SG11202006733TA - Treatment liquid for semiconductor wafers, which contains hypochlorite ions - Google Patents
Treatment liquid for semiconductor wafers, which contains hypochlorite ionsInfo
- Publication number
- SG11202006733TA SG11202006733TA SG11202006733TA SG11202006733TA SG11202006733TA SG 11202006733T A SG11202006733T A SG 11202006733TA SG 11202006733T A SG11202006733T A SG 11202006733TA SG 11202006733T A SG11202006733T A SG 11202006733TA SG 11202006733T A SG11202006733T A SG 11202006733TA
- Authority
- SG
- Singapore
- Prior art keywords
- treatment liquid
- semiconductor wafers
- hypochlorite ions
- contains hypochlorite
- ions
- Prior art date
Links
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Inorganic materials Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 title 1
- -1 hypochlorite ions Chemical class 0.000 title 1
- 239000007788 liquid Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/08—Liquid soap, e.g. for dispensers; capsuled
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/168—Organometallic compounds or orgometallic complexes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018005201 | 2018-01-16 | ||
JP2018005202 | 2018-01-16 | ||
JP2018199949 | 2018-10-24 | ||
PCT/JP2019/000938 WO2019142788A1 (en) | 2018-01-16 | 2019-01-15 | Treatment liquid for semiconductor wafers, which contains hypochlorite ions |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202006733TA true SG11202006733TA (en) | 2020-08-28 |
Family
ID=67301793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202006733TA SG11202006733TA (en) | 2018-01-16 | 2019-01-15 | Treatment liquid for semiconductor wafers, which contains hypochlorite ions |
Country Status (8)
Country | Link |
---|---|
US (2) | US11390829B2 (en) |
EP (1) | EP3726565A4 (en) |
JP (3) | JP6798045B2 (en) |
KR (1) | KR20200110335A (en) |
CN (1) | CN111684570B (en) |
SG (1) | SG11202006733TA (en) |
TW (3) | TW201932588A (en) |
WO (1) | WO2019142788A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6798045B2 (en) * | 2018-01-16 | 2020-12-09 | 株式会社トクヤマ | Processing liquid for semiconductor wafers containing hypochlorite ions |
JP7219061B2 (en) * | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | Composition for removing ruthenium |
US11932590B2 (en) | 2019-09-27 | 2024-03-19 | Tokuyama Corporation | Inhibitor for RuO4 gas generation and method for inhibiting RuO4 gas generation |
KR102506715B1 (en) | 2019-09-27 | 2023-03-06 | 가부시끼가이샤 도꾸야마 | Treatment liquid for semiconductors of ruthenium and its manufacturing method |
US20230207329A1 (en) * | 2020-02-25 | 2023-06-29 | Tokuyama Corporation | Treatment liquid for semiconductor with ruthenium |
TW202138620A (en) | 2020-03-31 | 2021-10-16 | 日商德山股份有限公司 | Treatment liquid for semiconductors and method for producing same |
TW202208323A (en) | 2020-08-07 | 2022-03-01 | 日商德山股份有限公司 | Processing liquid for semiconductor wafers |
KR20230047416A (en) * | 2020-09-03 | 2023-04-07 | 후지필름 가부시키가이샤 | Composition, substrate processing method |
JPWO2022114036A1 (en) | 2020-11-26 | 2022-06-02 | ||
WO2022131186A1 (en) * | 2020-12-18 | 2022-06-23 | 株式会社トクヤマ | Method for treating transition metal semiconductor, and reducing agent-containing treatment liquid for transition metal oxide |
KR20230104741A (en) | 2020-12-18 | 2023-07-10 | 가부시끼가이샤 도꾸야마 | Method for treating transition metal semiconductor, and reducing agent-containing treatment liquid for transition metal oxide |
KR20220136262A (en) | 2021-03-31 | 2022-10-07 | 가부시끼가이샤 도꾸야마 | Semiconductor treatment liquid |
TW202424172A (en) * | 2022-09-29 | 2024-06-16 | 日商德山股份有限公司 | Dry etching residue removing solution |
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DE2517187C3 (en) | 1975-04-18 | 1980-11-13 | Aeg-Kanis Turbinenfabrik Gmbh, 8500 Nuernberg | Hydraulic turbine rotating device |
JP3649771B2 (en) * | 1995-05-15 | 2005-05-18 | 栗田工業株式会社 | Cleaning method |
JP3619745B2 (en) * | 1999-12-20 | 2005-02-16 | 株式会社日立製作所 | Solid surface treatment method and treatment liquid, and electronic device manufacturing method using the same |
JP2001231373A (en) | 2000-02-22 | 2001-08-28 | Gumma Prefecture | Plant-cultivating method and apparatus therefor |
JP4510979B2 (en) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | Method for using ruthenium or ruthenium oxide removing liquid and method for removing ruthenium or ruthenium oxide |
JP3664967B2 (en) | 2000-10-20 | 2005-06-29 | シャープ株式会社 | Semiconductor integrated circuit |
JP3585437B2 (en) | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | Ruthenium film etching method |
JP2003119494A (en) * | 2001-10-05 | 2003-04-23 | Nec Corp | Washing composition, and washing method and washing device using the same |
JP2005101479A (en) * | 2002-11-08 | 2005-04-14 | Sumitomo Chemical Co Ltd | Cleaning liquid for semiconductor substrate |
TW200413522A (en) * | 2002-11-08 | 2004-08-01 | Sumitomo Chemical Co | Washing liquid for semiconductor substrate |
JP4232002B2 (en) * | 2003-01-16 | 2009-03-04 | 日本電気株式会社 | Cleaning composition for device substrate, cleaning method and cleaning apparatus using the cleaning composition |
CN1839355B (en) * | 2003-08-19 | 2012-07-11 | 安万托特性材料股份有限公司 | Stripping and cleaning compositions for microelectronics |
CN101833251B (en) * | 2004-02-11 | 2013-11-13 | 安万托特性材料股份有限公司 | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
JP2009081247A (en) | 2007-09-26 | 2009-04-16 | Panasonic Corp | Method of etching ruthenium film |
TW200946621A (en) * | 2007-10-29 | 2009-11-16 | Ekc Technology Inc | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
ES2386692T3 (en) * | 2007-11-13 | 2012-08-27 | Sachem, Inc. | Composition of polyhedral silsesquioxane with high negative zeta potential and method for wet cleaning of semiconductors without damage |
JP2009231354A (en) * | 2008-03-19 | 2009-10-08 | Fujifilm Corp | Cleaning liquid for semiconductor device and cleaning method |
US20110147341A1 (en) | 2008-09-09 | 2011-06-23 | Showa Denko K.K. | Etching solution for titanium-based metal, tungsten-based metal, titanium/tungsten-based metal or their nitrides |
KR20120082443A (en) * | 2009-12-17 | 2012-07-23 | 쇼와 덴코 가부시키가이샤 | Composition for etching ruthenium-based metal and method for preparing same |
US8211800B2 (en) * | 2010-08-23 | 2012-07-03 | Kabushiki Kaisha Toshiba | Ru cap metal post cleaning method and cleaning chemical |
JP2013001620A (en) * | 2011-06-20 | 2013-01-07 | Evatech Corp | Weakly acidic hypochlorous acid and apparatus and method for preparing the same |
JP2014062297A (en) | 2012-09-20 | 2014-04-10 | Toshiba Corp | Processing apparatus, method for producing processing liquid, and method for producing electronic device |
EP3004287B1 (en) * | 2013-06-06 | 2021-08-18 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
WO2016042408A2 (en) * | 2014-09-17 | 2016-03-24 | Atmi Taiwan Co., Ltd. | Compositions for etching titanium nitride having compatability with silicon germanide and tungsten |
WO2016076031A1 (en) * | 2014-11-13 | 2016-05-19 | 三菱瓦斯化学株式会社 | Semiconductor element cleaning solution that suppresses damage to tungsten-containing materials, and method for cleaning semiconductor element using same |
TWI816635B (en) * | 2015-10-15 | 2023-10-01 | 日商三菱瓦斯化學股份有限公司 | Liquid composition for cleaning semiconductor components, cleaning method for semiconductor components, and manufacturing method for semiconductor components |
JP6798045B2 (en) * | 2018-01-16 | 2020-12-09 | 株式会社トクヤマ | Processing liquid for semiconductor wafers containing hypochlorite ions |
WO2020049955A1 (en) * | 2018-09-06 | 2020-03-12 | 富士フイルム株式会社 | Chemical solution and substrate processing method |
KR102521227B1 (en) * | 2018-09-12 | 2023-04-13 | 후지필름 가부시키가이샤 | Treatment method of chemical solution and substrate |
US11898081B2 (en) * | 2019-11-21 | 2024-02-13 | Tokyo Ohka Kogyo Co., Ltd. | Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring |
KR20210063248A (en) * | 2019-11-22 | 2021-06-01 | 가부시끼가이샤 도꾸야마 | Quaternary alkyl ammonium hypochlorite solution, method of producing the same, and method for processing semiconductor wafers |
-
2019
- 2019-01-15 JP JP2019566470A patent/JP6798045B2/en active Active
- 2019-01-15 KR KR1020207020591A patent/KR20200110335A/en not_active Application Discontinuation
- 2019-01-15 CN CN201980008715.2A patent/CN111684570B/en active Active
- 2019-01-15 WO PCT/JP2019/000938 patent/WO2019142788A1/en unknown
- 2019-01-15 EP EP19741609.2A patent/EP3726565A4/en active Pending
- 2019-01-15 US US16/962,260 patent/US11390829B2/en active Active
- 2019-01-15 SG SG11202006733TA patent/SG11202006733TA/en unknown
- 2019-01-16 TW TW108101608A patent/TW201932588A/en unknown
- 2019-01-16 TW TW112149234A patent/TW202417601A/en unknown
- 2019-01-16 TW TW110141481A patent/TWI843026B/en active
-
2020
- 2020-11-18 JP JP2020191395A patent/JP7311477B2/en active Active
-
2022
- 2022-06-23 US US17/847,299 patent/US20220325205A1/en active Pending
-
2023
- 2023-07-06 JP JP2023111596A patent/JP2023126320A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
TWI843026B (en) | 2024-05-21 |
CN111684570B (en) | 2024-02-27 |
JP2021040151A (en) | 2021-03-11 |
TW201932588A (en) | 2019-08-16 |
US20220325205A1 (en) | 2022-10-13 |
WO2019142788A1 (en) | 2019-07-25 |
EP3726565A4 (en) | 2021-10-13 |
TW202210663A (en) | 2022-03-16 |
JPWO2019142788A1 (en) | 2020-11-19 |
JP6798045B2 (en) | 2020-12-09 |
US20210062115A1 (en) | 2021-03-04 |
JP7311477B2 (en) | 2023-07-19 |
CN111684570A (en) | 2020-09-18 |
KR20200110335A (en) | 2020-09-23 |
EP3726565A1 (en) | 2020-10-21 |
TW202417601A (en) | 2024-05-01 |
US11390829B2 (en) | 2022-07-19 |
JP2023126320A (en) | 2023-09-07 |
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