SG10201907085QA - Semiconductor substrate processing method - Google Patents
Semiconductor substrate processing methodInfo
- Publication number
- SG10201907085QA SG10201907085QA SG10201907085QA SG10201907085QA SG10201907085QA SG 10201907085Q A SG10201907085Q A SG 10201907085QA SG 10201907085Q A SG10201907085Q A SG 10201907085QA SG 10201907085Q A SG10201907085Q A SG 10201907085QA SG 10201907085Q A SG10201907085Q A SG 10201907085QA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor substrate
- processing method
- substrate processing
- semiconductor
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018152567A JP7235456B2 (en) | 2018-08-14 | 2018-08-14 | Semiconductor substrate processing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201907085QA true SG10201907085QA (en) | 2020-03-30 |
Family
ID=69320683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201907085QA SG10201907085QA (en) | 2018-08-14 | 2019-08-01 | Semiconductor substrate processing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US10872757B2 (en) |
JP (1) | JP7235456B2 (en) |
KR (1) | KR20200019566A (en) |
CN (1) | CN110828297A (en) |
DE (1) | DE102019212101A1 (en) |
MY (1) | MY194179A (en) |
SG (1) | SG10201907085QA (en) |
TW (1) | TWI807083B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11848197B2 (en) | 2020-11-30 | 2023-12-19 | Thinsic Inc. | Integrated method for low-cost wide band gap semiconductor device manufacturing |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003007616A (en) * | 2001-03-23 | 2003-01-10 | Matsushita Electric Ind Co Ltd | Method of manufacturing semiconductor film |
FR2855650B1 (en) | 2003-05-30 | 2006-03-03 | Soitec Silicon On Insulator | SUBSTRATES FOR CONSTRAINTS SYSTEMS AND METHOD FOR CRYSTALLINE GROWTH ON SUCH A SUBSTRATE |
KR100616656B1 (en) * | 2005-01-03 | 2006-08-28 | 삼성전기주식회사 | Method and apparatus of producing a gallium nitride based singlecrystal substrate |
TWI270025B (en) * | 2005-03-21 | 2007-01-01 | Au Optronics Corp | Dual emission display with integrated touch screen and fabricating method thereof |
TWI408264B (en) * | 2005-12-15 | 2013-09-11 | Saint Gobain Cristaux & Detecteurs | New process for growth of low dislocation density gan |
JP2011114018A (en) * | 2009-11-24 | 2011-06-09 | Disco Abrasive Syst Ltd | Method of manufacturing optical device |
JP5375695B2 (en) * | 2010-03-19 | 2013-12-25 | 株式会社リコー | Method for producing group III nitride crystal |
US9424775B2 (en) * | 2012-10-15 | 2016-08-23 | The Hong Kong University Of Science And Technology | LEDoS projection system |
JP6456228B2 (en) * | 2015-04-15 | 2019-01-23 | 株式会社ディスコ | Thin plate separation method |
JP6572694B2 (en) * | 2015-09-11 | 2019-09-11 | 信越化学工業株式会社 | Method for manufacturing SiC composite substrate and method for manufacturing semiconductor substrate |
JP6562819B2 (en) * | 2015-11-12 | 2019-08-21 | 株式会社ディスコ | Method for separating SiC substrate |
WO2017175799A1 (en) * | 2016-04-05 | 2017-10-12 | 株式会社サイコックス | POLYCRYSTALLINE SiC SUBSTRATE AND METHOD FOR MANUFACTURING SAME |
JP6773506B2 (en) * | 2016-09-29 | 2020-10-21 | 株式会社ディスコ | Wafer generation method |
US10697090B2 (en) * | 2017-06-23 | 2020-06-30 | Panasonic Intellectual Property Management Co., Ltd. | Thin-film structural body and method for fabricating thereof |
-
2018
- 2018-08-14 JP JP2018152567A patent/JP7235456B2/en active Active
-
2019
- 2019-07-19 CN CN201910653979.5A patent/CN110828297A/en active Pending
- 2019-07-29 MY MYPI2019004356A patent/MY194179A/en unknown
- 2019-08-01 SG SG10201907085QA patent/SG10201907085QA/en unknown
- 2019-08-07 KR KR1020190096047A patent/KR20200019566A/en active Search and Examination
- 2019-08-08 US US16/535,389 patent/US10872757B2/en active Active
- 2019-08-13 DE DE102019212101.2A patent/DE102019212101A1/en active Pending
- 2019-08-13 TW TW108128708A patent/TWI807083B/en active
Also Published As
Publication number | Publication date |
---|---|
TW202009989A (en) | 2020-03-01 |
US20200058483A1 (en) | 2020-02-20 |
JP7235456B2 (en) | 2023-03-08 |
DE102019212101A1 (en) | 2020-02-20 |
KR20200019566A (en) | 2020-02-24 |
JP2020027895A (en) | 2020-02-20 |
MY194179A (en) | 2022-11-17 |
CN110828297A (en) | 2020-02-21 |
US10872757B2 (en) | 2020-12-22 |
TWI807083B (en) | 2023-07-01 |
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