ATE522926T1 - Verfahren zur entfernung organischer kontamination von einer halbleiteroberfläche - Google Patents

Verfahren zur entfernung organischer kontamination von einer halbleiteroberfläche

Info

Publication number
ATE522926T1
ATE522926T1 AT98870026T AT98870026T ATE522926T1 AT E522926 T1 ATE522926 T1 AT E522926T1 AT 98870026 T AT98870026 T AT 98870026T AT 98870026 T AT98870026 T AT 98870026T AT E522926 T1 ATE522926 T1 AT E522926T1
Authority
AT
Austria
Prior art keywords
removal
organic contamination
semiconductor surface
substrate
organic
Prior art date
Application number
AT98870026T
Other languages
English (en)
Inventor
Gendt Stefan De
Peter Snee
Marc Heyns
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Application granted granted Critical
Publication of ATE522926T1 publication Critical patent/ATE522926T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT98870026T 1997-02-14 1998-02-10 Verfahren zur entfernung organischer kontamination von einer halbleiteroberfläche ATE522926T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4030997P 1997-02-14 1997-02-14
US4238997P 1997-03-25 1997-03-25
US6626197P 1997-11-20 1997-11-20

Publications (1)

Publication Number Publication Date
ATE522926T1 true ATE522926T1 (de) 2011-09-15

Family

ID=27365698

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98870026T ATE522926T1 (de) 1997-02-14 1998-02-10 Verfahren zur entfernung organischer kontamination von einer halbleiteroberfläche

Country Status (3)

Country Link
US (2) US20020088478A1 (de)
EP (1) EP0867924B1 (de)
AT (1) ATE522926T1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060151007A1 (en) * 1997-05-09 2006-07-13 Bergman Eric J Workpiece processing using ozone gas and chelating agents
US7378355B2 (en) * 1997-05-09 2008-05-27 Semitool, Inc. System and methods for polishing a wafer
US20050194356A1 (en) * 1997-05-09 2005-09-08 Semitool, Inc. Removing photoresist from a workpiece using water and ozone and a photoresist penetrating additive
US5971368A (en) 1997-10-29 1999-10-26 Fsi International, Inc. System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized
US6080531A (en) 1998-03-30 2000-06-27 Fsi International, Inc. Organic removal process
US6235641B1 (en) 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
TW467953B (en) * 1998-11-12 2001-12-11 Mitsubishi Gas Chemical Co New detergent and cleaning method of using it
JP2000147793A (ja) * 1998-11-12 2000-05-26 Mitsubishi Electric Corp フォトレジスト膜除去方法およびそのための装置
US20050229946A1 (en) * 1998-11-12 2005-10-20 Dainippon Screen Mfg. Co., Ltd. Substrate treating method and apparatus
US6878213B1 (en) 1998-12-07 2005-04-12 Scp Global Technologies, Inc. Process and system for rinsing of semiconductor substrates
US6184119B1 (en) 1999-03-15 2001-02-06 Vlsi Technology, Inc. Methods for reducing semiconductor contact resistance
US6406551B1 (en) 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
WO2001007177A1 (en) * 1999-07-23 2001-02-01 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
TW466558B (en) * 1999-09-30 2001-12-01 Purex Co Ltd Method of removing contamination adhered to surfaces and apparatus used therefor
TW480612B (en) * 1999-10-19 2002-03-21 Steag Micro Tech Gmbh Device and method for cleaning substrates
US6982006B1 (en) 1999-10-19 2006-01-03 Boyers David G Method and apparatus for treating a substrate with an ozone-solvent solution
DE10007439C2 (de) * 1999-10-19 2002-01-10 Steag Micro Tech Gmbh Vorrichtung und Verfahren zum Reinigen von Substraten
WO2001037329A1 (en) * 1999-11-15 2001-05-25 Lucent Technologies, Inc. System and method for removal of material
US6162302A (en) * 1999-11-16 2000-12-19 Agilent Technologies Method of cleaning quartz substrates using conductive solutions
DE19959558A1 (de) * 1999-12-10 2001-06-21 Messer Griesheim Gmbh Reinigung von Materialoberflächen mit Gasen
US6743301B2 (en) * 1999-12-24 2004-06-01 mFSI Ltd. Substrate treatment process and apparatus
US20030127425A1 (en) * 2002-01-07 2003-07-10 Hirohiko Nishiki System and method for etching resin with an ozone wet etching process
US20050229947A1 (en) * 2002-06-14 2005-10-20 Mykrolis Corporation Methods of inserting or removing a species from a substrate
KR100951898B1 (ko) * 2002-12-09 2010-04-09 삼성전자주식회사 포토레지스트 제거용 스트리핑 조성물 및 이를 사용한액정 표시 장치의 박막 트랜지스터 기판의 제조방법
WO2004112117A1 (en) * 2003-06-02 2004-12-23 Entegris, Inc. Method for the removal of airborne molecular contaminants using oxygen and/or water gas mixtures
US7189291B2 (en) 2003-06-02 2007-03-13 Entegris, Inc. Method for the removal of airborne molecular contaminants using oxygen gas mixtures
EP1635960A2 (de) * 2003-06-06 2006-03-22 P.C.T. Systems, Inc. Verfahren und vorrichtung zur bearbeitung von substraten mit megaschallenergie
KR100734669B1 (ko) * 2003-08-08 2007-07-02 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법 및 그 장치
US7235479B2 (en) * 2004-08-26 2007-06-26 Applied Materials, Inc. Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materials
CN100565815C (zh) * 2004-10-08 2009-12-02 西尔弗布鲁克研究有限公司 从蚀刻沟槽中移除聚合物涂层的方法
AU2005295777A1 (en) * 2004-10-13 2006-04-27 3M Innovative Properties Company Method for preparing hydrophilic polyethersulfone membrane
US20080210664A1 (en) * 2005-03-25 2008-09-04 Mitsubishi Rayon Co., Ltd. Method of Surface Treatment and Surface-Treated Article
WO2007019105A1 (en) * 2005-08-03 2007-02-15 Entegris, Inc. A transfer container
US7579282B2 (en) * 2006-01-13 2009-08-25 Freescale Semiconductor, Inc. Method for removing metal foot during high-k dielectric/metal gate etching
US7402213B2 (en) 2006-02-03 2008-07-22 Applied Materials, Inc. Stripping and removal of organic-containing materials from electronic device substrate surfaces
US20080076689A1 (en) * 2006-09-27 2008-03-27 Matthews Robert R System using ozonated acetic anhydride to remove photoresist materials
JP4952375B2 (ja) * 2007-05-23 2012-06-13 株式会社明電舎 レジスト除去方法及びその装置
US7767586B2 (en) 2007-10-29 2010-08-03 Applied Materials, Inc. Methods for forming connective elements on integrated circuits for packaging applications
JP5217951B2 (ja) * 2007-12-04 2013-06-19 株式会社明電舎 レジスト除去方法及びその装置
CN101592875B (zh) * 2008-05-29 2012-02-29 中芯国际集成电路制造(北京)有限公司 清洗方法及清洗机台
US20110130009A1 (en) * 2009-11-30 2011-06-02 Lam Research Ag Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
CA2856196C (en) 2011-12-06 2020-09-01 Masco Corporation Of Indiana Ozone distribution in a faucet
US8871108B2 (en) * 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
US20170125240A1 (en) * 2014-03-31 2017-05-04 National Institute Of Advanced Industrial Science And Technology Method for manufacturing semiconductor and method for cleaning wafer substrate
CN108463437B (zh) 2015-12-21 2022-07-08 德尔塔阀门公司 包括消毒装置的流体输送系统
US20250334884A1 (en) * 2022-05-11 2025-10-30 Lam Research Corporation Water-based pretreatment for photoresist scum removal

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US645688A (en) * 1898-08-04 1900-03-20 Nordlinger Charlton Fireworks Company Fire-cracker body.
US3923541A (en) * 1973-06-20 1975-12-02 Litton Systems Inc Vapor degreasing system
JPS614232A (ja) * 1984-06-19 1986-01-10 Nec Corp 半導体基板の洗浄方法
US5298112A (en) * 1987-08-28 1994-03-29 Kabushiki Kaisha Toshiba Method for removing composite attached to material by dry etching
EP0327263B1 (de) * 1988-01-29 1994-09-07 PROCTOR, Peter H. Haarwachstumanregung mit Nitroxyd und anderen Radikalen
US4974530A (en) * 1989-11-16 1990-12-04 Energy And Environmental Research Apparatus and methods for incineration of toxic organic compounds
US5234584A (en) * 1991-02-04 1993-08-10 United Technologies Corporation Catalytic oxidation of aqueous organic contaminants
US5244000A (en) * 1991-11-13 1993-09-14 Hughes Aircraft Company Method and system for removing contaminants
JPH05152203A (ja) * 1991-11-29 1993-06-18 Chlorine Eng Corp Ltd 基板処理方法および処理装置
US5264136A (en) * 1992-10-30 1993-11-23 Great Lakes Chemical Corporation Methods for generating residual disinfectants during the ozonization of water
KR940012061A (ko) * 1992-11-27 1994-06-22 가나이 쯔또무 유기물제거방법 및 그 방법을 이용하기 위한 유기물제거장치
US5445679A (en) * 1992-12-23 1995-08-29 Memc Electronic Materials, Inc. Cleaning of polycrystalline silicon for charging into a Czochralski growing process
US5537508A (en) * 1993-03-22 1996-07-16 Applied Materials, Inc. Method and dry vapor generator channel assembly for conveying a liquid from a liquid source to a liquid vaporizer with minimal liquid stagnation
JP2743823B2 (ja) * 1994-03-25 1998-04-22 日本電気株式会社 半導体基板のウエット処理方法
JP3320549B2 (ja) * 1994-04-26 2002-09-03 岩手東芝エレクトロニクス株式会社 被膜除去方法および被膜除去剤
DE4432738A1 (de) * 1994-09-14 1996-03-21 Siemens Ag Verfahren zum naßchemischen Entfernen von Kontaminationen auf Halbleiterkristalloberflächen
US5635022A (en) * 1996-02-06 1997-06-03 Micron Technology, Inc. Silicon oxide removal in semiconductor processing
US6551409B1 (en) * 1997-02-14 2003-04-22 Interuniversitair Microelektronica Centrum, Vzw Method for removing organic contaminants from a semiconductor surface

Also Published As

Publication number Publication date
US20020088478A1 (en) 2002-07-11
US20070077769A1 (en) 2007-04-05
EP0867924A3 (de) 1999-09-01
EP0867924B1 (de) 2011-08-31
EP0867924A2 (de) 1998-09-30

Similar Documents

Publication Publication Date Title
ATE522926T1 (de) Verfahren zur entfernung organischer kontamination von einer halbleiteroberfläche
DE69228020D1 (de) Einrichtung und Verfahren zur Kontrolle und Durchführung der Ätzung eines Wafers
ATE176337T1 (de) Entschichtungsmittel und verfahren zum entfernen von fotolacken von oberflächen
DE69301942D1 (de) Verfahren und Gerät zur Beseitigung von Oberflächenbeschädigungen in Halbleiter-Materialien mittels Plasma-Ätzen
DE69824372D1 (de) Vorrichtung zur Exposition der peripheren Fläche eines Halbleiter-Wafers
DE3679565D1 (de) Verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten.
DE59711950D1 (de) Verfahren zum anisotropen plasmaätzen verschiedener substrate
DE69426791D1 (de) Verfahren zur Bearbeitung der Oberfläche eines beschichteten Substrats
KR940016553A (ko) 에칭처리방법 및 에칭의 후처리방법 및 에칭설비
DE69734078D1 (de) Verfahren zur Reinigung einer porösen Fläche eines Halbleitersubstrats
EP0120319B1 (de) Reinigungsmittel für Wachsentfernung
DE69622824D1 (de) Verfahren und Vorrichtung zum Auflösen einer Oberflächenschicht eines Halbleitersubstrats
ATE200442T1 (de) Verfahren und vorrichtung zum entfernen von beschichtungen aus der oberfläche einer glasplatte
DE59304938D1 (de) Verfahren und Vorrichtung zum Löschen der farbführenden Schicht von der Oberfläche einer bebilderten Druckform
ID17230A (id) Metode memproses lapisan bawah
DE69119365D1 (de) Verfahren zur Analyse von Metallverunreinigungen in dem oberflächigen Oxidfilm eines Halbleitersubstrats
DE59700621D1 (de) Verfahren zur materialabtragenden Bearbeitung der Kante einer Halbleiterscheibe
FI934674A7 (fi) Etsausmenetelmä piisubstraattia varten
KR960012348A (ko) 반도체 결정표면 상의 오염을 제거하기 위한 방법
DE69419186D1 (de) Verfahren zur Ätzung eines halbleitenden Substrats
DE69012319D1 (de) Verfahren zur entfernung von beschichtungen empfindlicher substrate und werfmedia dazu.
DE69224917D1 (de) Methode und vorrichtung zur verhinderung von kontamination eines substrates oder einer substratoberfläche
US4370197A (en) Process for etching chrome
DE69632553D1 (de) Verfahren zum Entfernen partikulärer Verunreinigungen von der Oberfläche einer Halbleiterscheibe
EP0224843A2 (de) Entwickelverfahren für negative Photolacke

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties