JPS58119661A - Manufacture of diode electrode glass sealed in dhd method - Google Patents
Manufacture of diode electrode glass sealed in dhd methodInfo
- Publication number
- JPS58119661A JPS58119661A JP362682A JP362682A JPS58119661A JP S58119661 A JPS58119661 A JP S58119661A JP 362682 A JP362682 A JP 362682A JP 362682 A JP362682 A JP 362682A JP S58119661 A JPS58119661 A JP S58119661A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- diode
- glass
- copper
- glass sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 title abstract description 15
- 239000011521 glass Substances 0.000 title abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- 238000000465 moulding Methods 0.000 claims abstract description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000005751 Copper oxide Substances 0.000 claims abstract description 4
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 239000008188 pellet Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 12
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 12
- 229940112669 cuprous oxide Drugs 0.000 description 12
- CDMADVZSLOHIFP-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane;decahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 CDMADVZSLOHIFP-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910021538 borax Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000018984 mastication Effects 0.000 description 1
- 238000010077 mastication Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
この発明はＤＨＤ型ガラス封止ダイオード電極の製造法
に係り、詳しくのべると、小径部と大径Ｓを有する電極
を釘打ち加工またＦｉｉ形加工によって組合わせて得ら
れるリードレスダイオード電極において、釘打ち加工ま
九Ｆｉ成形加工徒に１１極表面銅層に亜酸化銅皮膜を形
成させることを特徴とするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a DHD type glass-sealed diode electrode, and more specifically, it is obtained by combining an electrode having a small diameter portion and a large diameter S by nailing or Fii shape processing. The leadless diode electrode is characterized by forming a cuprous oxide film on the copper layer on the surface of the 11 electrodes using a nailing process and a nine-fi molding process.
現在市販されているダイオード電極の殆んどは第１図に
示すように両端部にリード線１ｔＡ備した電極２間に半
萼体巣子８を装着し、電極２の胸囲を封止ガラス４にて
封止したＤＨＤ型ガラス封止ダイオード電極であシ、こ
れをプリント基板等に装着する際には、プリント基板の
装着孔に細長いリード線１を挿入して用いなければなら
ない。Most of the diode electrodes currently on the market are equipped with a half-calyx nest 8 between the electrodes 2 with lead wires of 1 tA at both ends, as shown in FIG. This is a DHD type glass-sealed diode electrode which is sealed with a glass-sealed diode.When mounting this on a printed circuit board or the like, a long and thin lead wire 1 must be inserted into a mounting hole of the printed circuit board.
このためそり作業に多大の１歌を要するとともにダイオ
ード自体の製造過程（おいてもリード線を有しているた
めに自動化作業の大きな障害となっているのである。For this reason, it takes a long time to perform the warping process, and the manufacturing process of the diode itself (as it has lead wires) is a major hindrance to automated work.
このようなことから第２図のようなリード線を有しない
、プリント基板への装着容易なりＨＤＱガラス封止り一
ドレスダイオードが考案され、その需要が次４ＪＪＫ急
増しつつある。For this reason, an HDQ glass-sealed dress diode, which does not have lead wires as shown in FIG. 2 and can be easily mounted on a printed circuit board, was devised, and the demand for this diode is rapidly increasing.
そしてこのようなリードレスダイオードの電極２には銅
層６を被覆した心線６（例えｔｊ：Ｆｅ−Ｎｉ線）の表
面に硼砂ガラス層またＦｉ却酸酸化銅層７施したジュメ
ット線（第８図）が使用され、これを一定員に９１１ｔ
ｈＬ、釘打ち加工を施こして第４図に示すような小径ｓ
８と大径ｓ９からなる電極２として用意する。The electrode 2 of such a leadless diode is a Dumet wire (a Dumet wire) in which the surface of the core wire 6 (for example, tj: Fe-Ni wire) coated with a copper layer 6 is coated with a borax glass layer or a Fi oxide copper oxide layer 7. Figure 8) is used, and this is used for a certain number of 911 tons.
hL, small diameter s as shown in Figure 4 after nailing
8 and a large diameter s9 is prepared as the electrode 2.
そしてこのような形状の電極２の中央ｓＫ第２図のよう
にシリコン等の半導体索子８を装着し、ＩＩＩＥ極２の
周囲を封止ガラス４で封止すること−によってダイオー
ドを得ている。A diode is obtained by attaching a semiconductor cable 8 made of silicon or the like to the center of the electrode 2 having such a shape as shown in FIG. 2, and sealing the periphery of the IIIE electrode 2 with a sealing glass 4. .
ところが電極２表面の硼砂ガラス層または亜酸化銅層７
Ｉｒｉ、非常に脆いため釘打ち加工や成形加工のような
強い力が加えられると、剥離あるいは疵が発生しやすい
。そしてガラス封止ダイオードにとってこの表面硼砂ガ
ラス層または亜酸化銅層の欠損は、ガラス封止後の気密
性を著しく低下させ、リーク不良などの大きな要因とな
るのである。However, the borax glass layer or cuprous oxide layer 7 on the surface of the electrode 2
Since it is extremely brittle, peeling or flaws are likely to occur when strong force is applied, such as during nailing or molding. For glass-sealed diodes, this loss of the surface borax glass layer or cuprous oxide layer significantly reduces the airtightness after glass-sealing and becomes a major cause of leakage defects.
この発明はＤＨＤ型ガラス封止ダイオード電極における
ｔ記の欠点を解消すべく検討の結果、得られたものであ
って、銅層を被覆した心線例えばＦｅ−Ｎｉ 線に対す
る亜酸化銅処理を行う前に、心線を釘打ち加工して第４
図のような小径ｓ８と大径部９からなる形状の電極２を
作成しておき、そののちこの電極２表面に亜酸化銅層を
形成させることを特徴とするものであり、これによって
ガラス封止部の疵をなくし、完全にガラスと密着させて
ダイオードの信頼性を高め、ジュメット線電極表面に起
因するリーク不良を完全に除去することに成功したもの
である。This invention was obtained as a result of studies to eliminate the drawbacks mentioned above in DHD type glass-sealed diode electrodes, and it involves applying cuprous oxide treatment to a core wire coated with a copper layer, such as a Fe-Ni wire. First, nail the core wire and attach it to the fourth
The feature is that an electrode 2 having a shape consisting of a small diameter part s8 and a large diameter part 9 as shown in the figure is prepared in advance, and then a cuprous oxide layer is formed on the surface of this electrode 2, thereby forming a glass seal. We have succeeded in eliminating flaws in the stop, completely adhering to the glass, increasing the reliability of the diode, and completely eliminating leakage defects caused by the Dumet wire electrode surface.
特にガラスと密着する小径部８を意図的に変形させて、
ガラスとの濡れ性を改善するために第５図のような変形
形状の電極を作成する時にこの発明の方法は効果的であ
る。In particular, by intentionally deforming the small diameter portion 8 that comes into close contact with the glass,
The method of the present invention is effective when creating an electrode having a deformed shape as shown in FIG. 5 in order to improve wettability with glass.
以下この発明の実施例として電極を釘打ち加工後亜酸化
銅による表面酸化処理の方法について説明する。As an example of the present invention, a method of surface oxidation treatment using cuprous oxide after nailing an electrode will be described below.
まず銅被覆した０、１〜１．５−一まで伸線したＦｅ−
Ｎｉ素練を用意する。そしてこの素線を釘打ちしながら
第４図のような形状の電極２を作成する。First, copper coated Fe- wire was drawn from 0.1 to 1.5-1.
Prepare Ni mastication. Then, by nailing this wire, an electrode 2 having a shape as shown in FIG. 4 is created.
この時次工程の亜酸化銅処理において小径部８の端面が
酸化されるため、釘打ち加工時に該端面ＫＡｇペレット
１０を圧着する。またＨＡｇベレットを圧着させない場
合は亜酸化銅処理後に端面部のみ塩酸洗いをすることに
より該端ｉｆＩ都の黒化部分を除去することができる。At this time, since the end face of the small diameter portion 8 is oxidized in the next process of cuprous oxide treatment, the end face KAg pellet 10 is crimped during the nailing process. Further, when the HAg pellet is not crimped, the blackened portion of the end surface can be removed by washing only the end surface with hydrochloric acid after the cuprous oxide treatment.
このようにして用意した電極２を第６図に示すような連
続欧化処理工程にて処理する。The electrode 2 thus prepared is subjected to a continuous Europeanization process as shown in FIG.
まず電極２を送り駆動ｉ＠ＩＩＫよって回動するベルト
１２上にのせ、加熱炉１８に誘導し、該加熱炉内で９５
０℃以上に加熱したのち、水温４０℃以下の水冷却槽１
４中へ連続的に浸漬して急冷し、電極２の表面に亜酸化
銅皮膜のみを生成させるのである。First, the electrode 2 is placed on the belt 12 rotating by the feed drive i@IIK, guided to the heating furnace 18, and heated to 95 mm in the heating furnace.
Water cooling tank 1 with water temperature below 40℃ after heating to above 0℃
4 and quenched to form only a cuprous oxide film on the surface of the electrode 2.
従来のジュメット線においては、硼砂液を表面に勾−Ｋ
ｍ布した後にもう一度一−ナーあるいは加熱炉で焼付け
て硼砂ガラス層を生成させていたが、第４図あるいは第
５図のような異形の形状のものに＆ｌｌＩ砂液を塗布し
ようとしても均一に塗布することｉｔ ｔｍ Ｌいため
得られるａｉＩｐガラス層も不均一なものしか得られな
かった。In conventional Dumet wire, borax liquid is applied to the surface by gradient K.
After coating, a layer of borax glass was created by baking it again in a burner or heating furnace, but even when trying to apply &llI sand solution to an object with an irregular shape as shown in Fig. 4 or Fig. 5, it was not uniformly applied. Since the coating process was difficult, the resulting aiIp glass layer was also non-uniform.
しかし、この発明における第６図のような地理）ｊ法を
実椎するならば如何なる異形であっても銅表間Ｖｉ約−
に加熱されるので次工程の水冷却で一定のｌｌ！ｉｉ！
厚の亜酸化銅層が得られるのである。However, if we apply the Geography (Geography)j method as shown in Figure 6 in this invention, no matter how odd the shape is, the distance between the copper surfaces will be approximately -
Since it is heated to a certain level in the next process of water cooling, ii!
A thick cuprous oxide layer is obtained.
このようにして得られるこの発明による電極表面は、ガ
ラス封止に有害な亜酸化銅皮膜の剥離や疵がないため、
ダイオードの信頼性として極めて高いものが得られるの
である。The electrode surface according to the present invention obtained in this way has no peeling or flaws in the cuprous oxide film that are harmful to glass sealing.
Extremely high reliability of the diode can be obtained.
この発明の方法−箱た電極と従来法による電極を用いて
ガラス封止したのち、１００℃、１．５％塩酸液中に１
６分間浸漬したのちに生ずるガラス−ジュメット表面境
界の軸方向での酸浸蝕深さを測定したところ第７回置お
よび（Ｂｌのような結果が得られ、この発明による電極
が第７図＠）のように酸浸蝕が著しく小さくてダイオー
ドの信頼性が極めて高いことが実証された。Method of this invention - After sealing with glass using a boxed electrode and an electrode according to the conventional method,
The depth of acid erosion in the axial direction of the glass-Dumet surface boundary after 6 minutes of immersion was measured, and results were obtained at the 7th position and (Bl), and the electrode according to the present invention was shown in Fig. 7 @). It was demonstrated that acid corrosion was extremely small and the reliability of the diode was extremely high.
第１図はリード線つきダイオードの断面図、第２図はリ
ードレスＤＨＤ型ダイオードの断面図、第８図はこの発
明で得られる電極の平面図、１８４図は同じく斜視図、
第５図Ｆｉ崗しく他の実施例を示す斜視図、第６図はこ
の発明のＤＨＤ型ガラス封止ダイオード電極の製造工程
の一例を示す説明図、第７回置およびＣＢＩＦｉ従来法
とこの発明の方法により得られた電極の夫々の酸浸蝕深
さを示す図表である。
２・・・電極 ６・・・銅層 ７・・・亜酸化銅層
８・・・小径部 ９・・・大径部
待針出願人 住友電気工業株式会
社同 代理人 弁理士和１）昭第１図
第２図
２
第４図 第８図 第５図
？￥６図
第７図（Ａ）
第７図（Ｂ）
蟻蝕ヂ文（ｍｍ）Fig. 1 is a cross-sectional view of a diode with a lead wire, Fig. 2 is a cross-sectional view of a leadless DHD type diode, Fig. 8 is a plan view of an electrode obtained by the present invention, and Fig. 184 is a perspective view,
Fig. 5 is a perspective view showing another embodiment; Fig. 6 is an explanatory diagram showing an example of the manufacturing process of the DHD type glass-sealed diode electrode of the present invention; 7th rotation and CBIFi conventional method and the present invention. 3 is a chart showing the depth of acid corrosion of each electrode obtained by the method of FIG. 2... Electrode 6... Copper layer 7... Cuprous oxide layer 8... Small diameter section 9... Large diameter section pin Applicant: Sumitomo Electric Industries, Ltd. Agent: Patent Attorney Kazu 1) Showa Figure 1
Figure 2 2 Figure 4 Figure 8 Figure 5? ￥6 Figure Figure 7 (A) Figure 7 (B) Ant worm size (mm)
Claims (1)
工によって組合わせて得られるリードレスダイオード電
極において、釘打ち加工または成形加工後に電極表面銅
層に＠酸化銅皮膜を形成させることを特徴とするＤＩＤ
型ガクス封止ダイオード゛電極の製造法。A leadless diode electrode obtained by combining an electrode having a small diameter portion and a large diameter mt by nailing or molding, characterized in that a copper oxide film is formed on the copper layer on the electrode surface after the nailing or molding. DID
Manufacturing method of type GAX-sealed diode electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP362682A JPS58119661A (en) | 1982-01-11 | 1982-01-11 | Manufacture of diode electrode glass sealed in dhd method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP362682A JPS58119661A (en) | 1982-01-11 | 1982-01-11 | Manufacture of diode electrode glass sealed in dhd method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58119661A true JPS58119661A (en) | 1983-07-16 |
| JPS636153B2 JPS636153B2 (en) | 1988-02-08 |
Family
ID=11562701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP362682A Granted JPS58119661A (en) | 1982-01-11 | 1982-01-11 | Manufacture of diode electrode glass sealed in dhd method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119661A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61156242U (en) * | 1985-03-18 | 1986-09-27 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04344863A (en) * | 1991-05-23 | 1992-12-01 | Kobe Steel Ltd | High pressure casting method for high quality casting material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57122555A (en) * | 1981-01-23 | 1982-07-30 | Toshiba Corp | Glass sealed metallic piece electrode |
-
1982
- 1982-01-11 JP JP362682A patent/JPS58119661A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57122555A (en) * | 1981-01-23 | 1982-07-30 | Toshiba Corp | Glass sealed metallic piece electrode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61156242U (en) * | 1985-03-18 | 1986-09-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS636153B2 (en) | 1988-02-08 |
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