JP6470239B2 - 洗浄配合物 - Google Patents
洗浄配合物 Download PDFInfo
- Publication number
- JP6470239B2 JP6470239B2 JP2016185676A JP2016185676A JP6470239B2 JP 6470239 B2 JP6470239 B2 JP 6470239B2 JP 2016185676 A JP2016185676 A JP 2016185676A JP 2016185676 A JP2016185676 A JP 2016185676A JP 6470239 B2 JP6470239 B2 JP 6470239B2
- Authority
- JP
- Japan
- Prior art keywords
- ether
- composition
- acid
- glycol
- tolyltriazole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 title claims description 109
- 238000004140 cleaning Methods 0.000 title claims description 54
- 238000009472 formulation Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 52
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 30
- -1 amine compound Chemical class 0.000 claims description 27
- 238000005260 corrosion Methods 0.000 claims description 25
- 230000007797 corrosion Effects 0.000 claims description 25
- 239000003960 organic solvent Substances 0.000 claims description 22
- 239000003112 inhibitor Substances 0.000 claims description 20
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 17
- 229910017052 cobalt Inorganic materials 0.000 claims description 17
- 239000010941 cobalt Substances 0.000 claims description 17
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 150000007524 organic acids Chemical class 0.000 claims description 15
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 9
- UCFUJBVZSWTHEG-UHFFFAOYSA-N 4-(2-methylphenyl)-2h-triazole Chemical compound CC1=CC=CC=C1C1=CNN=N1 UCFUJBVZSWTHEG-UHFFFAOYSA-N 0.000 claims description 7
- XQHCBHNLRWLGQS-UHFFFAOYSA-N 4-(3-methylphenyl)-2h-triazole Chemical compound CC1=CC=CC(C2=NNN=C2)=C1 XQHCBHNLRWLGQS-UHFFFAOYSA-N 0.000 claims description 7
- ZPCIKQLLQORQCV-UHFFFAOYSA-N 4-(4-methylphenyl)-2h-triazole Chemical compound C1=CC(C)=CC=C1C1=NNN=C1 ZPCIKQLLQORQCV-UHFFFAOYSA-N 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 6
- 150000003335 secondary amines Chemical class 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 5
- 239000012964 benzotriazole Substances 0.000 claims description 5
- 150000003512 tertiary amines Chemical class 0.000 claims description 5
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N 1,1-dimethoxyethane Chemical compound COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 4
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 claims description 3
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 3
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 3
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims description 2
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 claims description 2
- RJLKIAGOYBARJG-UHFFFAOYSA-N 1,3-dimethylpiperidin-2-one Chemical compound CC1CCCN(C)C1=O RJLKIAGOYBARJG-UHFFFAOYSA-N 0.000 claims description 2
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 claims description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- NAFPAOUIKZHXDV-UHFFFAOYSA-N 1-propan-2-yloxy-2-(2-propan-2-yloxypropoxy)propane Chemical compound CC(C)OCC(C)OCC(C)OC(C)C NAFPAOUIKZHXDV-UHFFFAOYSA-N 0.000 claims description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- LJVNVNLFZQFJHU-UHFFFAOYSA-N 2-(2-phenylmethoxyethoxy)ethanol Chemical compound OCCOCCOCC1=CC=CC=C1 LJVNVNLFZQFJHU-UHFFFAOYSA-N 0.000 claims description 2
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 claims description 2
- HUFRRBHGGJPNGG-UHFFFAOYSA-N 2-(2-propan-2-yloxypropoxy)propan-1-ol Chemical compound CC(C)OC(C)COC(C)CO HUFRRBHGGJPNGG-UHFFFAOYSA-N 0.000 claims description 2
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 2
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 2
- PXPZSUXFHFQBPY-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]ethanol;2-methoxyethyl acetate Chemical compound COCCOC(C)=O.OCCOCCOCCO PXPZSUXFHFQBPY-UHFFFAOYSA-N 0.000 claims description 2
- YJTIFIMHZHDNQZ-UHFFFAOYSA-N 2-[2-(2-methylpropoxy)ethoxy]ethanol Chemical compound CC(C)COCCOCCO YJTIFIMHZHDNQZ-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 2
- VCCCOJNCORYLID-UHFFFAOYSA-N 2-methoxy-2-methylbutan-1-ol Chemical compound CCC(C)(CO)OC VCCCOJNCORYLID-UHFFFAOYSA-N 0.000 claims description 2
- IPUDBCXGMBSQGH-UHFFFAOYSA-N 2-methoxybutan-1-ol Chemical compound CCC(CO)OC IPUDBCXGMBSQGH-UHFFFAOYSA-N 0.000 claims description 2
- QGCDUBGOXJTXIU-UHFFFAOYSA-N 3-(2h-benzotriazol-4-yl)propane-1,1-diol Chemical compound OC(O)CCC1=CC=CC2=NNN=C12 QGCDUBGOXJTXIU-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- UTMDJGPRCLQPBT-UHFFFAOYSA-N 4-nitro-1h-1,2,3-benzotriazole Chemical compound [O-][N+](=O)C1=CC=CC2=NNN=C12 UTMDJGPRCLQPBT-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 150000001414 amino alcohols Chemical class 0.000 claims description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 2
- 229940043276 diisopropanolamine Drugs 0.000 claims description 2
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 2
- 150000003462 sulfoxides Chemical class 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
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- CSZZMFWKAQEMPB-UHFFFAOYSA-N 1-methoxybutan-2-ol Chemical compound CCC(O)COC CSZZMFWKAQEMPB-UHFFFAOYSA-N 0.000 claims 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims 1
- ZXKINMCYCKHYFR-UHFFFAOYSA-N aminooxidanide Chemical compound [O-]N ZXKINMCYCKHYFR-UHFFFAOYSA-N 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 16
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- 239000002253 acid Substances 0.000 description 6
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- 239000010937 tungsten Substances 0.000 description 3
- UIAFKZKHHVMJGS-UHFFFAOYSA-N 2,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1O UIAFKZKHHVMJGS-UHFFFAOYSA-N 0.000 description 2
- WXTMDXOMEHJXQO-UHFFFAOYSA-N 2,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC=C1O WXTMDXOMEHJXQO-UHFFFAOYSA-N 0.000 description 2
- YCCILVSKPBXVIP-UHFFFAOYSA-N 2-(4-hydroxyphenyl)ethanol Chemical compound OCCC1=CC=C(O)C=C1 YCCILVSKPBXVIP-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- WYMDDFRYORANCC-UHFFFAOYSA-N 2-[[3-[bis(carboxymethyl)amino]-2-hydroxypropyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)CN(CC(O)=O)CC(O)=O WYMDDFRYORANCC-UHFFFAOYSA-N 0.000 description 2
- ZDWPBMJZDNXTPG-UHFFFAOYSA-N 2h-benzotriazol-4-amine Chemical compound NC1=CC=CC2=C1NN=N2 ZDWPBMJZDNXTPG-UHFFFAOYSA-N 0.000 description 2
- YQUVCSBJEUQKSH-UHFFFAOYSA-N 3,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C(O)=C1 YQUVCSBJEUQKSH-UHFFFAOYSA-N 0.000 description 2
- UYEMGAFJOZZIFP-UHFFFAOYSA-N 3,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1 UYEMGAFJOZZIFP-UHFFFAOYSA-N 0.000 description 2
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
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- C—CHEMISTRY; METALLURGY
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
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- C—CHEMISTRY; METALLURGY
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- C11D2111/22—
Description
本特許出願は、2015年9月23日出願の米国仮特許出願第62/222259号の利益を主張し、これは参照することにより、本明細書に組み込まれる。
本発明の洗浄組成物は水性系であり、したがって、組成物の質量パーセントに対して、最大の成分として水を含む。本発明において、水は、例えば、組成物の1種又は複数種の固形成分を溶解させるような様々な方法で機能し、成分のキャリアとして、無機塩及び複合体の除去を容易にする目的として、組成物の粘度改質剤として、並びに希釈液として機能する。好ましくは、洗浄組成物で用いられる水は脱イオン(DI)水である。
本発明の洗浄組成物は、エチレンジアミンテトラ酢酸(EDTA)を含み、それは、コバルト金属(存在する場合)を腐食から保護するために主に機能する。任意の特定の理論によって拘束されることを意図せずに、EDTAは金属の表面と結合し、他の腐食剤によるアクセスを妨げて、それによって金属を保護すると考えられる。
本開示の洗浄組成物はまた、第2級又は第3級有機アミンを含む。第2級又は第3級有機アミンは、緩衝物の共役塩基成分を提供するために主に機能するだけでなく、緩衝物に必要とされるものの超過が存在する範囲では、洗浄作業中に有機残留物及びキレート金属と反応することができるため、洗浄成分としてもまた機能する。
本開示の洗浄組成物はまた、1種又は複数種の多官能性有機酸を含み、それは緩衝物の共役酸部分として主に機能する。本明細書で使用される場合、「多官能性有機酸」という用語は、限定されないが、(i)ジカルボン酸(例えば、マロン酸、リンゴ酸など)、芳香族部分を含むジカルボン酸(例えば、フタル酸など)、及びそれらの組み合わせ、並びに(ii)トリカルボン酸(例えば、クエン酸など)、芳香族部分を含むトリカルボン酸(例えば、トリメリット酸など)、及びそれらの組み合わせを含む、1つ又は複数のカルボキシレート基を有する酸又はマルチ酸(multi−acid)を言い表す。
本開示の洗浄組成物はまた、1種又は複数種のフッ化物イオン源を含む。フッ化物イオンは、基材から無機残留物を除去するのを助けるために主に機能する。本発明に係るフッ化物イオン源を与える好ましい化合物は、フッ化アンモニウム及びフッ化第4級アンモニウム、例えば、フッ化テトラメチルアンモニウム及びフッ化テトラブチルアンモニウムである。脂肪族第1級、第2級又は第3級アミンのフッ化物塩を使用することができる。そのようなアミンの例は、式R1NR2R3R4F(式中、R1、R2、R3及びR4は独立してH又は(C1−C4)アルキル基を示す)を有するアミンである。典型的に、R1、R2、R3及びR4基における炭素原子の総数は12個以下の炭素原子である。
本開示に係る組成物は、任意選択で、少なくとも1種の有機溶媒を含む。有機溶媒は、水と混ざることが好ましい。本発明の様々な実施形態において、基材上の金属ラインが、典型的に、水混和性の有機溶媒を使用するかどうかを決定する。例えば、アルミニウムラインが基材上に存在する場合、水及びハロゲン化物イオンの組み合わせは典型的にアルミニウムをエッチングする傾向がある。そのような実施形態において、水混和性有機溶媒の使用が、除外されない場合は、アルミニウムのエッチングを大きく減少することができる。
本開示の組成物は、任意選択で、少なくとも1種の腐食防止剤を含む。腐食防止剤は洗浄されるべき基材表面と反応するために与えられ、それは、表面を不動態化して洗浄中の過剰なエッチングを防止するために、金属(特に、銅)又は非金属であることができる。特に、任意の特定の理論に拘束されることなく、腐食防止剤は銅表面(又は他の金属表面)上に不溶性キレート化合物の被覆を形成して、したがって、フォトレジスト残留物除去成分と金属との間の接触を抑制して、それによって腐食を防止すると考えられる。
本発明の洗浄組成物としてはまた、1種又は複数種の以下の添加剤:界面活性剤、キレート剤、化学修飾剤、染料、殺生物剤、及びその他の添加剤を挙げることができる。1種又は複数種の添加剤は、それらが組成物のpH範囲に悪影響を与えない範囲で加えることができる。
以下の表1における配合物をレシピ(上のレシピ表を参照のこと)に基づいて成分を混合及びブレンドすることによって作って室温で撹拌した。金属エッチ速度を、1”テフロン(登録商標)撹拌子(stirbar)を用いて500rpmで、35℃と50℃の間の温度まで溶液を加熱したホットプレート上のビーカー中で測定した。ResMap4点プローブを用いて、金属(シリコンウエハ上のCu又はCo)のブランケットウエハをエッチ速度測定のために使用した。金属ブランケットの厚さを、化学薬品浸漬の前と後に測定して、膜の減少をプロセス時間(分)で割ることで、金属エッチ速度をオングストローム/分で得た。
Claims (16)
- 約55〜80wt%の水、
約0.3〜約5.0wt%のEDTA、
約10.0〜約30.0wt%の、第2級アミン、第3級アミン、及びそれらの混合物からなる群より選択されるアミン化合物、
約0.1〜約5.0wt%の多官能性有機酸、
約0.01〜約8.0wt%のフッ化物イオン源、
約0〜約60wt%の水混和性有機溶媒、並びに
約0〜約15wt%の腐食防止剤
を有効洗浄量で含む、コバルトを含む半導体基材から残留物を除去するための組成物。 - 前記アミン化合物が、トリエタノールアミン(TEA)、ジエタノールアミン、N−メチルジエタノールアミン、ジイソプロパノールアミン、N−メチルエタノールアミン、及びそれらの混合物からなる群より選択される、請求項1に記載の組成物。
- 前記多官能性有機酸が、マロン酸、リンゴ酸、フタル酸、クエン酸、トリメリット酸、及びそれらの組み合わせからなる群より選択される、請求項1に記載の組成物。
- 前記腐食防止剤が存在して、トリアゾール化合物である、請求項1に記載の組成物。
- 前記トリアゾール化合物が、ベンゾトリアゾール、o−トリルトリアゾール、m−トリルトリアゾール、p−トリルトリアゾール、カルボキシベンゾトリアゾール、1−ヒドロキシベンゾトリアゾール、ニトロベンゾトリアゾール、及びジヒドロキシプロピルベンゾトリアゾールからなる群より選択される、請求項4に記載の組成物。
- 前記トリアゾール化合物が、o−トリルトリアゾール、m−トリルトリアゾール、p−トリルトリアゾール、及びそれらの混合物からなる群より選択される、請求項5に記載の組成物。
- 前記水混和性有機溶媒が存在して、ジメチルアセトアミド(DMAC)、N−メチルピロリジノン(NMP)、ジメチルスルホキシド(DMSO)、ジメチルホルムアミド、N−メチルホルムアミド、ホルムアミド、ジメチル−2−ピペリドン(DMPD)、テトラヒドロフルフリルアルコール、グリセロール、エチレングリコール、アミド、アルコール、スルホキシド、ヒドロキシアミド、アミノアルコール、(C2−C20)アルカンジオール、(C3−C20)アルカントリオール、環式アルコール、プロピレングリコール、テトラヒドロフルフリルアルコール、ジアセトンアルコール、1,4−シクロヘキサンジメタノールからなる群より選択される、請求項1に記載の組成物。
- 前記水混和性有機溶媒が、DMSO、NMP、及びDMACからなる群より選択される、請求項7に記載の組成物。
- 前記水混和性有機溶媒が存在して、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノブチルエーテル、エチレングリコールジメチルエーテル、エチレングリコールジエチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノプロピルエーテル、ジエチレングリコールモノイソプロピルエーテル、ジエチレングリコールモノブチルエーテル、ジエチレングリコールモノイソブチルエーテル、ジエチレングリコールモノベンジルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、トリエチレングリコールモノメチルエーテル、トリエチレグリコールジメチルエーテル、ポリエチレングリコールモノメチルエーテル、ジエチレングリコールメチルエチルエーテル、トリエチレングリコールエチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、プロピレングリコールメチルエーテルアセテート、プロピレングリコールモノメチルエーテル、プロピレングリコールジメチルエーテル、プロピレングリコールモノブチルエーテル、プロピレングリコール、モノプロピルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノイソプロピルエーテル、ジプロピレンモノブチルエーテル、ジプロピレングリコールジイソプロピルエーテル、トリプロピレングリコールモノメチルエーテル、1−メトキシ−2−ブタノール、2−メトキシ−1−ブタノール、2−メトキシ−2−メチルブタノール、1,1−ジメトキシエタン、及び2−(2−ブトキシエトキシ)エタノールからなる群より選択されるグリコールエーテルである、請求項1に記載の組成物。
- 約60〜70wt%の水、
約0.3〜約3.5wt%のEDTA、
約20.0〜約30.0wt%の、第2級アミン、第3級アミン、及びそれらの混合物からなる群より選択されるアミン化合物、
約0.5〜約2.0wt%の多官能性有機酸、
約0.025〜約5.0wt%のフッ化物イオン源、
約20〜約40wt%の水混和性有機溶媒、並びに
約0.3〜約1.5wt%の、o−トリルトリアゾール、m−トリルトリアゾール、p−トリルトリアゾール、及びそれらの混合物からなる群より選択される腐食防止剤
を含む、請求項1に記載の組成物。 - コバルト金属及び任意選択でアルミニウムを含む基材から残留物を除去するための方法であって、
前記基材を、請求項1〜10のいずれか1項に記載の組成物と接触させる工程と、
前記基材を水でリンスする工程と、
前記基材を乾燥する工程と
を含み、前記基材を水でリンスする工程の前に中間IPAリンス工程を除外する方法。 - 前記基材が半導体基材である、請求項11に記載の方法。
- 前記基材が、アルミニウムを含む、請求項12に記載の方法。
- 前記組成物が、4Å/分以下のコバルト金属エッチ速度を提供することによって前記コバルト金属を保護する、請求項13に記載の方法。
- 前記組成物が、3Å/分以下のコバルト金属エッチ速度を提供することによって前記コバルト金属を保護する、請求項14に記載の方法。
- 前記組成物が、2Å/分以下のコバルト金属エッチ速度を提供することによって前記コバルト金属を保護する、請求項15に記載の方法。
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