JPS59188928A - Process of sheathing for semiconductor device - Google Patents
Process of sheathing for semiconductor deviceInfo
- Publication number
- JPS59188928A JPS59188928A JP6332683A JP6332683A JPS59188928A JP S59188928 A JPS59188928 A JP S59188928A JP 6332683 A JP6332683 A JP 6332683A JP 6332683 A JP6332683 A JP 6332683A JP S59188928 A JPS59188928 A JP S59188928A
- Authority
- JP
- Japan
- Prior art keywords
- water washing
- semiconductor device
- leads
- treatment
- activator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000005406 washing Methods 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 10
- 239000011347 resin Substances 0.000 claims abstract description 10
- 239000012190 activator Substances 0.000 claims abstract description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 7
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 7
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 5
- 150000002367 halogens Chemical class 0.000 claims abstract description 5
- 230000007935 neutral effect Effects 0.000 claims abstract description 4
- 230000002378 acidificating effect Effects 0.000 claims abstract description 3
- 238000003672 processing method Methods 0.000 claims description 2
- 238000001994 activation Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 238000011282 treatment Methods 0.000 abstract description 26
- 238000007747 plating Methods 0.000 abstract description 15
- 238000005260 corrosion Methods 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 abstract description 12
- 238000007789 sealing Methods 0.000 abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005238 degreasing Methods 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 abstract description 2
- 230000004913 activation Effects 0.000 abstract 2
- 239000000243 solution Substances 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 238000005342 ion exchange Methods 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- NJYFRQQXXXRJHK-UHFFFAOYSA-N (4-aminophenyl) thiocyanate Chemical class NC1=CC=C(SC#N)C=C1 NJYFRQQXXXRJHK-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005237 degreasing agent Methods 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体装置の外装処理方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a method for processing the exterior of a semiconductor device.
第１図は、樹脂封止された半導体装置の断面図である。 FIG. 1 is a cross-sectional view of a resin-sealed semiconductor device.
図中１は、アイランド２上に装着された素子である。素
子１は、デンディング線３を介してインナーリード４に
接続されている。1 in the figure is an element mounted on the island 2. The element 1 is connected to an inner lead 4 via a leading wire 3.
素子１、デンディング線３、アイランド２及びインナー
リード４は、エポキシ樹脂等からなる樹脂封止体５で一
体に封止されている。樹脂封止体５の側部には、アウタ
ーリード６が導出されている。The element 1, the extending wire 3, the island 2, and the inner lead 4 are integrally sealed with a resin sealing body 5 made of epoxy resin or the like. Outer leads 6 are led out from the sides of the resin sealing body 5 .
このように構成された半導体装置１ｏは、次のよう処し
て外装処理が施される。先ず、樹脂封止後の半導体装置
ｘｏｌｔｃ水酸−化す） ＩＪウムや炭酸ナトリウムか
らなる脱脂剤でアルカリ脱脂処理を施す。次いで、これ
を水洗してから所定の中和液で中和する。更に水洗した
後塩酸又はフッ化アンモン等を含む活性化剤で、アウタ
ーリード６に活性化処理を施す。次いで、アウターリー
ド６に塩素を３〜５％含有するフラックスを塗布し、錫
メッキ等のメッキ処理後、水洗して乾燥し、外装処理を
完了する（従来例１）。The semiconductor device 1o configured in this manner is subjected to an exterior treatment as follows. First, the semiconductor device after being sealed with resin is subjected to alkaline degreasing treatment using a degreasing agent made of IJium or sodium carbonate. Next, this is washed with water and then neutralized with a predetermined neutralizing liquid. After further washing with water, the outer lead 6 is activated using an activating agent containing hydrochloric acid, ammonium fluoride, or the like. Next, a flux containing 3 to 5% chlorine is applied to the outer lead 6, and after plating treatment such as tin plating, the outer lead 6 is washed with water and dried to complete the exterior treatment (Conventional Example 1).
このような外装処理を施された半導体装置１０・は、８
５℃、湿度８５チＲＨの雰囲気中で２９００〜９０００
時間放置すると、下記表に示す如く、４０００時間以上
経過すると素子１に形成された電極に９．５〜１０．（
ｌ腐食が起きることが確認されている。The semiconductor device 10 which has been subjected to such exterior treatment is 8
2900-9000 in an atmosphere of 5℃ and humidity 85℃RH
When left for a period of time, as shown in the table below, after 4000 hours or more, the electrodes formed on element 1 have a 9.5 to 10. (
It has been confirmed that corrosion occurs.
また、前述の外装処理に代えて゛錫メッキの代わりに溶
融半田メッキを施した後、水洗、乾燥を行う方法が採用
されている（従来例２）。このような外装処理の施され
た半導体装置１ｏでは、同表に併記した如く、前述と同
様の放置試験を行うと、４０００時間経過後に０．６〜
１０．０チの電極腐食が発生することが確認されている
。Furthermore, in place of the above-mentioned exterior treatment, a method has been adopted in which molten solder plating is applied instead of tin plating, followed by washing and drying (Conventional Example 2). In the semiconductor device 1o which has been subjected to such an exterior treatment, as shown in the same table, when a storage test similar to that described above is performed, after 4000 hours elapsed, 0.6~
It has been confirmed that electrode corrosion of 10.0 inches occurs.
このような従来例１，２で示す電極の腐食は、次のよう
に発生すると考えられる。第２図に示す如く、インナー
リード４と樹脂封止体５間、アイランド２と樹脂封止体
間及びボンディング線３と樹脂封止体間には、隙間７，
８．９がある。このため外装処理液がこの隙間７，８．
９に侵入する。従って、外装処理液が侵入した状態で長
時間に亘って高温の熱処理を施すと、この侵入した外装
処理液中の活性イオンが素子１の内部に侵入して電極を
腐食するものと考えられる。しかも、従来の外装処理液
中には、アルカリ金属やノ・ロダン化合物のような活性
化力の強い元素が含まれているため、素子特性を著しく
劣化し、半導体装置の信頼性を低下する問題があった。It is thought that the corrosion of the electrodes shown in Conventional Examples 1 and 2 occurs as follows. As shown in FIG. 2, there is a gap 7 between the inner lead 4 and the resin seal 5, between the island 2 and the resin seal, and between the bonding wire 3 and the resin seal.
There is 8.9. Therefore, the exterior treatment liquid is applied to these gaps 7, 8.
Invade 9. Therefore, if heat treatment is performed at a high temperature for a long time with the exterior treatment liquid infiltrated, it is thought that the active ions in the exterior treatment liquid will enter the inside of the element 1 and corrode the electrodes. Furthermore, conventional packaging treatment liquids contain elements with strong activating power, such as alkali metals and non-rhodan compounds, which significantly deteriorate device characteristics and reduce the reliability of semiconductor devices. was there.
本発明は、電極等の腐食を防止して信頼性を向上させる
ことができる半導体装置の外装処理方法を提供すること
をその目的とするものである。An object of the present invention is to provide a method for processing the exterior of a semiconductor device, which can prevent corrosion of electrodes and the like and improve reliability.
本発明は、アルカリ金属やハロダン元素を含まない活性
化剤及びイオン交換水による洗浄工程を設けたことによ
り、電極等の腐食を防止して信頼性を向上させることが
できる半導体装置の外装処理方法である。The present invention provides an exterior treatment method for semiconductor devices that can prevent corrosion of electrodes and improve reliability by providing a cleaning step using an activator and ion-exchanged water that do not contain alkali metals or halodane elements. It is.
以下、本発明の実施例について図面を参照して説明する
。Embodiments of the present invention will be described below with reference to the drawings.
先ず、第１図に示すようなアイランド２上に所定の素子
ｌを装着し、素子１とインナーリード４とをデンディン
グ線３で接続すると共に、これをアウターリード６が外
部に導出するように樹脂封止体５で一体に封止した半導
体装置１０を用意する。この半導体装置皿をアウターリ
ード６が汚染しないように保持し、脱脂処理を施さずに
イオン交換水で洗浄する。First, a predetermined element 1 is mounted on the island 2 as shown in FIG. A semiconductor device 10 integrally sealed with a resin sealing body 5 is prepared. This semiconductor device tray is held so that the outer leads 6 are not contaminated, and is washed with ion-exchanged water without degreasing.
次いで、アウターリード６に活性化剤で活性化処理を施
した一後、水洗してから半田メッキ、錫メッキ或は銀メ
ッキ等のメッキ処理を施す。Next, the outer leads 6 are activated with an activating agent, washed with water, and then subjected to a plating process such as solder plating, tin plating, or silver plating.
ここで、活性化剤としては、アルカリ金属やハロゲン元
素を含まない、硫酸水溶液や硫酸塩溶液からなる酸性若
しくは中性の溶液を使用する。Here, as the activator, an acidic or neutral solution containing no alkali metal or halogen element and consisting of an aqueous sulfuric acid solution or a sulfate solution is used.
然る後、これに水洗、湯洗を施した後乾燥処理を施して
外装処理を完了する。Thereafter, it is washed with water and hot water, and then dried to complete the exterior treatment.
このようにして処理された半導体装置１゜（実施例１）
を８５℃、湿度８５％皿の雰囲気中で２０００〜９００
０時間放置し、素子１の電極部の腐食状況を調べたとこ
ろ上記表に併記する結果を得た。Semiconductor device 1° processed in this way (Example 1)
2000-900 in a dish atmosphere at 85℃ and 85% humidity.
After leaving it for 0 hours, the corrosion status of the electrode portion of element 1 was examined, and the results shown in the table above were obtained.
また、実施例の外装処理工程のメッキ処理の前に湯洗処
理を加え、かつ、活性化剤にはハロゲン元素を含んだも
のを使用した方法（比較例１）、比較例１の外装処理工
程のメッキ処理の代わシに、フラックス（ハロゲン元素
を含まない）塗布、溶融半田メッキ処理を施すようにし
た方法（比較例２）、比較例２の外装処理工程のフラッ
クス塗布前の湯洗処理を省き、かつ、活性化剤には−・
ａダン元素を含まないものを使用した方法（比較例３）
、比較例２の外装処理工程の７ラツクス塗布処理でへロ
ダン元素を含有したフラックスを用いた方法（比較例４
）の各４種類の方法で半導体装置１０に外装処理を施し
た。処理された半導体装置１０に前述と同様の電極腐食
試験を行い、その結果を上記表に併記した。In addition, a method (Comparative Example 1) in which hot water washing was added before the plating process in the exterior treatment process of the example and an activator containing a halogen element was used (Comparative Example 1), and the exterior treatment process of Comparative Example 1 A method in which flux (not containing halogen elements) was applied and molten solder plating was applied instead of the plating process (Comparative Example 2), and hot water washing before flux application in the exterior treatment process of Comparative Example 2 was applied. Omit and activator-・
A method using a material that does not contain the Dan element (Comparative Example 3)
, a method using a flux containing the herodan element in the 7-lux coating treatment in the exterior treatment step of Comparative Example 2 (Comparative Example 4)
) The semiconductor device 10 was subjected to exterior processing using four different methods. The processed semiconductor device 10 was subjected to the same electrode corrosion test as described above, and the results are also listed in the table above.
上記表から明らかな如く、活性化剤やフラックスにへロ
ダン元素（アルカリ金属がある場合には及びアルカリ金
属）を含まないものを使用し、脱脂処理の代わりにイオ
ン交換水による洗浄を行い、かつ、湯洗処理を加えるよ
うにした実施例による半導体装置の外装処理方法では、
９０００時間を経過して初めて０．５％程の電極の腐食
が起きることが判る。更に、比較例３から湯洗処理工程
か多い程この効果が助長されることが判る。As is clear from the table above, activators and fluxes that do not contain herodane elements (and alkali metals, if any) are used, cleaning with ion-exchanged water is performed instead of degreasing, and In the exterior processing method for a semiconductor device according to an embodiment in which a hot water washing process is added,
It can be seen that electrode corrosion of about 0.5% occurs only after 9000 hours have elapsed. Furthermore, from Comparative Example 3, it can be seen that this effect is enhanced as the number of hot water washing treatment steps increases.
このようにして実施例によるものでは外装処理後に腐食
の発生を抑えて信頼性の高い半導体装置を得ることかで
きる。In this manner, in the embodiment, occurrence of corrosion can be suppressed after the exterior treatment, and a highly reliable semiconductor device can be obtained.
以上説明した如く、本発明に係る半導体装置の外装処理
方法によれば、電極等の腐食を防止して信頼性を向上さ
せることができる等顕著な効果を有するものである。As explained above, the method for processing the exterior of a semiconductor device according to the present invention has remarkable effects such as being able to prevent corrosion of electrodes and the like and improve reliability.
第１図は、樹脂封止半導体装置の構造を示す断面図、第
２図は、同半導体装置に生ずる腐食の発生原因を示す説
明図である、
１・・・素子、２アイランド、３・・・？ンデイング線
、４・・・インナーリード、５・・・樹脂封止体、６・
・・アウターリード、１０・・・半導体装置。
出願人代理人 弁理士 鈴 江 武 彦１１９FIG. 1 is a cross-sectional view showing the structure of a resin-sealed semiconductor device, and FIG. 2 is an explanatory diagram showing the causes of corrosion that occurs in the semiconductor device. 1... Element, 2 Island, 3...・? nding wire, 4...inner lead, 5...resin sealing body, 6...
... Outer lead, 10... Semiconductor device. Applicant's agent Patent attorney Takehiko Suzue 119
Claims (1)
を樹脂封止した半導体装置をイオン交換水で洗浄し、次
いで、ハロゲン元素やアルカリ金属不純物を含まない酸
性または中性の活性化剤で前記アウターリードに活性化
処理を施し、これを水洗した後前記アウターリードにメ
、生処理を行い、更にこれに水洗及び湯洗処理を施すこ
とを特徴とする半導体装置の外装処理方法０A semiconductor device in which predetermined elements are sealed with resin so that the outer leads lead outside is washed with ion-exchanged water, and then the outer leads are washed with an acidic or neutral activator that does not contain halogen elements or alkali metal impurities. A semiconductor device exterior processing method 0, characterized in that the leads are subjected to an activation process, the leads are washed with water, the outer leads are subjected to a green process, and then the outer leads are subjected to water washing and hot water washing processes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6332683A JPS59188928A (en) | 1983-04-11 | 1983-04-11 | Process of sheathing for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6332683A JPS59188928A (en) | 1983-04-11 | 1983-04-11 | Process of sheathing for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59188928A true JPS59188928A (en) | 1984-10-26 |
| JPH0380342B2 JPH0380342B2 (en) | 1991-12-24 |
Family
ID=13226015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6332683A Granted JPS59188928A (en) | 1983-04-11 | 1983-04-11 | Process of sheathing for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59188928A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155651U (en) * | 1987-03-31 | 1988-10-12 |
-
1983
- 1983-04-11 JP JP6332683A patent/JPS59188928A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155651U (en) * | 1987-03-31 | 1988-10-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0380342B2 (en) | 1991-12-24 |
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