JP2000150435A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000150435A5 JP2000150435A5 JP1998317233A JP31723398A JP2000150435A5 JP 2000150435 A5 JP2000150435 A5 JP 2000150435A5 JP 1998317233 A JP1998317233 A JP 1998317233A JP 31723398 A JP31723398 A JP 31723398A JP 2000150435 A5 JP2000150435 A5 JP 2000150435A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- conductive film
- film
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 91
- 238000004519 manufacturing process Methods 0.000 claims 41
- 239000004065 semiconductor Substances 0.000 claims 40
- 229910052751 metal Inorganic materials 0.000 claims 29
- 239000002184 metal Substances 0.000 claims 29
- 239000003795 chemical substances by application Substances 0.000 claims 28
- 239000011241 protective layer Substances 0.000 claims 24
- 239000004020 conductor Substances 0.000 claims 16
- 238000000034 method Methods 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical class C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims 11
- 238000005530 etching Methods 0.000 claims 8
- 239000000203 mixture Substances 0.000 claims 7
- 150000007524 organic acids Chemical class 0.000 claims 6
- 239000006061 abrasive grain Substances 0.000 claims 5
- 239000007788 liquid Substances 0.000 claims 5
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims 4
- -1 BTA carboxylic acid Chemical class 0.000 claims 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims 4
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims 4
- 229920002125 Sokalan® Polymers 0.000 claims 4
- 150000003863 ammonium salts Chemical class 0.000 claims 4
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 claims 4
- 229910003480 inorganic solid Inorganic materials 0.000 claims 4
- 239000004584 polyacrylic acid Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 150000003852 triazoles Chemical class 0.000 claims 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 239000012964 benzotriazole Substances 0.000 claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 2
- 230000002378 acidificating effect Effects 0.000 claims 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims 1
- ADCUEPOHPCPMCE-UHFFFAOYSA-N 4-cyanobenzoic acid Chemical compound OC(=O)C1=CC=C(C#N)C=C1 ADCUEPOHPCPMCE-UHFFFAOYSA-N 0.000 claims 1
- 239000005711 Benzoic acid Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 claims 1
- TVWHNULVHGKJHS-UHFFFAOYSA-N Uric acid Natural products N1C(=O)NC(=O)C2NC(=O)NC21 TVWHNULVHGKJHS-UHFFFAOYSA-N 0.000 claims 1
- 239000001361 adipic acid Substances 0.000 claims 1
- 235000011037 adipic acid Nutrition 0.000 claims 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims 1
- 235000010233 benzoic acid Nutrition 0.000 claims 1
- 235000015165 citric acid Nutrition 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 239000001530 fumaric acid Substances 0.000 claims 1
- 235000011087 fumaric acid Nutrition 0.000 claims 1
- 239000003112 inhibitor Substances 0.000 claims 1
- 239000004310 lactic acid Substances 0.000 claims 1
- 235000014655 lactic acid Nutrition 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 239000001630 malic acid Substances 0.000 claims 1
- 235000011090 malic acid Nutrition 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000011975 tartaric acid Substances 0.000 claims 1
- 235000002906 tartaric acid Nutrition 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229940116269 uric acid Drugs 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31723398A JP4095731B2 (ja) | 1998-11-09 | 1998-11-09 | 半導体装置の製造方法及び半導体装置 |
| US09/361,989 US6326299B1 (en) | 1998-11-09 | 1999-07-28 | Method for manufacturing a semiconductor device |
| TW088117081A TW452877B (en) | 1998-11-09 | 1999-10-04 | Semiconductor device and manufacture thereof |
| KR1019990049144A KR100653797B1 (ko) | 1998-11-09 | 1999-11-08 | 반도체 장치의 제조 방법 |
| US09/978,068 US20020025605A1 (en) | 1998-11-09 | 2001-10-17 | Semiconductor device and method for manufacturing the same |
| US10/227,284 US6638854B2 (en) | 1998-11-09 | 2002-08-26 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31723398A JP4095731B2 (ja) | 1998-11-09 | 1998-11-09 | 半導体装置の製造方法及び半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000150435A JP2000150435A (ja) | 2000-05-30 |
| JP2000150435A5 true JP2000150435A5 (enExample) | 2005-04-07 |
| JP4095731B2 JP4095731B2 (ja) | 2008-06-04 |
Family
ID=18085974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31723398A Expired - Lifetime JP4095731B2 (ja) | 1998-11-09 | 1998-11-09 | 半導体装置の製造方法及び半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6326299B1 (enExample) |
| JP (1) | JP4095731B2 (enExample) |
| KR (1) | KR100653797B1 (enExample) |
| TW (1) | TW452877B (enExample) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU5445899A (en) | 1998-08-31 | 2000-03-21 | Hitachi Chemical Company, Ltd. | Abrasive liquid for metal and method for polishing |
| US6936531B2 (en) | 1998-12-21 | 2005-08-30 | Megic Corporation | Process of fabricating a chip structure |
| WO2000039843A1 (en) * | 1998-12-25 | 2000-07-06 | Hitachi Chemical Company, Ltd. | Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate |
| JP2000311876A (ja) * | 1999-04-27 | 2000-11-07 | Hitachi Ltd | 配線基板の製造方法および製造装置 |
| JP3760064B2 (ja) * | 1999-08-09 | 2006-03-29 | 株式会社日立製作所 | 半導体装置の製造方法及び半導体装置の平坦化加工装置 |
| JP4554011B2 (ja) | 1999-08-10 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| TW501197B (en) * | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
| US6635943B1 (en) * | 1999-11-30 | 2003-10-21 | Advanced Micro Devices, Inc. | Method and system for reducing charge gain and charge loss in interlayer dielectric formation |
| JP2001185651A (ja) * | 1999-12-27 | 2001-07-06 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
| JP4854118B2 (ja) * | 2000-01-18 | 2012-01-18 | アプライド マテリアルズ インコーポレイテッド | ２段階化学機械的研磨プロセスにおける光学的監視方法 |
| JP2001345297A (ja) * | 2000-05-30 | 2001-12-14 | Hitachi Ltd | 半導体集積回路装置の製造方法及び研磨装置 |
| JP2002050595A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 研磨方法、配線形成方法及び半導体装置の製造方法 |
| US6936541B2 (en) * | 2000-09-20 | 2005-08-30 | Rohn And Haas Electronic Materials Cmp Holdings, Inc. | Method for planarizing metal interconnects |
| US6605537B2 (en) | 2000-10-27 | 2003-08-12 | Rodel Holdings, Inc. | Polishing of metal substrates |
| US20020042199A1 (en) * | 2000-09-20 | 2002-04-11 | Jinru Bian | Polishing by CMP for optimized planarization |
| US6649523B2 (en) * | 2000-09-29 | 2003-11-18 | Nutool, Inc. | Method and system to provide material removal and planarization employing a reactive pad |
| JP2002151451A (ja) * | 2000-11-14 | 2002-05-24 | Jsr Corp | 研磨速度比の調整方法ならびに化学機械研磨用水系分散体およびこの化学機械研磨用水系分散体を用いた半導体装置の製造方法 |
| US6478659B2 (en) * | 2000-12-13 | 2002-11-12 | Promos Technologies, Inc. | Chemical mechanical polishing method for slurry free fixed abrasive pads |
| US6566242B1 (en) * | 2001-03-23 | 2003-05-20 | International Business Machines Corporation | Dual damascene copper interconnect to a damascene tungsten wiring level |
| US6632259B2 (en) * | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| JP2002367996A (ja) * | 2001-06-06 | 2002-12-20 | Nec Corp | 半導体装置の製造方法 |
| JP2002368084A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6589099B2 (en) * | 2001-07-09 | 2003-07-08 | Motorola, Inc. | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry |
| JP2003051481A (ja) * | 2001-08-07 | 2003-02-21 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP2003077921A (ja) * | 2001-09-04 | 2003-03-14 | Nec Corp | 半導体装置の製造方法 |
| US7932603B2 (en) | 2001-12-13 | 2011-04-26 | Megica Corporation | Chip structure and process for forming the same |
| DE60320227T2 (de) * | 2002-02-20 | 2009-05-20 | Ebara Corp. | Verfahren und einrichtung zum polieren |
| TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| JP2004039867A (ja) * | 2002-07-03 | 2004-02-05 | Sony Corp | 多層配線回路モジュール及びその製造方法 |
| WO2004025720A1 (en) * | 2002-09-13 | 2004-03-25 | Koninklijke Philips Electronics N.V. | Manufacturing an ic |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| JP4267331B2 (ja) * | 2003-01-14 | 2009-05-27 | 株式会社荏原製作所 | 基板の処理方法及びエッチング液 |
| US6756309B1 (en) * | 2003-01-30 | 2004-06-29 | Taiwan Semiconductor Manufacturing Co., Ltd | Feed forward process control method for adjusting metal line Rs |
| US7709387B2 (en) * | 2003-02-11 | 2010-05-04 | Nxp B.V. | Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US7300480B2 (en) | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
| US7241725B2 (en) * | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
| US20050097825A1 (en) * | 2003-11-06 | 2005-05-12 | Jinru Bian | Compositions and methods for a barrier removal |
| US7497967B2 (en) * | 2004-03-24 | 2009-03-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Compositions and methods for polishing copper |
| US7384871B2 (en) * | 2004-07-01 | 2008-06-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| US7303993B2 (en) * | 2004-07-01 | 2007-12-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| KR100672940B1 (ko) | 2004-08-03 | 2007-01-24 | 삼성전자주식회사 | 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법 |
| JP2006049912A (ja) * | 2004-08-03 | 2006-02-16 | Samsung Electronics Co Ltd | Ｃｍｐスラリー、前記ｃｍｐスラリーを使用する化学機械的研磨方法、及び前記ｃｍｐスラリーを使用する金属配線の形成方法 |
| JP2006066851A (ja) * | 2004-08-30 | 2006-03-09 | Matsumura Sekiyu Kenkyusho:Kk | 化学的機械研磨用組成物 |
| US20060070979A1 (en) * | 2004-09-17 | 2006-04-06 | Christenson Kurt K | Using ozone to process wafer like objects |
| US7086935B2 (en) * | 2004-11-24 | 2006-08-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cellulose-containing polishing compositions and methods relating thereto |
| US7435356B2 (en) * | 2004-11-24 | 2008-10-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Abrasive-free chemical mechanical polishing compositions and methods relating thereto |
| TWI421931B (zh) * | 2005-04-28 | 2014-01-01 | Advanced Tech Materials | 用於銅薄膜平坦化製程中之化學機械研磨組成物之鈍化方法 |
| JP2007066990A (ja) * | 2005-08-29 | 2007-03-15 | Fujifilm Holdings Corp | 研磨液及びそれを用いる研磨方法 |
| US20070209287A1 (en) * | 2006-03-13 | 2007-09-13 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
| FR2900587B1 (fr) * | 2006-05-02 | 2008-12-26 | Kemesys | Procede de polissage mecano-chimique (cmp) en continu d'un materiau multicouche |
| US20080152812A1 (en) * | 2006-12-22 | 2008-06-26 | Ming Fang | Methods of corrosion prevention and cleaning of copper structures |
| US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
| JP5115573B2 (ja) * | 2010-03-03 | 2013-01-09 | オムロン株式会社 | 接続用パッドの製造方法 |
| US8575000B2 (en) * | 2011-07-19 | 2013-11-05 | SanDisk Technologies, Inc. | Copper interconnects separated by air gaps and method of making thereof |
| US9099396B2 (en) * | 2011-11-08 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-passivation interconnect structure and method of forming the same |
| WO2013161095A1 (ja) * | 2012-04-26 | 2013-10-31 | 東レ株式会社 | 凹凸構造を有する結晶基板の製造方法 |
| KR101965256B1 (ko) * | 2012-10-17 | 2019-04-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| US9962801B2 (en) | 2014-01-07 | 2018-05-08 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for performing chemical mechanical planarization |
| JP6321579B2 (ja) * | 2015-06-01 | 2018-05-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム |
| JP2019165088A (ja) * | 2018-03-19 | 2019-09-26 | 東芝メモリ株式会社 | 半導体装置およびその製造方法 |
| JP2020017668A (ja) * | 2018-07-26 | 2020-01-30 | キオクシア株式会社 | 半導体装置の製造方法 |
| US10692732B2 (en) * | 2018-09-21 | 2020-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP slurry and CMP method |
| CN116811043A (zh) * | 2023-07-05 | 2023-09-29 | 北京晶格领域半导体有限公司 | 一种p型碳化硅晶片及其加工方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4944836A (en) | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| FR2630588A1 (fr) | 1988-04-22 | 1989-10-27 | Philips Nv | Procede pour realiser une configuration d'interconnexion sur un dispositif semiconducteur notamment un circuit a densite d'integration elevee |
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| JP2934353B2 (ja) * | 1992-06-24 | 1999-08-16 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US5397741A (en) * | 1993-03-29 | 1995-03-14 | International Business Machines Corporation | Process for metallized vias in polyimide |
| US5380546A (en) * | 1993-06-09 | 1995-01-10 | Microelectronics And Computer Technology Corporation | Multilevel metallization process for electronic components |
| JP3297220B2 (ja) | 1993-10-29 | 2002-07-02 | 株式会社東芝 | 半導体装置の製造方法および半導体装置 |
| JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| JP3487051B2 (ja) | 1995-12-15 | 2004-01-13 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US6100196A (en) * | 1996-04-08 | 2000-08-08 | Chartered Semiconductor Manufacturing Ltd. | Method of making a copper interconnect with top barrier layer |
| JP3304754B2 (ja) | 1996-04-11 | 2002-07-22 | 三菱電機株式会社 | 集積回路の多段埋め込み配線構造 |
| US6093639A (en) * | 1996-10-30 | 2000-07-25 | United Microelectronics Corp. | Process for making contact plug |
| US5854140A (en) * | 1996-12-13 | 1998-12-29 | Siemens Aktiengesellschaft | Method of making an aluminum contact |
| KR100238220B1 (en) * | 1996-12-17 | 2000-01-15 | Samsung Electronics Co Ltd | Plattening method of semiconductor device |
| JP3160545B2 (ja) | 1997-01-28 | 2001-04-25 | 松下電器産業株式会社 | 埋め込み配線の形成方法 |
| TW319906B (en) * | 1997-06-02 | 1997-11-11 | Winbond Electronics Corp | Borderless via process |
| US6025264A (en) * | 1998-02-09 | 2000-02-15 | United Microelectronics Corp. | Fabricating method of a barrier layer |
| JP3374901B2 (ja) * | 1998-02-27 | 2003-02-10 | 日本電気株式会社 | 半導体装置 |
| US6143656A (en) * | 1998-10-22 | 2000-11-07 | Advanced Micro Devices, Inc. | Slurry for chemical mechanical polishing of copper |
| US6383928B1 (en) * | 1999-09-02 | 2002-05-07 | Texas Instruments Incorporated | Post copper CMP clean |
| US6350678B1 (en) * | 1999-09-17 | 2002-02-26 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing of semiconductors |
| US6380069B1 (en) * | 2000-01-14 | 2002-04-30 | United Microelectronics Corp. | Method of removing micro-scratch on metal layer |
| US6294472B1 (en) * | 2000-05-23 | 2001-09-25 | Advanced Micro Devices, Inc. | Dual slurry particle sizes for reducing microscratching of wafers |
| US6555477B1 (en) * | 2002-05-22 | 2003-04-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing Cu CMP corrosion |
-
1998
- 1998-11-09 JP JP31723398A patent/JP4095731B2/ja not_active Expired - Lifetime
-
1999
- 1999-07-28 US US09/361,989 patent/US6326299B1/en not_active Expired - Lifetime
- 1999-10-04 TW TW088117081A patent/TW452877B/zh active
- 1999-11-08 KR KR1019990049144A patent/KR100653797B1/ko not_active Expired - Fee Related
-
2001
- 2001-10-17 US US09/978,068 patent/US20020025605A1/en not_active Abandoned
-
2002
- 2002-08-26 US US10/227,284 patent/US6638854B2/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000150435A5 (enExample) | ||
| CN1849378B (zh) | 化学-机械抛光组合物及其使用方法 | |
| US7915071B2 (en) | Method for chemical mechanical planarization of chalcogenide materials | |
| US7300601B2 (en) | Passivative chemical mechanical polishing composition for copper film planarization | |
| US7153335B2 (en) | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole | |
| JP3686307B2 (ja) | 銅メタラジー用バリアまたはライナの化学機械平坦化 | |
| US9275899B2 (en) | Chemical mechanical polishing composition and method for polishing tungsten | |
| US20050215183A1 (en) | Chemical-mechanical planarization composition having PVNO and associated method for use | |
| US20090261291A1 (en) | Chemical-Mechanical Planarization Composition Having Benzenesulfonic Acid and Per-Compound Oxidizing Agents, and Associated Method for Use | |
| US20050076579A1 (en) | Bicine/tricine containing composition and method for chemical-mechanical planarization | |
| JP2000150435A (ja) | 半導体装置の製造方法及び半導体装置 | |
| US8841216B2 (en) | Method and composition for chemical mechanical planarization of a metal | |
| CA2335034A1 (en) | Chemical mechanical polishing slurry useful for copper/tantalum substrates | |
| JP2008546214A (ja) | 集積された化学機械研磨組成物および単一プラテン処理のためのプロセス | |
| US9163314B2 (en) | CMP slurry composition for tungsten | |
| JP2005167219A (ja) | バリヤ除去のための組成物及び方法 | |
| CN107109135A (zh) | 用于抛光铜线的cmp浆料组合物及使用其的抛光方法 | |
| US20070049025A1 (en) | Chemical-mechanical planarization composition having ketooxime compounds and associated method for use | |
| KR20190091263A (ko) | 상승된 온도 cmp 조성물 및 이의 사용 방법 | |
| US20070054495A1 (en) | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use | |
| US8697577B2 (en) | Method and composition for chemical mechanical planarization of a metal or a metal alloy | |
| KR101095615B1 (ko) | Ｃｍｐ 슬러리 | |
| KR100679551B1 (ko) | 금속용 연마액 및 연마방법 | |
| KR20110073352A (ko) | 구리 함유 기판의 화학 기계적 평탄화를 위한 방법 | |
| JP2017038070A (ja) | 研磨用組成物の製造方法 |