JP2020502811A5 - - Google Patents

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JP2020502811A5
JP2020502811A5 JP2019533041A JP2019533041A JP2020502811A5 JP 2020502811 A5 JP2020502811 A5 JP 2020502811A5 JP 2019533041 A JP2019533041 A JP 2019533041A JP 2019533041 A JP2019533041 A JP 2019533041A JP 2020502811 A5 JP2020502811 A5 JP 2020502811A5
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substrate
gas
reforming
energy
temperature
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JP2020502811A (ja
JP7209155B2 (ja
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JP2019533041A 2016-12-19 2017-12-14 デザイナー原子層エッチング Active JP7209155B2 (ja)

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JP2022155681A JP7320168B2 (ja) 2016-12-19 2022-09-29 デザイナー原子層エッチング

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US201662436286P 2016-12-19 2016-12-19
US62/436,286 2016-12-19
US201762532916P 2017-07-14 2017-07-14
US62/532,916 2017-07-14
US15/841,205 2017-12-13
US15/841,205 US10566212B2 (en) 2016-12-19 2017-12-13 Designer atomic layer etching
PCT/US2017/066470 WO2018118655A1 (en) 2016-12-19 2017-12-14 Designer atomic layer etching

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JP2020502811A JP2020502811A (ja) 2020-01-23
JP2020502811A5 true JP2020502811A5 (enExample) 2021-01-28
JP7209155B2 JP7209155B2 (ja) 2023-01-20

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JP (2) JP7209155B2 (enExample)
KR (4) KR20250005482A (enExample)
CN (2) CN110741462B (enExample)
TW (2) TWI832325B (enExample)
WO (1) WO2018118655A1 (enExample)

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