RS50930B - Kompozicije za mikroelektronsko čišćenje koje sadrže oksidatore i organske rastvarače - Google Patents
Kompozicije za mikroelektronsko čišćenje koje sadrže oksidatore i organske rastvaračeInfo
- Publication number
- RS50930B RS50930B YUP-1062/04A YUP106204A RS50930B RS 50930 B RS50930 B RS 50930B YU P106204 A YUP106204 A YU P106204A RS 50930 B RS50930 B RS 50930B
- Authority
- RS
- Serbia
- Prior art keywords
- weight
- oxidant
- residues
- cleaning composition
- organic solvents
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title abstract 4
- 239000000203 mixture Substances 0.000 title abstract 3
- 238000004377 microelectronic Methods 0.000 title abstract 2
- 239000003960 organic solvent Substances 0.000 title 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- 239000007800 oxidant agent Substances 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 abstract 2
- FCKYPQBAHLOOJQ-UWVGGRQHSA-N 2-[[(1s,2s)-2-[bis(carboxymethyl)amino]cyclohexyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)[C@H]1CCCC[C@@H]1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UWVGGRQHSA-N 0.000 abstract 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000011358 absorbing material Substances 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 239000002585 base Substances 0.000 abstract 1
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000000536 complexating effect Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052740 iodine Inorganic materials 0.000 abstract 1
- 239000011630 iodine Substances 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 abstract 1
- 239000003495 polar organic solvent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
- C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
- C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3454—Organic compounds containing sulfur containing sulfone groups, e.g. vinyl sulfones
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
- C23G1/18—Organic inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Kompozicija za čišćenje, koja je u stanju da čisti u jednom koraku sa mikro-elektronske podloge sa bakarnom metalizacijom i koja sadrži dielektrik niske k-vrednosti ili visoke k-vrednosti, ostatke fotolaka sa jakim unakrsnim vezama ili otvrdnutog fotolaka, ostatake posle nagrizanja/rezanja plazmom, jednokratno upotrebljene materijale za apsorbovanje svetlosti, obloge za suzbijanje odsjaja i strukture koje sadže titan ili tantal, naznačena time, što se pomenuta kompozicija za čišćenje suštinski sastoji od:oko 0.1 do oko 30 težinskih % vodonik peroksida kao oksidatora, oko 1 do oko 99 težinskih % sulfolana kao polarnog organskog rastvarača koji ima sposobnost vodničnog vezivanja i reaguje minimalno ili ne reaguje sa oksidatorom;od više od 0 do oko 30 težinskih % tetrametilamonijum hidroksida kao alkalne baze;0.1 do 5 težinskih % reagensa za helatizaciju ili kompleksiranje metala izabranog iz grupe koju čine trans-1,2-cikIoheksandiamin tetrasirćetna kiselina i etilendiamin tetra(metilen fosfonska kiselina) iod oko 0.1 do oko 98 težinskih % vode.Prijava sadrži još 6 zavisnih patentnih zahteva.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38680002P | 2002-06-07 | 2002-06-07 | |
PCT/US2003/016828 WO2003104900A2 (en) | 2002-06-07 | 2003-05-27 | Microelectronic cleaning compositions containing oxidizers and organic solvents |
Publications (2)
Publication Number | Publication Date |
---|---|
RS106204A RS106204A (en) | 2007-02-05 |
RS50930B true RS50930B (sr) | 2010-08-31 |
Family
ID=29736216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
YUP-1062/04A RS50930B (sr) | 2002-06-07 | 2003-05-27 | Kompozicije za mikroelektronsko čišćenje koje sadrže oksidatore i organske rastvarače |
Country Status (17)
Country | Link |
---|---|
US (1) | US7419945B2 (sr) |
EP (2) | EP2034365A3 (sr) |
JP (1) | JP4304154B2 (sr) |
KR (1) | KR100958069B1 (sr) |
CN (2) | CN102061228B (sr) |
AU (1) | AU2003238773A1 (sr) |
BR (1) | BR0311827A (sr) |
CA (1) | CA2488735A1 (sr) |
IL (1) | IL165580A (sr) |
IN (1) | IN2004CH02761A (sr) |
MY (1) | MY139208A (sr) |
NO (1) | NO20050076L (sr) |
PL (1) | PL208299B1 (sr) |
RS (1) | RS50930B (sr) |
TW (1) | TWI322827B (sr) |
WO (1) | WO2003104900A2 (sr) |
ZA (1) | ZA200409621B (sr) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
TW200505975A (en) * | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
EP1847880A3 (en) | 2004-02-11 | 2010-02-17 | Mallinckrodt Baker, Inc. | Composition for cleaning microelectronic substrates containing halogen oxygen acids and derivatives thereof |
BRPI0418529A (pt) * | 2004-02-11 | 2007-05-15 | Mallinckrodt Baker Inc | composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos |
PL1720966T3 (pl) * | 2004-03-01 | 2011-06-30 | Avantor Performance Mat Inc | Kompozycje do czyszczenia nanoelektroniki i mikroelektroniki |
JP4524744B2 (ja) * | 2004-04-14 | 2010-08-18 | 日本電気株式会社 | 有機マスクの形成方法及び該有機マスクを利用したパターン形成方法 |
US7867779B2 (en) | 2005-02-03 | 2011-01-11 | Air Products And Chemicals, Inc. | System and method comprising same for measurement and/or analysis of particles in gas stream |
CA2603393A1 (en) * | 2005-04-04 | 2006-10-12 | Mallinckrodt Baker, Inc. | Compositions for cleaning ion implanted photoresist in front end of line applications |
US7754668B2 (en) * | 2005-05-06 | 2010-07-13 | Mallinckrodt Baker. Inc | Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist |
CN1862392B (zh) * | 2005-05-13 | 2011-08-03 | 安集微电子(上海)有限公司 | 一种去除光阻层的组合物及其使用方法 |
CN1862391B (zh) | 2005-05-13 | 2013-07-10 | 安集微电子(上海)有限公司 | 除光阻层的组合物及其使用方法 |
CN101511607A (zh) * | 2005-06-06 | 2009-08-19 | 高级技术材料公司 | 整合的化学机械抛光组合物及单台板处理方法 |
TWI408212B (zh) * | 2005-06-07 | 2013-09-11 | Advanced Tech Materials | 金屬及介電相容犧牲抗反射塗層清洗及移除組成物 |
KR101221560B1 (ko) * | 2005-09-02 | 2013-01-14 | 주식회사 동진쎄미켐 | 변성된 포토레지스트 제거를 위한 반도체 소자용 박리액조성물 |
JP2009512194A (ja) | 2005-10-05 | 2009-03-19 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | ポストエッチング残渣を除去するための酸化性水性洗浄剤 |
WO2007111694A2 (en) | 2005-11-09 | 2007-10-04 | Advanced Technology Materials, Inc. | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon |
KR101319113B1 (ko) * | 2006-04-13 | 2013-10-17 | 동우 화인켐 주식회사 | 금속용 세정제 |
TWI572746B (zh) * | 2006-12-21 | 2017-03-01 | 恩特葛瑞斯股份有限公司 | 用以移除蝕刻後殘餘物之液體清洗劑 |
KR101409085B1 (ko) * | 2007-03-16 | 2014-06-17 | 미츠비시 가스 가가쿠 가부시키가이샤 | 세정용 조성물, 반도체 소자의 제조 방법 |
JP4952375B2 (ja) * | 2007-05-23 | 2012-06-13 | 株式会社明電舎 | レジスト除去方法及びその装置 |
KR20100098409A (ko) * | 2007-11-22 | 2010-09-06 | 간또 가가꾸 가부시끼가이샤 | 에칭액 조성물 |
US8110508B2 (en) | 2007-11-22 | 2012-02-07 | Samsung Electronics Co., Ltd. | Method of forming a bump structure using an etching composition for an under bump metallurgy layer |
WO2009072402A1 (ja) | 2007-12-04 | 2009-06-11 | Meidensha Corporation | レジスト除去方法及びその装置 |
CN101359189B (zh) * | 2008-09-17 | 2011-04-27 | 电子科技大学 | 正性光敏聚酰亚胺光刻胶用显影液 |
US20100178887A1 (en) | 2009-01-13 | 2010-07-15 | Millam Michael J | Blast shield for use in wireless transmission system |
EP2401655B1 (en) * | 2009-02-25 | 2014-03-12 | Avantor Performance Materials, Inc. | Multipurpose acidic, organic solvent based microelectronic cleaning composition |
SG173833A1 (en) * | 2009-02-25 | 2011-09-29 | Avantor Performance Mat Inc | Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers |
US8754021B2 (en) | 2009-02-27 | 2014-06-17 | Advanced Technology Materials, Inc. | Non-amine post-CMP composition and method of use |
SG176144A1 (en) * | 2009-06-25 | 2011-12-29 | Lam Res Ag | Method for treating a semiconductor wafer |
WO2010150134A2 (en) * | 2009-06-25 | 2010-12-29 | Lam Research Ag | Method for treating a semiconductor wafer |
ES2711924T3 (es) * | 2010-01-25 | 2019-05-08 | Westinghouse Electric Co Llc | Procedimiento y composición para eliminar depósitos de cal formados en una superficie metálica dentro de un sistema generador de vapor |
CN102811955B (zh) | 2010-01-26 | 2014-07-30 | 控制工程学公司 | 除去沉积物的方法与组合物 |
CN101908503A (zh) * | 2010-07-21 | 2010-12-08 | 河北工业大学 | 超大规模集成电路多层铜布线化学机械抛光后的洁净方法 |
US8921295B2 (en) | 2010-07-23 | 2014-12-30 | American Sterilizer Company | Biodegradable concentrated neutral detergent composition |
CN101968610A (zh) * | 2010-08-12 | 2011-02-09 | 武汉华灿光电有限公司 | 一种全湿刻蚀后去胶的方法 |
KR101914817B1 (ko) * | 2011-10-21 | 2018-12-28 | 엔테그리스, 아이엔씨. | 비-아민 cmp-후 조성물 및 사용 방법 |
JP6066552B2 (ja) | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | 電子デバイス用洗浄液組成物 |
CN104508072A (zh) * | 2012-02-15 | 2015-04-08 | 安格斯公司 | 用于cmp后去除的组合物及使用方法 |
WO2014087925A1 (ja) * | 2012-12-03 | 2014-06-12 | 三菱瓦斯化学株式会社 | 半導体素子用洗浄液及びそれを用いた洗浄方法 |
SG10201710610PA (en) * | 2013-07-05 | 2018-02-27 | Wako Pure Chem Ind Ltd | Etching agent, etching method and etching agent preparation liquid |
JP2015108041A (ja) * | 2013-12-03 | 2015-06-11 | ダイキン工業株式会社 | 洗浄用組成物 |
WO2015119925A1 (en) * | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
CN103955123A (zh) * | 2014-04-11 | 2014-07-30 | 武汉高芯科技有限公司 | 一种离子注入后晶片的湿法去胶液及光刻胶去除方法 |
US9567493B2 (en) * | 2014-04-25 | 2017-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMP slurry solution for hardened fluid material |
US9908821B2 (en) | 2015-09-29 | 2018-03-06 | Winfield Solutions, Llc | Micronutrient compositions and systems and methods of using same |
US9938201B1 (en) | 2016-02-25 | 2018-04-10 | Winfield Solutions, Llc | Micronutrient compositions containing zinc and systems and methods of using same |
CN114706271A (zh) | 2016-03-31 | 2022-07-05 | 富士胶片株式会社 | 半导体制造用处理液及图案形成方法 |
JP6880085B2 (ja) * | 2017-02-20 | 2021-06-02 | 富士フイルム株式会社 | 薬液、薬液収容体、及び、パターン形成方法 |
AT519943A1 (de) * | 2017-04-29 | 2018-11-15 | Thonhauser Gmbh | Zusammensetzung |
CN107338126A (zh) * | 2017-06-23 | 2017-11-10 | 昆山欣谷微电子材料有限公司 | 一种水基微电子剥离和清洗液组合物 |
CN107357143B (zh) | 2017-07-25 | 2018-06-19 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
US11946148B2 (en) | 2019-01-11 | 2024-04-02 | Versum Materials Us, Llc | Hafnium oxide corrosion inhibitor |
JP7271993B2 (ja) * | 2019-02-19 | 2023-05-12 | 三菱ケミカル株式会社 | セリウム化合物除去用洗浄液、洗浄方法及び半導体ウェハの製造方法 |
TWI824299B (zh) * | 2020-09-22 | 2023-12-01 | 美商恩特葛瑞斯股份有限公司 | 蝕刻劑組合物 |
CN112430508B (zh) * | 2020-12-09 | 2021-10-19 | 淄博鑫欧瑞环保科技有限公司 | 一种消毒粉雾化装置清洁剂、应用及其清洁方法 |
WO2023004106A1 (en) * | 2021-07-23 | 2023-01-26 | Ascend Performance Materials Operations Llc | Aqueous solutions containing amino carboxylic acid chelators |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3673099A (en) | 1970-10-19 | 1972-06-27 | Bell Telephone Labor Inc | Process and composition for stripping cured resins from substrates |
BE789090A (fr) * | 1971-09-22 | 1973-01-15 | Western Electric Co | Procede et solution d'attaque de semi-conducteurs |
US4096243A (en) * | 1976-02-09 | 1978-06-20 | Clairol Incorporated | Composition for lightening hair containing an oxidizing agent and certain quaternary amines |
FR2372904A1 (fr) * | 1976-11-19 | 1978-06-30 | Ibm | Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application |
JPS60203944A (ja) * | 1984-03-28 | 1985-10-15 | Mitsubishi Gas Chem Co Inc | ポジ型フオトレジストの除去法 |
US4744834A (en) | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
US5037724A (en) * | 1988-02-25 | 1991-08-06 | Hoya Corporation | Peeling solution for photo- or electron beam-sensitive resin |
US5002687A (en) * | 1989-04-13 | 1991-03-26 | Lever Brothers Company, Division Of Conopco, Inc. | Fabric washing compositions |
ES2090118T3 (es) * | 1990-10-22 | 1996-10-16 | Procter & Gamble | Composiciones detergentes liquidas y estables que contienen blanqueador. |
TW263531B (sr) * | 1992-03-11 | 1995-11-21 | Mitsubishi Gas Chemical Co | |
JP3183310B2 (ja) * | 1992-09-25 | 2001-07-09 | 三菱瓦斯化学株式会社 | 半導体基板の洗浄液 |
US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
DE69636618T2 (de) * | 1995-07-27 | 2007-08-30 | Mitsubishi Chemical Corp. | Verfahren zur behandlung einer substratoberfläche und behandlungsmittel hierfür |
US5911836A (en) * | 1996-02-05 | 1999-06-15 | Mitsubishi Gas Chemical Company, Inc. | Method of producing semiconductor device and rinse for cleaning semiconductor device |
US6096138A (en) * | 1997-04-30 | 2000-08-01 | Bausch & Lomb Incorporated | Method for inhibiting the deposition of protein on contact lens |
US5989353A (en) * | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
US5993685A (en) * | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
JPH11121418A (ja) * | 1997-10-14 | 1999-04-30 | Kao Corp | 洗浄剤組成物及び洗浄方法 |
ES2328309T3 (es) * | 1998-05-18 | 2009-11-11 | Mallinckrodt Baker, Inc. | Composiciones alcalinas que contienen silicato para limpiar sustratos microelectronicos. |
JP2000056478A (ja) * | 1998-08-04 | 2000-02-25 | Showa Denko Kk | サイドウォール除去液 |
JP2000202617A (ja) * | 1999-01-06 | 2000-07-25 | Nippon Steel Corp | 溶融金属容器の調心・傾転装置 |
EP1039518A1 (en) * | 1999-03-24 | 2000-09-27 | Interuniversitair Micro-Elektronica Centrum Vzw | Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate |
JP4224652B2 (ja) * | 1999-03-08 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離液およびそれを用いたレジストの剥離方法 |
JP2002113431A (ja) * | 2000-10-10 | 2002-04-16 | Tokyo Electron Ltd | 洗浄方法 |
US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
JP2003005383A (ja) * | 2000-11-30 | 2003-01-08 | Tosoh Corp | レジスト剥離剤 |
TW554258B (en) * | 2000-11-30 | 2003-09-21 | Tosoh Corp | Resist stripper |
JP4267359B2 (ja) * | 2002-04-26 | 2009-05-27 | 花王株式会社 | レジスト用剥離剤組成物 |
-
2003
- 2003-05-27 AU AU2003238773A patent/AU2003238773A1/en not_active Abandoned
- 2003-05-27 CN CN2011100064160A patent/CN102061228B/zh not_active Expired - Lifetime
- 2003-05-27 RS YUP-1062/04A patent/RS50930B/sr unknown
- 2003-05-27 CN CN038130351A patent/CN1659481A/zh active Pending
- 2003-05-27 EP EP08075596A patent/EP2034365A3/en not_active Withdrawn
- 2003-05-27 KR KR1020047019578A patent/KR100958069B1/ko active IP Right Grant
- 2003-05-27 WO PCT/US2003/016828 patent/WO2003104900A2/en active Application Filing
- 2003-05-27 EP EP03734237A patent/EP1520211A2/en not_active Withdrawn
- 2003-05-27 CA CA002488735A patent/CA2488735A1/en not_active Abandoned
- 2003-05-27 BR BR0311827-4A patent/BR0311827A/pt not_active IP Right Cessation
- 2003-05-27 JP JP2004511910A patent/JP4304154B2/ja not_active Expired - Fee Related
- 2003-05-27 US US10/515,392 patent/US7419945B2/en not_active Expired - Lifetime
- 2003-05-27 PL PL373809A patent/PL208299B1/pl not_active IP Right Cessation
- 2003-06-03 TW TW092115125A patent/TWI322827B/zh not_active IP Right Cessation
- 2003-06-06 MY MYPI20032125A patent/MY139208A/en unknown
-
2004
- 2004-11-29 ZA ZA200409621A patent/ZA200409621B/en unknown
- 2004-12-06 IL IL165580A patent/IL165580A/en unknown
- 2004-12-07 IN IN2761CH2004 patent/IN2004CH02761A/en unknown
-
2005
- 2005-01-06 NO NO20050076A patent/NO20050076L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN102061228B (zh) | 2013-02-13 |
PL373809A1 (en) | 2005-09-19 |
WO2003104900A2 (en) | 2003-12-18 |
PL208299B1 (pl) | 2011-04-29 |
CN102061228A (zh) | 2011-05-18 |
KR20050019103A (ko) | 2005-02-28 |
EP2034365A3 (en) | 2009-11-11 |
JP2005529487A (ja) | 2005-09-29 |
WO2003104900A3 (en) | 2004-02-19 |
EP2034365A2 (en) | 2009-03-11 |
JP4304154B2 (ja) | 2009-07-29 |
MY139208A (en) | 2009-08-28 |
EP1520211A2 (en) | 2005-04-06 |
BR0311827A (pt) | 2005-03-29 |
CA2488735A1 (en) | 2003-12-18 |
CN1659481A (zh) | 2005-08-24 |
ZA200409621B (en) | 2006-07-26 |
RS106204A (en) | 2007-02-05 |
TW200407419A (en) | 2004-05-16 |
US7419945B2 (en) | 2008-09-02 |
IN2004CH02761A (sr) | 2006-02-10 |
US20050239673A1 (en) | 2005-10-27 |
TWI322827B (en) | 2010-04-01 |
AU2003238773A1 (en) | 2003-12-22 |
KR100958069B1 (ko) | 2010-05-17 |
IL165580A0 (en) | 2006-01-15 |
IL165580A (en) | 2009-05-04 |
NO20050076L (no) | 2005-01-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
RS50930B (sr) | Kompozicije za mikroelektronsko čišćenje koje sadrže oksidatore i organske rastvarače | |
CN1938647B (zh) | 用于蚀刻后去除基片上沉积的光致抗蚀剂和/或牺牲性抗反射物质的组合物和方法 | |
TW556054B (en) | Stripping composition | |
EP1752829B1 (en) | Polymer-stripping composition and method for removing a polymer | |
NO20040070L (no) | Mikroelektroniske rensesammensetninger inneholdende ammoniakkfrie flurodsalter | |
KR102294726B1 (ko) | 티타늄 나이트라이드를 선택적으로 에칭하기 위한 조성물 및 방법 | |
KR102420338B1 (ko) | 금속, 유전체 및 니트라이드 상용성을 가진 반사-방지 코팅 세정 및 에칭-후 잔류물 제거 조성물 | |
JP2005529363A5 (sr) | ||
US20090120457A1 (en) | Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices | |
JP4267359B2 (ja) | レジスト用剥離剤組成物 | |
CN107121901A (zh) | 一种富水基清洗液组合物 | |
CN105717756A (zh) | 具有改进的硅钝化的半水性光致抗蚀剂或半导体制造残余物剥离和清洁组合物 | |
AU2003286584A1 (en) | Aqueous phosphoric acid compositions for cleaning semiconductor devices | |
MY130650A (en) | Compositions for removing etching residue and use thereof | |
JP2008537343A (ja) | マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物 | |
SG136954A1 (en) | Composition for removing photoresist and/or etching residue from a substrate and use thereof | |
WO2007120259A2 (en) | Formulations for removing copper-containing post-etch residue from microelectronic devices | |
EP1749087A2 (en) | Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist | |
EP1512050A2 (en) | Cleaning compositions for microelectronic substrates | |
WO2010073887A1 (ja) | フォトレジスト剥離剤組成物、積層金属配線基板のフォトレジスト剥離方法及び製造方法 | |
KR101691850B1 (ko) | 포토레지스트 스트리퍼 조성물 | |
CN101548242B (zh) | 清洗厚膜光刻胶的清洗剂 | |
KR20010067436A (ko) | 제거제 조성물 | |
CN109642159A (zh) | 非水性钨相容性金属氮化物选择性蚀刻剂和清洁剂 | |
JP2006060078A (ja) | 多段階処理用剥離液およびこれを用いたエッチング残渣物の剥離方法 |