WO2009025383A1 - 研磨組成物 - Google Patents

研磨組成物 Download PDF

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Publication number
WO2009025383A1
WO2009025383A1 PCT/JP2008/065130 JP2008065130W WO2009025383A1 WO 2009025383 A1 WO2009025383 A1 WO 2009025383A1 JP 2008065130 W JP2008065130 W JP 2008065130W WO 2009025383 A1 WO2009025383 A1 WO 2009025383A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing composition
polishing
dishing
recesses
disclosed
Prior art date
Application number
PCT/JP2008/065130
Other languages
English (en)
French (fr)
Inventor
Hiroshi Nitta
Yoshiyuki Matsumura
Original Assignee
Nitta Haas Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Incorporated filed Critical Nitta Haas Incorporated
Priority to CN2008801040390A priority Critical patent/CN101878520A/zh
Priority to US12/733,309 priority patent/US20100207057A1/en
Priority to JP2009529087A priority patent/JPWO2009025383A1/ja
Publication of WO2009025383A1 publication Critical patent/WO2009025383A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　本発明の目的は、リセスおよびディッシングの発生を抑え、より研磨速度が高い研磨組成物を提供することである。本発明の研磨組成物は、金属膜、特に銅（Ｃｕ）膜に好適な研磨組成物であって、アンモニア、過酸化水素、アミノ酸およびアニオン系界面活性剤を含み、残部が水である。これらを含むことで、特に第２段階研磨で使用した際に、リセスおよびディッシングの発生を抑えることができる。
PCT/JP2008/065130 2007-08-23 2008-08-25 研磨組成物 WO2009025383A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801040390A CN101878520A (zh) 2007-08-23 2008-08-25 研磨组合物
US12/733,309 US20100207057A1 (en) 2007-08-23 2008-08-25 Polishing composition
JP2009529087A JPWO2009025383A1 (ja) 2007-08-23 2008-08-25 研磨組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007217672 2007-08-23
JP2007-217672 2007-08-23

Publications (1)

Publication Number Publication Date
WO2009025383A1 true WO2009025383A1 (ja) 2009-02-26

Family

ID=40378281

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065130 WO2009025383A1 (ja) 2007-08-23 2008-08-25 研磨組成物

Country Status (6)

Country Link
US (1) US20100207057A1 (ja)
JP (1) JPWO2009025383A1 (ja)
KR (1) KR20100065333A (ja)
CN (1) CN101878520A (ja)
TW (1) TW200916567A (ja)
WO (1) WO2009025383A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010004023A (ja) * 2008-05-22 2010-01-07 Jsr Corp 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体調製用キット
CN102211306A (zh) * 2010-04-08 2011-10-12 福吉米株式会社 表面露出铜和硅的晶片的抛光方法
JP2015028968A (ja) * 2013-07-30 2015-02-12 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体調製用キット
WO2018055985A1 (ja) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
JP2020019863A (ja) * 2018-07-31 2020-02-06 ニッタ・ハース株式会社 研磨用スラリー

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112519A1 (ja) * 2005-04-14 2006-10-26 Showa Denko K.K. 研磨組成物
CN102373014A (zh) * 2010-08-24 2012-03-14 安集微电子（上海）有限公司 一种化学机械抛光液
US20130217231A1 (en) * 2010-10-05 2013-08-22 Basf Se Chemical mechanical polishing (cmp) composition
JP2019520697A (ja) * 2016-04-27 2019-07-18 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ コバルト及び／又はコバルト合金を含む基板の研磨のための化学機械研磨（ｃｍｐ）組成物の使用方法
JP7057662B2 (ja) * 2017-12-26 2022-04-20 ニッタ・デュポン株式会社 研磨組成物、及び、研磨速度を調整する方法
KR102026250B1 (ko) * 2018-02-05 2019-09-27 에스케이실트론 주식회사 웨이퍼 연마 장치용 연마 패드 및 그의 제조방법
WO2023036720A1 (en) * 2021-09-07 2023-03-16 Merck Patent Gmbh Selective self-assembled monolayers via spin-coating method for use in dsa

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073548A (ja) * 2005-09-02 2007-03-22 Fujimi Inc 研磨方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4187497B2 (ja) * 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
EP1517972A4 (en) * 2002-06-07 2009-12-16 Showa Denko Kk METAL POLISHING COMPOSITION, POLISHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER USING THE POLISHING METHOD
US7368388B2 (en) * 2005-04-15 2008-05-06 Small Robert J Cerium oxide abrasives for chemical mechanical polishing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073548A (ja) * 2005-09-02 2007-03-22 Fujimi Inc 研磨方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010004023A (ja) * 2008-05-22 2010-01-07 Jsr Corp 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体調製用キット
CN102211306A (zh) * 2010-04-08 2011-10-12 福吉米株式会社 表面露出铜和硅的晶片的抛光方法
JP2011222715A (ja) * 2010-04-08 2011-11-04 Fujimi Inc 銅及びシリコンが表面に露出したウェーハの研磨方法
JP2015028968A (ja) * 2013-07-30 2015-02-12 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体調製用キット
WO2018055985A1 (ja) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
JPWO2018055985A1 (ja) * 2016-09-23 2019-07-11 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
JP2020019863A (ja) * 2018-07-31 2020-02-06 ニッタ・ハース株式会社 研磨用スラリー
JP7220532B2 (ja) 2018-07-31 2023-02-10 ニッタ・デュポン株式会社 研磨用スラリー

Also Published As

Publication number Publication date
JPWO2009025383A1 (ja) 2010-11-25
KR20100065333A (ko) 2010-06-16
CN101878520A (zh) 2010-11-03
US20100207057A1 (en) 2010-08-19
TW200916567A (en) 2009-04-16

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