JP2009545159A5 - - Google Patents
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- Publication number
- JP2009545159A5 JP2009545159A5 JP2009521753A JP2009521753A JP2009545159A5 JP 2009545159 A5 JP2009545159 A5 JP 2009545159A5 JP 2009521753 A JP2009521753 A JP 2009521753A JP 2009521753 A JP2009521753 A JP 2009521753A JP 2009545159 A5 JP2009545159 A5 JP 2009545159A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing composition
- composition according
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 claims 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 11
- 239000000126 substance Substances 0.000 claims 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 239000000377 silicon dioxide Substances 0.000 claims 5
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims 3
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims 2
- 150000001768 cations Chemical class 0.000 claims 2
- -1 iron (III) compound Chemical class 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- 239000004342 Benzoyl peroxide Substances 0.000 claims 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims 1
- 229910002651 NO3 Inorganic materials 0.000 claims 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 125000003710 aryl alkyl group Chemical group 0.000 claims 1
- 235000019400 benzoyl peroxide Nutrition 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000011164 primary particle Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 claims 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 claims 1
- GJSGYPDDPQRWPK-UHFFFAOYSA-N tetrapentylammonium Chemical compound CCCCC[N+](CCCCC)(CCCCC)CCCCC GJSGYPDDPQRWPK-UHFFFAOYSA-N 0.000 claims 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/491,612 US20080020680A1 (en) | 2006-07-24 | 2006-07-24 | Rate-enhanced CMP compositions for dielectric films |
| PCT/US2007/015872 WO2008013678A1 (en) | 2006-07-24 | 2007-07-12 | Rate-enhanced cmp compositions for dielectric films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009545159A JP2009545159A (ja) | 2009-12-17 |
| JP2009545159A5 true JP2009545159A5 (enExample) | 2010-08-26 |
Family
ID=38972027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009521753A Pending JP2009545159A (ja) | 2006-07-24 | 2007-07-12 | 除去速度の高い誘電体膜のためのcmp組成物 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20080020680A1 (enExample) |
| EP (1) | EP2052049A4 (enExample) |
| JP (1) | JP2009545159A (enExample) |
| KR (1) | KR101325333B1 (enExample) |
| CN (2) | CN101490203A (enExample) |
| IL (1) | IL196220A (enExample) |
| MY (1) | MY155014A (enExample) |
| SG (1) | SG174001A1 (enExample) |
| TW (1) | TWI462999B (enExample) |
| WO (1) | WO2008013678A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5403922B2 (ja) * | 2008-02-26 | 2014-01-29 | 富士フイルム株式会社 | 研磨液および研磨方法 |
| KR101247890B1 (ko) * | 2008-09-19 | 2013-03-26 | 캐보트 마이크로일렉트로닉스 코포레이션 | 저-k 유전체를 위한 장벽 슬러리 |
| JP2012510161A (ja) * | 2008-11-26 | 2012-04-26 | アプライド マテリアルズ インコーポレイテッド | 化学機械研磨のための終点制御を伴う化学薬品および研磨剤粒子の二系統混合 |
| CN102051126B (zh) * | 2009-11-06 | 2014-11-05 | 安集微电子(上海)有限公司 | 一种用于钨化学机械抛光的抛光液 |
| JP5518523B2 (ja) * | 2010-02-25 | 2014-06-11 | 富士フイルム株式会社 | 化学的機械的研磨液及び研磨方法 |
| US8865013B2 (en) * | 2011-08-15 | 2014-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing tungsten |
| JP6691774B2 (ja) * | 2013-07-11 | 2020-05-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびその製造方法 |
| US9275899B2 (en) | 2014-06-27 | 2016-03-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing tungsten |
| US10570313B2 (en) | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| JP6730859B2 (ja) * | 2015-07-15 | 2020-07-29 | 株式会社フジミインコーポレーテッド | 研磨用組成物および磁気ディスク基板製造方法 |
| WO2017147891A1 (en) * | 2016-03-04 | 2017-09-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a semiconductor substrate |
| WO2018058347A1 (en) * | 2016-09-28 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds |
| JP6817896B2 (ja) * | 2017-05-26 | 2021-01-20 | 株式会社荏原製作所 | 基板研磨装置および基板研磨方法 |
| US10683439B2 (en) * | 2018-03-15 | 2020-06-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
| JP7222750B2 (ja) * | 2019-02-14 | 2023-02-15 | ニッタ・デュポン株式会社 | 研磨用組成物 |
| JP2020203980A (ja) * | 2019-06-17 | 2020-12-24 | 日本キャボット・マイクロエレクトロニクス株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
| US12291655B2 (en) * | 2021-04-27 | 2025-05-06 | DuPont Electronic Materials Holding, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230833A (en) * | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5196353A (en) * | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) * | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) * | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) * | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5964643A (en) * | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) * | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
| JPH1026576A (ja) * | 1996-07-12 | 1998-01-27 | Central Japan Railway Co | 道床バラストの劣化度診断・評価装置 |
| US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| JPH11349925A (ja) * | 1998-06-05 | 1999-12-21 | Fujimi Inc | エッジポリッシング用組成物 |
| US6558570B2 (en) * | 1998-07-01 | 2003-05-06 | Micron Technology, Inc. | Polishing slurry and method for chemical-mechanical polishing |
| WO2000024842A1 (en) * | 1998-10-23 | 2000-05-04 | Arch Specialty Chemicals, Inc. | A chemical mechanical polishing slurry system having an activator solution |
| US6046112A (en) * | 1998-12-14 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Chemical mechanical polishing slurry |
| FR2789998B1 (fr) * | 1999-02-18 | 2005-10-07 | Clariant France Sa | Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium |
| US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
| US6350393B2 (en) * | 1999-11-04 | 2002-02-26 | Cabot Microelectronics Corporation | Use of CsOH in a dielectric CMP slurry |
| KR100343391B1 (ko) * | 1999-11-18 | 2002-08-01 | 삼성전자 주식회사 | 화학 및 기계적 연마용 비선택성 슬러리 및 그제조방법과, 이를 이용하여 웨이퍼상의 절연층 내에플러그를 형성하는 방법 |
| KR100396883B1 (ko) * | 2000-11-23 | 2003-09-02 | 삼성전자주식회사 | 화학기계적 연마용 슬러리 및 이를 이용한 구리 금속배선제조방법 |
| US6440857B1 (en) * | 2001-01-25 | 2002-08-27 | Everlight Usa, Inc. | Two-step CMP method and employed polishing compositions |
| KR100464429B1 (ko) * | 2002-08-16 | 2005-01-03 | 삼성전자주식회사 | 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법 |
| CN1311009C (zh) * | 2001-11-15 | 2007-04-18 | 三星电子株式会社 | 添加剂组合物、含有该添加剂组合物的淤浆组合物及使用该淤浆组合物抛光物体的方法 |
| KR100449610B1 (ko) * | 2001-11-27 | 2004-09-21 | 제일모직주식회사 | 절연층 연마용 슬러리 조성물 |
| US6719920B2 (en) * | 2001-11-30 | 2004-04-13 | Intel Corporation | Slurry for polishing a barrier layer |
| US6660638B1 (en) * | 2002-01-03 | 2003-12-09 | Taiwan Semiconductor Manufacturing Company | CMP process leaving no residual oxide layer or slurry particles |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| WO2003075332A1 (fr) * | 2002-03-04 | 2003-09-12 | Fujimi Incorporated | Composition de polissage et creation d'une structure en fil |
| US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
| KR20040000009A (ko) * | 2002-06-19 | 2004-01-03 | 주식회사 하이닉스반도체 | 플라티늄-cmp용 용액 |
| DE60330578D1 (de) * | 2002-09-25 | 2010-01-28 | Asahi Glass Co Ltd | Poliermittelzusammensetzung und Polierverfahren |
| TW200424299A (en) * | 2002-12-26 | 2004-11-16 | Kao Corp | Polishing composition |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| TW200427827A (en) * | 2003-05-30 | 2004-12-16 | Sumitomo Chemical Co | Metal polishing composition |
| JP4608856B2 (ja) * | 2003-07-24 | 2011-01-12 | 信越半導体株式会社 | ウエーハの研磨方法 |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7087529B2 (en) * | 2003-10-02 | 2006-08-08 | Amcol International Corporation | Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces |
| KR100630678B1 (ko) * | 2003-10-09 | 2006-10-02 | 삼성전자주식회사 | 알루미늄막의 화학적 기계적 연마용 슬러리, 그 슬러리를사용하는 화학적 기계적 연마 방법 및 그 방법을 사용하는알루미늄 배선 형성방법 |
| US20050076580A1 (en) * | 2003-10-10 | 2005-04-14 | Air Products And Chemicals, Inc. | Polishing composition and use thereof |
| US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
| TWI363796B (en) * | 2004-06-14 | 2012-05-11 | Kao Corp | Polishing composition |
| US7247567B2 (en) * | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
| KR100648264B1 (ko) * | 2004-08-17 | 2006-11-23 | 삼성전자주식회사 | 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법 |
| JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| US20060110923A1 (en) * | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
| US7732393B2 (en) * | 2006-03-20 | 2010-06-08 | Cabot Microelectronics Corporation | Oxidation-stabilized CMP compositions and methods |
-
2006
- 2006-07-24 US US11/491,612 patent/US20080020680A1/en not_active Abandoned
-
2007
- 2007-07-03 TW TW096124183A patent/TWI462999B/zh active
- 2007-07-12 KR KR1020097001539A patent/KR101325333B1/ko active Active
- 2007-07-12 WO PCT/US2007/015872 patent/WO2008013678A1/en not_active Ceased
- 2007-07-12 SG SG2011053154A patent/SG174001A1/en unknown
- 2007-07-12 JP JP2009521753A patent/JP2009545159A/ja active Pending
- 2007-07-12 MY MYPI20090320A patent/MY155014A/en unknown
- 2007-07-12 CN CNA2007800271143A patent/CN101490203A/zh active Pending
- 2007-07-12 CN CN201410073709.4A patent/CN103937411A/zh active Pending
- 2007-07-12 EP EP07810367A patent/EP2052049A4/en not_active Withdrawn
-
2008
- 2008-12-25 IL IL196220A patent/IL196220A/en active IP Right Grant
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