JPS63291443A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63291443A JPS63291443A JP62125902A JP12590287A JPS63291443A JP S63291443 A JPS63291443 A JP S63291443A JP 62125902 A JP62125902 A JP 62125902A JP 12590287 A JP12590287 A JP 12590287A JP S63291443 A JPS63291443 A JP S63291443A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- lead frame
- lead
- semiconductor device
- chelating agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 239000013522 chelant Substances 0.000 claims abstract description 15
- 239000002738 chelating agent Substances 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 14
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 150000007513 acids Chemical class 0.000 claims 2
- RGCKGOZRHPZPFP-UHFFFAOYSA-N alizarin Chemical compound C1=CC=C2C(=O)C3=C(O)C(O)=CC=C3C(=O)C2=C1 RGCKGOZRHPZPFP-UHFFFAOYSA-N 0.000 claims 2
- GZSKLGADKDWIDU-UHFFFAOYSA-N 2-(2-oxohydrazinyl)benzenesulfonic acid Chemical class ON=NC1=CC=CC=C1S(=O)(=O)O GZSKLGADKDWIDU-UHFFFAOYSA-N 0.000 claims 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical class NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 claims 1
- 150000001371 alpha-amino acids Chemical class 0.000 claims 1
- 235000008206 alpha-amino acids Nutrition 0.000 claims 1
- 150000004880 oxines Chemical group 0.000 claims 1
- 150000004788 tropolones Chemical class 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 21
- 230000007797 corrosion Effects 0.000 abstract description 20
- 239000011347 resin Substances 0.000 abstract description 9
- 229920005989 resin Polymers 0.000 abstract description 9
- AKGGYBADQZYZPD-UHFFFAOYSA-N benzylacetone Chemical compound CC(=O)CCC1=CC=CC=C1 AKGGYBADQZYZPD-UHFFFAOYSA-N 0.000 abstract description 4
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 abstract description 3
- ALKYHXVLJMQRLQ-UHFFFAOYSA-N 3-Hydroxy-2-naphthoate Chemical compound C1=CC=C2C=C(O)C(C(=O)O)=CC2=C1 ALKYHXVLJMQRLQ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- GDEBSAWXIHEMNF-UHFFFAOYSA-O cupferron Chemical compound [NH4+].O=NN([O-])C1=CC=CC=C1 GDEBSAWXIHEMNF-UHFFFAOYSA-O 0.000 abstract 1
- JRNGUTKWMSBIBF-UHFFFAOYSA-N naphthalene-2,3-diol Chemical compound C1=CC=C2C=C(O)C(O)=CC2=C1 JRNGUTKWMSBIBF-UHFFFAOYSA-N 0.000 abstract 1
- 238000011282 treatment Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- -1 CtlaCOO'' Chemical class 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 229910001410 inorganic ion Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- TXBBUSUXYMIVOS-UHFFFAOYSA-N thenoyltrifluoroacetone Chemical compound FC(F)(F)C(=O)CC(=O)C1=CC=CS1 TXBBUSUXYMIVOS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、樹脂封止型半導体装置に係り、特に、耐湿性
及び耐食信頼性に優れた樹脂封止型半導体装置に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device, and particularly to a resin-sealed semiconductor device with excellent moisture resistance and corrosion resistance reliability.
樹脂封止型半導体装置は、リードフレームとしジンの界
面から浸入した水分が、レジン、あるいは、構成金属材
料からさまざまなイオンを溶かし。In resin-sealed semiconductor devices, moisture that enters through the interface between the lead frame and resin dissolves various ions from the resin or constituent metal materials.
アルミニウム（以下ＡＱ）配線上に腐食性液膜を形成し
、半導体素子上のＡＱ配線を腐食させ、断線不良を引き
起こし易い。A corrosive liquid film is formed on the aluminum (hereinafter referred to as AQ) wiring, corroding the AQ wiring on the semiconductor element, and easily causing disconnection defects.
従来、このＡＱ配線の腐食を抑制する方法として、例え
ば、特開昭４７−１２１１１６４号、特開昭５０−２３
９７９号及び特開昭５５−６７１５１号公報に記載のよ
うに、無機物水溶液中で処理し、ＡＱ配線部表面に無機
物の保護皮膜を形成させる方法がある。また、特開昭６
１−７５６４号公報に記載のように、有機物との化合物
皮膜で保護する方法がある。有機抑制剤として、例えば
、ベンゾトリアゾール類などが提案されている。Conventionally, as a method for suppressing corrosion of this AQ wiring, for example, Japanese Patent Application Laid-Open Nos. 47-1211164 and 50-23
As described in No. 979 and Japanese Unexamined Patent Publication No. 55-67151, there is a method in which a protective film of an inorganic material is formed on the surface of the AQ wiring portion by treatment in an inorganic aqueous solution. Also, Unexamined Japanese Patent Publication No. 6
As described in Japanese Patent No. 1-7564, there is a method of protecting with a compound film containing an organic substance. For example, benzotriazoles and the like have been proposed as organic inhibitors.
上記従来技術のうち、無機物による防食処理では、Ａ
Ｑ配線の陽極酸化、あるいは、クロム酸水溶液処理等の
方法がある。これらの方法では。Among the above conventional techniques, anti-corrosion treatment using inorganic substances
There are methods such as anodic oxidation of the Q wiring or treatment with a chromic acid aqueous solution. In these methods.
ＡＱ配線に強固な皮膜を形成することに主眼が置かれて
いるが、いずれの処理でも、処理過程でリードフレーム
やリードワイヤが溶解したり、残留無機物イオンによる
素子の汚染や腐食の発生を伴う等の問題がある。The main focus is on forming a strong film on the AQ wiring, but in both treatments, the lead frame and lead wires may melt during the processing process, and elements may be contaminated or corroded by residual inorganic ions. There are other problems.
また、有機物との化合物皮膜でＡｆｌ配線を保護する方
法として、ベンゾトリアゾール（ＢＴＡ）類の溶液に浸
漬する方法がある。この方法では、Ｃｕリードフレーム
の防食を主体としており、ＡＱ配線の防食までは十分な
考慮がなされていなかった。すなわち、ＢＴＡ類はＣｕ
リードフレーム、及び、リードワイヤに関しては、強固
なＣｕ−ＢＴＡ皮膜を形成し腐食を抑制するが、ＡＱに
対しては保護皮膜を形成しないため、半導体全体の耐湿
信頼性は必ずしも満足するものではない。Further, as a method of protecting the Afl wiring with a compound film containing an organic substance, there is a method of immersing it in a solution of benzotriazole (BTA). This method mainly focuses on corrosion protection of the Cu lead frame, and sufficient consideration has not been given to corrosion protection of the AQ wiring. That is, BTAs are Cu
Regarding lead frames and lead wires, a strong Cu-BTA film is formed to suppress corrosion, but since a protective film is not formed against AQ, the moisture resistance reliability of the entire semiconductor is not necessarily satisfied. .
本発明の目的は、リードワイヤのみならず。The object of the invention is not only to lead wires.
ＡＱ配線の耐食性を改善することにより、樹脂封止型半
導体装置全体の耐湿信頼性を著しく向上させる製造方法
を提供することにある。It is an object of the present invention to provide a manufacturing method that significantly improves the moisture resistance reliability of the entire resin-sealed semiconductor device by improving the corrosion resistance of AQ wiring.
上記目的は、半導体素子とリードフレームとをリードワ
イヤによりワイヤボンディングした後、リードフレーム
、リードワイヤ、及び、ＡＱ配線の表面をキレート化剤
により処理し１表面に耐食性の高いキレート化合物を形
成させることにより達成される。The above purpose is to wire-bond a semiconductor element and a lead frame using a lead wire, and then treat the surfaces of the lead frame, lead wire, and AQ wiring with a chelating agent to form a highly corrosion-resistant chelate compound on one surface. This is achieved by
本発明ではワイヤボンディング後にリードフレーム、リ
ードワイヤ及びＡＱ配線表面にキレート化合物皮膜を形
成させ、リードフレーム及びリードワイヤからの腐食性
の金属イオンの溶出を抑制し、一方、Ａｆｌ配線自体も
耐食性の高いキレート化合物皮膜で被覆し、それらの作
用によってＡΩ配線の腐食を抑制し、耐食信頼性の高い
樹脂封止型半導体装置を提供する。In the present invention, a chelate compound film is formed on the surface of the lead frame, lead wire, and AQ wiring after wire bonding to suppress the elution of corrosive metal ions from the lead frame and lead wire, while the Afl wiring itself also has high corrosion resistance. The present invention provides a resin-sealed semiconductor device that is coated with a chelate compound film, suppresses corrosion of AΩ wiring by the action thereof, and has high reliability in corrosion resistance.
ワイヤボンディング後、リードフレーム、リードワイヤ
及びＡＱ配線の表面とキレート化剤とを接触させ、表面
に形成させたキレート化合物皮膜は、樹脂封止型半導体
装置の耐湿信頼性の向上に対し、次のような作用をする
。After wire bonding, the surfaces of the lead frame, lead wire, and AQ wiring are brought into contact with a chelating agent, and the chelate compound film formed on the surface has the following effects on improving the moisture resistance reliability of resin-encapsulated semiconductor devices. It acts like this.
一般に、ＡＱ配線の腐食は次のように考えられている。Generally, corrosion of AQ wiring is considered as follows.
外界からの水分が、リードフレームとレジンとの界面か
ら浸入し、レジンからのＣＱ−。Moisture from the outside world enters from the interface between the lead frame and the resin, causing CQ- from the resin.
Ｂｒ−などの腐食性無機イオン、ＨＣＯＯ−。Corrosive inorganic ions such as Br-, HCOO-.
ＣｔｌａＣＯＯ″″などの酸性有機イオン、難燃化剤５
ｂｚｏａからのＳｂ３＋、あるいは、構成材料からの金
属イオン等を溶解し、ＡＱ配線部に酸性の液膜が形成さ
れ、ＡＱ配線が腐食される。Acidic organic ions such as CtlaCOO'', flame retardants5
Sb3+ from bzoa or metal ions from the constituent materials are dissolved, an acidic liquid film is formed on the AQ wiring portion, and the AQ wiring is corroded.
また、リードフレーム、あるいは、リードワイヤにＣｕ
系の材料を用いると、ＡＱ配線と同様に腐食し、溶出し
たＣｕｚ＋がＡＱ配線表面に還元析出する際、ＡＱより
電子を奪うためにＡＱが酸化され腐食する。このＣｕ系
材料から溶出したＣｕ２＋の作用により、ＡＱ配線の腐
食が著しく加速される。従って、半導体装置の耐湿信頼
性を向上させるには、パッケージ内への水分侵入を防ぎ
、ＡＱ配線、リードワイヤ及びリードフレームの耐食性
を向上させる必要がある。In addition, the lead frame or lead wire may be made of Cu.
If such a material is used, it will corrode in the same way as the AQ wiring, and when the eluted Cuz+ is reduced and precipitated on the surface of the AQ wiring, AQ is oxidized and corroded because it takes electrons from AQ. The corrosion of the AQ wiring is significantly accelerated by the action of Cu2+ eluted from the Cu-based material. Therefore, in order to improve the moisture resistance reliability of a semiconductor device, it is necessary to prevent moisture from entering the package and improve the corrosion resistance of AQ wiring, lead wires, and lead frames.
そこで、ＡＱ配線のみならずＣｕ系材料についても、そ
の表面の耐食性及び樹脂との密着性を高めることが出来
る表面処理法について検討した。Therefore, we investigated a surface treatment method that can improve the corrosion resistance of the surface and the adhesion with resin, not only for AQ wiring but also for Cu-based materials.
そして本発明者らは、ＡＱ及びＣｕのいずれともキレー
ト化合物を形成する有機キレート化剤を、ＡＱ配線、Ｃ
ｕリードフレーム及びＣｕリードワイヤの表面と接触す
ると、水に難溶性で、かつ、保護性の高い化合物皮膜が
形成されることを見い出した。The present inventors used an organic chelating agent that forms a chelate compound with both AQ and Cu for AQ wiring, C
It has been found that when it comes into contact with the surfaces of the U lead frame and the Cu lead wire, a compound film that is poorly soluble in water and highly protective is formed.
この処理によって生成するフレーム、ワイヤ配線上のキ
レート化合物皮膜は耐食性が高く、下地金属の腐食を抑
制する性質がある。The chelate compound film on the frame and wire wiring produced by this treatment has high corrosion resistance and has the property of inhibiting corrosion of the underlying metal.
従って、ＡＱ配線自体の耐食性を向上させるばかりでな
く、リードフレームやリードワイヤを防食することによ
り、リードフレームやリードワイヤからのＣｕ”十のよ
うな腐食性金性イオンの溶出を抑制することができ、間
接的にＡＱ配線の耐食性を改善することができる。Therefore, in addition to improving the corrosion resistance of the AQ wiring itself, by protecting the lead frame and lead wires, it is possible to suppress the elution of corrosive gold ions such as Cu'' from the lead frames and lead wires. This can indirectly improve the corrosion resistance of AQ wiring.
また、リードフレーム、リードワイヤ及びＡＱ配線の表
面が有機物であるキレート化合物皮膜で被覆されている
ので、同じ有機物であるモールドレジンとの密着性が改
善され、その結果、外界からの水分の浸入を阻止するこ
とができ、この点でも半導体装置としての耐湿信頼性を
高めることができる。In addition, since the surfaces of the lead frame, lead wires, and AQ wiring are coated with a chelate compound film, which is an organic substance, the adhesion with the mold resin, which is also an organic substance, is improved, and as a result, the intrusion of moisture from the outside world is prevented. In this respect as well, the moisture resistance reliability of the semiconductor device can be improved.
そして、有機系キレート化剤による処理は、無機物処理
のように水分を必ずしも必要とせず、処理後の水分残留
の影響は極めて小さい。また、有機系キレート化剤は有
機溶媒に溶解し易いので、揮発性溶媒に溶かした溶液を
使えば、処理後の洗浄工程の省力化が図れる等、工程上
の優れた利点もある。Furthermore, treatment with an organic chelating agent does not necessarily require moisture unlike inorganic treatment, and the influence of residual moisture after treatment is extremely small. In addition, since organic chelating agents are easily dissolved in organic solvents, the use of solutions dissolved in volatile solvents has excellent process advantages, such as saving labor in the cleaning step after treatment.
このような作用を示すことができる有機キレート化剤は
、ＡＱ、Ｃｕ、Ｎｉ、Ｆｅとの反応で、水に難溶性で、
かつ、安定度の高いキレート化合物を形成するものが好
ｉしく、例えば、オキシン、クペロン、１−（２−テノ
イル）−３，３，３−トリフルオルアセトン、ベンジル
アセトン、２゜３−ジヒドロキシナフタリン、２−ヒド
ロキシ−３−カルボキシナフタリン、５−フェニルアゾ
トロポロンがある。Organic chelating agents that can exhibit such effects are poorly soluble in water through reaction with AQ, Cu, Ni, and Fe.
Also, compounds that form highly stable chelate compounds are preferred, such as oxine, cuperone, 1-(2-thenoyl)-3,3,3-trifluoroacetone, benzylacetone, and 2゜3-dihydroxynaphthalene. , 2-hydroxy-3-carboxynaphthalene, and 5-phenylazotropolone.
以下、、本発明の実施例を図により説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Ｆｅ−４２Ｎｉ合金、あるいは、Ｃｕ合金製のリードフ
レーム１上の部分Ａｇメッキを施こした一次側電極２と
、タブ３上にダイボンディングした半導体素子４上のＡ
Ｑ二次側電極５とを、還元雰囲気中でＣｕリードワイヤ
６でワイヤボンディングする。その後、水酸化ナトリウ
ムによりρ１１９に調整した０、００５Ｍのオキシン水
溶液（液温８０℃）中に５ ｍｉｎ浸漬し、リードフレ
ーム、Ｃｕリードワイヤ及びＡＱ配線表面にキレートを
形成させる。以上の処理を施こしたものを、エポキシ系
樹脂からなる封止樹脂８で封止して半導体装置を製造し
た。７はキレート化合物皮膜。A primary electrode 2 partially plated with Ag on a lead frame 1 made of Fe-42Ni alloy or Cu alloy, and A on a semiconductor element 4 die-bonded on a tab 3.
Wire bonding is performed with the Q secondary electrode 5 using a Cu lead wire 6 in a reducing atmosphere. Thereafter, it is immersed for 5 minutes in a 0.005 M oxine aqueous solution (liquid temperature: 80° C.) adjusted to ρ119 with sodium hydroxide to form a chelate on the surfaces of the lead frame, Cu lead wire, and AQ wiring. The product subjected to the above treatment was sealed with a sealing resin 8 made of epoxy resin to produce a semiconductor device. 7 is a chelate compound film.
比較のために、キレート保護皮腺処理を施こさないもの
についても、同様な工程で半導体装置を製造した。For comparison, a semiconductor device without chelate protective skin treatment was also manufactured using the same process.
以上の製造した半導体装置を、＠度１２０℃、相対湿度
９５％のプレツシャークツ力中に放置し、ＡＱ配線断線
不良発生時間を測定した。その結果を第１表に示す。The semiconductor device manufactured above was left in a pressurized force at 120° C. and 95% relative humidity, and the time required for AQ wiring disconnection failure to occur was measured. The results are shown in Table 1.
第 １ 表
第１表から明らかなように、本発明方法Ｎα１゜２．３
．４より製造された半導体装置は、従来方法で製造され
た半導体装置Ｎα５，６，７．８に比べ著しく耐湿信頼
性が向上していることがわかる。Table 1 As is clear from Table 1, the method of the present invention Nα1°2.3
．． It can be seen that the semiconductor device manufactured by No. 4 has significantly improved moisture resistance reliability compared to the semiconductor devices Nα5, 6, and 7.8 manufactured by the conventional method.
本発明によれば、リードフレーム、リードワイヤ、及び
Ａｆｌ配線の耐食性を向上させ、さらに、リードフレー
ムとレジンとの密着性を高め、外界から半導体内部への
水分の浸入を防止し、耐湿信頼性の著しく優れた半導体
装置を提供することができる。According to the present invention, the corrosion resistance of the lead frame, lead wire, and Afl wiring is improved, and furthermore, the adhesion between the lead frame and the resin is improved, and moisture infiltration from the outside world into the inside of the semiconductor is prevented, and moisture resistance reliability is improved. It is possible to provide a semiconductor device with significantly superior properties.
図は、本発明の一実施例の半導体装置の断面図である。 The figure is a sectional view of a semiconductor device according to an embodiment of the present invention.
Claims (1)
りワイヤボンディングした後、前記リードフレーム、前
記リードワイヤ及びアルミニウム配線の表面を有機物で
処理するものにおいて、キレート化剤により、表面にキ
レート化合物皮膜を形成させる工程を含むことを特徴と
する半導体装置の製造方法。 ２、前記キレート化剤は、オキシンおよびその誘導体、
クペロンおよびその誘導体アミノフェノール類、オキシ
カルボン酸類、ポリカルボン酸類、アリザリンおよびそ
の誘導体、α−アミノ酸類、ｏ−ヒドロオキシアゾベン
ゼンスルホン酸類、β−ジケトン類、ナフタリンおよび
その誘導体トロポロン類、からなる化合物群から選択し
た少なくとも一種類の化合物であることを特徴とする特
許請求の範囲第１項記載の半導体装置の製造方法。[Scope of Claims] 1. After wire-bonding a semiconductor element and a lead frame with a lead wire, the surfaces of the lead frame, the lead wire, and the aluminum wiring are treated with an organic substance, in which the surface is treated with a chelating agent. A method for manufacturing a semiconductor device, comprising the step of forming a chelate compound film. 2. The chelating agent is oxine and its derivatives,
A group of compounds consisting of cuperone and its derivatives aminophenols, oxycarboxylic acids, polycarboxylic acids, alizarin and its derivatives, α-amino acids, o-hydroxyazobenzenesulfonic acids, β-diketones, naphthalene and its derivatives tropolones. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the compound is at least one type of compound selected from the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62125902A JPS63291443A (en) | 1987-05-25 | 1987-05-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62125902A JPS63291443A (en) | 1987-05-25 | 1987-05-25 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63291443A true JPS63291443A (en) | 1988-11-29 |
Family
ID=14921735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62125902A Pending JPS63291443A (en) | 1987-05-25 | 1987-05-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63291443A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000022662A1 (en) * | 1998-10-12 | 2000-04-20 | Ekc Technology, Ltd | Inhibition of titanium corrosion |
-
1987
- 1987-05-25 JP JP62125902A patent/JPS63291443A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000022662A1 (en) * | 1998-10-12 | 2000-04-20 | Ekc Technology, Ltd | Inhibition of titanium corrosion |
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