JP2006073586A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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Abstract
【解決手段】 トランスファモールドを行うときに、前記プリント配線板と前記プリント配線板を吸着させる下型の吸着面のうち、キャビティのモールド樹脂を流し込むゲートと反対側の端部の近傍から前記下型の外部空間に通じる貫通穴を可能な限り多数個存在させる。
【選択図】 図9
Description
なお、実施例を説明するための全図において、同一機能を有するものは、同一符号を付け、その繰り返しの説明は省略する。
図1乃至図3において、1はプリント配線板、101は絶縁基板、102は導体パターン、103は保護絶縁膜、2は半導体チップ、201は半導体チップの電極、3ははんだボール、4は接着剤、5はボンディングワイヤ、6はモールド樹脂である。
図4乃至図8において、PAは半導体装置として切り出す領域(製品領域)、CAはチップ搭載領域、7はローラー、8は上型、801はキャビティ、802はゲート、801aはキャビティの下流側端部、9は下型、901は排気穴である。
図9において、801aはキャビティの下流側端部、901は下型の排気穴である。
101…絶縁基板
102…導体パターン
103…保護絶縁膜
104…溝
2…半導体チップ
201…半導体チップの電極
3…はんだボール
4…接着剤
5…ボンディングワイヤ
6…モールド樹脂
7…ローラー
8…上型
801…キャビティ
801a…キャビティの下流側端部
802…ゲート
9…下型
901…排気穴
10…空気(気泡)
PA…半導体装置として切り出す領域(製品領域)
Claims (12)
- 絶縁基板上に導体パターンおよび保護絶縁膜が形成されたプリント配線板上に複数の半導体チップを搭載し、前記複数の半導体チップの外部電極と前記プリント配線板の導体パターンをボンディングワイヤで電気的に接続するチップ実装工程と、モールド金型を用いたトランスファモールドで前記プリント配線板上の複数の半導体チップおよびボンディングワイヤを封止する封止工程と、前記プリント配線板を切断して前記複数の半導体チップが搭載された領域を、それぞれの半導体チップが搭載された領域ごとに切り出す個片化工程とを有し、前記プリント配線板は、前記複数の半導体チップを搭載する面およびその裏面に導体パターンが形成され、前記プリント配線板の裏面側に保護絶縁膜が形成されている配線板を用いる複数の半導体装置の製造方法であって、
前記封止工程は、前記プリント配線板の前記複数の半導体チップが搭載された面側に配置されたキャビティを備える上型と、前記プリント配線板の前記複数の半導体チップが搭載された面の裏面を吸着させる下型からなる前記モールド金型で前記プリント配線板を型締めしたときに、前記プリント配線板の前記裏面と前記下型の吸着領域のうち、前記吸着領域内であり、かつ、前記キャビティにモールド樹脂を流し込むゲート側の端部と反対側の端部の近傍に、前記プリント配線板の前記裏面と前記下型の吸着面から前記下型の外部空間に通じる排気穴が、前記複数の半導体チップが配列されるピッチよりも小さなピッチで配列されていることを特徴とする半導体装置の製造方法。 - 前記プリント配線板の保護絶縁膜は、その表面の凹凸が、前記プリント配線板の導体パターンの膜厚の10分の1以下になっていることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記封止工程は、前記下型に、前記プリント配線板の前記裏面と前記下型の吸着領域のうち、前記吸着領域内であり、かつ、前記キャビティにモールド樹脂を流し込むゲート側の端部と反対側の端部の近傍に、前記プリント配線板の前記裏面と前記下型を吸着させる排気穴が、前記複数の半導体チップが配列されるピッチよりも小さなピッチで配列されて設けられているモールド金型を用いることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記下型は、キャビティにモールド樹脂を流し込むゲート側の端部と反対側の端部(以下、下流側端部という)の近傍に設けられた排気穴が、前記キャビティの下流側端部と、前記個辺化工程で切り出す領域のうち前記下流側端部から最も近い端部との間に設けられていることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記下型は、前記キャビティにモールド樹脂を流し込むゲート側の端部と反対側の端部(以下、下流側端部という)の近傍に設けられた排気穴が、前記封止工程で切り出す領域の幅のうち、前記下流側端部に沿った方向の幅よりも狭い間隔で設けられていることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記プリント配線板の保護絶縁膜は、ドライフィルムレジストを用いて形成された絶縁膜であることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記プリント配線板の保護絶縁膜は、製造過程でその表面を圧着されて形成された絶縁膜であることを特徴とする請求項2に記載の半導体装置の製造方法。
- 絶縁基板上に導体パターンおよび保護絶縁膜が形成されたプリント配線板上に複数の半導体チップを搭載し、前記複数の半導体チップの外部電極と前記プリント配線板の導体パターンをボンディングワイヤで電気的に接続するチップ実装工程と、モールド金型を用いたトランスファモールドで前記プリント配線板上の複数の半導体チップおよびボンディングワイヤを封止する封止工程と、前記プリント配線板を切断して前記複数の半導体チップが搭載された領域を、それぞれの半導体チップが搭載された領域ごとに切り出す個片化工程とを有し、前記プリント配線板は、前記複数の半導体チップを搭載する面およびその裏面に導体パターンが形成され、前記プリント配線板の裏面側に保護絶縁膜が、形成されている配線板を用いる複数の半導体装置の製造方法であって、
前記封止工程は、前記プリント配線板の前記複数の半導体チップが搭載された面側に配置されたキャビティを備える上型と、前記プリント配線板の前記複数の半導体チップが搭載された面の裏面を吸着させる下型からなる前記モールド金型で前記プリント配線板を型締めしたときに、前記プリント配線板の前記裏面と前記下型の吸着領域のうち、前記吸着領域内であり、かつ、前記キャビティにモールド樹脂を流し込むゲート側の端部と反対側の端部の近傍に、前記プリント配線板の前記裏面と前記下型の吸着面から前記下型の外部空間に通じる排気穴が設けられており、
前記封止工程を行う前に、前記プリント配線板の前記半導体チップを搭載した面の裏面の、前記個辺化工程で切り出す領域の外側に、前記プリント配線板の辺のうち、少なくとも1つの辺に達する溝を形成しておき、
前記封止工程は、前記プリント配線板の裏面に設けた溝が到達している辺の1つが、前記キャビティにモールド樹脂を流し込むゲート側の端部と反対側の端部に位置するように前記モールド金型で型締めすることを特徴とする半導体装置の製造方法。 - 前記プリント配線板の保護絶縁膜は、その表面の凹凸が、前記プリント配線板の導体パターンの膜厚の10分の1以下になっていることを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記プリント配線板の溝は、前記チップ実装工程の前に形成しておくことを特徴とする請求項9に記載の半導体装置の製造方法。
- 前記プリント配線板の保護絶縁膜は、ドライフィルムレジストを用いて形成された絶縁膜であることを特徴とする請求項9に記載の半導体装置の製造方法。
- 前記プリント配線板の保護絶縁膜は、製造過程でその表面を圧着されて形成された絶縁膜であることを特徴とする請求項9に記載の半導体装置の製造方法。
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