TW200428532A - Method of modifying conductive wiring - Google Patents
Method of modifying conductive wiring Download PDFInfo
- Publication number
- TW200428532A TW200428532A TW92115012A TW92115012A TW200428532A TW 200428532 A TW200428532 A TW 200428532A TW 92115012 A TW92115012 A TW 92115012A TW 92115012 A TW92115012 A TW 92115012A TW 200428532 A TW200428532 A TW 200428532A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal layer
- metal
- scope
- item
- modifying
- Prior art date
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
200428532 五、發明說明（1) 【發明所屬之技術領域】 本發明係有關於一種半導體製程的方法，且特別是有 關於一種金屬層之改質方法。 【先前技術】 金屬導線層在半導體技術中扮演極重要的角色，而精 確無誤地將各層金屬導線層整合於一晶片中也是一項極為 重要的技術。目前金屬導線層的發展需要盡可能提高其可 靠度、縮小其尺寸大小並且增加其製程容許度。 然而，金屬導線層之製作技術中有幾項困難點，必須 加以改善。由於金屬導線層的反射率相當高，在後續微影 (photol i thography)製程中高強度的反射率會導致曝光對 準發生困難。因此，金屬導線層的表面通常會形成一抗反 射層（anti-reflective coating)，例如氮化鈦，以降低 微影曝光時的反射光強度，可提高微影製程容許度。 另外’目前常使用的金屬導線材質多為銅鋁合金（Cu/ A1 alloy)或銅紹石夕合金（Cu/Al/Si alloy)，卻往往容易 在製程中务生銅紹（CuA12)析出（precipitate)的問題。銅 紹的析出會在後續姓刻金屬導電層時導致有毒殘留物的產 生’殘留物會導致位於金屬層下方的阻障層發生斷線，而 形成短路。 並且’金屬導線層沉積過程中所殘留的應力（s ^ r e s s) 以及表面不平整而易造成光阻崩塌的問題，皆是目前急需 改善的方向。200428532 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a semiconductor, and more particularly to a method for modifying a metal layer. [Previous technology] The metal wire layer plays a very important role in semiconductor technology, and it is also an extremely important technology to accurately integrate the metal wire layers in a wafer. The current development of the metal wire layer needs to improve its reliability as much as possible, reduce its size and increase its process tolerance. However, there are several difficulties in the fabrication of metal wire layers that must be improved. Since the reflectivity of the metal wire layer is quite high, high-intensity reflectivity in subsequent photolithography processes may cause difficulty in exposure alignment. Therefore, an anti-reflective coating, such as titanium nitride, is usually formed on the surface of the metal wire layer to reduce the intensity of the reflected light during lithographic exposure and improve the lithographic process tolerance. In addition, most of the currently used metal wire materials are copper aluminum alloy (Cu / A1 alloy) or copper / Al / Si alloy, but it is often easy to precipitate copper (CuA12) in the process ( precipitate). The precipitation of copper will lead to the generation of toxic residue when the metal conductive layer is engraved later. The residue will cause the barrier layer below the metal layer to be disconnected and short-circuited. In addition, the residual stress (s ^ r e s s) during the deposition of the metal wire layer and the problem that the photoresistance collapse caused by the uneven surface are all directions that need to be improved.
0702-9528TW:f(Nl) ； 91P74 ； Felicia.ptd 第5頁 200428532 五、發明說明（2) 有鑑於此 提供一種金屬 (conductive \ 【發明内容】 本發明之 以避免金屬層 (precipitate: 本發明之 以降低金屬層 的施行。 本發明之 快速冷卻，改 層。另外，這 形成金屬層之 成第二金屬阻 為獲致上 法，此方法的 首先’提 障層於上述基 屬阻障層表面 層表面。最後0702-9528TW: f (Nl); 91P74; Felicia.ptd Page 5 200428532 V. Description of the invention (2) In view of this, a metal is provided (conductive \ [Summary of the Invention] The invention avoids the metal layer (precipitate: the invention The purpose is to reduce the implementation of the metal layer. The rapid cooling of the present invention changes the layer. In addition, the formation of the second metal barrier by the formation of the metal layer is to obtain the above method, and the method first 'lifts the barrier layer on the surface of the base barrier layer described above. Layer surface.finally
的改質方 出 短路的問 法 ， ’為了解決上述問題，本發明主 層的改質方法，可適用於半導 要目的在於 Π r i n g)的製造。 、金屬導線 目的之一在於提供一種金屬層 不均勻，以避免銅鋁（CuA12)杆 〉的問題發生，發生金屬導電層 目的之二在於提供一種金屬層的改質方法， 反射率及反射率之差異，有利後續微影製成 主要特徵在於1 ·以熱處理方式，包括烘烤= 質金屬層。2.以含氮氣體處理方式改免金 些改質方式可施行於1·形成金屬層之A ’ 2·; 後，3 ·形成第二金屬阻障層之欽之後 4 · 障層之氮化鈦之後。 述之目的，本發明提出一種金屬層的改貝方 步驟主要係包括： 供一半導體基底。接著，形成_第一金屬阻 底表面。接著，形成一金屬層於上述第〆^ 。然後，形成一第二金屬阻障層於上述金屬 ，貫施一熱處理程序。 200428532 五、發明說明（3) 如前所述，上述第一金屬阻障層與上述第二金屬阻障 層分別係由堆疊之欽（T丨）/氮化鈦（T i N)所構成，而上述金 屬層係銅鋁合金（Cu/Al al l〇y)或鋼鋁矽合金（Cu/Al/Si alloy) 0 根據本發明’上述熱處理程序可以急速冷卻方式進行 或以烘烤方式進行。 根據本發明’上述熱處理程序可施行於形成上述金屬 層之後或施行於形成上述第二金屬阻障層之氮化鈦（T i N) 之後。 根據本發明’上述熱處理程序之溫度約為2 0 0〜4 0 0 °C。 根據本發明，上述急速冷卻的溫度變化係由室溫約2 3 。(：，於約5〜1 〇秒内，將溫度上升至約3 5 0 °C，接著，保持 約5 0〜7 0秒，最後在約3 0〜1 〇 〇秒内將溫度降至室溫約2 3 〇C。 又，為獲上述目的，本發明又提出一種金屬層的改質 方法，此方法的步驟主要係包括： 首先’知1七、半^"體基底。接著，形成一第一金屬阻 障層於上述基底表面。然後，形成一金屬層於上述第一金 屬阻障層表面。接著，形成一第二金屬阻障層於上述金屬 層表面。最後，實施一含氮氣體處理程序。 根據本發明，上述含氮氣體處理程序可施行於形成上 述金屬層之後’或是施行於形成上述第二金屬阻障層之氮In order to solve the above-mentioned problem, the modification method of the short circuit method is used, ’In order to solve the above-mentioned problem, the modification method of the main layer of the present invention can be applied to the manufacture of semiconductors whose main purpose is Π r i n g). One of the purposes of metal wires is to provide a non-uniform metal layer to avoid the problems of copper-aluminum (CuA12) rods. The second purpose of metal conductive layers is to provide a method for modifying the metal layer. The difference is beneficial to the subsequent lithography. The main features are: 1) By heat treatment, including baking = quality metal layer. 2. The nitrogen-containing gas treatment method can be used to avoid the need for gold. Some modification methods can be applied to 1. A '2 · forming a metal layer; 3, 3 · forming a second metal barrier layer 4 · nitriding the barrier layer After titanium. For the purposes described, the present invention provides a step of modifying the metal layer, which mainly includes: providing a semiconductor substrate. Next, a first metal bottom surface is formed. Then, a metal layer is formed on the first ^^. Then, a second metal barrier layer is formed on the metal, and a heat treatment process is performed. 200428532 V. Description of the invention (3) As mentioned above, the first metal barrier layer and the second metal barrier layer are respectively composed of stacked Ti (Ti) / titanium nitride (T i N). Whereas, the above metal layer system is copper / aluminum alloy (Cu / Al aloy) or steel / aluminum silicon alloy (Cu / Al / Si alloy). According to the present invention, the above-mentioned heat treatment process may be performed in a rapid cooling manner or in a baking manner. According to the present invention ', the above-mentioned heat treatment process may be performed after the above-mentioned metal layer is formed or after the above-mentioned second metal barrier layer is formed of titanium nitride (T i N). According to the present invention ', the temperature of the above-mentioned heat treatment process is about 2000 to 400 ° C. According to the present invention, the temperature change of the rapid cooling is about 2 3 from room temperature. (: Raise the temperature to approximately 350 ° C in approximately 5 to 10 seconds, then maintain it for approximately 50 to 70 seconds, and finally reduce the temperature to approximately 30 to 100 seconds The temperature is about 2 3 ° C. In order to achieve the above-mentioned object, the present invention further proposes a method for modifying a metal layer. The steps of this method mainly include: First, the substrate is known. Then, forming A first metal barrier layer is formed on the surface of the substrate. Then, a metal layer is formed on the surface of the first metal barrier layer. Next, a second metal barrier layer is formed on the surface of the metal layer. Finally, a nitrogen-containing layer is implemented. Gas treatment procedure. According to the present invention, the nitrogen-containing gas treatment procedure may be performed after the formation of the metal layer, or may be performed after the formation of the second metal barrier layer.
0702-9528TWf(Nl) ； 91P74 ； Felicia.ptd 200428532 五、發明說明（4) 化鈦（T i N )之後。 根據本發明 氣（N2)。0702-9528TWf (Nl); 91P74; Felicia.ptd 200428532 V. Description of the invention (4) After titanium oxide (T i N). Gas (N2) according to the present invention.
上述含氮氣體包括_ 氧化二氮（N2〇)或氡 為使本發明之上述目的、特徵和_ 下文特舉較佳實施例’並配合所附圖式 下： x 點能更明顯易懂 ，作詳細說明如 【實施方式】 實施例1 以下請配合參考第1圖至第4圖之制立 據本發明之一較佳實施例。 之-程剖面圖，說明根 …Ϊ先請參照第1圖’提供—半導體基底100，其材質 例如為矽（Si)，其上方可以形成任何所 貝 例如M0S電晶豸、電阻、邏輯元件等，不過此處為"了簡化 圖式，僅以平整的基板100表示 <。在本發明的敘述中，” 基底”一詞係包括半導體晶圓上已形成的元件與覆蓋在晶 圓上的各種塗層，’’基底表面"一詞係包括半導體晶圓的所 露出的最上層’例如矽晶圓表面、絕緣層、金屬導線等。 接著，請芩照第2圖，形成一第一金屬阻障層丨〇 4於基 底100表面。第一金屬阻障層104可由堆疊之鈦（Ti) /氮化 鈦（T i N )所構成’利用物理氣相沉積法（p乜y s i c a 1 v a ρ 〇 r deposition; PVD)或化學氣相沉積法（chemicai vap〇r deposi tion ; CVD)，而形成。製程溫度約90〜;i 10 〇c，先以The above-mentioned nitrogen-containing gas includes _ dinitrogen oxide (N2O) or yttrium. In order to achieve the above-mentioned objects, features, and _ of the present invention, preferred embodiments are given below, and in conjunction with the accompanying drawings, the point x can be more clearly understood. For detailed description, such as [Embodiment] Embodiment 1 Please refer to FIG. 1 to FIG. 4 to make a preferred embodiment according to the present invention. A cross-sectional view of the process, to explain the roots ... Please refer to Figure 1 'Provided—Semiconductor substrate 100, whose material is, for example, silicon (Si), can be formed on top of any substrate such as M0S transistors, resistors, logic elements, etc , But here is a " simplified diagram, which is represented only by a flat substrate 100 <. In the description of the present invention, the term "substrate" includes components formed on a semiconductor wafer and various coatings covering the wafer, and the term "substrate surface" includes exposed semiconductor wafers. The top layer 'is, for example, the surface of a silicon wafer, an insulating layer, a metal wire, and the like. Then, according to FIG. 2, a first metal barrier layer is formed on the surface of the substrate 100. The first metal barrier layer 104 may be composed of stacked titanium (Ti) / titanium nitride (TiN) using a physical vapor deposition method (p 乜 ysica 1 va ρ 〇r deposition; PVD) or chemical vapor deposition. (Chemicai vapor deposi tion; CVD). Process temperature is about 90 ~; i 10 〇c, first with
0702-9528TWf(Nl) ； 91P74 ； Felicia.ptd 第8頁 200428532 五、發明說明（5) -—- 金屬鈦為靶材，形成鈦1041之厚度約13〇〜17〇 A，然後再 於金屬鈦靶材之下通入氮氣而形成氮化鈦1〇42 180〜220 A 。 接著，請參照第3圖，形成一金屬層1〇6於第一全屬阻 障層1〇4表面。金屬層106可包括銅鋁合金（Cu/ai aii〇y) 或銅銘矽合金（Cu/A1/Sl aU〇y)，其成份例如為原子百分 比A199. 5%、CuO. 5%，原子百分比A198· 5%、Cu〇. 5% 與^1% ，可利用物理氣相沉積（PVD)或化學氣相沉積法（CVD)形 成。製程溫度約2 70〜3 3 0。(：，金屬層1〇6之厚度約 2500〜4000 A 。 此日守，於形成金屬層1 Q 6之後，可施行本發明之主要 改質步驟，實施一熱處理程序S1〇〇。熱處理程序si〇〇可以 烘烤方式進行或以急速冷卻方式進行，溫度約為2〇〇〜4〇〇 °C。並且，該熱處理程序31⑽可於含氮氣氛環境下施行， 例如氧化一氮（h 0 )或氮氣（)。該熱處理程序g 1 Q Q可以 =止銅鋁（CuAl2)析出（precipi tate)。銅鋁的析出會在後 續餘刻金屬導電層時導致有毒殘留物的產生，殘留物會導 致位於金屬層下方的阻障層發生斷線，而形成短路。二熱 處理程序S1 00，亦可以改善金屬層均勻度，避免發生金屬 導電層短路的問題，又可以有效控制金屬層反射率的均勻 度，有利後續微影製成的施行。 隶後，明參R?、第4圖，形成一第二金屬阻障層1 q 8於金 屬層106表面。第二金屬阻障層ι〇8可由堆疊之鈦（Ti) /氮 化鈦（TiN)所構成，利用物理氣相沉積（PVD)或化學氣相沉0702-9528TWf (Nl); 91P74; Felicia.ptd Page 8 200428532 V. Description of the invention (5) ----- Titanium metal is used as the target to form titanium 1041 with a thickness of about 13 ～ 17〇A, and then on the metal titanium Nitrogen gas was passed under the target to form titanium nitride 1042 180 ~ 220 A. Next, referring to FIG. 3, a metal layer 106 is formed on the surface of the first all-type barrier layer 104. The metal layer 106 may include a copper aluminum alloy (Cu / ai aii〇y) or a copper silicon alloy (Cu / A1 / Sl aU〇y), the composition of which is, for example, A199.5%, CuO. 5%, atomic percentage A198 · 5%, Cu0.5% and ^ 1% can be formed by physical vapor deposition (PVD) or chemical vapor deposition (CVD). The process temperature is about 2 70 ~ 3 3 0. (: The thickness of the metal layer 10 is about 2500 ~ 4000 A. This date, after the metal layer 1 Q 6 is formed, the main modification step of the present invention can be performed, and a heat treatment procedure S100 is implemented. The heat treatment procedure si 〇〇 can be carried out in baking or rapid cooling, the temperature is about 2000 ~ 400 ° C. And, the heat treatment process 31 ° can be performed in a nitrogen-containing atmosphere environment, such as nitric oxide (h 0) Or nitrogen (). The heat treatment procedure g 1 QQ can = prevent the precipitation of copper and aluminum (CuAl2). Precipitation of copper and aluminum will lead to the generation of toxic residues in the subsequent conductive metal layer. The residues will cause the The barrier layer below the metal layer is disconnected and a short circuit is formed. The second heat treatment procedure S100 can also improve the uniformity of the metal layer, avoid the problem of short circuit of the conductive metal layer, and effectively control the uniformity of the reflectivity of the metal layer. Facilitate the implementation of subsequent photolithography. Subsequent, R ?, Figure 4, a second metal barrier layer 1 q 8 is formed on the surface of the metal layer 106. The second metal barrier layer ι〇8 can be stacked. Titanium (Ti) / nitriding (TiN) formed by physical vapor deposition (PVD) or chemical vapor
ΜΜ
Η 0702-9528TWf(Nl) ； 91P74 ； Felicia.ptd 第9頁 200428532 五、發明說明（6) 積法（CVD)形成。製程溫度約90〜110 °C，先以金屬鈦為靶 材，形成鈦1081之厚度約90〜110 A，然後可以同時進行一 電衆處理與一氣體處理（例如含氮氣體），以使鈦1 〇 8 1氮 化。然後，再於金屬鈦靶材之下通入氮氣而形成氮化鈦 1082之厚度約650〜750A。並且，氮化鈦1〇82可同時作為 抗反射層（anti-reflection coating)。 根據本發明，本實施例之改質方法係步驟31〇〇之熱處 理紅序，而熱處理程序S 1 〇 〇可施行於形成金屬層1 〇 β之後 ，抑或是施行於形成第二金屬阻障層之氮化鈦1〇82之後。 並且，根據本發明，本實施例之改質方法係步驟81⑽ 之熱處理程序，還可以配合一電漿處理或一氣體處理（例 如含氮氣體）同時進行，且施行順序係在形成第二金屬阻 障層之氮化鈦1 0 8 2之後。 根據本奄明之急速冷卻的溫度變化係由室溫約U ，於約5]◦秒内，將溫度上升至約35〇t，接著，保持約 50〜70秒，最後在約30 4 00秒内將溫度降至室溫約。 實施例2 同樣地，卩下請配合參考第1圖至第4圖之製程剖面 圖’說明根據本發明之一較佳實施例。 表枉d面 首先，請參照第1圖，提供一半I ,T f / 卞等體基底100，其材晳 例如為矽（s i)，其上方可以形成任 才貝 , unQ ^ n ^ 取任何所需的半導體元件， 例如Μ 0 S笔晶體、電阻、邏輯元件望 < 在本發明的敘述中，” 回斗、^ 件專’不過此處為了簡化 圖式，僅以平整的基板100表示之。Η 0702-9528TWf (Nl); 91P74; Felicia.ptd Page 9 200428532 V. Description of the invention (6) Formation by CVD. The process temperature is about 90 ~ 110 ° C. Using titanium metal as the target, the thickness of titanium 1081 is about 90 ~ 110 A, and then an electric mass treatment and a gas treatment (such as a nitrogen-containing gas) can be performed simultaneously to make titanium 1 〇 8 1 nitride. Then, nitrogen is passed under the metal titanium target to form titanium nitride 1082 with a thickness of about 650 ~ 750A. In addition, titanium nitride 1082 can serve as an anti-reflection coating at the same time. According to the present invention, the modification method of this embodiment is a heat treatment red sequence of step 31000, and the heat treatment procedure S 100 may be performed after the metal layer 100 β is formed, or it may be performed to form a second metal barrier layer After titanium nitride 1082. In addition, according to the present invention, the modification method of this embodiment is a heat treatment procedure of step 81. It can also be performed simultaneously with a plasma treatment or a gas treatment (such as a nitrogen-containing gas), and the execution sequence is to form a second metal resistance. After the barrier layer of titanium nitride 10 8 2. According to the rapid cooling temperature change of the present invention, the temperature is increased from room temperature to about U within 5 seconds, and the temperature is increased to about 35 ° t, then maintained for about 50 to 70 seconds, and finally within about 30 4 00 seconds. Reduce the temperature to about room temperature. Embodiment 2 Similarly, Your Majesty, please refer to the cross-sectional views of the process of Figs. 1 to 4 to illustrate a preferred embodiment of the present invention. Table 枉 d surface First, please refer to Figure 1 to provide a half of I, T f / 卞 and other body substrates 100. The material is, for example, silicon (si), and can be formed on top of it. UnQ ^ n ^ Required semiconductor components, such as M 0 S pen crystals, resistors, logic elements, etc. < In the description of the present invention, "return, special parts", but to simplify the diagram here, only the flat substrate 100 is used .
200428532 五、發明說明（7) 基底π —詞係包括半導體晶圓上已形成的元件與覆蓋在晶 圓上的各種塗層；”基底表面π —詞係包括半導體晶圓的所 露出的最上層，例如石夕晶圓表面、絕緣層、金屬導線等。 接著，請參照第2圖，形成一第一金屬阻障層1 〇 4於基 底100表面。第一金屬阻障層104可由堆疊之鈦（Ti) /氮化 鈦（TiN)所構成，利用物理氣相沉積（PVD)或化學氣相沉積 法（CVD)而形成。製程溫度約90〜11 0 °C，先以金屬鈦為革巴 材，形成鈦1 041之厚度約130〜170 A，然後再於金屬鈦革巴 材之下通入氮氣而形成氮化鈦1042之厚度約180〜220A。 接著，請參照第3圖，形成一金屬層1 〇 6於第一金屬阻 障層104表面。金屬層106可包括銅鋁合金（Cu/Al alloy) 或銅鋁矽合金（Cu/Al/Si alloy)，其成份例如為原子百分 比八199.5%、（：11〇.5%，原子百分比八198_5%、（：11〇.5%與8110/〇 ，可利用物理氣相沉積（PVD)或化學氣相沉積法（CVD)而形 成。製程溫度約200〜400 °C，金屬層106之厚度約 2500〜4000 A ° 最後’請參照第4圖，形成一第二金屬阻障層1 〇 8於金 屬層106表面。苐一金屬阻障層可由堆疊之鈦（Ti) /氮 化数（TiN)所構成，利用物理氣相沉積（pVD)或化學氣相沉 積法（CVD)而形成，製程溫度約9〇〜U(rc，先以金屬鈦為 革巴材’形成鈦1081之厚度約9〇〜丨1〇 a，然後再於金屬鈦靶 材之下通入氮氣而形成氮化鈦1〇82之厚度約65〇〜75〇A。 亚且’ II化欽1 0 82可同時作為抗反射層（anti_reflecti〇n coating) 〇200428532 V. Description of the invention (7) Substrate π — The word system includes components that have been formed on the semiconductor wafer and various coatings covering the wafer; “Substrate surface π — The word system includes the exposed uppermost layer of the semiconductor wafer For example, the surface of Shi Xi wafer, insulation layer, metal wires, etc. Then, referring to FIG. 2, a first metal barrier layer 104 is formed on the surface of the substrate 100. The first metal barrier layer 104 may be made of stacked titanium. (Ti) / titanium nitride (TiN), formed by physical vapor deposition (PVD) or chemical vapor deposition (CVD). The process temperature is about 90 ~ 110 ° C, and metal titanium is used as the leather. The thickness of titanium 1 041 is about 130 ~ 170 A, and then nitrogen is passed under the metal titanium leather material to form the thickness of titanium nitride 1042 is about 180 ~ 220A. Next, please refer to Figure 3 to form a The metal layer 106 is on the surface of the first metal barrier layer 104. The metal layer 106 may include a copper / aluminum alloy (Cu / Al alloy) or a copper / aluminum-silicon alloy (Cu / Al / Si alloy). 199.5%, (: 110.5%, atomic percentage eight 198_5%, (: 110.5% and 8110 / It can be formed by physical vapor deposition (PVD) or chemical vapor deposition (CVD). The process temperature is about 200 ~ 400 ° C, and the thickness of the metal layer 106 is about 2500 ~ 4000 A ° Finally, please refer to FIG. 4, A second metal barrier layer 108 is formed on the surface of the metal layer 106. The first metal barrier layer may be composed of stacked titanium (Ti) / nitride number (TiN), using physical vapor deposition (pVD) or chemical It is formed by vapor deposition (CVD), and the process temperature is about 90 ~ U (rc, using titanium metal as the leather material to form titanium 1081 with a thickness of about 90 ~ 10a, and then on the metal titanium target. Nitrogen gas is passed below to form titanium nitride 1082 with a thickness of about 65〇 ~ 75〇A. In addition, 'II-H2O1 0 82 can be used as an anti-reflection coating at the same time.
第11頁 ’然各種改質可單獨 200428532 五、發明說明（8) 根據本發明，本實施例之改質方法係步驟S丨〇 2之 氣體處理程序’而含氮氣體處理程序S 1 Q 2可施行於形 屬層106之前，或是形成金屬層1〇6之後，或是施行於 第一金屬阻障層之鈦1 0 8 1之後，抑或是施行於形成第 屬阻障層之氮化鈦1 0 8 2之後。 根據本發明，本實施例之改質方法係步驟3丨〇 2之 氣體處理程序，而含氮氣體處理程序81〇2可以配合一 理程序同時進行，可施行於形成金屬層1〇6之前（形成 金屬阻障層之氣化欽1042之後），或是形成金屬層1〇6 ，或是施行於形成第二金屬阻障層之鈦丨〇 8丨之後，抑 施行於形成第二金屬阻障層之氮化鈦1〇82之後。 根據本發明，本實施例之改質方法係步驟31〇2之 氣體處理程序’而含氮氣體處理程序川2可以配合— 理程序同時進行，可施行於形成金屬層⑽之前（ 金屬阻障層之氮化鈦1042之後），或是施行於形成第 屬阻障層之鈦1 0 8 1之後，抑式θ A > 丨或疋施行於形成第二金Μ 層之氮化鈦1 0 82之後。 珩至^ 本發明之改質程序包括1 # 士 •以熱處理方式，句括 急速冷卻，改質金屬層。2 ·以人^ # 匕括Μ — $氮氣體處理方式改w 層。其貫施例以分別說明於文前 貝 實施，亦可以合併使用實施。 本發明雖以較佳實施例揭露如上 本發明的範圍’任何熟習此項技蓺者 含氮 成金 形成 二金 含氡 熱處 第— 之後 或是 含氮 電槳 第〜 二金 F且障 烤或 金屬 使用 然其並非用以限定 在不脫離本發明之Page 11 'However, various modifications can be made separately 200428532 V. Description of the invention (8) According to the present invention, the modification method of this embodiment is the gas treatment procedure of step S 丨 〇2' and the nitrogen-containing gas treatment procedure S 1 Q 2 It can be applied before the metallization layer 106, after the metal layer 106 has been formed, after the titanium metal barrier layer 1 0 8 1 has been formed, or after the nitride formation of the first metal barrier layer. After titanium 1 0 8 2. According to the present invention, the modification method of this embodiment is the gas treatment procedure of step 3 and 02, and the nitrogen-containing gas treatment procedure 8102 can be performed simultaneously with a procedure, and can be performed before the formation of the metal layer 106 ( After gasification of the metal barrier layer is formed (after 1042), either the metal layer 106 is formed, or after the titanium metal layer forming the second metal barrier layer is formed, the second metal barrier layer is formed. After the layer of titanium nitride 1082. According to the present invention, the modification method of this embodiment is the gas treatment procedure of step 3102, and the nitrogen-containing gas treatment procedure can be coordinated—the processing procedure is performed simultaneously and can be performed before the metal layer (metal barrier layer) is formed. After titanium nitride 1042), or after titanium 1 0 8 1 forming the first barrier layer, the formula θ A > 丨 or 疋 is applied on titanium nitride 1 0 82 forming the second gold M layer after that.珩 到 ^ The modification procedure of the present invention includes 1 # 士 • The heat treatment method, the sentence includes rapid cooling, and the metal layer is modified. 2 · Change the w layer with the person ^ # 括 含 Ｍ — $ nitrogen gas treatment. The implementation examples are described separately in the text before implementation, or they can be combined and implemented. Although the present invention discloses the scope of the present invention as described above, any person skilled in the art can form nitrogen into gold to form the second gold-containing heat treatment—after that, or the nitrogen-containing electric paddle ~ the second gold F and bake or The use of metal is not intended to be limited without departing from the invention.
0702-9528TWf(Nl) ； 91P74 ； Felicia.ptd0702-9528TWf (Nl); 91P74; Felicia.ptd
200428532200428532
0702-9528TWf(Nl) ； 91P74 ； Felicia.ptd 第13頁 200428532 圖式簡單說明 第1圖至第4圖係顯示根據本發明之金屬層改質方法之 一較佳實施利之製程剖面圖。 【符號說明】 100〜半導體基底； 1 0 4〜第一金屬阻障層； 1 0 4 1〜鈦； 1 0 4 2〜氮化鈦； 1 0 6〜金屬層； S10Q〜熱處理程序； S102〜含氮氣體處理程序； 108〜第二金屬阻障層； 1 0 8卜鈦； 1 0 8 2〜氮化鈦。0702-9528TWf (Nl); 91P74; Felicia.ptd Page 13 200428532 Brief Description of Drawings Figures 1 to 4 are cross-sectional views of a preferred embodiment of a method for modifying a metal layer according to the present invention. [Symbol description] 100 ~ semiconductor substrate; 104 ~ first metal barrier layer; 104 ~ 1 ~ titanium; 104 ~ 2 ~ titanium nitride; 106 ~ metal layer; S10Q ~ heat treatment program; S102 ~ Nitrogen-containing gas treatment program; 108 ~ second metal barrier layer; 108 titanium; 1008 2 ~ titanium nitride.
0702-9528TWf(Nl) ； 91P74 ； Felicia.ptd 第14頁0702-9528TWf (Nl); 91P74; Felicia.ptd page 14
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92115012A TW200428532A (en) | 2003-06-03 | 2003-06-03 | Method of modifying conductive wiring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92115012A TW200428532A (en) | 2003-06-03 | 2003-06-03 | Method of modifying conductive wiring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200428532A true TW200428532A (en) | 2004-12-16 |
Family
ID=52341472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92115012A TW200428532A (en) | 2003-06-03 | 2003-06-03 | Method of modifying conductive wiring |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200428532A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI418516B (en) * | 2010-05-04 | 2013-12-11 | Nat Univ Tsing Hua | Nanoparticle film and forming method and application thereof |
| US11721558B2 (en) | 2016-12-19 | 2023-08-08 | Lam Research Corporation | Designer atomic layer etching |
| TWI828995B (en) * | 2015-08-07 | 2024-01-11 | 美商蘭姆研究公司 | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
-
2003
- 2003-06-03 TW TW92115012A patent/TW200428532A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI418516B (en) * | 2010-05-04 | 2013-12-11 | Nat Univ Tsing Hua | Nanoparticle film and forming method and application thereof |
| TWI828995B (en) * | 2015-08-07 | 2024-01-11 | 美商蘭姆研究公司 | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US11721558B2 (en) | 2016-12-19 | 2023-08-08 | Lam Research Corporation | Designer atomic layer etching |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104733288B (en) | Method for processing semiconductor devices | |
| JPH0752733B2 (en) | Method of forming wiring structure | |
| US8163094B1 (en) | Method to improve indium bump bonding via indium oxide removal using a multi-step plasma process | |
| JPH04324929A (en) | Manufacture of semiconductor device | |
| JP2004523889A5 (en) | ||
| JP2002124487A (en) | Method of forming silicide | |
| US3562040A (en) | Method of uniformally and rapidly etching nichrome | |
| JP2789332B2 (en) | Structure of metal wiring and method of forming the same | |
| TW200428532A (en) | Method of modifying conductive wiring | |
| JPH02163939A (en) | Method of metallizing | |
| JPH11145279A (en) | Pin hole removal method of silicon nitride protective film | |
| JPH04100221A (en) | Manufacture of semiconductor device | |
| US5885898A (en) | Method for forming diffusion barrier layer | |
| JP2004079606A5 (en) | ||
| CN109911843B (en) | Method for manufacturing metal film pattern | |
| JP3109091B2 (en) | Method for manufacturing semiconductor device | |
| US6699789B2 (en) | Metallization process to reduce stress between Al-Cu layer and titanium nitride layer | |
| JPS59103375A (en) | Manufacture for semiconductor device with shottky junction | |
| JPS61156872A (en) | Semiconductor device | |
| JP2005026612A (en) | Semiconductor device | |
| TW451415B (en) | Manufacturing method for metal interconnection | |
| JPS6384154A (en) | Manufacture of semiconductor device | |
| TW477050B (en) | Method to avoid generating aluminum whisker defect in the manufacturing process of W-plug structure | |
| JPH0799193A (en) | Manufacture of semiconductor device | |
| JPH0410572A (en) | Semiconductor integrated circuit device and manufacture thereof |