JP2008541426A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008541426A5 JP2008541426A5 JP2008510018A JP2008510018A JP2008541426A5 JP 2008541426 A5 JP2008541426 A5 JP 2008541426A5 JP 2008510018 A JP2008510018 A JP 2008510018A JP 2008510018 A JP2008510018 A JP 2008510018A JP 2008541426 A5 JP2008541426 A5 JP 2008541426A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- water
- composition
- inorganic phosphorus
- organic solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002253 acid Substances 0.000 claims 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 14
- 229910052698 phosphorus Inorganic materials 0.000 claims 14
- 239000011574 phosphorus Substances 0.000 claims 14
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 239000003960 organic solvent Substances 0.000 claims 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 8
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims 6
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 4
- 238000004140 cleaning Methods 0.000 claims 4
- 238000005260 corrosion Methods 0.000 claims 4
- 230000007797 corrosion Effects 0.000 claims 4
- 239000003112 inhibitor Substances 0.000 claims 4
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 3
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims 2
- 150000001412 amines Chemical class 0.000 claims 2
- 239000002738 chelating agent Substances 0.000 claims 2
- 239000008139 complexing agent Substances 0.000 claims 2
- 239000004615 ingredient Substances 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 2
- 239000004094 surface-active agent Substances 0.000 claims 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims 1
- 150000002443 hydroxylamines Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67853405P | 2005-05-06 | 2005-05-06 | |
| PCT/US2006/014466 WO2006121580A2 (en) | 2005-05-06 | 2006-04-18 | Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008541426A JP2008541426A (ja) | 2008-11-20 |
| JP2008541426A5 true JP2008541426A5 (enExample) | 2009-06-04 |
Family
ID=36809154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008510018A Pending JP2008541426A (ja) | 2005-05-06 | 2006-04-18 | エッチングおよび灰化後のフォトレジスト残渣およびバルクのフォトレジストを除去するための組成物 |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US7754668B2 (enExample) |
| EP (1) | EP1883863B1 (enExample) |
| JP (1) | JP2008541426A (enExample) |
| KR (1) | KR20080005408A (enExample) |
| CN (1) | CN101171551B (enExample) |
| BR (1) | BRPI0611377A2 (enExample) |
| CA (1) | CA2606849A1 (enExample) |
| IL (1) | IL187121A (enExample) |
| MY (1) | MY144723A (enExample) |
| NO (1) | NO20075670L (enExample) |
| TW (1) | TWI425323B (enExample) |
| WO (1) | WO2006121580A2 (enExample) |
| ZA (1) | ZA200706853B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2912151B1 (fr) * | 2007-02-05 | 2009-05-08 | Arkema France | Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange |
| US20090148335A1 (en) * | 2007-02-28 | 2009-06-11 | Adair Richard E | Process for surface treatment of metals |
| US20110056516A1 (en) * | 2007-02-28 | 2011-03-10 | Adair Richard E | Process for surface treatment of metals |
| CN101373342B (zh) * | 2008-10-23 | 2011-03-02 | 江阴江化微电子材料股份有限公司 | 一种酸性剥离液及其制备方法 |
| US20110253171A1 (en) * | 2010-04-15 | 2011-10-20 | John Moore | Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication |
| US8921295B2 (en) | 2010-07-23 | 2014-12-30 | American Sterilizer Company | Biodegradable concentrated neutral detergent composition |
| EP3480288A1 (en) * | 2017-11-07 | 2019-05-08 | Henkel AG & Co. KGaA | Fluoride based cleaning composition |
| US20220243150A1 (en) * | 2019-06-19 | 2022-08-04 | Versum Materials Us, Llc | Cleaning Composition For Semiconductor Substrates |
| JP7692323B2 (ja) | 2021-09-24 | 2025-06-13 | 富士フイルム株式会社 | 薬液、処理方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3138557A (en) | 1961-09-05 | 1964-06-23 | Purex Corp Ltd | Composition and process for removal of coatings base on epoxy resins |
| TW416987B (en) | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
| JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
| JP3975301B2 (ja) * | 1997-08-22 | 2007-09-12 | 三菱瓦斯化学株式会社 | 半導体素子製造用洗浄液及びこれを用いた半導体素子 の製造方法 |
| JP2000208467A (ja) * | 1999-01-14 | 2000-07-28 | Mitsubishi Gas Chem Co Inc | 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法 |
| JP4224652B2 (ja) | 1999-03-08 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離液およびそれを用いたレジストの剥離方法 |
| JP2000284506A (ja) * | 1999-03-31 | 2000-10-13 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
| US6562726B1 (en) * | 1999-06-29 | 2003-05-13 | Micron Technology, Inc. | Acid blend for removing etch residue |
| US6486108B1 (en) | 2000-05-31 | 2002-11-26 | Micron Technology, Inc. | Cleaning composition useful in semiconductor integrated circuit fabrication |
| JP2002113431A (ja) * | 2000-10-10 | 2002-04-16 | Tokyo Electron Ltd | 洗浄方法 |
| MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| US6916772B2 (en) | 2001-07-13 | 2005-07-12 | Ekc Technology, Inc. | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
| JP2003177556A (ja) * | 2001-12-12 | 2003-06-27 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
| RS50930B (sr) * | 2002-06-07 | 2010-08-31 | Avantor Performance Materials Inc. | Kompozicije za mikroelektronsko čišćenje koje sadrže oksidatore i organske rastvarače |
| ES2310677T3 (es) | 2002-10-22 | 2009-01-16 | Ekc Technology, Inc. | Composiciones acuosas a base de acido fosforico para la limpieza de dispositivos semiconductores. |
| JP4085262B2 (ja) * | 2003-01-09 | 2008-05-14 | 三菱瓦斯化学株式会社 | レジスト剥離剤 |
| EP1638138A1 (en) * | 2003-06-04 | 2006-03-22 | Kao Corporation | Removing agent composition and removing/cleaning method using same |
-
2006
- 2006-04-18 KR KR1020077025627A patent/KR20080005408A/ko not_active Ceased
- 2006-04-18 EP EP06750494.4A patent/EP1883863B1/en not_active Not-in-force
- 2006-04-18 WO PCT/US2006/014466 patent/WO2006121580A2/en not_active Ceased
- 2006-04-18 US US11/911,346 patent/US7754668B2/en not_active Expired - Fee Related
- 2006-04-18 JP JP2008510018A patent/JP2008541426A/ja active Pending
- 2006-04-18 BR BRPI0611377-0A patent/BRPI0611377A2/pt not_active IP Right Cessation
- 2006-04-18 CA CA002606849A patent/CA2606849A1/en not_active Abandoned
- 2006-04-18 CN CN2006800155059A patent/CN101171551B/zh active Active
- 2006-05-03 MY MYPI20062030A patent/MY144723A/en unknown
- 2006-05-03 TW TW095115752A patent/TWI425323B/zh active
-
2007
- 2007-08-16 ZA ZA200706853A patent/ZA200706853B/xx unknown
- 2007-11-01 IL IL187121A patent/IL187121A/en not_active IP Right Cessation
- 2007-11-06 NO NO20075670A patent/NO20075670L/no not_active Application Discontinuation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6470239B2 (ja) | 洗浄配合物 | |
| JP4522408B2 (ja) | マイクロエレクトロニクス用のストリッピングおよび洗浄組成物 | |
| US10400167B2 (en) | Etching compositions and methods for using same | |
| JP5662365B2 (ja) | クリーニング調合物およびそのクリーニング調合物の使用方法 | |
| KR100857865B1 (ko) | 세정 제제 | |
| CN1982426B (zh) | 用于半导体晶片清洗的缓蚀剂体系 | |
| JP2007503115A5 (enExample) | ||
| JP6612891B2 (ja) | 洗浄配合 | |
| MXPA03003353A (es) | Composiciones alcalinas estabilizadas para limpiar substratos microelectronicos. | |
| CN102031204A (zh) | 清洗组合物、清洗方法、及半导体装置的制造方法 | |
| JP2004510204A (ja) | 芳香族酸阻害剤を含むフォトレジスト除去剤／洗浄液 | |
| WO2022221497A1 (en) | Cleaning composition | |
| JP2008541426A5 (enExample) | ||
| CN101384694A (zh) | 用于微电子基板的稳定的非水清洁组合物 | |
| JP5513181B2 (ja) | 洗浄組成物及び半導体装置の製造方法 | |
| TWI425323B (zh) | 用以移除後蝕刻及灰化之光阻劑殘餘物及總體光阻劑之組合物 | |
| JP2008252100A (ja) | 半導体エッチング残渣の除去剤及び洗浄剤 | |
| KR101880305B1 (ko) | 전자재료용 세정액 조성물 | |
| CN113201743A (zh) | 一种适用于电子器件的除锈剂及其制备方法 | |
| CN100529014C (zh) | 清洗半导体装置的磷酸组合物水溶液 | |
| TW200536936A (en) | Stripping and cleaning compositions for microelectronics | |
| TH84565A (th) | สารผสมสำหรับการนำออกของสิ่งตกค้างภายหลังการกัดสลักและสิ่งตกค้างโฟโตรีซีสท์ที่เป็นขึ้เถ้าและโฟโตรีซิสท์ที่พองฟู |