JP3619773B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3619773B2
JP3619773B2 JP2000387825A JP2000387825A JP3619773B2 JP 3619773 B2 JP3619773 B2 JP 3619773B2 JP 2000387825 A JP2000387825 A JP 2000387825A JP 2000387825 A JP2000387825 A JP 2000387825A JP 3619773 B2 JP3619773 B2 JP 3619773B2
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JP
Japan
Prior art keywords
substrate
semiconductor device
mold
manufacturing
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000387825A
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English (en)
Japanese (ja)
Other versions
JP2002190488A5 (enExample
JP2002190488A (ja
Inventor
典之 高橋
雅之 鈴木
孝司 土屋
隆男 松浦
孝則 橋爪
昌弘 一谷
一成 鈴木
隆文 西田
健一 井村
孝志 三輪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Hitachi Solutions Technology Ltd
Original Assignee
Renesas Technology Corp
Hitachi ULSI Systems Co Ltd
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Publication date
Application filed by Renesas Technology Corp, Hitachi ULSI Systems Co Ltd filed Critical Renesas Technology Corp
Priority to JP2000387825A priority Critical patent/JP3619773B2/ja
Priority to SG200107100A priority patent/SG92821A1/en
Priority to US09/987,532 priority patent/US6596561B2/en
Priority to TW090128724A priority patent/TW526598B/zh
Priority to KR1020010081051A priority patent/KR100551641B1/ko
Priority to CNB011338032A priority patent/CN1230882C/zh
Publication of JP2002190488A publication Critical patent/JP2002190488A/ja
Priority to US10/453,606 priority patent/US6723583B2/en
Priority to US10/784,276 priority patent/US6872597B2/en
Priority to US11/047,660 priority patent/US7015069B2/en
Application granted granted Critical
Publication of JP3619773B2 publication Critical patent/JP3619773B2/ja
Publication of JP2002190488A5 publication Critical patent/JP2002190488A5/ja
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Expired - Lifetime legal-status Critical Current

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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
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    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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SG200107100A SG92821A1 (en) 2000-12-20 2001-11-13 A method of manufacturing a semiconductor device and a semiconductor device
US09/987,532 US6596561B2 (en) 2000-12-20 2001-11-15 Method of manufacturing a semiconductor device using reinforcing patterns for ensuring mechanical strength during manufacture
TW090128724A TW526598B (en) 2000-12-20 2001-11-20 Manufacturing method of semiconductor device and semiconductor device
KR1020010081051A KR100551641B1 (ko) 2000-12-20 2001-12-19 반도체 장치의 제조 방법 및 반도체 장치
CNB011338032A CN1230882C (zh) 2000-12-20 2001-12-20 一种半导体器件的制造方法和一种半导体器件
US10/453,606 US6723583B2 (en) 2000-12-20 2003-06-04 Method of manufacturing a semiconductor device using a mold
US10/784,276 US6872597B2 (en) 2000-12-20 2004-02-24 Method of manufacturing a semiconductor device and a semiconductor device
US11/047,660 US7015069B2 (en) 2000-12-20 2005-02-02 Method of manufacturing a semiconductor device and a semiconductor device

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CN1230882C (zh) 2005-12-07
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US6872597B2 (en) 2005-03-29
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