MY155014A - Rate-enhanced cmp compositions for dielectric films - Google Patents

Rate-enhanced cmp compositions for dielectric films

Info

Publication number
MY155014A
MY155014A MYPI20090320A MYPI20090320A MY155014A MY 155014 A MY155014 A MY 155014A MY PI20090320 A MYPI20090320 A MY PI20090320A MY PI20090320 A MYPI20090320 A MY PI20090320A MY 155014 A MY155014 A MY 155014A
Authority
MY
Malaysia
Prior art keywords
dielectric films
rate
cmp compositions
enhanced
polishing composition
Prior art date
Application number
MYPI20090320A
Other languages
English (en)
Inventor
Vacassy Robert
Bayer Benjamin
Chen Zhan
Chamberlain Jeffrey
Original Assignee
Cabot Microelectronics Corporations
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corporations filed Critical Cabot Microelectronics Corporations
Publication of MY155014A publication Critical patent/MY155014A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
MYPI20090320A 2006-07-24 2007-07-12 Rate-enhanced cmp compositions for dielectric films MY155014A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/491,612 US20080020680A1 (en) 2006-07-24 2006-07-24 Rate-enhanced CMP compositions for dielectric films

Publications (1)

Publication Number Publication Date
MY155014A true MY155014A (en) 2015-08-28

Family

ID=38972027

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20090320A MY155014A (en) 2006-07-24 2007-07-12 Rate-enhanced cmp compositions for dielectric films

Country Status (10)

Country Link
US (1) US20080020680A1 (enExample)
EP (1) EP2052049A4 (enExample)
JP (1) JP2009545159A (enExample)
KR (1) KR101325333B1 (enExample)
CN (2) CN101490203A (enExample)
IL (1) IL196220A (enExample)
MY (1) MY155014A (enExample)
SG (1) SG174001A1 (enExample)
TW (1) TWI462999B (enExample)
WO (1) WO2008013678A1 (enExample)

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JP5403922B2 (ja) * 2008-02-26 2014-01-29 富士フイルム株式会社 研磨液および研磨方法
KR101247890B1 (ko) * 2008-09-19 2013-03-26 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전체를 위한 장벽 슬러리
JP2012510161A (ja) * 2008-11-26 2012-04-26 アプライド マテリアルズ インコーポレイテッド 化学機械研磨のための終点制御を伴う化学薬品および研磨剤粒子の二系統混合
CN102051126B (zh) * 2009-11-06 2014-11-05 安集微电子（上海）有限公司 一种用于钨化学机械抛光的抛光液
JP5518523B2 (ja) * 2010-02-25 2014-06-11 富士フイルム株式会社 化学的機械的研磨液及び研磨方法
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
JP6691774B2 (ja) * 2013-07-11 2020-05-13 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
US9275899B2 (en) 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
JP6730859B2 (ja) * 2015-07-15 2020-07-29 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
WO2017147891A1 (en) * 2016-03-04 2017-09-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate
WO2018058347A1 (en) * 2016-09-28 2018-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds
JP6817896B2 (ja) * 2017-05-26 2021-01-20 株式会社荏原製作所 基板研磨装置および基板研磨方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

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Also Published As

Publication number Publication date
TWI462999B (zh) 2014-12-01
EP2052049A4 (en) 2010-08-25
CN103937411A (zh) 2014-07-23
IL196220A (en) 2014-04-30
KR20090031589A (ko) 2009-03-26
SG174001A1 (en) 2011-09-29
IL196220A0 (en) 2009-09-22
EP2052049A1 (en) 2009-04-29
CN101490203A (zh) 2009-07-22
KR101325333B1 (ko) 2013-11-11
JP2009545159A (ja) 2009-12-17
US20080020680A1 (en) 2008-01-24
WO2008013678A1 (en) 2008-01-31
TW200813202A (en) 2008-03-16

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