CN117567296A - 次氯酸季烷基铵溶液的制造方法以及半导体晶圆的处理方法 - Google Patents

次氯酸季烷基铵溶液的制造方法以及半导体晶圆的处理方法 Download PDF

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Publication number
CN117567296A
CN117567296A CN202311548047.7A CN202311548047A CN117567296A CN 117567296 A CN117567296 A CN 117567296A CN 202311548047 A CN202311548047 A CN 202311548047A CN 117567296 A CN117567296 A CN 117567296A
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Prior art keywords
quaternary alkylammonium
solution
reaction
hypochlorite
hypochlorite solution
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Pending
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CN202311548047.7A
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English (en)
Chinese (zh)
Inventor
下田享史
吉川由树
根岸贵幸
东野诚司
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Tokuyama Corp
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Tokuyama Corp
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Publication of CN117567296A publication Critical patent/CN117567296A/zh
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B11/00—Oxides or oxyacids of halogens; Salts thereof
    • C01B11/04—Hypochlorous acid
    • C01B11/06—Hypochlorites
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/68—Preparation of compounds containing amino groups bound to a carbon skeleton from amines, by reactions not involving amino groups, e.g. reduction of unsaturated amines, aromatisation, or substitution of the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/82—Purification; Separation; Stabilisation; Use of additives
    • C07C209/90—Stabilisation; Use of additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Detergent Compositions (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN202311548047.7A 2018-05-23 2019-05-20 次氯酸季烷基铵溶液的制造方法以及半导体晶圆的处理方法 Pending CN117567296A (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2018099224 2018-05-23
JP2018-099224 2018-05-23
JP2018099223 2018-05-23
JP2018-099223 2018-05-23
JP2018-116832 2018-06-20
JP2018116832 2018-06-20
PCT/JP2019/019898 WO2019225541A1 (ja) 2018-05-23 2019-05-20 次亜塩素酸第４級アルキルアンモニウム溶液、その製造方法および半導体ウエハの洗浄方法
CN201980034553.XA CN112189006B (zh) 2018-05-23 2019-05-20 次氯酸季烷基铵溶液、其制造方法以及半导体晶圆的清洗方法

Related Parent Applications (1)

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CN201980034553.XA Division CN112189006B (zh) 2018-05-23 2019-05-20 次氯酸季烷基铵溶液、其制造方法以及半导体晶圆的清洗方法

Publications (1)

Publication Number Publication Date
CN117567296A true CN117567296A (zh) 2024-02-20

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Family Applications (2)

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CN202311548047.7A Pending CN117567296A (zh) 2018-05-23 2019-05-20 次氯酸季烷基铵溶液的制造方法以及半导体晶圆的处理方法
CN201980034553.XA Active CN112189006B (zh) 2018-05-23 2019-05-20 次氯酸季烷基铵溶液、其制造方法以及半导体晶圆的清洗方法

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Country Status (7)

Country Link
US (1) US11572533B2 (enExample)
EP (1) EP3798207A4 (enExample)
JP (3) JP6982686B2 (enExample)
KR (2) KR102764031B1 (enExample)
CN (2) CN117567296A (enExample)
TW (2) TWI818024B (enExample)
WO (1) WO2019225541A1 (enExample)

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KR102769981B1 (ko) 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법
JP7496410B2 (ja) * 2020-02-25 2024-06-06 株式会社トクヤマ ルテニウムの半導体用処理液
US12466732B2 (en) * 2020-04-17 2025-11-11 Tokuyama Corporation Method for producing halogen oxyacid solution
KR20220000375A (ko) 2020-06-25 2022-01-03 가부시끼가이샤 도꾸야마 할로겐 산소산 용액의 제조 방법 및 제조 장치
KR102778825B1 (ko) 2020-07-31 2025-03-13 후지필름 가부시키가이샤 약액, 약액 수용체, 기판의 처리 방법
CN112337419B (zh) * 2020-10-27 2022-05-13 浙江花蝶染料化工有限公司 一种4-(1-羟基-1-甲基乙基)-2-丙基咪唑-5-羧酸乙酯的制备方法
KR102352780B1 (ko) 2021-04-30 2022-01-18 김을환 차아염소산 및 그 이온을 포함하는 잔류염소 생성용 전극 및 이를 구비하는 차아염소산 및 그 이온을 포함하는 잔류염소 생성 장치
TW202313454A (zh) * 2021-06-07 2023-04-01 日商德山股份有限公司 鹵素含氧酸的製造方法及其製造裝置
WO2025143006A1 (ja) * 2023-12-28 2025-07-03 株式会社トクヤマ 次亜臭素酸第四級アルキルアンモニウム溶液の製造方法及び半導体ウエハの処理方法

Citations (2)

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CN1954267A (zh) * 2004-02-11 2007-04-25 马林克罗特贝克公司 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物
CN103681414A (zh) * 2012-09-20 2014-03-26 株式会社东芝 处理装置、制造处理液体的方法和制造电子器件的方法

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US2256958A (en) * 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
AU572896B2 (en) * 1983-11-09 1988-05-19 Sumitomo Chemical Company, Limited 2-phenylbenzotriazoles
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP2003119494A (ja) 2001-10-05 2003-04-23 Nec Corp 洗浄組成物およびこれを用いた洗浄方法と洗浄装置
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
JP5405129B2 (ja) * 2009-01-05 2014-02-05 三菱マテリアル株式会社 ペルフルオロアルキルスルホン酸塩の製造方法
KR101329459B1 (ko) * 2010-02-22 2013-11-15 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 고순도 술폰산구리 수용액 및 그 제조방법
WO2014034681A1 (ja) * 2012-08-31 2014-03-06 ライオン株式会社 ポリオキシエチレンアルキルエーテル硫酸塩の製造方法
JP5848690B2 (ja) 2012-11-26 2016-01-27 三洋化成工業株式会社 第四級塩溶液の製造方法
JP6401491B2 (ja) * 2013-08-28 2018-10-10 オルガノ株式会社 分離膜のスライム抑制方法、逆浸透膜またはナノろ過膜用スライム抑制剤組成物、および分離膜用スライム抑制剤組成物の製造方法
WO2019142788A1 (ja) * 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
KR102769981B1 (ko) * 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
CN1954267A (zh) * 2004-02-11 2007-04-25 马林克罗特贝克公司 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物
CN101833251A (zh) * 2004-02-11 2010-09-15 马林克罗特贝克公司 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物
CN103681414A (zh) * 2012-09-20 2014-03-26 株式会社东芝 处理装置、制造处理液体的方法和制造电子器件的方法

Also Published As

Publication number Publication date
TW202400554A (zh) 2024-01-01
KR20240073135A (ko) 2024-05-24
KR102812765B1 (ko) 2025-05-26
EP3798207A1 (en) 2021-03-31
CN112189006A (zh) 2021-01-05
JP6982686B2 (ja) 2021-12-17
KR102764031B1 (ko) 2025-02-07
JP2023126263A (ja) 2023-09-07
US11572533B2 (en) 2023-02-07
KR20210015796A (ko) 2021-02-10
JPWO2019225541A1 (ja) 2021-02-12
WO2019225541A1 (ja) 2019-11-28
US20210309942A1 (en) 2021-10-07
JP7303268B2 (ja) 2023-07-04
EP3798207A4 (en) 2022-03-23
TWI818024B (zh) 2023-10-11
CN112189006B (zh) 2023-11-21
JP7480397B2 (ja) 2024-05-09
TW202003446A (zh) 2020-01-16
TWI876529B (zh) 2025-03-11
JP2022003132A (ja) 2022-01-11

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