JPS637029B2 - - Google Patents
Info
- Publication number
- JPS637029B2 JPS637029B2 JP57153687A JP15368782A JPS637029B2 JP S637029 B2 JPS637029 B2 JP S637029B2 JP 57153687 A JP57153687 A JP 57153687A JP 15368782 A JP15368782 A JP 15368782A JP S637029 B2 JPS637029 B2 JP S637029B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- glass
- diode
- diameter part
- large diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000465 moulding Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 15
- 238000007789 sealing Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000005394 sealing glass Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Description
【発明の詳細な説明】
＜産業上の利用分野＞
この発明はDHD型ガラス封止ダイオード電極
に係り、詳しくのべると、リード線を一定長に切
断後、小径部と大径部を有する電極を釘打ち加工
または成形加工して得られるリードレスダイオー
ド電極において、小径部と大径部との釘打ち加工
または成形加工の際に該小径部と大径部が隣接す
る円周面の離散した位置にそれぞれ独立した小突
起部を２ケ所以上形成させることにより、ガラス
封止後のガラスクラツク発生を防止したダイオー
ド電極部品に関するものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a DHD type glass-sealed diode electrode. Specifically, after cutting a lead wire to a certain length, an electrode having a small diameter portion and a large diameter portion is formed. In a leadless diode electrode obtained by nailing or molding, discrete positions on the circumferential surface where the small diameter part and large diameter part are adjacent when the small diameter part and the large diameter part are nailed or molded. The present invention relates to a diode electrode component in which glass cracks are prevented from occurring after glass sealing by forming two or more independent small protrusions in the glass.
＜従来の技術＞
現在市販されているダイオード電極の殆んど
は、第１図に示すように両端部にリード線１を具
備した電極２間に半導体素子３を装着し、電極２
の周囲を封止ガラス４にて封止したDHD型ガラ
ス封止ダイオード電極であり、これをプリント基
板等に装着する際には、プリント基板の装着孔に
細長いリード線１を挿入して用いるほか、第２図
のようなリード線を有しない、プリント基板への
装着容易なDHD型ガラス封止リードレスダイオ
ードが考案され、その需要が次第に急増しつつあ
る。<Prior art> Most of the diode electrodes currently on the market are made by mounting a semiconductor element 3 between electrodes 2 having lead wires 1 at both ends, as shown in FIG.
This is a DHD-type glass-sealed diode electrode whose periphery is sealed with sealing glass 4. When mounting this on a printed circuit board, etc., insert the elongated lead wire 1 into the mounting hole of the printed circuit board. A DHD type glass-sealed leadless diode, which does not have lead wires as shown in Fig. 2 and can be easily mounted on a printed circuit board, has been devised, and the demand for it is rapidly increasing.
そしてこのようなリードレスダイオードの電極
２には銅層６を被覆した心線５（例えばFe−Ni
線）の表面に亜酸化銅（Cu2O）層７を施したジ
ユメツト線（第３図）が使用され、これを一定長
に切断し、釘打ち加工を施して第４図に示すよう
な小径部８と大径部９からなる電極２を使用して
いる。 The electrode 2 of such a leadless diode is made of a core wire 5 (for example, Fe-Ni) coated with a copper layer 6.
A composite wire (Fig. 3) with a cuprous oxide (Cu 2 O) layer 7 applied to the surface of the wire (Fig. An electrode 2 consisting of a small diameter part 8 and a large diameter part 9 is used.
そしてこのような形状の電極２の中央部に第２
図のようにシリコン等の半導体素子３を装着し、
電極２の周囲が封止ガラス４で封止することによ
つてダイオードを得ている。 Then, a second electrode is placed in the center of the electrode 2 having such a shape.
As shown in the figure, attach a semiconductor element 3 such as silicon,
A diode is obtained by sealing the periphery of the electrode 2 with a sealing glass 4.
＜発明が解決しようとする問題点＞
ところが、この方式のガラス封止では、大径部
９の側面と封止ガラスが第２図の１０で示すよう
に直接接着し、釘打ち時の変形の際に銅被覆層６
と心線５の割合が小径部８の割合より小さくなつ
たりするため、ガラスとの膨脹係数に差が発生し
たり、心線５のFe−Ni合金が強加工により膨脹
係数が小さくなつたりするため、ガラス封止後特
に半田付時にガラスクラツクが発生することが多
く、これがリーク不良につながり、ダイオードの
信頼性を大きく低下させるという欠点があつた。<Problems to be Solved by the Invention> However, in this method of glass sealing, the side surface of the large diameter portion 9 and the sealing glass are directly bonded as shown at 10 in FIG. 2, which prevents deformation during nailing. Copper coating layer 6
Since the ratio of the core wire 5 is smaller than the ratio of the small diameter portion 8, a difference occurs in the coefficient of expansion with glass, and the Fe-Ni alloy of the core wire 5 is subjected to heavy processing, resulting in a decrease in the coefficient of expansion. As a result, glass cracks often occur after glass sealing, particularly during soldering, which leads to leakage defects and greatly reduces the reliability of the diode.
＜問題点を解決するための手段＞
この発明は、上記のガラス封止ダイオードにお
けるガラスクラツク発生の欠点を改善すべく検討
の結果なされたものであり、大径部と小径部が隣
接する円周面の離散した位置にそれぞれ独立した
小突起部を２ケ所以上形成させることでガラス側
面が全面変形加工を受けた大径部に直接接しない
ようにして膨脹係数の差により発生するガラスク
ラツクを完全に防止したことを特徴とするもので
ある。<Means for Solving the Problems> The present invention was made as a result of studies to improve the drawback of glass cracks occurring in the glass-sealed diode described above. By forming two or more independent small protrusions at discrete locations, the side surface of the glass does not come into direct contact with the large-diameter portion that has been fully deformed, completely preventing glass cracks caused by differences in expansion coefficients. It is characterized by the fact that
＜実施例＞
以下、この発明の実施例を第５図について説明
する。<Example> Hereinafter, an example of the present invention will be described with reference to FIG.
釘打ち用ジユメツト線として0.6〜1.5mmφの素
線を２〜３mm長さに切断したのち、釘打ち加工に
おいて大径部と小径部が隣接する円周面の離散し
た位置にそれぞれ独立した小突起部１２を形成さ
せて第５図のような電極１３を作成した。この電
極１３を用いて第６図に示すようなリードレス
DHD型ダイオードをガラス封止４にて作成する
ならば、ガラス４は電極１３の小径部８と大径部
９が隣接する円周面に形成した２ケ所以上の小突
起部１２によつて大径部９の側面１４に直接接す
ることがなくなるため、ガラスと電極の膨脹の差
により発生するガラスクラツクを改良することが
できるのである。 After cutting a wire with a diameter of 0.6 to 1.5 mm to a length of 2 to 3 mm as a nailing wire, the large diameter part and the small diameter part are formed into independent small protrusions at discrete positions on the adjacent circumferential surface during the nailing process. The electrode 13 as shown in FIG. 5 was created by forming the portion 12. Using this electrode 13, a leadless device as shown in FIG.
If a DHD type diode is made with a glass seal 4, the glass 4 is enlarged by two or more small protrusions 12 formed on the circumferential surface where the small diameter part 8 and the large diameter part 9 of the electrode 13 are adjacent. Since there is no direct contact with the side surface 14 of the diameter portion 9, it is possible to prevent glass cracks caused by the difference in expansion between the glass and the electrode.
この時小径部８からの長さｄは常に大径部９か
らの長さＤよりＤ＞ｄであり、かつｄ＜Ｄ／２以
下にする方がよい。ｄ＞Ｄ／２とすると、小突起
部１２の側面の影響がてでガラスクラツクを発生
する場合があり好ましくない。 At this time, it is preferable that the length d from the small diameter portion 8 is always greater than the length D from the large diameter portion 9 so that D>d, and d<D/2 or less. If d>D/2, glass cracks may occur due to the influence of the side surfaces of the small projections 12, which is not preferable.
従来の電極の場合のクラツク発生率は0.1〜10
％もあつたのにｄ＝Ｄ／４とした電極の場合には
殆んどクラツクは認められなかつた。 Cracking rate for conventional electrodes is 0.1-10
%, but in the case of the electrode with d=D/4, almost no cracks were observed.
またこの発明のダイオード電極部品は、リード
レス電極として利点のあるプリント基板への装着
の容易なことは勿論である。 Furthermore, the diode electrode component of the present invention is of course easy to attach to a printed circuit board, which has the advantage of being a leadless electrode.
第１図はリード線つきDHD型ダイオードの断
面図、第２図はリードレスDHD型ダイオードの
断面図、第３図はジユメツト線の断面図、第４図
は従来のリードレスダイオード電極の斜視図、第
５図はこの発明のダイオード電極の一実施例を示
す斜視図、第６図はこの発明で得た電極を用いた
リードレスDHD型ダイオードの断面図である。
８……小径部、９……大径部、１２……小突起
部、１３……電極。
Figure 1 is a cross-sectional view of a DHD diode with a lead wire, Figure 2 is a cross-sectional view of a leadless DHD diode, Figure 3 is a cross-sectional view of a composite wire, and Figure 4 is a perspective view of a conventional leadless diode electrode. 5 is a perspective view showing an embodiment of the diode electrode of the present invention, and FIG. 6 is a sectional view of a leadless DHD type diode using the electrode obtained by the present invention. 8... Small diameter part, 9... Large diameter part, 12... Small protrusion, 13... Electrode.
Claims (1)
たは成形加工して得られるリードレスダイオード
電極において、小径部と大径部が隣接する円周面
の離散した位置に２ケ所以上の小突起部を形成さ
せたことを特徴とするダイオード電極部品。1. In a leadless diode electrode obtained by nailing or molding an electrode having a small diameter part and a large diameter part, two or more small protrusions are formed at discrete positions on the circumferential surface where the small diameter part and the large diameter part are adjacent. A diode electrode component characterized by having a portion formed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15368782A JPS5943558A (en) | 1982-09-02 | 1982-09-02 | Diode electrode part |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15368782A JPS5943558A (en) | 1982-09-02 | 1982-09-02 | Diode electrode part |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5943558A JPS5943558A (en) | 1984-03-10 |
| JPS637029B2 true JPS637029B2 (en) | 1988-02-15 |
Family
ID=15567947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15368782A Granted JPS5943558A (en) | 1982-09-02 | 1982-09-02 | Diode electrode part |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5943558A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6071148U (en) * | 1983-10-24 | 1985-05-20 | ローム株式会社 | diode |
| JPS61129849A (en) * | 1984-11-28 | 1986-06-17 | Toshiba Corp | Leadless semiconductor device |
| JPS61182040U (en) * | 1985-04-30 | 1986-11-13 | ||
| JPS6355549U (en) * | 1986-09-29 | 1988-04-14 | ||
| US5248902A (en) * | 1991-08-30 | 1993-09-28 | General Instrument Corporation | Surface mounting diode |
| SG107595A1 (en) | 2002-06-18 | 2004-12-29 | Micron Technology Inc | Semiconductor devices and semiconductor device components with peripherally located, castellated contacts, assembles and packages including such semiconductor devices or packages and associated methods |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5828859A (en) * | 1981-08-13 | 1983-02-19 | Matsushita Electronics Corp | Leadless glass sealing diode |
| JPS5869953A (en) * | 1981-10-21 | 1983-04-26 | 株式会社 平井技研 | Roof member |
| JPS58168269A (en) * | 1982-03-29 | 1983-10-04 | Nec Home Electronics Ltd | Leadless diode |
-
1982
- 1982-09-02 JP JP15368782A patent/JPS5943558A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5828859A (en) * | 1981-08-13 | 1983-02-19 | Matsushita Electronics Corp | Leadless glass sealing diode |
| JPS5869953A (en) * | 1981-10-21 | 1983-04-26 | 株式会社 平井技研 | Roof member |
| JPS58168269A (en) * | 1982-03-29 | 1983-10-04 | Nec Home Electronics Ltd | Leadless diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5943558A (en) | 1984-03-10 |
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