TWI818024B - 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法 - Google Patents

次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法 Download PDF

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TWI818024B
TWI818024B TW108117645A TW108117645A TWI818024B TW I818024 B TWI818024 B TW I818024B TW 108117645 A TW108117645 A TW 108117645A TW 108117645 A TW108117645 A TW 108117645A TW I818024 B TWI818024 B TW I818024B
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Taiwan
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solution
quaternary alkylammonium
reaction
hypochlorite
hypochlorite solution
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TW108117645A
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English (en)
Chinese (zh)
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TW202003446A (zh
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下田享史
吉川由樹
根岸貴幸
東野誠司
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日商德山股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B11/00—Oxides or oxyacids of halogens; Salts thereof
    • C01B11/04—Hypochlorous acid
    • C01B11/06—Hypochlorites
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/68—Preparation of compounds containing amino groups bound to a carbon skeleton from amines, by reactions not involving amino groups, e.g. reduction of unsaturated amines, aromatisation, or substitution of the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/82—Purification; Separation; Stabilisation; Use of additives
    • C07C209/90—Stabilisation; Use of additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW108117645A 2018-05-23 2019-05-22 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法 TWI818024B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2018099224 2018-05-23
JP2018-099224 2018-05-23
JP2018099223 2018-05-23
JP2018-099223 2018-05-23
JP2018-116832 2018-06-20
JP2018116832 2018-06-20

Publications (2)

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TW202003446A TW202003446A (zh) 2020-01-16
TWI818024B true TWI818024B (zh) 2023-10-11

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TW108117645A TWI818024B (zh) 2018-05-23 2019-05-22 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法
TW112134627A TWI876529B (zh) 2018-05-23 2019-05-22 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的洗淨方法

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US (1) US11572533B2 (enExample)
EP (1) EP3798207A4 (enExample)
JP (3) JP6982686B2 (enExample)
KR (2) KR102764031B1 (enExample)
CN (2) CN117567296A (enExample)
TW (2) TWI818024B (enExample)
WO (1) WO2019225541A1 (enExample)

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KR102769981B1 (ko) 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법
JP7496410B2 (ja) * 2020-02-25 2024-06-06 株式会社トクヤマ ルテニウムの半導体用処理液
US12466732B2 (en) * 2020-04-17 2025-11-11 Tokuyama Corporation Method for producing halogen oxyacid solution
KR20220000375A (ko) 2020-06-25 2022-01-03 가부시끼가이샤 도꾸야마 할로겐 산소산 용액의 제조 방법 및 제조 장치
KR102778825B1 (ko) 2020-07-31 2025-03-13 후지필름 가부시키가이샤 약액, 약액 수용체, 기판의 처리 방법
CN112337419B (zh) * 2020-10-27 2022-05-13 浙江花蝶染料化工有限公司 一种4-(1-羟基-1-甲基乙基)-2-丙基咪唑-5-羧酸乙酯的制备方法
KR102352780B1 (ko) 2021-04-30 2022-01-18 김을환 차아염소산 및 그 이온을 포함하는 잔류염소 생성용 전극 및 이를 구비하는 차아염소산 및 그 이온을 포함하는 잔류염소 생성 장치
TW202313454A (zh) * 2021-06-07 2023-04-01 日商德山股份有限公司 鹵素含氧酸的製造方法及其製造裝置
WO2025143006A1 (ja) * 2023-12-28 2025-07-03 株式会社トクヤマ 次亜臭素酸第四級アルキルアンモニウム溶液の製造方法及び半導体ウエハの処理方法

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US2256958A (en) * 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
TW200526774A (en) * 2004-02-11 2005-08-16 Mallinckrodt Baker Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof

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JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP2003119494A (ja) 2001-10-05 2003-04-23 Nec Corp 洗浄組成物およびこれを用いた洗浄方法と洗浄装置
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
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KR101329459B1 (ko) * 2010-02-22 2013-11-15 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 고순도 술폰산구리 수용액 및 그 제조방법
WO2014034681A1 (ja) * 2012-08-31 2014-03-06 ライオン株式会社 ポリオキシエチレンアルキルエーテル硫酸塩の製造方法
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JP5848690B2 (ja) 2012-11-26 2016-01-27 三洋化成工業株式会社 第四級塩溶液の製造方法
JP6401491B2 (ja) * 2013-08-28 2018-10-10 オルガノ株式会社 分離膜のスライム抑制方法、逆浸透膜またはナノろ過膜用スライム抑制剤組成物、および分離膜用スライム抑制剤組成物の製造方法
WO2019142788A1 (ja) * 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
KR102769981B1 (ko) * 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법

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Publication number Priority date Publication date Assignee Title
US2256958A (en) * 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
TW200526774A (en) * 2004-02-11 2005-08-16 Mallinckrodt Baker Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof

Also Published As

Publication number Publication date
TW202400554A (zh) 2024-01-01
KR20240073135A (ko) 2024-05-24
KR102812765B1 (ko) 2025-05-26
EP3798207A1 (en) 2021-03-31
CN112189006A (zh) 2021-01-05
JP6982686B2 (ja) 2021-12-17
KR102764031B1 (ko) 2025-02-07
JP2023126263A (ja) 2023-09-07
US11572533B2 (en) 2023-02-07
KR20210015796A (ko) 2021-02-10
JPWO2019225541A1 (ja) 2021-02-12
WO2019225541A1 (ja) 2019-11-28
CN117567296A (zh) 2024-02-20
US20210309942A1 (en) 2021-10-07
JP7303268B2 (ja) 2023-07-04
EP3798207A4 (en) 2022-03-23
CN112189006B (zh) 2023-11-21
JP7480397B2 (ja) 2024-05-09
TW202003446A (zh) 2020-01-16
TWI876529B (zh) 2025-03-11
JP2022003132A (ja) 2022-01-11

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