KR101325333B1 - 유전체 필름을 위한 속도 개선 ｃｍｐ 조성물 - Google Patents

유전체 필름을 위한 속도 개선 ｃｍｐ 조성물 Download PDF

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Publication number
KR101325333B1
KR101325333B1 KR1020097001539A KR20097001539A KR101325333B1 KR 101325333 B1 KR101325333 B1 KR 101325333B1 KR 1020097001539 A KR1020097001539 A KR 1020097001539A KR 20097001539 A KR20097001539 A KR 20097001539A KR 101325333 B1 KR101325333 B1 KR 101325333B1
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South Korea
Prior art keywords
polishing composition
polishing
substrate
silica
ppm
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Korean (ko)
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KR20090031589A (ko
Inventor
로버트 바카시
벤자민 베이어
잔 첸
제프리 챔버레인
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20090031589A publication Critical patent/KR20090031589A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020097001539A 2006-07-24 2007-07-12 유전체 필름을 위한 속도 개선 ｃｍｐ 조성물 Active KR101325333B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/491,612 US20080020680A1 (en) 2006-07-24 2006-07-24 Rate-enhanced CMP compositions for dielectric films
US11/491,612 2006-07-24
PCT/US2007/015872 WO2008013678A1 (en) 2006-07-24 2007-07-12 Rate-enhanced cmp compositions for dielectric films

Publications (2)

Publication Number Publication Date
KR20090031589A KR20090031589A (ko) 2009-03-26
KR101325333B1 true KR101325333B1 (ko) 2013-11-11

Family

ID=38972027

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097001539A Active KR101325333B1 (ko) 2006-07-24 2007-07-12 유전체 필름을 위한 속도 개선 ｃｍｐ 조성물

Country Status (10)

Country Link
US (1) US20080020680A1 (enExample)
EP (1) EP2052049A4 (enExample)
JP (1) JP2009545159A (enExample)
KR (1) KR101325333B1 (enExample)
CN (2) CN101490203A (enExample)
IL (1) IL196220A (enExample)
MY (1) MY155014A (enExample)
SG (1) SG174001A1 (enExample)
TW (1) TWI462999B (enExample)
WO (1) WO2008013678A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160001684A (ko) * 2014-06-27 2016-01-06 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 화학적 기계 연마 조성물 및 텅스텐의 연마 방법

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JP5403922B2 (ja) * 2008-02-26 2014-01-29 富士フイルム株式会社 研磨液および研磨方法
KR101247890B1 (ko) * 2008-09-19 2013-03-26 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전체를 위한 장벽 슬러리
JP2012510161A (ja) * 2008-11-26 2012-04-26 アプライド マテリアルズ インコーポレイテッド 化学機械研磨のための終点制御を伴う化学薬品および研磨剤粒子の二系統混合
CN102051126B (zh) * 2009-11-06 2014-11-05 安集微电子（上海）有限公司 一种用于钨化学机械抛光的抛光液
JP5518523B2 (ja) * 2010-02-25 2014-06-11 富士フイルム株式会社 化学的機械的研磨液及び研磨方法
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
JP6691774B2 (ja) * 2013-07-11 2020-05-13 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
JP6730859B2 (ja) * 2015-07-15 2020-07-29 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
WO2017147891A1 (en) * 2016-03-04 2017-09-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate
WO2018058347A1 (en) * 2016-09-28 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds
JP6817896B2 (ja) * 2017-05-26 2021-01-20 株式会社荏原製作所 基板研磨装置および基板研磨方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

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KR102427996B1 (ko) * 2014-06-27 2022-08-01 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 화학적 기계 연마 조성물 및 텅스텐의 연마 방법

Also Published As

Publication number Publication date
TWI462999B (zh) 2014-12-01
EP2052049A4 (en) 2010-08-25
MY155014A (en) 2015-08-28
CN103937411A (zh) 2014-07-23
IL196220A (en) 2014-04-30
KR20090031589A (ko) 2009-03-26
SG174001A1 (en) 2011-09-29
IL196220A0 (en) 2009-09-22
EP2052049A1 (en) 2009-04-29
CN101490203A (zh) 2009-07-22
JP2009545159A (ja) 2009-12-17
US20080020680A1 (en) 2008-01-24
WO2008013678A1 (en) 2008-01-31
TW200813202A (en) 2008-03-16

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