JPS59103375A - Manufacture for semiconductor device with shottky junction - Google Patents
Manufacture for semiconductor device with shottky junctionInfo
- Publication number
- JPS59103375A JPS59103375A JP21235782A JP21235782A JPS59103375A JP S59103375 A JPS59103375 A JP S59103375A JP 21235782 A JP21235782 A JP 21235782A JP 21235782 A JP21235782 A JP 21235782A JP S59103375 A JPS59103375 A JP S59103375A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- schottky
- titanium
- heat treatment
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000012298 atmosphere Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 3
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims abstract 3
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 abstract description 15
- 239000010936 titanium Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910018885 Pt—Au Inorganic materials 0.000 abstract description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- GNKTZDSRQHMHLZ-UHFFFAOYSA-N [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] Chemical compound [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] GNKTZDSRQHMHLZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910021341 titanium silicide Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018949 PtAu Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、特に耐熱性の優れたショットキー・バリア特
性を利用するシリコン半導体装置（ここでショットキー
・バリアーダイオードを例にとって不
胎才す）においては、シリコンと金属間のバリアーハイ
ドの大きさによシ特性が決定される。しかし、実際に利
用出来る金属の種類は限られており、また、４５０“Ｃ
以上の高温に耐える、いわゆる耐熱性の良好なバリアー
については、その数ははとんど無くなってくる。従って
バリアーハイドを変える為、或は耐熱性の良好なバリア
ーを得る為、金属シリサイド層をバリアー金属に用いる
ことが考えられている。特にいわゆる剛大金属のシリサ
イドは非常に有効であることが公約となっている。DETAILED DESCRIPTION OF THE INVENTION The present invention particularly relates to a silicon semiconductor device (herein, a Schottky barrier diode is taken as an example) that utilizes Schottky barrier properties with excellent heat resistance. The characteristics are determined by the size of the barrier hide in between. However, the types of metals that can actually be used are limited, and 450"C
The number of so-called good heat-resistant barriers that can withstand high temperatures above this point is rapidly disappearing. Therefore, in order to change the barrier hide or obtain a barrier with good heat resistance, it has been considered to use a metal silicide layer as a barrier metal. In particular, silicide of so-called rigid metals has been promised to be extremely effective.
しかし、ノリサイドにおいては、金属とシリコンを反応
させる温度によてショットキー特性が変化し、半導体装
置として使用するにはある制限が出てぐる。However, in nolicide, the Schottky characteristics change depending on the temperature at which the metal and silicon are reacted, and there are certain limitations on its use as a semiconductor device.
本発明の目的は、特性のバラツキが少なく、耐熱性のバ
リア金属を有する半導体装置を提供することにある。An object of the present invention is to provide a semiconductor device having a heat-resistant barrier metal with less variation in characteristics.
本発明によれば、半ｍ体上に耐火性金属、特にチタニウ
ムを形成し、５００乃至６５０℃の非酸化性雰囲気で熱
処理することを特徴とする。According to the present invention, a refractory metal, particularly titanium, is formed on the semi-mold body and heat treated in a non-oxidizing atmosphere at 500 to 650°C.
第１図は、金軽チタンを＜ｉ １ｉ＞シリコン基板に蒸
着により形成し、４５０℃乃至７５０℃まで５０℃ステ
ップでＮ、雰囲気中にて３０分熱処理した時のショット
キー・バリアー特性を示している。これによると、バリ
アーハイド（φｂ）は５００℃を境にして大きく変化し
、さらに、７００℃以上にて特性のバラツキが大きくな
っている。即ち、５５０〜６５０℃にて非常に特性の安
定した状態が得られるのである。Figure 1 shows the Schottky barrier properties when gold-light titanium was formed on a <i 1i> silicon substrate by vapor deposition and heat-treated in a N atmosphere for 30 minutes from 450°C to 750°C in 50°C steps. ing. According to this, the barrier hide (φb) changes significantly after 500°C, and furthermore, the variation in properties becomes large at 700°C or higher. That is, very stable properties can be obtained at 550 to 650°C.
これを実施例としてシリコンショットキーバリアーダイ
オードを例にとって説明する。すなわち、第２図（ａ）
はＮ／Ｎ＋ シリコン基板ｌに熱酸化によりシリコン酸
化膜２を形成し、写真食刻法にて開口部３を形成した状
態を示す。次に、第２図（ｂ）のように、基板全面にチ
タニウム層４を蒸湘・又はスパッタ法により３００〜１
００ＯＡ付着し、さらに写真食刻法により、第２図（Ｃ
）のように、フォトレジスト５をバターニングし、フォ
トレジスト５をマスクにチタニウム４を例えばＨＦ／Ｈ
，０＝ ｉ １５ の液にてエツチングする。この後
、フォトレジスト５をハクリ剤にて除去しシリコン基板
を６５０℃のＮＱ雰囲気中にて熱処理する。とれによっ
て、チタンシリサイド層６が形成される（第２図（ｄ）
）。この上に、例えば’ｌ’ ｉ −ｐ ｔ −Ａ ｕ
動電極層７を形成しく第２図（ｅ））、裏面にもＴ ｉ
−Ｐ ｔ−Ａｕ等の電極８を形成する（第２図（ｆ）
）。This will be explained by taking a silicon Schottky barrier diode as an example. That is, Fig. 2(a)
1 shows a state in which a silicon oxide film 2 is formed on an N/N+ silicon substrate 1 by thermal oxidation, and an opening 3 is formed by photolithography. Next, as shown in FIG. 2(b), a titanium layer 4 of 30 to 1
00OA was attached, and then photoetching was performed to create the image shown in Figure 2 (C
), the photoresist 5 is patterned, and titanium 4 is coated with, for example, HF/H using the photoresist 5 as a mask.
, 0=i 15 . Thereafter, the photoresist 5 is removed using a peeling agent, and the silicon substrate is heat-treated in an NQ atmosphere at 650°C. A titanium silicide layer 6 is formed by the peeling (Fig. 2(d)).
). On top of this, for example 'l' i -p t -A u
To form a dynamic electrode layer 7 (FIG. 2(e)), Ti
- Form the electrode 8 of Pt-Au etc. (Fig. 2(f)
).
このようにして形成されたチタン・シリサイドによるシ
ョットキーバリアーダイオードは、６５０°Ｃ程度に加
熱しても特性変化が全く無く、耐熱性に優れたダイオー
ドが得られる。The titanium silicide Schottky barrier diode formed in this way does not change its characteristics at all even when heated to about 650°C, and a diode with excellent heat resistance can be obtained.
以上示したように、本発明により形成したショットキー
バリアーは特性的に均一でかつ耐熱性に優れたものであ
シ、よシ信頼度の向上されたダイオード或はＬＳＩに適
用出来るものである。尚、本発明はショットキーダイオ
ード以外の例えばトランジスタ等のショットキー半導体
装置すべて適用できるものである。As shown above, the Schottky barrier formed according to the present invention has uniform characteristics and excellent heat resistance, and can be applied to diodes or LSIs with significantly improved reliability. The present invention is applicable to all Schottky semiconductor devices such as transistors other than Schottky diodes.
第１図は、横軸に示した温度により形成したチタニウム
・シリサ、イドのショットキー特性を示したものであシ
、上からＶＲ（１１＜＝１μＡ） Ｆ ＶＦ（ＩＦ＝１
ｍＡ） Ｆφｂ、Ｎ値を示している。第２図は、本考案
の一実施例に基づく、チタニウム・シリサイドによるシ
ョットキーバリアーダイオードの製法を示している。
１・・・・・・Ｎ／Ｎ＋シリコン基板、２・・・・・・
シリコン酸化膜、３・・・・・・開口部、４・・・・・
・チタニウム層、５・・・・・・フォトレジスト層（パ
ターニング済）、６・・・・・・チタニウム・シリサイ
ド層、７・・・・・・Ｔｉ ＰｔＡｕ電極、８・・・
・・・Ｔ ｉ −Ｐ ｔ−Ａｕ裏面電極。Figure 1 shows the Schottky characteristics of titanium silica and oxide formed at the temperatures indicated on the horizontal axis.
mA) Fφb, N value is shown. FIG. 2 shows a method for manufacturing a titanium silicide Schottky barrier diode according to an embodiment of the present invention. 1...N/N+silicon substrate, 2...
Silicon oxide film, 3...opening, 4...
・Titanium layer, 5... Photoresist layer (patterned), 6... Titanium silicide layer, 7... Ti PtAu electrode, 8...
...T i -P t-Au back electrode.
Claims (1)
形成し、５５０〜６５０℃の非酸化性雰囲気中にて熱処
理を行なうことを特徴とする半導体装置の製造方法。A method for manufacturing a semiconductor device, comprising forming a heat-resistant metal forming a Schottky junction on a semiconductor, and performing heat treatment in a non-oxidizing atmosphere at 550 to 650°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21235782A JPS59103375A (en) | 1982-12-03 | 1982-12-03 | Manufacture for semiconductor device with shottky junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21235782A JPS59103375A (en) | 1982-12-03 | 1982-12-03 | Manufacture for semiconductor device with shottky junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59103375A true JPS59103375A (en) | 1984-06-14 |
Family
ID=16621200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21235782A Pending JPS59103375A (en) | 1982-12-03 | 1982-12-03 | Manufacture for semiconductor device with shottky junction |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59103375A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04226025A (en) * | 1990-04-16 | 1992-08-14 | Applied Materials Inc | Method forming titanium silicide con- ducting layer on silicon wafer |
| JPH05102075A (en) * | 1991-03-29 | 1993-04-23 | Applied Materials Inc | Method for forming tungsten contact having low resistance and low defect density for silicon semiconductor wafer |
| JPH07111252A (en) * | 1990-04-20 | 1995-04-25 | Applied Materials Inc | Method for formation of titanium nitride on semiconductor wafer by reaction of nitrogen-contained gas with titanium in integrated treatment system |
| JP2010068008A (en) * | 2009-12-24 | 2010-03-25 | Mitsubishi Electric Corp | Method of manufacturing silicon carbide schottky barrier diode |
| US8377811B2 (en) | 2007-10-11 | 2013-02-19 | Mitsubishi Electric Corporation | Method for manufacturing silicon carbide semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5318973A (en) * | 1976-08-05 | 1978-02-21 | Oki Electric Ind Co Ltd | Production of two kinds of schottky barrier diodes |
| JPS5790938A (en) * | 1980-11-27 | 1982-06-05 | Toshiba Corp | Manufacture of semiconductor device |
-
1982
- 1982-12-03 JP JP21235782A patent/JPS59103375A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5318973A (en) * | 1976-08-05 | 1978-02-21 | Oki Electric Ind Co Ltd | Production of two kinds of schottky barrier diodes |
| JPS5790938A (en) * | 1980-11-27 | 1982-06-05 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04226025A (en) * | 1990-04-16 | 1992-08-14 | Applied Materials Inc | Method forming titanium silicide con- ducting layer on silicon wafer |
| JPH07111252A (en) * | 1990-04-20 | 1995-04-25 | Applied Materials Inc | Method for formation of titanium nitride on semiconductor wafer by reaction of nitrogen-contained gas with titanium in integrated treatment system |
| JPH05102075A (en) * | 1991-03-29 | 1993-04-23 | Applied Materials Inc | Method for forming tungsten contact having low resistance and low defect density for silicon semiconductor wafer |
| US8377811B2 (en) | 2007-10-11 | 2013-02-19 | Mitsubishi Electric Corporation | Method for manufacturing silicon carbide semiconductor device |
| JP2010068008A (en) * | 2009-12-24 | 2010-03-25 | Mitsubishi Electric Corp | Method of manufacturing silicon carbide schottky barrier diode |
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