JP2009016515A - 半導体装置の製造方法及び半導体装置の製造装置 - Google Patents
半導体装置の製造方法及び半導体装置の製造装置 Download PDFInfo
- Publication number
- JP2009016515A JP2009016515A JP2007175888A JP2007175888A JP2009016515A JP 2009016515 A JP2009016515 A JP 2009016515A JP 2007175888 A JP2007175888 A JP 2007175888A JP 2007175888 A JP2007175888 A JP 2007175888A JP 2009016515 A JP2009016515 A JP 2009016515A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- semiconductor
- insulating film
- back surface
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 193
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title abstract description 30
- 235000012431 wafers Nutrition 0.000 claims abstract description 168
- 239000000126 substance Substances 0.000 claims abstract description 86
- 238000012545 processing Methods 0.000 claims description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 37
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 32
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 150000007513 acids Chemical class 0.000 claims 2
- 239000002245 particle Substances 0.000 abstract description 51
- 239000010408 film Substances 0.000 description 100
- 239000000243 solution Substances 0.000 description 43
- 238000007689 inspection Methods 0.000 description 25
- 238000012993 chemical processing Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 238000012546 transfer Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 11
- 238000003672 processing method Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 238000001035 drying Methods 0.000 description 6
- 239000008155 medical solution Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000032258 transport Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000008119 colloidal silica Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010129 solution processing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】本発明は、半導体ウエハの半導体素子を形成すべき面である表面及び該表面の反対の面である裏面に絶縁膜を形成する工程S22と、半導体ウエハの前記裏面に選択的に第1薬液を供給することにより、前記裏面に形成された前記絶縁膜を除去する工程S26と、第2薬液に複数の半導体ウエハを同時に浸漬させることにより、表面に形成された絶縁膜を除去する工程S30と、を有する半導体装置の製造方法及び半導体装置の製造装置である。
【選択図】図6
Description
12a、12b 酸化シリコン膜
20a トンネル酸化膜
20b 酸化膜
40 表面
42 裏面
50 半導体ウエハ
52 薬液槽
62 薬液
Claims (11)
- 半導体ウエハの半導体素子を形成すべき面である表面及び該表面の反対の面である裏面に絶縁膜を形成する工程と、
前記半導体ウエハの前記裏面に選択的に第1薬液を供給することにより、前記裏面に形成された前記絶縁膜を除去する工程と、
第2薬液に複数の前記半導体ウエハを同時に浸漬させることにより、前記表面に形成された前記絶縁膜を除去する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記絶縁膜は、酸化シリコン及び窒化シリコンの少なくとも一方を含むことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記絶縁膜は酸化シリコン膜であることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第1薬液及び前記第2薬液は、酸であることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記第1薬液及び前記第2薬液は弗酸を含むことを特徴とする請求項3記載の半導体装置の製造方法。
- 前記裏面に形成された前記絶縁膜を除去する工程の前に、前記半導体ウエハの前記表面にイオン注入する工程を有することを特徴とする請求項1から5のいずれか一項記載の半導体装置の製造方法。
- 前記裏面に形成された前記絶縁膜を除去する工程の前に、前記裏面が半導体製造装置のチャックに接触する工程を有することを特徴とする請求項1から5のいずれか一項記載の半導体装置の製造方法。
- 前記絶縁膜を形成する工程は、トンネル酸化膜を形成する工程であることを特徴とする請求項1から5のいずれか一項記載の半導体装置の製造方法。
- 半導体ウエハの半導体素子を形成すべき面である表面の反対の面である裏面に選択的に第1薬液を供給することにより、前記裏面に形成された第1絶縁膜を除去する第1処理部と、
第2薬液に複数の前記半導体ウエハを浸漬させることにより、前記表面に形成された前記第2絶縁膜を除去する第2処理部と、
複数の前記半導体ウエハを1枚ずつ前記第1処理部で処理させ、その後前記複数の半導体ウエハを同時に前記第2処理部で処理させる制御部と、を具備する半導体装置の製造装置。 - 前記第1薬液及び前記第2薬液は、酸であることを特徴とする請求項9記載の半導体装置の製造装置。
- 前記第1薬液及び前記第2薬液は弗酸を含むことを特徴とする請求項9記載の半導体装置の製造装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007175888A JP5037241B2 (ja) | 2007-07-04 | 2007-07-04 | 半導体装置の製造方法及び半導体装置の製造装置 |
US12/166,290 US9263249B2 (en) | 2007-07-04 | 2008-07-01 | Method and apparatus for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007175888A JP5037241B2 (ja) | 2007-07-04 | 2007-07-04 | 半導体装置の製造方法及び半導体装置の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009016515A true JP2009016515A (ja) | 2009-01-22 |
JP5037241B2 JP5037241B2 (ja) | 2012-09-26 |
Family
ID=40221797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007175888A Expired - Fee Related JP5037241B2 (ja) | 2007-07-04 | 2007-07-04 | 半導体装置の製造方法及び半導体装置の製造装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9263249B2 (ja) |
JP (1) | JP5037241B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018033880A2 (en) | 2016-08-17 | 2018-02-22 | Shape Corp. | Battery support and protection structure for a vehicle |
CN110383526A (zh) | 2017-01-04 | 2019-10-25 | 形状集团 | 节点模块化的车辆电池托盘结构 |
US10886513B2 (en) | 2017-05-16 | 2021-01-05 | Shape Corp. | Vehicle battery tray having tub-based integration |
US10483510B2 (en) | 2017-05-16 | 2019-11-19 | Shape Corp. | Polarized battery tray for a vehicle |
WO2018213383A1 (en) | 2017-05-16 | 2018-11-22 | Shape Corp. | Vehicle battery tray with integrated battery retention and support features |
US11088412B2 (en) | 2017-09-13 | 2021-08-10 | Shape Corp. | Vehicle battery tray with tubular peripheral wall |
DE112018005556T5 (de) | 2017-10-04 | 2020-06-25 | Shape Corp. | Batterieträger-bodenbaugruppe für elektrofahrzeuge |
CN112055898A (zh) | 2018-03-01 | 2020-12-08 | 形状集团 | 与车辆电池托盘集成的冷却系统 |
US11688910B2 (en) | 2018-03-15 | 2023-06-27 | Shape Corp. | Vehicle battery tray having tub-based component |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0927469A (ja) * | 1995-07-13 | 1997-01-28 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH10189534A (ja) * | 1996-10-24 | 1998-07-21 | Canon Inc | 電子装置の製造方法 |
JPH11340188A (ja) * | 1998-05-25 | 1999-12-10 | Asahi Sunac Corp | レジスト剥離方法及び装置 |
JP2002014027A (ja) * | 2000-06-30 | 2002-01-18 | Jeol Ltd | 引出電極の作製方法 |
JP2004071836A (ja) * | 2002-08-06 | 2004-03-04 | Sumitomo Mitsubishi Silicon Corp | 半導体基板の製造方法 |
JP2004356593A (ja) * | 2003-05-30 | 2004-12-16 | Applied Materials Inc | 半導体ウェハの洗浄方法及び装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5296385A (en) * | 1991-12-31 | 1994-03-22 | Texas Instruments Incorporated | Conditioning of semiconductor wafers for uniform and repeatable rapid thermal processing |
WO1995004372A1 (en) * | 1993-07-30 | 1995-02-09 | Semitool, Inc. | Methods for processing semiconductors to reduce surface particles |
KR100282160B1 (ko) * | 1996-05-07 | 2001-03-02 | 가야시마 고조 | 기판처리장치 및 처리방법 |
US6002202A (en) * | 1996-07-19 | 1999-12-14 | The Regents Of The University Of California | Rigid thin windows for vacuum applications |
JP2001176833A (ja) * | 1999-12-14 | 2001-06-29 | Tokyo Electron Ltd | 基板処理装置 |
US6875284B2 (en) * | 2002-01-23 | 2005-04-05 | Semitool, Inc. | Side-specific cleaning method and apparatus |
US7122484B2 (en) * | 2004-04-28 | 2006-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for removing organic materials during formation of a metal interconnect |
KR100604051B1 (ko) * | 2004-06-30 | 2006-07-24 | 동부일렉트로닉스 주식회사 | 게이트 산화막의 전세정방법 |
US7448395B2 (en) * | 2004-07-19 | 2008-11-11 | Texas Instruments Incorporated | Process method to facilitate silicidation |
US7432177B2 (en) * | 2005-06-15 | 2008-10-07 | Applied Materials, Inc. | Post-ion implant cleaning for silicon on insulator substrate preparation |
-
2007
- 2007-07-04 JP JP2007175888A patent/JP5037241B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-01 US US12/166,290 patent/US9263249B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0927469A (ja) * | 1995-07-13 | 1997-01-28 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH10189534A (ja) * | 1996-10-24 | 1998-07-21 | Canon Inc | 電子装置の製造方法 |
JPH11340188A (ja) * | 1998-05-25 | 1999-12-10 | Asahi Sunac Corp | レジスト剥離方法及び装置 |
JP2002014027A (ja) * | 2000-06-30 | 2002-01-18 | Jeol Ltd | 引出電極の作製方法 |
JP2004071836A (ja) * | 2002-08-06 | 2004-03-04 | Sumitomo Mitsubishi Silicon Corp | 半導体基板の製造方法 |
JP2004356593A (ja) * | 2003-05-30 | 2004-12-16 | Applied Materials Inc | 半導体ウェハの洗浄方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5037241B2 (ja) | 2012-09-26 |
US9263249B2 (en) | 2016-02-16 |
US20090011600A1 (en) | 2009-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5037241B2 (ja) | 半導体装置の製造方法及び半導体装置の製造装置 | |
KR100706798B1 (ko) | 실리콘막과 실리콘 게르마늄막이 노출된 기판의 세정 방법및 이를 이용하는 반도체 제조 방법 | |
JP2007165935A (ja) | スクラバ中の金属を除去する方法 | |
TWI538035B (zh) | 基板處理系統以及使用該系統的基板處理方法 | |
JPH1116866A (ja) | シリコンの洗浄方法および洗浄装置 | |
JP4895256B2 (ja) | 基板の表面処理方法 | |
JP5622512B2 (ja) | 半導体装置の製造方法 | |
US5803980A (en) | De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue | |
US20080053486A1 (en) | Semiconductor substrate cleaning apparatus | |
JP4612424B2 (ja) | 基板処理方法および半導体装置の製造方法 | |
TWI776077B (zh) | 基板處理方法及基板處理裝置 | |
US20090250431A1 (en) | Substrate processing apparatus and substrate processing method | |
US20130095665A1 (en) | Systems and methods for processing substrates | |
EP0767487A1 (en) | Improvements in or relating to semiconductor device fabrication | |
US11205575B2 (en) | Method for stripping one or more layers from a semiconductor wafer | |
JPH11265867A (ja) | 基板処理方法および基板処理装置 | |
US6589356B1 (en) | Method for cleaning a silicon-based substrate without NH4OH vapor damage | |
JP2013084723A (ja) | 基板の洗浄方法及び、基板の洗浄装置 | |
JP2003332264A (ja) | 半導体装置の製造方法およびそれに用いられる成膜装置 | |
KR100752202B1 (ko) | 금속막 식각 공정 후의 반도체 웨이퍼 세정 방법 | |
JP2005340734A (ja) | 半導体素子の製造方法及び半導体素子 | |
JP2005260032A (ja) | 半導体装置の製造方法 | |
KR100800942B1 (ko) | 반도체 소자의 제조 방법 | |
KR20080058097A (ko) | 줄무늬 디펙트를 제거하기 위한 웨이퍼 세정방법 | |
KR20050011461A (ko) | 스토리지노드 플러그 형성 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100327 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100413 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100702 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20100702 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120321 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120327 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120508 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120605 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120704 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150713 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150713 Year of fee payment: 3 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |