88435.DOC -38- 1327152 表1.概述PEDT/Nafion®之合成 Nafion 氧化劑/ Nafion/ 溫度 反應 離子 所得 所調配 樣品 批次 單體 單體 (°C) 時間(小 時,分鐘) 交換 PEDT· Nafion (%) PEDT· Nafion (%) A SE-10072 1.221 2.756 20.2 20,49 批次 2.81 2.8 B DE-1021 1.221 2.756 20.2 20,47 批次 2.81 2.8 C DE-1021 1.221 2.756 20.2 21,00 管柱 2.81 2.8 D DE-1020 1.221 2.756 20.2 21,00 批次 2.81 2.8 E DE-1020 1.221 2.756 20.1 21,00 管柱 2.81 2.8 F DE-1020 1.221 5.513 20.2 23,15 管柱 2.80 5.5 G DE-1021 1.221 5.513 20.2 44,08 管柱 2.80 5.9 H DE-1020 1.221 5.513 20.2 24,56 批次 5.48 5.4 I DE-1020 0.50 3.00 20.2 23,43 批次 2.89 2.8 J DE-1020 1.50 3.00 20.1 24,00 管柱 2.69 2.6 K DE-1020 2.00 1.00 20.1 14,52 批次 3.04 3.0 L DE-1020 1.25 3.00 35.0 16,34 批次 6.04 3.4 M DE-1020 2.00 3.00 35.0 24,05 管柱 3.01 3.0 N DE-1020 1.25 3.00 35.0 14,54 批次 4.52 3.4 0 DE-1020 1.5 3.00 35.0 14,55 批次 4.52 4.5 P DE-1020 0.75 3.00 35.0 24,00 批次 4.51 4.5 Q DE-1020 1.00 3.00 35.0 16,36 批次 4.52 3.8 R DE-1020 1.00 2.00 35.0 16,31 批次 4.52 4.5 S DE-1020 1.00 2.50 35.0 16,28 批次 4.52 3.0 T DE-1020 1.00 3.00 35.0 41,17 批次 3.51 3.5 u DE-1020 1.25 3.00 35.0 41,19 批次 3.51 3.5 V DE-1020 1.50 3.00 35.0 41,22 批次 3.51 3.5 w DE-1020 1.25 3.00 35.0 14,02 管柱 4.52 3.0 X DE-1020 1.00 2.75 35.0 14,27 批次 4.52 3.6 Y DE-1020 1.00 2.25 35.0 13,20 批次 4.52 3.6 z DE-1020 1.25 2.75 35.0 14,28 批次 4.52 3.5 AA DE-1020 1.25 2.50 35.0 13,47 批次 4.52 3.5 BB DE-1020 1.25 2.25 35.0 13,39 批次 4.53 3.5 CC DE-1020 1.25 2.00 35.0 13,42 批次 4.53 3.5 DD DE-1020 1.50 2.75 35.0 13,16 批次 4.53 3.5 EE DE-1020 1.50 2.50 35.0 13,17 批次 4.53 3.5 FF DE-1020 1.50 2.25 35.0 13,18 批次 4.53 2.8 GG DE-1020 1.50 2.00 35.0 12,58 批次 4.54 3.0 HH DE-1020 1.75 3.00 35.0 13,10 批次 4.53 3.5 II DE-1020 1.75 2.75 35.0 13,05 批次 4.53 3.0 KK DE-1020 0.75 2.75 35.0 13,27 批次 4.51 3.5 KK DE-1020 0.75 2.50 35.0 13,25 批次 4.51 3.5 LL DE-1020 0.75 2.25 35.0 5,55 批次 4.52 3.5 O:\88\88435 DOC -39- 1327152 MM DE-1020 0.75 2.00 35.0 5,52 批次 4.52 3.0 NN DE-1020 0.50 3.00 35.0 23,38 批次 4.51 3.5 00 DE-1020 0.50 2.75 35.0 23,38 批次 4.51 3.5 PP DE-1020 0.50 2.50 35.0 22,53 批次 4.51 3.5 QQ DE-1020 0.50 2.25 35.0 22,54 批次 4.51 3.5 實例5O:\88\88435.DOC -38- 1327152 Table 1. Summary of the synthesis of PEDT/Nafion® Nafion oxidant / Nafion / temperature reaction ion obtained sample batch monomer monomer (°C) time (hours, minutes) Exchange PEDT· Nafion (%) PEDT· Nafion (%) A SE-10072 1.221 2.756 20.2 20,49 Lot 2.81 2.8 B DE-1021 1.221 2.756 20.2 20,47 Lot 2.81 2.8 C DE-1021 1.221 2.756 20.2 21, 00 Column 2.81 2.8 D DE-1020 1.221 2.756 20.2 21,00 Lot 2.81 2.8 E DE-1020 1.221 2.756 20.1 21,00 Column 2.81 2.8 F DE-1020 1.221 5.513 20.2 23,15 Column 2.80 5.5 G DE- 1021 1.221 5.513 20.2 44,08 Column 2.80 5.9 H DE-1020 1.221 5.513 20.2 24,56 Lot 5.48 5.4 I DE-1020 0.50 3.00 20.2 23,43 Lot 2.89 2.8 J DE-1020 1.50 3.00 20.1 24,00 Tube Column 2.69 2.6 K DE-1020 2.00 1.00 20.1 14,52 Batch 3.04 3.0 L DE-1020 1.25 3.00 35.0 16,34 Batch 6.04 3.4 M DE-1020 2.00 3.00 35.0 24,05 Column 3.01 3.0 N DE-1020 1.25 3.00 35.0 14,54 Batch 4.52 3.4 0 DE-1020 1.5 3.00 35.0 14,55 Batch 4.52 4.5 P DE-1020 0.75 3.00 35.0 24,00 Batch 4.51 4.5 Q DE-1020 1.00 3.00 35.0 16,36 Lot 4.52 3.8 R DE-1020 1.00 2.00 35.0 16,31 Batch 4.52 4.5 S DE-1020 1.00 2.50 35.0 16,28 Batch 4.52 3.0 T DE-1020 1.00 3.00 35.0 41,17 Batch 3.51 3.5 u DE-1020 1.25 3.00 35.0 41,19 Batch 3.51 3.5 V DE-1020 1.50 3.00 35.0 41,22 Batch 3.51 3.5 w DE-1020 1.25 3.00 35.0 14,02 Column 4.52 3.0 X DE-1020 1.00 2.75 35.0 14,27 Batch 4.52 3.6 Y DE-1020 1.00 2.25 35.0 13,20 Batch 4.52 3.6 z DE-1020 1.25 2.75 35.0 14,28 Batch 4.52 3.5 AA DE-1020 1.25 2.50 35.0 13,47 Batch 4.52 3.5 BB DE-1020 1.25 2.25 35.0 13,39 Batch 4.53 3.5 CC DE-1020 1.25 2.00 35.0 13,42 Batch 4.53 3.5 DD DE-1020 1.50 2.75 35.0 13,16 Batch 4.53 3.5 EE DE-1020 1.50 2.50 35.0 13,17 Batch 4.53 3.5 FF DE-1020 1.50 2.25 35.0 13,18 Batch 4.53 2.8 GG DE-1020 1.50 2.00 35.0 12,58 Batch 4.54 3.0 HH DE-1020 1.75 3.00 35.0 13 , 10 batches 4.53 3.5 II DE-1020 1.75 2.75 35.0 13,05 batch 4.53 3.0 KK DE-1020 0.75 2.75 35.0 13,27 lot 4.51 3.5 KK DE-1020 0 .75 2.50 35.0 13,25 Lot 4.51 3.5 LL DE-1020 0.75 2.25 35.0 5,55 Batch 4.52 3.5 O:\88\88435 DOC -39- 1327152 MM DE-1020 0.75 2.00 35.0 5,52 Batch 4.52 3.0 NN DE-1020 0.50 3.00 35.0 23,38 Batch 4.51 3.5 00 DE-1020 0.50 2.75 35.0 23,38 Batch 4.51 3.5 PP DE-1020 0.50 2.50 35.0 22,53 Batch 4.51 3.5 QQ DE-1020 0.50 2.25 35.0 22 , 54 batches 4.51 3.5 example 5

此實例說明由實例4之PEDT/Nafion®分散液所製得各膜 之導電度差異。玻璃基板係以圖案ITO電極製備。緩衝層係 由所示分散液旋轉澆鑄形成薄膜於圖案基板頂上,之後在 真空烘箱中90°C下烘烤0.5小時。在乾燥箱中利用高電阻靜 電計測量ITO電極間的電阻。該膜厚度係利用Dec-Tac表面 輪廓描繪儀(Alpha-Step 500表面輪廓描繪儀,Tencor儀器) 量得。由電阻及厚度計算缓衝層之導電度。 結果係以圖形表示於圖3及4中。可見藉由組成的改變可 將導電度極佳地控制在1(T2 S/厘米至10_9 S/厘米範圍内。 實例6This example illustrates the difference in conductivity of each film made from the PEDT/Nafion® dispersion of Example 4. The glass substrate was prepared using a patterned ITO electrode. The buffer layer was spin-cast from the indicated dispersion to form a film on top of the pattern substrate, followed by baking at 90 ° C for 0.5 hour in a vacuum oven. The resistance between the ITO electrodes was measured using a high resistance static electricity meter in a dry box. The film thickness was measured using a Dec-Tac surface profiler (Alpha-Step 500 surface profiler, Tencor instrument). The conductivity of the buffer layer is calculated from the resistance and the thickness. The results are graphically represented in Figures 3 and 4. It can be seen that the conductivity can be excellently controlled in the range of 1 (T2 S/cm to 10_9 S/cm by the change of composition. Example 6

此實例說明不同PEDT/Nafion®組合物用於OLED中作為 緩衝層之性能。 利用可溶聚(1,4-苯乙炔)共聚物(C-PPV)(H. Becker,H. Spreitzer, W. Kreduer, E. Kluge, H. Schenk, I. D. ParkerAY. Cao, Ji/v. Ma/er. 12, 42(2000))作為活性半導電發光聚合物 製造發光二極體;C-PPV膜的厚度為700-900埃。C-PPV在 〜5 60毫微米具有放射波峰發出黃-綠色光。氧化銦/錫係用作 陽極。由溶液將PEDT/Nafion®膜旋轉洗鑄在圖案基板頂面 上,之後在真空烘箱中90°C下烘烤0.5小時。該裝置結構為 ITO/PEDT- Nafion®/C-PPV/金屬。利用ITO於玻璃上作為基 〇 \88\88435 DOC -40- 1327152 板(塗佈ITO/玻璃)製造裝置。裝置係以Ca或Ba層作為陰極 所製得。在低於1 X 1 (Γ6托之壓力下利用真空氣相沉積將金屬 陰極膜製造在C-PPV層頂面上,產生面積為3平方厘米之活 性層。以STM-100厚度/速率計量器(Sycon儀器公司)監測沉 積。2,000-5,000埃之鋁係沉積在30埃鋇或鈣層頂面上。測 量各裝置之電流對電壓曲線、光對電壓曲線及量子效率。 裝置係利用中間插入可UV硬化環氧樹脂之蓋玻璃包 膠。經包膠裝置在烘箱中80°C及固定電流下運作。通過裝 置之總電流為〜10毫安培,亮度係近200濁光/平方米或600 燭光/平方米。紀錄各裝置的亮度及電壓以測定80°C下之半 衰期及電壓增加率。 結果係提供於下表2中。 表2.裝置性能 樣品ED 旋轉 〆 M〇°C 速率 厚度 導電度 電壓 效率 I.L. tl/2 I.L.* t,/2 [rpm] [埃] [S/厘米] [伏特] [濁光/安培] [燭光/平 方米] [小時] 4-N 3000 1114 1.2x10'° 3.8-3.9 (1) 7.8-8.8 (1) 141 252 35532 4-Q 2000 2096 6.9x10° 3.0-3.1 (1) 8.8-9.7 (1) 162 317 51354 4-X 2300 1390 1.0x1 O'4 3-5(2) 10.6(2) 468 140 65520 4-Z 2000 840 5.9x10'° 4.6⑵ 9.3(2) 471 102 48042 4-AA 800 1227 2.4x10° 4(2) 10⑵ 449 112 50288 對照1 1200 1400 6.1xl0'J 5(1) 5-4(1) <1 I.L. =初亮度 (1) 在200燭光/平方米下量得 (2) 在600燭光/平方米下量得 實例7This example illustrates the performance of different PEDT/Nafion® compositions for use as a buffer layer in OLEDs. Using soluble poly(1,4-phenylacetylene) copolymer (C-PPV) (H. Becker, H. Spreitzer, W. Kreduer, E. Kluge, H. Schenk, ID Parker AY. Cao, Ji/v. Ma /er. 12, 42 (2000)) A light-emitting diode is produced as an active semiconductive light-emitting polymer; the thickness of the C-PPV film is 700-900 angstroms. C-PPV emits yellow-green light at ~5 60 nm with a radiation peak. Indium oxide/tin is used as the anode. The PEDT/Nafion® film was spin-dried from the solution on the top surface of the pattern substrate and then baked in a vacuum oven at 90 ° C for 0.5 hours. The device structure is ITO/PEDT- Nafion®/C-PPV/metal. A device was fabricated using ITO on glass as a base 88 \88\88435 DOC -40-1327152 plate (coated ITO/glass). The apparatus was prepared using a Ca or Ba layer as a cathode. A metal cathode film was fabricated on the top surface of the C-PPV layer by vacuum vapor deposition at a pressure of less than 1 X 1 (Γ6 Torr, resulting in an active layer having an area of 3 cm 2 . STM-100 thickness/rate meter (Sycon Instruments) monitors the deposition. 2,000-5,000 angstroms of aluminum is deposited on the top surface of the 30 angstrom or calcium layer. The current versus voltage curve, the light versus voltage curve, and the quantum efficiency of each device are measured. UV hardened epoxy resin cover glass encapsulation. It is operated in an oven at 80 ° C and a fixed current. The total current through the device is ~10 mA, and the brightness is nearly 200 turbid / square meter or 600 candelas. / square meter. Record the brightness and voltage of each device to determine the half-life and voltage increase rate at 80 ° C. The results are provided in Table 2. Table 2. Device performance sample ED Rotation 〆 M 〇 ° C Rate thickness conductivity Voltage efficiency IL tl/2 IL* t,/2 [rpm] [Angstrom] [S/cm] [Volt] [Cloudy/Amp] [Candle/m2] [Hour] 4-N 3000 1114 1.2x10'° 3.8-3.9 (1) 7.8-8.8 (1) 141 252 35532 4-Q 2000 2096 6.9x10° 3.0-3.1 (1) 8.8-9.7 (1) 162 317 51354 4-X 2300 1390 1.0x1 O'4 3-5(2) 10.6(2) 468 140 65520 4-Z 2000 840 5.9x10'° 4.6(2) 9.3(2) 471 102 48042 4-AA 800 1227 2.4x10° 4(2) 10(2) 449 112 50288 Control 1 1200 1400 6.1xl0'J 5(1) 5-4(1) <1 IL = initial brightness (1) at 200 candelas per square meter The amount of (2) is measured at 600 candelas per square meter.

0\88\88435.DOC -41 - rI327152 此實例說明PEDT/Nafion®水性分散液的製備。Nafi〇n® 疋利用類似美國專利第6,150,426號,實例9之程序所製得 EW為990的12.5%(重量/重量)水性膠體分散液。 將63.87克(8.06毫莫耳之]^心〇11@單體單位)1^£][〇11@水性 膠體分散液及234_47克去離子水集中在5〇〇毫升套層三頸 圓底燒瓶中。加入硫酸鐵及過硫酸納之前,先搜拌混合物 45分鐘。先藉去離子水溶解〇 〇141克硫酸鐵水合物(97%,0\88\88435.DOC -41 - rI327152 This example illustrates the preparation of a PEDT/Nafion® aqueous dispersion. Nafi〇n®® A 12.5% (w/w) aqueous colloidal dispersion having an EW of 990 was prepared using a procedure similar to that of U.S. Patent No. 6,150,426, Example 9. 63.87 g (8.06 mmol) ^心〇11@单单位)1^£][〇11@aqueous colloidal dispersion and 234_47g deionized water concentrated in 5〇〇 ml set of three-necked round bottom flask in. Mix the mixture for 45 minutes before adding ferric sulfate and sodium persulfate. First, deionized water was used to dissolve 〇 〇 141 g of ferric sulfate hydrate (97%,

Aldrich型錄編號為30,771-8)製得總重量為3.6363克之硫酸 鐵儲備溶液ϋ後將G.96克(G.GG72毫莫耳)硫g《鐵溶液及· 0.85克(3,57毫莫耳)過硫酸鈉(Fluka,型錄編號為71899)放 入反應燒瓶中並授拌混合物。然後加入〇·3 12毫升(2·928毫 莫耳)Baytron-M(由美國匹茲堡之Bayer購得3,4_伸乙二氧基 4吩之商標名)之前,先攪拌混合物3分鐘,然後隨著攪拌 將Baytron-M加入反應混合物中。令聚合作用在藉循環流體 所控制之約20°C下攪拌進行。聚合液體開始在13分鐘内轉 為監色。藉加入 8.91克 Lewatit®S100及 7.70克 Lewatit®MP62 WS於16_1小時終止反應,其中Lewatit@sl〇〇是由賓州匹茲 堡之Bayer公司所購得交聯聚苯乙烯之磺酸鈉的商標名而Aldrich model number 30,771-8) obtained a total weight of 3.6363 grams of iron sulfate stock solution, then G.96 grams (G.GG72 millimoles) sulfur g "iron solution and · 0.85 grams (3,57 millimol The ear sodium persulfate (Fluka, catalog number 71899) was placed in the reaction flask and the mixture was stirred. Then, before adding 12 ml (2·928 mmol) Baytron-M (trade name of 3,4_ethylenedioxy 4 phene from Bayer, Pittsburgh, USA), the mixture was stirred for 3 minutes, then Baytron-M was added to the reaction mixture with stirring. The polymerization was allowed to proceed by stirring at about 20 ° C controlled by the circulating fluid. The polymerization liquid began to change color within 13 minutes. The reaction was terminated by the addition of 8.91 g of Lewatit® S100 and 7.70 g of Lewatit® MP62 WS, which was sold under the trade name of sodium sulfonate of cross-linked polystyrene from Bayer, Pittsburgh, Pennsylvania.

Lewatit®MP62 WS是由賓州匹茲堡之Bayer公司所獲得交 聯聚苯乙烯之三級/四級胺的游離鹼/氣化物的商標名。使用 前’先以去離子水分別清洗兩樹脂,直到水無任何顏色。 此樹脂處理進行5小時。然後所得泥漿經Whatman,54號濾 紙抽氣過濾。其非常快速地通過濾紙。產量為244克。以所 加聚合組成份計,固體%為約3 1%(重量/重量)。以購自Lewatit® MP62 WS is the trade name for the free base/vapor of crosslinked polystyrene tertiary/quaternary amines obtained from Bayer Corporation of Pittsburgh, PA. Wash the two resins separately with deionized water before use until the water has no color. This resin treatment was carried out for 5 hours. The resulting slurry was then suction filtered through Whatman, No. 54 filter paper. It passes the filter paper very quickly. The yield was 244 grams. The % solids was about 31% (w/w) based on the added polymer component. Purchased from

OA88\S8435.DOC -42- 1327152OA88\S8435.DOC -42- 1327152

Corning公司(美國紐約州Corning)之3 1 5pH/離子計量器測 得水性 PEDT/Nafion® 的 pH為 3.8。 實例8 此實例說明PEDT/Nafion⑧乾膜之不可分散性。 在週遭溫度下以氮氣流乾燥約10毫升實例7所製得之水 性PEDT/Nafion®分散液》與10毫升去離子 水混合。水保持無色及澄清約數個月。 實例9The pH of the aqueous PEDT/Nafion® was 3.8 measured by a 3 1 5 pH/ion meter from Corning (Corning, NY). Example 8 This example illustrates the non-dispersibility of PEDT/Nafion 8 dry film. Approximately 10 ml of the aqueous PEDT/Nafion® dispersion prepared in Example 7 was dried under a nitrogen stream at ambient temperature and mixed with 10 ml of deionized water. The water remains colorless and clarifies for several months. Example 9

此實例說明水性PEDT/Nafion®分散液對ITO無腐蝕性。 利用實例7所製得之水性PEDT/Nafion⑧旋轉塗佈在ITO 基板上。利用X射線光電子能譜儀(XPS)測試PEDT/Nafion® 頂部表面。無測得任何銦或錫元素,指示ITO不受pH為3.8 之水性PEDT/Nafion®分散液的攻擊。 對照實例4 此對照實例說明乾Baytron-P的可再分散性及其對ITO的This example demonstrates that the aqueous PEDT/Nafion® dispersion is non-corrosive to ITO. The aqueous PEDT/Nafion 8 prepared in Example 7 was spin-coated on an ITO substrate. The top surface of the PEDT/Nafion® was tested using an X-ray photoelectron spectroscopy (XPS). No indium or tin was detected, indicating that the ITO was not attacked by an aqueous PEDT/Nafion® dispersion having a pH of 3.8. Comparative Example 4 This comparative example illustrates the redispersibility of dry Baytron-P and its effect on ITO

腐钱性。 CH8000,一 種購自 H. C. Starck GmbH(德國 Leverkusen)Rotten money. CH8000, one from H. C. Starck GmbH (Leverkusen, Germany)

之OLED級Baytron-P,是一種以聚苯乙烯磺酸(pss A)製得 之水性聚(3,4-伸乙二氧基噻吩),?已〇1'。?£01'對?33八及聚 苯乙烯磺酸酯(PSS)的比例為1 : 20(重量/重量)。 PEDT/PSS/PSSA之pH係在範圍1。在週遭條件下由水性分散 液乾燥而成的PEDT/PSS/PSSA極容易地再分散於水中。如 實例9般,將PEDT/PSS/PSSA塗佈在ITO上。利用X射線光 電子能譜儀(XPS)測試頂部表面》測得銦及錫元素,指示ITO 〇 \88\88435 DOC -43- 1327152 係受到pH為〜1之水性PEDT/PSS/PSSA分散液的攻擊。 實例10-12 這些實例說明PEDT/Nafion®在多層塗層中之用途。 實例10 此實例說明利用水性PEDT/Nafion®之多層塗層形成較 厚層。 以800 rpm的旋轉速度,將依與實例7相同的方式所製得 之水性PEDT/Nafion®分散液連續旋轉塗佈三次。各次旋轉 塗佈之間,在真空中90°C下烘烤澆鑄膜。以Tencor輪廓描 繪儀量取厚度,取兩次測量之平均。 烘烤後,第一層=99毫微米。 烘烤後,第二層(總厚度)= 203毫微米。 烘烤後,第三層(總厚度)=322毫微米。 厚度數據清楚說明各沉積厚度係約1 〇〇毫微米。此外,數據 也顯示乾PEDT/Nafion®膜不可再分散於水中。 實例11 此實例說明PEDT/NaHon®在具有兩缓衝層之OLED中的 用途,其中PEDT/Nafion®係與ITO陽極接觸。 使用兩種水性PEDT分散液建構發光測試用之雙緩衝 層。一種是對照實例4中所描述之CH8000(批號為 KIM4952)。另一種為實例7所描述之水性PEDT/Nafion®。 清理ITO厚度為100至150毫微米且ITO發光面積為15釐米 x20釐米之玻璃/ITO基板(30釐米x30釐米),接著以氧電漿處 理之。先將水性PEDT/Nafion®分散液旋轉塗佈在ITO/玻璃 OA88\88435.DOC -44- 1327152 基板上,接著在真空中90°C下烘烤30分鐘。然後將CH8000 塗佈在PEDT/Nafion®層頂面上,接著在真空中90°C下烘烤 30分鐘。雙層總厚度為86毫微米。然後將BP-79(Dow化學 公司,藍色發光聚合物)之二曱苯溶液(1_2%重量/重量)塗佈 在雙缓衝層頂面上。BP-79層的厚度是70毫微米。然後在 lxlO·6托的真空度下將LiF、Ca及最後將鋁分別以2毫微米、The OLED grade Baytron-P is an aqueous poly(3,4-ethylenedioxythiophene) made from polystyrenesulfonic acid (pss A). Has been selected 1'. ? £01' right? The ratio of 33 and polystyrene sulfonate (PSS) is 1:20 (weight/weight). The pH of PEDT/PSS/PSSA is in the range 1. PEDT/PSS/PSSA, which is dried from an aqueous dispersion under ambient conditions, is easily redispersed in water. PEDT/PSS/PSSA was coated on ITO as in Example 9. Indium and tin were measured by X-ray photoelectron spectroscopy (XPS) on top surface, indicating that ITO 〇\88\88435 DOC -43-1327152 was attacked by aqueous PEDT/PSS/PSSA dispersion with pH ~1 . Examples 10-12 These examples illustrate the use of PEDT/Nafion® in multilayer coatings. Example 10 This example illustrates the formation of a thicker layer using a multilayer coating of aqueous PEDT/Nafion®. The aqueous PEDT/Nafion® dispersion prepared in the same manner as in Example 7 was continuously spin-coated three times at a rotation speed of 800 rpm. The cast film was baked at 90 ° C in a vacuum between each spin coating. The thickness was measured with a Tencor profiler and the average of the two measurements was taken. After baking, the first layer = 99 nm. After baking, the second layer (total thickness) = 203 nm. After baking, the third layer (total thickness) = 322 nm. The thickness data clearly indicates that each deposition thickness is about 1 〇〇 nanometer. In addition, the data also shows that dry PEDT/Nafion® membranes are no longer dispersible in water. Example 11 This example illustrates the use of PEDT/NaHon® in an OLED with two buffer layers, where the PEDT/Nafion® system is in contact with the ITO anode. Two aqueous PEDT dispersions were used to construct a double buffer layer for luminescence testing. One is the CH8000 (batch number KIM4952) described in Comparative Example 4. The other is the aqueous PEDT/Nafion® described in Example 7. A glass/ITO substrate (30 cm x 30 cm) having an ITO thickness of 100 to 150 nm and an ITO light-emitting area of 15 cm x 20 cm was cleaned and then treated with oxygen plasma. The aqueous PEDT/Nafion® dispersion was first spin coated onto an ITO/glass OA88\88435.DOC-44- 1327152 substrate and then baked at 90 ° C for 30 minutes in vacuum. The CH8000 was then coated on the top surface of the PEDT/Nafion® layer and then baked at 90 ° C for 30 minutes in a vacuum. The total thickness of the double layer is 86 nm. A solution of BP-79 (Dow Chemical Co., Blue Luminescent Polymer) in diphenylbenzene (1_2% w/w) was then applied to the top surface of the double buffer layer. The thickness of the BP-79 layer is 70 nm. Then, under the vacuum of lxlO·6 Torr, LiF, Ca and finally aluminum were respectively 2 nm.

20毫微米及500毫微米的厚度氣相沉積在BP-79層上。由雙 層結構物製得之裝置的初效率為2.9至3.5燭光/安培,初操 作電壓為3.8至3.9伏特。在室溫下,裝置的半衰期為307小 時。 這說明PEDT/Nafion®作為ITO之鈍化層的實用性。 實例12 此實例說明PEDT/Nafion®在具有兩缓衝層之OLED中的 用途,其中PEDT/Nafion®係與EL層接觸。 如實例11所描述般將CH8000(批號為KIM4952)旋轉塗佈 在ITO/玻璃基板上,接著在空氣中加熱板上200°C下烘烤3 f 分鐘。該層厚度為85毫微米。然後將水性PEDT/Nafion®塗 佈在CH8000層頂面上,接著在真空中90°C下烘烤30分鐘。 PEDT/Nafion®層的厚度是21毫微米。然後將BP-79(Dow化 學公司,藍色發光聚合物)之二曱苯溶液(1.2%重量/重量) 塗佈在雙緩衝層頂面上。BP-79層的厚度是70毫微米。然後 在lxl(T6托的真空度下將LiF、Ca及最後將鋁分別以2毫微 米、20毫微米及500毫微米的厚度氣相沉積在BP-79層上。 由雙層結構物所製得之裝置的初效率為2.5至3.1燭光/安 0 \88\88435 DOC -45- 1327152 培,初操作電壓為4.1至4.2伏特。室溫下,裝置的半衰期為 54小時。這類似單獨以CH8000所製得裝置的壽命並遠低於 實例1 1所述的半衰期。這比較說明與ITO基板接觸之 PEDT/Nafion®的鈍化功能。 實例13 此實例說明利用PEDT/Nafion®缓衝層及綠色發光聚合 物之OLED裝置的較佳操作壽命。 OLED裝置的製造如下:以溶劑及氧電漿清理具有15釐米 x20釐米ITO面積之30釐米x30釐米玻璃基板。ITO層為 100-150毫微米厚。在空氣中將水性PEDT/Nafion®分散液旋 轉塗佈在ITO/玻璃基板上並在真空中90°C下烘烤30分鐘。 此乾膜的厚度係在50-100毫微米範圍内。然後將這些基板 移入充滿氮氣且氧與水量為〜1 ppm之乾燥箱中。將發光聚 合物,DOW綠色K2(密西根州Midland之Dow化學公司)旋 轉塗佈在PEDT/Nafion®層頂面上。D〇W K2溶液為~1%固體 於二曱苯溶劑中。然後這些膜再次在乾燥箱中130°C下烘烤 5分鐘。K2層的厚度為〜75毫微米。然後將這些基板移入熱 蒸鍍器中並在近1X1 (T6托之真空度下沉積陰極。陰極係由~5 毫微米Ba,接著〜0.5微米A1組成。最後從乾燥箱中移出這 些裝置並在環境室中進行操作壽命測試之前密封之。這些 顯示器之操作壽命測試條件為:初亮度200燭光/平方米、 DC固定電流、80°C之測試溫度(為了加速測試程序)。 結果係以圖形表示於圖5中。具有PEDT/Nafion®之顯示 器所估計的壽命係比具PEDT/PSSA之顯示器長近10倍。 a\SS诏8435 DOC -46- 1327152 PEDT/Nafion®的初操作電壓係低約〜10%。而且,電壓增加 率係低約〜25%。 實例14 此實例說明利用PEDT/Nafion®緩衝層及紅色發光聚合 物之OLED裝置的較佳操作壽命。 OLED裝置的製造如下:以溶劑及氧電漿清理具有15釐米 x20釐米ITO面積之30釐米x30釐米玻璃基板。ITO層為 100-150毫微米厚。在空氣中將水性PEDT/NaHon®分散液旋 轉塗佈在ITO/玻璃基板上並在真空中90°C下烘烤30分鐘。 此乾膜的厚度係在50-1 00毫微米範圍内。然後將這些基板 移入充滿氮氣且氧與水量為〜1 ppm之乾燥箱中。將發光聚 合物,AEF 2 1 57(德國Frankfurt之Covion GmbH)旋轉塗佈在 PEDT/Nafion®層頂面上。AEF 2157溶液為〜1%固體於甲苯 溶劑中。然後這些膜再次於乾燥箱中1 30°C下烘烤5分鐘。 AEF 2 15 7層的厚度為〜75毫微米。然後將這些基板移入熱蒸 鍍器中並在近lxl(T6托之真空度下沉積陰極。陰極係由〜5 毫微米Ba,接著〜0.5微米Α1所組成。最後從乾燥箱中移出 這些裝置並在環境室中進行操作壽命測試前密封之。這些 顯示器得操作壽命測試條件為:初亮度170燭光/平方米、 DC固定電流、80°C之測試溫度(為了加速測試程序)。 結果係以圖形表示於圖6中。具PEDT/Nafion®之顯示器 所估計的壽命係比具PEDT/PSSA之顯示器長近4倍。 PEDT/Nafion®的初操作電壓係低約〜20%。而且,電壓增力σ 率係低約>3倍。 〇 \88\88435 DOC -47- 1327152 實例15 此貫例说明利用PEDT/Nafion®緩衝層及藍色發光聚合 物之OLED裝置的較佳操作壽命。 OLED裝置的製造如下:以溶劑及氧電漿清理具有15釐米 X20髮米ITO面積之30釐米χ3〇釐米玻璃基板。IT〇層為 100-150毫微米厚。在空氣中將水性1>£]〇171^^!1〇11@分散液旋 轉塗佈在1丁〇/玻璃基板上並在真空中9〇t下烘烤3〇分鐘。 此乾膜厚度係在50-1 〇〇毫微米範圍内。然後將這些基板移 入充滿氮氣且氧與水量為〜i ppm之乾燥箱中。將發光聚合 物,SCB-11(密西根州Midland2D〇wK學公司)旋轉塗佈在 PEDT/Nafi0n®層頂面上。SCB_n溶液為〜1%固體於二甲苯 溶劑中。然後這些膜再次於乾燥箱中13(rc下烘烤5分鐘。 SCB-11層的厚度為〜75毫微米。然後將這些基板移入熱蒸鍍 益中並在近1x1 〇·6托之真空度下沉積陰極。陰極係由〜2毫微 米LiF,接著20毫微米Ca,然後〜〇.5微米A1組成。最後從乾 燥箱中移出這些裝置並在環境室中進行操作壽命測試之前 密封之。這些顯示器的操作壽命測試條件為:初亮度170燭 光/平方米、DC固定電流、8〇°c之測試溫度(為了加速測試 程序)。 結果係以圖形表示於圖7中。具pEDT/Nafi〇n⑧之顯示器 所估計的壽命係比具PEDT/psSA之顯示器長近1〇倍。 PEDT/Nafi〇n®之初操作電壓係低約〜2〇%。而且,電壓增加 率係低超過6倍。 實例16-21A thickness of 20 nm and 500 nm was vapor deposited on the BP-79 layer. The device made from the two-layer structure has an initial efficiency of 2.9 to 3.5 candelas per amp and an initial operating voltage of 3.8 to 3.9 volts. At room temperature, the device has a half-life of 307 hours. This illustrates the practicality of PEDT/Nafion® as a passivation layer for ITO. Example 12 This example illustrates the use of PEDT/Nafion® in an OLED having two buffer layers, wherein the PEDT/Nafion® is in contact with the EL layer. CH8000 (batch number KIM4952) was spin coated onto an ITO/glass substrate as described in Example 11, followed by baking at 200 ° C for 3 f minutes on a hot plate in air. This layer has a thickness of 85 nm. The aqueous PEDT/Nafion® was then applied to the top surface of the CH8000 layer and then baked at 90 ° C for 30 minutes in a vacuum. The thickness of the PEDT/Nafion® layer is 21 nm. A solution of BP-79 (Dow Chemical Co., Blue Luminescent Polymer) in diphenylbenzene (1.2% w/w) was then applied to the top surface of the double buffer layer. The thickness of the BP-79 layer is 70 nm. Then, LiF, Ca, and finally aluminum were vapor-deposited on the BP-79 layer at a thickness of 2 nm, 20 nm, and 500 nm, respectively, under a vacuum of T6 Torr. The initial efficiency of the resulting device is 2.5 to 3.1 candelas / ampere 0 \88 \88435 DOC -45 - 1327152 ps, the initial operating voltage is 4.1 to 4.2 volts. At room temperature, the half-life of the device is 54 hours. This is similar to CH8000 alone. The lifetime of the device produced was much lower than the half-life described in Example 11. This comparison illustrates the passivation function of PEDT/Nafion® in contact with the ITO substrate. Example 13 This example illustrates the use of a PEDT/Nafion® buffer layer and green light. A preferred operational life of a polymer OLED device. The OLED device is fabricated as follows: a 30 cm x 30 cm glass substrate having an ITO area of 15 cm x 20 cm is cleaned with a solvent and oxygen plasma. The ITO layer is 100-150 nm thick. The aqueous PEDT/Nafion® dispersion was spin coated onto the ITO/glass substrate in air and baked in vacuum for 30 minutes at 90° C. The thickness of the dry film was in the range of 50-100 nm. The substrate is filled with nitrogen and the amount of oxygen and water is ~1 pp In a dry box of m. The luminescent polymer, DOW Green K2 (Dow Chemical Company, Midland, Michigan) was spin coated onto the top surface of the PEDT/Nafion® layer. The D〇W K2 solution was ~1% solids in the second layer. The benzene solvent was then baked again in a dry box at 130 ° C for 5 minutes. The thickness of the K 2 layer was ~ 75 nm. These substrates were then transferred into a thermal evaporator at approximately 1×1 (T6 Torr vacuum) The cathode is deposited. The cathode consists of ~5 nm Ba, then ~0.5 μm A1. Finally, these devices are removed from the oven and sealed before operating life testing in the environmental chamber. The operating life test conditions for these displays are : Initial brightness of 200 candelas per square meter, DC fixed current, test temperature of 80 ° C (to speed up the test procedure). The results are graphically represented in Figure 5. Estimated life ratios for displays with PEDT/Nafion® The display of PEDT/PSSA is nearly 10 times longer. a\SS诏8435 DOC -46- 1327152 The initial operating voltage of PEDT/Nafion® is about ~10% lower. Moreover, the voltage increase rate is about ~25% lower. Example illustrates the use of PEDT/Nafion® buffer layer and red Preferred Operating Life of OLED Devices for Luminescent Polymers OLED devices are fabricated as follows: a 30 cm x 30 cm glass substrate having an ITO area of 15 cm x 20 cm is cleaned with solvent and oxygen plasma. The ITO layer is 100-150 nm thick. The aqueous PEDT/NaHon® dispersion was spin coated onto the ITO/glass substrate in air and baked in vacuum at 90 ° C for 30 minutes. The thickness of this dry film is in the range of 50-1 000 nm. The substrates were then transferred to a dry box filled with nitrogen and having an oxygen and water content of ~1 ppm. The luminescent polymer, AEF 2 1 57 (Covion GmbH, Frankfurt, Germany), was spin coated onto the top surface of the PEDT/Nafion® layer. The AEF 2157 solution was ~1% solids in toluene solvent. The films were then baked again in a dry box at 1 30 ° C for 5 minutes. AEF 2 15 7 layers have a thickness of ~75 nm. The substrates were then transferred into a thermal evaporator and the cathode was deposited at approximately 1 x 1 (T6 Torr vacuum. The cathode consisted of ~5 nm Ba, then ~0.5 micron Α1. Finally, these devices were removed from the dry box and Sealed before the operational life test in the environmental chamber. The operating life test conditions of these displays are: initial brightness of 170 candelas per square meter, DC fixed current, and test temperature of 80 ° C (in order to speed up the test procedure). Shown in Figure 6. The life expectancy of a display with PEDT/Nafion® is nearly four times longer than that of a display with PEDT/PSSA. The initial operating voltage of PEDT/Nafion® is about ~20% lower. The σ rate is about > 3 times. 〇\88\88435 DOC -47- 1327152 Example 15 This example illustrates the preferred operational lifetime of an OLED device utilizing a PEDT/Nafion® buffer layer and a blue light emitting polymer. The manufacture is as follows: a 30 cm χ 3 cm glass substrate having an ITO area of 15 cm X 20 mils is cleaned with a solvent and an oxygen plasma. The IT 〇 layer is 100-150 nm thick. The water is 1 gt; £] 〇 171 ^^!1〇11@Dispersion spray coating Bake on a 1 〇/glass substrate and vacuum for 9 〇t for 3 〇t. The dry film thickness is in the range of 50-1 〇〇 nanometer. The substrates are then filled with nitrogen and the amount of oxygen and water is ~i ppm in a dry box. The luminescent polymer, SCB-11 (Midland 2D〇wK, Michigan), was spin coated onto the top surface of the PEDT/Nafi0n® layer. The SCB_n solution was ~1% solids in xylene solvent. Then, the films were again baked in a dry box at 13 (5 minutes under rc. The thickness of the SCB-11 layer was ~75 nm. These substrates were then transferred to the thermal evaporation and near 1x1 〇6 Torr. The cathode was deposited under vacuum. The cathode consisted of ~2 nm LiF followed by 20 nm Ca and then ~5 μm A1. Finally, these devices were removed from the dry box and sealed before operating life testing in the environmental chamber. The operational life test conditions of these displays are: initial brightness of 170 candelas per square meter, DC fixed current, and test temperature of 8 〇 °c (in order to speed up the test procedure). The results are graphically represented in Figure 7. With pEDT/Nafi 〇n8 display estimated life ratio is P The display of EDT/psSA is nearly 1 times longer. The initial operating voltage of PEDT/Nafi〇n® is about ~2〇% lower, and the voltage increase rate is more than 6 times lower. Example 16-21

0\88\88435.DOC -48· 1327152 這些實例說明pH對不同PEDT緩衝層之作用β 實例16 此實例說明PEDT/Nafion®的製備。Nafi〇n®是利用類似 美國專利第6,1 50,42ό號’實例9之程序所製得ew為1050之 12.5%(重量/重量)水性膠體分散液。 將150.90克(17.25毫莫耳之Nafion®單體單位)Nafion® (1050 EW)水性膠體分散液(12%,重量/重量)及235.1 1克去 離子水集中在500毫升Nalgene®塑膠瓶中,然後滾動約2小 時。然後將稀膠體分散液移至5 0 0毫升套層三頸圓底燒瓶 中。由於轉移中損失小量分散液,只有146 18克^^负〇11⑧轉 移’反應燒瓶中約有16.71毫莫耳Nafion®。先藉去離子水 >谷解0.0339克硫酸鐵水合物(97%,Aldrich型錄編號為 30,771-8)製成總重量為3.285克之硫酸鐵儲備溶液。然後將 1.50克(0.03 15毫莫耳)硫酸鐵溶液及1 76克(7.392毫莫耳)過 硫自文納(F1U k a,型錄編號為718 9 9)放入反應燒瓶中並授摔混0\88\88435.DOC -48· 1327152 These examples illustrate the effect of pH on different PEDT buffer layers. Example 16 This example illustrates the preparation of PEDT/Nafion®. Nafi〇n® is a 12.5% (w/w) aqueous colloidal dispersion having an ew of 1050, which is similar to the procedure of Example 9 of U.S. Patent No. 6,150,42. 150.90 g (17.25 mmol of Nafion® monomer unit) Nafion® (1050 EW) aqueous colloidal dispersion (12%, weight/weight) and 235.1 1 gram of deionized water were concentrated in 500 ml Nalgene® plastic bottles. Then roll for about 2 hours. The dilute colloidal dispersion was then transferred to a 500 ml jacketed three-necked round bottom flask. Due to the loss of a small amount of dispersion in the transfer, only 146 18 grams of ^ 〇 〇 118 transferred to the reaction flask was approximately 16.71 millimoles Nafion®. An iron sulfate stock solution having a total weight of 3.285 grams was prepared by deionized water > glutamine 0.0339 g of iron sulfate hydrate (97%, Aldrich model number 30,771-8). Then 1.50 g (0.03 15 mmol) of ferric sulfate solution and 1 76 g (7.392 mmol) of sulfur per fluent (F1U k a, catalog number 718 9 9) were placed in the reaction flask and mixed

合物。然後隨攪拌加入0.647毫升(6.071毫莫耳)837的11-1^ 之前,攪拌混合物5分鐘《隨著攪拌令聚合作用在藉由循環 流體所控制之約20°C下進行。聚合液體在5分鐘開始轉為藍 色。如實例7般,藉加入20.99克1^\\^出@3100及20.44克 Lewatit®MP62 WS在3.2小時終止反應。使用前,先以去離 子水分別清洗兩樹脂,直到水無任何顏色。此樹脂處理係 進行2 1小時。然後所得泥聚經Whatman,54號渡紙抽氣過 濾。過濾係極容易的。以所加聚合組成份計’固體%為約 4.89%(重量/重量)。 0\88\88435.DOC -49- 1327152 隨去離子水加入255.6克?£〇1'川&负〇11@使總重量為480.8 克以製得2.6%固體(重量/重量)。以購自Corning公司(美國 紐約州Corning)之315pH/離子計量器測得稀水性 PEDT/Nafion® 的 pH為 3.9。 實例17 此實例說明pH為2.2之PEDT/Nafion®分散液的製備。Compound. The mixture was then stirred for 5 minutes before the addition of 0.647 ml (6.071 mmol) of 837 to 1 - 1 ^ with stirring. "The polymerization was carried out at about 20 ° C controlled by the circulating fluid with stirring. The polymerization liquid began to turn blue in 5 minutes. As in Example 7, the reaction was terminated by adding 20.99 g of 1^\\^@3100 and 20.44 g of Lewatit® MP62 WS at 3.2 hours. Before use, wash the two resins separately with deionized water until the water has no color. This resin treatment was carried out for 21 hours. The resulting mud was then collected by Whatman, No. 54 paper, and filtered. Filtration is extremely easy. The solid % was about 4.89% (w/w) based on the added polymer component. 0\88\88435.DOC -49- 1327152 Add 255.6 grams with deionized water? £〇1' Chuan & Negative 11@ makes a total weight of 480.8 grams to make 2.6% solids (weight/weight). The pH of the dilute aqueous PEDT/Nafion® was determined to be 3.9 using a 315 pH/ion meter purchased from Corning Corporation (Corning, NY). Example 17 This example illustrates the preparation of a PEDT/Nafion® dispersion having a pH of 2.2.

利用實例16所製得之稀PEDT/Nafion®作為起始物。加入 3.07克 Dowex 5 50A樹脂(Aldrich型錄編號為 43,660-7) ’ 一種 強鹼陰離子交換樹脂並持續攪拌1.2小時。使用前,先以去 離子水清洗Dowex 550A,直到水無任何顏色。過濾混合物 並在據液中加入3.0克Amberlyst 15(Aldrich型錄編號為 21,639,9 ’質子陽離子交換樹脂),持續攪拌45分鐘並過濾 之。在渡液中加入3.0克新鮮Amberlyst 15,持續授拌15小 時並過渡之以進行OLED測試。使用前,Amberlyst 1 5先以 去離子水清洗數次。測得經Amberlyst 15處理過之水性The dilute PEDT/Nafion® prepared in Example 16 was used as a starting material. 3.07 g of Dowex 5 50A resin (Aldrich model number 43,660-7) was added as a strong base anion exchange resin and stirring was continued for 1.2 hours. Wash Dowex 550A with deionized water before use until the water has no color. The mixture was filtered and 3.0 g of Amberlyst 15 (Aldrich model number 21,639,9 'proton cation exchange resin) was added to the liquid, stirring was continued for 45 minutes and filtered. 3.0 grams of fresh Amberlyst 15 was added to the effluent and the mixing was continued for 15 hours and transitioned for OLED testing. Amberlyst 1 5 is washed several times with deionized water before use. Measured water treated by Amberlyst 15

PEDT/Nafion® 的 pH為 2.2。 實例18 此實例說明pH為4.3之PEDT/Nafion®分散液的製備。 依與實例16相同之方式製備PEDT/Nafion®批次物。以 45.05克去離子將61.〇2克如此製得之分散液稀釋成2.8 %(重 量’重量)。此稀分散液的pH為4.3。 實例19 此實例說明利用鋰鹽製備pH為7.0之PEDT/Nafion®分散 液0 O:\88\SS435 DOC •50· 1327152 將經裡離子中和之PEDT/NaHon®分散液描述於 一 ^ '广。這是 一個兩步驟的程序:先藉與質子交換除去合成留下之殘留 金屬離子;然後利用第二次離子交換以鋰離子交換這此# 子。這獲得南純度分散液。The pH of PEDT/Nafion® is 2.2. Example 18 This example illustrates the preparation of a PEDT/Nafion® dispersion having a pH of 4.3. A PEDT/Nafion® batch was prepared in the same manner as in Example 16. 61. 2 g of the thus obtained dispersion was diluted to 2.8% by weight (by weight & weight) with 45.05 g of deionized. The pH of this dilute dispersion was 4.3. EXAMPLE 19 This example illustrates the preparation of a PEDT/Nafion® dispersion having a pH of 7.0 using a lithium salt. 0 O:\88\SS435 DOC • 50· 1327152 The PEDT/NaHon® dispersion neutralized by ionic ions is described in a wide range. . This is a two-step procedure: first removing the residual metal ions left by the synthesis by proton exchange; then using a second ion exchange to exchange the ions with lithium ions. This gives a southern purity dispersion.

先以5.13克Dowex 550A樹脂(Aldrich型錄編號為 43,660-7),一種強鹼陰離子交換樹脂處理如實例16所播述 之稀PEDT/Nafion®並持續攪拌2小時。使用前,先以去離 子水清洗Dowex 550A直到水無任何顏色。過濾混合物並以 4.13克八1^61^3115(八1把〇11型錄編號為21,63 9,9,質子陽離 子交換樹脂)處理遽液,持續搜拌1 〇小時並過濾之。然後加 入3.14克新鮮Amberlyst 15並持續攪拌1.5小時。最後過據分 散液。 然後以 1.99克、2.33 克、2.06克、2.08克及 2·00克 Amberlyst 15之鋰鹽處理37.82克酸化PEDT/Nafion®。更換各新鮮 Amberlyst 1 5鋰鹽之間,過濾混合物。而且,在各次過濾之The dilute PEDT/Nafion® as described in Example 16 was first treated with 5.13 grams of Dowex 550A resin (Aldrich Model No. 43,660-7), a strong base anion exchange resin and stirring was continued for 2 hours. Wash Dowex 550A with deionized water until any color is present in the water before use. The mixture was filtered and treated with 4.13 g of 八1^61^3115 (8, 1 〇11 type number 21, 63 9,9, proton cation exchange resin), and the mixture was continuously mixed for 1 hr and filtered. Then 3.14 grams of fresh Amberlyst 15 was added and stirring was continued for 1.5 hours. Finally, the data was separated. 37.82 grams of acidified PEDT/Nafion® was then treated with 1.99 grams, 2.33 grams, 2.06 grams, 2.08 grams, and 20.00 grams of Amberlyst 15 lithium salt. Replace each fresh Amberlyst 1 5 lithium salt and filter the mixture. Moreover, in each filter

間攪拌混合物,總樹脂處理時間為7小時。測得經處理過之 Nafion® 的 pH為 7.0。 實例20 此實例說明利用鈉鹽製備pH為7·2之PEDT/Nafion®分散 液。 福述經納離子中和之PEDT/Nafion®分散液。起始物是實 例1 6中所描述之鋰離子分散液。如下所描述般另外處理將 裡離子換成鈉離子。這獲得高純度的分散液。 先以 2.76克、3.57克 ' 3.55 克及 3.25 克 Lewatit® S100處理 O:\88\88435.DOC -51 · 1327152 實例16所描述之稀PEDT/Nafion®。更換各新鮮樹脂之間, 過濾混合物。而且,在各次過濾之間攪拌混合物,總樹脂 處理時間為7小時。測得經處理過之Nafion®的pH為7.2。 對照實例5 此對照實例說明具改良pH值之PEDT/PSSA分散液的製 備。The mixture was stirred and the total resin treatment time was 7 hours. The pH of the treated Nafion® was determined to be 7.0. Example 20 This example illustrates the preparation of a PEDT/Nafion® dispersion having a pH of 7.2 using a sodium salt. The PEDT/Nafion® dispersion neutralized by Nanoparticles. The starting material was the lithium ion dispersion described in Example 16. Additional treatment of the ions is replaced by sodium ions as described below. This gives a high purity dispersion. Treatment of 2.76 g, 3.57 g '3.55 g and 3.25 g Lewatit® S100 O:\88\88435.DOC -51 · 1327152 The dilute PEDT/Nafion® described in Example 16. The mixture was filtered between each fresh resin. Further, the mixture was stirred between each filtration, and the total resin treatment time was 7 hours. The pH of the treated Nafion® was measured to be 7.2. Comparative Example 5 This comparative example illustrates the preparation of a PEDT/PSSA dispersion having an improved pH.

樣品對照5-ASample Control 5-A

PEDT/PSSA(AI4083 > 一種購自德國 Leverkusen之 Η· C. Starck GmbH 的 OLED級 Baytron-P)具有 1.8之 pH。PEDT/PSSA (AI4083 > an OLED grade Baytron-P from C. Starck GmbH, Leverkusen, Germany) has a pH of 1.8.

樣品對照5-BSample Control 5-B

以24小時隨總量為10克Amberly st 15經鹽加入58.9克去 離子AI4083(購自H. C. Starck,如去離子AI4083)。整段時 間期間攪拌混合物。過濾混合物,測得所收集濾液之pH為 3.2。 樣品對照5-C58.9 grams of deionized AI4083 (purchased from H. C. Starck, such as deionized AI4083) was added via salt to a total of 10 grams of Amberly St 15 over 24 hours. The mixture was stirred during the entire time. The mixture was filtered and the pH of the collected filtrate was measured to be 3.2. Sample Control 5-C

以約1 8小時隨總量為14克Amberly st 15鋇鹽加入58.18克 去離子AI4083。整段時間期間攪拌混合物。過濾混合物, 測得所收集濾液之pH為3.4。58.18 grams of deionized AI4083 was added over a period of about 18 hours with a total of 14 grams of Amberly st 15 钡 salt. The mixture was stirred during the entire time. The mixture was filtered and the pH of the collected filtrate was measured to be 3.4.

樣品對照5-D 使用購自H. C. Starck GmbH應不含鈉之去離子AI4083以 轉化成四丁基铵鹽。以20小時隨總量為約9克Amberlyst 1 5 之四丁基銨鹽加入50.96克去離子AI4083。整段時間期間攪 拌混合物。過濾混合物,測得所收集濾液之pH為4.3。 同樣地,以鋰及鉋離子交換樹脂處理AI4083樣品,另外 0\88\88435.DOC -52· 1327152 產生兩系列ρ Η值大於1, 8之樣品。 實例21 此實例說明利用實例16-2 1及對照實例5之分散液製得緩 衝層所製成的OLED性能。 這些裝置係依類似實例6所描述之方式製得。 使用下列EL聚合物: 名稱 聚合物類型 製造商 超黃 PPV Covion 藍 BP79 聚芴 Dow 綠K2 聚芴 Dow AEF 2198 聚螺 Covion 其中π聚螺”相當於聚螺-二芴。 圖8(a)至8(c)顯示包含PEDT/PSSΑ缓衝層且pH經過調整 之PLED的初裝置性能。清楚地,增加Baytron-P之pH至遠 高於2_5時明顯降低OLED裝置的性能。圖8(a)及8(b)比較 Baytron-P AI4071 與 Baytron-P AI4083,兩種類似產品但具 有不同導電度。他們的pH已利用鈉離子交換樹脂調整過。 圖8(c)與8(d)顯示鋰及鉋離子交換樹脂分別造成某些現象 發生。 圖9(a)至9(c)顯示包含PEDT/Nafion®緩衝層且pH經過調 整之OLED的初裝置性能。不像包含PEDT/PSSA的裝置,這 些裝置不因pH中性緩衝層而降解。 為了評估操作壽命,以固定DC電流操作裝置,獲得200 燭光/平方米之初亮度並將其放在烘箱中80°C下以加速其 O:\88\88435.DOC -53- 1327152 降解。持續監測裝置在光輸出及操作電壓上的變化。操作 壽命係定義為亮度掉至其原值一半(即至100燭光/平方米) 的時間。結果係提供於下表3中。 表3.裝置的操作壽命 壽命,小時 緩衝層 EL聚合物 緩衝層之pH 1.8-2.0 3.2 3.4 3.8-4.3 6.8-7.0 PEDT/Nafion 超黃 200-250 200-240 PEDT/Nafion 綠K2 900-1100 900-1100 900-1100 PEDT/Nafion AEF2198 300-400 400 PEDT/PSSA 超黃 200-250 46 4 氺氺 PEDT/PSSA 綠Κ2 400 ** 氺氺 **指示裝置不亮 清楚地,PEDT/PSSA裝置只在窄pH範圍(ρΗ<~2·5)有良好 壽命,反之PEDT/Nafion®裝置可在極寬廣的pH範圍(至少 pH 1.8-7.0)内操作。 實例22 此實例說明PEDT/Nafion®不蝕刻ITO接觸點。 ITO測試基板的製備如下:塗有〜1300埃ITO之玻璃基板 係由Applied膜公司獲得。ITO層係被蝕刻成具有300微米寬 ITO條之長條圖案。這些長條延伸至整個ITO層深度,因此 露出長條間之基板玻璃。這些條具有輪廓分明之邊緣。垂 直重複性為~ 1 0埃之Tencor輪廓描繪儀係用於測量ITO條的 高度。在室溫下將樣品浸在CH8000或PEDOT : NAFION中 不同時間。測量ITO厚度之前,以DI水清洗樣品並以電漿蝕 刻1 5分鐘以除去任何有機殘留物。在各例中,在2不同基板 上測量4條ITO的厚度,各測量總共獲得8個數據點。 PEDT/Nafion®溶液係如實例7中所描述般製得,而其pH為 O:\88\88435.DOC •54- 1327152 3_8。PEDT/PSSA溶液是 pH為約 1 之 Baytron CH 8000。結果 係表示於圖10中。注意浸在PEDT/PSSA中24小時後,ITO 的厚度減少〜1 %。這在ITO膜之光學介面顏色中清楚可見。 在裝置的製造中,ITO暴露在液體PEDT/PSSA中一般只持續 數秒。但是,PEDT/PSSA膜中的殘留水分將在整個裝置壽 命期間永久腐蝕ITO。1%ΙΤΟ層的溶解將在PEDT/PSSA中產 生高濃度銦及錫離子。 實例23The sample control 5-D was purchased from H. C. Starck GmbH and should be free of sodium deionized AI4083 for conversion to the tetrabutylammonium salt. 50.96 grams of deionized AI4083 was added over 20 hours with a total of about 9 grams of Amberlyst 1 5 tetrabutylammonium salt. The mixture was stirred throughout the time. The mixture was filtered and the pH of the collected filtrate was determined to be 4.3. Similarly, AI4083 samples were treated with lithium and planer ion exchange resins, and another 0\88\88435.DOC -52· 1327152 produced two series of samples with ρ Η values greater than 1,8. Example 21 This example illustrates the performance of an OLED produced by using the dispersion of Example 16-2 1 and Comparative Example 5 to prepare a buffer layer. These devices were prepared in a manner similar to that described in Example 6. The following EL polymers were used: Name Polymer Type Manufacturer Super Yellow PPV Covion Blue BP79 Poly 芴 Dow Green K2 Poly 芴 Dow AEF 2198 Poly Helox Covion where π snail is equivalent to poly snail - bismuth. Figure 8 (a) to 8(c) shows the initial device performance of a PLED containing a PEDT/PSS buffer layer and pH adjusted. Clearly, increasing the pH of Baytron-P to much higher than 2_5 significantly reduces the performance of the OLED device. Figure 8(a) And 8(b) compare Baytron-P AI4071 with Baytron-P AI4083, two similar products but with different conductivity. Their pH has been adjusted with sodium ion exchange resin. Figures 8(c) and 8(d) show lithium And the planer ion exchange resin caused some phenomena, respectively. Figures 9(a) to 9(c) show the initial device performance of a pH-adjusted OLED containing a PEDT/Nafion® buffer layer. Unlike devices containing PEDT/PSSA, These devices are not degraded by the pH neutral buffer layer. To evaluate the operating life, a fixed DC current operating device is used to obtain an initial brightness of 200 candelas per square meter and placed in an oven at 80 ° C to accelerate its O:\ 88\88435.DOC -53- 1327152 Degradation. Continuous monitoring device in light output and operation The change in pressure is defined as the time when the brightness falls to half of its original value (ie, to 100 candelas per square meter). The results are provided in Table 3. Table 3. Operating life of the device, hour buffer layer EL polymer buffer layer pH 1.8-2.0 3.2 3.4 3.8-4.3 6.8-7.0 PEDT/Nafion Ultra-yellow 200-250 200-240 PEDT/Nafion Green K2 900-1100 900-1100 900-1100 PEDT/Nafion AEF2198 300-400 400 PEDT/PSSA Super Yellow 200-250 46 4 氺氺PEDT/PSSA Green Κ 2 400 ** 氺氺 ** The indicator does not illuminate clearly, the PEDT/PSSA unit only has a narrow pH range (ρΗ<~2·5) Good life, whereas PEDT/Nafion® units operate over a wide pH range (at least pH 1.8-7.0). Example 22 This example shows that PEDT/Nafion® does not etch ITO contacts. The ITO test substrate is prepared as follows: The 1300 ITO glass substrate was obtained from Applied Films Inc. The ITO layer was etched into a strip pattern having 300 micron wide ITO strips. These strips extended to the depth of the entire ITO layer, thus exposing the substrate glass between the strips. These strips have a well-defined edge. The Tencor profiler with a vertical repeatability of ~10 angstroms is used to measure the height of the ITO strip. Immerse the sample in CH8000 or PEDOT: NAFION at room temperature for different times. Prior to measuring the ITO thickness, the sample was rinsed with DI water and plasma etched for 15 minutes to remove any organic residue. In each of the examples, the thickness of four ITOs was measured on two different substrates, and a total of eight data points were obtained for each measurement. The PEDT/Nafion® solution was prepared as described in Example 7, and its pH was O:\88\88435.DOC • 54-1327152 3_8. The PEDT/PSSA solution is a Baytron CH 8000 having a pH of about 1. The results are shown in Figure 10. Note that after immersion in PEDT/PSSA for 24 hours, the thickness of ITO is reduced by ~1%. This is clearly visible in the optical interface color of the ITO film. In the manufacture of devices, ITO is typically exposed to liquid PEDT/PSSA for only a few seconds. However, residual moisture in the PEDT/PSSA film will permanently corrode ITO throughout the life of the unit. Dissolution of the 1% ruthenium layer will produce high concentrations of indium and tin ions in the PEDT/PSSA. Example 23

此實例說明水性PEDT/Nafion®分散液與PEDT/PSSA之 相容性^ 選擇PEDT/PSSA(Baytron-P,AI4083級)進行與實例16之水性 PEDT/Nafion®的相容性測試。由 95 : 5 PEDT/Nafion® : AI4083 一直至5 : 95 PEDT/Nafion® : AI4083製備水性摻合物。發現 所有分散液摻合物是均勻且無相分離的。這些摻合物可用 於OLED及其他電性活化裝置的製造。This example illustrates the compatibility of aqueous PEDT/Nafion® dispersions with PEDT/PSSA. PEDT/PSSA (Baytron-P, grade AI4083) was selected for compatibility with the aqueous PEDT/Nafion® of Example 16. An aqueous blend was prepared from 95 : 5 PEDT/Nafion® : AI4083 up to 5 : 95 PEDT/Nafion® : AI4083. All dispersion blends were found to be homogeneous and phase free. These blends are useful in the fabrication of OLEDs and other electrically activated devices.

實例24 此實例說明利用普通陰極金屬及所有顏色之普通緩衝層 聚合物進行彩色OLED顯示器之製造及性能提昇。 OLED裝置的製造如下:以溶劑及氧電漿清理具有1 5釐米 x20釐米ITO面積之30釐米x30釐米玻璃基板。ITO層為 100-150毫微米厚。在空氣中將水性緩衝(如實例16製得之 PEDOT/Nafion® 或 Baytron-P CH8000)分散液旋轉塗佈在 ITO/玻璃基板上並在真空中90°C下烘烤30分鐘。此乾膜厚 度係在50-100毫微米範圍内。然後將這些基板移入充滿氮 〇\SS^&43S.DOC -55- 1327152 氣且氧與水量為〜1 ppm之乾燥箱中。將發光聚合物(紅色: COVION AEF 2198,或綠色:DOW K2或藍色:COVION HS 670)旋轉塗佈在緩衝層頂面上。發光聚合物溶液為〜1 %固體 於普通有機溶劑如甲苯或二甲苯中。然後這些膜第二次於 乾燥箱中130°C下烘烤約5分鐘。發光層的厚度為〜75毫微 米。然後將這些基板移入熱蒸鍍器中並在近托之真空Example 24 This example illustrates the fabrication and performance enhancement of a color OLED display using conventional cathode metal and common buffer layer polymers of all colors. The OLED device was fabricated as follows: a 30 cm x 30 cm glass substrate having an ITO area of 15 cm x 20 cm was cleaned with a solvent and oxygen plasma. The ITO layer is 100-150 nm thick. An aqueous buffer (such as PEDOT/Nafion® or Baytron-P CH8000 prepared in Example 16) was spin coated onto the ITO/glass substrate in air and baked in vacuum at 90 ° C for 30 minutes. This dry film thickness is in the range of 50-100 nm. The substrates were then transferred to a dry box filled with nitrogen 〇\SS^&43S.DOC -55-1327152 and having an oxygen and water content of ~1 ppm. A luminescent polymer (red: COVION AEF 2198, or green: DOW K2 or blue: COVION HS 670) was spin coated onto the top surface of the buffer layer. The luminescent polymer solution is ~1% solids in a common organic solvent such as toluene or xylene. The films were then baked a second time in a dry box at 130 ° C for about 5 minutes. The thickness of the luminescent layer is ~75 nm. The substrates are then moved into a thermal evaporator and placed in a vacuum

度下沉積陰極。陰極係由下列之一組成的:⑴〜5毫微米Ba, 接著〜0.5微米A1,或(ii)〜5毫微米Ca,接著〜0.5微米A1,或 (iii)〜5毫微米LiF,接著〜20毫微米Ca,接著〜0.5微米A1。最 後從乾燥箱中移出這些裝置並在環境室中進行操作壽命測 試之前密封之。這些顯示器的操作壽命測試條件為:初亮 度200燭光/平方米、DC固定電流、80°C之測試溫度(為了加 速測試程序)。結果係提供於下表4中。 表4 聚合物 緩衝層 陰極 電壓(伏特) 效率(燭光/安培) 壽命(小時) 紅色 (AEF2198) CH8000 Ba 4.5 1.4 120 PEDOT/Nafion® Ba 4.0 1.5 500 綠色 (Κ2) CH8000 Ca 3.4 3.2-6.8 400 4 PEDOT/Nafion® Ca 3.0 4.0-6.0 700 ^ PEDOT/Nafion® Ba 2.8 6.0-10.0 >2,000 藍色 (HS670) CH8000 Ba 4.3 4.0-4.5 50 PEDOT/Nafion® LiF/Ca 4.7 4.0-4.5 40 PEDOT/Nafion® Ba 4.0-4.4 4.0-4.5 150 雖然本發明已藉參考其特定具體實施例詳細描述過,應 了解改良及變化係在所描述及主張之精神和範圍内。 實例25 此實例說明於水及共分散液中製備PEDOT/Nafion®分散液。 Nafion®是利用類似美國專利第6,150,426號,實例9之程序 〇Λ88\88435 DOC -56- 1327152 所製得EW為1050之12%(重量/重量)水性膠體分散液。 將 95.41 克(10.89 毫莫耳之 Nafion® 單體單位)Nafi〇n(g)(1〇5〇 EW)水性膠體分散液(12.0%,重量/重量)、18512克去離子 水及14·49克卜丙醇(Aldrich型錄編號49,619-7)集中在5〇〇毫 升套層三頸圓底燒瓶中。加入0.421毫升Baytron_M二氧噻吩 單體之前,先攪拌混合物10分鐘。在加入硫酸鐵及過硫酸 銨之前,攪拌約1小時。先藉去離子水溶解〇 〇722克硫酸鐵 水合物(97% ’ Aldrich型錄編號為30,771-8)製成總重量為 21.44克之硫酸鐵儲備溶液。然後將4.47克(0.0452毫莫耳) 硫酸鐵儲備溶液及1.65克(7.23毫莫耳)過硫酸錄放入反應 燒瓶中並攪拌混合物。在最終聚合液體中,水與丨_丙醇間 之比例為9至5 »然後令聚合作用在受循環流體所控制之約 20°C下隨著攪拌進行。聚合液體立刻開始轉為藍色。17小 時後藉加入 13.89 克 Lewatit®S100及 13.89 克 Lewatit®MP62 WS終止反應。使用前,先以去離子水分別清洗兩樹脂,直 到水無任何顏色。此樹脂處理進行5小時。然後所得泥衆經 Whatman ’ 54號濾紙抽氣過濾。其容易地通過濾紙。以所 加聚合組成份計,固體%為約4.5%(重量/重量 以購自Corning公司(美國紐約州Corning)之315pH/離子 計量器測得PEDOT/Nafion®分散液的pH為5.3。在20.6°C下 以1000 IUD型之FTA T10張力計(芬蘭KSV儀器股份有限公 司)測得表面張力為41_9毫牛頓/米。此表面張力係遠低於如 實例7無利用共分散液所製得之水性PEDOT/Nafion*的表面 張力(〜73毫牛頓/米)。測試此分散液之可濾性。4〇毫升分散 O:\88\88435.DOC -57 - 1327152 液通過0.45微米HV過濾器(Millipore Millex-HV 25釐米,型 錄編號SLHVR25KS)而無改變過濾器。也注意到由流體流動 外觀判斷黏度明顯低於無利用共分散液所製得相同固體% 的黏度。 【圖式簡單說明】 圖1說明包含根據本發明缓衝層之電子裝置的截面圖。 圖2說明包含根據本發明電極之薄膜場效應電晶體的截 面圖。 圖3說明PEDT/Nafion⑧膜之導電度隨聚合反應中氧化劑 對單體之比例變化。 圖4說明PEDT/Nafion®膜之導電度隨聚合反應中 Nafion®對單體之比例變化。 圖5說明具綠色發光聚合物之OLED裝置的操作壽命。 圖6說明具紅色發光聚合物之OLED裝置的操作壽命。 圖7說明具藍色發光聚合物之OLED裝置的操作壽命。The cathode is deposited under the degree. The cathode system consists of one of the following: (1) ~ 5 nm Ba, then ~ 0.5 μm A1, or (ii) ~ 5 nm Ca, then ~ 0.5 μm A1, or (iii) ~ 5 nm LiF, then ~ 20 nm Ca, then ~0.5 micron A1. These devices are finally removed from the dry box and sealed prior to operational life testing in the environmental chamber. The operational life test conditions for these displays are: initial brightness of 200 candelas per square meter, DC fixed current, and test temperature of 80 °C (for accelerated test procedures). The results are provided in Table 4 below. Table 4 Polymer Buffer Layer Cathode Voltage (Volts) Efficiency (Candle/Amp) Life (hours) Red (AEF2198) CH8000 Ba 4.5 1.4 120 PEDOT/Nafion® Ba 4.0 1.5 500 Green (Κ2) CH8000 Ca 3.4 3.2-6.8 400 4 PEDOT/Nafion® Ca 3.0 4.0-6.0 700 ^ PEDOT/Nafion® Ba 2.8 6.0-10.0 > 2,000 Blue (HS670) CH8000 Ba 4.3 4.0-4.5 50 PEDOT/Nafion® LiF/Ca 4.7 4.0-4.5 40 PEDOT/Nafion ® Ba 4.0-4.4 4.0-4.5 150 Although the invention has been described in detail with reference to the specific embodiments thereof, it is understood that modifications and variations are within the spirit and scope of the invention. Example 25 This example illustrates the preparation of a PEDOT/Nafion® dispersion in water and a co-dispersion. Nafion® is a 12% (w/w) aqueous colloidal dispersion having an EW of 1050 prepared by a procedure similar to that of U.S. Patent No. 6,150,426, Example 9, 〇Λ88\88435 DOC-56-1327152. 95.41 g (10.89 mM Nafion® monomer unit) Nafi〇n (g) (1〇5〇EW) aqueous colloidal dispersion (12.0%, weight/weight), 18512 g deionized water and 14.49 Kebpropanol (Aldrich Model No. 49, 619-7) was concentrated in a 5 inch ml three-necked round bottom flask. The mixture was stirred for 10 minutes before adding 0.421 ml of Baytron_M dioxythiophene monomer. Stir for about 1 hour before adding ferric sulfate and ammonium persulfate. First, deionized water was used to dissolve 〇 722 g of iron sulfate hydrate (97% 'Aldrich model number 30, 771-8) to prepare a total weight of 21.44 g of iron sulfate stock solution. Then, 4.47 g (0.0452 mmol) of the iron sulfate stock solution and 1.65 g (7.23 mmol) of persulfuric acid were placed in the reaction flask and the mixture was stirred. In the final polymerization liquid, the ratio of water to 丨-propanol is 9 to 5 » and then the polymerization is carried out with stirring at about 20 ° C controlled by the circulating fluid. The polymerization liquid immediately began to turn blue. After 17 hours, the reaction was terminated by the addition of 13.89 grams of Lewatit® S100 and 13.89 grams of Lewatit® MP62 WS. Before use, wash the two resins separately with deionized water until the water has no color. This resin treatment was carried out for 5 hours. The resulting mud was then filtered through a Whatman's No. 54 filter paper. It easily passes through the filter paper. The pH of the PEDOT/Nafion® dispersion measured at 5% pH/wt by a 315 pH/ion meter available from Corning, Inc. (Corning, NY, USA) was 5.3 at 20.6 percent by weight of the polymerized component. The surface tension was measured to be 41_9 mN/m with a 1000 IUD type FTA T10 Tensiometer (Finnish KSV Instrument Co., Ltd.) at ° C. This surface tension was much lower than that of Example 7 without the use of a co-dispersion. Surface tension of aqueous PEDOT/Nafion* (~73 mN/m). Test the filterability of this dispersion. 4 〇 ml dispersion O:\88\88435.DOC -57 - 1327152 The solution passes through a 0.45 μm HV filter ( Millipore Millex-HV 25 cm, catalog number SLHVR25KS) without changing the filter. It is also noted that the viscosity of the fluid flow is judged to be significantly lower than the viscosity of the same solid % produced without the use of the co-dispersion. [Simplified illustration] BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 illustrates a cross-sectional view of an electronic device comprising a buffer layer in accordance with the present invention. Figure 2 illustrates a cross-sectional view of a thin film field effect transistor comprising an electrode in accordance with the present invention. Figure 3 illustrates the conductivity of a PEDT/Nafion 8 film with an oxidant in a polymerization reaction. Pair The ratio of the body changes. Figure 4 illustrates the conductivity of the PEDT/Nafion® film as a function of the ratio of Nafion® to monomer in the polymerization. Figure 5 illustrates the operational lifetime of an OLED device with a green light-emitting polymer. Figure 6 illustrates red light emission Operating Life of Polymeric OLED Devices Figure 7 illustrates the operational lifetime of an OLED device with a blue light emitting polymer.

圖8(a)至8(d)說明PEDT/PSSA緩衝層之pH對OLED裝置性 能的作用。 圖9(a)至9(c)說明PEDT/Nafion®緩衝層之pH對OLED裝 置性能的作用。 圖10說明浸在PEDT/Nafion®或PEDT/PSSA分散液中 時,ITO厚度的變化。 【圖式代表符號說明】 110 陽極層 120 缓衝層 O:\88\88435 DOC -58- 1327152 130 電致發光層 140 電子注入/傳遞層 150 陰極層 210 介電聚合物;介電氧化物薄膜 220 閘極 230 汲極 240 源極 250 有機半導電膜 O:\88\88435 DOC -59·Figures 8(a) through 8(d) illustrate the effect of the pH of the PEDT/PSSA buffer layer on the performance of the OLED device. Figures 9(a) through 9(c) illustrate the effect of the pH of the PEDT/Nafion® buffer layer on the performance of the OLED device. Figure 10 illustrates the change in ITO thickness when immersed in a PEDT/Nafion® or PEDT/PSSA dispersion. [Description of Symbols] 110 Anode Layer 120 Buffer Layer O:\88\88435 DOC -58- 1327152 130 Electroluminescent layer 140 Electron injection/transport layer 150 Cathode layer 210 Dielectric polymer; Dielectric oxide film 220 Gate 230 Bungee 240 Source 250 Organic Semi Conductive Film O:\88\88435 DOC -59·

Claims (1)

1327152 第 092127470 號專利申請案:η 1 ί- —f.: 中文申請專利範圍替換本(99年f 拾、申請專利範圍:----一一一:-------[:-- 1. 一種组合物’其包含聚二氧Ρ塞吩與至少一種膠體形成氟 化聚酸之水性分散液,其中該膠體形成氟化聚酸包含全 氟乙烯磺酸,而該聚二氧嘧吩是聚(3,4-伸乙二氧基嘍吩)。 2_根據申請專利範圍第1項之組合物,其中該聚二氧噻吩具 有結構:1327152 Patent application No. 092127470: η 1 ί--f.: Chinese patent application scope replacement (99 years f pickup, patent application scope:----11:-------[:- - A composition comprising: an aqueous dispersion of a polyfluorinated phenanthrene and at least one colloid to form a fluorinated polyacid, wherein the colloid forms a fluorinated polyacid comprising perfluoroethylene sulfonic acid, and the polydipyrimidine The phenotype is a poly(3,4-exoethylenedioxy porphin). The composition according to claim 1, wherein the polydioxythiophene has a structure: 其中: 心與1^’係各獨立地選自氫及具有1至4個碳原子之烷 基, 或心與1^’一起形成具有1至4個碳原子之伸烷基鏈,其 可視情況被具有1至12個碳原子冬烷基或芳族基取代,或 1,2 -伸環己基,且 η係大於6。 3. 根據申明專利範圍第i或2項之組合物其中該膠體形成 聚酸係選自聚確酸、聚羧酸及聚磷酸或聚丙烯酸或其混 合物。 4. -種製造聚二氧嘆吩與至少一種說化之谬體形成聚酸之 水性分散液的方法,其包括: (a)提供一水與噻吩之均勻水性混合物; 88435-990127.doc 1327152 (b)提供一該聚酸之水性分散液; (C)將該噻吩混合物與該膠體形成氟化聚酸之水性分散 液合併;並 (d)依任何添加順序將氧化劑與觸媒併入步驟之分散 液中, 其中該聚二氧噻吩為聚(3,4_伸乙二氧基嘍吩)。 5. 6· 7. 根據申請專利範圍第4項之方法,其中該方法另包括該水 性聚P塞吩分散液與至少一種離子交換樹脂接觸,其中該 離子交換樹脂是陽離子交換樹脂、陰離子交換樹脂或其 混合物。 根據申請專利範®第4項之方法,其中該方法中另包含氧 化劑、觸媒、共分散劑、共酸或所有這些附加加工助劑。 根據申請專利範圍第4項之方法,其中在該方法中另包 含: 一氧化劑’其係選自過硫酸鈉、過硫酸鉀、過硫酸銨 或其組合物; 一觸媒’其係選自硫酸鐵、氣化鐵或其混合物; 一共分散劑’其係選自謎、醇、醇醚、環狀酸、酮、 腈、亞减及其組合物; 並另包括該分散液與離子交換樹脂接觸,其中該離子 交換樹脂係選自磺酸化苯乙烯-二乙烯基苯共聚物、項 酸、磺酸化交聯笨乙烯聚合物、笨_曱醛磺酸、羧酸、丙 烯酸、磷酸、三級胺、四級胺陰離子交換樹脂及其混合 物。 零 88435-990l27.doc 屉:有機電子裝置,其包含至少一層有機層,而該有機 :糸由包含聚:氧峰吩與至少—種膠體形錢化聚酸之 機火眭刀散液的組合物所製成,其中該膠體形成氟化 A酸包a全氟乙稀續酸,而該聚二氧〃塞吩是聚(3,4_伸乙 二氧基4吩)。 •根據申請專利範圍第8項之裝置,其中該裝置是一種光感 測器、光電開關、光敏電阻、光電晶體、光電管、爪偵 測器、光伏打電池、太陽能電池、發光二極體、生物感 測器、發光二極體顯示器或二極體雷射。 88435-990127.docWherein: the core and the 1^' are each independently selected from hydrogen and an alkyl group having 1 to 4 carbon atoms, or the core and 1^' together form an alkyl chain having 1 to 4 carbon atoms, as the case may be. It is substituted with a tocolyl group or an aromatic group having 1 to 12 carbon atoms, or a 1,2-cyclohexylene group, and the η system is more than 6. 3. The composition according to claim ii or 2 wherein the colloid-forming polyacid is selected from the group consisting of polyacids, polycarboxylic acids, and polyphosphoric acid or polyacrylic acid or mixtures thereof. 4. A method of making a polydioxane and at least one of the steroids to form an aqueous dispersion of a polyacid comprising: (a) providing a homogeneous aqueous mixture of monohydrate and thiophene; 88435-990127.doc 1327152 (b) providing an aqueous dispersion of the polyacid; (C) combining the thiophene mixture with the colloid to form an aqueous dispersion of the fluorinated polyacid; and (d) incorporating the oxidizing agent and the catalyst in any order of addition In the dispersion, the polydioxythiophene is poly(3,4-extended ethylenedioxy porphin). 5. The method according to claim 4, wherein the method further comprises contacting the aqueous poly P plug dispersion with at least one ion exchange resin, wherein the ion exchange resin is a cation exchange resin, an anion exchange resin Or a mixture thereof. According to the method of claim 4, wherein the method further comprises an oxidizing agent, a catalyst, a co-dispersing agent, a co-acid or all of these additional processing aids. The method of claim 4, wherein the method further comprises: an oxidizing agent selected from the group consisting of sodium persulfate, potassium persulfate, ammonium persulfate or a combination thereof; and a catalyst selected from the group consisting of sulfuric acid Iron, gasified iron or a mixture thereof; a co-dispersant' selected from the group consisting of a mystery, an alcohol, an alcohol ether, a cyclic acid, a ketone, a nitrile, a sub-minus, and combinations thereof; and further comprising contacting the dispersion with an ion exchange resin Wherein the ion exchange resin is selected from the group consisting of sulfonated styrene-divinylbenzene copolymers, carboxylic acid, sulfonated crosslinked stupid ethylene polymers, stupid-furfural sulfonic acid, carboxylic acid, acrylic acid, phosphoric acid, tertiary amine A quaternary amine anion exchange resin and mixtures thereof.零88435-990l27.doc drawer: an organic electronic device comprising at least one organic layer, and the organic: cerium is composed of a combination of a polyoxygen phenanthrene and at least one colloidal polyacid. The composition is prepared wherein the colloid forms a fluorinated acid A-containing perfluoroethylene sulfide, and the polydioxime is poly(3,4-ethylenedioxy-4). • The device according to claim 8 of the patent application, wherein the device is a photo sensor, a photoelectric switch, a photoresistor, a photoelectric crystal, a photocell, a claw detector, a photovoltaic cell, a solar cell, a light emitting diode, a living being Sensor, LED display or diode laser. 88435-990127.doc
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US8409476B2 (en) 2005-06-28 2013-04-02 E I Du Pont De Nemours And Company High work function transparent conductors
US8491819B2 (en) 2006-12-29 2013-07-23 E I Du Pont De Nemours And Company High work-function and high conductivity compositions of electrically conducting polymers
US8585931B2 (en) 2002-09-24 2013-11-19 E I Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
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US8585931B2 (en) 2002-09-24 2013-11-19 E I Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
US8784692B2 (en) 2002-09-24 2014-07-22 E I Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
US8641926B2 (en) 2003-04-22 2014-02-04 E I Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
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