JP5217951B2 - レジスト除去方法及びその装置 - Google Patents
レジスト除去方法及びその装置 Download PDFInfo
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- JP5217951B2 JP5217951B2 JP2008297217A JP2008297217A JP5217951B2 JP 5217951 B2 JP5217951 B2 JP 5217951B2 JP 2008297217 A JP2008297217 A JP 2008297217A JP 2008297217 A JP2008297217 A JP 2008297217A JP 5217951 B2 JP5217951 B2 JP 5217951B2
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- 238000000034 method Methods 0.000 title claims description 28
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 118
- 239000000758 substrate Substances 0.000 claims description 72
- 229930195735 unsaturated hydrocarbon Natural products 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 94
- 239000010410 layer Substances 0.000 description 9
- 229930195733 hydrocarbon Natural products 0.000 description 7
- 150000002430 hydrocarbons Chemical class 0.000 description 7
- 238000004380 ashing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 4
- 239000005977 Ethylene Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 150000001345 alkine derivatives Chemical class 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000005949 ozonolysis reaction Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
2…チャンバ、13…光導入窓、14…支持部材、15…サセプタ、19…圧力計、20…開口部
3…真空ポンプ、10…排気バルブ、11…オゾンキラー
4…光源、12…反射板
6…ガスボンベ(不飽和炭化水素ガスまたは不飽和炭化水素のフッ素置換体ガスを供給する手段)
8…オゾン発生装置(オゾンガスを供給する手段)
5,7,9…配管
16…基板、17…レジスト
21…制御部
Claims (9)
- 基板の加熱が可能な反応系に大気圧よりも低圧のもとオゾンガスと共に不飽和炭化水素ガスまたは不飽和炭化水素のフッ素置換体ガスを供給して前記基板上のレジストを除去することを特徴とするレジスト除去方法。
- 前記オゾンガスは蒸気圧の差に基づきオゾン含有ガスからオゾンのみを液化分離した後に再び気化して得られる超高濃度オゾンガスであることを特徴とする請求項1に記載のレジスト除去方法。
- 前記基板をサセプタに保持し、このサセプタに赤外光を照射することで前記基板を加熱可能とすることを特徴とする請求項1または2に記載のレジスト除去方法。
- 前記基板がイオン注入レジストを有する場合、大気圧よりも低圧のもとでオゾンガスと不飽和炭化水素ガスとを供給した後に前記基板を超純水で洗浄することを特徴とする請求項1から3のいずれか1項に記載のレジスト除去方法。
- 前記基板上のレジストを除去するにあたり、前記基板の温度が90℃以下となるように前記反応系の内圧を制御することを特徴とする請求項1から4のいずれか1項に記載のレジスト除去方法。
- レジスト除去に供される基板を加熱可能に格納するチャンバと
前記チャンバに大気圧よりも低圧のもとオゾンガスを供給する手段と、
前記チャンバに大気圧よりも低圧のもと不飽和炭化水素ガスまたは不飽和炭化水素のフッ素置換体ガスを供給する手段と
を備えたこと
を特徴とするレジスト除去装置。 - 前記オゾンガスの供給は蒸気圧の差に基づきオゾン含有ガスからオゾンのみを液化分離した後に再び気化することで超高濃度オゾンガスを発生するオゾン発生装置により行うことを特徴とする請求項6に記載のレジスト除去装置。
- 前記チャンバは、
前記基板を保持するサセプタと、
このサセプタに赤外光を照射して前記基板を加熱する光源と
を備えること
を特徴とする請求項6または7に記載のレジスト除去装置。 - 前記チャンバは前記基板の温度が90℃以下となるように内圧が制御されることを特徴とする請求項6から8のいずれか1項に記載のレジスト除去装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008297217A JP5217951B2 (ja) | 2007-12-04 | 2008-11-20 | レジスト除去方法及びその装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007314078 | 2007-12-04 | ||
JP2007314078 | 2007-12-04 | ||
JP2008297217A JP5217951B2 (ja) | 2007-12-04 | 2008-11-20 | レジスト除去方法及びその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009157355A JP2009157355A (ja) | 2009-07-16 |
JP5217951B2 true JP5217951B2 (ja) | 2013-06-19 |
Family
ID=40717584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008297217A Active JP5217951B2 (ja) | 2007-12-04 | 2008-11-20 | レジスト除去方法及びその装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8574369B2 (ja) |
JP (1) | JP5217951B2 (ja) |
KR (1) | KR101214643B1 (ja) |
CN (1) | CN101889330B (ja) |
WO (1) | WO2009072402A1 (ja) |
Families Citing this family (14)
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JP4884180B2 (ja) * | 2006-11-21 | 2012-02-29 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
US9175392B2 (en) * | 2011-06-17 | 2015-11-03 | Intermolecular, Inc. | System for multi-region processing |
US9925569B2 (en) | 2012-09-25 | 2018-03-27 | Applied Materials, Inc. | Chamber cleaning with infrared absorption gas |
JP5971718B2 (ja) * | 2012-10-29 | 2016-08-17 | 株式会社明電舎 | 半導体装置製造方法 |
JP6243815B2 (ja) * | 2014-09-01 | 2017-12-06 | 信越化学工業株式会社 | 半導体装置基板の製造方法 |
CN107406609B (zh) * | 2015-03-12 | 2020-08-14 | 株式会社明电舍 | 用于改性树脂的方法和装置 |
WO2016186096A1 (ja) * | 2015-05-21 | 2016-11-24 | 株式会社明電舎 | 樹脂の改質方法及び改質装置 |
JP7092478B2 (ja) * | 2017-09-15 | 2022-06-28 | 株式会社Screenホールディングス | レジスト除去方法およびレジスト除去装置 |
KR102268455B1 (ko) | 2018-03-28 | 2021-06-23 | 메이덴샤 코포레이션 | 산화막 형성 방법 |
WO2020110406A1 (ja) | 2018-11-30 | 2020-06-04 | 株式会社明電舎 | 酸化膜形成装置 |
KR20200122486A (ko) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | 웨이퍼 클리닝 장치 |
JP6860048B2 (ja) | 2019-08-30 | 2021-04-14 | 株式会社明電舎 | 原子層堆積方法 |
KR102523437B1 (ko) | 2020-12-29 | 2023-04-18 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
JP2022187165A (ja) * | 2021-06-07 | 2022-12-19 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
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-
2008
- 2008-11-20 CN CN2008801192088A patent/CN101889330B/zh active Active
- 2008-11-20 WO PCT/JP2008/071085 patent/WO2009072402A1/ja active Application Filing
- 2008-11-20 KR KR1020107012219A patent/KR101214643B1/ko active IP Right Grant
- 2008-11-20 JP JP2008297217A patent/JP5217951B2/ja active Active
- 2008-11-20 US US12/743,275 patent/US8574369B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2009072402A1 (ja) | 2009-06-11 |
KR20100080942A (ko) | 2010-07-13 |
KR101214643B1 (ko) | 2012-12-21 |
US20100300482A1 (en) | 2010-12-02 |
JP2009157355A (ja) | 2009-07-16 |
CN101889330B (zh) | 2012-11-14 |
CN101889330A (zh) | 2010-11-17 |
US8574369B2 (en) | 2013-11-05 |
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