GB2342727A - Composition to remove resists and tp inhibit titanium corrosion - Google Patents

Composition to remove resists and tp inhibit titanium corrosion Download PDF

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GB2342727A
GB2342727A GB9822206A GB9822206A GB2342727A GB 2342727 A GB2342727 A GB 2342727A GB 9822206 A GB9822206 A GB 9822206A GB 9822206 A GB9822206 A GB 9822206A GB 2342727 A GB2342727 A GB 2342727A
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composition
substrate
hydroxylamine
titanium
alloy
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GB9822206D0 (en
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Richard A Pethrick
Douglas Holmes
Stanley Affrossman
Leslie W Arkless
Wai Mun Lee
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EKC Technology Ltd
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EKC Technology Ltd
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Priority to GB9822206A priority Critical patent/GB2342727A/en
Publication of GB9822206D0 publication Critical patent/GB9822206D0/en
Priority to PCT/GB1999/003381 priority patent/WO2000022662A1/en
Priority to AU62185/99A priority patent/AU6218599A/en
Publication of GB2342727A publication Critical patent/GB2342727A/en
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/12—Oxygen-containing compounds
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/24—Hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
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    • C11D7/3218—Alkanolamines or alkanolimines
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    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

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Abstract

A composition for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, comprises hydroxylamine or a derivative thereof and one or more compounds selected from 2,3-dihydroxytetralin, 2,3-dihydroxynaphthalene and/or nordihydroguaiaretic acid. The composition also inhibits corrosion of titanium and its alloys.

Description

2342727 INHIBITION OF TITANIUM CORROSION The present invention relates to
the inhibition of titanium corrosion and, in particular, to compounds, compositions and methods used for the inhibition of titanium corrosion.
Titanium finds application in metallization layers in semiconductor structures. Both the pure element and alloys thereof may be used as barrier layers to prevent electro-migration of certain atoms and/or as anti-reflective layers on top of other metals. The reduction of interconnect dimensions in semiconductor manufacture is leading to the replacement of aluminum by titanium as the metallization layer in semiconductor materials and corrosion and electrolyte etching is a major factor in interconnect deterioration.
Titanium forms a thin layer of a surface oxide and corrosion inhibition can be associated with retention of this surface layer. Titanium is an amphoteric metal which dissolves (corrodes) readily at both low and high pH. Small amounts of corrosion which occur at neutral pH tend to lower the pH at cathodic sites and increase the pH at anodic sites. Buffering chemicals which ameliorate development of this pH differential can inhibit corrosion. Organic molecules able to complex with the surface oxide layer can suppress crack formation and can also stabilize the metals.
The need to inhibit titanium corrosion is very important: a 40 nm structure found in 0.25 Am technology is only approximately 100 titanium atoms deep and loss of only a few atoms can have a significant effect on circuit performance and durability.
As integrated circuit manufacture has become more complex and the dimensions of circuit elements fabricated on silicon or other semiconductor wafers have become smaller, continued improvements in the techniques used to remove photoresists and other polymeric materials and residues formed from such materials have been required. Photoresists and other polymeric materials, such as polyimides, are often subjected to ion implantation, plasma etching, reactive ion etching or ion milling during the fabrication process to define patterns in the substrate. oxygen plasma oxidation is also often used for removal of photoresists and other polymeric materials after their use during the semiconductor fabrication process. Such high-energy processes may result in the hardening of the photoresist and the formation of organometallic compounds and other residues on sidewalls of the structures being formed.
During processing of wafers, reactive stripper solutions comprising hydroxylamine may be used during the post-metallisation stages for removal of resist residues and deposits left after plasma etch treatments. Examples of reactive stripper solutions suitable for these processes are disclosed in the Applicant's US Patents 5 279 771 and 5 334 332.
However, the hydroxylamine also initiates chemical attack and consequent corrosion of the titanium layer.
Catechol has previously been added to certain reactive strippers to stabilize the hydroxylamine and it has now been observed that the addition of catechol also has a beneficial activity in inhibiting the corrosion of titanium. Whilst the mode of action of catechol is not known and the Applicant does not wish to be bound by theory, it is considered that catechol may decrease the surface reactivity either by binding to the solid or by influencing the pH at the interface, or both.
Accordingly, in a.first embodiment, the present invention provides a composition for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, the composition comprising hydroxylamine or a derivative thereof and at least one compound having the general formula (I) as shown below:
Formula (I) OH RI OH R2R4 wherein:
Ri and R4 are each independently selected from H, OH, COH, Halogen, C,_C3 alkyl, C1_C3 alkoxy or (CH2)nOH wherein n is 1, 2 or 3; R2 and R3 are each independently selected from H, 30 OH, C02H, halogen, C,_C, alkyl, Cl- C. alkoxy, or a group having the structure shown as formula (II) below, or together form a saturated, unsaturated or aromatic mono- or multi- cyclic ring system; 35 Formula (II) qC H3 IIC>--<H2 5 qH H and wherein R1 r R 2 R3 and R4 are not simultaneously H.
The composition according to the present invention is particularly useful as a stripping composition for removing resist material during the manufacture of semiconductor integrated circuits. Resist materials which may be removed by the composition of the present invention include positive photoresists comprising, for example, orthonaphthoquinone diazide sulfonic acid ester or amide sensitizer with novolak-type binders or resins. The composition may also be used to remove cured and uncured polymer resists comprising, for example, a polyimide, organometallic polymers formed on a substrate during plasma etching processes, sidewall polymeric materials and metal oxide residues.
The composition according to the present invention may also be used as a cleaning composition for removing etching residue during the manufacture of semiconductor integrated circuits.
Examples of suitable substrates include metal substrates comprising titanium and alloys thereof, such as titanium/tungsten, titanium/aluminium, titanium/copper, titanium/tungsten/aluminium, titanium/copper/aluminium, titanium/tungsten/copper and titanium/tungsten/copper/aluminium.
The substrate may also comprise, for example, a semiconductor wafer having on a surface thereof titanium or an alloy of titanium. Examples are well known in the semiconductor industry and include silicon, silicon oxide, silicon nitride, gallium arsenide, a plastic substrate, such as polycarbonate, which have on a surface thereof at least a portion comprising titanium or an alloy thereof.
In the composition according to the present invention, the compound having the general formula (I) is preferably selected from one or more of 2,3-dihydroxytetralin, 2,3- dihydroxynaphthalene and nordihydroguaiaretic acid whose structures are illustrated below:
Oa OH Ca OH OH OH 2,3-dihydroxynaphthalene 2,3-dihydroxytet-alin 0 HOf OH OH nordihydroguaiaretic acid The composition advantageously further comprises a solvent, for example a polar solvent, which is preferably miscible with the hydroxylamine. Suitable examples include solvents selected from one or more of an alkanolamine, water, dimethyl sulfoxide, ethylene glycol, ethylene glycol alkyl ether, diethylene glycol alkyl ether (e.g. diethylene glycol butyl ether), triethylene glycol alkyl ether (e.g. triethylene glycol butyl ether), propylene glycol, propylene glycol alkyl ether, dipropylene glycol alkyl ether (e.g. dipropylene glycol ethyl ether), tripropylene glycol alkyl ether, N-substituted pyrrolidone (e.g. Nmethyl-2- pyrrolidone), ethylenediamine, ethylenetriamine, diethylenetriamine, dimethyl formamide and dimethyl acetamide. The most preferred solvent is an alkanolamine. The addition of a solvent strengthens the effectiveness of the composition, particularly when it is used as a stripping composition for removing resist material from a substrate.
In a preferred embodiment the composition comprises at least 5 wt% hydroxylamine, at least 10 wt% of one or more alkanolamines and from 0.5 to 30 wt% (preferably from 2 to 30 wt%) of one or more compounds having the general formula (I), with any remaining balance consisting of one or more of the solvents recited above (the most preferable being one or both of water and/or dimethyl sulfoxide). More preferably, the composition comprises from 10 to 70 wt% hydroxylamine, from 30 to 60 wt% of one or more alkanolamines and from 5 to 15 wt% of one or more compounds having the general formula (I), with any remaining balance consisting of any of the solvents recited above (the most preferable being one or both of water and/or dimethyl sulfoxide).
It has been found that the number and configuration of the hydroxyl groups in the compound having the general formula (I) are important factors.
Neither a single hydroxyl, for example phenol, nor two hydroxyls in the para position, for example hydroquinone, have been observed to confer any protection against corrQsion. However, placing two hydroxyls on adjacent carbons has been found to inhibit the corrosion of the titanium.
The hydroxylamine suitable for use in the present invention has the structure NH2 OH. It may be conveniently provided in the form of a commercially available aqueous solution (about 50 wt%) from Nissin Chemical. Derivatives of hydroxylamine, such as a salt thereof, may also be used.
Alkanolamines suitable for use in the present invention are preferably miscible with the hydroxylamine and are preferably water-soluble. Additionally, the alkanolamines useful in the present invention preferably have relatively high boiling points, preferably 750C or above. Suitable alkanolamines are primary, secondary or tertiary amines and are preferably monoamines, diamines or triamines, and, most preferably, monamines. The alcohol group of the alkanolamines preferably has from 1 to 6 carbon atoms, and can be based on a linear, branched or cyclic alcohol.
Preferred alkanolamines suitable for use in the composition according to the present invention can be represented by the chemical formula:
R 1 R 2-N-CH 2 CH 2-0-R 3 wherein: R, and R 2 can each independently be H, CH 31 CH 3 CH 2 or CH 2 CH 2 OH and R, is CH2CH 2 OH.
Examples of suitable alkanolamines include monoethanolamine, diethanolamine, triethanolamine, teritarybutyldiethanolamine, isopropanolamine, diisopropanolamine, 2- amino-i-propanol, 3-amino-1propanol, isobutanolamine, 2-amino-2- ethoxyethanol (diglycolamine), 2-amino-2-ethoxy-propanol and 1- hydroxy-2-aminobenzene.
A particularly preferred composition for use as a stripper solution consists of a solvent made up of about 37 wt% hydroxylamine solution (50:50 hydroxylamine:water by weight), about 63 wt% of diglycolamine, and one or more compounds having the general formula (I) as herein described added thereto so as to provide a concentration of about 0.2M.
The present invention also provides a process for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, the process comprising contacting the substrate with a composition as hereinbefore described at a temperature and for a time sufficient to remove the resist, polymeric material and/or etching residue from the substrate.
The temperature is preferably in the range of from 20 to 1500C, more preferably 60 to 700C, whilst the contact time is preferably in the range of from 2 to 60 minutes, more preferably 2 to 5 minutes. The process will generally be carried out at atmospheric pressure. Suitable substrates have been described above and include, for example, a semiconductor wafer having on a surface thereof titanium or an alloy of titanium.
The process may further comprise the step of rinsing the substrate with a suitable rinsing composition following substantial removal of the resist, polymeric material and/or etching residue from the substrate. Suitable examples of rinsing compositions include isopropyl alcohol, Nmethylpyrrolidone, dimethyl sulfoxide, dilute citric acid and/or dilute acetic acid. Alternatively, the substrate may be rinsed with a rinsing composition as described in the applicant's International Patent Application (WO 98/36045). These compositions comprise a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quarternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. The rinsing step may be followed by a water rinse, and finally a drying step such as vapour IPA drying.
In another aspect, the present invention provides a method of inhibiting corrosion of a substrate comprising titanium or an alloy thereof, the method comprising contacting the substrate with at least one compound having the general formula (I) as shown below:
Formula (I) OH R, OH R,R4 wherein:
R, and R4 are each independently selected from H, OH, CO 2 H, Halogen, CI-C 3 alkyl, Cl-C 3 alkoxy or (CH2)nOH wherein n is 1, 2 or 3; R2 and R3 are each independently selected from H, OH, C02H, halogen, Cl-C 8 alkyl, Cl-C. alkoxy, or a group having the structure shown as formula (II) below, or together form a saturated, unsaturated or aromatic mono- or multi-cyclic ring system; Formula (II) H3C H3 H2C>---<H2 H H The compound having the general formula (I) may be provided in a composition comprising a solvent as hereinbefore described.
In the method according to the present invention, the compound having the general formula (I) may be selected from one or more of catechol, 4methylcatechol, 4-t-butylcatechol, pyrogallol, t- butyl-pyrogallol, gallic acid, 3-bromocatechol, 2,3dihydroxytetralin, 2,3dihydroxynaphthalene, and nordihydroguaiaretic acid. Preferably, the compound is selected from one or more of 2,3dihydroxynaphthalene, 2,3dihydroxytetralin and nordihydroguaiaretic acid.
Preferably, the compound having the general formula (I) is used in the method according to the present invention as a constituent in compositions comprising hydroxylamine or a derivative thereof and preferably at least one alkanolamine as herein described. Examples of such stripping and cleaning compositions have been.described above. Suitable substrates have also been described above and include, for example, a semiconductor wafer having on a surface thereof titanium or an alloy of titanium.
The present invention still further provides for the use of a compound having the general formula (I) as shown below in a stripper or cleaning composition for removing resist, polymeric material and/or etching residue from a substrate, which substrate comprises titanium or an alloy thereof:
Formula (I) OH R, OH R,R4 wherein:
Ri and R 4 are each independently selected from H, OH, C02H, Halogen, Ci-C3 alkyl, C,-C 3 alkoxy or (CH 2),OH wherein n is 1, 2 or 3; R 2 and R 3 are each independently selected from H, OH, CO 2H, halogen, Cl-C 8 alkyl, Cl-C. alkoxy, or a group having the structure shown as formula (II) below, or together form a saturated, unsaturated or aromatic mono- or multi-cyclic ring system; Formula (II) lic H3 ijc H2 H H and wherein R, p R 2 R 3 and R4 are not simultaneously H.
In this aspect, the compound having the general formula (I) is preferably selected from one or more of 4-methylcatechol, 4-t-butylcatechol, pyrogallol, t butyl-pyrogallol, gallic acid, 3-bromocatechol, 2,3 dihydroxytetralin, 2,3-dihydroxynaphthalene, and nordihydroguaiaretic acid. More preferably, the compound is selected from one or more of 2,3 dihydroxynaphthalene, 2,3-dihydroxytetralin and nordihydroguaiaretic acid.
The present invention also provides for the use of a compound having the general formula (1) as shown below as a corrosion inhibitor in a stripper or cleaning composition for removing resist, polymeric material and/or etching residue from a substrate, which substrate comprises titanium or an alloy thereof Formula (I) OH Ri OH R,R4 wherein:
Ri and R4 are each independently selected f rom H, OH, CO 2 H, Halogen, Cl-C 3 alkyl, Cl-C 3 alkoxy or (CH 2)noH wherein n is 1, 2 or 3; R 2 and R3 are each independently selected from H, OH, CO 2 H, halogen, Cl-C 8 alkyl, Cl-C. alkoxy, or a group having the structure shown as formula (II) below, or together form a saturated, unsaturated or aromatic mono- or multi-cyclic ring system; Formula (II) ij C CH3 Fj C >_<Z OOH OH In this aspect, the compound having the general formula (I) is preferably selected from one or more of catechol, 4-methylcatechol, 4-t- butylcatechol, pyrogallol, t-butyl-pyrogallol, gallic acid, 3bromocatechol, 2,3dihydroxytetralin, 2,3dihydroxynaphthalene, and nordihydroguaiaretic acid. More preferably, the compound is selected from one or more of 2,3dihydroxynaphthalene, 2,3- dihydroxytetralin and nordihydroguaiaretic acid.
Examples of stripping and cleaning compositions have been described above. Suitable substrates have also been described above and include, for example, a semiconductor wafer having on a surface thereof 14 - titanium or an alloy of titanium.
The present invention will now be described with reference to the following Examples and Comparative Examples.
ExamRles 1 to 6 (Examples 1 to 3 are comparative) The solutions tested consisted of a solvent of 37 wt% hydroxylamine solution (50:50 hydroxylamine:water by weight) and 63 wt% diglycolamine with the chosen corrosion inhibitor being added to provide a concentration of 0.2M (except where stated).
Pieces of silicon wafer coated with 100 nm titanium were suspended in the test solutions and the time taken to remove the film was determined by the use of a 4-point probe to monitor the resistance and hence the thickness of the film. The longer the time, the better the protection. The time in minutes required for the solution without corrosion inhibitor to remove the titanium film, i.e. 12 min, was taken as the reference and all times quoted are the additional time gained by use of the inhibitor, Lt. The solution temperature was 650C. The results are set out in Table I below.
I Table 1 corrosion Inhibitor At(min) 1 phenol 0 2 hydroquinone 0 3 catechol 60 4 2,3-dihydroxynaphthalene 80 2,3-dihydroxytetralin 68 6 nordihydroguaiaretic acid 170 (0.1m) Catechol derivatives vary in stability to exposure to atmosphere. The present invention is concerned with the use of stabilizers under working conditions and consequently the materials were examined in systems exposed to air.

Claims (28)

Claims:
1. A composition for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, the composition comprising hydroxylamine or a derivative thereof and one or more.compounds selected from 2,3dihydroxytetralin, 2,3-dihydroxynaphthalene and/or nordihydroguaiaretic acid.
2. A composition as claimed in claim 1 wherein the the hydroxylamine is provided in an aqueous solution.
3. A composition as claimed in claim 2 wherein the the hydroxylamine is provided in an aqueous solution at a weight ratio (hydroxylamine:water) of approximately 1:1.
4. A composition as claimed in any one of the preceding claims further comprising a solvent which is miscible with the hydroxylamine or derivative thereof.
5. A composition as claimed in claim 4, wherein the solvent is selected from one or more of an alkanolamine, water, dimethyl sulfoxide, ethylene glycol, ethylene glycol alkyl ether, diethylene glycol alkyl ether, triethylene glycol alkyl ether, propylene glycol, propylene glycol alkyl ether, dipropylene glycol alkyl ether, tripropylene glycol alkyl ether, N-substituted pyrrolidone, ethylenediamine and ethylenetriamine.
6. A composition as claimed in claim 5 comprising at least 5 wt% hydroxylamine, at least 10 wt% of one or more alkanolamines and a total of from 0.5 to 30 wt% I of one or more compounds selected from 2,3dihydroxytetralin, 2,3- dihydroxynaphthalene and/or nordihydroguaiaretic acid, with any remaining balance consisting of one or more of the said solvents. 5
7. A composition as claimed in claim 5 or claim 6 comprising from 10 to 70 wt% hydroxylamine, from 30 to 60 wt% of one or more alkanolamines and a total of from 5 to 15 wt% of one or more compounds selected from 2,3-dihydroxytetralin, 2,3-dihydroxynaphthalene and/or nordihydroguaiaretic acid, with any remaining balance consisting of one or more of the said solvents.
8. A composition as claimed in claim 6 or claim 7 wherein the remaining balance consists of a solvent selected from one or both of water and/or dimethyl sulfoxide.
9. A composition as claimed in any one of claims 5 to 8, wherein the alkanolamine is selected from one or more of monoethanolamine, diethanolamine, triethanolamine, tertiarybutyldiethanolamine, isopropanolamine, diisopropanolamine, 2-amino-1- propanol, 3-amino-i-propanol, isobutanolamine, 2amino-2-ethoxyethanol (diglycolamine), 2-amino-2ethoxy-propanol and 1-hydroxy-2-aminobenzene.
10. A process for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, the process comprising contacting the substrate with a composition as claimed in any one of claims 1 to 9 at a temperature and for a time sufficient to substantially remove the resist, polymeric material and/or etching residue from the substrate.
11. A process as claimed in claim 10, wherein the temperature is in the range of from 20 to 1500C. 5
12. A process as claimed in claim 10 or claim 11, wherein the temperature is in the range of from 60 to 700C.
13. A process as claimed in any one of claims 10 to 12, wherein the time is in the range of from 2 to 60 minutes.
14. A process as claimed in any one of claims 10 to 13, wherein the time is in the range of from 2 to 20 minutes, preferably from 15 to 20 minutes.
15. A process as claimed in any one of claims 10 to 14, wherein the substrate comprises a semiconductor wafer having on a surface thereof titanium or an alloy of titanium.
16. A process as claimed in any one of claims 10 to 15 further comprising the step of rinsing the substrate with a rinsing composition following the substantial removal of the resist, polymeric material and/or etching residue from the substrate.
17. A process as claimed in claim 16 wherein the rinsing composition comprises a polar solvent or an aqueous solution having a pH in the range of from 2 to 5.
18. A process as claimed in claim 16 or claim 17 wherein the rinsing composition comprises one or more of isopropyl alcohol, dimethyl sulfoxide, Nmethylpyrrolidone, dilute citric acid and/or dilute acetic acid.
19. A process as claimed in claim 16 wherein the rinsing composition comprises a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quarternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base.
20. A process as claimed in any one of claims 16 to 19 wherein the step of rinsing is followed by a water rinse, preferably a deionised water rinse, and then a drying step.
21. A method of inhibiting corrosion of a substrate comprising titanium or an alloy thereof, the method comprising contacting the substrate with a compound selected from one or more of 2,3-dihydroxy-tetralin, 2..3dihydroxynaphthalene and/or nordihydroguaiaretic acid.
22. A method as claimed in claim 21, wherein the compound is provided in a composition comprising hydroxylamine or a derivative thereof.
23. A method as claimed in claim 21 or claim 22, wherein the compound is provided in a composition comprising a solvent.
24. A method as claimed in any one of claims 21 to 23, wherein the compound is provided in a composition comprising hydroxylamine or a derivative thereof and at least one alkanolamine which is miscible with the hydroxylamine.
25. Use of one or more compounds selected from 2,3dihydroxytetralin, 2,3dihydroxynaphthalene and/or nordihydroguaiaretic acid in a composition for removing resist, polymeric material and/or etching residue from a substrate, which substrate comprises titanium or an alloy thereof.
26. Use of one or more compounds selected from 2,3dihydroxytetralin, 2,3dihydroxynaphthalene and/or nordihydroguaiaretic acid as a corrosion inhibitor in a composition for removing resist, polymeric material and/or etching residue from a substrate, which substrate comprises titanium or an alloy thereof.
27. A composition for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, which composition is as substantially hereinbefore described with reference to any one of Examples 3 to 6.
28. A method of inhibiting corrosion of a substrate comprising titanium or an alloy thereof, which method is as substantially hereinbefore described with reference to any one of Examples 3 to 6.
GB9822206A 1998-10-12 1998-10-12 Composition to remove resists and tp inhibit titanium corrosion Withdrawn GB2342727A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9822206A GB2342727A (en) 1998-10-12 1998-10-12 Composition to remove resists and tp inhibit titanium corrosion
PCT/GB1999/003381 WO2000022662A1 (en) 1998-10-12 1999-10-12 Inhibition of titanium corrosion
AU62185/99A AU6218599A (en) 1998-10-12 1999-10-12 Inhibition of titanium corrosion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9822206A GB2342727A (en) 1998-10-12 1998-10-12 Composition to remove resists and tp inhibit titanium corrosion

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GB2342727A true GB2342727A (en) 2000-04-19

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WO2001096964A1 (en) * 2000-06-12 2001-12-20 Dongjin Semichem Co., Ltd. Photoresist remover composition

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GB0009112D0 (en) * 2000-04-12 2000-05-31 Ekc Technology Ltd Inhibition of titanium corrosion
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WO2001082002A1 (en) * 2000-04-26 2001-11-01 Dongjin Semichem Co., Ltd. Resist stripper composition
US6774097B2 (en) 2000-04-26 2004-08-10 Dongjin Semichem Co., Ltd. Resist stripper composition
WO2001096964A1 (en) * 2000-06-12 2001-12-20 Dongjin Semichem Co., Ltd. Photoresist remover composition
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AU6218599A (en) 2000-05-01
GB9822206D0 (en) 1998-12-02

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