JP2017157836A5 - - Google Patents
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- JP2017157836A5 JP2017157836A5 JP2017035708A JP2017035708A JP2017157836A5 JP 2017157836 A5 JP2017157836 A5 JP 2017157836A5 JP 2017035708 A JP2017035708 A JP 2017035708A JP 2017035708 A JP2017035708 A JP 2017035708A JP 2017157836 A5 JP2017157836 A5 JP 2017157836A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- substrate surface
- exposing
- halogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 68
- 239000010410 layer Substances 0.000 claims description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000009832 plasma treatment Methods 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 239000002356 single layer Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000003446 ligand Substances 0.000 claims description 6
- 230000004048 modification Effects 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 5
- XDRPDDZWXGILRT-FDGPNNRMSA-L bis[[(z)-4-oxopent-2-en-2-yl]oxy]tin Chemical compound [Sn+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O XDRPDDZWXGILRT-FDGPNNRMSA-L 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims 14
- 150000002367 halogens Chemical class 0.000 claims 14
- 150000004696 coordination complex Chemical class 0.000 claims 6
- 229910052731 fluorine Inorganic materials 0.000 description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- 239000011737 fluorine Substances 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910001512 metal fluoride Inorganic materials 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical group [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662302003P | 2016-03-01 | 2016-03-01 | |
| US62/302,003 | 2016-03-01 | ||
| US201662438978P | 2016-12-23 | 2016-12-23 | |
| US62/438,978 | 2016-12-23 | ||
| US15/435,838 | 2017-02-17 | ||
| US15/435,838 US10256108B2 (en) | 2016-03-01 | 2017-02-17 | Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017157836A JP2017157836A (ja) | 2017-09-07 |
| JP2017157836A5 true JP2017157836A5 (enExample) | 2020-04-30 |
| JP6853065B2 JP6853065B2 (ja) | 2021-03-31 |
Family
ID=59723668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017035708A Active JP6853065B2 (ja) | 2016-03-01 | 2017-02-28 | プラズマおよび蒸気処理の組み合わせを用いたａｌ２ｏ３の原子層エッチング |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10256108B2 (enExample) |
| JP (1) | JP6853065B2 (enExample) |
| KR (1) | KR102785607B1 (enExample) |
| CN (2) | CN107146755B (enExample) |
| TW (1) | TWI750151B (enExample) |
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| US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
| US10229837B2 (en) * | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| US10982336B2 (en) * | 2016-04-01 | 2021-04-20 | Wayne State University | Method for etching a metal surface |
| US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| TWI757545B (zh) | 2017-09-15 | 2022-03-11 | 日商關東電化工業股份有限公司 | 使用酸鹵化物之原子層蝕刻 |
| US10354887B2 (en) * | 2017-09-27 | 2019-07-16 | Lam Research Corporation | Atomic layer etching of metal oxide |
| KR102440504B1 (ko) * | 2017-10-27 | 2022-09-06 | 현대자동차주식회사 | 이종 재질 접합을 위한 알루미늄 표면 처리 방법 |
| US20190131130A1 (en) * | 2017-10-31 | 2019-05-02 | Lam Research Corporation | Etching metal oxide substrates using ale and selective deposition |
| KR102016927B1 (ko) | 2017-11-01 | 2019-10-21 | 한국기초과학지원연구원 | 원자층 연마 방법 및 이를 위한 연마 장치 |
| US10529543B2 (en) * | 2017-11-15 | 2020-01-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etch process with rotatable shower head |
| KR102476262B1 (ko) | 2017-12-14 | 2022-12-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 에칭 잔류물이 더 적게 금속 산화물들을 에칭하는 방법들 |
| JP6679642B2 (ja) * | 2018-03-27 | 2020-04-15 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| EP3776636B1 (en) | 2018-03-30 | 2025-05-07 | Lam Research Corporation | Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials |
| US10770305B2 (en) * | 2018-05-11 | 2020-09-08 | Tokyo Electron Limited | Method of atomic layer etching of oxide |
| WO2019226341A1 (en) * | 2018-05-25 | 2019-11-28 | Lam Research Corporation | Thermal atomic layer etch with rapid temperature cycling |
| KR102735902B1 (ko) | 2018-06-13 | 2024-11-28 | 램 리써치 코포레이션 | 고 종횡비 구조체들의 효율적인 세정 및 에칭 |
| EP3821457A4 (en) * | 2018-07-09 | 2022-04-13 | Lam Research Corporation | ETCHING ATOMIC LAYER ETCHING USING ELECTRON EXCITATION |
| US10840082B2 (en) * | 2018-08-09 | 2020-11-17 | Lam Research Corporation | Method to clean SnO2 film from chamber |
| JP7202230B2 (ja) | 2019-03-20 | 2023-01-11 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| US11056347B2 (en) * | 2019-05-28 | 2021-07-06 | Tokyo Electron Limited | Method for dry etching compound materials |
| WO2020252097A1 (en) * | 2019-06-11 | 2020-12-17 | Applied Materials, Inc. | Etching of metal oxides using fluorine and metal halides |
| WO2021022303A1 (en) | 2019-07-31 | 2021-02-04 | Lam Research Corporation | Radio frequency power generator having multiple output ports |
| CN110690134B (zh) * | 2019-09-12 | 2022-07-01 | 长江存储科技有限责任公司 | 多站式沉积工艺的串气检测方法、设备及可读存储介质 |
| US12080562B2 (en) | 2019-09-17 | 2024-09-03 | Lam Research Corporation | Atomic layer etch and ion beam etch patterning |
| CN120280325A (zh) | 2019-12-02 | 2025-07-08 | 朗姆研究公司 | 射频辅助等离子体生成中的阻抗变换 |
| KR102733594B1 (ko) * | 2019-12-18 | 2024-11-25 | 주식회사 원익아이피에스 | 기판 처리 방법 |
| WO2021252353A1 (en) * | 2020-06-12 | 2021-12-16 | Lam Research Corporation | Control of plasma formation by rf coupling structures |
| KR20230021741A (ko) | 2020-06-15 | 2023-02-14 | 램 리써치 코포레이션 | 챔버를 세정하는 방법 |
| US11430893B2 (en) * | 2020-07-10 | 2022-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
| JP7174016B2 (ja) * | 2020-07-16 | 2022-11-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
| US11282711B2 (en) * | 2020-07-31 | 2022-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma-assisted etching of metal oxides |
| US11823910B2 (en) * | 2020-07-31 | 2023-11-21 | Tokyo Electron Limited | Systems and methods for improving planarity using selective atomic layer etching (ALE) |
| JP7624833B2 (ja) * | 2020-12-28 | 2025-01-31 | 株式会社Ｓｃｒｅｅｎホールディングス | 配線形成方法および基板処理装置 |
| JP7739434B2 (ja) * | 2021-02-03 | 2025-09-16 | ラム リサーチ コーポレーション | 原子層エッチングにおけるエッチング選択性の制御 |
| US20230274949A1 (en) * | 2021-03-18 | 2023-08-31 | Lam Research Corporation | Etching of indium gallium zinc oxide |
| KR102646730B1 (ko) * | 2021-10-06 | 2024-03-12 | 세메스 주식회사 | 원자층 식각 방법 |
| CN114664631A (zh) * | 2022-04-21 | 2022-06-24 | 江苏鹏举半导体设备技术有限公司 | 一种原子层刻蚀设备及刻蚀方法 |
| JP7709946B2 (ja) * | 2022-09-22 | 2025-07-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置 |
| TW202443705A (zh) * | 2023-04-06 | 2024-11-01 | 美商蘭姆研究公司 | 使用基於矽烷的化學品執行原子層蝕刻 |
| JP2025076893A (ja) * | 2023-11-02 | 2025-05-16 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、及びプログラム |
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| US5389196A (en) | 1992-01-30 | 1995-02-14 | Massachusetts Institute Of Technology | Methods for fabricating three-dimensional micro structures |
| US5368687A (en) | 1993-03-15 | 1994-11-29 | Micron Technology, Inc. | Semiconductor processing method of etching insulating inorganic metal oxide materials and method of cleaning metals from the surface of semiconductor wafers |
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| US7357138B2 (en) | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
| WO2004030049A2 (en) | 2002-09-27 | 2004-04-08 | Tokyo Electron Limited | A method and system for etching high-k dielectric materials |
| WO2005078083A1 (en) | 2004-02-04 | 2005-08-25 | California Institute Of Technology | Ultra-smooth microfabricated pores on a planar substrate for integrated patch-clamping |
| US7642195B2 (en) * | 2005-09-26 | 2010-01-05 | Applied Materials, Inc. | Hydrogen treatment to improve photoresist adhesion and rework consistency |
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| TW200739716A (en) * | 2006-02-27 | 2007-10-16 | Applied Materials Inc | Method for controlling corrosion of a substrate |
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| US8058179B1 (en) * | 2008-12-23 | 2011-11-15 | Novellus Systems, Inc. | Atomic layer removal process with higher etch amount |
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| US9865501B2 (en) * | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
| TWI591211B (zh) | 2013-03-13 | 2017-07-11 | 應用材料股份有限公司 | 蝕刻包含過渡金屬的膜之方法 |
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| US9773683B2 (en) * | 2014-06-09 | 2017-09-26 | American Air Liquide, Inc. | Atomic layer or cyclic plasma etching chemistries and processes |
| JP2018500767A (ja) | 2014-12-18 | 2018-01-11 | ザ リージェンツ オブ ザ ユニバーシティ オブ コロラド，ア ボディー コーポレイトＴＨＥ ＲＥＧＥＮＴＳ ＯＦ ＴＨＥ ＵＮＩＶＥＲＳＩＴＹ ＯＦ ＣＯＬＯＲＡＤＯ，ａ ｂｏｄｙ ｃｏｒｐｏｒａｔｅ | 逐次的な自己制御熱反応を使用する原子層エッチング（ａｌｅ）の新規の方法 |
| KR102510737B1 (ko) * | 2015-03-30 | 2023-03-15 | 도쿄엘렉트론가부시키가이샤 | 원자층 에칭 방법 |
-
2017
- 2017-02-17 US US15/435,838 patent/US10256108B2/en active Active
- 2017-02-24 TW TW106106310A patent/TWI750151B/zh active
- 2017-02-27 KR KR1020170025532A patent/KR102785607B1/ko active Active
- 2017-02-28 JP JP2017035708A patent/JP6853065B2/ja active Active
- 2017-03-01 CN CN201710117229.7A patent/CN107146755B/zh active Active
- 2017-03-01 CN CN202110082157.3A patent/CN113013032B/zh active Active
-
2019
- 2019-02-28 US US16/289,428 patent/US10784118B2/en active Active
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