JP7209556B2 - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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Description
まず、実施形態に係る基板処理装置1の構成について図1を参照して説明する。図1は、基板処理装置1の概略平面図である。なお、以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
次に、エッチング用の処理槽18について、図2を参照しながら説明する。図2は、実施形態に係るエッチング用の処理槽18の構成を示す概略ブロック図である。
つづいて、実施形態に係るエッチング処理について、図3A~図3Dを参照しながら説明する。図3Aは、エッチング処理を行う前のウェハWの断面を示す概略図である。図3Bは、エッチング処理が進んだウェハWの状態を示す概略図である。図3Cは、エッチング処理がさらに進んだウェハWの状態を示す概略図である。図3Dは、エッチング処理が終了したウェハWの状態を示す概略図である。
つづいて、実施形態に係るエッチング処理の詳細について、図4A~図13を参照しながら説明する。図4Aは、実施形態に係るエッチング処理前のウェハWの溝Wa近傍を拡大した断面図である。
つづいて、図14および図15を参照しながら、実施形態に係る基板処理装置1が実行するエッチング処理の詳細について説明する。図14は、実施形態に係るエッチング処理の処理手順を示すフローチャートである。
5 ロット搬送部(搬送部の一例)
7 制御部
18、18A 処理槽(第1処理槽の一例)
18B、18B1~18B3 処理槽(第3処理槽の一例)
20 処理槽(第2処理槽の一例)
W、W1~W3 ウェハ(基板の一例)
SiN シリコン窒化膜
SiO2 シリコン酸化膜
Claims (9)
- シリコン酸化膜およびシリコン窒化膜が形成された基板を、エッチング液によってエッチングする第1エッチング工程と、
前記第1エッチング工程の後に、前記基板において前記シリコン酸化膜で形成されるパターンを、パターン形状加工液によって加工する加工工程と、
前記加工工程の後に、前記基板をエッチング液によってエッチングする第2エッチング工程と、
を含み、
前記第1エッチング工程は、前記シリコン酸化膜で形成されるパターンの先端部が露出するまで実施し、
前記加工工程は、露出した前記先端部を加工する
基板処理方法。 - 前記パターン形状加工液は、前記シリコン窒化膜に対するエッチング能力がないか、またはエッチング能力が低い
請求項1に記載の基板処理方法。 - 前記第1エッチング工程におけるエッチング液の温度は、前記第2エッチング工程におけるエッチング液の温度よりも低く設定される
請求項1または2に記載の基板処理方法。 - 前記第1エッチング工程におけるエッチング液のシリコン濃度は、前記第2エッチング工程におけるエッチング液のシリコン濃度よりも低く設定される
請求項1~3のいずれか一つに記載の基板処理方法。 - 前記第2エッチング工程の後に、前記シリコン酸化膜で形成されるパターンを、パターン形状加工液によって加工する追加工工程をさらに含む
請求項1~4のいずれか一つに記載の基板処理方法。 - 前記エッチング液は、リン酸と、シリコン酸化物の再析出を抑制する添加剤とを含む
請求項1~5のいずれか一つに記載の基板処理方法。 - シリコン酸化膜およびシリコン窒化膜が形成された基板をエッチング液に浸漬することで第1エッチング処理および第2エッチング処理を行う第1処理槽と、
前記基板において前記シリコン酸化膜で形成されるパターンを、パターン形状加工液によって加工する加工処理を行う第2処理槽と、
前記基板を前記第1処理槽および前記第2処理槽に搬送する搬送部と、
前記第1処理槽、前記第2処理槽および前記搬送部を制御する制御部と、
を備え、
前記制御部は、
前記基板を前記第1処理槽に搬送し、前記シリコン酸化膜で形成されるパターンの先端部が露出するまで前記第1エッチング処理を実施し、
前記第1処理槽に搬送された基板を前記第2処理槽に搬送し、露出した前記先端部を加工する前記加工処理を実施し、
前記第2処理槽に搬送された基板を前記第1処理槽に搬送して前記第2エッチング処理を行うよう前記搬送部を制御する
基板処理装置。 - シリコン酸化膜およびシリコン窒化膜が形成された基板をエッチング液に浸漬することでエッチング処理を行う第1処理槽と、
前記基板において前記シリコン酸化膜で形成されるパターンを、パターン形状加工液によって加工する加工処理を行う第2処理槽と、
前記基板をエッチング液に浸漬することでエッチング処理を行う第3処理槽と、
前記基板を前記第1処理槽、前記第2処理槽および前記第3処理槽に搬送する搬送部と、
前記第1処理槽、前記第2処理槽、前記第3処理槽および前記搬送部を制御する制御部と、
を備え、
前記制御部は、
前記基板を前記第1処理槽に搬送し、
前記第1処理槽に搬送された基板を前記第2処理槽に搬送し、
前記第2処理槽に搬送された基板を前記第3処理槽に搬送するよう前記搬送部を制御する
基板処理装置。 - 前記第3処理槽は、前記第1処理槽より多い数設けられる
請求項8に記載の基板処理装置。
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JP2019018684A JP7209556B2 (ja) | 2019-02-05 | 2019-02-05 | 基板処理方法および基板処理装置 |
TW109102423A TWI839449B (zh) | 2019-02-05 | 2020-01-22 | 基板處理方法及基板處理裝置 |
KR1020200010924A KR20200096739A (ko) | 2019-02-05 | 2020-01-30 | 기판 처리 방법 및 기판 처리 장치 |
US16/778,267 US11087992B2 (en) | 2019-02-05 | 2020-01-31 | Substrate processing method and substrate processing apparatus |
CN202010079765.4A CN111524808B (zh) | 2019-02-05 | 2020-02-04 | 基板处理方法和基板处理装置 |
US17/367,975 US20210335621A1 (en) | 2019-02-05 | 2021-07-06 | Substrate processing method and substrate processing apparatus |
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KR102670179B1 (ko) * | 2020-09-09 | 2024-05-28 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법, 및 기판 처리 장치 |
CA3205622A1 (en) | 2020-12-17 | 2022-06-23 | Ecoatm, Llc | Systems and methods for vending and/or purchasing mobile phones and other electronic devices |
JP2023045047A (ja) * | 2021-09-21 | 2023-04-03 | 株式会社Screenホールディングス | 基板処理装置 |
JP2024089558A (ja) * | 2022-12-21 | 2024-07-03 | 株式会社Screenホールディングス | 半導体装置の製造方法及び半導体製造装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014157936A (ja) | 2013-02-15 | 2014-08-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2016184649A (ja) | 2015-03-26 | 2016-10-20 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP2017118092A (ja) | 2015-08-27 | 2017-06-29 | 株式会社東芝 | 基板処理装置、基板処理方法およびエッチング液 |
US20170287726A1 (en) | 2016-03-30 | 2017-10-05 | Tokyo Electron Limited | Process and Apparatus for Processing a Nitride Structure Without Silica Deposition |
JP2018133551A (ja) | 2017-02-15 | 2018-08-23 | 東芝メモリ株式会社 | 基板処理装置および半導体装置の製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217182A (en) * | 1978-06-07 | 1980-08-12 | Litton Systems, Inc. | Semi-additive process of manufacturing a printed circuit |
JP3209443B2 (ja) * | 1992-03-23 | 2001-09-17 | ローム株式会社 | バイポーラトランジスタの製造方法 |
JP2000058615A (ja) * | 1998-07-31 | 2000-02-25 | Promos Technol Inc | 複数のウエハーの同時処理方法 |
JP2004214243A (ja) * | 2002-12-27 | 2004-07-29 | Toshiba Corp | 半導体ウェーハのエッチング方法及びエッチング装置 |
KR100602115B1 (ko) * | 2004-06-08 | 2006-07-19 | 동부일렉트로닉스 주식회사 | 습식 세정장치 및 세정방법 |
JP2006216815A (ja) * | 2005-02-04 | 2006-08-17 | Yamaha Corp | フィールド酸化膜形成法 |
JP2007220739A (ja) * | 2006-02-14 | 2007-08-30 | Sony Corp | 半導体装置及びその製造方法並びに酸窒化シリコン膜の形成方法 |
JP2007258405A (ja) * | 2006-03-23 | 2007-10-04 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP5466479B2 (ja) * | 2009-10-27 | 2014-04-09 | スタンレー電気株式会社 | 半導体素子の製造方法 |
WO2012043830A1 (ja) * | 2010-10-01 | 2012-04-05 | 和光純薬工業株式会社 | エッチング剤及びエッチング方法 |
JP6236320B2 (ja) * | 2010-12-10 | 2017-11-22 | ティーイーエル エフエスアイ,インコーポレイティド | 基板から窒化物を選択的に除去する方法 |
JP5890198B2 (ja) * | 2011-03-25 | 2016-03-22 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
US9460934B2 (en) * | 2013-03-15 | 2016-10-04 | Globalfoundries Inc. | Wet strip process for an antireflective coating layer |
JP2015070080A (ja) * | 2013-09-27 | 2015-04-13 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置および記憶媒体 |
JP6221155B2 (ja) * | 2013-12-11 | 2017-11-01 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
CN103887151B (zh) * | 2014-03-07 | 2017-02-01 | 京东方科技集团股份有限公司 | 一种构图装置和构图方法 |
JP6239417B2 (ja) * | 2014-03-24 | 2017-11-29 | 株式会社荏原製作所 | 基板処理装置 |
JP6370233B2 (ja) | 2015-01-30 | 2018-08-08 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP6434367B2 (ja) * | 2015-05-14 | 2018-12-05 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
US10541250B2 (en) * | 2015-12-29 | 2020-01-21 | Toshiba Memory Corporation | Method for manufacturing semiconductor device |
JP6824962B2 (ja) * | 2016-03-31 | 2021-02-03 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP6820736B2 (ja) * | 2016-12-27 | 2021-01-27 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
US20180233383A1 (en) * | 2017-02-15 | 2018-08-16 | Toshiba Memory Corporation | Substrate treatment apparatus and manufacturing method of semiconductor device |
US20180269226A1 (en) * | 2017-03-16 | 2018-09-20 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing same |
JP6796559B2 (ja) * | 2017-07-06 | 2020-12-09 | 東京エレクトロン株式会社 | エッチング方法および残渣除去方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014157936A (ja) | 2013-02-15 | 2014-08-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2016184649A (ja) | 2015-03-26 | 2016-10-20 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP2017118092A (ja) | 2015-08-27 | 2017-06-29 | 株式会社東芝 | 基板処理装置、基板処理方法およびエッチング液 |
US20170287726A1 (en) | 2016-03-30 | 2017-10-05 | Tokyo Electron Limited | Process and Apparatus for Processing a Nitride Structure Without Silica Deposition |
JP2018133551A (ja) | 2017-02-15 | 2018-08-23 | 東芝メモリ株式会社 | 基板処理装置および半導体装置の製造方法 |
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CN111524808A (zh) | 2020-08-11 |
TW202044383A (zh) | 2020-12-01 |
JP2020126934A (ja) | 2020-08-20 |
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TWI839449B (zh) | 2024-04-21 |
US20210335621A1 (en) | 2021-10-28 |
US11087992B2 (en) | 2021-08-10 |
US20200251343A1 (en) | 2020-08-06 |
KR20200096739A (ko) | 2020-08-13 |
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