JPS61142739A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS61142739A
JPS61142739A JP26441984A JP26441984A JPS61142739A JP S61142739 A JPS61142739 A JP S61142739A JP 26441984 A JP26441984 A JP 26441984A JP 26441984 A JP26441984 A JP 26441984A JP S61142739 A JPS61142739 A JP S61142739A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
film
metal
surface
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26441984A
Inventor
Shigeya Mori
Shohei Shima
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268

Abstract

PURPOSE:To implement a highly reliable electrode, by forming a high melting point metal layer on an insulating film and on the surface of a contact hole part, thereafter forming a nitride metal from the surface of the metal by heat treatment, forming silicide at the interface of the metal and a substrate, and then forming a wiring metal on the nitride metal. CONSTITUTION:A diffused layer 2 is formed on an Si substrate, and a P-N junction is formed. Then, an oxide film 3 is provided on the surface of the Si substrate. A contact hole is provided in the oxide film 3 on the diffused layer 2. Ti is deposited on the entire surface, and a Ti film 4 is formed. Then, the substrate 1 is heated, and a titanium nitride film 6 is formed on the surface of the Ti film 4. At the same time, a titanium silicide layer 5 is formed at the interface between the Ti film 4 and the substrate Si. An Al wiring metal film 7 is formed on the entire surface of the titanium nitride film 6. Thereafter, the Al wiring metal film 7 and the Ti film 4 are continuously etched, and a wiring pattern is formed. In this multilayer structure, resistance becomes low. Since the titanium nitride layer 6 is formed, high contact resistance with the Al wiring metal layer 7 can be prevented.
JP26441984A 1984-12-17 1984-12-17 Manufacture of semiconductor device Pending JPS61142739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26441984A JPS61142739A (en) 1984-12-17 1984-12-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26441984A JPS61142739A (en) 1984-12-17 1984-12-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS61142739A true true JPS61142739A (en) 1986-06-30

Family

ID=17402908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26441984A Pending JPS61142739A (en) 1984-12-17 1984-12-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS61142739A (en)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183942A (en) * 1985-02-08 1986-08-16 Fujitsu Ltd Manufacture of semiconductor device
JPS61212041A (en) * 1985-03-18 1986-09-20 Hitachi Ltd Formation of metal silicide electrode and wiring
JPS6232610A (en) * 1985-08-05 1987-02-12 Fujitsu Ltd Manufacture of semiconductor device
JPS6384024A (en) * 1986-09-26 1988-04-14 Seiko Epson Corp Manufacture of semiconductor device
JPS63175420A (en) * 1987-01-14 1988-07-19 Nec Corp Manufacture of semiconductor device
JPS63193522A (en) * 1987-02-05 1988-08-10 Nec Corp Manufacture of semiconductor device
EP0279588A2 (en) * 1987-02-19 1988-08-24 Advanced Micro Devices, Inc. Contact in a contact hole in a semiconductor and method of producing same
US4811076A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Device and process with doubled capacitors
US4811078A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Integrated circuit device and process with tin capacitors
JPH01298765A (en) * 1988-05-27 1989-12-01 Fujitsu Ltd Semiconductor device and manufacture thereof
US4890141A (en) * 1985-05-01 1989-12-26 Texas Instruments Incorporated CMOS device with both p+ and n+ gates
US4894693A (en) * 1985-05-01 1990-01-16 Tigelaar Howard L Single-polysilicon dram device and process
JPH02238246A (en) * 1989-03-09 1990-09-20 Takagi Ind Co Ltd Hot-water/water supply device
US4960732A (en) * 1987-02-19 1990-10-02 Advanced Micro Devices, Inc. Contact plug and interconnect employing a barrier lining and a backfilled conductor material
JPH04296020A (en) * 1991-03-25 1992-10-20 Nec Corp Semiconductor device and manufactuer thereof
JPH0582772A (en) * 1991-09-20 1993-04-02 Mitsubishi Electric Corp Semiconductor device and its manufacture
US5371041A (en) * 1988-02-11 1994-12-06 Sgs-Thomson Microelectronics, Inc. Method for forming a contact/VIA
US5374592A (en) * 1992-09-22 1994-12-20 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum metal contact
US5395795A (en) * 1991-04-09 1995-03-07 Samsung Electronics Co., Ltd. Method for fabricating a semiconductor device
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US5930673A (en) * 1990-11-05 1999-07-27 Stmicroelectronics, Inc. Method for forming a metal contact
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US6278150B1 (en) 1996-09-05 2001-08-21 Mitsubishi Denki Kabushiki Kaisha Conductive layer connecting structure and method of manufacturing the same
US6287963B1 (en) 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
US6617242B1 (en) * 1989-11-30 2003-09-09 Stmicroelectronics, Inc. Method for fabricating interlevel contacts of aluminum/refractory metal alloys

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183942A (en) * 1985-02-08 1986-08-16 Fujitsu Ltd Manufacture of semiconductor device
JPS61212041A (en) * 1985-03-18 1986-09-20 Hitachi Ltd Formation of metal silicide electrode and wiring
US4894693A (en) * 1985-05-01 1990-01-16 Tigelaar Howard L Single-polysilicon dram device and process
US4890141A (en) * 1985-05-01 1989-12-26 Texas Instruments Incorporated CMOS device with both p+ and n+ gates
US4811078A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Integrated circuit device and process with tin capacitors
US4811076A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Device and process with doubled capacitors
JPS6232610A (en) * 1985-08-05 1987-02-12 Fujitsu Ltd Manufacture of semiconductor device
JPS6384024A (en) * 1986-09-26 1988-04-14 Seiko Epson Corp Manufacture of semiconductor device
JPS63175420A (en) * 1987-01-14 1988-07-19 Nec Corp Manufacture of semiconductor device
JPS63193522A (en) * 1987-02-05 1988-08-10 Nec Corp Manufacture of semiconductor device
EP0279588A2 (en) * 1987-02-19 1988-08-24 Advanced Micro Devices, Inc. Contact in a contact hole in a semiconductor and method of producing same
US4960732A (en) * 1987-02-19 1990-10-02 Advanced Micro Devices, Inc. Contact plug and interconnect employing a barrier lining and a backfilled conductor material
US5371041A (en) * 1988-02-11 1994-12-06 Sgs-Thomson Microelectronics, Inc. Method for forming a contact/VIA
JPH01298765A (en) * 1988-05-27 1989-12-01 Fujitsu Ltd Semiconductor device and manufacture thereof
US5384485A (en) * 1988-05-27 1995-01-24 Fujitsu Limited Contact structure for connecting an electrode to a semiconductor
US5512516A (en) * 1988-05-27 1996-04-30 Fujitsu Limited Contact structure for connecting an electrode to a semiconductor device and a method of forming the same
JPH02238246A (en) * 1989-03-09 1990-09-20 Takagi Ind Co Ltd Hot-water/water supply device
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US5976969A (en) * 1989-11-30 1999-11-02 Stmicroelectronics, Inc. Method for forming an aluminum contact
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US6617242B1 (en) * 1989-11-30 2003-09-09 Stmicroelectronics, Inc. Method for fabricating interlevel contacts of aluminum/refractory metal alloys
US5930673A (en) * 1990-11-05 1999-07-27 Stmicroelectronics, Inc. Method for forming a metal contact
US6287963B1 (en) 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
JPH04296020A (en) * 1991-03-25 1992-10-20 Nec Corp Semiconductor device and manufactuer thereof
US5395795A (en) * 1991-04-09 1995-03-07 Samsung Electronics Co., Ltd. Method for fabricating a semiconductor device
JPH0582772A (en) * 1991-09-20 1993-04-02 Mitsubishi Electric Corp Semiconductor device and its manufacture
US5374592A (en) * 1992-09-22 1994-12-20 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum metal contact
US6433435B2 (en) 1993-11-30 2002-08-13 Stmicroelectronics, Inc. Aluminum contact structure for integrated circuits
US6278150B1 (en) 1996-09-05 2001-08-21 Mitsubishi Denki Kabushiki Kaisha Conductive layer connecting structure and method of manufacturing the same

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