WO2000022662A1 - Inhibition of titanium corrosion - Google Patents
Inhibition of titanium corrosion Download PDFInfo
- Publication number
- WO2000022662A1 WO2000022662A1 PCT/GB1999/003381 GB9903381W WO0022662A1 WO 2000022662 A1 WO2000022662 A1 WO 2000022662A1 GB 9903381 W GB9903381 W GB 9903381W WO 0022662 A1 WO0022662 A1 WO 0022662A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- composition
- hydroxylamine
- substrate
- titanium
- alloy
- Prior art date
Links
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 239000010936 titanium Substances 0.000 title claims abstract description 39
- 229910052719 titanium Inorganic materials 0.000 title claims abstract description 39
- 230000007797 corrosion Effects 0.000 title claims description 19
- 238000005260 corrosion Methods 0.000 title claims description 19
- 230000005764 inhibitory process Effects 0.000 title description 5
- 239000000203 mixture Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 37
- HCZKYJDFEPMADG-TXEJJXNPSA-N masoprocol Chemical compound C([C@H](C)[C@H](C)CC=1C=C(O)C(O)=CC=1)C1=CC=C(O)C(O)=C1 HCZKYJDFEPMADG-TXEJJXNPSA-N 0.000 claims abstract description 30
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 23
- HCZKYJDFEPMADG-UHFFFAOYSA-N erythro-nordihydroguaiaretic acid Natural products C=1C=C(O)C(O)=CC=1CC(C)C(C)CC1=CC=C(O)C(O)=C1 HCZKYJDFEPMADG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 15
- 229960003951 masoprocol Drugs 0.000 claims abstract description 15
- JRNGUTKWMSBIBF-UHFFFAOYSA-N naphthalene-2,3-diol Chemical compound C1=CC=C2C=C(O)C(O)=CC2=C1 JRNGUTKWMSBIBF-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- 239000000956 alloy Substances 0.000 claims abstract description 14
- DHTGPMXCRKCPTP-UHFFFAOYSA-N 1,2,3,4-tetrahydronaphthalene-2,3-diol Chemical compound C1=CC=C2CC(O)C(O)CC2=C1 DHTGPMXCRKCPTP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 21
- -1 ethylene glycol alkyl ether Chemical class 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 15
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 239000003112 inhibitor Substances 0.000 claims description 5
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 230000003139 buffering effect Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 150000002443 hydroxylamines Chemical class 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- FHUABAPZGBGMLA-UHFFFAOYSA-N 2-amino-2-ethoxyethanol Chemical compound CCOC(N)CO FHUABAPZGBGMLA-UHFFFAOYSA-N 0.000 claims description 2
- AAPNYZIFLHHHMR-UHFFFAOYSA-N 2-amino-2-ethoxypropan-1-ol Chemical compound CCOC(C)(N)CO AAPNYZIFLHHHMR-UHFFFAOYSA-N 0.000 claims description 2
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 2
- 229940043276 diisopropanolamine Drugs 0.000 claims description 2
- 150000002429 hydrazines Chemical class 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims description 2
- 239000002798 polar solvent Substances 0.000 claims description 2
- LZRPBDKQEKDMJB-UHFFFAOYSA-N 3,4-dihydro-2h-naphthalene-1,1-diol Chemical compound C1=CC=C2C(O)(O)CCCC2=C1 LZRPBDKQEKDMJB-UHFFFAOYSA-N 0.000 claims 1
- 239000008367 deionised water Substances 0.000 claims 1
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 10
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 125000003545 alkoxy group Chemical group 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 125000000217 alkyl group Chemical group 0.000 description 6
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 6
- 229940079877 pyrogallol Drugs 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- UDKYUQZDRMRDOR-UHFFFAOYSA-N tungsten Chemical compound [W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W] UDKYUQZDRMRDOR-UHFFFAOYSA-N 0.000 description 4
- ZBCATMYQYDCTIZ-UHFFFAOYSA-N 4-methylcatechol Chemical compound CC1=CC=C(O)C(O)=C1 ZBCATMYQYDCTIZ-UHFFFAOYSA-N 0.000 description 3
- XESZUVZBAMCAEJ-UHFFFAOYSA-N 4-tert-butylcatechol Chemical compound CC(C)(C)C1=CC=C(O)C(O)=C1 XESZUVZBAMCAEJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229940074391 gallic acid Drugs 0.000 description 3
- 235000004515 gallic acid Nutrition 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- JPBDMIWPTFDFEU-UHFFFAOYSA-N 3-bromobenzene-1,2-diol Chemical compound OC1=CC=CC(Br)=C1O JPBDMIWPTFDFEU-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 125000006274 (C1-C3)alkoxy group Chemical group 0.000 description 1
- 0 *c(c(*)c1O)c(*)c(I)c1O Chemical compound *c(c(*)c1O)c(*)c(I)c1O 0.000 description 1
- 150000005206 1,2-dihydroxybenzenes Chemical class 0.000 description 1
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229910017912 NH2OH Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229940113088 dimethylacetamide Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 239000012085 test solution Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/12—Oxygen-containing compounds
- C23F11/122—Alcohols; Aldehydes; Ketones
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
Definitions
- the present invention relates to the inhibition of titanium corrosion and, in particular, to compounds, compositions and methods used for the inhibition of titanium corrosion.
- Titanium finds application in metallization layers in semiconductor structures. Both the pure element and alloys thereof may be used as barrier layers to prevent electro-migration of certain atoms and/or as anti-reflective layers on top of other metals.
- barrier layers to prevent electro-migration of certain atoms and/or as anti-reflective layers on top of other metals.
- the reduction of interconnect dimensions in semiconductor manufacture is leading to the replacement of aluminum by titanium as the metallization layer in semiconductor materials and corrosion and electrolyte etching is a major factor in interconnect deterioration.
- Titanium forms a thin layer of a surface oxide and corrosion inhibition can be associated with retention of this surface layer. Titanium is an amphoteric metal which dissolves (corrodes) readily at both low and high pH. Small amounts of corrosion which occur at neutral pH tend to lower the ⁇ pH at cathodic sites and increase the pH at anodic sites. Buffering chemicals which ameliorate development of this pH differential can inhibit corrosion. Organic molecules able to complex with the surface oxide layer can suppress crack formation and can also stabilize the metals.
- Photoresists and other polymeric materials such as polyi ides
- Photoresists and other polymeric materials are often subjected to ion implantation, plasma etching, reactive ion etching or ion milling during the fabrication process to define patterns in the substrate.
- Oxygen plasma oxidation is also often used for removal of photoresists and other polymeric materials after their use during the semiconductor fabrication process. Such high-energy processes may result in the hardening of the photoresist and the formation of organometallic compounds and other residues on sidewalls of the structures being formed.
- reactive stripper solutions comprising hydroxylamine may be used during the post-metallisation stages for removal of resist residues and deposits left after plasma etch treatments.
- Examples of reactive stripper solutions suitable for these processes are disclosed in the Applicant's US Patents 5 279 771 and 5 334 332.
- the hydroxylamine also initiates chemical attack and consequent corrosion of the titanium layer.
- Catechol has previously been added to certain reactive strippers to stabilize the hydroxylamine and it has now been observed that the addition of catechol also has a beneficial activity in inhibiting the corrosion of titanium. Whilst the mode of action of catachol is not known and the Applicant does not wish Co be bound by theory, it is considered that catechol may decrease the surface reactivity either by binding to the solid or by influencing the pH at the interface, or both.
- the present invention provides a composition for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, the composition comprising hydroxylamine or a derivative thereof and at least one compound having the general formula (I) as shown below:
- R, and R 4 are each independently selected from H, OH, C0 2 H, Halogen, C ⁇ C j alkyl, C,-C 3 alkoxy or (CH 2 ) n OH wherein n is 1, 2 or 3 ;
- R 2 and R 3 are each independently selected from H, OH, C0 2 H, halogen, ⁇ -C 8 alkyl, C.,-C 8 alkoxy, or a group having the structure shown as formula (II) below, or together form a saturated, unsaturated or aromatic mono- or multi-cyclic ring system; Formula ( II )
- R 1 , R 2 , R 3 and R 4 are not simultaneously H.
- composition according to the present invention is particularly useful as a stripping composition for removing resist material during the manufacture of semiconductor integrated circuits.
- Resist materials which may be removed by the composition of the present invention include positive photoresists comprising, for example, ortho- naphthoquinone diazide sulfonic acid ester or amide sensitizer with novolak-type binders or resins.
- the composition may also be used to remove cured and uncured polymer resists comprising, for example, a polyimide, organoraetallic polymers formed on a substrate during plasma etching processes, sidewall polymeric materials and metal oxide residues.
- composition according to the present invention may also be used as a cleaning composition for removing etching residue during the manufacture of semiconductor integrated circuits.
- suitable substrates include metal substrates comprising titanium and alloys thereof, such as titanium/tungsten, titanium/aluminium, titanium/copper, titanium/tungsten/aluminium, titanium/copper/aluminium, titanium/tungsten/copper and titanium/tungsten/copper/aluminium.
- the substrate may also comprise, for example, a semiconductor wafer having on a surface thereof titanium or an alloy of titanium. Examples are well known in the semiconductor industry and include silicon, silicon oxide, silicon nitride, gallium arsenide, a plastic substrate, such as polycarbonate, which have on a surface thereof at least a portion comprising titanium or an alloy thereof.
- the compound having the general formula (I) is preferably selected from one or more of 2 , 3-dihydroxytetralin, 2 , 3-dihydroxynaphthalene and nordihydroguaiaretic acid whose structures are illustrated below:
- the composition advantageously further comprises a solvent, for example a polar solvent, which is preferably miscible with the hydroxylamine.
- a solvent for example a polar solvent, which is preferably miscible with the hydroxylamine.
- Suitable examples include solvents selected from one or more of an alkanolamine, water, dimethyl sulfoxide, ethylene glycol, ethylene glycol alkyl ether, diethylene glycol alkyl ether (e.g. diethylene glycol butyl ether), triethylene glycol alkyl ether (e.g. triethylene glycol butyl ether) , propylene glycol, propylene glycol alkyl ether, dipropylene glycol alkyl ether (e.g.
- dipropylene glycol ethyl ether tripropylene glycol alkyl ether
- N-substituted pyrrolidone e.g. N- methyl-2-pyrrolidone
- ethylenediamine ethylenetriamine
- diethylenetria ine dimethyl formamide and dimethyl acetamide.
- the most preferred solvent is an alkanolamine. The addition of a solvent strengthens the effectiveness of the composition, particularly when it is used as a stripping composition for removing resist material from a substrate.
- the composition comprises at least 5 wt% hydroxylamine, at least 10 wt% of one or more alkanolamines and from 0.5 to 30 wt% (preferably from 2 to 30 wt%) of one or more compounds having the general formula (I) , with any remaining balance consisting of one or_more of the solvents recited above (the most preferable being one or both of water and/or dimethyl sulfoxide) .
- the composition comprises from 10 to 70 wt% hydroxylamine, from 30 to 60 wt% of one or more alkanolamines and from 5 to 15 wt% of one or more compounds having the general formula (I) , with any remaining balance consisting of any of the solvents recited above (the most preferable being one or both of water and/or dimethyl sulfoxide) .
- the number and *, configuration of the hydroxyl groups in the compound having the general formula (I) are important factors. Neither a single hydroxyl, for example phenol, nor two hydroxyls in the para position, for example hydroquinone, have been observed to confer any protection against corrosion. However, placing two hydroxyls on adjacent carbons has been found to inhibit the corrosion of the titanium.
- the hydroxylamine suitable for use in the present invention has the structure NH 2 OH. It may be conveniently provided in the form of a commercially available aqueous solution (about 50 wt%) from Nissin Chemical. Derivatives of hydroxylamine, such as a salt thereof, may also be used.
- Alkanolamines suitable for use in the present invention are preferably miscible with the hydroxylamine and are preferably water-soluble.
- alkanolamines useful in the present invention preferably have relatively high boiling points, preferably 75°C or above.
- Suitable alkanolamines are primary, secondary or tertiary amines and are preferably monoamines, —diamines or triamines, and, most preferably, monamines.
- the alcohol group of the alkanolamines preferably has from 1 to 6 carbon atoms, and can be based on a linear, branched or cyclic alcohol.
- Preferred alkanolamines suitable for use in the composition according to the present invention can be represented by the chemical formula:
- R 1 R 2 -N-CH 2 CH 2 -0-R 3 wherein: R, and R 2 can each independently be U , CH 3 , CH 3 CH 2 or CH 2 CH 2 OH and R 3 is CH 2 CH 2 OH.
- alkanolamines examples include monoethanolamine, diethanolamine, triethanolamine, teritarybutyldiethanolamine, isopropanolamine, diisopropanolamine, 2-amino-l-propanol, 3-amino-l- propanol, isobutanolamine, 2-amino-2-ethoxyethanol (diglycolamine) , 2-amino-2-ethoxy-propanol and l- hydroxy-2-aminobenzene.
- a particularly preferred composition for use as a stripper solution consists of a solvent made up of about 37 wt% hydroxylamine solution (50:50 hydroxylamine:water by weight) , about 63 wt% of diglycolamine, and one or more compounds having the general formula (I) as herein described added thereto so as to provide a concentration of about 0.2M.
- the present invention also provides a process for removing resist, polymeric material and/or etching residue from a substrate comprising titanium or an alloy thereof, the process comprising contacting the substrate with a composition as hereinbefore described at a temperature and for a time sufficient to remove the resist, polymeric material and/or etching residue from the substrate.
- the temperature is preferably in the range of from 20 to 150°C, more preferably 60 to 70°C, whilst the contact time is preferably in the range of from 2 to 60 minutes, more preferably 2 to 5 minutes.
- the process will generally be carried out at atmospheric pressure.
- Suitable substrates have been described above and include, for example, a semiconductor wafer having on a surface thereof titanium or an aljLoy of titanium.
- the process may further comprise the step of rinsing the substrate with a suitable rinsing composition following substantial removal of the resist, polymeric material and/or etching residue from the substrate.
- suitable rinsing compositions include isopropyl alcohol, N- methylpyrrolidone, dimethyl sulfoxide, dilute citric acid and/or dilute acetic acid.
- the substrate may be rinsed with a rinsing composition as described in the applicant's International Patent Application (WO 98/36045) .
- compositions comprise a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quarternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base.
- the rinsing step may be followed by a water rinse, and finally a drying step such as vapour IPA drying.
- the present invention provides a method of inhibiting corrosion of a substrate comprising titanium or an alloy thereof, the method comprising contacting the substrate with at least one compound having the general formula (I) as shown below:
- R 1 and R 4 are each independently selected from H, OH, C0 2 H, Halogen, C ⁇ -C z alkyl, C t -C 3 alkoxy or (CH 2 ) n OH wherein n is 1, 2 or 3;
- R 2 and R 3 are each independently selected from H, OH, C0 2 H, halogen, C,- ⁇ alkyl, C ⁇ C g alkoxy, or a group having the structure shown as formula (II) below, or together form a saturated, unsaturated or aromatic mono- or multi-cyclic ring system;
- the compound having the general formula (I) may be provided in a composition comprising a solvent as hereinbefore described.
- the compound having the general formula (I) may be selected from one or more of catechol, 4- methylcatechol, 4-t-butylcatechol, pyrogallol, t- butyl-pyrogallol, gallic acid, 3-bromocatechol, 2,3- dihydroxytetralin, 2, 3-dihydroxynaphthalene, and nordihydroguaiaretic acid.
- the compound is selected from one or more of 2,3- dihydroxynaphthalene, 2 , 3-dihydroxytetralin and nordihydroguaiaretic acid.
- the compound having the general formula (I) is used in the method according to the present invention as a constituent in compositions comprising hydroxylamine or a derivative thereof and preferably at least one alkanolamine as herein described.
- Suitable substrates have also been described above and include, for example, a semiconductor wafer having on a surface thereof titanium or an alloy of titanium.
- the present invention still further provides for the use of a compound having the general formula (I) as shown below in a stripper or cleaning composition for removing resist, polymeric material and/or etching residue from a substrate, which substrate comprises titanium or an alloy thereof:
- R 1 and R 4 are each independently selected from H, OH, C0 2 H, Halogen, ⁇ -C ⁇ alkyl, C 1 -C 3 alkoxy or (CH 2 ) n 0H wherein n is 1, 2 or 3;
- R 2 and R 3 are each independently selected from H,
- R 1 , R 2 , R 3 and R A are not simultaneously H.
- the compound having the general formula (I) is preferably selected from one or more of 4-methylcatechol, 4-t-butylcatechol, pyrogallol, t- butyl-pyrogallol, gallic acid, 3-bromocatechol, 2,3- dihydroxytetralin, 2 , 3-dihydroxynaphthalene, and nordihydroguaiaretic acid. More preferably, the compound is selected from one or more of 2,3- dihydroxynaphthalene, 2 , 3-dihydroxytetralin and nordihydroguaiaretic acid.
- the present invention also provides for the use of a compound having the general formula (I) as shown below as a corrosion inhibitor in a stripper or cleaning composition for removing resist, polymeric material and/or etching residue from a substrate, which substrate comprises titanium or an alloy thereof
- R 1 and R 4 are each independently selected from H, OH, C0 2 H, Halogen, C,- ⁇ alkyl, C j -C j alkoxy or (CH 2 ) n 0H wherein n is 1, 2 or 3;
- R 2 and R 3 are each independently selected from H, OH, C0 2 H, halogen, C ⁇ C g alkyl, C ⁇ C g alkoxy, or a group having the structure shown as formula (II) below, or together form a saturated, unsaturated or aromatic mono- or multi-cyclic ring system;
- the compound having the general formula (I) is preferably selected from one or more of catechol, 4-methylcatechol, 4-t-butylcatechol, pyrogallol, t-butyl-pyrogallol, gallic__acid, 3- bro ocatechol, 2 , 3-dihydroxytetralin, 2,3- dihydroxynaphthalene, and nordihydroguaiaretic acid. More preferably, the compound is selected from one or more of 2, 3-dihydroxynaphthalene, 2,3- dihydroxytetralin and nordihydroguaiaretic acid.
- Suitable substrates include, for example, a semiconductor wafer having pn a surface thereof titanium or an alloy of titanium.
- the solutions tested consisted of a solvent of 37 wt% hydroxylamine solution (50:50 hydroxylamine:water by weight) and 63 wt% diglycolamine with the chosen corrosion inhibitor being added to provide a concentration of 0.2M (except where stated).
- Pieces of silicon wafer coated with 100 nm titanium were suspended in the test solutions and the time taken to remove the film was determined by the use of a 4-point probe to monitor the resistance and hence the thickness of the film. The longer the time, the better the protection.
- the time in minutes required for the solution without corrosion inhibitor to remove the titanium film, i.e. 12 min, was taken as the reference and all times quoted are the additional time gained by use of the inhibitor, ⁇ t.
- the solution temperature was 65°C.
- the results are ⁇ set out in Table 1 below.
- Catechol derivatives vary in stability to exposure to atmosphere.
- the present invention is concerned with the use of stabilizers under working conditions and consequently the materials were examined in systems exposed to air.
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- Chemical & Material Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU62185/99A AU6218599A (en) | 1998-10-12 | 1999-10-12 | Inhibition of titanium corrosion |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9822206.0 | 1998-10-12 | ||
GB9822206A GB2342727A (en) | 1998-10-12 | 1998-10-12 | Composition to remove resists and tp inhibit titanium corrosion |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000022662A1 true WO2000022662A1 (en) | 2000-04-20 |
Family
ID=10840401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1999/003381 WO2000022662A1 (en) | 1998-10-12 | 1999-10-12 | Inhibition of titanium corrosion |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU6218599A (en) |
GB (1) | GB2342727A (en) |
WO (1) | WO2000022662A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001078129A1 (en) * | 2000-04-12 | 2001-10-18 | Ekc Technology, Ltd. | Inhibition of titanium corrosion |
CN114540824A (en) * | 2022-03-08 | 2022-05-27 | 昆明冶金研究院有限公司 | Method for regenerating titanium anode plate by using waste acid solution |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100360985B1 (en) | 2000-04-26 | 2002-11-18 | 주식회사 동진쎄미켐 | Resist stripper composition |
KR100363271B1 (en) | 2000-06-12 | 2002-12-05 | 주식회사 동진쎄미켐 | Photoresist remover composition |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4765927A (en) * | 1985-08-12 | 1988-08-23 | House Food Industrial Company Limited | Antioxidizing composition |
JPS63291443A (en) * | 1987-05-25 | 1988-11-29 | Hitachi Ltd | Manufacture of semiconductor device |
JPH03292617A (en) * | 1990-04-10 | 1991-12-24 | Sony Corp | Ferromagnetic metal particle for magnetic recording medium |
US5334332A (en) * | 1990-11-05 | 1994-08-02 | Ekc Technology, Inc. | Cleaning compositions for removing etching residue and method of using |
WO1998036045A1 (en) * | 1997-02-14 | 1998-08-20 | Ekc Technology, Inc. | Post clean treatment |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5419779A (en) * | 1993-12-02 | 1995-05-30 | Ashland Inc. | Stripping with aqueous composition containing hydroxylamine and an alkanolamine |
-
1998
- 1998-10-12 GB GB9822206A patent/GB2342727A/en not_active Withdrawn
-
1999
- 1999-10-12 AU AU62185/99A patent/AU6218599A/en not_active Abandoned
- 1999-10-12 WO PCT/GB1999/003381 patent/WO2000022662A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4765927A (en) * | 1985-08-12 | 1988-08-23 | House Food Industrial Company Limited | Antioxidizing composition |
JPS63291443A (en) * | 1987-05-25 | 1988-11-29 | Hitachi Ltd | Manufacture of semiconductor device |
JPH03292617A (en) * | 1990-04-10 | 1991-12-24 | Sony Corp | Ferromagnetic metal particle for magnetic recording medium |
US5334332A (en) * | 1990-11-05 | 1994-08-02 | Ekc Technology, Inc. | Cleaning compositions for removing etching residue and method of using |
WO1998036045A1 (en) * | 1997-02-14 | 1998-08-20 | Ekc Technology, Inc. | Post clean treatment |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 013, no. 123 (E - 733) 27 March 1989 (1989-03-27) * |
PATENT ABSTRACTS OF JAPAN vol. 016, no. 125 (P - 1331) 30 March 1992 (1992-03-30) * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001078129A1 (en) * | 2000-04-12 | 2001-10-18 | Ekc Technology, Ltd. | Inhibition of titanium corrosion |
CN114540824A (en) * | 2022-03-08 | 2022-05-27 | 昆明冶金研究院有限公司 | Method for regenerating titanium anode plate by using waste acid solution |
CN114540824B (en) * | 2022-03-08 | 2023-12-15 | 昆明冶金研究院有限公司 | Method for regenerating titanium anode plate by using waste acid solution |
Also Published As
Publication number | Publication date |
---|---|
GB9822206D0 (en) | 1998-12-02 |
GB2342727A (en) | 2000-04-19 |
AU6218599A (en) | 2000-05-01 |
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