CN114940926A - 清洁制剂 - Google Patents
清洁制剂 Download PDFInfo
- Publication number
- CN114940926A CN114940926A CN202210709283.1A CN202210709283A CN114940926A CN 114940926 A CN114940926 A CN 114940926A CN 202210709283 A CN202210709283 A CN 202210709283A CN 114940926 A CN114940926 A CN 114940926A
- Authority
- CN
- China
- Prior art keywords
- ether
- composition
- weight percent
- acid
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title description 3
- 239000000203 mixture Substances 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 65
- -1 amine compound Chemical class 0.000 claims abstract description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000005260 corrosion Methods 0.000 claims abstract description 30
- 230000007797 corrosion Effects 0.000 claims abstract description 30
- 239000003960 organic solvent Substances 0.000 claims abstract description 27
- 239000003112 inhibitor Substances 0.000 claims abstract description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 21
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000007524 organic acids Chemical class 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 150000003335 secondary amines Chemical class 0.000 claims abstract description 10
- 150000003512 tertiary amines Chemical class 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 35
- 229910017052 cobalt Inorganic materials 0.000 claims description 23
- 239000010941 cobalt Substances 0.000 claims description 23
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 23
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- UCFUJBVZSWTHEG-UHFFFAOYSA-N 4-(2-methylphenyl)-2h-triazole Chemical compound CC1=CC=CC=C1C1=CNN=N1 UCFUJBVZSWTHEG-UHFFFAOYSA-N 0.000 claims description 10
- XQHCBHNLRWLGQS-UHFFFAOYSA-N 4-(3-methylphenyl)-2h-triazole Chemical compound CC1=CC=CC(C2=NNN=C2)=C1 XQHCBHNLRWLGQS-UHFFFAOYSA-N 0.000 claims description 10
- ZPCIKQLLQORQCV-UHFFFAOYSA-N 4-(4-methylphenyl)-2h-triazole Chemical compound C1=CC(C)=CC=C1C1=NNN=C1 ZPCIKQLLQORQCV-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 9
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 9
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 8
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 8
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 7
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 7
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 6
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 6
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 6
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 6
- 239000012964 benzotriazole Substances 0.000 claims description 6
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 6
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 6
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 5
- 150000001298 alcohols Chemical class 0.000 claims description 5
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 claims description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 4
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 4
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims description 3
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 claims description 3
- RJLKIAGOYBARJG-UHFFFAOYSA-N 1,3-dimethylpiperidin-2-one Chemical compound CC1CCCN(C)C1=O RJLKIAGOYBARJG-UHFFFAOYSA-N 0.000 claims description 3
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 3
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 claims description 3
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 3
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 3
- CSZZMFWKAQEMPB-UHFFFAOYSA-N 1-methoxybutan-2-ol Chemical compound CCC(O)COC CSZZMFWKAQEMPB-UHFFFAOYSA-N 0.000 claims description 3
- NAFPAOUIKZHXDV-UHFFFAOYSA-N 1-propan-2-yloxy-2-(2-propan-2-yloxypropoxy)propane Chemical compound CC(C)OCC(C)OCC(C)OC(C)C NAFPAOUIKZHXDV-UHFFFAOYSA-N 0.000 claims description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- LJVNVNLFZQFJHU-UHFFFAOYSA-N 2-(2-phenylmethoxyethoxy)ethanol Chemical compound OCCOCCOCC1=CC=CC=C1 LJVNVNLFZQFJHU-UHFFFAOYSA-N 0.000 claims description 3
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 claims description 3
- HUFRRBHGGJPNGG-UHFFFAOYSA-N 2-(2-propan-2-yloxypropoxy)propan-1-ol Chemical compound CC(C)OC(C)COC(C)CO HUFRRBHGGJPNGG-UHFFFAOYSA-N 0.000 claims description 3
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 3
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 3
- SDHQGBWMLCBNSM-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]ethyl acetate Chemical compound COCCOCCOCCOC(C)=O SDHQGBWMLCBNSM-UHFFFAOYSA-N 0.000 claims description 3
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 3
- YJTIFIMHZHDNQZ-UHFFFAOYSA-N 2-[2-(2-methylpropoxy)ethoxy]ethanol Chemical compound CC(C)COCCOCCO YJTIFIMHZHDNQZ-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 3
- VCCCOJNCORYLID-UHFFFAOYSA-N 2-methoxy-2-methylbutan-1-ol Chemical compound CCC(C)(CO)OC VCCCOJNCORYLID-UHFFFAOYSA-N 0.000 claims description 3
- IPUDBCXGMBSQGH-UHFFFAOYSA-N 2-methoxybutan-1-ol Chemical compound CCC(CO)OC IPUDBCXGMBSQGH-UHFFFAOYSA-N 0.000 claims description 3
- QGCDUBGOXJTXIU-UHFFFAOYSA-N 3-(2h-benzotriazol-4-yl)propane-1,1-diol Chemical compound OC(O)CCC1=CC=CC2=NNN=C12 QGCDUBGOXJTXIU-UHFFFAOYSA-N 0.000 claims description 3
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 3
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 claims description 3
- UTMDJGPRCLQPBT-UHFFFAOYSA-N 4-nitro-1h-1,2,3-benzotriazole Chemical compound [O-][N+](=O)C1=CC=CC2=NNN=C12 UTMDJGPRCLQPBT-UHFFFAOYSA-N 0.000 claims description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 150000001414 amino alcohols Chemical class 0.000 claims description 3
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 3
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 3
- 229940043276 diisopropanolamine Drugs 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- 150000003462 sulfoxides Chemical class 0.000 claims description 3
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 3
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- 239000010408 film Substances 0.000 description 21
- 239000010949 copper Substances 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 8
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 6
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 5
- 238000004380 ashing Methods 0.000 description 5
- 239000000872 buffer Substances 0.000 description 5
- 239000002738 chelating agent Substances 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229940074391 gallic acid Drugs 0.000 description 3
- 235000004515 gallic acid Nutrition 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229940093915 gynecological organic acid Drugs 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- CQRYARSYNCAZFO-UHFFFAOYSA-N salicyl alcohol Chemical compound OCC1=CC=CC=C1O CQRYARSYNCAZFO-UHFFFAOYSA-N 0.000 description 3
- 229960004889 salicylic acid Drugs 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 2
- UIAFKZKHHVMJGS-UHFFFAOYSA-N 2,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1O UIAFKZKHHVMJGS-UHFFFAOYSA-N 0.000 description 2
- WXTMDXOMEHJXQO-UHFFFAOYSA-N 2,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC=C1O WXTMDXOMEHJXQO-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- ZDWPBMJZDNXTPG-UHFFFAOYSA-N 2h-benzotriazol-4-amine Chemical compound NC1=CC=CC2=C1NN=N2 ZDWPBMJZDNXTPG-UHFFFAOYSA-N 0.000 description 2
- YQUVCSBJEUQKSH-UHFFFAOYSA-N 3,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C(O)=C1 YQUVCSBJEUQKSH-UHFFFAOYSA-N 0.000 description 2
- UYEMGAFJOZZIFP-UHFFFAOYSA-N 3,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1 UYEMGAFJOZZIFP-UHFFFAOYSA-N 0.000 description 2
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- 229920001174 Diethylhydroxylamine Polymers 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 239000002211 L-ascorbic acid Substances 0.000 description 2
- 235000000069 L-ascorbic acid Nutrition 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 229960005070 ascorbic acid Drugs 0.000 description 2
- GGNQRNBDZQJCCN-UHFFFAOYSA-N benzene-1,2,4-triol Chemical compound OC1=CC=C(O)C(O)=C1 GGNQRNBDZQJCCN-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 239000003139 biocide Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 description 2
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- BVJSUAQZOZWCKN-UHFFFAOYSA-N p-hydroxybenzyl alcohol Chemical compound OCC1=CC=C(O)C=C1 BVJSUAQZOZWCKN-UHFFFAOYSA-N 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- 229940079877 pyrogallol Drugs 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 150000003852 triazoles Chemical group 0.000 description 2
- 150000003628 tricarboxylic acids Chemical class 0.000 description 2
- MWOOGOJBHIARFG-UHFFFAOYSA-N vanillin Chemical compound COC1=CC(C=O)=CC=C1O MWOOGOJBHIARFG-UHFFFAOYSA-N 0.000 description 2
- FGQOOHJZONJGDT-UHFFFAOYSA-N vanillin Natural products COC1=CC(O)=CC(C=O)=C1 FGQOOHJZONJGDT-UHFFFAOYSA-N 0.000 description 2
- 235000012141 vanillin Nutrition 0.000 description 2
- 229940117960 vanillin Drugs 0.000 description 2
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- 229940105324 1,2-naphthoquinone Drugs 0.000 description 1
- FYUDERIVRYVSGE-UHFFFAOYSA-N 1,3-diaminoprop-1-en-2-ol Chemical compound NCC(O)=CN FYUDERIVRYVSGE-UHFFFAOYSA-N 0.000 description 1
- PCAXITAPTVOLGL-UHFFFAOYSA-N 2,3-diaminophenol Chemical compound NC1=CC=CC(O)=C1N PCAXITAPTVOLGL-UHFFFAOYSA-N 0.000 description 1
- LXOFYPKXCSULTL-UHFFFAOYSA-N 2,4,7,9-tetramethyldec-5-yne-4,7-diol Chemical compound CC(C)CC(C)(O)C#CC(C)(O)CC(C)C LXOFYPKXCSULTL-UHFFFAOYSA-N 0.000 description 1
- IHJUECRFYCQBMW-UHFFFAOYSA-N 2,5-dimethylhex-3-yne-2,5-diol Chemical compound CC(C)(O)C#CC(C)(C)O IHJUECRFYCQBMW-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 description 1
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 description 1
- ZIMXAFGAUMQPMG-UHFFFAOYSA-N 2-[4-[bis(carboxymethyl)amino]butyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCCCN(CC(O)=O)CC(O)=O ZIMXAFGAUMQPMG-UHFFFAOYSA-N 0.000 description 1
- XWSGEVNYFYKXCP-UHFFFAOYSA-N 2-[carboxymethyl(methyl)amino]acetic acid Chemical compound OC(=O)CN(C)CC(O)=O XWSGEVNYFYKXCP-UHFFFAOYSA-N 0.000 description 1
- HHPDFYDITNAMAM-UHFFFAOYSA-N 2-[cyclohexyl(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)C1CCCCC1 HHPDFYDITNAMAM-UHFFFAOYSA-N 0.000 description 1
- JEPCLNGRAIMPQV-UHFFFAOYSA-N 2-aminobenzene-1,3-diol Chemical compound NC1=C(O)C=CC=C1O JEPCLNGRAIMPQV-UHFFFAOYSA-N 0.000 description 1
- CEBKHWWANWSNTI-UHFFFAOYSA-N 2-methylbut-3-yn-2-ol Chemical compound CC(C)(O)C#C CEBKHWWANWSNTI-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- NUYADIDKTLPDGG-UHFFFAOYSA-N 3,6-dimethyloct-4-yne-3,6-diol Chemical compound CCC(C)(O)C#CC(C)(O)CC NUYADIDKTLPDGG-UHFFFAOYSA-N 0.000 description 1
- KWYJDIUEHHCHCZ-UHFFFAOYSA-N 3-[2-[bis(2-carboxyethyl)amino]ethyl-(2-carboxyethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CCC(O)=O)CCN(CCC(O)=O)CCC(O)=O KWYJDIUEHHCHCZ-UHFFFAOYSA-N 0.000 description 1
- 229940018563 3-aminophenol Drugs 0.000 description 1
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910016570 AlCu Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 1
- RFSUNEUAIZKAJO-VRPWFDPXSA-N D-Fructose Natural products OC[C@H]1OC(O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-VRPWFDPXSA-N 0.000 description 1
- DSLZVSRJTYRBFB-LLEIAEIESA-N D-glucaric acid Chemical compound OC(=O)[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O DSLZVSRJTYRBFB-LLEIAEIESA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-O N-dimethylethanolamine Chemical compound C[NH+](C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-O 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- 125000000218 acetic acid group Chemical class C(C)(=O)* 0.000 description 1
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229940114055 beta-resorcylic acid Drugs 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- DLDJFQGPPSQZKI-UHFFFAOYSA-N but-2-yne-1,4-diol Chemical compound OCC#CCO DLDJFQGPPSQZKI-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 229960002433 cysteine Drugs 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 description 1
- QXLPXWSKPNOQLE-UHFFFAOYSA-N methylpentynol Chemical compound CCC(C)(O)C#C QXLPXWSKPNOQLE-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical class NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 239000000473 propyl gallate Substances 0.000 description 1
- 229940075579 propyl gallate Drugs 0.000 description 1
- 235000010388 propyl gallate Nutrition 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- C11D2111/22—
Abstract
一种可用于从半导体衬底去除残留物的组合物,所述组合物包含有效清洁量的:约55至80重量%的水;约0.3至约5.0重量%的EDTA;约10.0至约30.0重量%的胺化合物,其中所述胺化合物选自仲胺、叔胺和其混合物;约0.1至约5.0重量%的多官能有机酸;约0.01至约8.0重量%的氟离子源;约0至约60重量%的水混溶性的有机溶剂;和约0至约15重量%的腐蚀抑制剂。
Description
本申请为申请号为201610847724.9、申请日为2016年09月23日、发明名称为“清洁制剂”的中国专利申请的分案申请。
相关专利申请的交叉引用
本专利申请要求在2015年9月23日提交的美国临时专利申请序列号62/222,259的权益,其通过引用引入本文。
技术领域
本发明提供了可以用于多种应用的清洁组合物,所述应用包括例如去除半导体衬底上的不需要的抗蚀膜、蚀刻后和灰化后残留物。特别地,本发明提供了对于后段制程(back-end-of-the-line)操作特别有用的清洁组合物,其将有机组分的使用减至最小。
背景技术
将结合本发明在涉及集成电路制造的清洁应用中的用途描述本发明的背景。然而,应当理解本发明的用途如此后所描述的那样具有更宽的适用范围。
在集成电路的制造中,有时需要在硅、砷化镓、玻璃或位于制程中(in-process)集成电路晶片上的其它衬底的表面上沉积或生长的薄膜中蚀刻开口或其它几何形状。用于蚀刻这种膜的现有方法需要所述膜被暴露于化学蚀刻剂以去除所述膜的一部分。去除所述膜部分所使用的具体蚀刻剂取决于所述膜的性质。例如在氧化物膜的情况中,所述蚀刻剂可以是氢氟酸。在多晶硅膜的情况中,所述蚀刻剂通常为氢氟酸或硝酸和乙酸的混合物。
为确保仅去除所希望的膜部分,使用光刻工艺,通过该光刻工艺将计算机绘制的光掩模中的图案转印至膜表面。所述掩模起到确认将被选择性去除的膜区域的作用。使用光致抗蚀剂材料形成该图案,所述光致抗蚀剂材料是旋涂到所述制程中集成电路晶片上形成为薄膜的光敏材料,且其被暴露于通过所述光掩模投射的高强度辐射。取决于其组成,通常使用显影剂溶解被暴露或未被暴露的光致抗蚀剂材料,留下允许蚀刻在所选择的区域中进行的图案,同时防止在其它区域中的蚀刻。例如,正型(positive-type)抗蚀剂已经广泛用作掩模材料以在衬底上勾画图案,当蚀刻发生时,其将会变为通路、沟槽、接触孔等。
干式蚀刻例如等离子蚀刻、反应离子蚀刻或离子铣削越来越多地用于侵蚀衬底的无光致抗蚀剂保护的区域以形成通路、沟槽、接触孔等。作为所述等离子蚀刻工艺的结果,光致抗蚀剂、蚀刻气体和蚀刻材料副产物作为残留物被沉积在所述衬底上蚀刻开口的侧壁周围或其上。
这类干式蚀刻工艺通常也使得光致抗蚀剂极难去除。例如,在复杂的半导体器件例如具有多层的后段制程(back end line)互联布线的高级DRAM和逻辑器件中,反应离子蚀刻(RIE)用于生产穿过层间电介质的通路以提供一层的硅、硅化物或金属布线与下一层的布线之间的接触。这些通路通常暴露Al、AlCu、Cu、Ti、TiN、Ta、TaN、硅或硅化物,例如钨、钛或钴的硅化物。所述RIE工艺在所涉及的衬底上留下包含复杂混合物的残留物,所述复杂混合物可能包含,例如,再溅射的氧化物材料、源于所述蚀刻气体的聚合物材料以及来自用于勾画所述通路的抗蚀剂的有机材料。
此外,在所述蚀刻步骤结束之后,必须将所述光致抗蚀剂和蚀刻残留物从所述晶圆的受保护区域中去除,从而能够进行最后的精整操作。这可以通过使用适当的等离子灰化气体在等离子“灰化”步骤中实现。这通常在高温例如高于200℃下发生。灰化将大部分有机残留物转化为挥发性物质,但是在所述衬底上留下基本上是无机的残留物。该残留物通常不仅保留在所述衬底的表面上,而且保留在可能存在的通路的内壁上。因此,灰化处理的衬底常常使用通常被称为“液体剥离组合物”的清洁组合物处理以从所述衬底去除高粘附性的残留物。找到去除该残留物而不会负面影响(例如侵蚀、溶解或钝化)金属电路的适当的清洁组合物已被证明是困难的。不能够完全去除或中和所述残留物可导致电路布线的中断和不希望的电阻升高。
随着设备技术的进步和技术进步所需要的更小特征尺寸,用于器件的金属经常发生变化。例如,铜(Cu)变成用作导体和用于例如硬掩模层或扩散屏障层的层的标准材料,新的金属引入到该结构中。一种这样的金属是钴(Co)。钴的使用提出了挑战,因为钴的腐蚀特性与铜相似,但钴比铜惰性(noble)低,且倾向于比铜更易腐蚀。
因此,在本领域中需要一种清洁组合物,其对于包括剥离光致抗蚀剂和等离子灰化残留物(例如,通过等离子工艺产生的那些残留物)的后段清洁操作来说为无毒的和环境友好的并且同时不会受如上所述缺点的困扰。本领域特别需要用于半导体制造中的对于铜和其他金属(例如钴)具有良好的腐蚀保护能力的清洁组合物,其具有与常规的基于高有机含量的清洁组合物相当的清洁效能,能够在不改变衬底上金属结构的关键尺寸的同时去除蚀刻残留物。
发明概述
一方面,本公开提供一种可用于从半导体衬底去除残留物的组合物,所述组合物包含有效清洁量的:约55至80重量%的水;约0.3至约5.0重量%的EDTA;约10.0至约30.0重量%的胺化合物,其中所述胺化合物选自仲胺、叔胺和其混合物;约0.1至约5.0重量%的多官能有机酸;约0.01至约8.0重量%的氟离子源;约0至约60重量%的水混溶性的有机溶剂;和约0至约15重量%的腐蚀抑制剂。
另一方面,本公开提供一种用于从任选包含铝的衬底去除残留物的方法,该方法包括如下步骤:使包含有效清洁量的以下组分的组合物与衬底的表面接触:约55至80重量%的水;约0.3至约5.0重量%的EDTA;约10.0至约30.0重量%的胺化合物,其中所述胺化合物选自仲胺、叔胺和其混合物;约0.1至约5.0重量%的多官能有机酸;约0.01至约8.0重量%的氟离子源;约0至约60重量%的水混溶性的有机溶剂;和约0至约15重量%的腐蚀抑制剂;用水冲洗所述衬底;和干燥所述衬底,任选地其中该方法排除了在用水冲洗所述衬底的步骤之前的中间IPA冲洗步骤。
发明详述
以下详细说明仅提供优选的示例性的实施方式,且不意欲限制本发明的范围、适用性或配置。相反,以下优选的示例性的实施方式的详细说明将向本领域技术人员提供一种使其能够实施本发明优选的示例性的实施方式的说明。在不脱离如所附权利要求所示的本发明的精神和范围的情况下可在功能和要素排列中进行各种变化。
如本文和权利要求所使用,术语“包含”、“含有”和“包括”是包括性或开放式的,且不排除额外的未记载的要素、组合物组分或方法步骤。因此,这些术语涵盖更加限制性的术语“基本上由......组成”和“由......组成”。除非另有说明,本文提供的全部值包括直到给出的端点且包括端点,且组合物的一种或多种组分的值以组合物中各成分的重量百分比表示。
本发明提供了其组分的存在量能够有效地从衬底例如半导体衬底中去除残留物的组合物。在关于半导体衬底的应用中,这类残留物包括例如光致抗蚀剂残留物、灰化残留物和蚀刻残留物,例如由反应离子蚀刻导致的残留物。此外,半导体衬底还包含金属、硅、硅酸盐和/或层间介电材料例如沉积的硅氧化物,其也将与所述清洁组合物接触。典型的金属包括铜、铜合金、钴和其他金属例如诸如钨、钛、钽和铝。本发明的清洁组合物与这些材料是相容的,因为其显示低的金属和/或介电蚀刻率。特别地,提供或更低、 或更低、或者或更低的铜和钴蚀刻率的本公开的清洁组合物可能是优选的。
本发明的清洁组合物包含如下组分、基本上由如下组分组成或由如下组分组成:约55-80重量%的水;约0.3至约5.0重量%的EDTA;约10.0至约30.0重量%的胺化合物,其中所述胺化合物选自仲胺、叔胺和其混合物;约0.1至约5.0重量%的多官能有机酸;约0.01至约8.0重量%的氟离子源;约0至约60重量%的水混溶性的有机溶剂;和约0至约15重量%的腐蚀抑制剂。下文将更详细地解释各组分的作用。
本文详述的组分的全部重量百分比基于组分活性成分的量,而不是例如组分的水溶液的重量。
水
本发明的清洁组合物是水基的,并且因此其包含作为组合物的重量百分比项中最大的组分的水。在本发明中,水以多种方式起作用,例如,溶解所述组合物的一种或多种固体组分,作为所述组分的载体,作为促进无机盐和复合物去除的助剂,作为所述组合物的粘度调节剂和作为稀释剂。优选地,在所述清洁组合物中使用的水是去离子(DI)水。
对于大部分应用,据信水将占到例如所述清洁组合物的约55至约80重量%。本发明的其它优选实施方式可以包含约60至约80重量%的水。本发明的其它优选实施方式可以包含约60至约70重量%的水。在本文中这些具有高百分比水的组合物也被称为“富含水的组合物”。本发明的其他优选实施方式可以包括实现其他成分的期望重量百分比的量的水。
EDTA
本公开的清洁组合物包含乙二胺四乙酸(EDTA),其主要起到保护钴金属(当存在时)不受腐蚀的作用。不意欲被任何具体的理论束缚,据信EDTA结合于金属表面并阻止其他腐蚀剂接近,从而保护金属。
对于大部分应用,据信EDTA的量将占到组合物的约0.3至约5重量%。优选EDTA占到组合物的约0.3至约3.5重量%和最优选地,约0.3至约2重量%。
胺化合物(缓冲剂)
本公开的清洁组合物还包含有机仲胺或有机叔胺。有机仲胺或有机叔胺主要起到提供缓冲液的共轭碱组分的作用,以及在对于缓冲剂所需是过量的情况下,起到作为清洁组分的作用,因为它可以在清洁操作期间与有机残留物反应和螯合金属。
在本公开的某些优选的实施方式中用作缓冲剂组分的有机仲胺或有机叔胺化合物的实例包括烷醇胺。优选的烷醇胺包括具有1-5个碳原子的低级烷醇胺,其为肿胺和/或叔胺。这类烷醇胺的实例包括二乙醇胺、二-和三异丙醇胺、2-(2-氨基乙基氨基)乙醇、2-(2-氨基乙氧基)乙醇、三乙醇胺、N-乙基乙醇胺、N,N-二甲基乙醇胺、N,N-二乙基乙醇胺、N-甲基二乙醇胺、N-乙基二乙醇胺、环己基胺二乙醇和其混合物。
在优选的实施方式中,胺化合物是选自三乙醇胺(TEA)、二乙醇胺、N-甲基二乙醇胺、二异丙醇胺、N-甲基乙醇胺和其混合物的烷醇胺。
对于大部分应用,据信组合物中胺化合物的量将占到所述组合物的约10%至约30重量%,特别地,占到组合物的约20%至约30重量%。
优选地,胺化合物的pKa<9.0。
多官能有机酸(缓冲剂组分)
本公开的清洁组合物还包含一种或多种多官能有机酸,其主要作为缓冲剂的共轭酸部分发挥作用。如本文所使用,术语“多官能有机酸”是指具有多于一个羧酸基团的酸或多酸,包括但不限于(i)二羧酸(例如丙二酸、苹果酸等),具有芳族部分的二羧酸(例如邻苯二甲酸等),及其组合;和(ii)三羧酸(例如柠檬酸等)、具有芳族部分的三羧酸(例如偏苯三酸等),及其组合。
据信本公开组合物中多官能有机酸的量将为约0.1wt%-5wt%,优选0.25wt%-3wt%,更优选0.5wt%-2.0wt%。
出于本公开的目的,多官能有机酸是不同于EDTA组分(其也是多官能有机酸)的单独组分。
优选地,多官能有机酸和胺化合物以实现7-9的pH的比率混合。
氟离子源
本公开的清洁组合物还包含一种或多种氟离子源。氟离子的功能主要是帮助从衬底去除无机残留物。根据本发明提供氟离子源的优选化合物是氟化铵和季铵氟化物,例如诸如四甲基氟化铵和四丁基氟化铵。可使用脂族伯胺、仲胺或叔胺的氟化物盐。这种胺的实例是具有下式的那些:
R1NR2R3R4F
其中R1、R2、R3和R4各自代表H或(C1-C4)烷基。通常,R1、R2、R3和R4基团中的碳原子总数为12个碳原子或更少。
在选择氟离子源时,应该考虑该氟离子源是否释放不利地影响待清洁的表面的离子。例如,在清洁半导体元件时,清洁组合物中钠或钙离子的存在可对元件表面具有不利作用。在优选的实施方式中,氟离子源是氟化铵。
对于大部分应用,据信用作清洁组合物中氟离子源的化合物的量包含约0.01至约8重量%或约0.01至约7重量%的40%氟化铵溶液,或其化学计算当量。优选地,组合物包含约0.02至约8重量%,更优选约0.02至约6重量%,更优选约1至约8重量%,和最优选约0.025至约5重量%的40%氟化铵溶液。在一些实施方式中,组合物将包含约0.01至约8重量%或约0.01至约7重量%的氟离子源,其可通过40%氟化铵溶液提供。优选地,组合物包含约0.02至约6重量%的氟离子源,和最优选地,约0.025至约5%或约0.04至约2.5重量%的氟离子源或约0.05至约15重量%的40%氟化铵溶液,最优选地,约0.0625至约12.5重量%或约0.1至约6.25重量%的40%氟化铵溶液。然而,应理解所使用的氟离子的量将通常取决于待清洁的特定衬底。例如,在某些清洁应用中,当清洁包含对氟化物蚀刻具有高抗性的介电材料的衬底时,氟离子的量可以相对较高。相反,在其他应用中,例如当清洁包含对氟化物蚀刻具有低抗性的介电材料的衬底时,氟离子的量应相对较低。
溶剂(任选的)
根据本公开的组合物任选地包含至少一种有机溶剂。有机溶剂优选可与水混溶。在本发明各种实施方式中,衬底上的金属线通常决定是否使用水混溶性的有机溶剂。例如,当衬底上存在铝线时,水和卤素离子的结合将通常倾向于蚀刻铝。在这类实施方式中,使用水混溶性有机溶剂可以明显降低(如果不是消除)铝的蚀刻。
水混溶性有机溶剂的实例包括但不限于二甲基乙酰胺(DMAC)、N-甲基吡咯烷酮(NMP)、二甲亚砜(DMSO)、二甲基甲酰胺、N-甲基甲酰胺、甲酰胺、二甲基-2-哌啶酮(DMPD)、四氢糠醇、甘油、乙二醇和其他酰胺、醇或亚砜、或多官能化合物,例如羟基酰胺或氨基醇。水混溶性有机溶剂的进一步实例包括二醇和多元醇,例如(C2-C20)烷二醇和(C3-C20)烷三醇、环状醇和取代醇。这些水混溶性有机溶剂的具体实例包括丙二醇、四氢糠醇、双丙酮醇和1,4-环己烷二甲醇。在某些实施方式中,水混溶性有机溶剂可以是DMSO、NMP和/或DMAC。以上列举的水混溶性有机溶剂可单独使用或以两种或更多种溶剂的组合形式使用。
在本发明的某些优选的实施方式中,水混溶性有机溶剂可以包含二醇醚。二醇醚的实例包括乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、乙二醇二甲醚、乙二醇二乙醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丙醚、二乙二醇单异丙醚、二乙二醇单丁醚、二乙二醇单异丁醚、二乙二醇单苄基醚、二乙二醇二甲醚、二乙二醇二乙醚、三乙二醇单甲醚、三乙二醇二甲醚、聚乙二醇单甲醚、二乙二醇甲乙醚、三乙二醇乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、丙二醇甲醚乙酸酯、丙二醇单甲醚、丙二醇二甲醚、丙二醇单丁醚、丙二醇单丙醚、二丙二醇单甲醚、二丙二醇单丙醚、二丙二醇单异丙醚、二丙二醇单丁醚、二丙二醇二异丙醚、三丙二醇单甲醚、1-甲氧基-2-丁醇、2-甲氧基-1-丁醇、2-甲氧基-2-甲基丁醇、1,1-二甲氧基乙烷和2-(2-丁氧基乙氧基)乙醇。
对于大部分应用,据信水混溶性有机溶剂的量将占到组合物的约0%至约60重量%。优选地,当使用时,水混溶性溶剂占到组合物的约20%至约40重量%。
额外的腐蚀抑制剂(任选的)
本公开的组合物任选包含至少一种腐蚀抑制剂。腐蚀抑制剂用来与待清洁的衬底表面(其可以是金属(尤其是铜)或非金属)反应以在清洁期间使表面钝化并阻止过度蚀刻。特别地和不被任何具体的理论束缚,据信腐蚀抑制剂在铜表面(或其他的金属表面)形成不溶性螯合物的涂层,因此抑制光致抗蚀剂残留物去除组分和金属之间的接触,从而阻止腐蚀。
可使用本领域已知用于类似应用的任何腐蚀抑制剂,例如美国专利号5,417,877中公开的那些(其通过引用并入本文)。当组合物用于清洁金属性衬底时,腐蚀抑制剂的使用是特别优选的。腐蚀抑制剂的实例包括芳族羟基化合物、炔属醇、含羧基的有机化合物和其酸酐、以及三唑化合物。
示例性的芳族羟基化合物包括苯酚、甲酚、二甲苯酚、邻苯二酚、间苯二酚、对苯二酚、连苯三酚、1,2,4-苯三酚、水杨醇、对-羟基苯甲醇、邻-羟基苯甲醇、对-羟基苯乙醇、对-氨基苯酚、间-氨基苯酚、二氨基苯酚、氨基间苯二酚、对-羟基苯甲酸、邻-羟基苯甲酸、2,4-二羟基苯甲酸、2,5-二羟基苯甲酸、3,4-二羟基苯甲酸和3,5-二羟基苯甲酸。
示例性的炔属醇包括2-丁炔-1,4-二醇、3,5-二甲基-1-己炔-3-醇、2-甲基-3-丁炔-2-醇、3-甲基-1-戊炔-3-醇、3,6-二甲基-4-辛炔-3,6-二醇、2,4,7,9-四甲基-5-癸炔-4,7-二醇和2,5-二甲基-3-己炔-2,5-二醇。
示例性的含羧基的有机化合物和其酸酐包括甲酸、乙酸、丙酸、丁酸、异丁酸、苯甲酸、羟基乙酸、乳酸、乙酸酐和水杨酸。
示例性的三唑化合物包括苯并三唑、邻-甲苯基三唑、间-甲苯基三唑、对-甲苯基三唑、羧基苯并三唑、1-羟基苯并三唑、硝基苯并三唑和二羟基丙基苯并三唑。
在示例性的实施方式中,腐蚀抑制剂包括苯并三唑、羧基苯并三唑、氨基苯并三唑、D-果糖、儿茶酚、叔丁基邻苯二酚、L-抗坏血酸、没食子酸、香草醛、水杨酸、二乙基羟胺和聚(乙烯亚胺)中的一种或多种。
优选的铜腐蚀抑制剂选自苯并三唑、氨基苯并三唑、L-抗坏血酸、没食子酸、香草醛、二乙基羟胺及其混合物。
在其他的实施方式中,腐蚀抑制剂是三唑,且是苯并三唑、邻-甲苯基三唑、间-甲苯基三唑和对-甲苯基三唑中的至少一种。在其他实施方式中,三唑化合物选自邻-甲苯基三唑、间-甲苯基三唑、对-甲苯基三唑及其混合物。
对于大部分应用,据信腐蚀抑制剂将占到组合物的约0wt.%至约15wt.%;优选它占到组合物的约0.1wt.%至约10wt.%,优选约0.5wt.%至约5wt.%,和最优选约0.1wt.%至约1wt.%或约0.5wt.%至约5wt.%。
当腐蚀抑制剂是选自邻-甲苯基三唑、间-甲苯基三唑、对-甲苯基三唑和其混合物的三唑化合物时,优选三唑以清洁组合物的0.3至约1.5重量%的量存在。
在一些实施方式中,本公开的组合物不含金属离子。
在其他实施方式中,本公开的组合物不含硫酸酯的铵盐(ammonium salts ofsulfuric esters)。
其他任选成分
本发明的清洁组合物还可以包括一种或多种以下添加剂:表面活性剂、螯合剂、化学改性剂、染料、杀生物剂和其他添加剂。添加剂可以添加的程度是使得它们不会不利地影响组合物的pH范围。
可用于清洁组合物中的另一任选成分是金属螯合剂(除EDTA之外);其可以起到提高所述组合物将金属保持在溶液中的能力并增强金属性残留物的溶解的作用。可用于该目的的螯合剂的典型实例是如下有机酸及其异构体和盐:丁二胺四乙酸、1,2-环己二胺四乙酸(CyDTA)、二亚乙基三胺五乙酸(DETPA)、乙二胺四丙酸、(羟乙基)乙二胺三乙酸(HEDTA)、N,N,N',N'-乙二胺四(亚甲基膦)酸(EDTMP)、三亚乙基四胺六乙酸(TTHA)、1,3-二氨基-2-羟基丙烷-N,N,N',N'-四乙酸(DHPTA)、甲基亚氨二乙酸、丙二胺四乙酸、硝基三乙酸(NTA)、酒石酸、葡萄糖酸、葡萄糖二酸、甘油酸、草酸、邻苯二甲酸、马来酸、扁桃酸、丙二酸、乳酸、水杨酸、邻苯二酚、没食子酸、没食子酸丙酯、连苯三酚、8-羟基喹啉和半胱氨酸。优选的螯合剂是氨基羧酸例如CyDTA,以及氨基膦酸例如EDTMP。
对于大部分应用,据信所述螯合剂将以组合物的约0.1wt.%至约10wt.%、优选约0.5wt.%至约5wt.%的量存在于所述组合物中。
其他通常已知的组分例如染料、杀生物剂等可以以常规量,例如高达组合物的总共约5重量%的量加入清洁组合物中。
通常可以通过在室温下将所述组分在容器中混合在一起直到所有固体溶解在水基介质中而制备本发明的清洁组合物。
本发明的清洁组合物可用于从衬底去除不希望的残留物。据信所述组合物在对残留物在制造半导体器件的工艺过程中沉积或形成在其上的半导体衬底进行清洁时是特别有利的;这种残留物的实例包括膜形式的抗蚀剂组合物(正性和负性的均可)和在干式蚀刻过程中形成的蚀刻沉积物,以及化学降解的抗蚀剂膜。当待去除的残留物是在具有金属膜暴露表面的半导体衬底上的抗蚀剂膜和/或蚀刻沉积物时,使用所述组合物是特别有效的。能够通过使用本发明的组合物清洁而不侵蚀衬底本身的衬底的实例包括:金属衬底,例如:铝钛/钨;铝/硅;铝/硅/铜;二氧化硅;氮化硅;和镓/砷化物。这类衬底通常包括包含光致抗蚀剂和/或蚀刻后沉积物的残留物。
能够使用本发明的清洁组合物有效去除的抗蚀剂组合物的实例包括含有酯或1,2-萘醌(ortho-naphthoquinone)和酚醛清漆型粘结剂的光致抗蚀剂、以及含有嵌段的(blocked)聚羟基苯乙烯或聚羟基苯乙烯的共聚物与光致产酸剂的化学放大型抗蚀剂。市售可得的光致抗蚀剂组合物的实例包括Clariant Corporation的AZ 1518、AZ 4620,Shipley Company,Inc.光致抗蚀剂,S1400,APEX-ETM正性DUV,UV5TM正性DUV,MegapositTMSPRTM220系列;JSR Microelectronics光致抗蚀剂系列,系列;和Tokyo Ohka Kogyo Co.,Ltd.光致抗蚀剂TSCR系列和TDUR-P/N系列。
除了能有效地用于去除具有暴露的金属膜表面的半导体晶片上的抗蚀膜和/或蚀刻残留物外,当金属膜由铜或包含铜作为主要成分的铜合金组成时以及当低介电膜用作层间绝缘膜时,清洁组合物是特别有效的。包含铜作为主要成分的铜合金的实例是包含90重量%或更多的铜以及其他元素例如Sn、Ag、Mg、Ni、Co、Ti、Si和Al的铜合金。由于这些金属具有低电阻并改进元件的高速操作,但易被化学品溶解或腐蚀,所以本发明组合物的“非腐蚀”特性是重要的。
本公开的清洁组合物可用于在相对低的温度下从半导体衬底中去除蚀刻和灰化后残留物、其它有机和无机残留物以及聚合物残留物而几乎无腐蚀效应。应当将所述清洁组合物施加到表面上达足以得到希望的清洁效果的一段时间。所述时间根据多种因素改变,包括例如所述残留物的性质、所述清洁组合物的温度和使用的具体清洁组合物。一般说来,例如可以通过在约25℃至约85℃的温度下使清洁组合物与衬底接触约1分钟至约1小时的一段时间,然后从所述衬底冲洗所述清洁组合物并且干燥所述衬底,来使用所述清洁组合物。
可以通过任何适当的手段例如浸没、喷洒或通过单晶片工艺进行所述接触步骤;可以使用任何利用液体以去除光致抗蚀剂、灰化或蚀刻沉积物和/或污染物的方法。
可以通过任何适当的手段,例如通过浸渍或喷洒技术用去离子水冲洗衬底,来进行冲洗步骤。在优选的实施方式中,使用去离子水和水混溶性有机溶剂(例如诸如异丙醇)的混合物来进行冲洗步骤。
通过任何适当的手段(例如通过异丙醇(IPA)蒸气干燥或通过向心力)进行所述干燥步骤。
本领域普通技术人员将认识到,可以改进本发明的清洁组合物以达到最佳清洁而不破坏衬底,从而可以在制造过程中维持高通量的清洁。例如,本领域普通技术人员将认识到,例如可以根据待清洁的衬底的组成、待去除的残留物的性质和使用的具体工艺参数对一些或所有组分的量进行调整。
虽然本发明在原则上结合清洁半导体衬底进行了描述,但本发明的清洁组合物可以用于清洁包含有机和无机残留物的任何衬底。
因此,本发明至少提供了以下各项:
1.一种用于从衬底,优选半导体衬底去除残留物的组合物,所述组合物包含有效清洁量的:
约55至80重量%的水;
约0.3至约5.0重量%的EDTA;
约10.0至约30.0重量%的胺化合物,其中所述胺化合物选自仲胺、叔胺和其混合物;
约0.1至约5.0重量%的多官能有机酸;
约0.01至约8.0重量%的氟离子源;
约0至约60重量%的水混溶性的有机溶剂;和
约0至约15重量%的腐蚀抑制剂。
2.根据项1所述的组合物,其中所述胺化合物选自三乙醇胺(TEA)、二乙醇胺、N-甲基二乙醇胺、二异丙醇胺、N-甲基乙醇胺和其混合物。
3.根据项1或2所述的组合物,其中所述多官能有机酸选自丙二酸、苹果酸、邻苯二甲酸、柠檬酸、偏苯三酸及其组合。
4.根据项1-3任一项所述的组合物,其中所述腐蚀抑制剂是存在的,且其是三唑化合物。
5.根据项4所述的组合物,其中所述三唑化合物选自苯并三唑、邻-甲苯基三唑、间-甲苯基三唑、对-甲苯基三唑、羧基苯并三唑、1-羟基苯并三唑、硝基苯并三唑和二羟基丙基苯并三唑。
6.根据项5所述的组合物,其中所述三唑化合物选自邻-甲苯基三唑、间-甲苯基三唑、对-甲苯基三唑和其混合物。
7.根据项1-6任一项所述的组合物,其中所述水混溶性的有机溶剂是存在的,且选自二甲基乙酰胺(DMAC)、N-甲基吡咯烷酮(NMP)、二甲亚砜(DMSO)、二甲基甲酰胺、N-甲基甲酰胺、甲酰胺、二甲基-2-哌啶酮(DMPD)、四氢糠醇、甘油、乙二醇、酰胺、醇、亚砜、羟基酰胺、氨基醇、(C2-C20)烷二醇、(C3-C20)烷三醇、环状醇、丙二醇、四氢糠醇、双丙酮醇和1,4-环己烷二甲醇。
8.根据项1-7任一项所述的组合物,其中所述水混溶性的有机溶剂选自DMSO、NMP和DMAC。
9.根据项1-6任一项所述的组合物,其中所述水混溶性的有机溶剂是存在的,且是二醇醚,所述二醇醚选自乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、乙二醇二甲醚、乙二醇二乙醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丙醚、二乙二醇单异丙醚、二乙二醇单丁醚、二乙二醇单异丁醚、二乙二醇单苄基醚、二乙二醇二甲醚、二乙二醇二乙醚、三乙二醇单甲醚、三乙二醇二甲醚、聚乙二醇单甲醚、二乙二醇甲乙醚、三乙二醇乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、丙二醇甲醚乙酸酯、丙二醇单甲醚、丙二醇二甲醚、丙二醇单丁醚、丙二醇单丙醚、二丙二醇单甲醚、二丙二醇单丙醚、二丙二醇单异丙醚、二丙二醇单丁醚、二丙二醇二异丙醚、三丙二醇单甲醚、1-甲氧基-2-丁醇、2-甲氧基-1-丁醇、2-甲氧基-2-甲基丁醇、1,1-二甲氧基乙烷和2-(2-丁氧基乙氧基)乙醇。
10.根据项1-9任一项所述的组合物,其包含:
约60至70重量%的水;
约0.3至约3.5重量%的EDTA;
约20.0至约30.0重量%的胺化合物,其中所述胺化合物选自仲胺、叔胺和其混合物;
约0.5至约2.0重量%的多官能有机酸;
约0.025至约5.0重量%的氟离子源;
约20至约40重量%的水混溶性的有机溶剂;和
约0.3至约1.5重量%的选自邻-甲苯基三唑、间-甲苯基三唑、对-甲苯基三唑和其混合物的腐蚀抑制剂。
11.一种用于从任选包含铝的衬底去除残留物的方法,所述方法包括如下步骤:
将根据项1-10任一项所述的组合物与所述衬底的表面接触;
用水冲洗所述衬底;和
干燥所述衬底,其中所述方法排除了在用水冲洗所述衬底的步骤之前的中间IPA冲洗步骤。
12.根据项11所述的方法,其中所述衬底是半导体衬底。
13.根据项12所述的方法,其中所述衬底包含钴金属和铝。
具体实施方式
为了进一步说明本发明而不是旨在限制本发明而提供了如下实施例。
实施例
下表1中的制剂通过按照配方(请参见下表中配方)混合并掺合组分,并在室温下搅拌来制备。在将溶液加热至35-50℃温度的加热板上的烧杯中(具有以500rpm搅拌的1”Teflon搅拌棒)测量金属蚀刻率。金属(硅晶片上的Cu或Co)的毯覆式晶片(blanket wafer)用于蚀刻率测量,采用ResMap 4点探头。在化学浸渍之前和之后测量金属覆盖层的厚度,和膜损失除以加工时间(分钟)给出以埃每分钟计的金属蚀刻率。
表1中的数据证明,当将至少0.3%,尤其是0.3-3.0%的量的乙二胺四乙酸(EDTA)加入到包含包括有机酸、胺、氟化物、水和有机溶剂的其他组分的晶片清洁制剂中时,观察到EDTA的Co腐蚀抑制作用。当至少0.3%的额外的腐蚀抑制剂例如诸如甲苯基三唑(TTL)存在于所述制剂中时(参见98K和98S),更是如此。以上数据提示,如果EDTA%的量低于0.3%,则Co腐蚀抑制不充分。
尽管本发明的原理已经结合优选实施方式一起在上文描述,很显然,应理解该说明仅通过举例的方式进行,而不作为对本发明范围的限制。
Claims (16)
1.一种用于从衬底,优选半导体衬底去除残留物的组合物,所述组合物包含有效清洁量的:
约55至80重量%的水;
约0.3至约5.0重量%的EDTA;
约10.0至约30.0重量%的胺化合物,其中所述胺化合物选自仲胺、叔胺和其混合物;
约0.1至约5.0重量%的多官能有机酸;
约0.01至约8.0重量%的氟离子源;
约0至约60重量%的水混溶性的有机溶剂;和
约0至约15重量%的腐蚀抑制剂。
2.根据权利要求1所述的组合物,其中所述胺化合物选自三乙醇胺(TEA)、二乙醇胺、N-甲基二乙醇胺、二异丙醇胺、N-甲基乙醇胺和其混合物。
3.根据权利要求1或2所述的组合物,其中所述多官能有机酸选自丙二酸、苹果酸、邻苯二甲酸、柠檬酸、偏苯三酸及其组合。
4.根据权利要求1-3任一项所述的组合物,其中所述腐蚀抑制剂是存在的,且其是三唑化合物。
5.根据权利要求4所述的组合物,其中所述三唑化合物选自苯并三唑、邻-甲苯基三唑、间-甲苯基三唑、对-甲苯基三唑、羧基苯并三唑、1-羟基苯并三唑、硝基苯并三唑和二羟基丙基苯并三唑。
6.根据权利要求5所述的组合物,其中所述三唑化合物选自邻-甲苯基三唑、间-甲苯基三唑、对-甲苯基三唑和其混合物。
7.根据权利要求1-6任一项所述的组合物,其中所述水混溶性的有机溶剂是存在的,且选自二甲基乙酰胺(DMAC)、N-甲基吡咯烷酮(NMP)、二甲亚砜(DMSO)、二甲基甲酰胺、N-甲基甲酰胺、甲酰胺、二甲基-2-哌啶酮(DMPD)、四氢糠醇、甘油、乙二醇、酰胺、醇、亚砜、羟基酰胺、氨基醇、(C2-C20)烷二醇、(C3-C20)烷三醇、环状醇、丙二醇、四氢糠醇、双丙酮醇和1,4-环己烷二甲醇。
8.根据权利要求1-7任一项所述的组合物,其中所述水混溶性的有机溶剂选自DMSO、NMP和DMAC。
9.根据权利要求1-6任一项所述的组合物,其中所述水混溶性的有机溶剂是存在的,且是二醇醚,所述二醇醚选自乙二醇单甲醚、乙二醇单乙醚、乙二醇单丁醚、乙二醇二甲醚、乙二醇二乙醚、二乙二醇单甲醚、二乙二醇单乙醚、二乙二醇单丙醚、二乙二醇单异丙醚、二乙二醇单丁醚、二乙二醇单异丁醚、二乙二醇单苄基醚、二乙二醇二甲醚、二乙二醇二乙醚、三乙二醇单甲醚、三乙二醇二甲醚、聚乙二醇单甲醚、二乙二醇甲乙醚、三乙二醇乙二醇单甲醚乙酸酯、乙二醇单乙醚乙酸酯、丙二醇甲醚乙酸酯、丙二醇单甲醚、丙二醇二甲醚、丙二醇单丁醚、丙二醇单丙醚、二丙二醇单甲醚、二丙二醇单丙醚、二丙二醇单异丙醚、二丙二醇单丁醚、二丙二醇二异丙醚、三丙二醇单甲醚、1-甲氧基-2-丁醇、2-甲氧基-1-丁醇、2-甲氧基-2-甲基丁醇、1,1-二甲氧基乙烷和2-(2-丁氧基乙氧基)乙醇。
10.根据权利要求1-9任一项所述的组合物,其包含:
约60至70重量%的水;
约0.3至约3.5重量%的EDTA;
约20.0至约30.0重量%的胺化合物,其中所述胺化合物选自仲胺、叔胺和其混合物;
约0.5至约2.0重量%的多官能有机酸;
约0.025至约5.0重量%的氟离子源;
约20至约40重量%的水混溶性的有机溶剂;和
约0.3至约1.5重量%的选自邻-甲苯基三唑、间-甲苯基三唑、对-甲苯基三唑和其混合物的腐蚀抑制剂。
11.一种用于从任选包含铝的衬底去除残留物的方法,所述方法包括如下步骤:
将根据权利要求1-10任一项所述的组合物与所述衬底的表面接触;
用水冲洗所述衬底;和
干燥所述衬底,其中所述方法排除了在用水冲洗所述衬底的步骤之前的中间IPA冲洗步骤。
12.根据权利要求11所述的方法,其中所述衬底是半导体衬底。
13.根据权利要求12所述的方法,其中所述衬底包含钴金属和铝。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562222259P | 2015-09-23 | 2015-09-23 | |
US62/222,259 | 2015-09-23 | ||
US15/264,078 US10233413B2 (en) | 2015-09-23 | 2016-09-13 | Cleaning formulations |
US15/264,078 | 2016-09-13 | ||
CN201610847724.9A CN106547178A (zh) | 2015-09-23 | 2016-09-23 | 清洁制剂 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610847724.9A Division CN106547178A (zh) | 2015-09-23 | 2016-09-23 | 清洁制剂 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114940926A true CN114940926A (zh) | 2022-08-26 |
Family
ID=58276729
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210709283.1A Pending CN114940926A (zh) | 2015-09-23 | 2016-09-23 | 清洁制剂 |
CN201610847724.9A Pending CN106547178A (zh) | 2015-09-23 | 2016-09-23 | 清洁制剂 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610847724.9A Pending CN106547178A (zh) | 2015-09-23 | 2016-09-23 | 清洁制剂 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10233413B2 (zh) |
JP (1) | JP6470239B2 (zh) |
KR (1) | KR101960351B1 (zh) |
CN (2) | CN114940926A (zh) |
PH (1) | PH12016000330A1 (zh) |
SG (1) | SG10201607915YA (zh) |
TW (1) | TWI626305B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016161072A1 (en) * | 2015-03-31 | 2016-10-06 | Air Products And Chemicals, Inc. | Cleaning formulations |
KR101966808B1 (ko) | 2016-09-30 | 2019-04-08 | 세메스 주식회사 | 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치 |
US10062560B1 (en) * | 2017-04-26 | 2018-08-28 | Globalfoundries Inc. | Method of cleaning semiconductor device |
US10879076B2 (en) * | 2017-08-25 | 2020-12-29 | Versum Materials Us, Llc | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device |
US10475654B2 (en) | 2017-08-31 | 2019-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wrap-around contact plug and method manufacturing same |
US20190103282A1 (en) * | 2017-09-29 | 2019-04-04 | Versum Materials Us, Llc | Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device |
CN109976108A (zh) * | 2017-12-27 | 2019-07-05 | 安集微电子(上海)有限公司 | 一种用于半导体的清洗液 |
CN110713868A (zh) * | 2018-07-13 | 2020-01-21 | 巴斯夫欧洲公司 | 可移除氮化钛的蚀刻后残渣清理溶液 |
CN108998267A (zh) * | 2018-08-29 | 2018-12-14 | 李少伟 | 一种半导体器件防蚀剂清洗剂及制备方法 |
JP7433293B2 (ja) * | 2019-03-26 | 2024-02-19 | 富士フイルム株式会社 | 洗浄液 |
EP3986997A4 (en) * | 2019-06-19 | 2023-07-19 | Versum Materials US, LLC | CLEANING COMPOSITION FOR SEMICONDUCTOR SUBSTRATES |
CN111041539B (zh) * | 2020-01-02 | 2021-07-30 | 杭州和韵科技有限公司 | 一种铝阳极氧化染色前双步表调剂及其制备与应用 |
KR102192954B1 (ko) * | 2020-03-26 | 2020-12-18 | 동우 화인켐 주식회사 | 고분자 세정용 조성물 |
CN113913835A (zh) * | 2021-10-20 | 2022-01-11 | 淄博倍尔科新型材料有限公司 | 一种去除大体积固态顽固油污的新型组合物 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101356629A (zh) * | 2005-11-09 | 2009-01-28 | 高级技术材料公司 | 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 |
CN102732393A (zh) * | 2011-03-16 | 2012-10-17 | 气体产品与化学公司 | 清洁制剂和使用该清洁制剂的方法 |
CN103777475A (zh) * | 2012-10-23 | 2014-05-07 | 气体产品与化学公司 | 清洁制剂 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6492311B2 (en) * | 1990-11-05 | 2002-12-10 | Ekc Technology, Inc. | Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process |
US6896826B2 (en) | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US6773873B2 (en) | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
TW200505975A (en) | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
US20050205835A1 (en) * | 2004-03-19 | 2005-09-22 | Tamboli Dnyanesh C | Alkaline post-chemical mechanical planarization cleaning compositions |
CN100549236C (zh) * | 2004-04-09 | 2009-10-14 | 上海月旭半导体科技有限公司 | 半导体芯片化学机械研磨后清洗液 |
KR101444468B1 (ko) * | 2005-10-05 | 2014-10-30 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제 |
EP2164938B1 (en) | 2007-05-17 | 2017-06-21 | Entegris Inc. | New antioxidants for post-cmp cleaning formulations |
JP5086893B2 (ja) | 2008-05-26 | 2012-11-28 | 花王株式会社 | 半導体デバイス用基板用の洗浄液 |
US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
US8877640B2 (en) | 2010-07-06 | 2014-11-04 | United Microelectronics Corporation | Cleaning solution and damascene process using the same |
KR20120078607A (ko) * | 2010-12-31 | 2012-07-10 | 제일모직주식회사 | 반도체 소자 세정액 조성물 및 이를 이용한 반도체 소자의 세정 방법 |
US9224643B2 (en) | 2011-09-19 | 2015-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for tunable interconnect scheme |
US10133180B2 (en) * | 2011-10-05 | 2018-11-20 | Avantor Performance Materials | Microelectronic substrate cleaning compositions having copper/azole polymer inhibition |
CN102533470A (zh) | 2011-12-29 | 2012-07-04 | 镇江市港南电子有限公司 | 一种硅片清洗液 |
KR20140013310A (ko) * | 2012-07-23 | 2014-02-05 | 삼성디스플레이 주식회사 | 식각액 조성물, 및 이를 이용한 금속 배선과 박막 트랜지스터 표시판 제조 방법 |
CN103668206A (zh) * | 2012-09-19 | 2014-03-26 | 东友精细化工有限公司 | 用于铜层/钛层的蚀刻溶液组合物 |
KR20140092077A (ko) * | 2013-01-15 | 2014-07-23 | 주식회사 코원이노텍 | 반도체 및 디스플레이 제조공정용 세정제 조성물 |
US9957469B2 (en) * | 2014-07-14 | 2018-05-01 | Versum Materials Us, Llc | Copper corrosion inhibition system |
-
2016
- 2016-09-13 US US15/264,078 patent/US10233413B2/en active Active
- 2016-09-22 PH PH12016000330A patent/PH12016000330A1/en unknown
- 2016-09-22 SG SG10201607915YA patent/SG10201607915YA/en unknown
- 2016-09-22 TW TW105130675A patent/TWI626305B/zh active
- 2016-09-23 JP JP2016185676A patent/JP6470239B2/ja active Active
- 2016-09-23 CN CN202210709283.1A patent/CN114940926A/zh active Pending
- 2016-09-23 KR KR1020160122407A patent/KR101960351B1/ko active IP Right Grant
- 2016-09-23 CN CN201610847724.9A patent/CN106547178A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101356629A (zh) * | 2005-11-09 | 2009-01-28 | 高级技术材料公司 | 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 |
CN102732393A (zh) * | 2011-03-16 | 2012-10-17 | 气体产品与化学公司 | 清洁制剂和使用该清洁制剂的方法 |
CN103777475A (zh) * | 2012-10-23 | 2014-05-07 | 气体产品与化学公司 | 清洁制剂 |
Also Published As
Publication number | Publication date |
---|---|
CN106547178A (zh) | 2017-03-29 |
JP6470239B2 (ja) | 2019-02-13 |
SG10201607915YA (en) | 2017-04-27 |
TW201712110A (zh) | 2017-04-01 |
PH12016000330A1 (en) | 2018-03-26 |
JP2017071766A (ja) | 2017-04-13 |
TWI626305B (zh) | 2018-06-11 |
KR101960351B1 (ko) | 2019-03-20 |
US20170081622A1 (en) | 2017-03-23 |
KR20170039575A (ko) | 2017-04-11 |
US10233413B2 (en) | 2019-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI626305B (zh) | 清潔配方 | |
KR102055788B1 (ko) | 에칭 조성물 및 이를 사용하는 방법 | |
JP6546080B2 (ja) | クリーニング用組成物 | |
KR100857865B1 (ko) | 세정 제제 | |
JP5662365B2 (ja) | クリーニング調合物およびそのクリーニング調合物の使用方法 | |
US7879783B2 (en) | Cleaning composition for semiconductor substrates | |
JP6612891B2 (ja) | 洗浄配合 | |
JP2007016232A (ja) | カチオン塩含有残留物除去用の組成物及びそれを使用する方法 | |
WO2020257103A1 (en) | Cleaning composition for semiconductor substrates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |