IL196220A - Rate-enhanced cmp compositions for dielectric films - Google Patents

Rate-enhanced cmp compositions for dielectric films

Info

Publication number
IL196220A
IL196220A IL196220A IL19622008A IL196220A IL 196220 A IL196220 A IL 196220A IL 196220 A IL196220 A IL 196220A IL 19622008 A IL19622008 A IL 19622008A IL 196220 A IL196220 A IL 196220A
Authority
IL
Israel
Prior art keywords
polishing composition
silica
substrate
polishing
ppm
Prior art date
Application number
IL196220A
Other languages
English (en)
Hebrew (he)
Other versions
IL196220A0 (en
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of IL196220A0 publication Critical patent/IL196220A0/en
Publication of IL196220A publication Critical patent/IL196220A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IL196220A 2006-07-24 2008-12-25 Rate-enhanced cmp compositions for dielectric films IL196220A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/491,612 US20080020680A1 (en) 2006-07-24 2006-07-24 Rate-enhanced CMP compositions for dielectric films
PCT/US2007/015872 WO2008013678A1 (en) 2006-07-24 2007-07-12 Rate-enhanced cmp compositions for dielectric films

Publications (2)

Publication Number Publication Date
IL196220A0 IL196220A0 (en) 2009-09-22
IL196220A true IL196220A (en) 2014-04-30

Family

ID=38972027

Family Applications (1)

Application Number Title Priority Date Filing Date
IL196220A IL196220A (en) 2006-07-24 2008-12-25 Rate-enhanced cmp compositions for dielectric films

Country Status (10)

Country Link
US (1) US20080020680A1 (enExample)
EP (1) EP2052049A4 (enExample)
JP (1) JP2009545159A (enExample)
KR (1) KR101325333B1 (enExample)
CN (2) CN101490203A (enExample)
IL (1) IL196220A (enExample)
MY (1) MY155014A (enExample)
SG (1) SG174001A1 (enExample)
TW (1) TWI462999B (enExample)
WO (1) WO2008013678A1 (enExample)

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US20100130101A1 (en) * 2008-11-26 2010-05-27 Applied Materials, Inc. Two-line mixing of chemical and abrasive particles with endpoint control for chemical mechanical polishing
CN102051126B (zh) * 2009-11-06 2014-11-05 安集微电子（上海）有限公司 一种用于钨化学机械抛光的抛光液
JP5518523B2 (ja) * 2010-02-25 2014-06-11 富士フイルム株式会社 化学的機械的研磨液及び研磨方法
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
TW201518488A (zh) * 2013-07-11 2015-05-16 福吉米股份有限公司 研磨用組成物及其製造方法
US9275899B2 (en) * 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
US10570313B2 (en) 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
JP6730859B2 (ja) * 2015-07-15 2020-07-29 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法
WO2017147891A1 (en) * 2016-03-04 2017-09-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate
JP6955014B2 (ja) * 2016-09-28 2021-10-27 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨
JP6817896B2 (ja) * 2017-05-26 2021-01-20 株式会社荏原製作所 基板研磨装置および基板研磨方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7222750B2 (ja) * 2019-02-14 2023-02-15 ニッタ・デュポン株式会社 研磨用組成物
JP7862133B2 (ja) * 2019-06-17 2026-05-19 インテグリス・インコーポレーテッド 化学機械研磨組成物、リンス組成物、基材の化学機械研磨方法及び基材のリンス方法
US12291655B2 (en) * 2021-04-27 2025-05-06 DuPont Electronic Materials Holding, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

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Also Published As

Publication number Publication date
EP2052049A4 (en) 2010-08-25
KR20090031589A (ko) 2009-03-26
CN103937411A (zh) 2014-07-23
IL196220A0 (en) 2009-09-22
CN101490203A (zh) 2009-07-22
EP2052049A1 (en) 2009-04-29
US20080020680A1 (en) 2008-01-24
JP2009545159A (ja) 2009-12-17
KR101325333B1 (ko) 2013-11-11
TWI462999B (zh) 2014-12-01
SG174001A1 (en) 2011-09-29
WO2008013678A1 (en) 2008-01-31
TW200813202A (en) 2008-03-16
MY155014A (en) 2015-08-28

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