JP4095731B2 - 半導体装置の製造方法及び半導体装置 - Google Patents

半導体装置の製造方法及び半導体装置 Download PDF

Info

Publication number
JP4095731B2
JP4095731B2 JP31723398A JP31723398A JP4095731B2 JP 4095731 B2 JP4095731 B2 JP 4095731B2 JP 31723398 A JP31723398 A JP 31723398A JP 31723398 A JP31723398 A JP 31723398A JP 4095731 B2 JP4095731 B2 JP 4095731B2
Authority
JP
Japan
Prior art keywords
polishing
metal layer
abrasive
acid
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP31723398A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000150435A (ja
JP2000150435A5 (enExample
Inventor
喜夫 本間
誠一 近藤
憲之 佐久間
直史 大橋
俊則 今井
日出 山口
伸郎 大和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP31723398A priority Critical patent/JP4095731B2/ja
Priority to US09/361,989 priority patent/US6326299B1/en
Priority to TW088117081A priority patent/TW452877B/zh
Priority to KR1019990049144A priority patent/KR100653797B1/ko
Publication of JP2000150435A publication Critical patent/JP2000150435A/ja
Priority to US09/978,068 priority patent/US20020025605A1/en
Priority to US10/227,284 priority patent/US6638854B2/en
Publication of JP2000150435A5 publication Critical patent/JP2000150435A5/ja
Application granted granted Critical
Publication of JP4095731B2 publication Critical patent/JP4095731B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Semiconductor Memories (AREA)
JP31723398A 1998-11-09 1998-11-09 半導体装置の製造方法及び半導体装置 Expired - Lifetime JP4095731B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP31723398A JP4095731B2 (ja) 1998-11-09 1998-11-09 半導体装置の製造方法及び半導体装置
US09/361,989 US6326299B1 (en) 1998-11-09 1999-07-28 Method for manufacturing a semiconductor device
TW088117081A TW452877B (en) 1998-11-09 1999-10-04 Semiconductor device and manufacture thereof
KR1019990049144A KR100653797B1 (ko) 1998-11-09 1999-11-08 반도체 장치의 제조 방법
US09/978,068 US20020025605A1 (en) 1998-11-09 2001-10-17 Semiconductor device and method for manufacturing the same
US10/227,284 US6638854B2 (en) 1998-11-09 2002-08-26 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31723398A JP4095731B2 (ja) 1998-11-09 1998-11-09 半導体装置の製造方法及び半導体装置

Publications (3)

Publication Number Publication Date
JP2000150435A JP2000150435A (ja) 2000-05-30
JP2000150435A5 JP2000150435A5 (enExample) 2005-04-07
JP4095731B2 true JP4095731B2 (ja) 2008-06-04

Family

ID=18085974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31723398A Expired - Lifetime JP4095731B2 (ja) 1998-11-09 1998-11-09 半導体装置の製造方法及び半導体装置

Country Status (4)

Country Link
US (3) US6326299B1 (enExample)
JP (1) JP4095731B2 (enExample)
KR (1) KR100653797B1 (enExample)
TW (1) TW452877B (enExample)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU5445899A (en) 1998-08-31 2000-03-21 Hitachi Chemical Company, Ltd. Abrasive liquid for metal and method for polishing
US6936531B2 (en) 1998-12-21 2005-08-30 Megic Corporation Process of fabricating a chip structure
WO2000039843A1 (en) * 1998-12-25 2000-07-06 Hitachi Chemical Company, Ltd. Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate
JP2000311876A (ja) * 1999-04-27 2000-11-07 Hitachi Ltd 配線基板の製造方法および製造装置
JP3760064B2 (ja) * 1999-08-09 2006-03-29 株式会社日立製作所 半導体装置の製造方法及び半導体装置の平坦化加工装置
JP4554011B2 (ja) 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US6635943B1 (en) * 1999-11-30 2003-10-21 Advanced Micro Devices, Inc. Method and system for reducing charge gain and charge loss in interlayer dielectric formation
JP2001185651A (ja) * 1999-12-27 2001-07-06 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP4854118B2 (ja) * 2000-01-18 2012-01-18 アプライド マテリアルズ インコーポレイテッド ２段階化学機械的研磨プロセスにおける光学的監視方法
JP2001345297A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
US20020042199A1 (en) * 2000-09-20 2002-04-11 Jinru Bian Polishing by CMP for optimized planarization
US6649523B2 (en) * 2000-09-29 2003-11-18 Nutool, Inc. Method and system to provide material removal and planarization employing a reactive pad
JP2002151451A (ja) * 2000-11-14 2002-05-24 Jsr Corp 研磨速度比の調整方法ならびに化学機械研磨用水系分散体およびこの化学機械研磨用水系分散体を用いた半導体装置の製造方法
US6478659B2 (en) * 2000-12-13 2002-11-12 Promos Technologies, Inc. Chemical mechanical polishing method for slurry free fixed abrasive pads
US6566242B1 (en) * 2001-03-23 2003-05-20 International Business Machines Corporation Dual damascene copper interconnect to a damascene tungsten wiring level
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2002367996A (ja) * 2001-06-06 2002-12-20 Nec Corp 半導体装置の製造方法
JP2002368084A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体集積回路装置の製造方法
US6589099B2 (en) * 2001-07-09 2003-07-08 Motorola, Inc. Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry
JP2003051481A (ja) * 2001-08-07 2003-02-21 Hitachi Ltd 半導体集積回路装置の製造方法
JP2003077921A (ja) * 2001-09-04 2003-03-14 Nec Corp 半導体装置の製造方法
US7932603B2 (en) 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
DE60320227T2 (de) * 2002-02-20 2009-05-20 Ebara Corp. Verfahren und einrichtung zum polieren
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
JP2004039867A (ja) * 2002-07-03 2004-02-05 Sony Corp 多層配線回路モジュール及びその製造方法
WO2004025720A1 (en) * 2002-09-13 2004-03-25 Koninklijke Philips Electronics N.V. Manufacturing an ic
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
JP4267331B2 (ja) * 2003-01-14 2009-05-27 株式会社荏原製作所 基板の処理方法及びエッチング液
US6756309B1 (en) * 2003-01-30 2004-06-29 Taiwan Semiconductor Manufacturing Co., Ltd Feed forward process control method for adjusting metal line Rs
US7709387B2 (en) * 2003-02-11 2010-05-04 Nxp B.V. Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US20050097825A1 (en) * 2003-11-06 2005-05-12 Jinru Bian Compositions and methods for a barrier removal
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
KR100672940B1 (ko) 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
JP2006049912A (ja) * 2004-08-03 2006-02-16 Samsung Electronics Co Ltd Ｃｍｐスラリー、前記ｃｍｐスラリーを使用する化学機械的研磨方法、及び前記ｃｍｐスラリーを使用する金属配線の形成方法
JP2006066851A (ja) * 2004-08-30 2006-03-09 Matsumura Sekiyu Kenkyusho:Kk 化学的機械研磨用組成物
US20060070979A1 (en) * 2004-09-17 2006-04-06 Christenson Kurt K Using ozone to process wafer like objects
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
TWI421931B (zh) * 2005-04-28 2014-01-01 Advanced Tech Materials 用於銅薄膜平坦化製程中之化學機械研磨組成物之鈍化方法
JP2007066990A (ja) * 2005-08-29 2007-03-15 Fujifilm Holdings Corp 研磨液及びそれを用いる研磨方法
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
FR2900587B1 (fr) * 2006-05-02 2008-12-26 Kemesys Procede de polissage mecano-chimique (cmp) en continu d'un materiau multicouche
US20080152812A1 (en) * 2006-12-22 2008-06-26 Ming Fang Methods of corrosion prevention and cleaning of copper structures
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
JP5115573B2 (ja) * 2010-03-03 2013-01-09 オムロン株式会社 接続用パッドの製造方法
US8575000B2 (en) * 2011-07-19 2013-11-05 SanDisk Technologies, Inc. Copper interconnects separated by air gaps and method of making thereof
US9099396B2 (en) * 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
WO2013161095A1 (ja) * 2012-04-26 2013-10-31 東レ株式会社 凹凸構造を有する結晶基板の製造方法
KR101965256B1 (ko) * 2012-10-17 2019-04-04 삼성디스플레이 주식회사 유기 발광 표시 장치
US9962801B2 (en) 2014-01-07 2018-05-08 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for performing chemical mechanical planarization
JP6321579B2 (ja) * 2015-06-01 2018-05-09 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
JP2019165088A (ja) * 2018-03-19 2019-09-26 東芝メモリ株式会社 半導体装置およびその製造方法
JP2020017668A (ja) * 2018-07-26 2020-01-30 キオクシア株式会社 半導体装置の製造方法
US10692732B2 (en) * 2018-09-21 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. CMP slurry and CMP method
CN116811043A (zh) * 2023-07-05 2023-09-29 北京晶格领域半导体有限公司 一种p型碳化硅晶片及其加工方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
FR2630588A1 (fr) 1988-04-22 1989-10-27 Philips Nv Procede pour realiser une configuration d'interconnexion sur un dispositif semiconducteur notamment un circuit a densite d'integration elevee
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP2934353B2 (ja) * 1992-06-24 1999-08-16 三菱電機株式会社 半導体装置およびその製造方法
US5397741A (en) * 1993-03-29 1995-03-14 International Business Machines Corporation Process for metallized vias in polyimide
US5380546A (en) * 1993-06-09 1995-01-10 Microelectronics And Computer Technology Corporation Multilevel metallization process for electronic components
JP3297220B2 (ja) 1993-10-29 2002-07-02 株式会社東芝 半導体装置の製造方法および半導体装置
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3487051B2 (ja) 1995-12-15 2004-01-13 松下電器産業株式会社 半導体装置の製造方法
US6100196A (en) * 1996-04-08 2000-08-08 Chartered Semiconductor Manufacturing Ltd. Method of making a copper interconnect with top barrier layer
JP3304754B2 (ja) 1996-04-11 2002-07-22 三菱電機株式会社 集積回路の多段埋め込み配線構造
US6093639A (en) * 1996-10-30 2000-07-25 United Microelectronics Corp. Process for making contact plug
US5854140A (en) * 1996-12-13 1998-12-29 Siemens Aktiengesellschaft Method of making an aluminum contact
KR100238220B1 (en) * 1996-12-17 2000-01-15 Samsung Electronics Co Ltd Plattening method of semiconductor device
JP3160545B2 (ja) 1997-01-28 2001-04-25 松下電器産業株式会社 埋め込み配線の形成方法
TW319906B (en) * 1997-06-02 1997-11-11 Winbond Electronics Corp Borderless via process
US6025264A (en) * 1998-02-09 2000-02-15 United Microelectronics Corp. Fabricating method of a barrier layer
JP3374901B2 (ja) * 1998-02-27 2003-02-10 日本電気株式会社 半導体装置
US6143656A (en) * 1998-10-22 2000-11-07 Advanced Micro Devices, Inc. Slurry for chemical mechanical polishing of copper
US6383928B1 (en) * 1999-09-02 2002-05-07 Texas Instruments Incorporated Post copper CMP clean
US6350678B1 (en) * 1999-09-17 2002-02-26 Advanced Micro Devices, Inc. Chemical-mechanical polishing of semiconductors
US6380069B1 (en) * 2000-01-14 2002-04-30 United Microelectronics Corp. Method of removing micro-scratch on metal layer
US6294472B1 (en) * 2000-05-23 2001-09-25 Advanced Micro Devices, Inc. Dual slurry particle sizes for reducing microscratching of wafers
US6555477B1 (en) * 2002-05-22 2003-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing Cu CMP corrosion

Also Published As

Publication number Publication date
US6638854B2 (en) 2003-10-28
US20030003713A1 (en) 2003-01-02
US20020025605A1 (en) 2002-02-28
TW452877B (en) 2001-09-01
US6326299B1 (en) 2001-12-04
JP2000150435A (ja) 2000-05-30
KR100653797B1 (ko) 2006-12-05
KR20000035287A (ko) 2000-06-26

Similar Documents

Publication Publication Date Title
JP4095731B2 (ja) 半導体装置の製造方法及び半導体装置
JP5472049B2 (ja) 化学機械研磨用研磨剤
US7104869B2 (en) Barrier removal at low polish pressure
Kondo et al. Abrasive‐Free Polishing for Copper Damascene Interconnection
US7915071B2 (en) Method for chemical mechanical planarization of chalcogenide materials
US6083840A (en) Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US7678605B2 (en) Method for chemical mechanical planarization of chalcogenide materials
KR100476484B1 (ko) 반도체장치형성방법
KR20030078002A (ko) 반도체 장치의 제조 방법
JP2005518669A (ja) 銅または銀の膜を研磨するための改良された化学機械的研磨スラリー
US20020061635A1 (en) Solution for chemical mechanical polishing and method of manufacturing copper metal interconnection layer using the same
KR101335946B1 (ko) 텅스텐 연마용 ｃｍｐ 슬러리 조성물
US20010013506A1 (en) Slurry and use thereof for polishing
TWI753987B (zh) 針對鎢的化學機械拋光方法
US20030022801A1 (en) Selective removal of tantalum-containing barrier layer during metal CMP title
WO2004030062A1 (ja) 研磨剤組成物、その製造方法及び研磨方法
KR100390204B1 (ko) 연마방법 및 연마액
JP2010108985A (ja) 研磨方法
JP4719204B2 (ja) 化学機械研磨用スラリおよび半導体装置の製造方法
US7731864B2 (en) Slurry for chemical mechanical polishing of aluminum
US20020125460A1 (en) Compositions for chemical mechanical planarization of tungsten
JP2006203188A (ja) 研磨組成物及び研磨方法
CN111378367A (zh) 一种化学机械抛光液
JP4684121B2 (ja) 化学機械研磨用研磨剤及び基板の研磨法
JP2006191132A (ja) 化学機械研磨用研磨剤及び基板の研磨法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040512

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040512

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20040512

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060406

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060815

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061013

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070320

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070517

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080226

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080310

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110314

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110314

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110314

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110314

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120314

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130314

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130314

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140314

Year of fee payment: 6

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term