JP2022003132A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2022003132A5 JP2022003132A5 JP2021155802A JP2021155802A JP2022003132A5 JP 2022003132 A5 JP2022003132 A5 JP 2022003132A5 JP 2021155802 A JP2021155802 A JP 2021155802A JP 2021155802 A JP2021155802 A JP 2021155802A JP 2022003132 A5 JP2022003132 A5 JP 2022003132A5
- Authority
- JP
- Japan
- Prior art keywords
- quaternary alkylammonium
- copper
- aluminum
- less
- hypochlorous acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 4
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- GBOUKGHVOPJFLP-UHFFFAOYSA-N C[N+](C)(C)C.ClO Chemical compound C[N+](C)(C)C.ClO GBOUKGHVOPJFLP-UHFFFAOYSA-N 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023102576A JP7480397B2 (ja) | 2018-05-23 | 2023-06-22 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018099224 | 2018-05-23 | ||
| JP2018099224 | 2018-05-23 | ||
| JP2018099223 | 2018-05-23 | ||
| JP2018099223 | 2018-05-23 | ||
| JP2018116832 | 2018-06-20 | ||
| JP2018116832 | 2018-06-20 | ||
| JP2020521221A JP6982686B2 (ja) | 2018-05-23 | 2019-05-20 | 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020521221A Division JP6982686B2 (ja) | 2018-05-23 | 2019-05-20 | 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023102576A Division JP7480397B2 (ja) | 2018-05-23 | 2023-06-22 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022003132A JP2022003132A (ja) | 2022-01-11 |
| JP2022003132A5 true JP2022003132A5 (enExample) | 2022-05-17 |
| JP7303268B2 JP7303268B2 (ja) | 2023-07-04 |
Family
ID=68616734
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020521221A Active JP6982686B2 (ja) | 2018-05-23 | 2019-05-20 | 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法 |
| JP2021155802A Active JP7303268B2 (ja) | 2018-05-23 | 2021-09-24 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
| JP2023102576A Active JP7480397B2 (ja) | 2018-05-23 | 2023-06-22 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020521221A Active JP6982686B2 (ja) | 2018-05-23 | 2019-05-20 | 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023102576A Active JP7480397B2 (ja) | 2018-05-23 | 2023-06-22 | 次亜塩素酸第４級アルキルアンモニウム溶液 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11572533B2 (enExample) |
| EP (1) | EP3798207A4 (enExample) |
| JP (3) | JP6982686B2 (enExample) |
| KR (2) | KR102764031B1 (enExample) |
| CN (2) | CN117567296A (enExample) |
| TW (2) | TWI818024B (enExample) |
| WO (1) | WO2019225541A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102769981B1 (ko) | 2019-11-22 | 2025-02-18 | 가부시끼가이샤 도꾸야마 | 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법 |
| JP7496410B2 (ja) * | 2020-02-25 | 2024-06-06 | 株式会社トクヤマ | ルテニウムの半導体用処理液 |
| US12466732B2 (en) * | 2020-04-17 | 2025-11-11 | Tokuyama Corporation | Method for producing halogen oxyacid solution |
| KR20220000375A (ko) | 2020-06-25 | 2022-01-03 | 가부시끼가이샤 도꾸야마 | 할로겐 산소산 용액의 제조 방법 및 제조 장치 |
| KR102778825B1 (ko) | 2020-07-31 | 2025-03-13 | 후지필름 가부시키가이샤 | 약액, 약액 수용체, 기판의 처리 방법 |
| CN112337419B (zh) * | 2020-10-27 | 2022-05-13 | 浙江花蝶染料化工有限公司 | 一种4-(1-羟基-1-甲基乙基)-2-丙基咪唑-5-羧酸乙酯的制备方法 |
| KR102352780B1 (ko) | 2021-04-30 | 2022-01-18 | 김을환 | 차아염소산 및 그 이온을 포함하는 잔류염소 생성용 전극 및 이를 구비하는 차아염소산 및 그 이온을 포함하는 잔류염소 생성 장치 |
| TW202313454A (zh) * | 2021-06-07 | 2023-04-01 | 日商德山股份有限公司 | 鹵素含氧酸的製造方法及其製造裝置 |
| WO2025143006A1 (ja) * | 2023-12-28 | 2025-07-03 | 株式会社トクヤマ | 次亜臭素酸第四級アルキルアンモニウム溶液の製造方法及び半導体ウエハの処理方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2256958A (en) * | 1939-05-13 | 1941-09-23 | Pittsburgh Plate Glass Co | Quaternary ammonium hypohalites and method of making same |
| AU572896B2 (en) * | 1983-11-09 | 1988-05-19 | Sumitomo Chemical Company, Limited | 2-phenylbenzotriazoles |
| JP3585437B2 (ja) | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| JP2003119494A (ja) | 2001-10-05 | 2003-04-23 | Nec Corp | 洗浄組成物およびこれを用いた洗浄方法と洗浄装置 |
| WO2005083523A1 (en) | 2004-02-11 | 2005-09-09 | Mallinckrodt Baker Inc. | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
| JP2009081247A (ja) | 2007-09-26 | 2009-04-16 | Panasonic Corp | ルテニウム膜のエッチング方法 |
| JP5405129B2 (ja) * | 2009-01-05 | 2014-02-05 | 三菱マテリアル株式会社 | ペルフルオロアルキルスルホン酸塩の製造方法 |
| KR101329459B1 (ko) * | 2010-02-22 | 2013-11-15 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 술폰산구리 수용액 및 그 제조방법 |
| WO2014034681A1 (ja) * | 2012-08-31 | 2014-03-06 | ライオン株式会社 | ポリオキシエチレンアルキルエーテル硫酸塩の製造方法 |
| JP2014062297A (ja) * | 2012-09-20 | 2014-04-10 | Toshiba Corp | 処理装置、処理液の製造方法、および電子デバイスの製造方法 |
| JP5848690B2 (ja) | 2012-11-26 | 2016-01-27 | 三洋化成工業株式会社 | 第四級塩溶液の製造方法 |
| JP6401491B2 (ja) * | 2013-08-28 | 2018-10-10 | オルガノ株式会社 | 分離膜のスライム抑制方法、逆浸透膜またはナノろ過膜用スライム抑制剤組成物、および分離膜用スライム抑制剤組成物の製造方法 |
| WO2019142788A1 (ja) * | 2018-01-16 | 2019-07-25 | 株式会社トクヤマ | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
| KR102769981B1 (ko) * | 2019-11-22 | 2025-02-18 | 가부시끼가이샤 도꾸야마 | 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법 |
-
2019
- 2019-05-20 KR KR1020207033481A patent/KR102764031B1/ko active Active
- 2019-05-20 CN CN202311548047.7A patent/CN117567296A/zh active Pending
- 2019-05-20 EP EP19807457.7A patent/EP3798207A4/en active Pending
- 2019-05-20 WO PCT/JP2019/019898 patent/WO2019225541A1/ja not_active Ceased
- 2019-05-20 KR KR1020247015510A patent/KR102812765B1/ko active Active
- 2019-05-20 JP JP2020521221A patent/JP6982686B2/ja active Active
- 2019-05-20 CN CN201980034553.XA patent/CN112189006B/zh active Active
- 2019-05-20 US US17/057,207 patent/US11572533B2/en active Active
- 2019-05-22 TW TW108117645A patent/TWI818024B/zh active
- 2019-05-22 TW TW112134627A patent/TWI876529B/zh active
-
2021
- 2021-09-24 JP JP2021155802A patent/JP7303268B2/ja active Active
-
2023
- 2023-06-22 JP JP2023102576A patent/JP7480397B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022003132A5 (enExample) | ||
| JP2021040151A5 (enExample) | ||
| JP7311477B2 (ja) | 次亜塩素酸イオンを含む半導体ウェハの処理液 | |
| JP5934254B2 (ja) | 高純度酸化スズ（ｉｉ）の製造法 | |
| JP6761166B2 (ja) | ウェットエッチング方法及びエッチング液 | |
| JP2015517736A5 (enExample) | ||
| JP2009545159A5 (enExample) | ||
| JP7321138B2 (ja) | ルテニウムの半導体用処理液及びその製造方法 | |
| KR20140005411A (ko) | 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법 | |
| TW200809003A (en) | Apparatus for applying a plating solution for electroless deposition | |
| TW201631645A (zh) | 基板處理方法及半導體元件的製造方法 | |
| WO2022030627A1 (ja) | 半導体ウエハ用処理液 | |
| TW201333266A (zh) | 含有銅層及／或銅合金層之金屬膜用蝕刻液組成物、及使用此金屬膜用蝕刻液組成物的蝕刻方法 | |
| CN108130535B (zh) | 钛钨合金的蚀刻液 | |
| JP6112644B1 (ja) | 宝飾用Ｐｔ合金 | |
| WO2014115758A1 (ja) | エッチング液 | |
| JPWO2019142080A5 (enExample) | ||
| JP2002161322A (ja) | 電解コンデンサ電極用アルミニウム箔 | |
| JP2023021941A5 (enExample) | ||
| KR20230111234A (ko) | 반도체 웨이퍼의 처리액 및 그 제조 방법 | |
| JP2013516064A (ja) | エッチング液及び電子素子の製造方法 | |
| JP4520385B2 (ja) | 電解コンデンサ用アルミニウム電極箔の製造方法 | |
| JPWO2021076676A5 (enExample) | ||
| KR102668574B1 (ko) | 식각 조성물 | |
| TWI901774B (zh) | 半導體基板清洗用組成物以及清洗方法 |