JP2021040151A5 - - Google Patents
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- Publication number
- JP2021040151A5 JP2021040151A5 JP2020191395A JP2020191395A JP2021040151A5 JP 2021040151 A5 JP2021040151 A5 JP 2021040151A5 JP 2020191395 A JP2020191395 A JP 2020191395A JP 2020191395 A JP2020191395 A JP 2020191395A JP 2021040151 A5 JP2021040151 A5 JP 2021040151A5
- Authority
- JP
- Japan
- Prior art keywords
- ion
- treatment liquid
- solvent
- hypochlorite ion
- hypochlorite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 claims 16
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims 13
- 239000002904 solvent Substances 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000004140 cleaning Methods 0.000 claims 5
- 235000012431 wafers Nutrition 0.000 claims 5
- -1 alkylammonium ion Chemical class 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims 2
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 2
- 239000003456 ion exchange resin Substances 0.000 claims 2
- 229920003303 ion-exchange polymer Polymers 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910000510 noble metal Inorganic materials 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023111596A JP7590504B2 (ja) | 2018-01-16 | 2023-07-06 | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018005202 | 2018-01-16 | ||
| JP2018005201 | 2018-01-16 | ||
| JP2018005201 | 2018-01-16 | ||
| JP2018005202 | 2018-01-16 | ||
| JP2018199949 | 2018-10-24 | ||
| JP2018199949 | 2018-10-24 | ||
| JP2019566470A JP6798045B2 (ja) | 2018-01-16 | 2019-01-15 | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019566470A Division JP6798045B2 (ja) | 2018-01-16 | 2019-01-15 | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023111596A Division JP7590504B2 (ja) | 2018-01-16 | 2023-07-06 | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021040151A JP2021040151A (ja) | 2021-03-11 |
| JP2021040151A5 true JP2021040151A5 (enExample) | 2022-01-24 |
| JP7311477B2 JP7311477B2 (ja) | 2023-07-19 |
Family
ID=67301793
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019566470A Active JP6798045B2 (ja) | 2018-01-16 | 2019-01-15 | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
| JP2020191395A Active JP7311477B2 (ja) | 2018-01-16 | 2020-11-18 | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
| JP2023111596A Active JP7590504B2 (ja) | 2018-01-16 | 2023-07-06 | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019566470A Active JP6798045B2 (ja) | 2018-01-16 | 2019-01-15 | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023111596A Active JP7590504B2 (ja) | 2018-01-16 | 2023-07-06 | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US11390829B2 (enExample) |
| EP (1) | EP3726565A4 (enExample) |
| JP (3) | JP6798045B2 (enExample) |
| KR (2) | KR20250022896A (enExample) |
| CN (1) | CN111684570B (enExample) |
| SG (1) | SG11202006733TA (enExample) |
| TW (4) | TWI877955B (enExample) |
| WO (1) | WO2019142788A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019142788A1 (ja) * | 2018-01-16 | 2019-07-25 | 株式会社トクヤマ | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
| KR102764031B1 (ko) * | 2018-05-23 | 2025-02-07 | 가부시키가이샤 도쿠야마 | 차아염소산 제4급 알킬 암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 세정 방법 |
| JP7219061B2 (ja) | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | ルテニウム除去用組成物 |
| WO2021060234A1 (ja) | 2019-09-27 | 2021-04-01 | 株式会社トクヤマ | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
| KR102784165B1 (ko) | 2019-09-27 | 2025-03-19 | 가부시끼가이샤 도꾸야마 | 루테늄의 반도체용 처리액 및 그 제조 방법 |
| KR102769981B1 (ko) * | 2019-11-22 | 2025-02-18 | 가부시끼가이샤 도꾸야마 | 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법 |
| JP7496410B2 (ja) * | 2020-02-25 | 2024-06-06 | 株式会社トクヤマ | ルテニウムの半導体用処理液 |
| US20230126771A1 (en) | 2020-03-31 | 2023-04-27 | Tokuyama Corporation | Treatment liquid for semiconductors and method for producing same |
| KR20230048318A (ko) | 2020-08-07 | 2023-04-11 | 가부시끼가이샤 도꾸야마 | 반도체 웨이퍼용 처리액 |
| KR20230047416A (ko) * | 2020-09-03 | 2023-04-07 | 후지필름 가부시키가이샤 | 조성물, 기판의 처리 방법 |
| US12247298B2 (en) | 2020-11-26 | 2025-03-11 | Tokuyama Corporation | Semiconductor wafer treatment liquid and production method thereof |
| JP7342288B2 (ja) * | 2020-12-18 | 2023-09-11 | 株式会社トクヤマ | 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液 |
| KR20230104741A (ko) | 2020-12-18 | 2023-07-10 | 가부시끼가이샤 도꾸야마 | 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 |
| JP7638119B2 (ja) * | 2021-03-15 | 2025-03-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| US20220328320A1 (en) | 2021-03-31 | 2022-10-13 | Tokuyama Corporation | Semiconductor treatment liquid |
| TW202424172A (zh) | 2022-09-29 | 2024-06-16 | 日商德山股份有限公司 | 乾式蝕刻殘渣去除液 |
| WO2024075704A1 (ja) * | 2022-10-03 | 2024-04-11 | 株式会社トクヤマ | 半導体用処理液 |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
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| DE2517187C3 (de) | 1975-04-18 | 1980-11-13 | Aeg-Kanis Turbinenfabrik Gmbh, 8500 Nuernberg | Hydraulische Turbinendrehvorrichtung |
| JPS5523325U (enExample) | 1978-07-28 | 1980-02-15 | ||
| IT1203814B (it) * | 1986-06-30 | 1989-02-23 | Fidia Farmaceutici | Esteri dell'acido alginico |
| JP3649771B2 (ja) * | 1995-05-15 | 2005-05-18 | 栗田工業株式会社 | 洗浄方法 |
| JP3619745B2 (ja) * | 1999-12-20 | 2005-02-16 | 株式会社日立製作所 | 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法 |
| JP2001231373A (ja) | 2000-02-22 | 2001-08-28 | Gumma Prefecture | 植物の栽培方法及びその装置 |
| JP4510979B2 (ja) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
| JP3664967B2 (ja) | 2000-10-20 | 2005-06-29 | シャープ株式会社 | 半導体集積回路 |
| JP3585437B2 (ja) | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| JP2003119494A (ja) | 2001-10-05 | 2003-04-23 | Nec Corp | 洗浄組成物およびこれを用いた洗浄方法と洗浄装置 |
| TW200413522A (en) * | 2002-11-08 | 2004-08-01 | Sumitomo Chemical Co | Washing liquid for semiconductor substrate |
| JP2005101479A (ja) * | 2002-11-08 | 2005-04-14 | Sumitomo Chemical Co Ltd | 半導体基板用洗浄液 |
| JP4232002B2 (ja) * | 2003-01-16 | 2009-03-04 | 日本電気株式会社 | デバイス基板用の洗浄組成物及び該洗浄組成物を用いた洗浄方法並びに洗浄装置 |
| KR101056544B1 (ko) * | 2003-08-19 | 2011-08-11 | 아반토르 퍼포먼스 머티리얼스, 인크. | 마이크로전자 기판용 박리 및 세정 조성물 |
| WO2005083523A1 (en) * | 2004-02-11 | 2005-09-09 | Mallinckrodt Baker Inc. | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
| EP2128897B1 (en) | 2007-03-16 | 2015-05-06 | Fujitsu Limited | Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device |
| JP2009081247A (ja) | 2007-09-26 | 2009-04-16 | Panasonic Corp | ルテニウム膜のエッチング方法 |
| US20090130849A1 (en) | 2007-10-29 | 2009-05-21 | Wai Mun Lee | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
| US7976638B2 (en) * | 2007-11-13 | 2011-07-12 | Sachem, Inc. | High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean |
| JP2009231354A (ja) * | 2008-03-19 | 2009-10-08 | Fujifilm Corp | 半導体デバイス用洗浄液、および洗浄方法 |
| JP5086893B2 (ja) * | 2008-05-26 | 2012-11-28 | 花王株式会社 | 半導体デバイス用基板用の洗浄液 |
| WO2010029867A1 (ja) | 2008-09-09 | 2010-03-18 | 昭和電工株式会社 | チタン系金属、タングステン系金属、チタンタングステン系金属またはそれらの窒化物のエッチング液 |
| CN102652188A (zh) * | 2009-12-17 | 2012-08-29 | 昭和电工株式会社 | 钌类金属的蚀刻用组合物及其配制方法 |
| CN102234597B (zh) * | 2010-04-26 | 2015-05-27 | 东友精细化工有限公司 | 清洗组合物 |
| US8211800B2 (en) * | 2010-08-23 | 2012-07-03 | Kabushiki Kaisha Toshiba | Ru cap metal post cleaning method and cleaning chemical |
| JP2013001620A (ja) * | 2011-06-20 | 2013-01-07 | Evatech Corp | 弱酸性次亜塩素酸、並びにその製造装置および製造方法 |
| WO2013101907A1 (en) * | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| JP2014062297A (ja) | 2012-09-20 | 2014-04-10 | Toshiba Corp | 処理装置、処理液の製造方法、および電子デバイスの製造方法 |
| WO2014138064A1 (en) * | 2013-03-04 | 2014-09-12 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| JP6723152B2 (ja) * | 2013-06-06 | 2020-07-15 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物及び方法 |
| CN107155367B (zh) * | 2014-06-30 | 2021-12-21 | 恩特格里斯公司 | 利用钨及钴兼容性移除蚀刻后残余物的含水及半含水清洁剂 |
| WO2016042408A2 (en) * | 2014-09-17 | 2016-03-24 | Atmi Taiwan Co., Ltd. | Compositions for etching titanium nitride having compatability with silicon germanide and tungsten |
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| JP6555273B2 (ja) * | 2014-11-13 | 2019-08-07 | 三菱瓦斯化学株式会社 | タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 |
| WO2016140246A1 (ja) * | 2015-03-04 | 2016-09-09 | 日立化成株式会社 | Ｃｍｐ用研磨液、及び、これを用いた研磨方法 |
| TWI816635B (zh) * | 2015-10-15 | 2023-10-01 | 日商三菱瓦斯化學股份有限公司 | 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法 |
| JP6713044B2 (ja) | 2016-06-02 | 2020-06-24 | 富士フイルム株式会社 | 処理液、基板の洗浄方法及びレジストの除去方法 |
| CN110177903A (zh) * | 2017-01-17 | 2019-08-27 | 恩特格里斯公司 | 高阶节点工艺后端处理的蚀刻后残留物去除 |
| WO2019142788A1 (ja) * | 2018-01-16 | 2019-07-25 | 株式会社トクヤマ | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
| US11017995B2 (en) * | 2018-07-26 | 2021-05-25 | Versum Materials Us, Llc | Composition for TiN hard mask removal and etch residue cleaning |
| US11085011B2 (en) * | 2018-08-28 | 2021-08-10 | Entegris, Inc. | Post CMP cleaning compositions for ceria particles |
| WO2020049955A1 (ja) * | 2018-09-06 | 2020-03-12 | 富士フイルム株式会社 | 薬液、基板の処理方法 |
| WO2020054296A1 (ja) * | 2018-09-12 | 2020-03-19 | 富士フイルム株式会社 | 薬液、基板の処理方法 |
| US11898081B2 (en) * | 2019-11-21 | 2024-02-13 | Tokyo Ohka Kogyo Co., Ltd. | Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring |
| KR102769981B1 (ko) * | 2019-11-22 | 2025-02-18 | 가부시끼가이샤 도꾸야마 | 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법 |
-
2019
- 2019-01-15 WO PCT/JP2019/000938 patent/WO2019142788A1/ja not_active Ceased
- 2019-01-15 KR KR1020257003365A patent/KR20250022896A/ko active Pending
- 2019-01-15 EP EP19741609.2A patent/EP3726565A4/en active Pending
- 2019-01-15 KR KR1020207020591A patent/KR102766830B1/ko active Active
- 2019-01-15 CN CN201980008715.2A patent/CN111684570B/zh active Active
- 2019-01-15 SG SG11202006733TA patent/SG11202006733TA/en unknown
- 2019-01-15 JP JP2019566470A patent/JP6798045B2/ja active Active
- 2019-01-15 US US16/962,260 patent/US11390829B2/en active Active
- 2019-01-16 TW TW112149234A patent/TWI877955B/zh active
- 2019-01-16 TW TW110141481A patent/TWI843026B/zh active
- 2019-01-16 TW TW108101608A patent/TW201932588A/zh unknown
- 2019-01-16 TW TW114106215A patent/TWI899006B/zh active
-
2020
- 2020-11-18 JP JP2020191395A patent/JP7311477B2/ja active Active
-
2022
- 2022-06-23 US US17/847,299 patent/US20220325205A1/en active Pending
-
2023
- 2023-07-06 JP JP2023111596A patent/JP7590504B2/ja active Active
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