JPS60198759A - Leadless semiconductor element - Google Patents

Leadless semiconductor element

Info

Publication number
JPS60198759A
JPS60198759A JP5362784A JP5362784A JPS60198759A JP S60198759 A JPS60198759 A JP S60198759A JP 5362784 A JP5362784 A JP 5362784A JP 5362784 A JP5362784 A JP 5362784A JP S60198759 A JPS60198759 A JP S60198759A
Authority
JP
Japan
Prior art keywords
metal electrode
external metal
glass tube
diameter part
small diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5362784A
Other languages
Japanese (ja)
Inventor
Kaoru Nakagawa
中川 薫
Yoshio Yamamoto
山本 善生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5362784A priority Critical patent/JPS60198759A/en
Publication of JPS60198759A publication Critical patent/JPS60198759A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/06Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

PURPOSE:To prevent contact failure by firm fixing by a method wherein electrodes on both surfaces of a semiconductor element contained in a glass tube are pressed at both ends of two external metal electrode columns, the other end of which column is then provided with a recess. CONSTITUTION:One surface of a diode pellet 1 forms a semi-spherical metallic electrode, and the opposite surface is a planar electrode. The glass tube 3 constitutes part of the casing and contains a diode pellet 1. The external metal electrode column 2 consists of the large diameter part and the small diameter part, and is made of a Dumet wire. The small diameter parts of the two pieces of external metal electrode columns 2 are inserted through both end apertures of the glass tube 3. The electrodes of both surfaces of the diode pellet are pressed at both surfaces of the small diameter part and sealed hermetically. The shape of the end surface 5 of the large diameter part of the external metal electrode column 2 is recess-formed, and the area of solder 4 wetting thus becomes wider.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は半導体素子の外囲器に関するもので、特に小形
外囲器を有するリードレス半導体素子に使用せられる。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an envelope for a semiconductor device, and is particularly used for a leadless semiconductor device having a small envelope.

[発明の技術的背景] 民生用あるいは産業用など各種機器の電子化により、プ
リント基板への電子部品の実装作業が増加している。 
それにともない半導体ダイオードの使用量も増加し、よ
り小形化されている。 他方これら部品のプリント基板
への実装作業は自動機械化に移行している。
[Technical Background of the Invention] With the electronicization of various types of consumer and industrial equipment, the work of mounting electronic components onto printed circuit boards is increasing.
Along with this, the amount of semiconductor diodes used has also increased and they have become smaller. On the other hand, the work of mounting these parts onto printed circuit boards is moving to automatic mechanization.

リードレスダイオードはこれら要求に適合した部品とし
て多量に生産されるようになっている。
Leadless diodes are being produced in large quantities as components that meet these requirements.

従来の一般のリードレスダイオードの一例について第1
図にもとづき説明する。 1はダイオードベレットでガ
ラス管3に収納される。 ダイオードベレットの両面の
電極は、2個の小径部と大径部を有する外部金属電極柱
2の小径部端面で挾まれ圧着される。 電極柱2の小径
部外周壁はガラス管3の内周壁に気密に封着させである
。 外部金B電極柱2の大径部端面5は平面である。・
[背景技術の問題点] リードレスダイオードは例えば自動機械によりプリント
基板の配線ランド間にあらかじめ接着剤で仮固定され、
フロー“式あるいはディップ式等のはんだ付は方法によ
り基板上の銅箔等にはんだ付けされる。 従来技術によ
るリードレスダイオードをプリント基板にはんだ付けす
るとき生じやすい接触不十分の一例を第2図に示す。 
従来技術の外部金属電極柱2の端面5は平坦であり、基
板上に設けられたランド部に付着したはんだ4との濡れ
面積が十分でない。 特に基板上のランド間に素子を仮
固定するとき何等かの原因でずれると、はんだ4の位置
と素子の外部金属電極柱2の位置にずれが生じ接触不良
が生じ易い。 またその程度がひどくなると何らかの力
で脱落(スッポ抜は等)することもある。 最近の電子
機器の機能の高度化、小形化によりプリント基板の実装
部品の高密度化がすすめられるとともに実装作業の高信
頼度化が強く要求されている。 リードレスダイオード
のより信頼性の高い装着は重要な問題である。
First example of conventional general leadless diode
This will be explained based on the diagram. A diode pellet 1 is housed in a glass tube 3. The electrodes on both sides of the diode pellet are sandwiched and crimped by the end face of the small diameter part of an external metal electrode column 2 having two small diameter parts and a large diameter part. The outer circumferential wall of the small diameter portion of the electrode column 2 is hermetically sealed to the inner circumferential wall of the glass tube 3. The large diameter end face 5 of the external gold B electrode pillar 2 is a flat surface.・
[Problems with the background technology] A leadless diode is temporarily fixed between wiring lands of a printed circuit board using an adhesive, for example, by an automatic machine.
Flow type or dip type soldering is used to solder to copper foil, etc. on a board. Figure 2 shows an example of insufficient contact that tends to occur when a conventional leadless diode is soldered to a printed circuit board. Shown below.
The end surface 5 of the conventional external metal electrode column 2 is flat and does not have a sufficient wetted area with the solder 4 attached to the land portion provided on the substrate. In particular, if the element is deviated for some reason when temporarily fixing the element between lands on the substrate, the position of the solder 4 and the position of the external metal electrode pillar 2 of the element are likely to be deviated, resulting in poor contact. Also, if the situation becomes severe, it may fall off due to some kind of force (such as removing a soft-shelled turtle). BACKGROUND OF THE INVENTION In recent years, as the functions of electronic devices have become more sophisticated and smaller, the density of components mounted on printed circuit boards has increased, and there has been a strong demand for higher reliability in mounting operations. More reliable mounting of leadless diodes is an important issue.

[発明の目的] 本発明は、従来のリードレス半導体素子特にリードレス
ダイオード外囲器のプリント基板等に装着する部分の形
状を変更し、電気的機械的に信頼性の高い装着のできる
リードレス半導体素子を提供することを目的とする。
[Object of the Invention] The present invention is a leadless semiconductor element that can be mounted with high electrical and mechanical reliability by changing the shape of the part of the conventional leadless semiconductor device, particularly the part of the leadless diode envelope that is mounted on a printed circuit board, etc. The purpose is to provide semiconductor devices.

[発明の概要] リードレス半導体素子のプリント基板への装着は該素子
外囲器の両端の外部金属柱をプリント基板上の所定の銅
箔バンプにそれぞれはんだ付けしておこなわれる。 は
んだ付けを確実におこなう該素子の外部金属柱端部の形
状としては、はんだの濡れる面積が広く、はんだのまわ
り込みが良くかつ機械的強度を増すために該金属柱端部
またはその一部をはんだによって挾み込む形と覆ること
が好ましい。
[Summary of the Invention] A leadless semiconductor element is mounted on a printed circuit board by soldering external metal pillars at both ends of the element envelope to predetermined copper foil bumps on the printed circuit board, respectively. The shape of the external metal column end of the element to ensure soldering is such that the area where the solder can get wet is large, the solder wraps around well, and the metal column end or a part thereof is shaped to ensure soldering. It is preferable to cover it with solder.

すなわち本発明は、ガラス管内に収納した半導体素子の
両面の電極を、該ガラス管の両端開口部より挿入する2
個の外部金属電極柱の端面で圧着し、該ガラス管周壁の
端部を該外部金属電極柱の周壁に気密封着したリードレ
ス半導体素子において、該外部金属電極柱の他の端面に
凹部を設けた゛ことを特徴とするり一ドレス半導体素子
である。
That is, the present invention provides a method for inserting electrodes on both sides of a semiconductor element housed in a glass tube through openings at both ends of the glass tube.
In a leadless semiconductor device in which the end face of the external metal electrode pillar is crimped and the end of the peripheral wall of the glass tube is hermetically sealed to the peripheral wall of the external metal electrode pillar, a recess is formed in the other end face of the external metal electrode pillar. This is a single-dress semiconductor device characterized by the following features:

また生産性あるいは装着等を考慮した場合、本発明の望
ましい実施態様は外部金属電極柱が小径部と大径部とよ
りなり、該ガラス管周壁の端部を該小径部の周壁に気密
封着した特許請求の範囲第1項記載のリードレス半導体
素子である。
In addition, in consideration of productivity, installation, etc., a desirable embodiment of the present invention is that the external metal electrode pillar consists of a small diameter part and a large diameter part, and the end of the peripheral wall of the glass tube is hermetically sealed to the peripheral wall of the small diameter part. A leadless semiconductor device according to claim 1.

また本発明は、サーミスタ、バリスタ等の半導。The present invention also relates to semiconductors such as thermistors and varistors.

体素子に適用することは勿論可能であるが、現在適用さ
れる半導体素子の大部分は半導体ダイオードである。
Although it is of course possible to apply the present invention to physical elements, most of the semiconductor elements currently applied are semiconductor diodes.

[発明の実施例] 実施例にもとづき本発明を更に詳細に°説明する。[Embodiments of the invention] The present invention will be explained in more detail based on examples.

第3図は本発明の一例を示すリードレスダイオードの断
面図である。 なお以下向−−号は同一部分をあられす
FIG. 3 is a sectional view of a leadless diode showing an example of the present invention. Note that the numbers below refer to the same parts.

1はダイオードベレットでその1つの面は半球状金属電
極(例えば正電極)を形成し、ペレットの他の反対面は
平面電極(例えば負電極)となっている。 ガラス管3
は外囲器の一部を構成し、その内部にダイオードベレッ
ト1を収納する。
1 is a diode pellet, one surface of which forms a hemispherical metal electrode (for example, a positive electrode), and the other opposite surface of the pellet a flat electrode (for example, a negative electrode). glass tube 3
constitutes a part of the envelope, and the diode pellet 1 is housed inside the envelope.

外部金属電極柱2は大径部と小径部とよりなり、その材
質はガラス管3のガラスとよくなじむジュメット線([
)umet wire 、心材FeNi合金、外側無酸
素銅)である。 2個の外部金属電極柱2の小径部はガ
ラス管3の両端開口部より挿入される。 小径部の端面
でダイオードペレットの両面の電極を圧着し、圧着した
状態でガラス管3の内周壁を小径部外周壁に気密に封着
する。
The external metal electrode column 2 consists of a large diameter part and a small diameter part, and its material is Dumet wire ([
) umet wire, core material FeNi alloy, outer oxygen-free copper). The small diameter portions of the two external metal electrode columns 2 are inserted through openings at both ends of the glass tube 3. The electrodes on both sides of the diode pellet are crimped on the end face of the small diameter portion, and in the crimped state, the inner circumferential wall of the glass tube 3 is hermetically sealed to the outer circumferential wall of the small diameter portion.

外部金属電極柱2の大径部の端面5の形状は従来の平坦
な端面でなく、本発明においては第3図に示すように凹
形となっている。 凹部の深さdは例えば大径部の直径
りに対し約D/3ないしD15である。 なお外部金属
電極柱2の大径部端面を凹形とするのは、電極柱2の機
械加工の際いわゆるヘッディングといわれるプレスのつ
ぶし技術により簡単に製作することができて、はとんど
該電極柱部品の価格上昇とはならない。 本実施例では
外部金属電極柱は大径部と小径部とから成っているが、
その他の例えば一様な外径の電極柱であってもよい。 
またその材質もジュメット線に限定されない、例えばコ
バール合金等ガラスと気密封着可能なものならば差支え
ない。
The shape of the end face 5 of the large diameter portion of the external metal electrode column 2 is not the conventional flat end face, but is concave in the present invention as shown in FIG. The depth d of the recess is, for example, approximately D/3 to D15 relative to the diameter of the large diameter portion. It should be noted that making the large diameter end face of the external metal electrode column 2 concave can be easily manufactured using a press crushing technique called "heading" when machining the electrode column 2, and is rarely applicable. This will not result in an increase in the price of electrode column parts. In this example, the external metal electrode pillar consists of a large diameter part and a small diameter part.
Other electrode columns, for example, having a uniform outer diameter may also be used.
Furthermore, the material is not limited to Dumet wire, but may be any material that can be hermetically sealed with glass, such as Kovar alloy.

[発明の効果] 第4図は本発明によるリードレスダイオードをプリント
基板にはんだ付けした状態の断面図である。 外部金属
電極柱2の端面5は同図に示すように凹形となっていて
従来の平坦な端面に比しはんだの濡れる面積が広くなり
、またはんだのまわり込みが良く、はんだの盛り上がり
形成が容易となり、はんだとの接着不良の機会が大幅に
減少される。 また電極柱2の凹型端面5の縁部6はは
んだの盛り上げにより挾み込まれた形となり、機械的に
従来の平坦な端面のものに比しはるかに強く固着され、
スッポ抜けは勿論のことガタ等の接触不良は防止される
。 本発明によるリードレス載すれば従来品に比し電気
的にも機械的にも高い信頼性を持つ接着を実現すること
ができる。
[Effects of the Invention] FIG. 4 is a sectional view of a leadless diode according to the present invention soldered to a printed circuit board. As shown in the figure, the end surface 5 of the external metal electrode column 2 is concave, and compared to a conventional flat end surface, the solder wetted area is wider, the solder wraps around better, and the formation of solder bulges is prevented. This greatly reduces the chance of poor adhesion with solder. In addition, the edge 6 of the concave end surface 5 of the electrode column 2 has a sandwiched shape due to the solder buildup, and is mechanically fixed much more strongly than the conventional flat end surface.
Not only slip-off but also poor contact such as looseness is prevented. By using leadless mounting according to the present invention, it is possible to realize bonding that has higher electrical and mechanical reliability than conventional products.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来技術によるリードレスダイオードの断面図
、第2図は上記ダイオードをプリント基板にはんだ付け
した状態を示す断面図、第3図は本発明による°リード
レスダイオードの断面図、第4図は本発明による上記ダ
イオードをプリント基板にはんだ付けした状態を示す断
面図である。 1・・・半導体素子(ダイオードペレット)、 2・・
・外部金属電極柱、 3・・・ガラス管、 4・・・は
んだ、 5・・・外部金属電極柱の端面。 特許出願人 東京芝浦電気株式会社 第1図 第2図 4 3 4 第3図。 第4図
FIG. 1 is a sectional view of a leadless diode according to the prior art, FIG. 2 is a sectional view showing the diode soldered to a printed circuit board, FIG. 3 is a sectional view of a leadless diode according to the present invention, and FIG. The figure is a sectional view showing the diode according to the present invention soldered to a printed circuit board. 1... Semiconductor element (diode pellet), 2...
- External metal electrode pillar, 3...Glass tube, 4...Solder, 5...End face of external metal electrode pillar. Patent applicant Tokyo Shibaura Electric Co., Ltd. Figure 1 Figure 2 4 3 4 Figure 3. Figure 4

Claims (1)

【特許請求の範囲】 1 ガラス管内に収納した半導体素子の両面の電極を、
該ガラス管の両端開口部より挿入する2個の外部金属電
極柱の端面で圧着し、該ガラス管周壁の端部を該外部金
属電極柱の周壁に気密封着したリードレス半導体素子に
おいて、該外部金属電極柱の他の端面に凹部を段けたこ
とを特徴とするリードレス半導体素子。 2 外部金属電極柱が小径部と大径部とよりなり、該ガ
ラス管周壁の端部を該小径部の周壁に気密封着した特許
請求の範囲第1項記載のリードレス半導体素子。 3 半導体素子が半導体ダイオードでとる特許請求の範
囲第1項記載のリードレス半導体素子。
[Claims] 1. Electrodes on both sides of a semiconductor element housed in a glass tube,
In a leadless semiconductor device, the end surfaces of two external metal electrode columns inserted through openings at both ends of the glass tube are crimped together, and the ends of the peripheral wall of the glass tube are hermetically sealed to the peripheral wall of the external metal electrode pillar. A leadless semiconductor device characterized in that a recess is stepped on the other end face of an external metal electrode pillar. 2. The leadless semiconductor device according to claim 1, wherein the external metal electrode pillar comprises a small diameter part and a large diameter part, and the end of the peripheral wall of the glass tube is hermetically sealed to the peripheral wall of the small diameter part. 3. The leadless semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor diode.
JP5362784A 1984-03-22 1984-03-22 Leadless semiconductor element Pending JPS60198759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5362784A JPS60198759A (en) 1984-03-22 1984-03-22 Leadless semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5362784A JPS60198759A (en) 1984-03-22 1984-03-22 Leadless semiconductor element

Publications (1)

Publication Number Publication Date
JPS60198759A true JPS60198759A (en) 1985-10-08

Family

ID=12948143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5362784A Pending JPS60198759A (en) 1984-03-22 1984-03-22 Leadless semiconductor element

Country Status (1)

Country Link
JP (1) JPS60198759A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461718B1 (en) * 2002-03-18 2004-12-14 삼성전기주식회사 Chip scale package and the method of fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461718B1 (en) * 2002-03-18 2004-12-14 삼성전기주식회사 Chip scale package and the method of fabricating the same

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