JP5596344B2 - コロイダルシリカを利用した酸化ケイ素研磨方法 - Google Patents
コロイダルシリカを利用した酸化ケイ素研磨方法 Download PDFInfo
- Publication number
- JP5596344B2 JP5596344B2 JP2009518147A JP2009518147A JP5596344B2 JP 5596344 B2 JP5596344 B2 JP 5596344B2 JP 2009518147 A JP2009518147 A JP 2009518147A JP 2009518147 A JP2009518147 A JP 2009518147A JP 5596344 B2 JP5596344 B2 JP 5596344B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- substrate
- polishing composition
- silicon oxide
- liquid carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Description
(i)少なくとも1層の酸化ケイ素層を含む基板を供給し、
(ii)(a)液体キャリヤー、および
(b)該液体キャリヤー中に懸濁した平均1次粒子径が20nm〜30nmであるゾル-ゲルコロイダルシリカ研削粒子、
を含む化学的-機械的研磨用組成物を供給し、
(iii )該基板を、研磨用パッドおよび該化学的-機械的研磨用組成物と接触させ、
(iv)該基板を該研磨用パッドおよび該化学的-機械的研磨用組成物に対して相対的に動かし、そして
(v)該酸化ケイ素の少なくとも1部を研削して該基板を研磨する、
ことを含む、基板を化学的-機械的に研磨する方法、
を提供する。
(i)少なくとも1層の酸化ケイ素層を含む基板を供給し、
(ii)(a)液体キャリヤー、および
(b)該液体キャリヤー中に懸濁した平均1次粒子径が20nm〜30nmであるゾル-ゲルコロイダルシリカ研削粒子、
を含む化学的-機械的研磨用組成物を供給し、
(iii )該基板を、研磨用パッドおよび該化学的-機械的研磨用組成物と接触させ、
(iv)該基板を該研磨用パッドおよび該化学的-機械的研磨用組成物に対して相対的に動かし、そして
(v)該酸化ケイ素の少なくとも1部を研削して該基板を研磨する、
ことを含む、基板を化学的-機械的に研磨する方法、
を提供する。該研磨組成物は(a)液体キャリヤー、及び(b)該液体キャリヤー中に懸濁した平均1次粒子径が20nm〜30nmであるゾル−ゲルコロイダルシリカ研削粒子を、含み、本質的にそれから成り、又はそれから成る。
この実施例は、研磨用組成物中に存在するゾル−ゲル加工コロイダルシリカ粒子の粒子径及び濃度と、そのような化学的−機械的研磨組成物により達成される酸化ケイ素及びタングステンの除去速度、との関係を説明する。
この実施例は、研磨用組成物中に存在するゾル−ゲル加工コロイダルシリカ粒子の粒子径と、そのような化学的−機械的研磨用組成物により達成される酸化ケイ素及びタングステンの除去速度、との関係を説明する。
この実施例は、25nmの平均粒子径を持つゾル−ゲル加工コロイダルシリカ粒子を含む研磨用組成物のpHと、そのような化学的−機械的研磨用組成物により達成される酸化ケイ素及びタングステンの除去速度との関係を説明する。
Claims (7)
- (i)少なくとも1層の酸化ケイ素層および少なくとも1層のタングステン層を含む基板を供給し、
(ii)(a)液体キャリヤー、
(b)研削粒子、該研削粒子は、該液体キャリヤー中に懸濁したゾル-ゲルコロイダルシリカ研削粒子のみからなり、該研削粒子は、該液体キャリヤーとその中に溶解もしくは懸濁されている成分との質量を基準として5質量%〜15質量%の量で存在している、
(c)酸化剤、および
(d)錯化剤
を含む化学的-機械的研磨用組成物であって、該ゾル-ゲルコロイダルシリカ研削粒子は、
平均1次粒子径が20nm〜30nmである、化学的-機械的研磨用組成物を供給し、
(iii)該基板を、研磨用パッドおよび該化学的-機械的研磨用組成物と接触させ、
(iv)該基板を該研磨用パッドおよび該化学的-機械的研磨用組成物に対して相対的に動かし、そして
(v)該酸化ケイ素の少なくとも1部を研削して該基板を研磨する、
ことを含む、基板を化学的-機械的に研磨する方法。 - 該液体キャリヤーが水を含む、請求項1に記載の方法。
- 該研削粒子が20nm〜28nmの平均1次粒子径を有する、請求項1に記載の方法。
- その中に溶解または懸濁しているあらゆる成分を含めた液体キャリヤーが5またはそれより小さいpHを有する、請求項1に記載の方法。
- その中に溶解または懸濁しているあらゆる成分を含めた該液体キャリヤーが7またはそれより小さいpHを有する、請求項1に記載の方法。
- 該酸化ケイ素が、500Å/分〜4000Å/分の速度で該基板から除去される、請求項1に記載の方法。
- 該タングステンが、1000Å/分〜3000Å/分の速度で該基板から除去される、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/478,004 | 2006-06-29 | ||
US11/478,004 US20080220610A1 (en) | 2006-06-29 | 2006-06-29 | Silicon oxide polishing method utilizing colloidal silica |
PCT/US2007/013943 WO2008005164A1 (en) | 2006-06-29 | 2007-06-14 | Silicon oxide polishing method utilizing colloidal silica |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009543337A JP2009543337A (ja) | 2009-12-03 |
JP2009543337A5 JP2009543337A5 (ja) | 2010-06-03 |
JP5596344B2 true JP5596344B2 (ja) | 2014-09-24 |
Family
ID=38894886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009518147A Expired - Fee Related JP5596344B2 (ja) | 2006-06-29 | 2007-06-14 | コロイダルシリカを利用した酸化ケイ素研磨方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US20080220610A1 (ja) |
EP (1) | EP2038916A4 (ja) |
JP (1) | JP5596344B2 (ja) |
KR (1) | KR101378259B1 (ja) |
CN (1) | CN101479836A (ja) |
IL (1) | IL195699A (ja) |
MY (1) | MY151925A (ja) |
SG (1) | SG172740A1 (ja) |
TW (1) | TWI375264B (ja) |
WO (1) | WO2008005164A1 (ja) |
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JP5407188B2 (ja) * | 2008-06-11 | 2014-02-05 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤 |
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-
2006
- 2006-06-29 US US11/478,004 patent/US20080220610A1/en not_active Abandoned
-
2007
- 2007-04-27 TW TW096115068A patent/TWI375264B/zh not_active IP Right Cessation
- 2007-06-14 JP JP2009518147A patent/JP5596344B2/ja not_active Expired - Fee Related
- 2007-06-14 WO PCT/US2007/013943 patent/WO2008005164A1/en active Application Filing
- 2007-06-14 SG SG2011047719A patent/SG172740A1/en unknown
- 2007-06-14 EP EP07796094A patent/EP2038916A4/en not_active Withdrawn
- 2007-06-14 CN CNA2007800241383A patent/CN101479836A/zh active Pending
- 2007-06-14 MY MYPI20085321 patent/MY151925A/en unknown
-
2008
- 2008-12-03 IL IL195699A patent/IL195699A/en not_active IP Right Cessation
- 2008-12-26 KR KR1020087031580A patent/KR101378259B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP2038916A1 (en) | 2009-03-25 |
KR101378259B1 (ko) | 2014-03-25 |
EP2038916A4 (en) | 2011-04-13 |
TWI375264B (en) | 2012-10-21 |
SG172740A1 (en) | 2011-07-28 |
WO2008005164A1 (en) | 2008-01-10 |
IL195699A0 (en) | 2009-09-01 |
KR20090024195A (ko) | 2009-03-06 |
MY151925A (en) | 2014-07-31 |
CN101479836A (zh) | 2009-07-08 |
TW200807533A (en) | 2008-02-01 |
JP2009543337A (ja) | 2009-12-03 |
US20080220610A1 (en) | 2008-09-11 |
IL195699A (en) | 2014-08-31 |
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