KR20170111411A - Resist stripper composition, and method for manufacturing a plat panel for a display device and plat panel for a display device, and display device - Google Patents

Abstract

The present invention relates to a process for the production of (a) at least one compound represented by the following general formula (1) and (b) an alkaline compound and optionally further comprising (c) A resist stripper liquid composition, and a method for manufacturing a flat panel for a display device using the stripper, a flat panel for a display device manufactured thereby, and a display device including the flat panel.
[Chemical Formula 1]

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist stripper composition, a flat panel for a display device, a flat panel for a display device manufactured by the same, and a display device using the resist stripper composition. device, and display device}

The present invention relates to a resist stripping liquid composition, a method of manufacturing a flat panel for a display device using the stripping liquid, a flat panel for the display device manufactured thereby, and a display device including the flat panel.

In recent years, efforts have been made to increase the number of pixels per unit area as the demand for high-resolution implementation of flat panel displays increases. According to this tendency, reduction of the wiring width is also required, and in order to cope with this, the dry etching process has been introduced and the process conditions have become increasingly severe.

In addition, due to the enlargement of the flat panel display device, an increase in the signal speed in the wiring is also required. Accordingly, copper having a lower resistivity than aluminum is used as a wiring material. As a result, the required performance for the stripping liquid used in the stripping process, which is a resist stripping process, is also increasing.

Specifically, a considerable level of exfoliation characteristics is required for the removal power against etch residue generated after the dry etching process and the corrosion inhibiting ability against metal wiring. In particular, corrosion resistance to copper as well as aluminum is required, and in order to secure price competitiveness, economic efficiency such as increase in the number of processed substrates is also required.

New technologies are being developed in response to this demand. For example, Korean Laid-Open Patent Application No. 2012-0055449 discloses a photoresist stripper composition using glycol ethers and acetates as additives. The technique is characterized by the application of glycol ethers and acetates as additives and solvents.

However, since some glycol ethers having a low boiling point have a large amount of volatilization during the process, the process loss can be increased. Since acetate can react with organic amines and alkaline compounds which are basic constituents of the exfoliating agent, It is difficult to ensure performance.

Korea Public Patent 2012-0055449

The present invention has been made to solve the problems of the prior art as described above, and it is an object of the present invention to provide a resist stripping liquid composition which is excellent in a resist pattern and a dry and wet etching residue removing ability, is not volatilized during the stripping process, And to provide the above objects.

It is another object of the present invention to provide a method for manufacturing a flat panel for a display device using the above-mentioned peeling liquid composition, a flat panel for a display device manufactured thereby, and a display device including the flat panel.

(A) at least one compound represented by the following general formula (1) and (b) an alkaline compound, and optionally (c) other than the components (a) and ) ≪ / RTI > further comprises: < RTI ID = 0.0 >

[Chemical Formula 1]

Wherein n is an integer of 1 to 3;

R1 and R2 each independently represent hydrogen, C1-C10 alkyl, or a compound containing 1 to 5 oxygen atoms and 2 to 10 carbon atoms, wherein the oxygen atom and the carbon atom form an ether bond;

R3 and R4 are, independently of each other, a non-existent; C1-C5 alkoxy; A C6 to C12 aryl group; A C6-C12 aryloxy group substituted or unsubstituted with an amino group or a C1-C5 alkyl group; A hydroxyl group; -CN; Or an amino group.

In addition,

And removing the resist for the flat panel substrate by using the resist stripping liquid composition. The present invention also provides a method of manufacturing a flat panel for a display device, comprising:

In addition,

Wherein the flat panel is manufactured according to a manufacturing method of the flat panel for a display device.

In addition,

And a flat panel display device including the flat panel.

The resist stripper composition of the present invention provides properties that not only are not volatilized while effectively removing resist patterns and etching residues during the manufacturing process of a flat panel display, but also do not remain after the stripping process. In addition, it provides excellent cumulative process count characteristics.

In addition, a flat panel for a display device manufactured using the release liquid composition and a display device including the flat panel provide desirable device characteristics.

Hereinafter, the present invention will be described focusing on the role of each component.

The present invention relates to a process for the production of (a) at least one compound represented by the following general formula (1) and (b) an alkaline compound and optionally further comprising (c) The present invention relates to a resist stripper composition,

[Chemical Formula 1]

Wherein n is an integer of 1 to 3;

R1 and R2 each independently represent hydrogen, C1-C10 alkyl, or a compound containing 1 to 5 oxygen atoms and 2 to 10 carbon atoms, wherein the oxygen atom and the carbon atom form an ether bond;

R3 and R4 are, independently of each other, a non-existent; C1-C5 alkoxy; A C6 to C12 aryl group; A C6-C12 aryloxy group substituted or unsubstituted with an amino group or a C1-C5 alkyl group; A hydroxyl group; -CN; Or an amino group.

(B) 0.1 to 20% by weight of an alkaline compound, and (c) the other component is 0% by weight based on the total weight of the composition. To 70% by weight.

In the present invention, the term "optional" is used to indicate that it may or may not further include other components depending on the selection.

The resist stripper composition of the present invention may further contain (c) A water-soluble polar solvent, and water.

Each component is described in detail below:

(a) at least one compound represented by the general formula (1)

The compound of formula 1 serves to dissolve the resist polymer as a water-soluble solvent and does not remain on the substrate during the rinsing of the deionized water after peeling and has a boiling point of 150 ° C or higher so that the peeling liquid volatilizes and disappears during the peeling step .

The compound of Formula 1 is preferably selected from the group consisting of bis (2-ethoxyethoxy) methane, bis (2-methoxyethoxy) methane, bis (2-butoxyethoxy) , 6,8,11-tetraoxa-tridecane, 1,13-dimethoxy-3,6,8,11-tetraoxa-tridecane, formaldehyde [bis- (2-phenoxyethyl) acetal] - (2 - ((2-ethoxyethoxy) methoxy) ethoxy) aniline, formaldehyde [bis (2-ortho-tolyloxyethyl) acetal], 2,4,7,9,12,14- (2-isopropoxyethyl) acetal], 4,4 '- (2,2 < RTI ID = 0.0 & '- methylenebis (oxy) bis (ethane-2,1-diyl) bis (oxy) dianiline, 4,7,9,12,14,17- hexaoxycosaic-1,20- , 7,9,12,14,17-hexaoxaicosane-1,20-dinitrile), 1-phenyl-2,5,7,10-tetraoxanandecane, 3,6,8,11-tetraoxal tridecane- 1,13-diamine, and the like.

The compound of Formula 1 may be contained in an amount of 10 to 99.9% by weight based on the total weight of the composition, more preferably 40 to 90% by weight.

When the amount of the compound of formula (1) is less than 10% by weight, the solubility of the photoresist to be removed is low. When the amount of the compound is more than 99.9% There may arise a problem that causes corrosion of the substrate.

(b) an alkaline compound

The alkaline compound strongly penetrates into the polymer matrix of the resist or crosslinked resist under various process conditions such as dry or wet etching, ashing or ion implant processing, The resist attached to the upper portion of the substrate is easily removed by deforming the resist into amorphous polymer gel state by forming an empty space in a structurally weak portion in the resist remaining on the substrate Let's do it.

Examples of the alkaline compound include KOH, NaOH, Tetramethyl ammonium hydroxide (TMAH), Tetraethyl ammonium hydroxide (TEAH), carbonate, phosphate, ammonia and amines. These compounds may be used alone or in combination of two or more. Can be used together.

Examples of the amines include primary amines such as methylamine, ethylamine, monoisopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine and pentylamine; Examples of the secondary amine such as dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine and methylisobutylamine Amine; Tertiary amines such as diethylhydroxyamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine and methyldipropylamine; But are not limited to, choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, Amino-2-propanol, 2-amino-1-propanol, 3-amino-1-propanol, Alkanolamines such as 4-amino-1-butanol and dibutanolamine; (Methoxymethyl) dimethylamine, (methoxymethyl) dimethylamine, (butoxymethyl) dimethylamine, (isobutoxymethyl) dimethylamine, (methoxymethyl) diethanolamine (Methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol and the like Alkoxyamine; 1- (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- Methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, 1-phenylpiperazine, N-methylmorpholine, 4-ethylmorpholine, N-formylmorpholine, N - (2-hydroxyethyl) morpholine, N- (3-hydroxypropyl) morpholine and the like.

The alkali-based compound may be contained in an amount of 0.1% by weight to 20% by weight, preferably 1% by weight to 15% by weight, more preferably 2% by weight to 10% by weight based on the total weight of the composition. When the amount of the alkali-based compound is less than 0.1% by weight, the resist peeling force is lowered. When the amount of the alkali-based compound is more than 20% by weight, rapid corrosion rate increase is caused on the metal wiring made of aluminum or aluminum alloy and copper or copper alloy .

(c)

Water soluble polar solvent

The resist stripping composition of the present invention may further comprise a water-soluble polar solvent. The water-soluble polar solvent serves to dissolve the gelled resist polymer together with the compound represented by the formula (1). In addition, it facilitates the removal of the stripping solution by water in rinsing the deionized water after resist stripping, Thereby minimizing re-adsorption / re-adhesion of the resist.

Examples of the water-soluble polar solvent include a proton-polar solvent and a non-proton-polar solvent except polyhydric alcohol, which may be used alone or in combination.

Preferable examples of the protonic polar solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, di Ethylene glycol monomethyl ether, ethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene Alkylene glycol monoalkyl ethers such as glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether and tripropylene glycol monomethyl ether, and tetrahydroperfuryl alcohol. These may be used singly or in combination of two or more.

Preferable examples of the aprotic polar solvent include pyrrolidone compounds such as N-methylpyrrolidone (NMP) and N-ethylpyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; lactone compounds such as? -butyrolactone; Sulfoxide compounds such as dimethylsulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; Carbonate compounds such as dimethyl carbonate, ethylene carbonate, and the like; But are not limited to, formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) Amide compounds such as N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide and 3-butoxy-N, N-dimethylpropionamide, These can be used alone or in admixture of two or more.

It is preferable that the water-soluble polar solvent is not too high or low in boiling point for proper peeling force, and may be mixed and used. The water-soluble polar solvent may be added according to the performance required in the peeling step, and may be included in an amount of 5 to 60% by weight, more preferably 10 to 30% by weight.

water

The resist stripping composition of the present invention may further comprise water. Water enhances the activation of the alkaline compound to increase the peeling speed and functions to quickly and completely remove the organic contaminants remaining on the substrate and the resist stripping solution during rinsing with deionized water.

As the water, deionized water can be preferably used.

The water may be contained in an amount of 0.1 to 70% by weight, more preferably 20 to 45% by weight. If the water content exceeds 70% by weight, the dissolution capacity of the resist can be reduced to reduce the number of treatments and corrosion of the metal wiring can be caused when the substrate is immersed for a long time.

The specific compositional ratios of the resist stripper composition of the present invention may preferably be set as follows:

(1) In the case where (a) the compound of formula (1) and (b) only the alkaline compound are included in the above-described components, the resist stripping liquid composition of the present invention comprises 80 to 99.9% by weight of the compound and 0.1 to 20% by weight of the alkaline compound (b).

(2) When a water-soluble polar solvent is contained as (a) the compound represented by the formula (1), (b) the alkaline compound and (c) the other component, the resist stripper composition of the present invention (a) from 40 to 80% by weight of a compound having the structural formula (1); (b) 0.1 to 20% by weight of an alkaline compound; And (c) 5 to 60% by weight of a water-soluble polar solvent as another component.

(3) When the above-described components include water as (a) the compound of the formula (1), (b) the alkaline compound and (c) the other component, the resist stripper composition of the present invention a) from 40 to 80% by weight of a compound having the structural formula (1); (b) 0.1 to 20% by weight of an alkaline compound; And (c) 0.1 to 70% by weight of water as another component.

(4) The resist stripping liquid composition of the present invention contains a water-soluble polar solvent and water as (a) the compound of the formula (1), (b) the alkaline compound, (A) from 30 to 80% by weight of a compound having the structural formula (1); (b) 0.1 to 20% by weight of an alkaline compound; (c) 5 to 60% by weight of a water-soluble polar solvent and 0.1 to 70% by weight of water as another component.

Each of the components in the form of the four compositions may be included in the more preferable range described above.

The resist stripping solution composition of the present invention can be prepared by mixing the above-mentioned compounds with a certain amount, and the mixing method is not particularly limited and various known methods can be applied without limitation.

The present invention also provides a resist stripping method characterized by using the resist stripper composition of the present invention. The above-mentioned resist peeling method is a method for peeling a resist,

(I) depositing a conductive metal film on a flat panel display substrate,

(II) forming a resist film on the conductive metal film;

(III) selectively exposing the resist film;

(IV) developing the exposed resist film to form a resist pattern;

(V) etching the conductive metal film using the resist pattern as a mask; And

(VI) a step of peeling the resist, which has been modified and cured by the resist pattern formation and etching after the etching process, from the substrate using the resist stripping liquid composition of the present invention.

In addition, the removing method of the present invention may be carried out by performing a dry etching process such as an etchback process or a CMP (Chemical Mechanical Polishing) process without performing a resist pattern forming process using a mask, And a method of peeling off with the peeling liquid composition of the invention.

The resist film formation, exposure, development, etching, and ashing processes in the peeling method can be performed by a method commonly known in the art.

Examples of the types of the resist include positive and negative g-line, i-line and deep ultraviolet (DUV) resists, electron beam resists, X-ray resists, and ion beam resists. , The resist to which the resist stripping composition of the present invention is effectively applied is a photoresist film composed of a novolak-based phenol resin and a photoactive compound based on diazonaphthoquinone, and is also effective for a photoresist film composed of a mixture thereof .

As a method for removing the resist on the flat panel display substrate, the modified or cured resist, and the dry etching residue by using the resist stripping liquid composition of the present invention, a method of immersing the substrate coated with the resist in the stripping liquid, And a method of spraying onto a substrate. In this case, physical treatment such as irradiation of ultrasonic waves, rotation, or contact with a brush that rocks to the left and right may be used in combination. After the removing solution treatment, the removing solution remaining on the substrate can be removed by the subsequent cleaning treatment. The cleaning step is the same as the peeling step except that water or isopropyl alcohol is used in place of the peeling solution.

The peeling method may be a deposition method, a spraying method, or a deposition and spraying method. In the case of peeling by immersion, spraying or immersion and spraying, the temperature for peeling is usually from 15 to 100 캜, preferably from 30 to 70 캜, and the immersion, spraying or immersion and spraying time is usually from 30 seconds to 40 minutes, Preferably 1 minute to 20 minutes, but is not strictly applied in the present invention, and can be modified in a condition that is easy and suitable for a person skilled in the art. If the temperature of the release liquid composition applied on the substrate to which the resist is applied is less than 15 캜, the time required to remove the modified or cured resist film may become excessively long. If the temperature of the composition exceeds 100 占 폚, the lower film layer of the resist film may be damaged, resulting in difficulty in handling the exfoliation liquid.

The resist stripping composition of the present invention and the stripping method using the resist stripping composition of the present invention can be used not only for general resist removal but also for removal of resist and etching residue which are modified or cured by etching gas and high temperature. In addition, the resist stripping composition of the present invention and the stripping method using the resist stripping composition of the present invention have an advantage of excellent corrosion resistance against metal wiring including aluminum or copper when used in the production of a flat panel display.

The present invention also provides a method of manufacturing a flat panel for a display device, which comprises a step of peeling a resist for a flat panel substrate using the resist stripping liquid composition of the present invention.

The present invention also provides a method for manufacturing a flat panel display device, which comprises a step of peeling a resist for a flat panel substrate using the resist stripping liquid composition of the present invention.

The flat panel and the flat panel display device for a display device manufactured by the above manufacturing method are excellent in the removal of the resist in the manufacturing process and the corrosion of the metal wiring including aluminum and / Respectively.

In addition,

And removing the resist for the flat panel substrate by using the resist stripping liquid composition. The present invention also provides a method of manufacturing a flat panel for a display device, comprising:

The resist stripping step is the same as described above.

In addition,

Wherein the flat panel is manufactured according to a manufacturing method of the flat panel for a display device.

In addition,

And a flat panel display device including the flat panel.

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. However, the following examples and comparative examples are provided for illustrating the present invention, and the present invention is not limited by the following examples, and various modifications and changes may be made.

Example  1 to 10 and Comparative Example  1 to 3: Resist  Preparation of release liquid composition

The ingredients of the contents shown in the following Table 1 were mixed to prepare a resist stripping solution composition.

division Formula 1 Alkaline compound Water soluble polar solvent Deionized water
Example 1 BEEM 90 DGA 10 Example 2 BMEM 90 DGA 10 Example 3 BMEM 60 DGA 10 NMP 30 Example 4 BMEM 60 DGA 10 NMP 30 Example 5 BMEM 60 DGA 10 30 Example 6 BMEM 60 MEA 10 30 Example 7 BMEM 60 HEP 10 30 Example 8 BMEM 68 TMAH 2 30 Example 9 BMEM 40 DGA 10 NMP 20 30 Example 10 BBEM 40 DGA 10 THFA 20 30 Example 11 BMEM 40 DGA 10 EDG 20 30 Example 12 BMEM 40 DGA 10 NMP 10 30 EDG 10 Comparative Example 1 TDME 90 DGA 10 Comparative Example 2 MEDG 90 DGA 10 Comparative Example 3 TDME 40 DGA 10 NMP 10 30 NMP 10 Comparative Example 4 MEDG 40 DGA 10 EDG 10 30 EDG 10

(Unit: wt%)

week)

BEEM: bis (2-ethoxyethoxy) methane

BMEM: bis (2-methoxyethoxy) methane

BBEM: bis (2-butoxyethoxy) methane

TDME: triethylene glycol dimethyl ether

MEDG: Diethylene glycol methyl ethyl ether

DGA: diglycolamine

MEA: Monoethanolamine

HEP: Hydroxyethylpiperazine

TMAH: tetramethylammonium hydroxide

NMP: N-methylpyrrolidone

THFA: tetrahydroperfuryl alcohol

EDG: diethylene glycol monoethyl ether

Test Example  1: Peel force  evaluation

In order to confirm the peeling effect of the resist stripping composition, a Mo / Al or Cu / Ti layer is formed on a glass substrate by a thin film sputtering method, and then a photoresist pattern is formed. A substrate on which a metal film was etched by a dry etching method was prepared. After the composition for peeling the resist was maintained at a constant temperature of 50, the peeling force was evaluated by immersing the object for 10 minutes. Then, the substrate was cleaned with pure water for 1 minute to remove the peeling liquid remaining on the substrate, and the substrate was completely dried with nitrogen to remove pure water remaining on the substrate after cleaning.

The denaturation or curing resist and dry etching residue removal performance of the substrate were confirmed using a scanning electron microscope (SEM, Hitachi S-4700), and the results are shown in Table 2 below.

<Evaluation Criteria>

Very good is indicated by?, Good is represented by?,? Is usually represented by?, And defective is represented by?.

Test Example  2: Resist solvency  Evaluation (number of processed / evaluated capacity)

5 parts by weight of a resist (DWG-520, Dongwu Fine-Chem) solidified by removing the solvent through heat treatment at 130 ° C for 3 days was added to 100 parts by weight of the exfoliating solution, Lt; / RTI &gt; Thereafter, the remaining insoluble residue was filtered with a filter paper to measure its weight, and the solubility of the resist was determined. It can be determined that the higher the value, the higher the resist solubility and the higher the number of processed / treated capacities. The results are shown in Table 2 below.

Test Example  3: Evaluation of volatilization amount of stripping solution during the process

To evaluate the amount of volatilization and disappearance of the resist stripping solution, 500 g of each was dispensed into a 100 ml beaker. The beaker was kept at a constant temperature in a 50 ° C. thermostatic chamber, and after 24 hours, the remaining amount of the remaining amount in the beaker was measured The amount of volatilization lost was calculated as%. The results are shown in Table 2 below.

division Peel force solvency(%) Volatiles (%) 24hr Example 1 ◎ 97.4 2.8 Example 2 ◎ 98.2 2.4 Example 3 ◎ 99.1 3.2 Example 4 ◎ 98.9 3.4 Example 5 ◎ 98.1 7.6 Example 6 ◎ 98.3 9.4 Example 7 ○ 92.4 7.2 Example 8 ○ 89.6 7.5 Example 9 ◎ 97.8 8.4 Example 10 ◎ 91.4 8.7 Example 11 ◎ 92.3 8.1 Example 12 ◎ 98.1 7.9 Comparative Example 1 ◎ 83.1 8.8 Comparative Example 2 ◎ 80.4 54.6 Comparative Example 3 ◎ 74.8 39.4 Comparative Example 4 ◎ 71.6 72.1

As shown in Table 2, in Comparative Examples 2 to 4 which did not contain the compound of Compound 1, the amount of volatilization lost after 24 hours was 54.6%, 39.4% and 72.1%, respectively, The resist stripper liquid compositions of Examples 1 to 10 showed much less volatilization. In addition, Examples 1 to 10 containing Compound 1 showed high solubility except for the effect of alkaline compound, whereas Comparative Examples 1 to 4 containing no Compound 1 showed low solubility.

Claims (10)

(a) a resist stripping liquid containing at least one compound represented by the following general formula (1) and (b) an alkaline compound, and further comprising (c) other components other than the component (a) Composition:
[Chemical Formula 1]

Wherein n is an integer of 1 to 3;
R1 and R2 each independently represent hydrogen, C1-C10 alkyl, or a compound containing 1 to 5 oxygen atoms and 2 to 10 carbon atoms, wherein the oxygen atom and the carbon atom form an ether bond;
R3 and R4 are, independently of each other, a non-existent; C1-C5 alkoxy; A C6 to C12 aryl group; A C6-C12 aryloxy group substituted or unsubstituted with an amino group or a C1-C5 alkyl group; A hydroxyl group; -CN; Or an amino group. The method according to claim 1,
(A) 10 to 99.9% by weight of at least one compound represented by the formula (1), (b) 0.1 to 20% by weight of an alkali compound, and (c) 0 to 70% by weight, The resist stripping liquid composition comprising: The method according to claim 1,
(A) at least one compound represented by the formula (1) is selected from the group consisting of bis (2-ethoxyethoxy) methane, bis (2- methoxyethoxy) -Diethoxy-3,6,8,11-tetraoxa-tridecane, 1,13-dimethoxy-3,6,8,11-tetraoxa-tridecane, formaldehyde [bis- (2-phenoxyethyl ) Acetal], 4- (2 - ((2-ethoxyethoxy) methoxy) ethoxy) aniline, formaldehyde [bis (2-ortho-tolyloxyethyl) acetal] Octadecanedioic acid [bis (2-isopropoxyethyl) acetal], 4,4 ', 4'- - (2,2'-methylenebis (oxy) bis (ethane-2,1-diyl) bis (oxy) dianiline, 4,7,9,12,14,17- (4,7,9,12,14,17-hexaoxaicosane-1,20-dinitrile), 1-phenyl-2,5,7,10-tetraoxaneundecane, and 3,6,8,11 -Tetraoxatridecane-1,13-diamine. &Lt; RTI ID = 0.0 &gt; It is a resist stripper composition. The method according to claim 1,
The alkaline compound (b) is one or two or more selected from the group consisting of KOH, NaOH, Tetramethyl ammonium hydroxide (TMAH), Tetraethyl ammonium hydroxide (TEAH), carbonate, phosphate, ammonia and amines The resist stripping liquid composition comprising: The method according to claim 1,
(C) at least one member selected from the group consisting of water-soluble polar solvents and water as the other component. The method of claim 5,
(A) 10 to 98% by weight of a compound having the structural formula (1) based on the total weight of the composition; (b) 0.1 to 20% by weight of an alkaline compound; And (c) at least one selected from the group consisting of water-soluble polar solvents and water as the other components in a residual amount. The method of claim 5,
Wherein the water-soluble polar solvent is used either alone or in combination with a proton-polar solvent and a non-proton-polar solvent other than polyhydric alcohol. A method for manufacturing a flat panel for a display device, which comprises a step of peeling a resist for a flat panel substrate using the resist stripping liquid composition of claim 1. A flat panel for a display device, which is produced by the manufacturing method of claim 8. A flat panel display device comprising the flat panel of claim 9.