JP2009545159A - 除去速度の高い誘電体膜のためのｃｍｐ組成物 - Google Patents

除去速度の高い誘電体膜のためのｃｍｐ組成物 Download PDF

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Publication number
JP2009545159A
JP2009545159A JP2009521753A JP2009521753A JP2009545159A JP 2009545159 A JP2009545159 A JP 2009545159A JP 2009521753 A JP2009521753 A JP 2009521753A JP 2009521753 A JP2009521753 A JP 2009521753A JP 2009545159 A JP2009545159 A JP 2009545159A
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JP
Japan
Prior art keywords
polishing composition
silica
chemical mechanical
mechanical polishing
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009521753A
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English (en)
Japanese (ja)
Other versions
JP2009545159A5 (enExample
Inventor
バキャシー，ロバート
ベイヤー，ベンジャミン
チェン，チャン
チェンバレン，ジェフリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2009545159A publication Critical patent/JP2009545159A/ja
Publication of JP2009545159A5 publication Critical patent/JP2009545159A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009521753A 2006-07-24 2007-07-12 除去速度の高い誘電体膜のためのｃｍｐ組成物 Pending JP2009545159A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/491,612 US20080020680A1 (en) 2006-07-24 2006-07-24 Rate-enhanced CMP compositions for dielectric films
PCT/US2007/015872 WO2008013678A1 (en) 2006-07-24 2007-07-12 Rate-enhanced cmp compositions for dielectric films

Publications (2)

Publication Number Publication Date
JP2009545159A true JP2009545159A (ja) 2009-12-17
JP2009545159A5 JP2009545159A5 (enExample) 2010-08-26

Family

ID=38972027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009521753A Pending JP2009545159A (ja) 2006-07-24 2007-07-12 除去速度の高い誘電体膜のためのｃｍｐ組成物

Country Status (10)

Country Link
US (1) US20080020680A1 (enExample)
EP (1) EP2052049A4 (enExample)
JP (1) JP2009545159A (enExample)
KR (1) KR101325333B1 (enExample)
CN (2) CN101490203A (enExample)
IL (1) IL196220A (enExample)
MY (1) MY155014A (enExample)
SG (1) SG174001A1 (enExample)
TW (1) TWI462999B (enExample)
WO (1) WO2008013678A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176208A (ja) * 2010-02-25 2011-09-08 Fujifilm Corp 化学的機械的研磨液及び研磨方法
JP2013042131A (ja) * 2011-08-15 2013-02-28 Rohm & Haas Electronic Materials Cmp Holdings Inc タングステンをケミカルメカニカルポリッシングするための方法
WO2015005433A1 (ja) * 2013-07-11 2015-01-15 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
JP2016048777A (ja) * 2014-06-27 2016-04-07 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ケミカルメカニカルポリッシング組成物及びタングステン研磨法
JP2017025295A (ja) * 2015-07-15 2017-02-02 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法

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JP5403922B2 (ja) * 2008-02-26 2014-01-29 富士フイルム株式会社 研磨液および研磨方法
KR101247890B1 (ko) * 2008-09-19 2013-03-26 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전체를 위한 장벽 슬러리
JP2012510161A (ja) * 2008-11-26 2012-04-26 アプライド マテリアルズ インコーポレイテッド 化学機械研磨のための終点制御を伴う化学薬品および研磨剤粒子の二系統混合
CN102051126B (zh) * 2009-11-06 2014-11-05 安集微电子（上海）有限公司 一种用于钨化学机械抛光的抛光液
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
WO2017147891A1 (en) * 2016-03-04 2017-09-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate
WO2018058347A1 (en) * 2016-09-28 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds
JP6817896B2 (ja) * 2017-05-26 2021-01-20 株式会社荏原製作所 基板研磨装置および基板研磨方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

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JP2005045102A (ja) * 2003-07-24 2005-02-17 Shin Etsu Handotai Co Ltd ウエーハの研磨方法
JP2005101545A (ja) * 2003-08-05 2005-04-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 半導体層を研磨するための組成物
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176208A (ja) * 2010-02-25 2011-09-08 Fujifilm Corp 化学的機械的研磨液及び研磨方法
JP2013042131A (ja) * 2011-08-15 2013-02-28 Rohm & Haas Electronic Materials Cmp Holdings Inc タングステンをケミカルメカニカルポリッシングするための方法
WO2015005433A1 (ja) * 2013-07-11 2015-01-15 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
JPWO2015005433A1 (ja) * 2013-07-11 2017-03-02 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
JP2016048777A (ja) * 2014-06-27 2016-04-07 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ケミカルメカニカルポリッシング組成物及びタングステン研磨法
JP2017025295A (ja) * 2015-07-15 2017-02-02 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法

Also Published As

Publication number Publication date
TWI462999B (zh) 2014-12-01
EP2052049A4 (en) 2010-08-25
MY155014A (en) 2015-08-28
CN103937411A (zh) 2014-07-23
IL196220A (en) 2014-04-30
KR20090031589A (ko) 2009-03-26
SG174001A1 (en) 2011-09-29
IL196220A0 (en) 2009-09-22
EP2052049A1 (en) 2009-04-29
CN101490203A (zh) 2009-07-22
KR101325333B1 (ko) 2013-11-11
US20080020680A1 (en) 2008-01-24
WO2008013678A1 (en) 2008-01-31
TW200813202A (en) 2008-03-16

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