JP2007503115A5 - - Google Patents

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Publication number
JP2007503115A5
JP2007503115A5 JP2006523855A JP2006523855A JP2007503115A5 JP 2007503115 A5 JP2007503115 A5 JP 2007503115A5 JP 2006523855 A JP2006523855 A JP 2006523855A JP 2006523855 A JP2006523855 A JP 2006523855A JP 2007503115 A5 JP2007503115 A5 JP 2007503115A5
Authority
JP
Japan
Prior art keywords
aqueous composition
hydroxide
ammonium
composition
pyrrolidinone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006523855A
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English (en)
Japanese (ja)
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JP2007503115A (ja
JP4522408B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2004/024153 external-priority patent/WO2005019939A1/en
Publication of JP2007503115A publication Critical patent/JP2007503115A/ja
Publication of JP2007503115A5 publication Critical patent/JP2007503115A5/ja
Application granted granted Critical
Publication of JP4522408B2 publication Critical patent/JP4522408B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006523855A 2003-08-19 2004-07-26 マイクロエレクトロニクス用のストリッピングおよび洗浄組成物 Expired - Fee Related JP4522408B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49611003P 2003-08-19 2003-08-19
US54897604P 2004-03-01 2004-03-01
PCT/US2004/024153 WO2005019939A1 (en) 2003-08-19 2004-07-26 Stripping and cleaning compositions for microelectronics

Publications (3)

Publication Number Publication Date
JP2007503115A JP2007503115A (ja) 2007-02-15
JP2007503115A5 true JP2007503115A5 (enExample) 2007-09-13
JP4522408B2 JP4522408B2 (ja) 2010-08-11

Family

ID=34221393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006523855A Expired - Fee Related JP4522408B2 (ja) 2003-08-19 2004-07-26 マイクロエレクトロニクス用のストリッピングおよび洗浄組成物

Country Status (16)

Country Link
US (1) US7928046B2 (enExample)
EP (1) EP1664935B1 (enExample)
JP (1) JP4522408B2 (enExample)
KR (1) KR101056544B1 (enExample)
CN (1) CN1839355B (enExample)
AT (1) ATE376201T1 (enExample)
BR (1) BRPI0413657A (enExample)
CA (1) CA2536159A1 (enExample)
DE (1) DE602004009595T2 (enExample)
DK (1) DK1664935T3 (enExample)
ES (1) ES2293340T3 (enExample)
IL (1) IL173664A (enExample)
NO (1) NO20061247L (enExample)
PL (1) PL1664935T3 (enExample)
PT (1) PT1664935E (enExample)
WO (1) WO2005019939A1 (enExample)

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KR102545803B1 (ko) 2015-12-04 2023-06-20 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
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JP6798045B2 (ja) 2018-01-16 2020-12-09 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
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