JP5472049B2 - 化学機械研磨用研磨剤 - Google Patents
化学機械研磨用研磨剤 Download PDFInfo
- Publication number
- JP5472049B2 JP5472049B2 JP2010255262A JP2010255262A JP5472049B2 JP 5472049 B2 JP5472049 B2 JP 5472049B2 JP 2010255262 A JP2010255262 A JP 2010255262A JP 2010255262 A JP2010255262 A JP 2010255262A JP 5472049 B2 JP5472049 B2 JP 5472049B2
- Authority
- JP
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- Prior art keywords
- polishing
- acid
- tantalum
- abrasive
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- 229910052715 tantalum Inorganic materials 0.000 claims description 32
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 32
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
(1)化学機械研磨用研磨剤の調製
表1に示すように、酸0.4重量%、砥粒(ただし例1は添加せず、例2〜9は1重量部、例10〜13は1重量%)、水溶性高分子0.05重量部(ただし例4,6,7のみ)、及び、保護膜形成剤(BTA)0.2重量%に、水(例1〜9では98.85重量部、例10〜13では97.9重量%)を加えて溶解し、さらに導体の酸化剤として過酸化水素水(試薬特級、30%水溶液)を加えて得られたものをCMP用研磨剤とした。なお、砥粒は、テトラエトキシシランのアンモニア溶液中での加水分解により作製した平均粒径20〜60nmのコロイダルシリカを添加した。また、使用したリンゴ酸及びグリコール酸のpKaはそれぞれ3.2である。
得られたCMP用研磨剤を用いてCMPを実施した。研磨条件はつぎの通りである。
基板:
厚さ200nmのタンタル膜を形成したシリコン基板
厚さ100nmの窒化タンタル膜を形成したシリコン基板
厚さ1μmの二酸化シリコン膜を形成したシリコン基板
厚さ1μmの銅膜を形成したシリコン基板
研磨パッド:独立気泡を持つ発泡ポリウレタン樹脂
研磨圧力:250gf/cm2
基板と研磨定盤との相対速度:18m/分
CMPを実施した研磨品につき、つぎの各項目について評価した。
CMPによる研磨速度:
膜のCMP前後での膜厚差を電気抵抗値から換算して求めた。
エッチング速度:
25℃、100rpmで攪拌した化学機械研磨用研磨剤への浸漬前後の銅層厚差を電気抵抗値から換算して求めた。
ディシング量:
二酸化シリコン中に深さ0.5μmの溝を形成して、公知のスパッタ法によってバリア層として厚さ50nmの窒化タンタル膜を形成し、同様にスパッタ法により銅膜を形成して公知の熱処理によって埋め込んだシリコン基板を基板として用いて2段研磨を行い、触針式段差計で配線金属部幅100μm、絶縁膜部幅100μmが交互に並んだストライプ状パターン部の表面形状から、絶縁膜部に対する配線金属部の膜減り量を求めた。銅用の1段目研磨剤としては、窒化タンタルに対する銅の研磨速度比が十分大きい銅及び銅合金用の研磨剤を使用して研磨した。1段研磨後に、絶縁膜部上にバリア層が露出した状態で測定したディシング量が、50nmになるように基板サンプルを作製し、絶縁膜部でバリア層がなくなるまで上記化学機械研磨用研磨剤を用いて2段研磨した。
シニング量:
上記ディシング量評価用基板に形成された配線金属部幅45μm、絶縁膜部幅5μmが交互に並んだ総幅2.5mmのストライプ状パターン部の表面形状を触針式段差計により測定し、ストライプ状パターン周辺の絶縁膜フィールド部に対するパターン中央付近の絶縁膜部の膜減り量を求めた。1段研磨後に、絶縁膜部上にバリア層が露出した状態で測定したシニング量が、20nmになるように基板サンプルを作製し、絶縁膜部でバリア層がなくなるまで上記化学機械研磨用研磨剤を用いて2段研磨した。
各例におけるCMPによる研磨速度を表2に示した。また、ディシング量及びシニング量を表3に示した。
Claims (6)
- 少なくともタンタル、タンタル合金及びタンタル化合物からなる群より選択される一種類以上のバリア層を研磨するための化学機械研磨用研磨剤であって、該化学機械研磨用研磨剤は、
導体の酸化剤と、
ベンゾトリアゾール及びその誘導体からなる群から選ばれる少なくとも1種の保護膜形成剤と、
マロン酸、リンゴ酸、酒石酸及びクエン酸からなる群から選ばれる少なくとも1種の有機酸と、
水溶性高分子と、
水とを含み、
前記水溶性高分子は、導体の酸化剤、有機酸、保護膜形成剤、水溶性高分子及び水の総量100gに対して、0.001〜0.5重量%含まれてなり、
pHが3以下であり、
前記酸化剤の濃度が0.01〜3重量%である化学機械研磨用研磨剤。 - 少なくともタンタル、タンタル合金及びタンタル化合物からなる群より選択される一種類以上のバリア層を研磨するための化学機械研磨用研磨剤であって、該化学機械研磨用研磨剤は、
導体の酸化剤と、
ベンゾトリアゾール及びその誘導体からなる群から選ばれる少なくとも1種の保護膜形成剤と、
マロン酸、リンゴ酸、酒石酸、グリコール酸及びクエン酸からなる群から選ばれる少なくとも1種の有機酸と、
水溶性高分子と、
水とを含み、
前記水溶性高分子は、導体の酸化剤、有機酸、保護膜形成剤、水溶性高分子及び水の総量100gに対して、0.001〜0.5重量%含まれてなり、
pHが3以下であり、
前記酸化剤の濃度が0.01〜3重量%である化学機械研磨用研磨剤(ただし、70〜95重量%の水性媒体と1〜25重量%の研磨剤と0.1〜20重量%の研磨促進剤とを含み、該研磨促進剤がモノカルボキシ基又はアミド基を有する化合物を含み、さらに酸化剤を1〜15重量%含む場合を除く。)。 - 前記水溶性高分子が、ポリアクリル酸、ポリアクリル酸塩、ポリメタクリル酸、ポリメタクリル酸塩、ポリアミド酸、ポリアミド酸塩、ポリアクリルアミド、ポリビニルアルコール及びポリビニルピロリドンからなる群から選ばれる少なくとも1種である請求項1又は2に記載の化学機械研磨用研磨剤。
- 前記保護膜形成剤がベンゾトリアゾールを含む請求項1〜3のいずれか1項に記載の化学機械研磨用研磨剤。
- 前記導体の酸化剤の濃度が0.01〜1.5重量%である請求項1、3及び4のいずれか1項に記載の化学機械研磨用研磨剤。
- 前記導体の酸化剤が、過酸化水素である請求項1〜5のいずれか1項に記載の化学機械研磨用研磨剤。
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2000
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TW501197B (en) | 2002-09-01 |
KR20020021408A (ko) | 2002-03-20 |
EP1211717B1 (en) | 2016-04-13 |
EP1211717A1 (en) | 2002-06-05 |
EP1211717A4 (en) | 2007-03-28 |
WO2001013417A1 (en) | 2001-02-22 |
CN101792655B (zh) | 2013-05-01 |
CN101792655A (zh) | 2010-08-04 |
JP2012182473A (ja) | 2012-09-20 |
AU6594200A (en) | 2001-03-13 |
US20060124597A1 (en) | 2006-06-15 |
JP2011082537A (ja) | 2011-04-21 |
KR100510977B1 (ko) | 2005-08-31 |
US7319072B2 (en) | 2008-01-15 |
US20060037251A1 (en) | 2006-02-23 |
US7744666B2 (en) | 2010-06-29 |
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