KR100653797B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR100653797B1
KR100653797B1 KR1019990049144A KR19990049144A KR100653797B1 KR 100653797 B1 KR100653797 B1 KR 100653797B1 KR 1019990049144 A KR1019990049144 A KR 1019990049144A KR 19990049144 A KR19990049144 A KR 19990049144A KR 100653797 B1 KR100653797 B1 KR 100653797B1
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South Korea
Prior art keywords
polishing
metal layer
abrasive
layer
rate
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Expired - Fee Related
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KR1019990049144A
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English (en)
Korean (ko)
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KR20000035287A (ko
Inventor
홈마요시오
곤도세이이찌
사꾸마노리유끼
오하시나오후미
이마이도시노리
야마구찌히즈루
오와다노부오
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가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20000035287A publication Critical patent/KR20000035287A/ko
Application granted granted Critical
Publication of KR100653797B1 publication Critical patent/KR100653797B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Semiconductor Memories (AREA)
KR1019990049144A 1998-11-09 1999-11-08 반도체 장치의 제조 방법 Expired - Fee Related KR100653797B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31723398A JP4095731B2 (ja) 1998-11-09 1998-11-09 半導体装置の製造方法及び半導体装置
JP1998-317233 1998-11-09

Publications (2)

Publication Number Publication Date
KR20000035287A KR20000035287A (ko) 2000-06-26
KR100653797B1 true KR100653797B1 (ko) 2006-12-05

Family

ID=18085974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990049144A Expired - Fee Related KR100653797B1 (ko) 1998-11-09 1999-11-08 반도체 장치의 제조 방법

Country Status (4)

Country Link
US (3) US6326299B1 (enExample)
JP (1) JP4095731B2 (enExample)
KR (1) KR100653797B1 (enExample)
TW (1) TW452877B (enExample)

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AU5445899A (en) 1998-08-31 2000-03-21 Hitachi Chemical Company, Ltd. Abrasive liquid for metal and method for polishing
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WO2000039843A1 (en) * 1998-12-25 2000-07-06 Hitachi Chemical Company, Ltd. Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate
JP2000311876A (ja) * 1999-04-27 2000-11-07 Hitachi Ltd 配線基板の製造方法および製造装置
JP3760064B2 (ja) * 1999-08-09 2006-03-29 株式会社日立製作所 半導体装置の製造方法及び半導体装置の平坦化加工装置
JP4554011B2 (ja) 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US6635943B1 (en) * 1999-11-30 2003-10-21 Advanced Micro Devices, Inc. Method and system for reducing charge gain and charge loss in interlayer dielectric formation
JP2001185651A (ja) * 1999-12-27 2001-07-06 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP4854118B2 (ja) * 2000-01-18 2012-01-18 アプライド マテリアルズ インコーポレイテッド ２段階化学機械的研磨プロセスにおける光学的監視方法
JP2001345297A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
US20020042199A1 (en) * 2000-09-20 2002-04-11 Jinru Bian Polishing by CMP for optimized planarization
US6649523B2 (en) * 2000-09-29 2003-11-18 Nutool, Inc. Method and system to provide material removal and planarization employing a reactive pad
JP2002151451A (ja) * 2000-11-14 2002-05-24 Jsr Corp 研磨速度比の調整方法ならびに化学機械研磨用水系分散体およびこの化学機械研磨用水系分散体を用いた半導体装置の製造方法
US6478659B2 (en) * 2000-12-13 2002-11-12 Promos Technologies, Inc. Chemical mechanical polishing method for slurry free fixed abrasive pads
US6566242B1 (en) * 2001-03-23 2003-05-20 International Business Machines Corporation Dual damascene copper interconnect to a damascene tungsten wiring level
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2002367996A (ja) * 2001-06-06 2002-12-20 Nec Corp 半導体装置の製造方法
JP2002368084A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体集積回路装置の製造方法
US6589099B2 (en) * 2001-07-09 2003-07-08 Motorola, Inc. Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry
JP2003051481A (ja) * 2001-08-07 2003-02-21 Hitachi Ltd 半導体集積回路装置の製造方法
JP2003077921A (ja) * 2001-09-04 2003-03-14 Nec Corp 半導体装置の製造方法
US7932603B2 (en) 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
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TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
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WO2004025720A1 (en) * 2002-09-13 2004-03-25 Koninklijke Philips Electronics N.V. Manufacturing an ic
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
JP4267331B2 (ja) * 2003-01-14 2009-05-27 株式会社荏原製作所 基板の処理方法及びエッチング液
US6756309B1 (en) * 2003-01-30 2004-06-29 Taiwan Semiconductor Manufacturing Co., Ltd Feed forward process control method for adjusting metal line Rs
US7709387B2 (en) * 2003-02-11 2010-05-04 Nxp B.V. Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US20050097825A1 (en) * 2003-11-06 2005-05-12 Jinru Bian Compositions and methods for a barrier removal
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
KR100672940B1 (ko) 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
JP2006049912A (ja) * 2004-08-03 2006-02-16 Samsung Electronics Co Ltd Ｃｍｐスラリー、前記ｃｍｐスラリーを使用する化学機械的研磨方法、及び前記ｃｍｐスラリーを使用する金属配線の形成方法
JP2006066851A (ja) * 2004-08-30 2006-03-09 Matsumura Sekiyu Kenkyusho:Kk 化学的機械研磨用組成物
US20060070979A1 (en) * 2004-09-17 2006-04-06 Christenson Kurt K Using ozone to process wafer like objects
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
TWI421931B (zh) * 2005-04-28 2014-01-01 Advanced Tech Materials 用於銅薄膜平坦化製程中之化學機械研磨組成物之鈍化方法
JP2007066990A (ja) * 2005-08-29 2007-03-15 Fujifilm Holdings Corp 研磨液及びそれを用いる研磨方法
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
FR2900587B1 (fr) * 2006-05-02 2008-12-26 Kemesys Procede de polissage mecano-chimique (cmp) en continu d'un materiau multicouche
US20080152812A1 (en) * 2006-12-22 2008-06-26 Ming Fang Methods of corrosion prevention and cleaning of copper structures
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
JP5115573B2 (ja) * 2010-03-03 2013-01-09 オムロン株式会社 接続用パッドの製造方法
US8575000B2 (en) * 2011-07-19 2013-11-05 SanDisk Technologies, Inc. Copper interconnects separated by air gaps and method of making thereof
US9099396B2 (en) * 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
WO2013161095A1 (ja) * 2012-04-26 2013-10-31 東レ株式会社 凹凸構造を有する結晶基板の製造方法
KR101965256B1 (ko) * 2012-10-17 2019-04-04 삼성디스플레이 주식회사 유기 발광 표시 장치
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JP6321579B2 (ja) * 2015-06-01 2018-05-09 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
JP2019165088A (ja) * 2018-03-19 2019-09-26 東芝メモリ株式会社 半導体装置およびその製造方法
JP2020017668A (ja) * 2018-07-26 2020-01-30 キオクシア株式会社 半導体装置の製造方法
US10692732B2 (en) * 2018-09-21 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. CMP slurry and CMP method
CN116811043A (zh) * 2023-07-05 2023-09-29 北京晶格领域半导体有限公司 一种p型碳化硅晶片及其加工方法

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JPH11251431A (ja) * 1998-02-27 1999-09-17 Nec Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US6638854B2 (en) 2003-10-28
US20030003713A1 (en) 2003-01-02
JP4095731B2 (ja) 2008-06-04
US20020025605A1 (en) 2002-02-28
TW452877B (en) 2001-09-01
US6326299B1 (en) 2001-12-04
JP2000150435A (ja) 2000-05-30
KR20000035287A (ko) 2000-06-26

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