ATE176337T1 - Entschichtungsmittel und verfahren zum entfernen von fotolacken von oberflächen - Google Patents

Entschichtungsmittel und verfahren zum entfernen von fotolacken von oberflächen

Info

Publication number
ATE176337T1
ATE176337T1 AT91310208T AT91310208T ATE176337T1 AT E176337 T1 ATE176337 T1 AT E176337T1 AT 91310208 T AT91310208 T AT 91310208T AT 91310208 T AT91310208 T AT 91310208T AT E176337 T1 ATE176337 T1 AT E176337T1
Authority
AT
Austria
Prior art keywords
paints
photographic
removal
stripping composition
decoating agent
Prior art date
Application number
AT91310208T
Other languages
English (en)
Inventor
Wai Mun Lee
Original Assignee
Ekc Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24443399&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE176337(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ekc Technology Inc filed Critical Ekc Technology Inc
Application granted granted Critical
Publication of ATE176337T1 publication Critical patent/ATE176337T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00Chemical paint or ink removers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2003Alcohols; Phenols
    • C11D3/2041Dihydric alcohols
    • C11D3/2058Dihydric alcohols aromatic
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2003Alcohols; Phenols
    • C11D3/2065Polyhydric alcohols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2075Carboxylic acids-salts thereof
    • C11D3/2086Hydroxy carboxylic acids-salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/30Amines; Substituted amines ; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/34Organic compounds containing sulfur
    • C11D3/3427Organic compounds containing sulfur containing thiol, mercapto or sulfide groups, e.g. thioethers or mercaptales
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/34Organic compounds containing sulfur
    • C11D3/3472Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43Solvents
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/261Alcohols; Phenols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/261Alcohols; Phenols
    • C11D7/262Alcohols; Phenols fatty or with at least 8 carbon atoms in the alkyl or alkenyl chain
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/263Ethers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/265Carboxylic acids or salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/267Heterocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3218Alkanolamines or alkanolimines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3227Ethers thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3245Aminoacids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3254Esters or carbonates thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3263Amides or imides
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3272Urea, guanidine or derivatives thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3281Heterocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/34Organic compounds containing sulfur
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5013Organic solvents containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10Other heavy metals
    • C23G1/103Other heavy metals copper or alloys of copper
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23GCLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20Other heavy metals
    • C23G1/205Other heavy metals refractory metals
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/24Mineral surfaces, e.g. stones, frescoes, plasters, walls or concretes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Paints Or Removers (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
AT91310208T 1990-11-05 1991-11-05 Entschichtungsmittel und verfahren zum entfernen von fotolacken von oberflächen ATE176337T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/610,044 US5279771A (en) 1990-11-05 1990-11-05 Stripping compositions comprising hydroxylamine and alkanolamine

Publications (1)

Publication Number Publication Date
ATE176337T1 true ATE176337T1 (de) 1999-02-15

Family

ID=24443399

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91310208T ATE176337T1 (de) 1990-11-05 1991-11-05 Entschichtungsmittel und verfahren zum entfernen von fotolacken von oberflächen

Country Status (8)

Country Link
US (10) US5279771A (de)
EP (1) EP0485161B1 (de)
JP (1) JP2691952B2 (de)
AT (1) ATE176337T1 (de)
DE (1) DE69130823T2 (de)
DK (1) DK0485161T3 (de)
ES (1) ES2129403T3 (de)
GR (1) GR3030070T3 (de)

Families Citing this family (255)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US20040018949A1 (en) * 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US6000411A (en) * 1990-11-05 1999-12-14 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US6492311B2 (en) 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US6121217A (en) 1990-11-05 2000-09-19 Ekc Technology, Inc. Alkanolamine semiconductor process residue removal composition and process
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6187730B1 (en) * 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US6242400B1 (en) 1990-11-05 2001-06-05 Ekc Technology, Inc. Method of stripping resists from substrates using hydroxylamine and alkanolamine
US5753601A (en) * 1991-01-25 1998-05-19 Ashland Inc Organic stripping composition
US5988186A (en) * 1991-01-25 1999-11-23 Ashland, Inc. Aqueous stripping and cleaning compositions
US5496491A (en) * 1991-01-25 1996-03-05 Ashland Oil Company Organic stripping composition
US5556482A (en) * 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
US5928430A (en) * 1991-01-25 1999-07-27 Advanced Scientific Concepts, Inc. Aqueous stripping and cleaning compositions containing hydroxylamine and use thereof
JP3095296B2 (ja) * 1991-12-19 2000-10-03 株式会社日立製作所 レジスト剥離方法、これを用いた薄膜回路素子の製造方法、および、レジスト剥離液
JP3048207B2 (ja) * 1992-07-09 2000-06-05 イー.ケー.シー.テクノロジー.インコーポレイテッド 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US7144848B2 (en) * 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
DE4303923A1 (de) * 1993-02-10 1994-08-11 Microparts Gmbh Verfahren zum Beseitigen von Kunststoffen aus Mikrostrukturen
US7144849B2 (en) * 1993-06-21 2006-12-05 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US5411595A (en) * 1993-07-13 1995-05-02 Mcgean-Rohco, Inc. Post-etch, printed circuit board cleaning process
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5419779A (en) * 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
TW256929B (de) * 1993-12-29 1995-09-11 Hirama Rika Kenkyusho Kk
US5753421A (en) * 1994-03-31 1998-05-19 Tokyo Ohka Kogya Co., Ltd. Stock developer solutions for photoresists and developer solutions prepared by dilution thereof
US5597678A (en) * 1994-04-18 1997-01-28 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5472830A (en) * 1994-04-18 1995-12-05 Ocg Microelectronic Materials, Inc. Non-corrosion photoresist stripping composition
US5545353A (en) * 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
US5643407A (en) * 1994-09-30 1997-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Solving the poison via problem by adding N2 plasma treatment after via etching
US5567574A (en) * 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US5597420A (en) * 1995-01-17 1997-01-28 Ashland Inc. Stripping composition having monoethanolamine
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
US5769959A (en) * 1995-04-04 1998-06-23 Mitsubishi Chemical Corporation Process for removing insoluable N-vinyl amide polymer from equipment
US5507978A (en) * 1995-05-08 1996-04-16 Ocg Microelectronic Materials, Inc. Novolak containing photoresist stripper composition
US5561105A (en) * 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
US5603849A (en) * 1995-11-15 1997-02-18 Micron Technology, Inc. Methods and compositions for cleaning silicon wafers with a dynamic two phase liquid system with hydrofluoric acid
US5665688A (en) * 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
US5648324A (en) * 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
JP2950407B2 (ja) * 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法
US5909744A (en) * 1996-01-30 1999-06-08 Silicon Valley Chemlabs, Inc. Dibasic ester stripping composition
US6511547B1 (en) 1996-01-30 2003-01-28 Siliconvalley Chemlabs, Inc. Dibasic ester stripping composition
US5741368A (en) * 1996-01-30 1998-04-21 Silicon Valley Chemlabs Dibasic ester stripping composition
US5911836A (en) 1996-02-05 1999-06-15 Mitsubishi Gas Chemical Company, Inc. Method of producing semiconductor device and rinse for cleaning semiconductor device
US6015467A (en) * 1996-03-08 2000-01-18 Tokyo Ohka Kogyo Co., Ltd. Method of removing coating from edge of substrate
JP3614242B2 (ja) * 1996-04-12 2005-01-26 三菱瓦斯化学株式会社 フォトレジスト剥離剤及び半導体集積回路の製造方法
US6323168B1 (en) * 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US7534752B2 (en) * 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US5954097A (en) * 1996-08-14 1999-09-21 The Procter & Gamble Company Papermaking fabric having bilaterally alternating tie yarns
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US5780406A (en) * 1996-09-06 1998-07-14 Honda; Kenji Non-corrosive cleaning composition for removing plasma etching residues
US5989353A (en) * 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5709756A (en) * 1996-11-05 1998-01-20 Ashland Inc. Basic stripping and cleaning composition
WO1998022568A1 (en) * 1996-11-22 1998-05-28 Advanced Chemical Systems International, Inc. Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6224785B1 (en) 1997-08-29 2001-05-01 Advanced Technology Materials, Inc. Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
US5780363A (en) * 1997-04-04 1998-07-14 International Business Machines Coporation Etching composition and use thereof
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition
US6268323B1 (en) 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
TW539918B (en) 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6558739B1 (en) * 1997-05-30 2003-05-06 Chartered Semiconductor Manufacturing Ltd. Titanium nitride/titanium tungsten alloy composite barrier layer for integrated circuits
US5935869A (en) * 1997-07-10 1999-08-10 International Business Machines Corporation Method of planarizing semiconductor wafers
US6068879A (en) 1997-08-26 2000-05-30 Lsi Logic Corporation Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing
SG71147A1 (en) 1997-08-29 2000-03-21 Dow Corning Toray Silicone Method for forming insulating thin films
EP0907203A3 (de) 1997-09-03 2000-07-12 Siemens Aktiengesellschaft Strukturierungsverfahren
US5965465A (en) * 1997-09-18 1999-10-12 International Business Machines Corporation Etching of silicon nitride
US6033993A (en) * 1997-09-23 2000-03-07 Olin Microelectronic Chemicals, Inc. Process for removing residues from a semiconductor substrate
JP2001520267A (ja) * 1997-10-14 2001-10-30 アドバンスド・ケミカル・システムズ・インターナショナル・インコーポレーテッド 半導体基板からの残留物をストリッピングするためのホウ酸アンモニウム含有組成物
JP3773227B2 (ja) 1997-10-16 2006-05-10 東京応化工業株式会社 レジスト用剥離液組成物およびこれを用いたレジスト剥離方法
JP3953600B2 (ja) * 1997-10-28 2007-08-08 シャープ株式会社 レジスト膜剥離剤及びそれを用いた薄膜回路素子の製造方法
US6150282A (en) * 1997-11-13 2000-11-21 International Business Machines Corporation Selective removal of etching residues
US6033996A (en) * 1997-11-13 2000-03-07 International Business Machines Corporation Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
GB2369687B (en) * 1997-11-21 2002-10-09 Samsung Electronics Co Ltd Method of manufacturing semiconductor devices
US6159666A (en) * 1998-01-14 2000-12-12 Fijitsu Limited Environmentally friendly removal of photoresists used in wet etchable polyimide processes
US6117795A (en) * 1998-02-12 2000-09-12 Lsi Logic Corporation Use of corrosion inhibiting compounds in post-etch cleaning processes of an integrated circuit
US6231677B1 (en) 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
US6432209B2 (en) 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
JP3426494B2 (ja) * 1998-04-02 2003-07-14 沖電気工業株式会社 半導体装置の製造方法
US6009888A (en) * 1998-05-07 2000-01-04 Chartered Semiconductor Manufacturing Company, Ltd. Photoresist and polymer removal by UV laser aqueous oxidant
JPH11323394A (ja) 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
PT1105778E (pt) * 1998-05-18 2009-09-23 Mallinckrodt Baker Inc Composições alcalinas contendo silicato para limpeza de substratos microelectrónicos
US6423646B1 (en) * 1998-06-04 2002-07-23 Vanguard International Semiconductor Corporation Method for removing etch-induced polymer film and damaged silicon layer from a silicon surface
US6319884B2 (en) * 1998-06-16 2001-11-20 International Business Machines Corporation Method for removal of cured polyimide and other polymers
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US6368421B1 (en) 1998-07-10 2002-04-09 Clariant Finance (Bvi) Limited Composition for stripping photoresist and organic materials from substrate surfaces
US6117796A (en) * 1998-08-13 2000-09-12 International Business Machines Corporation Removal of silicon oxide
US6200891B1 (en) 1998-08-13 2001-03-13 International Business Machines Corporation Removal of dielectric oxides
US6162738A (en) * 1998-09-01 2000-12-19 Micron Technology, Inc. Cleaning compositions for high dielectric structures and methods of using same
JP4075228B2 (ja) * 1998-09-09 2008-04-16 株式会社デンソー 半導体装置の製造方法
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
GB2342727A (en) * 1998-10-12 2000-04-19 Ekc Technology Ltd Composition to remove resists and tp inhibit titanium corrosion
TW411531B (en) * 1998-10-13 2000-11-11 Mosel Vitelic Inc Method capable of preventing the metal layer of a semiconductor chip from being corroded
US6277747B1 (en) * 1998-11-09 2001-08-21 Sony Corporation Method for removal of etch residue immediately after etching a SOG layer
TW467953B (en) * 1998-11-12 2001-12-11 Mitsubishi Gas Chemical Co New detergent and cleaning method of using it
US6214717B1 (en) 1998-11-16 2001-04-10 Taiwan Semiconductor Manufacturing Company Method for adding plasma treatment on bond pad to prevent bond pad staining problems
US6103680A (en) * 1998-12-31 2000-08-15 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues
KR100286860B1 (ko) * 1998-12-31 2001-07-12 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
US6375859B1 (en) 1999-02-04 2002-04-23 International Business Machines Corporation Process for resist clean up of metal structures on polyimide
JP4224651B2 (ja) * 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US6984482B2 (en) * 1999-06-03 2006-01-10 Hynix Semiconductor Inc. Top-coating composition for photoresist and process for forming fine pattern using the same
TWI270749B (en) 1999-06-07 2007-01-11 Tokyo Ohka Kogyo Co Ltd Photoresist stripping liquid composition and a method of stripping photoresists using the same
JP3287406B2 (ja) * 1999-06-11 2002-06-04 日本電気株式会社 半導体装置の製造方法
WO2001046999A2 (en) 1999-11-02 2001-06-28 Tokyo Electron Limited Method and apparatus for supercritical processing of a workpiece
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6531436B1 (en) 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
US6475966B1 (en) 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
TW558736B (en) * 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
GB0009112D0 (en) * 2000-04-12 2000-05-31 Ekc Technology Ltd Inhibition of titanium corrosion
IL152376A0 (en) 2000-04-25 2003-05-29 Tokyo Electron Ltd Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
KR100363271B1 (ko) * 2000-06-12 2002-12-05 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
WO2002004233A1 (en) 2000-07-10 2002-01-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US7456140B2 (en) * 2000-07-10 2008-11-25 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6645930B1 (en) 2000-07-10 2003-11-11 Ekc Technology, Inc. Clean room wipes for neutralizing caustic chemicals
WO2002019390A2 (en) * 2000-08-31 2002-03-07 Chemtrace, Inc. Cleaning of semiconductor process equipment chamber parts using organic solvents
US6951221B2 (en) * 2000-09-22 2005-10-04 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
EP1211563B1 (de) 2000-11-30 2011-12-21 Tosoh Corporation Fotolackentfernerzusammensetzung
US6656894B2 (en) 2000-12-07 2003-12-02 Ashland Inc. Method for cleaning etcher parts
TW573217B (en) 2000-12-27 2004-01-21 Sumitomo Chemical Co Remover composition
CN100343361C (zh) * 2001-03-27 2007-10-17 高级技术材料公司 含有铜缓蚀剂、用于清洗半导体衬底上的无机残余物的水性清洗组合物
WO2002095500A1 (en) 2001-05-21 2002-11-28 Dongjin Semichem Co., Ltd. Resist remover composition
WO2002095502A1 (en) 2001-05-21 2002-11-28 Dongjin Semichem Co., Ltd. Resist remover composition
KR100468714B1 (ko) * 2001-07-03 2005-01-29 삼성전자주식회사 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법
KR100569533B1 (ko) * 2001-10-25 2006-04-07 주식회사 하이닉스반도체 포토레지스트 세정용 조성물
JP3787085B2 (ja) 2001-12-04 2006-06-21 関東化学株式会社 フォトレジスト残渣除去液組成物
CN1240816C (zh) * 2001-12-12 2006-02-08 海力士半导体有限公司 除去光致抗蚀剂的洗涤液
US20030118948A1 (en) * 2001-12-21 2003-06-26 Rohit Grover Method of etching semiconductor material to achieve structure suitable for optics
US20040168818A1 (en) * 2002-01-17 2004-09-02 Powerware Corporation System for detecting defective battery packs
JP2005516405A (ja) * 2002-01-25 2005-06-02 東京エレクトロン株式会社 超臨界二酸化炭素プロセス中の汚染物の形成を低減する方法
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
WO2003064581A1 (en) * 2002-01-28 2003-08-07 Ekc Technology, Inc. Methods and compositions for chemically treating a substrate using foam technology
US6928746B2 (en) * 2002-02-15 2005-08-16 Tokyo Electron Limited Drying resist with a solvent bath and supercritical CO2
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
AU2003220039A1 (en) * 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US20040072706A1 (en) * 2002-03-22 2004-04-15 Arena-Foster Chantal J. Removal of contaminants using supercritical processing
JP4252758B2 (ja) * 2002-03-22 2009-04-08 関東化学株式会社 フォトレジスト残渣除去液組成物
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
AU2003225178A1 (en) * 2002-04-24 2003-11-10 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
US7252718B2 (en) * 2002-05-31 2007-08-07 Ekc Technology, Inc. Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture
JP4443864B2 (ja) * 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
JP2004083610A (ja) * 2002-08-22 2004-03-18 Fuji Photo Film Co Ltd インクセット、インクカートリッジ、記録方法、プリンター及び記録物
JP2004101849A (ja) * 2002-09-09 2004-04-02 Mitsubishi Gas Chem Co Inc 洗浄剤組成物
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
US7037852B2 (en) * 2002-09-26 2006-05-02 Samsung Electronics Co., Ltd. Composition for stripping photoresist and method of preparing the same
US6969688B2 (en) * 2002-10-08 2005-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Wet etchant composition and method for etching HfO2 and ZrO2
ATE405622T1 (de) * 2002-10-22 2008-09-15 Ekc Technology Inc Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
KR20040037643A (ko) * 2002-10-29 2004-05-07 동우 화인켐 주식회사 후-스트립 세정제 조성물 및 그를 이용한 포토레지스트스트립 공정 후의 반도체 소자 또는 액정표시소자의 세정방법
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US8192555B2 (en) * 2002-12-31 2012-06-05 Micron Technology, Inc. Non-chemical, non-optical edge bead removal process
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
US20040217006A1 (en) * 2003-03-18 2004-11-04 Small Robert J. Residue removers for electrohydrodynamic cleaning of semiconductors
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
US20040256354A1 (en) * 2003-06-18 2004-12-23 Raluca Dinu Method of removing etch veils from microstructures
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7427361B2 (en) * 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
US7344988B2 (en) * 2003-10-27 2008-03-18 Dupont Air Products Nanomaterials Llc Alumina abrasive for chemical mechanical polishing
EP1692572A2 (de) * 2003-10-29 2006-08-23 Mallinckrodt Baker, Inc. Alkali-, nach-plasmaätz-/aschenrestentfernungsmittel und fotoresist-entfernungszusammensetzungen mit metallhalogenid-korrosionsinhibitoren
US6946396B2 (en) * 2003-10-30 2005-09-20 Nissan Chemical Indusries, Ltd. Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer
US7419911B2 (en) * 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
JP4326928B2 (ja) * 2003-12-09 2009-09-09 株式会社東芝 フォトレジスト残渣除去液組成物及び該組成物を用いる半導体回路素子の製造方法
US7432233B2 (en) * 2003-12-18 2008-10-07 Interuniversitair Microelektronica Centrum (Imec) Composition and method for treating a semiconductor substrate
KR20050071150A (ko) * 2003-12-31 2005-07-07 동부아남반도체 주식회사 컬러 포토레지스트 제거 방법
US7919445B2 (en) 2004-03-30 2011-04-05 Basf Aktiengesellschaft Aqueous solution for removing post-etch residue
KR100663624B1 (ko) * 2004-04-29 2007-01-02 엘지.필립스 엘시디 주식회사 액정표시장치 제조방법
WO2006009668A1 (en) * 2004-06-16 2006-01-26 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
JP4576927B2 (ja) 2004-08-19 2010-11-10 東ソー株式会社 洗浄用組成物及び洗浄方法
JP4776191B2 (ja) * 2004-08-25 2011-09-21 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US20060094613A1 (en) * 2004-10-29 2006-05-04 Lee Wai M Compositions and processes for photoresist stripping and residue removal in wafer level packaging
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
TWI538033B (zh) * 2005-01-27 2016-06-11 安堤格里斯公司 半導體基板處理用之組成物
US20060183654A1 (en) * 2005-02-14 2006-08-17 Small Robert J Semiconductor cleaning using ionic liquids
US7923424B2 (en) * 2005-02-14 2011-04-12 Advanced Process Technologies, Llc Semiconductor cleaning using superacids
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US20060185693A1 (en) * 2005-02-23 2006-08-24 Richard Brown Cleaning step in supercritical processing
JP4988165B2 (ja) 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
US7741257B2 (en) * 2005-03-15 2010-06-22 Ecolab Inc. Dry lubricant for conveying containers
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7442636B2 (en) * 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) * 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7425652B2 (en) * 2005-07-27 2008-09-16 Lyondell Chemical Technology, L.P. Preparation of alkanolamines
WO2007021085A1 (en) 2005-08-13 2007-02-22 Techno Semichem Co., Ltd. Photoresist stripper composition for semiconductor manufacturing
US7879782B2 (en) * 2005-10-13 2011-02-01 Air Products And Chemicals, Inc. Aqueous cleaning composition and method for using same
US20070123049A1 (en) * 2005-11-17 2007-05-31 Kao-Su Huang Semiconductor process and method for removing condensed gaseous etchant residues on wafer
TW200734836A (en) * 2006-03-13 2007-09-16 Basf Electronic Materials Taiwan Ltd Cleaning composition for removing post-dry-etch residues
JP5224228B2 (ja) * 2006-09-15 2013-07-03 Nltテクノロジー株式会社 薬液を用いた基板処理方法
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US20080092806A1 (en) * 2006-10-19 2008-04-24 Applied Materials, Inc. Removing residues from substrate processing components
JP4642001B2 (ja) * 2006-10-24 2011-03-02 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去液組成物
TWI572746B (zh) * 2006-12-21 2017-03-01 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
TWI338026B (en) * 2007-01-05 2011-03-01 Basf Electronic Materials Taiwan Ltd Composition and method for stripping organic coatings
JP5063138B2 (ja) * 2007-02-23 2012-10-31 株式会社Sokudo 基板現像方法および現像装置
JP2010538167A (ja) * 2007-09-06 2010-12-09 イー.ケー.シー.テクノロジー.インコーポレーテッド 銅表面を処理するための組成物およびその方法
US20090120901A1 (en) * 2007-11-09 2009-05-14 Pixeloptics Inc. Patterned electrodes with reduced residue
JP5813280B2 (ja) * 2008-03-19 2015-11-17 富士フイルム株式会社 半導体デバイス用洗浄液、および洗浄方法
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
CN101787335A (zh) * 2009-01-22 2010-07-28 巴斯夫公司 用于化学机械抛光后清洗的组合物
US20120021961A1 (en) * 2009-01-22 2012-01-26 Basf Se Composition for post chemical-mechanical polishing cleaning
JP2010222552A (ja) * 2009-02-24 2010-10-07 Sumitomo Chemical Co Ltd 洗浄用組成物及びそれを用いる液晶性ポリエステル製造装置の洗浄方法
JP2012519234A (ja) * 2009-02-26 2012-08-23 ピーピーティー リサーチ,インク. 腐食防止組成物
US8754021B2 (en) * 2009-02-27 2014-06-17 Advanced Technology Materials, Inc. Non-amine post-CMP composition and method of use
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
JP5646882B2 (ja) * 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8058221B2 (en) 2010-04-06 2011-11-15 Samsung Electronics Co., Ltd. Composition for removing a photoresist and method of manufacturing semiconductor device using the composition
TWI548738B (zh) 2010-07-16 2016-09-11 安堤格里斯公司 用於移除蝕刻後殘餘物之水性清潔劑
JP2012058273A (ja) 2010-09-03 2012-03-22 Kanto Chem Co Inc フォトレジスト残渣およびポリマー残渣除去液組成物
WO2012056911A1 (ja) 2010-10-29 2012-05-03 大日本印刷株式会社 インプリント用モールドの洗浄方法と洗浄装置およびインプリント用モールドの製造方法
CN102540776B (zh) * 2010-12-30 2013-07-03 苏州瑞红电子化学品有限公司 一种去除半导体工艺中残留光刻胶的剥离液
US8889609B2 (en) 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
FR2976290B1 (fr) 2011-06-09 2014-08-15 Jerome Daviot Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
WO2013091177A1 (en) * 2011-12-20 2013-06-27 Rhodia (China) Co., Ltd. Use of phenol compounds as activator for metal surface corrosion
EP2798669B1 (de) 2011-12-28 2021-03-31 Entegris, Inc. Zusammensetzungen und verfahren zum selektiven ätzen von titannitrid
US20130252406A1 (en) * 2012-03-23 2013-09-26 Evident Technologies, Inc. Techniques for drying and annealing thermoelectric powders
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US10189712B2 (en) 2013-03-15 2019-01-29 International Business Machines Corporation Oxidation of porous, carbon-containing materials using fuel and oxidizing agent
WO2015084921A1 (en) * 2013-12-06 2015-06-11 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
KR102463341B1 (ko) 2015-01-13 2022-11-04 씨엠씨 머티리얼즈, 인코포레이티드 Cmp 후 반도체 웨이퍼 세정용 세정 조성물 및 방법
KR20160094640A (ko) 2015-02-02 2016-08-10 동우 화인켐 주식회사 티타늄막 식각액 조성물
US9797048B2 (en) * 2015-03-31 2017-10-24 The Boeing Company Stripping solution for zinc/nickel alloy plating from metal substrate
JP6742748B2 (ja) 2016-02-17 2020-08-19 株式会社Screenホールディングス 現像ユニット、基板処理装置、現像方法および基板処理方法
CN106289913A (zh) * 2016-09-24 2017-01-04 中海油常州涂料化工研究院有限公司 一种用于无机富锌涂层表面腐蚀产物的脱膜液及其制备方法和使用方法
CN107820584B (zh) * 2016-09-30 2019-10-18 松下知识产权经营株式会社 抗蚀剂剥离液
KR102356356B1 (ko) 2017-05-31 2022-01-28 에스케이하이닉스 주식회사 세정 조성물 및 이를 이용하는 전자 장치의 제조방법
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
CN109407478A (zh) * 2018-12-26 2019-03-01 李晨阳 Poly-270剥离清洗液及其制备方法
CN110396315B (zh) * 2019-07-22 2020-11-10 深圳市华星光电技术有限公司 改性修复液、制备方法及修复色阻的方法
EP4034629A4 (de) 2019-09-27 2023-10-25 Versum Materials US, LLC Zusammensetzungen zur entfernung von ätzrückständen, verfahren zu deren verwendung und verwendung davon
JP7676957B2 (ja) 2021-05-28 2025-05-15 富士電機株式会社 半導体装置の製造方法
JP2024169105A (ja) 2023-05-25 2024-12-05 東京応化工業株式会社 洗浄液、並びに、基板の洗浄方法及び半導体素子の製造方法
JP2024169104A (ja) 2023-05-25 2024-12-05 東京応化工業株式会社 洗浄液、並びに、基板の洗浄方法及び半導体素子の製造方法

Family Cites Families (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30714A (en) * 1860-11-27 Improvement in breech-loading fire-arms
US30796A (en) * 1860-12-04 Improvement in cultivators
US3160539A (en) * 1958-09-08 1964-12-08 Trw Semiconductors Inc Surface treatment of silicon
USRE30796E (en) * 1962-07-23 1981-11-17 The Dow Chemical Co. Scale removal, ferrous metal passivation and compositions therefor
USRE30714E (en) * 1965-10-18 1981-08-18 The Dow Chemical Company Removal of copper containing incrustations from ferrous surfaces
GB1144481A (en) * 1965-11-01 1969-03-05 Eastman Kodak Co Processing photographic materials
US3530186A (en) * 1966-11-14 1970-09-22 Koppers Co Inc Process for the preparation of catechol and 2,2' - dihydroxydiphenylamine or lower alkyl ethers thereof
US3582401A (en) * 1967-11-15 1971-06-01 Mallinckrodt Chemical Works Photosensitive resist remover compositions and methods
GB1273150A (en) * 1968-10-21 1972-05-03 Associated Semiconductor Mft Improvements in and relating to methods of etching semiconductor body surfaces
DE1908625B2 (de) * 1969-02-21 1971-08-12 Bergische Metallwarenfabrik Dillen berg & Co KG, 5601 Gruiten Bad zu elektrolytischen abloesen von metallueberzuegen von grundkoerpern aus rostfreiem stahl
US3615825A (en) * 1969-02-24 1971-10-26 Basf Wyandotte Corp Paint-stripping composition
US3640810A (en) * 1969-12-10 1972-02-08 Ppg Industries Inc Steam rinsing of electrocoated articles
US3753933A (en) * 1972-04-24 1973-08-21 Dow Chemical Co Polyurethane foams from solid foaming agents
US3972839A (en) * 1973-01-17 1976-08-03 Oxy Metal Industries Corporation Amine stripping composition and method
US3914185A (en) * 1973-03-15 1975-10-21 Colgate Palmolive Co Method of preparing liquid detergent compositions
JPS5552379Y2 (de) 1975-04-10 1980-12-05
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
US4067690A (en) * 1976-05-04 1978-01-10 Chemed Corporation Boiler water treatment
US4078102A (en) 1976-10-29 1978-03-07 International Business Machines Corporation Process for stripping resist layers from substrates
US4242218A (en) * 1976-11-08 1980-12-30 Allied Chemical Corporation Phenol-free photoresist stripper
US4165294A (en) * 1976-11-08 1979-08-21 Allied Chemical Corporation Phenol-free and chlorinated hydrocarbon-free photoresist stripper comprising surfactant and hydrotropic aromatic sulfonic acids
JPS5367212A (en) 1976-11-26 1978-06-15 Taisei Corp Method of locally compressing and reinforcing of concrete members
US4105576A (en) * 1977-02-04 1978-08-08 J. T. Baker Chemical Company Spill control composition and use thereof
US4170478A (en) 1977-06-06 1979-10-09 Eastman Kodak Company Photographic color developer compositions
JPS5479131A (en) * 1977-12-07 1979-06-23 Okuno Chem Ind Co Electrolytic bath for removing electrodeposited metal on stainless steel substrate
US4155866A (en) * 1978-04-24 1979-05-22 International Business Machines Corporation Method of controlling silicon wafer etching rates-utilizing a diazine catalyzed etchant
US4221674A (en) * 1979-03-09 1980-09-09 Allied Chemical Corporation Organic sulfonic acid stripping composition and method with nitrile and fluoride metal corrosion inhibitor system
US4187140A (en) * 1978-10-11 1980-02-05 International Business Machines Corporation Method for etching silicon and a residue and oxidation resistant etchant therefor
US4289091A (en) * 1978-12-13 1981-09-15 Caterpillar Tractor Co. Closed apparatus for coating the interior of a tank
US4238275A (en) * 1978-12-29 1980-12-09 International Business Machines Corporation Pyrocatechol-amine-water solution for the determination of defects
US4276186A (en) * 1979-06-26 1981-06-30 International Business Machines Corporation Cleaning composition and use thereof
US4279870A (en) * 1979-07-23 1981-07-21 Gte Laboratories Incorporated Liquid-liquid extraction process for the recovery of tungsten from low level sources
US4264716A (en) * 1979-09-10 1981-04-28 Eastman Kodak Company Photographic color developer compositions
US4278635A (en) * 1979-10-12 1981-07-14 Chemed Corporation Method for deoxygenation of water
US4284435A (en) * 1979-11-28 1981-08-18 S. C. Johnson & Son, Inc. Method for spray cleaning painted surfaces
US4276185A (en) * 1980-02-04 1981-06-30 Halliburton Company Methods and compositions for removing deposits containing iron sulfide from surfaces comprising basic aqueous solutions of particular chelating agents
US4268406A (en) * 1980-02-19 1981-05-19 The Procter & Gamble Company Liquid detergent composition
US4282111A (en) * 1980-04-28 1981-08-04 Betz Laboratories, Inc. Hydroquinone as an oxygen scavenger in an aqueous medium
NO811717L (no) * 1980-05-22 1981-11-23 Gubela Hans Erich Syntetisk kjemikalieabsorbsjonsmiddel.
US4289645A (en) * 1980-07-14 1981-09-15 Betz Laboratories, Inc. Hydroquinone and mu-amine compositions
US4350606A (en) * 1980-10-03 1982-09-21 Dearborn Chemical Company Composition and method for inhibiting corrosion
US4363741A (en) 1980-12-19 1982-12-14 Borden, Inc. Automotive cooling system cleaner
JPS57194265A (en) 1981-05-27 1982-11-29 Mitsubishi Heavy Ind Ltd Electrolytic treatment method
US4428871A (en) 1981-09-23 1984-01-31 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4395479A (en) 1981-09-23 1983-07-26 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4395348A (en) 1981-11-23 1983-07-26 Ekc Technology, Inc. Photoresist stripping composition and method
EP0093536B1 (de) * 1982-04-29 1986-10-08 EASTMAN KODAK COMPANY (a New Jersey corporation) Zusammensetzungen eines stabilisierten farbphotographischen Entwicklers und Verfahren zu seiner Verwendung
US4401747A (en) 1982-09-02 1983-08-30 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4403029A (en) 1982-09-02 1983-09-06 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4425380A (en) * 1982-11-19 1984-01-10 Kollmorgen Technologies Corporation Hole cleaning process for printed circuit boards using permanganate and caustic treating solutions
US4509989A (en) * 1983-03-25 1985-04-09 United States Steel Corporation Cleaning method for removing sulfur containing deposits from coke oven gas lines
JPS59202201A (ja) * 1983-04-28 1984-11-16 Shin Etsu Chem Co Ltd 重合体スケ−ル付着防止剤およびそれを使用する方法
EP0132765B1 (de) * 1983-07-22 1988-04-20 Kao Corporation Metallreinigungszusammensetzungen
US4737195A (en) * 1983-11-18 1988-04-12 Amchem Products Activator-accelerator mixtures for alkaline paint stripper compositions
DE3584128D1 (de) * 1984-03-02 1991-10-24 Minnesota Mining & Mfg Photographische gerbende entwicklerzusammensetzung.
CA1210930A (en) * 1984-04-18 1986-09-09 Harvey W. Thompson Composition and method for deoxygenation
US4549968A (en) * 1984-05-18 1985-10-29 Betz Laboratories, Inc. Method of utilizing improved stability oxygen scavenger compositions
US4554049A (en) * 1984-06-07 1985-11-19 Enthone, Incorporated Selective nickel stripping compositions and method of stripping
US4732887A (en) * 1984-10-12 1988-03-22 Asahi Kasei Kogyo Kabushiki Kaisha Composite porous material, process for production and separation of metallic element
SU1244211A1 (ru) 1984-11-22 1986-07-15 Киевский Ордена Трудового Красного Знамени Технологический Институт Пищевой Промышленности Электролит дл осаждени сплава на основе вольфрама и никел
DE3501675A1 (de) * 1985-01-19 1986-07-24 Merck Patent Gmbh, 6100 Darmstadt Mittel und verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
JPH0612455B2 (ja) * 1985-08-10 1994-02-16 長瀬産業株式会社 剥離剤組成物
US4895703A (en) * 1985-09-17 1990-01-23 Calgon Corporation Trihydroxybenzene boiler corrosion inhibitor compositions and method
DE3537441A1 (de) * 1985-10-22 1987-04-23 Hoechst Ag Loesemittel zum entfernen von photoresists
JPS6295531U (de) 1985-12-06 1987-06-18
US4834912A (en) * 1986-02-13 1989-05-30 United Technologies Corporation Composition for cleaning a gas turbine engine
US4744834A (en) 1986-04-30 1988-05-17 Noor Haq Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide
US4929301A (en) * 1986-06-18 1990-05-29 International Business Machines Corporation Anisotropic etching method and etchant
US4770713A (en) 1986-12-10 1988-09-13 Advanced Chemical Technologies, Inc. Stripping compositions containing an alkylamide and an alkanolamine and use thereof
US4861386A (en) * 1986-12-12 1989-08-29 Dowell Schlumberger Incorporated Enhanced cleaning procedure for copper alloy equipment
DE3642830A1 (de) * 1986-12-16 1988-07-07 Hoechst Ag Verfahren zur herstellung von pyrimidinen
JP2571375B2 (ja) * 1987-01-27 1997-01-16 奥野製薬工業 株式会社 水溶性レジストフイルム用剥離剤
US4732797A (en) * 1987-02-27 1988-03-22 James River Corporation Wet wiper natural acid preservation system
JPH0612232Y2 (ja) 1987-05-19 1994-03-30 マツダ株式会社 エンジンの燃料供給装置
JP2625123B2 (ja) * 1987-07-17 1997-07-02 三菱重工業株式会社 難溶性スケールの化学的洗浄方法
EP0299166A1 (de) 1987-07-17 1989-01-18 Mitsubishi Jukogyo Kabushiki Kaisha Verfahren zur Entfernung von Ablagerungen auf Innenflächen von Dampfkesselrohrteilen
JP2625132B2 (ja) * 1987-12-16 1997-07-02 三菱重工業株式会社 難溶性スケールの化学的洗浄方法
JP2553872B2 (ja) 1987-07-21 1996-11-13 東京応化工業株式会社 ホトレジスト用剥離液
JPS6421088U (de) 1987-07-29 1989-02-02
US4824763A (en) * 1987-07-30 1989-04-25 Ekc Technology, Inc. Triamine positive photoresist stripping composition and prebaking process
US5185235A (en) * 1987-09-09 1993-02-09 Tokyo Ohka Kogyo Co., Ltd. Remover solution for photoresist
JP2542898B2 (ja) * 1988-04-07 1996-10-09 富士写真フイルム株式会社 水なしps版用現像液
JPH0735355Y2 (ja) 1988-04-26 1995-08-09 新日本無線株式会社 マイクロ波加熱装置
US5022926A (en) * 1988-06-10 1991-06-11 W. R. Grace & Co.-Conn. Corrosion control
US4873136A (en) * 1988-06-16 1989-10-10 General Electric Company Method for preparing polymer surfaces for subsequent plating thereon, and improved metal-plated plastic articles made therefrom
US5141803A (en) * 1988-06-29 1992-08-25 Sterling Drug, Inc. Nonwoven wipe impregnating composition
JP2598993B2 (ja) * 1989-03-29 1997-04-09 富士写真フイルム株式会社 感光性平版印刷版用現像液組成物及び製版方法
US4980077A (en) * 1989-06-22 1990-12-25 Mobil Oil Corporation Method for removing alkaline sulfate scale
US5049201A (en) * 1989-06-22 1991-09-17 International Business Machines Corporation Method of inhibiting corrosion in an electronic package
DE3923426A1 (de) * 1989-07-15 1991-01-17 Hoechst Ag Verfahren zur herstellung von novolak-harzen mit geringem metallionengehalt
US5015298A (en) * 1989-08-22 1991-05-14 Halliburton Company Composition and method for removing iron containing deposits from equipment constructed of dissimilar metals
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
US5143592A (en) 1990-06-01 1992-09-01 Olin Corporation Process for preparing nonconductive substrates
US5094814A (en) 1990-06-15 1992-03-10 Nalco Chemical Company All-volatile multi-functional oxygen and carbon dioxide corrosion control treatment for steam systems
JP2524436B2 (ja) 1990-09-18 1996-08-14 インターナショナル・ビジネス・マシーンズ・コーポレイション 表面処理方法
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6187730B1 (en) * 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
US6121217A (en) * 1990-11-05 2000-09-19 Ekc Technology, Inc. Alkanolamine semiconductor process residue removal composition and process
US6110881A (en) 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
DE69231971T2 (de) * 1991-01-24 2002-04-04 Purex Co., Ltd. Lösungen zur Oberflächenbehandlung von Halbleitern
US5496491A (en) * 1991-01-25 1996-03-05 Ashland Oil Company Organic stripping composition
US5556482A (en) * 1991-01-25 1996-09-17 Ashland, Inc. Method of stripping photoresist with composition containing inhibitor
JP3160344B2 (ja) * 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
US5091108A (en) 1991-02-21 1992-02-25 Nalco Chemical Company Method of retarding corrosion of metal surfaces in contact with boiler water systems which corrosion is caused by dissolved oxygen
US5342543A (en) * 1991-05-28 1994-08-30 Data Medical Associates, Inc. Neutralizing absorbent for acids and bases
US5234506A (en) * 1991-07-17 1993-08-10 Church & Dwight Co., Inc. Aqueous electronic circuit assembly cleaner and method
WO1993002226A1 (en) * 1991-07-17 1993-02-04 Church & Dwight Company, Inc. Aqueous electronic circuit assembly cleaner and method
JPH05259066A (ja) * 1992-03-13 1993-10-08 Texas Instr Japan Ltd ポジ型フォトレジスト用剥離液および半導体装置の製造方法
US5746837A (en) * 1992-05-27 1998-05-05 Ppg Industries, Inc. Process for treating an aluminum can using a mobility enhancer
JP3048207B2 (ja) 1992-07-09 2000-06-05 イー.ケー.シー.テクノロジー.インコーポレイテッド 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5288332A (en) * 1993-02-05 1994-02-22 Honeywell Inc. A process for removing corrosive by-products from a circuit assembly
US5407788A (en) * 1993-06-24 1995-04-18 At&T Corp. Photoresist stripping method
US5419779A (en) * 1993-12-02 1995-05-30 Ashland Inc. Stripping with aqueous composition containing hydroxylamine and an alkanolamine
US5562963A (en) * 1994-08-31 1996-10-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Absorbent pads for containment, neutralization, and clean-up of environmental spills containing chemically-reactive agents
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
JP3236220B2 (ja) * 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
JP3755776B2 (ja) * 1996-07-11 2006-03-15 東京応化工業株式会社 リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法
US5968848A (en) * 1996-12-27 1999-10-19 Tokyo Ohka Kogyo Co., Ltd. Process for treating a lithographic substrate and a rinse solution for the treatment
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition
JP3773227B2 (ja) * 1997-10-16 2006-05-10 東京応化工業株式会社 レジスト用剥離液組成物およびこれを用いたレジスト剥離方法

Also Published As

Publication number Publication date
ES2129403T3 (es) 1999-06-16
US5902780A (en) 1999-05-11
US5334332A (en) 1994-08-02
US20020052301A1 (en) 2002-05-02
GR3030070T3 (en) 1999-07-30
US6140287A (en) 2000-10-31
EP0485161A1 (de) 1992-05-13
US5381807A (en) 1995-01-17
US5672577A (en) 1997-09-30
JPH04289866A (ja) 1992-10-14
US20040198621A1 (en) 2004-10-07
US5482566A (en) 1996-01-09
DK0485161T3 (da) 1999-09-13
EP0485161B1 (de) 1999-01-27
US6319885B1 (en) 2001-11-20
DE69130823T2 (de) 1999-09-09
DE69130823D1 (de) 1999-03-11
US5279771A (en) 1994-01-18
US7051742B2 (en) 2006-05-30
JP2691952B2 (ja) 1997-12-17

Similar Documents

Publication Publication Date Title
ATE176337T1 (de) Entschichtungsmittel und verfahren zum entfernen von fotolacken von oberflächen
CA1194765A (en) Stripping compositions and methods of stripping resists
CA1177373A (en) Stripping compositions and methods of stripping resists
EP0301756A3 (de) Triamin-Entschichtungslösung für positive Photolacke
US3813309A (en) Method for stripping resists from substrates
JPH04124668A (ja) レジスト用剥離剤組成物
EP0103808A1 (de) Entschichtungsmittel und Verfahren zum Entschichten einer Photoresistschicht
ATE522926T1 (de) Verfahren zur entfernung organischer kontamination von einer halbleiteroberfläche
JPS5821000B2 (ja) 清浄化組成物
MY117049A (en) Composition for stripping photoresist and organic materials from substrate surfaces
DE60044762D1 (de) Verfahren und Vorrichtung zur Herstellung eines Halbleiterbauelements
JPH07146563A (ja) ホトレジスト剥離方法
AU594509B2 (en) Stripping compositions and methods of stripping resists from substrates
DE69934326D1 (de) Verfahren zur entfernung organischen materials von trägern
US4426311A (en) Methylene chloride-methane sulfonic acid stripping compositions and methods for using same
JPH07199485A (ja) フォトレジストの除去方法
US6319884B2 (en) Method for removal of cured polyimide and other polymers
KR860001841B1 (ko) 양성 포토레지스트 박리조성물(positive photoresist stripping composition)
WO1987005314A1 (en) Photoresist stripper composition and process of use
EP0163202A2 (de) Photolackentferner und Verfahren zum Entfernen von Photolacken
EP0224843B1 (de) Entwickelverfahren für negative Photolacke
KR100510069B1 (ko) 포토레지스트패턴제거방법
JPS62293796A (ja) 印刷配線板の現像方法及びその装置
US4886727A (en) Method for developing negative photoresists
JPH0627684A (ja) リソグラフィー用リンス液及びそれを用いた半導体デバイスの製造方法

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
EELA Cancelled due to lapse of time