TW452877B - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof Download PDF

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Publication number
TW452877B
TW452877B TW088117081A TW88117081A TW452877B TW 452877 B TW452877 B TW 452877B TW 088117081 A TW088117081 A TW 088117081A TW 88117081 A TW88117081 A TW 88117081A TW 452877 B TW452877 B TW 452877B
Authority
TW
Taiwan
Prior art keywords
honing
conductive film
film
agent
manufacturing
Prior art date
Application number
TW088117081A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshio Homma
Seiichi Kondo
Noriyuki Sakuma
Naofumi Ohashi
Toshinori Imai
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW452877B publication Critical patent/TW452877B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Semiconductor Memories (AREA)
TW088117081A 1998-11-09 1999-10-04 Semiconductor device and manufacture thereof TW452877B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31723398A JP4095731B2 (ja) 1998-11-09 1998-11-09 半導体装置の製造方法及び半導体装置

Publications (1)

Publication Number Publication Date
TW452877B true TW452877B (en) 2001-09-01

Family

ID=18085974

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088117081A TW452877B (en) 1998-11-09 1999-10-04 Semiconductor device and manufacture thereof

Country Status (4)

Country Link
US (3) US6326299B1 (enExample)
JP (1) JP4095731B2 (enExample)
KR (1) KR100653797B1 (enExample)
TW (1) TW452877B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7906422B2 (en) 1998-12-21 2011-03-15 Megica Corporation Chip structure and process for forming the same
US7915734B2 (en) 2001-12-13 2011-03-29 Megica Corporation Chip structure and process for forming the same
TWI585846B (zh) * 2015-06-01 2017-06-01 Hitachi Int Electric Inc A semiconductor device manufacturing method, a substrate processing system, a substrate processing apparatus, and a program

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JP2000311876A (ja) * 1999-04-27 2000-11-07 Hitachi Ltd 配線基板の製造方法および製造装置
JP3760064B2 (ja) * 1999-08-09 2006-03-29 株式会社日立製作所 半導体装置の製造方法及び半導体装置の平坦化加工装置
JP4554011B2 (ja) 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US6635943B1 (en) * 1999-11-30 2003-10-21 Advanced Micro Devices, Inc. Method and system for reducing charge gain and charge loss in interlayer dielectric formation
JP2001185651A (ja) * 1999-12-27 2001-07-06 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP4854118B2 (ja) * 2000-01-18 2012-01-18 アプライド マテリアルズ インコーポレイテッド ２段階化学機械的研磨プロセスにおける光学的監視方法
JP2001345297A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
US20020042199A1 (en) * 2000-09-20 2002-04-11 Jinru Bian Polishing by CMP for optimized planarization
US6649523B2 (en) * 2000-09-29 2003-11-18 Nutool, Inc. Method and system to provide material removal and planarization employing a reactive pad
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JP2002367996A (ja) * 2001-06-06 2002-12-20 Nec Corp 半導体装置の製造方法
JP2002368084A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体集積回路装置の製造方法
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JP2003051481A (ja) * 2001-08-07 2003-02-21 Hitachi Ltd 半導体集積回路装置の製造方法
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JP4267331B2 (ja) * 2003-01-14 2009-05-27 株式会社荏原製作所 基板の処理方法及びエッチング液
US6756309B1 (en) * 2003-01-30 2004-06-29 Taiwan Semiconductor Manufacturing Co., Ltd Feed forward process control method for adjusting metal line Rs
US7709387B2 (en) * 2003-02-11 2010-05-04 Nxp B.V. Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit
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US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US20050097825A1 (en) * 2003-11-06 2005-05-12 Jinru Bian Compositions and methods for a barrier removal
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
KR100672940B1 (ko) 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
JP2006049912A (ja) * 2004-08-03 2006-02-16 Samsung Electronics Co Ltd Ｃｍｐスラリー、前記ｃｍｐスラリーを使用する化学機械的研磨方法、及び前記ｃｍｐスラリーを使用する金属配線の形成方法
JP2006066851A (ja) * 2004-08-30 2006-03-09 Matsumura Sekiyu Kenkyusho:Kk 化学的機械研磨用組成物
US20060070979A1 (en) * 2004-09-17 2006-04-06 Christenson Kurt K Using ozone to process wafer like objects
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
TWI421931B (zh) * 2005-04-28 2014-01-01 Advanced Tech Materials 用於銅薄膜平坦化製程中之化學機械研磨組成物之鈍化方法
JP2007066990A (ja) * 2005-08-29 2007-03-15 Fujifilm Holdings Corp 研磨液及びそれを用いる研磨方法
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JP5115573B2 (ja) * 2010-03-03 2013-01-09 オムロン株式会社 接続用パッドの製造方法
US8575000B2 (en) * 2011-07-19 2013-11-05 SanDisk Technologies, Inc. Copper interconnects separated by air gaps and method of making thereof
US9099396B2 (en) * 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7906422B2 (en) 1998-12-21 2011-03-15 Megica Corporation Chip structure and process for forming the same
US7906849B2 (en) 1998-12-21 2011-03-15 Megica Corporation Chip structure and process for forming the same
US7915157B2 (en) 1998-12-21 2011-03-29 Megica Corporation Chip structure and process for forming the same
US7915734B2 (en) 2001-12-13 2011-03-29 Megica Corporation Chip structure and process for forming the same
US7919867B2 (en) 2001-12-13 2011-04-05 Megica Corporation Chip structure and process for forming the same
US7932603B2 (en) 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
US8008776B2 (en) 2001-12-13 2011-08-30 Megica Corporation Chip structure and process for forming the same
US8546947B2 (en) 2001-12-13 2013-10-01 Megica Corporation Chip structure and process for forming the same
TWI585846B (zh) * 2015-06-01 2017-06-01 Hitachi Int Electric Inc A semiconductor device manufacturing method, a substrate processing system, a substrate processing apparatus, and a program

Also Published As

Publication number Publication date
US6638854B2 (en) 2003-10-28
US20030003713A1 (en) 2003-01-02
JP4095731B2 (ja) 2008-06-04
US20020025605A1 (en) 2002-02-28
US6326299B1 (en) 2001-12-04
JP2000150435A (ja) 2000-05-30
KR100653797B1 (ko) 2006-12-05
KR20000035287A (ko) 2000-06-26

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