JP2019510379A5 - - Google Patents
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- Publication number
- JP2019510379A5 JP2019510379A5 JP2018551122A JP2018551122A JP2019510379A5 JP 2019510379 A5 JP2019510379 A5 JP 2019510379A5 JP 2018551122 A JP2018551122 A JP 2018551122A JP 2018551122 A JP2018551122 A JP 2018551122A JP 2019510379 A5 JP2019510379 A5 JP 2019510379A5
- Authority
- JP
- Japan
- Prior art keywords
- etching solution
- silicon
- wet
- phosphoric acid
- wet etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 42
- 238000005530 etching Methods 0.000 claims 32
- 238000001039 wet etching Methods 0.000 claims 30
- 238000000034 method Methods 0.000 claims 27
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 21
- 239000000377 silicon dioxide Substances 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 11
- 239000007795 chemical reaction product Substances 0.000 claims 11
- 239000010703 silicon Substances 0.000 claims 11
- 229910052710 silicon Inorganic materials 0.000 claims 10
- 239000000126 substance Substances 0.000 claims 9
- 238000012544 monitoring process Methods 0.000 claims 8
- 238000012993 chemical processing Methods 0.000 claims 7
- 238000006460 hydrolysis reaction Methods 0.000 claims 5
- 238000003486 chemical etching Methods 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 2
- 239000002210 silicon-based material Substances 0.000 claims 2
- 239000008119 colloidal silica Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662315559P | 2016-03-30 | 2016-03-30 | |
| US201662315632P | 2016-03-30 | 2016-03-30 | |
| US62/315,632 | 2016-03-30 | ||
| US62/315,559 | 2016-03-30 | ||
| US15/467,939 | 2017-03-23 | ||
| US15/467,939 US10325779B2 (en) | 2016-03-30 | 2017-03-23 | Colloidal silica growth inhibitor and associated method and system |
| US15/467,973 | 2017-03-23 | ||
| US15/467,973 US10515820B2 (en) | 2016-03-30 | 2017-03-23 | Process and apparatus for processing a nitride structure without silica deposition |
| PCT/US2017/024128 WO2017172533A1 (en) | 2016-03-30 | 2017-03-24 | Process and apparatus for processing a nitride structure without silica deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019510379A JP2019510379A (ja) | 2019-04-11 |
| JP2019510379A5 true JP2019510379A5 (enExample) | 2020-04-30 |
| JP6715433B2 JP6715433B2 (ja) | 2020-07-01 |
Family
ID=59965112
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018551122A Active JP6715433B2 (ja) | 2016-03-30 | 2017-03-24 | シリカ堆積なしに窒化物構造体を処理するためのプロセス及び装置窒化物構造体を処理するためのプロセス及び装置 |
| JP2018551103A Active JP6942318B2 (ja) | 2016-03-30 | 2017-03-24 | コロイドシリカ成長阻害剤及び関連する方法及びシステム |
| JP2020193008A Withdrawn JP2021040153A (ja) | 2016-03-30 | 2020-11-20 | コロイドシリカ成長阻害剤及び関連する方法及びシステム |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018551103A Active JP6942318B2 (ja) | 2016-03-30 | 2017-03-24 | コロイドシリカ成長阻害剤及び関連する方法及びシステム |
| JP2020193008A Withdrawn JP2021040153A (ja) | 2016-03-30 | 2020-11-20 | コロイドシリカ成長阻害剤及び関連する方法及びシステム |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10325779B2 (enExample) |
| JP (3) | JP6715433B2 (enExample) |
| KR (3) | KR102172305B1 (enExample) |
| CN (2) | CN109072077B (enExample) |
| SG (2) | SG11201808542WA (enExample) |
| TW (3) | TWI720167B (enExample) |
| WO (2) | WO2017172532A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10325779B2 (en) * | 2016-03-30 | 2019-06-18 | Tokyo Electron Limited | Colloidal silica growth inhibitor and associated method and system |
| JP6909620B2 (ja) * | 2017-04-20 | 2021-07-28 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法 |
| US10886290B2 (en) | 2018-07-20 | 2021-01-05 | Tokyo Electron Limited | Etching of silicon nitride and silica deposition control in 3D NAND structures |
| CN109216367B (zh) * | 2018-08-27 | 2021-07-02 | 长江存储科技有限责任公司 | 半导体结构的形成方法 |
| KR102084044B1 (ko) * | 2018-12-24 | 2020-03-03 | 주식회사 세미부스터 | 인산용액 중의 실리콘 농도 분석방법 |
| KR102759372B1 (ko) * | 2019-01-08 | 2025-01-24 | 삼성전자주식회사 | 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법 |
| JP7209556B2 (ja) * | 2019-02-05 | 2023-01-20 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| KR102757685B1 (ko) * | 2019-02-20 | 2025-01-21 | 상하이 인스티튜트 오브 아이씨 매터리얼스 | 습식 화학에 의한 Si3N4 선택성 제거의 필요성 |
| JP2020150126A (ja) * | 2019-03-13 | 2020-09-17 | 東京エレクトロン株式会社 | 混合装置、混合方法および基板処理システム |
| JP6843173B2 (ja) * | 2019-03-29 | 2021-03-17 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
| KR20210007097A (ko) * | 2019-07-10 | 2021-01-20 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
| JP7336956B2 (ja) * | 2019-10-10 | 2023-09-01 | 東京エレクトロン株式会社 | 基板処理システム、及び基板処理方法 |
| KR102583556B1 (ko) * | 2021-01-07 | 2023-10-10 | 세메스 주식회사 | 처리액 공급 장치 및 처리액 공급 장치의 고형 제거 방법 |
| KR102315919B1 (ko) * | 2021-01-26 | 2021-10-22 | 연세대학교 산학협력단 | 비인산계 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법 |
| JP7634387B2 (ja) * | 2021-03-02 | 2025-02-21 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| CN117425717A (zh) * | 2021-05-12 | 2024-01-19 | 恩特格里斯公司 | 选择性蚀刻剂组合物及方法 |
| KR102449897B1 (ko) * | 2022-01-14 | 2022-09-30 | 삼성전자주식회사 | 습식 식각 방법 및 이를 이용한 반도체 소자 제조 방법. |
| CN117954340B (zh) * | 2024-01-10 | 2024-08-02 | 苏州恩腾半导体科技有限公司 | 一种选择性蚀刻方法及装置 |
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-
2017
- 2017-03-23 US US15/467,939 patent/US10325779B2/en active Active
- 2017-03-24 WO PCT/US2017/024123 patent/WO2017172532A1/en not_active Ceased
- 2017-03-24 JP JP2018551122A patent/JP6715433B2/ja active Active
- 2017-03-24 KR KR1020187031146A patent/KR102172305B1/ko active Active
- 2017-03-24 KR KR1020207025916A patent/KR102353264B1/ko active Active
- 2017-03-24 CN CN201780026802.1A patent/CN109072077B/zh active Active
- 2017-03-24 CN CN201780022040.8A patent/CN108885989B/zh active Active
- 2017-03-24 KR KR1020187031140A patent/KR102196944B1/ko active Active
- 2017-03-24 JP JP2018551103A patent/JP6942318B2/ja active Active
- 2017-03-24 SG SG11201808542WA patent/SG11201808542WA/en unknown
- 2017-03-24 SG SG11201808546YA patent/SG11201808546YA/en unknown
- 2017-03-24 WO PCT/US2017/024128 patent/WO2017172533A1/en not_active Ceased
- 2017-03-29 TW TW106110416A patent/TWI720167B/zh active
- 2017-03-29 TW TW109132275A patent/TWI731790B/zh active
- 2017-03-29 TW TW106110443A patent/TWI655274B/zh active
-
2019
- 2019-04-05 US US16/375,984 patent/US10763120B2/en active Active
-
2020
- 2020-11-20 JP JP2020193008A patent/JP2021040153A/ja not_active Withdrawn
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