CN109072077B - 胶体二氧化硅生长抑制剂以及相关的方法和系统 - Google Patents

胶体二氧化硅生长抑制剂以及相关的方法和系统 Download PDF

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Publication number
CN109072077B
CN109072077B CN201780026802.1A CN201780026802A CN109072077B CN 109072077 B CN109072077 B CN 109072077B CN 201780026802 A CN201780026802 A CN 201780026802A CN 109072077 B CN109072077 B CN 109072077B
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colloidal silica
concentration
phosphoric acid
growth inhibitor
acid
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CN109072077A (zh
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安东尼奥·L·P·罗通达龙
华莱士·P·普林茨
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
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    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
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    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
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    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CN201780026802.1A 2016-03-30 2017-03-24 胶体二氧化硅生长抑制剂以及相关的方法和系统 Active CN109072077B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201662315559P 2016-03-30 2016-03-30
US201662315632P 2016-03-30 2016-03-30
US62/315,559 2016-03-30
US62/315,632 2016-03-30
US15/467,973 US10515820B2 (en) 2016-03-30 2017-03-23 Process and apparatus for processing a nitride structure without silica deposition
US15/467,939 2017-03-23
US15/467,973 2017-03-23
US15/467,939 US10325779B2 (en) 2016-03-30 2017-03-23 Colloidal silica growth inhibitor and associated method and system
PCT/US2017/024123 WO2017172532A1 (en) 2016-03-30 2017-03-24 Colloidal silica growth inhibitor and associated method and system

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CN109072077B true CN109072077B (zh) 2021-04-27

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CN201780022040.8A Active CN108885989B (zh) 2016-03-30 2017-03-24 用于处理氮化物结构而没有二氧化硅沉积的方法和装置

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US (2) US10325779B2 (enExample)
JP (3) JP6942318B2 (enExample)
KR (3) KR102172305B1 (enExample)
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SG (2) SG11201808546YA (enExample)
TW (3) TWI655274B (enExample)
WO (2) WO2017172533A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10325779B2 (en) * 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
JP6909620B2 (ja) * 2017-04-20 2021-07-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
KR102711638B1 (ko) * 2018-07-20 2024-09-27 도쿄엘렉트론가부시키가이샤 3d nand 구조물에서의 질화규소 에칭 및 실리카 증착 제어
CN109216367B (zh) * 2018-08-27 2021-07-02 长江存储科技有限责任公司 半导体结构的形成方法
KR102084044B1 (ko) * 2018-12-24 2020-03-03 주식회사 세미부스터 인산용액 중의 실리콘 농도 분석방법
KR102759372B1 (ko) * 2019-01-08 2025-01-24 삼성전자주식회사 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법
JP7209556B2 (ja) * 2019-02-05 2023-01-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2020172454A1 (en) * 2019-02-20 2020-08-27 Weimin Li Need for si3n4 selective removal by wet chemistry
JP2020150126A (ja) * 2019-03-13 2020-09-17 東京エレクトロン株式会社 混合装置、混合方法および基板処理システム
JP6843173B2 (ja) * 2019-03-29 2021-03-17 東京エレクトロン株式会社 基板処理装置、および基板処理方法
KR20210007097A (ko) * 2019-07-10 2021-01-20 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP7336956B2 (ja) * 2019-10-10 2023-09-01 東京エレクトロン株式会社 基板処理システム、及び基板処理方法
KR102583556B1 (ko) * 2021-01-07 2023-10-10 세메스 주식회사 처리액 공급 장치 및 처리액 공급 장치의 고형 제거 방법
KR102315919B1 (ko) * 2021-01-26 2021-10-22 연세대학교 산학협력단 비인산계 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
JP7634387B2 (ja) * 2021-03-02 2025-02-21 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR20240006642A (ko) * 2021-05-12 2024-01-15 엔테그리스, 아이엔씨. 선택적 에칭제 조성물 및 방법
KR102449897B1 (ko) * 2022-01-14 2022-09-30 삼성전자주식회사 습식 식각 방법 및 이를 이용한 반도체 소자 제조 방법.
CN117954340B (zh) * 2024-01-10 2024-08-02 苏州恩腾半导体科技有限公司 一种选择性蚀刻方法及装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
US7635397B2 (en) * 2007-06-05 2009-12-22 Kabushiki Kaisha Toshiba Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06349808A (ja) 1993-06-14 1994-12-22 Hitachi Ltd 窒化シリコン膜除去液およびそれを用いた半導体製造装置
JP3243975B2 (ja) * 1994-08-17 2002-01-07 住友金属工業株式会社 半導体装置の製造方法
JPH09129588A (ja) * 1995-10-31 1997-05-16 Fujitsu Ltd エッチング液の濃度管理方法及びエッチング装置
JPH09275091A (ja) * 1996-04-03 1997-10-21 Mitsubishi Electric Corp 半導体窒化膜エッチング装置
KR100248113B1 (ko) * 1997-01-21 2000-03-15 이기원 전자 표시 장치 및 기판용 세정 및 식각 조성물
US5885903A (en) 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
SG79292A1 (en) * 1998-12-11 2001-03-20 Hitachi Ltd Semiconductor integrated circuit and its manufacturing method
US6399517B2 (en) * 1999-03-30 2002-06-04 Tokyo Electron Limited Etching method and etching apparatus
EP1198534B1 (en) * 1999-07-13 2004-10-13 Kao Corporation Polishing liquid composition
US6391213B1 (en) * 1999-09-07 2002-05-21 Komag, Inc. Texturing of a landing zone on glass-based substrates by a chemical etching process
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2004006810A (ja) * 2002-04-16 2004-01-08 Tosoh Corp 銅系金属研磨液用酸、それを用いた銅系金属用研磨液及び研磨方法
WO2003094216A1 (en) * 2002-04-30 2003-11-13 Hitachi Chemical Co., Ltd. Polishing fluid and polishing method
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
TWI283442B (en) * 2004-09-09 2007-07-01 Sez Ag Method for selective etching
KR100607797B1 (ko) * 2004-09-14 2006-08-02 동부일렉트로닉스 주식회사 실리콘 질화막 스트립 제어 장치 및 방법
CN101248516A (zh) * 2005-04-08 2008-08-20 塞克姆公司 金属氮化物的选择性湿蚀刻
JP2006319171A (ja) * 2005-05-13 2006-11-24 Tosoh Corp エッチング用組成物
US7628932B2 (en) * 2006-06-02 2009-12-08 Micron Technology, Inc. Wet etch suitable for creating square cuts in si
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
SG177201A1 (en) * 2006-12-21 2012-01-30 Advanced Tech Materials Compositions and methods for the selective removal of silicon nitride
JP2008172160A (ja) * 2007-01-15 2008-07-24 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
ITMI20071002A1 (it) * 2007-05-17 2008-11-18 Petracem Srl Manufatto per edilizia.
JP5199339B2 (ja) * 2007-05-18 2013-05-15 ティーイーエル エフエスアイ，インコーポレイティド 水蒸気または蒸気を用いた基板の処理方法
US8211810B2 (en) 2007-09-21 2012-07-03 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution
JP5009207B2 (ja) * 2007-09-21 2012-08-22 大日本スクリーン製造株式会社 基板処理装置
US8298435B2 (en) * 2007-10-19 2012-10-30 International Business Machines Corporation Selective etching bath methods
JP4966223B2 (ja) * 2008-02-29 2012-07-04 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
WO2010005889A1 (en) 2008-07-07 2010-01-14 Lubrizol Advanced Materials, Inc. Preventing silica and silicate scale with inhibitors in industrial water systems
KR101316054B1 (ko) 2008-08-08 2013-10-10 삼성전자주식회사 실리콘 산화막 식각용 조성물 및 이를 이용한 실리콘 산화막의 식각 방법
US8685272B2 (en) 2008-08-08 2014-04-01 Samsung Electronics Co., Ltd. Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
US8881811B2 (en) 2008-10-10 2014-11-11 Halliburton Energy Services, Inc. Additives to suppress silica scale build-up and methods of use thereof
TWI486428B (zh) * 2008-10-20 2015-06-01 Nitta Haas Inc A silicon nitride polishing composition, and a control method using the same
US20100294984A1 (en) 2009-05-22 2010-11-25 General Electric Company Methods of inhibiting scale of silica
CN102471688A (zh) * 2009-08-13 2012-05-23 东友Fine-Chem股份有限公司 用于形成铜互连的蚀刻组合物
SG182790A1 (en) * 2010-02-01 2012-09-27 Jsr Corp Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method using same
WO2011136913A1 (en) * 2010-04-27 2011-11-03 Fsi International, Inc. Wet processing of microelectronic substrates with controlled mixing of fluids proximal to substrate surfaces
JP2012033561A (ja) 2010-07-28 2012-02-16 Sanyo Chem Ind Ltd 窒化ケイ素用エッチング液
KR101660262B1 (ko) 2010-09-07 2016-09-27 삼성전자주식회사 수직형 반도체 소자의 제조 방법
JP2012074601A (ja) * 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
CN102443395B (zh) * 2010-09-30 2016-01-20 韩国泰科诺赛美材料株式会社 用于湿法蚀刻二氧化硅的组合物
US8727002B2 (en) 2010-12-14 2014-05-20 Halliburton Energy Services, Inc. Acidic treatment fluids containing non-polymeric silica scale control additives and methods related thereto
US9221700B2 (en) 2010-12-22 2015-12-29 Ecolab Usa Inc. Method for inhibiting the formation and deposition of silica scale in aqueous systems
US9257292B2 (en) 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing
TW201243030A (en) 2011-04-20 2012-11-01 Applied Materials Inc Selective silicon nitride etch
US8623766B2 (en) * 2011-09-20 2014-01-07 Cabot Microelectronics Corporation Composition and method for polishing aluminum semiconductor substrates
KR101782329B1 (ko) * 2011-10-18 2017-09-28 삼성전자주식회사 식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법
US8877075B2 (en) * 2012-02-01 2014-11-04 Infineon Technologies Ag Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
KR101194245B1 (ko) * 2012-02-29 2012-10-29 와이엠티 주식회사 화학강화 유리의 제조방법
TWI634083B (zh) 2012-03-30 2018-09-01 羅門哈斯公司 矽石垢之協同性控制
US9076879B2 (en) * 2012-09-11 2015-07-07 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device and method for fabricating the same
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9058976B2 (en) 2012-11-06 2015-06-16 International Business Machines Corporation Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof
JP2014099480A (ja) 2012-11-13 2014-05-29 Fujifilm Corp 半導体基板のエッチング方法及び半導体素子の製造方法
US8946023B2 (en) 2013-03-12 2015-02-03 Sandisk Technologies Inc. Method of making a vertical NAND device using sequential etching of multilayer stacks
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
JP6206336B2 (ja) 2013-06-17 2017-10-04 王子ホールディングス株式会社 半導体発光素子用基板、半導体発光素子、半導体発光素子用基板の製造方法、および、半導体発光素子の製造方法
JP6502633B2 (ja) * 2013-09-30 2019-04-17 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
JP6221155B2 (ja) * 2013-12-11 2017-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
TWI543251B (zh) 2014-04-28 2016-07-21 台灣積體電路製造股份有限公司 具矽濃度控制的蝕刻製程方法及其系統
US9305932B2 (en) 2014-06-30 2016-04-05 Sandisk Technologies Inc. Methods of making three dimensional NAND devices
US9868902B2 (en) * 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
JP6580397B2 (ja) * 2014-07-17 2019-09-25 ソウルブレイン シーオー．， エルティーディー． エッチング用組成物及びこれを用いた半導体素子の製造方法
KR20160010267A (ko) * 2014-07-17 2016-01-27 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
CN105368452B (zh) * 2014-08-12 2019-02-19 易安爱富科技有限公司 氧化硅层蚀刻液
KR20160050536A (ko) * 2014-10-30 2016-05-11 램테크놀러지 주식회사 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법
US9659788B2 (en) 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
US10325779B2 (en) * 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
US7635397B2 (en) * 2007-06-05 2009-12-22 Kabushiki Kaisha Toshiba Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device

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