SG11202006733TA - Treatment liquid for semiconductor wafers, which contains hypochlorite ions - Google Patents

Treatment liquid for semiconductor wafers, which contains hypochlorite ions

Info

Publication number
SG11202006733TA
SG11202006733TA SG11202006733TA SG11202006733TA SG11202006733TA SG 11202006733T A SG11202006733T A SG 11202006733TA SG 11202006733T A SG11202006733T A SG 11202006733TA SG 11202006733T A SG11202006733T A SG 11202006733TA SG 11202006733T A SG11202006733T A SG 11202006733TA
Authority
SG
Singapore
Prior art keywords
treatment liquid
semiconductor wafers
hypochlorite ions
contains hypochlorite
ions
Prior art date
Application number
SG11202006733TA
Inventor
Takafumi Shimoda
Takayuki Negishi
Yuki KIKKAWA
Seiji Tono
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11202006733TA publication Critical patent/SG11202006733TA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/046Salts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/0008Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/08Liquid soap, e.g. for dispensers; capsuled
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/168Organometallic compounds or orgometallic complexes
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/10Salts
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02082Cleaning product to be cleaned
    • H01L21/02087Cleaning of wafer edges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02082Cleaning product to be cleaned
    • H01L21/0209Cleaning of wafer backside
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
SG11202006733TA 2018-01-16 2019-01-15 Treatment liquid for semiconductor wafers, which contains hypochlorite ions SG11202006733TA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018005201 2018-01-16
JP2018005202 2018-01-16
JP2018199949 2018-10-24
PCT/JP2019/000938 WO2019142788A1 (en) 2018-01-16 2019-01-15 Treatment liquid for semiconductor wafers, which contains hypochlorite ions

Publications (1)

Publication Number Publication Date
SG11202006733TA true SG11202006733TA (en) 2020-08-28

Family

ID=67301793

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202006733TA SG11202006733TA (en) 2018-01-16 2019-01-15 Treatment liquid for semiconductor wafers, which contains hypochlorite ions

Country Status (8)

Country Link
US (2) US11390829B2 (en)
EP (1) EP3726565A4 (en)
JP (3) JP6798045B2 (en)
KR (1) KR20200110335A (en)
CN (1) CN111684570B (en)
SG (1) SG11202006733TA (en)
TW (3) TW201932588A (en)
WO (1) WO2019142788A1 (en)

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JP6798045B2 (en) * 2018-01-16 2020-12-09 株式会社トクヤマ Processing liquid for semiconductor wafers containing hypochlorite ions
JP7219061B2 (en) * 2018-11-14 2023-02-07 関東化学株式会社 Composition for removing ruthenium
US11932590B2 (en) 2019-09-27 2024-03-19 Tokuyama Corporation Inhibitor for RuO4 gas generation and method for inhibiting RuO4 gas generation
KR102506715B1 (en) 2019-09-27 2023-03-06 가부시끼가이샤 도꾸야마 Treatment liquid for semiconductors of ruthenium and its manufacturing method
US20230207329A1 (en) * 2020-02-25 2023-06-29 Tokuyama Corporation Treatment liquid for semiconductor with ruthenium
TW202138620A (en) 2020-03-31 2021-10-16 日商德山股份有限公司 Treatment liquid for semiconductors and method for producing same
TW202208323A (en) 2020-08-07 2022-03-01 日商德山股份有限公司 Processing liquid for semiconductor wafers
KR20230047416A (en) * 2020-09-03 2023-04-07 후지필름 가부시키가이샤 Composition, substrate processing method
JPWO2022114036A1 (en) 2020-11-26 2022-06-02
WO2022131186A1 (en) * 2020-12-18 2022-06-23 株式会社トクヤマ Method for treating transition metal semiconductor, and reducing agent-containing treatment liquid for transition metal oxide
KR20230104741A (en) 2020-12-18 2023-07-10 가부시끼가이샤 도꾸야마 Method for treating transition metal semiconductor, and reducing agent-containing treatment liquid for transition metal oxide
KR20220136262A (en) 2021-03-31 2022-10-07 가부시끼가이샤 도꾸야마 Semiconductor treatment liquid
TW202424172A (en) * 2022-09-29 2024-06-16 日商德山股份有限公司 Dry etching residue removing solution

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Also Published As

Publication number Publication date
TWI843026B (en) 2024-05-21
CN111684570B (en) 2024-02-27
JP2021040151A (en) 2021-03-11
TW201932588A (en) 2019-08-16
US20220325205A1 (en) 2022-10-13
WO2019142788A1 (en) 2019-07-25
EP3726565A4 (en) 2021-10-13
TW202210663A (en) 2022-03-16
JPWO2019142788A1 (en) 2020-11-19
JP6798045B2 (en) 2020-12-09
US20210062115A1 (en) 2021-03-04
JP7311477B2 (en) 2023-07-19
CN111684570A (en) 2020-09-18
KR20200110335A (en) 2020-09-23
EP3726565A1 (en) 2020-10-21
TW202417601A (en) 2024-05-01
US11390829B2 (en) 2022-07-19
JP2023126320A (en) 2023-09-07

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