JPS6244876B2 - - Google Patents
Info
- Publication number
- JPS6244876B2 JPS6244876B2 JP56166378A JP16637881A JPS6244876B2 JP S6244876 B2 JPS6244876 B2 JP S6244876B2 JP 56166378 A JP56166378 A JP 56166378A JP 16637881 A JP16637881 A JP 16637881A JP S6244876 B2 JPS6244876 B2 JP S6244876B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- resin
- resin base
- support
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920005989 resin Polymers 0.000 claims description 47
- 239000011347 resin Substances 0.000 claims description 47
- 238000007789 sealing Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 14
- 238000000465 moulding Methods 0.000 claims description 14
- 238000007747 plating Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000005286 illumination Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Classifications
-
- H01L33/62—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
【発明の詳細な説明】
本発明は、リードフレーム形ステムにLED
（光発光ダイオード）を取付けた半導体発光素子
装置に関し、さらに詳しくは製造が容易で照明度
が高く、指向特性上好ましい半導体発光素子装置
に関する。[Detailed Description of the Invention] The present invention provides an LED on a lead frame type stem.
The present invention relates to a semiconductor light emitting element device equipped with a light emitting diode (light emitting diode), and more specifically to a semiconductor light emitting element device that is easy to manufacture, provides high illumination intensity, and is preferable in terms of directional characteristics.
従来、半導体発光素子装置は、セラミツクから
なるステム本体にリードを貫装したステムを用
い、個別ステムごとに発光素子の取付けなどの操
作を行つていたが、作業工程が複雑で自動化する
ことが困難であつた。またリードフレーム形のス
テムを用いたものは、自動化には適するが、セラ
ミツクからなるステム本体を取付けることが製造
上難しいため、発光素子装置の照明度を向上させ
ることができなかつた。 Conventionally, semiconductor light emitting device devices have used a stem made of ceramic with a lead inserted through the stem body, and operations such as attaching the light emitting device to each individual stem have been performed, but the work process is complex and cannot be automated. It was difficult. Further, those using a lead frame type stem are suitable for automation, but because it is difficult to manufacture the stem body made of ceramic, it has not been possible to improve the illumination intensity of the light emitting element device.
そこで本発明者は、このような欠点を解消する
ため、特願昭55−96753号において、新規な半導
体発光素子装置を提案した。この装置を、第１図
の斜視図と第２図の一部破断正面図とにより説明
すると、先ず、棒状基体１０には所定間隔で支持
リード１２ａ，１２ｂの対が多数個分岐してい
る。支持リード１２ａ，１２ｂの先端部には先端
面１２ｃ，１２ｄが外部に突出するように樹脂基
台１４が成形されて嵌着されている。一方の支持
リード１２ａの先端面１２ｃには半導体発光素子
１５がマウントされており、半導体発光素子１５
はボンデイングワイヤ１６によつて他方の支持リ
ード１２ｂの先端面１２ｄに接続されている。最
後に半導体素子１５とボンデイングワイヤ１６と
は、透明又は不透明なエポキシ樹脂などからなる
樹脂封止体１７によつて樹脂基台１４の封止面１
４ｃ上に封止される。このように構成された半導
体発光素子装置によれば、リードフレーム形ステ
ムであるため取扱いが容易で自動化に適し、樹脂
基台の反射効果によつて装置の照明度が高いなど
数々の利点を挙げることができる。 Therefore, in order to eliminate such drawbacks, the present inventor proposed a new semiconductor light emitting device device in Japanese Patent Application No. 55-96753. This device will be explained with reference to a perspective view in FIG. 1 and a partially cutaway front view in FIG. 2. First, a rod-shaped base 10 has a large number of pairs of support leads 12a and 12b branching at predetermined intervals. A resin base 14 is molded and fitted onto the tip ends of the support leads 12a, 12b so that the tip surfaces 12c, 12d protrude outside. A semiconductor light emitting device 15 is mounted on the tip end surface 12c of one of the support leads 12a.
is connected to the distal end surface 12d of the other support lead 12b by a bonding wire 16. Finally, the semiconductor element 15 and the bonding wire 16 are sealed on the sealing surface 1 of the resin base 14 by a resin sealant 17 made of transparent or opaque epoxy resin.
4c. The semiconductor light emitting device device configured in this manner has many advantages, such as being easy to handle and suitable for automation because of the lead frame type stem, and providing high illumination of the device due to the reflective effect of the resin base. be able to.
しかしながら、この装置では、発光素子が装着
される支持リードの先断面１２ｃ，１２ｄに樹脂
基台の成形によつて成形バリが発生するという問
題がある。現在の成形技術では成形バリの発生を
有効に防止する手段はないので、この問題を回避
するには、成形バリが支持リードの先端面まで到
達しない高さまで、支持リードを樹脂基台から突
出させなければならない。ところが、球冠状の樹
脂封止体１７の球面の中心は、封止方法や封止樹
脂などによつて異なるが、通常第２図のＡ点のよ
うに、発光素子より下に位置する場合が多く、支
持リードを樹脂基台から高く突出させればさせる
程、発光素子１５の位置がＡ点から離れて樹脂封
止体１７のレンズ効果が損なわれて、装置の照明
度が低くなり指向特性上好ましくないという欠点
がある。 However, this device has a problem in that molding burrs are generated on the tip sections 12c and 12d of the support leads to which the light emitting elements are mounted due to molding of the resin base. With current molding technology, there is no way to effectively prevent the occurrence of molding burrs, so in order to avoid this problem, the support lead should protrude from the resin base to a height where molding burrs do not reach the tip of the support lead. There must be. However, although the center of the spherical surface of the spherical crown-shaped resin encapsulant 17 varies depending on the encapsulant method and the encapsulant resin, it is usually located below the light emitting element, as shown at point A in FIG. The higher the support lead protrudes from the resin base, the further the position of the light emitting element 15 is from point A, the more the lens effect of the resin encapsulant 17 is impaired, and the illumination level of the device is lowered, resulting in directional characteristics. It has the disadvantage of being undesirable.
また、支持リード１２ａ，１２ｂの外部リード
となる部分には、半田付けに適するようにSnめ
つき等がされ、一方支持リードの先端面１２ｃ，
１２ｄには、マウントやワイヤボンデイングに適
するようにAgめつき等がされるなど、支持リー
ドの部分によつて異なつた処理等を施こすことが
多い。このような場合、外部リードに処理を施こ
すには一方の先端面に部分的保護処理等の手段を
加える必要がある。 In addition, the parts of the support leads 12a and 12b that will become external leads are plated with Sn to make them suitable for soldering, while the tip surfaces 12c and 12b of the support leads
12d is often subjected to different treatments depending on the part of the support lead, such as Ag plating to make it suitable for mounting and wire bonding. In such a case, in order to process the external lead, it is necessary to add a means such as partial protection treatment to one end surface.
従つて本発明は、特願昭55−96753号の半導体
発光素子装置を改良する発明であつて、本発明の
目的は発光素子装着面である支持リードを先端面
がバリなどの樹脂膜で被覆されない構造とするこ
と、発光素子が樹脂封止体の球面の中心近く指向
特性上好ましい位置に装着できるような構造とす
ること、また支持リードの部分によつて異なつた
処理をするに適する構造とすることなどの半導体
発光素子装置を提供することにある。 Therefore, the present invention is an invention for improving the semiconductor light emitting device device disclosed in Japanese Patent Application No. 55-96753, and an object of the present invention is to cover the support lead, which is the light emitting device mounting surface, with a resin film such as a burr on the tip end surface. The structure should be such that the light emitting element can be mounted near the center of the spherical surface of the resin molding body at a position favorable for directivity, and the structure should be suitable for performing different treatments depending on the part of the support lead. It is an object of the present invention to provide a semiconductor light emitting device device having the following features.
本発明の一実施例の装置は、第４図ａの部分破
断正面図及び第４図ｂの正面図に示した。また本
発明装置が個々に分離される前のリードフレーム
形ステムに連続している状態は第３図の斜視図に
示した。 A device according to one embodiment of the invention is shown in a partially cutaway front view in FIG. 4a and in a front view in FIG. 4b. The perspective view of FIG. 3 shows the state in which the device of the present invention is connected to the lead frame type stem before being separated into individual parts.
本発明の半導体発光素子装置は、第４図ａ及び
ｂにみるように、複数個の支持リード１２ａ，１
２ｂと、前記支持リード１２ａ，１２ｂの先端部
に成形するとともに封止面１４ｃを切削加工して
形成した樹脂基台１４と、前記樹脂基台１４の切
削加工により該封止面１４ｃと段差なく形成させ
た前記支持リードの露出した先端面１２ｃ，１２
ｄと、前記支持リードの先端面に装着された発光
素子１５及びボンデイングワイヤ１６と、該発光
素子１５を前記樹脂基台封止面１４ｃ上に封止し
た樹脂封止体１７とを具備する。また第３図のリ
ードフレーム形ステム１１では、多数の発光素子
装置の支持リード１２ａ，１１ｂが棒状基体１０
によつて連結されている。 As shown in FIGS. 4a and 4b, the semiconductor light emitting device device of the present invention has a plurality of support leads 12a, 1
2b, a resin base 14 formed by molding on the tips of the support leads 12a and 12b and cutting the sealing surface 14c, and a resin base 14 formed by cutting the resin base 14 so that there is no difference in level from the sealing surface 14c. Exposed tip surfaces 12c, 12 of the formed support leads
d, a light emitting element 15 and a bonding wire 16 attached to the tip end surface of the support lead, and a resin sealing body 17 in which the light emitting element 15 is sealed on the resin base sealing surface 14c. Further, in the lead frame type stem 11 shown in FIG. 3, the support leads 12a, 11b of a large number of light emitting device devices
connected by.
本発明の半導体発光素子装置が、特願昭55−
96753号のそれと対照して特徴とするところは、
支持リード１２ａ，１２ｂの先端部に成形した樹
脂基台１４の一面を切削加工して形成した樹脂基
台の封止面１４ｃを有し、かつ樹脂基台１４中に
埋め込まれた支持リード１２ａ，１２ｂの先端部
をも同時に切削加工して樹脂基台の封止面１４ｃ
と段差なく形成させた支持リードの先端面１２
ｃ，１２ｄを有する点にある。 The semiconductor light emitting device device of the present invention is disclosed in Japanese Patent Application No. 1983-
In contrast to that of No. 96753, the features are:
A support lead 12a, which has a sealing surface 14c of the resin base formed by cutting one side of the resin base 14 molded at the tips of the support leads 12a and 12b, and is embedded in the resin base 14; 12b is also cut at the same time to form a sealing surface 14c of the resin base.
The tip end surface 12 of the support lead formed without any step
c, 12d.
樹脂基台１４を形成する樹脂は、ガラス繊維強
化ポリエチレンテレフタレートの如く熱可塑性樹
脂或は不飽和ポリエステル樹脂プリミツクスの如
く熱硬化性樹脂で、白色など半導体発光素子の出
す光の反射効果が高く、耐熱温度が高く熱による
変色がほとんどなく、樹脂封止体１７とのなじみ
が良く、しかもめつき液による劣化が少ないもの
であれば如何なるものでもよい。特に熱硬化性樹
脂は、装置の半田付け時の加熱温度260℃に耐え
るとともに、樹脂基台１４の高速切削加工に耐え
る上で好ましい。樹脂基台の成形は射出、トラン
スフア、圧縮、注型など適宜の成形法が選択でき
る。 The resin forming the resin base 14 is a thermoplastic resin such as glass fiber-reinforced polyethylene terephthalate or a thermosetting resin such as unsaturated polyester resin Primix, which has a high reflective effect on light emitted by semiconductor light emitting devices such as white, and is heat resistant. Any material may be used as long as it has a high temperature, hardly discolors due to heat, has good compatibility with the resin sealing body 17, and is less likely to be deteriorated by the plating liquid. In particular, thermosetting resin is preferable because it can withstand the heating temperature of 260° C. during soldering of the device and can withstand high-speed cutting of the resin base 14. For molding the resin base, an appropriate molding method such as injection, transfer, compression, or casting can be selected.
樹脂基台の切削加工は、刃物による切削、砥石
による切削が採用できる。切削加工によつて支持
リードの先端面１２ｃ，１２ｄを露出させるの
で、金型構造、金型精度、成形条件などによつて
生ずるこの部分の成形バリを顧慮することなく、
如何なる場合でも樹脂膜に被覆されない先端面１
２ｃ，１２ｄを得て、発光素子１５の装着を確実
にすることができる。 For cutting the resin base, cutting with a knife or cutting with a grindstone can be employed. Since the tip surfaces 12c and 12d of the support leads are exposed by cutting, molding burrs in these parts that occur due to mold structure, mold precision, molding conditions, etc. are not taken into consideration.
Tip surface 1 that is not covered with a resin film under any circumstances
2c and 12d, the light emitting element 15 can be mounted securely.
また、支持リードの先端面１２ｃ，１２ｄにマ
ウント或はワイヤボンデイングに適するように
Agめつき等を施こし、支持リードの外部リード
となる部分に半田付けに適するようにSnめつき
等を施こすなど、異なつた処理をする場合には、
外部リードの処理をした後切削加工すれば先端面
の部分保護処理等の手段が必要でなくなる。 In addition, the tip surfaces 12c and 12d of the support leads are made suitable for mounting or wire bonding.
When performing different treatments, such as applying Ag plating, etc., and applying Sn plating, etc. to the part of the support lead that will become the external lead to make it suitable for soldering,
If cutting is performed after processing the external leads, there is no need for means such as partial protection processing of the tip end surface.
そしてまた、透明又は不透明エポキシ樹脂など
からなる樹脂封止体１７を球冠状に封止した場
合、球面の中心Ａが半導体発光素子１５の下に位
置することが多い。発光素子１５を装着する外部
リードの先端面１２ｃと封止面１４ｃとが段差な
く形成されることにより、発光素子１５の位置を
球面の中心Ａ点に近づけることができる。その結
果、樹脂封止体のレンズ効果が損なわれず、装置
の照明度を向上させることができ指向特性上好ま
しい効果が得られる。 Furthermore, when the resin sealing body 17 made of transparent or opaque epoxy resin is sealed in a spherical crown shape, the center A of the spherical surface is often located below the semiconductor light emitting element 15 . By forming the end surface 12c of the external lead to which the light emitting element 15 is attached and the sealing surface 14c without any difference in level, the position of the light emitting element 15 can be brought closer to point A, the center of the spherical surface. As a result, the lens effect of the resin sealing body is not impaired, the illumination intensity of the device can be improved, and favorable effects in terms of directivity characteristics can be obtained.
次に本発明の半導体発光素子装置の製造方法の
一例について第５〜７図を参照して説明する。 Next, an example of the method for manufacturing the semiconductor light emitting device device of the present invention will be described with reference to FIGS. 5 to 7.
所定の肉厚を有する適宜材質の金属条から適宜
方法により第５図のリードフレームを加工する。
このリードフレームは、一点鎖線で示した中心線
で切断すれば、一対のステムを得ることができ
る。切断されたリードフレームは、夫々棒状基体
１０，１０′と、それに分岐させた多数個の支持
リード１２ａ，１２ｂ；１２′ａ，１２′ｂとから
なつている。そしてステム製造の最終工程で、中
心線に沿つて切断されたときに、切断面１２ｃ，
１２ｄ（第４図参照）が発光素子１５マウント面
及びワイヤボンデイング面、すなわち発光素子装
着面となるのである。換言すれば、このリードフ
レームは一対の支持リード１２ａ，１２ｂと支持
リード１２′ａ，１２′ｂとが、夫々の先端面を突
き合わせた形で一体に連結されたものである。 The lead frame shown in FIG. 5 is fabricated from a metal strip of a suitable material and having a predetermined wall thickness by a suitable method.
A pair of stems can be obtained by cutting this lead frame along the center line indicated by a chain line. The cut lead frames each consist of a rod-shaped base 10, 10', and a large number of support leads 12a, 12b; 12'a, 12'b branched from the rod-shaped bases 10, 10'. In the final process of manufacturing the stem, when the stem is cut along the center line, the cut surface 12c,
12d (see FIG. 4) becomes the light emitting element 15 mounting surface and wire bonding surface, that is, the light emitting element mounting surface. In other words, this lead frame is a pair of support leads 12a, 12b and support leads 12'a, 12'b, which are integrally connected with their respective end surfaces butted against each other.
次に、第６図に示す如く、突き合わされた支持
リード先端部を封入して、一対の樹脂基台１４
ａ，１４ｂ（第７図参照）を一体にした樹脂基台
１４′を成形した後、第７図に示す如く、一点鎖
線で示した中心線に沿つて切断砥石により切断し
て一対のステム１１，１１′を分離させる。この
ようにして一対のステム１１，１１′の樹脂基台
１４ａ，１４ｂの樹脂封止面１４ｃと支持リード
の先端面１２ｃ，１２ｄとは段差なく切削加工に
より露出させることができる。 Next, as shown in FIG.
After molding the resin base 14' that integrates the stems 14a and 14b (see FIG. 7), the pair of stems 11 are cut by a cutting wheel along the center line indicated by the dashed line as shown in FIG. , 11' are separated. In this way, the resin sealing surfaces 14c of the resin bases 14a, 14b of the pair of stems 11, 11' and the tip surfaces 12c, 12d of the support leads can be exposed by cutting without any level difference.
そして一体の樹脂基台１４′を成形した直後に
全体をSnめつき浴し、その時点で露出している
外部リードのめつきをすれば、樹脂基台１４′に
封入されている支持リード先端面はSnめつきに
対して保護され、Snめつき後中心線に沿つて切
断し先端面を露出させた後、その部分に別のAg
めつきを施こせばめつき処理工程が簡略化され
る。 Immediately after molding the integral resin base 14', the entire body is subjected to an Sn plating bath and the exposed external leads are plated. The surface is protected against Sn plating, and after Sn plating, it is cut along the center line to expose the tip surface, and then another Ag layer is applied to that part.
Applying plating simplifies the plating process.
切断分離させた夫々のステム１１，１１′は、
発光素子１５を装着した後、適宜粘度とした透明
又は不透明液状エポキシ樹脂上に、樹脂基台の封
止面１４ｃを接触させて引き上げ、そのままの状
態で硬化させれば、球冠状の樹脂封止体１７が形
成され、これから個々の装置を分離すれば、球面
の中心Ａ点と発光素子１５の位置と近づけ若しく
は一致させることができて、装置の照明度を向上
させることができ指向特性上好ましい半導体発光
素子装置が得られる。 The respective stems 11 and 11' that have been cut and separated are
After attaching the light emitting element 15, the sealing surface 14c of the resin base is brought into contact with a transparent or opaque liquid epoxy resin of an appropriate viscosity and pulled up, and then cured in that state to form a spherical crown-shaped resin seal. If the body 17 is formed and the individual devices are separated from this, it is possible to bring the center point A of the sphere closer to or coincide with the position of the light emitting element 15, which improves the illumination intensity of the device, which is preferable in terms of directional characteristics. A semiconductor light emitting device device is obtained.
第１図は従来の樹脂基台付リードフレーム形半
導体発光素子装置の斜視図、第２図は第１図の装
置の一部破断正面図、第３図はリードフレーム形
ステムに連続させた本発明実施例装置の斜視図、
第４図ａ及びｂはそれぞれ本発明実施例装置の一
部破断正面図及び正面図、第５〜７図は本発明装
置の一製造方法の説明図である。
１１，１１′……ステム、１０，１０′……棒状
基体、１２ａ，１２ｂ，１２′ａ，１２′ｂ……支
持リード、１２ｃ，１２ｄ……支持リード先端
面、１４，１４ａ，１４ｂ，１４′……樹脂基
台、１４ｃ……封止面、１５……発光素子、１６
……ボンデイングワイヤ、１７……樹脂封止体、
Ａ……樹脂封止体の球面の中心。
Figure 1 is a perspective view of a conventional lead frame type semiconductor light emitting device device with a resin base, Figure 2 is a partially cutaway front view of the device in Figure 1, and Figure 3 is a book connected to a lead frame type stem. A perspective view of an apparatus according to an embodiment of the invention;
FIGS. 4a and 4b are a partially cutaway front view and a front view of an apparatus according to an embodiment of the present invention, respectively, and FIGS. 5 to 7 are explanatory diagrams of one manufacturing method of the apparatus of the present invention. 11, 11'... Stem, 10, 10'... Rod-shaped base, 12a, 12b, 12'a, 12'b... Support lead, 12c, 12d... Support lead tip surface, 14, 14a, 14b, 14 '... Resin base, 14c... Sealing surface, 15... Light emitting element, 16
... bonding wire, 17 ... resin sealing body,
A...The center of the spherical surface of the resin sealing body.
Claims (1)
端部に成形するとともに封止面を切削加工して形
成した樹脂基台と、前記樹脂基台の切削加工によ
り該封止面と段差なく形成させた前記支持リード
の露出した先端面と、前記支持リードの先端面に
装着された発光素子と、該発光素子を前記樹脂基
台封止面上に封止した樹脂封止体とを具備する半
導体発光素子装置。1. A plurality of support leads, a resin base formed by molding on the tips of the support leads and cutting a sealing surface, and a resin base formed by cutting the resin base without any difference in level from the sealing surface. A semiconductor comprising: an exposed tip surface of the support lead; a light emitting element mounted on the tip surface of the support lead; and a resin sealing body in which the light emitting element is sealed on the resin base sealing surface. Light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56166378A JPS5868992A (en) | 1981-10-20 | 1981-10-20 | Semiconductor light-emitting element device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56166378A JPS5868992A (en) | 1981-10-20 | 1981-10-20 | Semiconductor light-emitting element device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5868992A JPS5868992A (en) | 1983-04-25 |
| JPS6244876B2 true JPS6244876B2 (en) | 1987-09-22 |
Family
ID=15830299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56166378A Granted JPS5868992A (en) | 1981-10-20 | 1981-10-20 | Semiconductor light-emitting element device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5868992A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6677614B1 (en) * | 1992-12-17 | 2004-01-13 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| US6808950B2 (en) | 1992-12-17 | 2004-10-26 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| US6897486B2 (en) * | 2002-12-06 | 2005-05-24 | Ban P. Loh | LED package die having a small footprint |
| CN102971874A (en) * | 2011-06-07 | 2013-03-13 | 松下电器产业株式会社 | Optical semiconductor package and method for manufacturing same |
-
1981
- 1981-10-20 JP JP56166378A patent/JPS5868992A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5868992A (en) | 1983-04-25 |
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